SG11202005030XA - Catalyst influenced pattern transfer technology - Google Patents

Catalyst influenced pattern transfer technology

Info

Publication number
SG11202005030XA
SG11202005030XA SG11202005030XA SG11202005030XA SG11202005030XA SG 11202005030X A SG11202005030X A SG 11202005030XA SG 11202005030X A SG11202005030X A SG 11202005030XA SG 11202005030X A SG11202005030X A SG 11202005030XA SG 11202005030X A SG11202005030X A SG 11202005030XA
Authority
SG
Singapore
Prior art keywords
pattern transfer
transfer technology
catalyst influenced
influenced pattern
catalyst
Prior art date
Application number
SG11202005030XA
Other languages
English (en)
Inventor
Sidlgata V Sreenivasan
Akhila Mallavarapu
Shrawan Singhal
Lawrence R Dunn
Brian Gawlik
Original Assignee
Univ Texas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Texas filed Critical Univ Texas
Publication of SG11202005030XA publication Critical patent/SG11202005030XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
    • H01L29/7854—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection with rounded corners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Drying Of Semiconductors (AREA)
SG11202005030XA 2017-11-28 2018-11-09 Catalyst influenced pattern transfer technology SG11202005030XA (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762591326P 2017-11-28 2017-11-28
US201862665084P 2018-05-01 2018-05-01
US201862701049P 2018-07-20 2018-07-20
US201862729361P 2018-09-10 2018-09-10
PCT/US2018/060176 WO2019108366A1 (en) 2017-11-28 2018-11-09 Catalyst influenced pattern transfer technology

Publications (1)

Publication Number Publication Date
SG11202005030XA true SG11202005030XA (en) 2020-06-29

Family

ID=66665736

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202005030XA SG11202005030XA (en) 2017-11-28 2018-11-09 Catalyst influenced pattern transfer technology

Country Status (7)

