SG11202104000XA - Complementary pattern station designs - Google Patents
Complementary pattern station designsInfo
- Publication number
- SG11202104000XA SG11202104000XA SG11202104000XA SG11202104000XA SG11202104000XA SG 11202104000X A SG11202104000X A SG 11202104000XA SG 11202104000X A SG11202104000X A SG 11202104000XA SG 11202104000X A SG11202104000X A SG 11202104000XA SG 11202104000X A SG11202104000X A SG 11202104000XA
- Authority
- SG
- Singapore
- Prior art keywords
- complementary pattern
- station designs
- pattern station
- designs
- complementary
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20214—Rotation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862751913P | 2018-10-29 | 2018-10-29 | |
US16/658,396 US11220747B2 (en) | 2018-10-29 | 2019-10-21 | Complementary pattern station designs |
PCT/US2019/057326 WO2020092047A1 (en) | 2018-10-29 | 2019-10-22 | Complementary pattern station designs |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202104000XA true SG11202104000XA (en) | 2021-05-28 |
Family
ID=70327960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202104000XA SG11202104000XA (en) | 2018-10-29 | 2019-10-22 | Complementary pattern station designs |
Country Status (7)
Country | Link |
---|---|
US (1) | US11220747B2 (en) |
JP (1) | JP7249407B2 (en) |
KR (1) | KR102638144B1 (en) |
CN (1) | CN113169037A (en) |
SG (1) | SG11202104000XA (en) |
TW (1) | TWI754180B (en) |
WO (1) | WO2020092047A1 (en) |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6206972B1 (en) | 1999-07-08 | 2001-03-27 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
JP2002261036A (en) * | 2001-02-28 | 2002-09-13 | Dainippon Screen Mfg Co Ltd | Heat treatment device |
US6972055B2 (en) * | 2003-03-28 | 2005-12-06 | Finens Corporation | Continuous flow deposition system |
JP3709413B1 (en) | 2003-06-25 | 2005-10-26 | 積水化学工業株式会社 | Surface treatment apparatus and method |
CN100358099C (en) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | Plasma processing device |
KR100873686B1 (en) | 2007-05-29 | 2008-12-12 | 주식회사 래디언테크 | Apparatus for plasma treatment |
US9184072B2 (en) * | 2007-07-27 | 2015-11-10 | Mattson Technology, Inc. | Advanced multi-workpiece processing chamber |
JP5315898B2 (en) * | 2008-09-30 | 2013-10-16 | 東京エレクトロン株式会社 | Deposition equipment |
JP5544697B2 (en) * | 2008-09-30 | 2014-07-09 | 東京エレクトロン株式会社 | Deposition equipment |
JP2010118541A (en) | 2008-11-13 | 2010-05-27 | Sharp Corp | Plasma processing device and method for processing plasma |
KR101046613B1 (en) | 2008-12-29 | 2011-07-06 | 주식회사 케이씨텍 | Atomic layer deposition apparatus |
US20110180233A1 (en) * | 2010-01-27 | 2011-07-28 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
KR101134277B1 (en) | 2010-10-25 | 2012-04-12 | 주식회사 케이씨텍 | Atomic layer deposition apparatus |
JP2012222024A (en) | 2011-04-05 | 2012-11-12 | Hitachi Kokusai Electric Inc | Substrate processing device and semiconductor device manufacturing method |
TW201435138A (en) * | 2012-12-21 | 2014-09-16 | Applied Materials Inc | Apparatus and methods for symmetrical gas distribution with high purge efficiency |
US20150030766A1 (en) * | 2013-07-25 | 2015-01-29 | Novellus Systems, Inc. | Pedestal bottom clean for improved fluorine utilization and integrated symmetric foreline |
US20160056032A1 (en) * | 2014-08-22 | 2016-02-25 | Lam Research Corporation | Methods and apparatuses for stable deposition rate control in low temperature ald systems by showerhead active heating and/or pedestal cooling |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
JP2016169402A (en) | 2015-03-11 | 2016-09-23 | 株式会社日立国際電気 | Substrate treatment device and method for manufacturing semiconductor device |
JP2016174056A (en) | 2015-03-16 | 2016-09-29 | 株式会社東芝 | Semiconductor manufacturing device, and method of manufacturing semiconductor device |
US20170053792A1 (en) | 2015-08-21 | 2017-02-23 | Applied Materials, Inc. | High Temperature Thermal ALD Silicon Nitride Films |
TWI727024B (en) | 2016-04-15 | 2021-05-11 | 美商應用材料股份有限公司 | Micro-volume deposition chamber |
US9738977B1 (en) | 2016-06-17 | 2017-08-22 | Lam Research Corporation | Showerhead curtain gas method and system for film profile modulation |
-
2019
- 2019-10-21 US US16/658,396 patent/US11220747B2/en active Active
- 2019-10-21 TW TW108137855A patent/TWI754180B/en active
- 2019-10-22 JP JP2021522037A patent/JP7249407B2/en active Active
- 2019-10-22 KR KR1020217016310A patent/KR102638144B1/en active IP Right Grant
- 2019-10-22 WO PCT/US2019/057326 patent/WO2020092047A1/en active Application Filing
- 2019-10-22 SG SG11202104000XA patent/SG11202104000XA/en unknown
- 2019-10-22 CN CN201980076654.3A patent/CN113169037A/en active Pending
Also Published As
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CN113169037A (en) | 2021-07-23 |
JP2022505629A (en) | 2022-01-14 |
JP7249407B2 (en) | 2023-03-30 |
US11220747B2 (en) | 2022-01-11 |
WO2020092047A1 (en) | 2020-05-07 |
TWI754180B (en) | 2022-02-01 |
TW202027241A (en) | 2020-07-16 |
US20200131636A1 (en) | 2020-04-30 |
KR102638144B1 (en) | 2024-02-20 |
KR20210068143A (en) | 2021-06-08 |
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