SG11202103988SA - Crystal growth apparatus - Google Patents
Crystal growth apparatusInfo
- Publication number
- SG11202103988SA SG11202103988SA SG11202103988SA SG11202103988SA SG11202103988SA SG 11202103988S A SG11202103988S A SG 11202103988SA SG 11202103988S A SG11202103988S A SG 11202103988SA SG 11202103988S A SG11202103988S A SG 11202103988SA SG 11202103988S A SG11202103988S A SG 11202103988SA
- Authority
- SG
- Singapore
- Prior art keywords
- crystal growth
- growth apparatus
- crystal
- growth
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018129492.1A DE102018129492B4 (en) | 2018-11-22 | 2018-11-22 | Apparatus and method for growing crystals |
PCT/EP2019/081770 WO2020104444A1 (en) | 2018-11-22 | 2019-11-19 | Crystal growth apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202103988SA true SG11202103988SA (en) | 2021-05-28 |
Family
ID=68654456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202103988SA SG11202103988SA (en) | 2018-11-22 | 2019-11-19 | Crystal growth apparatus |
Country Status (8)
Country | Link |
---|---|
US (1) | US20220010457A1 (en) |
EP (1) | EP3884086A1 (en) |
JP (1) | JP2022507882A (en) |
KR (1) | KR20210093249A (en) |
CN (1) | CN113166969A (en) |
DE (1) | DE102018129492B4 (en) |
SG (1) | SG11202103988SA (en) |
WO (1) | WO2020104444A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT523729B1 (en) | 2020-09-28 | 2021-11-15 | Ebner Ind Ofenbau | Apparatus for growing crystals with a thermal cladding unit |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4556436A (en) * | 1984-08-22 | 1985-12-03 | The United States Of America As Represented By The Secretary Of The Navy | Method of preparing single crystalline cubic silicon carbide layers |
JPH0788274B2 (en) * | 1985-09-18 | 1995-09-27 | 三洋電機株式会社 | Method for growing SiC single crystal |
US4869776A (en) * | 1986-07-29 | 1989-09-26 | Sharp Kabushiki Kaisha | Method for the growth of a compound semiconductor crystal |
SE9502288D0 (en) * | 1995-06-26 | 1995-06-26 | Abb Research Ltd | A device and a method for epitaxially growing objects by CVD |
JP3491402B2 (en) * | 1995-08-07 | 2004-01-26 | 株式会社デンソー | Single crystal manufacturing method and single crystal manufacturing apparatus |
US6056820A (en) * | 1998-07-10 | 2000-05-02 | Northrop Grumman Corporation | Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
JP3762559B2 (en) * | 1999-01-28 | 2006-04-05 | 株式会社シクスオン | Crucible, crystal growth apparatus, and crystal growth method |
JP4597285B2 (en) * | 1999-04-28 | 2010-12-15 | 昭和電工株式会社 | Method and apparatus for producing silicon carbide single crystal |
US6406539B1 (en) * | 1999-04-28 | 2002-06-18 | Showa Denko K.K, | Process for producing silicon carbide single crystal and production apparatus therefor |
US6451112B1 (en) * | 1999-10-15 | 2002-09-17 | Denso Corporation | Method and apparatus for fabricating high quality single crystal |
US8163086B2 (en) * | 2007-08-29 | 2012-04-24 | Cree, Inc. | Halogen assisted physical vapor transport method for silicon carbide growth |
JP5262203B2 (en) * | 2008-03-11 | 2013-08-14 | 住友電気工業株式会社 | Compound semiconductor single crystal manufacturing apparatus and manufacturing method |
JP5271601B2 (en) * | 2008-05-16 | 2013-08-21 | 株式会社ブリヂストン | Single crystal manufacturing apparatus and manufacturing method |
DE102008063129B4 (en) * | 2008-12-24 | 2013-05-16 | Sicrystal Ag | Production method for a co-doped SiC bulk single crystal and high-resistance SiC substrate |
US8553333B2 (en) * | 2009-01-23 | 2013-10-08 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Nanostructured anti-reflective coatings for substrates |
CN201779995U (en) * | 2010-05-31 | 2011-03-30 | 比亚迪股份有限公司 | Crucible for reducing gas atmosphere balance |
CN102691100B (en) * | 2011-03-22 | 2015-01-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process chamber device and epitaxial equipment with it |
WO2012144872A2 (en) * | 2011-04-21 | 2012-10-26 | Lg Innotek Co., Ltd. | Apparatus and method for fabricating ingot |
JP5556761B2 (en) * | 2011-07-28 | 2014-07-23 | 株式会社デンソー | Silicon carbide single crystal manufacturing equipment |
KR20130074712A (en) * | 2011-12-26 | 2013-07-04 | 엘지이노텍 주식회사 | Apparatus for fabricating ingot |
US8747982B2 (en) * | 2011-12-28 | 2014-06-10 | Sicrystal Aktiengesellschaft | Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course |
TWI516648B (en) * | 2014-06-16 | 2016-01-11 | 台聚光電股份有限公司 | Apparatus for producing silicon carbide crystals with multi-seeds |
DE112016004430T5 (en) * | 2015-09-29 | 2018-07-05 | Sumitomo Electric Industries, Ltd. | A method of manufacturing a silicon carbide epitaxial substrate, a method of manufacturing a silicon carbide semiconductor device, and an apparatus for producing a silicon carbide epitaxial substrate |
CN206244927U (en) * | 2016-12-09 | 2017-06-13 | 河北同光晶体有限公司 | A kind of device for growing different crystal structure single-crystal silicon carbide |
CN106480503B (en) * | 2016-12-09 | 2018-11-20 | 河北同光晶体有限公司 | A kind of growing method of granular carbonization silicon single crystal |
-
2018
- 2018-11-22 DE DE102018129492.1A patent/DE102018129492B4/en active Active
-
2019
- 2019-11-19 EP EP19808731.4A patent/EP3884086A1/en active Pending
- 2019-11-19 US US17/296,217 patent/US20220010457A1/en active Pending
- 2019-11-19 SG SG11202103988SA patent/SG11202103988SA/en unknown
- 2019-11-19 WO PCT/EP2019/081770 patent/WO2020104444A1/en unknown
- 2019-11-19 CN CN201980076758.4A patent/CN113166969A/en active Pending
- 2019-11-19 KR KR1020217014208A patent/KR20210093249A/en not_active Application Discontinuation
- 2019-11-19 JP JP2021528851A patent/JP2022507882A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20210093249A (en) | 2021-07-27 |
DE102018129492B4 (en) | 2022-04-28 |
US20220010457A1 (en) | 2022-01-13 |
DE102018129492A1 (en) | 2020-05-28 |
CN113166969A (en) | 2021-07-23 |
WO2020104444A1 (en) | 2020-05-28 |
EP3884086A1 (en) | 2021-09-29 |
JP2022507882A (en) | 2022-01-18 |
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