SG11201902696WA - Method for pulling a single crystal of semiconductor material from a melt which is contained in a crucible - Google Patents

Method for pulling a single crystal of semiconductor material from a melt which is contained in a crucible

Info

Publication number
SG11201902696WA
SG11201902696WA SG11201902696WA SG11201902696WA SG11201902696WA SG 11201902696W A SG11201902696W A SG 11201902696WA SG 11201902696W A SG11201902696W A SG 11201902696WA SG 11201902696W A SG11201902696W A SG 11201902696WA SG 11201902696W A SG11201902696W A SG 11201902696WA
Authority
SG
Singapore
Prior art keywords
pulling
single crystal
melt
crucible
semiconductor material
Prior art date
Application number
SG11201902696WA
Other languages
English (en)
Inventor
Thomas Schröck
Walter Heuwieser
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201902696WA publication Critical patent/SG11201902696WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11201902696WA 2016-10-10 2017-09-28 Method for pulling a single crystal of semiconductor material from a melt which is contained in a crucible SG11201902696WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016219605.7A DE102016219605A1 (de) 2016-10-10 2016-10-10 Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist
PCT/EP2017/074603 WO2018069051A1 (de) 2016-10-10 2017-09-28 Verfahren zum ziehen eines einkristalls aus halbleitermaterial aus einer schmelze, die in einem tiegel enthalten ist

Publications (1)

Publication Number Publication Date
SG11201902696WA true SG11201902696WA (en) 2019-05-30

Family

ID=60051491

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201902696WA SG11201902696WA (en) 2016-10-10 2017-09-28 Method for pulling a single crystal of semiconductor material from a melt which is contained in a crucible

Country Status (9)

Country Link
US (1) US11060202B2 (ko)
EP (1) EP3523465B1 (ko)
JP (1) JP6816267B2 (ko)
KR (1) KR102258435B1 (ko)
CN (1) CN109804109B (ko)
DE (1) DE102016219605A1 (ko)
SG (1) SG11201902696WA (ko)
TW (1) TWI659132B (ko)
WO (1) WO2018069051A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019211609A1 (de) 2019-08-01 2021-02-04 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silizium gemäß der Czochralski-Methode aus einer Schmelze
EP4008813A1 (de) 2020-12-04 2022-06-08 Siltronic AG Verfahren zum ziehen eines einkristalls nach der czochralski-methode

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033299A (ja) * 1983-07-29 1985-02-20 Toshiba Corp 単結晶の製造装置
DE68917054T2 (de) * 1988-08-19 1995-01-05 Mitsubishi Materials Corp Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen.
JPH07109195A (ja) 1993-10-15 1995-04-25 Sumitomo Metal Ind Ltd 結晶成長装置及び結晶成長方法
US5653799A (en) 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
JPH09118585A (ja) * 1995-10-26 1997-05-06 Kokusai Electric Co Ltd 単結晶引上装置および単結晶の引上方法
DE69601424T2 (de) * 1996-06-27 1999-06-02 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Steuerung des Kristallwachstums
CN1178844A (zh) * 1996-08-08 1998-04-15 Memc电子材料有限公司 切克劳斯基法生长硅的温度和时间关系的控制方法
US5885344A (en) 1997-08-08 1999-03-23 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth
US5968263A (en) * 1998-04-01 1999-10-19 Memc Electronic Materials, Inc. Open-loop method and system for controlling growth of semiconductor crystal
CN1329682A (zh) * 1998-10-14 2002-01-02 Memc电子材料有限公司 精确提拉晶体的方法和装置
US6241818B1 (en) 1999-04-07 2001-06-05 Memc Electronic Materials, Inc. Method and system of controlling taper growth in a semiconductor crystal growth process
US6203611B1 (en) 1999-10-19 2001-03-20 Memc Electronic Materials, Inc. Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
KR100665683B1 (ko) * 2002-07-05 2007-01-09 가부시키가이샤 섬코 실리콘 단결정 제조방법
JP4955237B2 (ja) * 2005-08-12 2012-06-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 無駄時間をもつ時変系制御対象のための制御システム及び方法
CN100383295C (zh) * 2006-03-31 2008-04-23 浙江大学 直拉式晶体生长炉自动控制方法
DE102006060359B4 (de) 2006-12-20 2013-09-05 Siltronic Ag Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium
JP2010150056A (ja) 2008-12-24 2010-07-08 Showa Denko Kk サファイア単結晶の製造方法
CN101591802A (zh) * 2009-07-10 2009-12-02 无锡市惠德晶体控制设备有限公司 提拉法晶体生长的等径控制方法
DE102011079284B3 (de) 2011-07-15 2012-11-29 Siltronic Ag Ringförmiger Widerstandsheizer zum Zuführen von Wärme zu einem wachsenden Einkristall
DE102013210687B4 (de) * 2013-06-07 2018-12-06 Siltronic Ag Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser

Also Published As

Publication number Publication date
CN109804109A (zh) 2019-05-24
JP2019530632A (ja) 2019-10-24
TWI659132B (zh) 2019-05-11
EP3523465A1 (de) 2019-08-14
KR20190058630A (ko) 2019-05-29
WO2018069051A1 (de) 2018-04-19
EP3523465B1 (de) 2020-02-19
TW201814092A (zh) 2018-04-16
US20190345630A1 (en) 2019-11-14
CN109804109B (zh) 2021-12-10
JP6816267B2 (ja) 2021-01-20
DE102016219605A1 (de) 2018-04-12
KR102258435B1 (ko) 2021-06-01
US11060202B2 (en) 2021-07-13

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