SG11201805580QA - Boron nitride material and method of preparation thereof - Google Patents

Boron nitride material and method of preparation thereof

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Publication number
SG11201805580QA
SG11201805580QA SG11201805580QA SG11201805580QA SG11201805580QA SG 11201805580Q A SG11201805580Q A SG 11201805580QA SG 11201805580Q A SG11201805580Q A SG 11201805580QA SG 11201805580Q A SG11201805580Q A SG 11201805580QA SG 11201805580Q A SG11201805580Q A SG 11201805580QA
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Singapore
Prior art keywords
nanyang
international
singapore
boron nitride
avenue
Prior art date
Application number
SG11201805580QA
Inventor
Yingjie Roland Tay
Hongling Li
Siu Hon Tsang
Hang Tong Edwin Teo
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Univ Nanyang Tech
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Publication date
Application filed by Univ Nanyang Tech filed Critical Univ Nanyang Tech
Publication of SG11201805580QA publication Critical patent/SG11201805580QA/en

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
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    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62227—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres
    • C04B35/62272—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres based on non-oxide ceramics
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/628—Coating the powders or the macroscopic reinforcing agents
    • C04B35/62844—Coating fibres
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    • C04B35/62865—Nitrides
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    • C04B38/0022—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof obtained by a chemical conversion or reaction other than those relating to the setting or hardening of cement-like material or to the formation of a sol or a gel, e.g. by carbonising or pyrolysing preformed cellular materials based on polymers, organo-metallic or organo-silicon precursors
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    • C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
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    • C04B38/0615—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by burning-out added substances by burning natural expanding materials or by sublimating or melting out added substances the burned-out substance being a monolitic element having approximately the same dimensions as the final article, e.g. a porous polyurethane sheet or a prepreg obtained by bonding together resin particles
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/36—Carbonitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 1111111101111011101010111110101111101110111011111111111111011011111101111011111 International Bureau ... .1 j ..... .....!;,,, (10) International Publication Number (43) International Publication Date WO 2017/119851 Al 13 July 2017 (13.07.2017) WI P0 I P CT (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every C23C 16/34 (2006.01) CO1B 6/11 (2006.01) kind of national protection available): AE, AG, AL, AM, C23C 16/36 (2006.01) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, (21) International Application Number: DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, PCT/SG2017/050011 HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, (22) International Filing Date: KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, 9 January 2017 (09.01.2017) MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, (25) Filing Language: English RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, (26) Publication Language: English TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (30) Priority Data: 10201600155R 8 January 2016 (08.01.2016) SG (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (71) Applicant: NANYANG TECHNOLOGICAL UNIVER- GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, SITY [SG/SG]; 50 Nanyang Avenue, Singapore 639798 TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (SG). TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FL FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, (72) Inventors: TAY, Yingjie Roland; c/o Nanyang Technolo gical University, 50 Nanyang Avenue, Singapore 639798 LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CL CM, GA, GN, GQ, (SG). LI, Hongling; c/o Nanyang Technological Univer- GW, KM, ML, MR, NE, SN, TD, TG). sity, 50 Nanyang Avenue, Singapore 639798 (SG). TSANG, Siu Hon; c/o Nanyang Technological University, Published: 50 Nanyang Avenue, Singapore 639798 (SG). TEO, Hang with international search report (Art. 2 1 (3)) Tong Edwin; c/o Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (SG). (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; P.O Box 1088, Rochor Post Office, Rochor Road, Singa- pore 911833 (SG). (54) Title: BORON NITRIDE MATERIAL AND METHOD OF PREPARATION THEREOF FIG. 1E ve 8 .- '1A-‘3,—• ..., 0 .,,,,,,.., 10 ,,,, tir VP' AV 'lir —\"*. • h-BN Il .4 Me a l\ • ifir s •-(3/ 3 13 •.. 0** \ :, v . lir kin ( sum, a 2 .1, 0 ,,, ,,• co a --. sr- . tz. 13.04 11 11 L ---- (57) : A method of preparing a boron nitride material, such as boron nitride (BN) or boron carbonitride (BCN), is provided. .::::) The method may include providing a substrate, and sublimating an amine borane complex onto the substrate to obtain the boron ni - el tride material. The amine borane complex may include, but is not limited to, borazine, amino borane, trimethylamine borane and tri- O ethylamine borane. In addition, the temperature at which the sublimating is carried out may be varied to control composition of the boron nitride material formed. In addition, various morphologies can be obtained by using the present method, namely films, nan- otubes and porous foam.
SG11201805580QA 2016-01-08 2017-01-09 Boron nitride material and method of preparation thereof SG11201805580QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201600155R 2016-01-08
PCT/SG2017/050011 WO2017119851A1 (en) 2016-01-08 2017-01-09 Boron nitride material and method of preparation thereof

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US (1) US10457553B2 (en)
EP (1) EP3400319A4 (en)
JP (1) JP2019503326A (en)
CN (1) CN109196139B (en)
SG (1) SG11201805580QA (en)
WO (1) WO2017119851A1 (en)

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CN113176247A (en) * 2015-10-07 2021-07-27 加利福尼亚大学校董会 Graphene-based multi-modal sensor
CN111099601A (en) * 2019-11-15 2020-05-05 成都理工大学 Preparation method of micro-mesoporous boron nitride oxide
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