SG11201902696WA - Method for pulling a single crystal of semiconductor material from a melt which is contained in a crucible - Google Patents
Method for pulling a single crystal of semiconductor material from a melt which is contained in a crucibleInfo
- Publication number
- SG11201902696WA SG11201902696WA SG11201902696WA SG11201902696WA SG11201902696WA SG 11201902696W A SG11201902696W A SG 11201902696WA SG 11201902696W A SG11201902696W A SG 11201902696WA SG 11201902696W A SG11201902696W A SG 11201902696WA SG 11201902696W A SG11201902696W A SG 11201902696WA
- Authority
- SG
- Singapore
- Prior art keywords
- pulling
- single crystal
- melt
- crucible
- semiconductor material
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016219605.7A DE102016219605A1 (de) | 2016-10-10 | 2016-10-10 | Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist |
| PCT/EP2017/074603 WO2018069051A1 (fr) | 2016-10-10 | 2017-09-28 | Procédé pour tirer un monocristal en matériau semi-conducteur à partir d'une masse fondue qui est contenue dans un creuset |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201902696WA true SG11201902696WA (en) | 2019-05-30 |
Family
ID=60051491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201902696WA SG11201902696WA (en) | 2016-10-10 | 2017-09-28 | Method for pulling a single crystal of semiconductor material from a melt which is contained in a crucible |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US11060202B2 (fr) |
| EP (1) | EP3523465B1 (fr) |
| JP (1) | JP6816267B2 (fr) |
| KR (1) | KR102258435B1 (fr) |
| CN (1) | CN109804109B (fr) |
| DE (1) | DE102016219605A1 (fr) |
| SG (1) | SG11201902696WA (fr) |
| TW (1) | TWI659132B (fr) |
| WO (1) | WO2018069051A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102019211609A1 (de) | 2019-08-01 | 2021-02-04 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium gemäß der Czochralski-Methode aus einer Schmelze |
| EP4008813A1 (fr) | 2020-12-04 | 2022-06-08 | Siltronic AG | Procédé de tirage d'un monocristal selon le procédé de czochralski |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6033299A (ja) * | 1983-07-29 | 1985-02-20 | Toshiba Corp | 単結晶の製造装置 |
| US5074953A (en) * | 1988-08-19 | 1991-12-24 | Mitsubishi Materials Corporation | Method for monocrystalline growth of dissociative compound semiconductors |
| JPH07109195A (ja) | 1993-10-15 | 1995-04-25 | Sumitomo Metal Ind Ltd | 結晶成長装置及び結晶成長方法 |
| US5653799A (en) | 1995-06-02 | 1997-08-05 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
| JPH09118585A (ja) * | 1995-10-26 | 1997-05-06 | Kokusai Electric Co Ltd | 単結晶引上装置および単結晶の引上方法 |
| DE69601424T2 (de) * | 1996-06-27 | 1999-06-02 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Steuerung des Kristallwachstums |
| CN1178844A (zh) * | 1996-08-08 | 1998-04-15 | Memc电子材料有限公司 | 切克劳斯基法生长硅的温度和时间关系的控制方法 |
| US5885344A (en) * | 1997-08-08 | 1999-03-23 | Memc Electronic Materials, Inc. | Non-dash neck method for single crystal silicon growth |
| US5968263A (en) * | 1998-04-01 | 1999-10-19 | Memc Electronic Materials, Inc. | Open-loop method and system for controlling growth of semiconductor crystal |
| US6241818B1 (en) | 1999-04-07 | 2001-06-05 | Memc Electronic Materials, Inc. | Method and system of controlling taper growth in a semiconductor crystal growth process |
| US6203611B1 (en) * | 1999-10-19 | 2001-03-20 | Memc Electronic Materials, Inc. | Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth |
| KR100665683B1 (ko) * | 2002-07-05 | 2007-01-09 | 가부시키가이샤 섬코 | 실리콘 단결정 제조방법 |
| JP4955237B2 (ja) * | 2005-08-12 | 2012-06-20 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 無駄時間をもつ時変系制御対象のための制御システム及び方法 |
| CN100383295C (zh) * | 2006-03-31 | 2008-04-23 | 浙江大学 | 直拉式晶体生长炉自动控制方法 |
| DE102006060359B4 (de) | 2006-12-20 | 2013-09-05 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium |
| JP2010150056A (ja) | 2008-12-24 | 2010-07-08 | Showa Denko Kk | サファイア単結晶の製造方法 |
| CN101591802A (zh) | 2009-07-10 | 2009-12-02 | 无锡市惠德晶体控制设备有限公司 | 提拉法晶体生长的等径控制方法 |
| DE102011079284B3 (de) | 2011-07-15 | 2012-11-29 | Siltronic Ag | Ringförmiger Widerstandsheizer zum Zuführen von Wärme zu einem wachsenden Einkristall |
| DE102013210687B4 (de) | 2013-06-07 | 2018-12-06 | Siltronic Ag | Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser |
-
2016
- 2016-10-10 DE DE102016219605.7A patent/DE102016219605A1/de not_active Withdrawn
-
2017
- 2017-09-28 US US16/322,729 patent/US11060202B2/en active Active
- 2017-09-28 EP EP17781430.8A patent/EP3523465B1/fr active Active
- 2017-09-28 KR KR1020197013110A patent/KR102258435B1/ko active IP Right Grant
- 2017-09-28 WO PCT/EP2017/074603 patent/WO2018069051A1/fr active Application Filing
- 2017-09-28 CN CN201780062661.9A patent/CN109804109B/zh active Active
- 2017-09-28 JP JP2019518064A patent/JP6816267B2/ja active Active
- 2017-09-28 SG SG11201902696WA patent/SG11201902696WA/en unknown
- 2017-10-05 TW TW106134337A patent/TWI659132B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI659132B (zh) | 2019-05-11 |
| KR102258435B1 (ko) | 2021-06-01 |
| TW201814092A (zh) | 2018-04-16 |
| EP3523465B1 (fr) | 2020-02-19 |
| KR20190058630A (ko) | 2019-05-29 |
| JP6816267B2 (ja) | 2021-01-20 |
| CN109804109A (zh) | 2019-05-24 |
| WO2018069051A1 (fr) | 2018-04-19 |
| CN109804109B (zh) | 2021-12-10 |
| JP2019530632A (ja) | 2019-10-24 |
| US11060202B2 (en) | 2021-07-13 |
| EP3523465A1 (fr) | 2019-08-14 |
| US20190345630A1 (en) | 2019-11-14 |
| DE102016219605A1 (de) | 2018-04-12 |
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