Country Link
EP (1) EP3718133A4 (zh)
JP (2) JP7328220B2 (zh)
KR (1) KR20200090237A (zh)
CN (1) CN111670493A (zh)
SG (1) SG11202005030XA (zh)
TW (1) TW201926460A (zh)
WO (1) WO2019108366A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210142118A (ko) * 2019-02-25 2021-11-24 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 이방성 화학 식각을 위한 대면적 계측 및 공정 제어
WO2020232025A2 (en) * 2019-05-13 2020-11-19 Board Of Regents, The University Of Texas System Catalyst influenced chemical etching for fabricating three-dimensional sram architectures and optical waveguides
KR102650930B1 (ko) * 2019-11-28 2024-03-22 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3차원 메모리 디바이스 및 그 제조 방법
EP3836194A1 (en) * 2019-12-13 2021-06-16 Imec VZW Metal assisted chemical etch for channel and bit-line scaling in a 3d memory device
JPWO2021153169A1 (zh) * 2020-01-27 2021-08-05
WO2021154141A1 (en) * 2020-01-27 2021-08-05 Smena Tech Ab Patterning of multilayer transition metal dichalcogenides
US20230207328A1 (en) * 2020-04-01 2023-06-29 Lam Research Corporation Selective precision etching of semiconductor materials
US20230187213A1 (en) * 2020-05-05 2023-06-15 Board Of Regents, The University Of Texas System Nanofabrication of collapse-free high aspect ratio nanostructures
US11257758B2 (en) * 2020-06-24 2022-02-22 Taiwan Semiconductor Manufacturing Company Limited Backside connection structures for nanostructures and methods of forming the same
CN116583932A (zh) * 2020-10-29 2023-08-11 德克萨斯大学系统董事会 用于受催化剂影响的化学蚀刻的设备和工艺技术
CN112621779B (zh) * 2020-12-18 2022-04-08 南京鼓楼医院 一种近红外驱动的可视化Janus结构色软体机器人及其制备方法
GB202020822D0 (en) * 2020-12-31 2021-02-17 Spts Technologies Ltd Method and apparatus
JP2024504118A (ja) * 2021-01-21 2024-01-30 ラム リサーチ コーポレーション エッチングフロント金属触媒を用いる高アスペクト比メモリのプロファイル最適化
CN113134971B (zh) * 2021-04-26 2022-07-19 长春理工大学 仿生鲨鱼皮结构的制造系统和制造方法
CN113824826B (zh) * 2021-09-18 2023-05-30 广东阿特斯科技有限公司 一种3d打印手机背板生产工艺
EP4152394A1 (de) * 2021-09-20 2023-03-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum erzeugen von vertikalen kanalstrukturen in dreidimensional integrierten halbleiterspeichern
WO2023166608A1 (ja) * 2022-03-02 2023-09-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
CN117153785B (zh) * 2023-10-27 2024-03-01 合肥晶合集成电路股份有限公司 一种半导体结构的制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9095639B2 (en) * 2006-06-30 2015-08-04 The University Of Akron Aligned carbon nanotube-polymer materials, systems and methods
WO2010027962A2 (en) * 2008-09-04 2010-03-11 The Board Of Trustees Of The University Of Illinois Method of forming a nanoscale three-demensional pattern in a porous semiconductor
US8278191B2 (en) * 2009-03-31 2012-10-02 Georgia Tech Research Corporation Methods and systems for metal-assisted chemical etching of substrates
US8193095B2 (en) * 2010-05-28 2012-06-05 National Taiwan University Method for forming silicon trench
WO2013056186A1 (en) * 2011-10-12 2013-04-18 The Regents Of The University Of California Semiconductor processing by magnetic field guided etching
GB201122315D0 (en) * 2011-12-23 2012-02-01 Nexeon Ltd Etched silicon structures, method of forming etched silicon structures and uses thereof
GB201205178D0 (en) * 2012-03-23 2012-05-09 Nexeon Ltd Etched silicon structures, method of forming etched silicon structures and uses thereof
US8951430B2 (en) * 2012-04-18 2015-02-10 The Board Of Trustees Of The University Of Illinois Metal assisted chemical etching to produce III-V semiconductor nanostructures
US10134634B2 (en) * 2014-11-04 2018-11-20 Georgia Tech Research Corporation Metal-assisted chemical etching of a semiconductive substrate with high aspect ratio, high geometic uniformity, and controlled 3D profiles
KR101680070B1 (ko) * 2015-04-21 2016-11-30 연세대학교 산학협력단 반도체 구조 제조 방법 및 기판 식각 방법
JP6444805B2 (ja) * 2015-05-12 2018-12-26 株式会社東芝 半導体チップの製造方法
US10134599B2 (en) * 2016-02-24 2018-11-20 The Board Of Trustees Of The University Of Illinois Self-anchored catalyst metal-assisted chemical etching
CN109072451B (zh) * 2016-03-18 2021-08-03 麻省理工学院 纳米多孔半导体材料及其制造
JP2017201660A (ja) * 2016-05-04 2017-11-09 株式会社ザイキューブ 半導体基板への孔の形成方法及びそれに用いるマスク構造
JP6081647B1 (ja) * 2016-07-28 2017-02-15 株式会社東芝 エッチング方法、半導体チップの製造方法及び物品の製造方法

Also Published As

Publication number Publication date
JP2023145718A (ja) 2023-10-11
JP2021504961A (ja) 2021-02-15
CN111670493A (zh) 2020-09-15
WO2019108366A1 (en) 2019-06-06
EP3718133A4 (en) 2021-11-24
KR20200090237A (ko) 2020-07-28
JP7328220B2 (ja) 2023-08-16
TW201926460A (zh) 2019-07-01
EP3718133A1 (en) 2020-10-07

Similar Documents

Publication Publication Date Title
SG11202005030XA (en) Catalyst influenced pattern transfer technology
GB201708361D0 (en) Catalyst
GB2562681B (en) Catalyst
SG11201705507TA (en) Substrate transfer mechanisms
GB2559304B (en) Multi-channel tracking pattern
GB201603156D0 (en) Supported catalyst
PL3108743T3 (pl) Układ do przenoszenia pakietów płodów rolnych
SG11202005277RA (en) Hafnocene-titanocene catalyst system
GB201608259D0 (en) Feature transfer
GB201714234D0 (en) Catalyst
GB2569872B (en) Instance usage facilitating system
SG11202000676UA (en) Heterogeneous catalyst
PT3305692T (pt) Transferência de objetos
GB201703558D0 (en) catalysts
IL248286A0 (en) Wireless data transfer
GB201719463D0 (en) Catalyst
GB201714330D0 (en) Oligonucleotides
GB201710091D0 (en) Solvo-dynamic printing
SG11202005184XA (en) Zirconocene-titanocene catalyst system
SG11202104000XA (en) Complementary pattern station designs
GB201806687D0 (en) Catalyst
ZAA201800493S (en) Surface pattern
GB201710509D0 (en) Transfer board
GB201719202D0 (en) Printing
GB201803208D0 (en) Catalysts