SG11201901887UA - Process for the generation of metal-containing films - Google Patents

Process for the generation of metal-containing films

Info

Publication number
SG11201901887UA
SG11201901887UA SG11201901887UA SG11201901887UA SG11201901887UA SG 11201901887U A SG11201901887U A SG 11201901887UA SG 11201901887U A SG11201901887U A SG 11201901887UA SG 11201901887U A SG11201901887U A SG 11201901887UA SG 11201901887U A SG11201901887U A SG 11201901887UA
Authority
SG
Singapore
Prior art keywords
international
group
metal
basf
pct
Prior art date
Application number
SG11201901887UA
Other languages
English (en)
Inventor
David Dominique Schweinfurth
Falko Abels
Lukas Mayr
Daniel Loeffler
Daniel Waldmann
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201901887UA publication Critical patent/SG11201901887UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
SG11201901887UA 2016-10-13 2017-10-05 Process for the generation of metal-containing films SG11201901887UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16193697 2016-10-13
PCT/EP2017/075304 WO2018069130A1 (en) 2016-10-13 2017-10-05 Process for the generation of metal-containing films

Publications (1)

Publication Number Publication Date
SG11201901887UA true SG11201901887UA (en) 2019-04-29

Family

ID=57226755

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201901887UA SG11201901887UA (en) 2016-10-13 2017-10-05 Process for the generation of metal-containing films

Country Status (9)

Country Link
US (1) US20190360096A1 (de)
EP (1) EP3526363A1 (de)
JP (1) JP2019532184A (de)
KR (1) KR20190066048A (de)
CN (1) CN109844172A (de)
IL (1) IL265868A (de)
SG (1) SG11201901887UA (de)
TW (1) TW201829833A (de)
WO (1) WO2018069130A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111727272B (zh) 2017-12-20 2023-04-28 巴斯夫欧洲公司 产生含金属膜的方法
EP3980578A1 (de) * 2019-06-06 2022-04-13 Basf Se Verfahren zur erzeugung von metall- oder halbmetallhaltigen schichten
WO2020244988A1 (en) * 2019-06-06 2020-12-10 Basf Se Process for the generation of metal- or semimetal-containing films
IL293042A (en) * 2019-11-22 2022-07-01 Basf Se A process for creating layers containing a metal or semi-metal

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4316883C2 (de) * 1993-05-19 1996-01-25 Michael Dr Denk Silylen, Verfahren zur Herstellung von Silylen oder Carben sowie die Verwendung des Silylens
US5389401A (en) * 1994-02-23 1995-02-14 Gordon; Roy G. Chemical vapor deposition of metal oxides
TW200611990A (en) * 2004-08-16 2006-04-16 Du Pont Atomic layer deposition of copper using surface-activating agents
WO2009009882A1 (en) 2007-07-16 2009-01-22 F. Hoffmann-La Roche Ag An anti-cancer cytotoxic monoclonal antibody
US8765223B2 (en) * 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
JP5707768B2 (ja) 2010-07-30 2015-04-30 ブラザー工業株式会社 画像形成装置
CA2863432A1 (en) 2012-02-01 2013-08-08 Sfc Koenig Ag Element, preferably a closure element for inserting into a bore in a component
US9157149B2 (en) * 2013-06-28 2015-10-13 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
EP2857550A1 (de) * 2013-10-02 2015-04-08 Basf Se Aminvorläufer zum Ablagern von Graphen

Also Published As

Publication number Publication date
WO2018069130A1 (en) 2018-04-19
EP3526363A1 (de) 2019-08-21
KR20190066048A (ko) 2019-06-12
JP2019532184A (ja) 2019-11-07
CN109844172A (zh) 2019-06-04
IL265868A (en) 2019-06-30
US20190360096A1 (en) 2019-11-28
TW201829833A (zh) 2018-08-16

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