SG11202003348YA - Etching compositions - Google Patents

Etching compositions

Info

Publication number
SG11202003348YA
SG11202003348YA SG11202003348YA SG11202003348YA SG11202003348YA SG 11202003348Y A SG11202003348Y A SG 11202003348YA SG 11202003348Y A SG11202003348Y A SG 11202003348YA SG 11202003348Y A SG11202003348Y A SG 11202003348YA SG 11202003348Y A SG11202003348Y A SG 11202003348YA
Authority
SG
Singapore
Prior art keywords
etching compositions
etching
compositions
Prior art date
Application number
SG11202003348YA
Other languages
English (en)
Inventor
Atsushi Mizutani
Original Assignee
Fujifilm Electronic Materials Usa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials Usa Inc filed Critical Fujifilm Electronic Materials Usa Inc
Publication of SG11202003348YA publication Critical patent/SG11202003348YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
SG11202003348YA 2017-10-19 2018-10-18 Etching compositions SG11202003348YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762574279P 2017-10-19 2017-10-19
PCT/US2018/056439 WO2019079547A1 (en) 2017-10-19 2018-10-18 ETCHING COMPOSITIONS

Publications (1)

Publication Number Publication Date
SG11202003348YA true SG11202003348YA (en) 2020-05-28

Family

ID=66169758

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202003348YA SG11202003348YA (en) 2017-10-19 2018-10-18 Etching compositions

Country Status (8)

Country Link
US (2) US10889757B2 (zh)
EP (1) EP3697866B1 (zh)
JP (2) JP2021500748A (zh)
KR (1) KR20200073237A (zh)
CN (1) CN111225965B (zh)
SG (1) SG11202003348YA (zh)
TW (1) TWI804519B (zh)
WO (1) WO2019079547A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10889757B2 (en) 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
CN114761878A (zh) * 2019-10-17 2022-07-15 弗萨姆材料美国有限责任公司 用于euv掩模保护结构的蚀刻组合物及方法
CN111809182A (zh) * 2020-07-08 2020-10-23 江苏和达电子科技有限公司 一种用于铜/钼（铌）/igzo膜层的刻蚀液及其制备方法和应用
CN112795923B (zh) * 2020-12-24 2023-01-24 江苏和达电子科技有限公司 一种铜蚀刻液组合物及其制备方法和应用
WO2023064145A1 (en) * 2021-10-12 2023-04-20 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2141235C3 (de) 1971-08-17 1980-08-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Ätzmittel für metallbeschichtete SUiciumhalbleiterscheiben
JPH07286172A (ja) * 1994-04-20 1995-10-31 Asahi Glass Co Ltd エッチング液およびエッチング方法
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US6717019B2 (en) 2002-01-30 2004-04-06 Air Products And Chemicals, Inc. Glycidyl ether-capped acetylenic diol ethoxylate surfactants
US7399365B2 (en) * 2003-04-18 2008-07-15 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
KR20060014388A (ko) * 2003-05-02 2006-02-15 이케이씨 테크놀로지, 인코포레이티드 반도체 공정에서의 에칭후 잔류물의 제거 방법
WO2005019499A1 (ja) * 2003-08-20 2005-03-03 Daikin Industries, Ltd. 金属変質層の除去液及び金属変質層の除去方法
WO2007111694A2 (en) * 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
KR100860367B1 (ko) * 2006-08-21 2008-09-25 제일모직주식회사 금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액
US20100015807A1 (en) * 2006-12-22 2010-01-21 Techno Semichem Co., Ltd. Chemical Mechanical Polishing Composition for Copper Comprising Zeolite
TW200918664A (en) 2007-06-13 2009-05-01 Advanced Tech Materials Wafer reclamation compositions and methods
JP4941335B2 (ja) * 2008-01-31 2012-05-30 三菱化学株式会社 エッチング液及びエッチング方法
US7790624B2 (en) * 2008-07-16 2010-09-07 Global Foundries Inc. Methods for removing a metal-comprising material from a semiconductor substrate
SG10201505535VA (en) * 2010-07-16 2015-09-29 Entegris Inc Aqueous cleaner for the removal of post-etch residues
SG189292A1 (en) * 2010-10-06 2013-05-31 Advanced Tech Materials Composition and process for selectively etching metal nitrides
WO2012154498A2 (en) 2011-05-06 2012-11-15 Advanced Technology Materials, Inc. Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
JP5913869B2 (ja) * 2011-08-31 2016-04-27 林純薬工業株式会社 エッチング液組成物およびエッチング方法
JP2014103179A (ja) * 2012-11-16 2014-06-05 Fujifilm Corp 半導体基板のエッチング液、これを用いたエッチング方法及び半導体素子の製造方法
KR101790090B1 (ko) * 2013-05-02 2017-10-25 후지필름 가부시키가이샤 에칭 방법, 이에 이용하는 에칭액 및 에칭액의 키트, 및 반도체 기판 제품의 제조 방법
CN112442374A (zh) * 2013-07-31 2021-03-05 恩特格里斯公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
ITMI20131322A1 (it) * 2013-08-02 2015-02-03 Milano Politecnico Processo di riduzione di co2 per produzione di gas di sintesi.
US10490417B2 (en) 2014-03-18 2019-11-26 Fujifilm Electronic Materials U.S.A., Inc. Etching composition
JP6121959B2 (ja) 2014-09-11 2017-04-26 株式会社東芝 エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液
US10400167B2 (en) * 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
CN105633170A (zh) * 2016-02-23 2016-06-01 广州新视界光电科技有限公司 金属氧化物薄膜晶体管及其制备方法以及阵列基板和显示装置
US10889757B2 (en) 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions

Also Published As

Publication number Publication date
EP3697866A4 (en) 2020-11-18
US11198816B2 (en) 2021-12-14
US10889757B2 (en) 2021-01-12
US20210087467A1 (en) 2021-03-25
KR20200073237A (ko) 2020-06-23
JP2021500748A (ja) 2021-01-07
TWI804519B (zh) 2023-06-11
EP3697866A1 (en) 2020-08-26
TW201923040A (zh) 2019-06-16
CN111225965A (zh) 2020-06-02
CN111225965B (zh) 2021-12-03
JP2023182750A (ja) 2023-12-26
EP3697866B1 (en) 2023-09-27
WO2019079547A1 (en) 2019-04-25
US20190119571A1 (en) 2019-04-25

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