SG11201909369RA - Electroless plating process - Google Patents

Electroless plating process

Info

Publication number
SG11201909369RA
SG11201909369RA SG11201909369RA SG11201909369RA SG 11201909369R A SG11201909369R A SG 11201909369RA SG 11201909369R A SG11201909369R A SG 11201909369RA SG 11201909369R A SG11201909369R A SG 11201909369RA
Authority
SG
Singapore
Prior art keywords
electroless plating
film
plating process
copper material
plating method
Prior art date
Application number
Other languages
English (en)
Inventor
Tomohito Kato
Hideto Watanabe
Original Assignee
Kojima Chemicals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kojima Chemicals Co Ltd filed Critical Kojima Chemicals Co Ltd
Publication of SG11201909369RA publication Critical patent/SG11201909369RA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1637—Composition of the substrate metallic substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C18/1601—Process or apparatus
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    • C23C18/1689—After-treatment
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer, layered thin film adhesion layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/072—Electroless plating, e.g. finish plating or initial plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/073—Displacement plating, substitution plating or immersion plating, e.g. for finish plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0789—Aqueous acid solution, e.g. for cleaning or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG11201909369R 2017-06-28 2018-06-21 Electroless plating process SG11201909369RA (en)

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JP2017126052A JP6466521B2 (ja) 2017-06-28 2017-06-28 無電解めっきプロセス
PCT/JP2018/023630 WO2019004056A1 (fr) 2017-06-28 2018-06-21 Procédé de dépôt autocatalytique

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KR (1) KR102084905B1 (fr)
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JP6474860B2 (ja) * 2017-06-28 2019-02-27 小島化学薬品株式会社 無電解ニッケルストライクめっき液及びニッケルめっき皮膜の成膜方法
MX2022006118A (es) * 2019-11-20 2022-06-14 Atotech Deutschland Gmbh & Co Kg Ba?os de niquelado o deposicion por reduccion quimica de aleaciones de niquel, un metodo para deposicion de aleaciones de niquel, depositos de aleacion de niquel, y usos de tales depositos formados de aleaciones de niquel.
JP2021110009A (ja) * 2020-01-14 2021-08-02 小島化学薬品株式会社 無電解めっきプロセス及び二層めっき皮膜
EP3922753A1 (fr) * 2020-06-10 2021-12-15 ATOTECH Deutschland GmbH Solution de placage de nickel ou de cobalt chimique
JP6841462B1 (ja) * 2020-07-03 2021-03-10 奥野製薬工業株式会社 無電解めっき用触媒付与液

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
US5235139A (en) * 1990-09-12 1993-08-10 Macdermid, Incorprated Method for fabricating printed circuits
JP3035676B2 (ja) * 1991-10-08 2000-04-24 奥野製薬工業株式会社 亜鉛−アルミニウム合金への無電解ニッケルめっき方法、触媒化処理用組成物、活性化処理用組成物及び無電解ニッケルストライクめっき用組成物
JP3393190B2 (ja) * 1999-02-22 2003-04-07 有限会社関東学院大学表面工学研究所 銅パターンの選択的活性化方法およびこれに用いる活性化剤
CN101151399B (zh) * 2005-04-01 2010-12-29 日矿金属株式会社 镀覆基材
JP2007031826A (ja) * 2005-06-23 2007-02-08 Hitachi Chem Co Ltd 接続用端子、およびこれを有する半導体搭載用基板
JP5526440B2 (ja) * 2007-01-17 2014-06-18 奥野製薬工業株式会社 パラジウム皮膜用還元析出型無電解金めっき液を用いて形成されたプリント配線板
JP5573429B2 (ja) * 2009-08-10 2014-08-20 住友ベークライト株式会社 無電解ニッケル−パラジウム−金めっき方法、めっき処理物、プリント配線板、インターポーザ、および半導体装置
KR101310256B1 (ko) * 2011-06-28 2013-09-23 삼성전기주식회사 인쇄회로기판의 무전해 표면처리 도금층 및 이의 제조방법
EP2873752B1 (fr) * 2012-07-13 2020-05-20 Toyo Kohan Co., Ltd. Procédé de dépôt d'or sans courant et matériau revêtu d'un placage d'or
KR20140035701A (ko) * 2012-09-14 2014-03-24 삼성전기주식회사 금 박막 형성 방법 및 인쇄회로기판
JP6201622B2 (ja) * 2013-10-21 2017-09-27 日立化成株式会社 接続端子及びそれを用いた半導体チップ搭載用基板
JP2015110821A (ja) * 2013-12-06 2015-06-18 学校法人関東学院 アルミニウム材の表面にニッケル層を形成する方法、その形成方法を用いた半導体ウエハのアルミニウム電極表面へのニッケル層の形成方法及びその形成方法を用いて得られる半導体ウエハ基板
JP6017726B2 (ja) * 2014-08-25 2016-11-02 小島化学薬品株式会社 還元型無電解金めっき液及び当該めっき液を用いた無電解金めっき方法
JP2016160504A (ja) * 2015-03-03 2016-09-05 学校法人関東学院 無電解Ｎｉ／Ａｕめっき皮膜の形成方法及びその形成方法で得られた無電解Ｎｉ／Ａｕめっき皮膜
JP6025899B2 (ja) * 2015-03-30 2016-11-16 上村工業株式会社 無電解ニッケルめっき浴及びこれを用いた無電解めっき方法
CN105386016B (zh) * 2015-10-21 2018-01-19 东莞市发斯特精密五金有限公司 化学镀镍方法及化学镀铜镍导电线路的方法

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TWI668330B (zh) 2019-08-11
EP3647461A1 (fr) 2020-05-06
WO2019004056A1 (fr) 2019-01-03
CN110325665B (zh) 2021-02-12
KR20190102097A (ko) 2019-09-02
JP6466521B2 (ja) 2019-02-06
CN110325665A (zh) 2019-10-11
KR102084905B1 (ko) 2020-03-04
JP2019007067A (ja) 2019-01-17
US20200048773A1 (en) 2020-02-13
EP3647461A4 (fr) 2021-05-05
TW201905239A (zh) 2019-02-01

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