CN117004920A - Gradient h-BNC nano self-cleaning film design method - Google Patents
Gradient h-BNC nano self-cleaning film design method Download PDFInfo
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- CN117004920A CN117004920A CN202310944547.6A CN202310944547A CN117004920A CN 117004920 A CN117004920 A CN 117004920A CN 202310944547 A CN202310944547 A CN 202310944547A CN 117004920 A CN117004920 A CN 117004920A
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- bnc
- gradient
- nano
- film
- design method
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- 238000004140 cleaning Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000013461 design Methods 0.000 title claims abstract description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 13
- 229910052796 boron Inorganic materials 0.000 claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 6
- 239000002120 nanofilm Substances 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000010408 film Substances 0.000 claims 9
- 239000010409 thin film Substances 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002105 nanoparticle Substances 0.000 description 7
- 150000001721 carbon Chemical group 0.000 description 5
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a design method of a gradient h-BNC nano self-cleaning film, which is characterized in that the density of carbon atoms is gradually reduced and the densities of boron atoms and nitrogen atoms are gradually increased along the central to edge area of the film to form the gradient h-BNC nano self-cleaning film. The invention has the advantages that: by adopting atomic density change of boron, carbon and nitrogen atoms, the gradient h-BNC nano film is designed, and has excellent dustproof and self-cleaning capabilities. The gradient h-BNC nano self-cleaning film can greatly reduce the pollution on the surface of a nano device, thereby maintaining the performance of the device.
Description
Technical Field
The invention relates to the field of nanoparticle cleaning, in particular to a gradient h-BNC nanometer self-cleaning film design method.
Background
The development of transportation, energy harvesting and sensory response relies on effective surface cleaning techniques to address dust accumulation. Removal of surface contaminants is readily accomplished on a macroscopic scale, but becomes more challenging as electromechanical devices shrink to nanometer scale. Conventional cleaning methods (e.g., wiping the surface with a cloth) are not suitable for nano-devices because they are difficult to remove nano-particles and may damage device components.
In order to achieve a contamination free surface of the nano-device, one reliable approach is to use external drives such as thermal annealing, mechanical cleaning and plasma treatment, which require a continuous external energy supply, which is less sustainable for long term deployment. In contrast, encapsulation of devices, such as graphene, hexagonal boron nitride (h-BN), and polymers, using two-dimensional materials may protect the surfaces of the nano-devices from contamination without external intervention. However, only current encapsulation materials are concerned with surface protection only and do not address the reduced device performance issue associated with nanoparticle deposition. Recently, in-plane graphene/h-BN heterostructures (h-BNCs) have been successfully prepared by various methods, and their potential applications have attracted widespread attention due to the adjustability of the ternary atomic ratio. It is not known whether the characteristic of adjustable h-BNC atomic ratio can be utilized in the field of dust prevention and self-cleaning.
Disclosure of Invention
In order to solve the existing problems, the invention provides a gradient h-BNC nanometer self-cleaning film design method.
A gradient h-BNC nano self-cleaning film design method is characterized in that the density of carbon atoms is gradually reduced along the direction from the center to the edge, and the densities of boron atoms and nitrogen atoms are gradually increased from the center area to the edge area, so that the h-BNC nano self-cleaning film with the atomic ratio gradient is formed.
Preferably, the diameter or length of the film is 40-100nm.
Preferably, the film is divided into 80-100 annular regions of equal annular width or rectangular regions of equal length.
Preferably, the carbon atom density, the boron atom density, and the nitrogen atom density all vary linearly from the center region to the edge region in the radial direction.
Preferably, the center region has a carbon atom density of 1.0 and the edge regions each have a boron atom and nitrogen atom density of 0.5.
Preferably, the film is produced in the laboratory using CVD techniques.
The invention has the advantages that: by adopting atomic density change of boron, carbon and nitrogen atoms, the gradient h-BNC nano film is designed, and has excellent dustproof and self-cleaning capabilities. The gradient h-BNC nano self-cleaning film can greatly reduce the pollution on the surface of a nano device, thereby maintaining the performance of the device.
Drawings
FIG. 1 is a block diagram of a gradient h-BNC nano self-cleaning film of the invention;
1, a central area; 2. an edge region;
fig. 2 is a conceptual diagram of a film application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
In the description of the embodiments of the present invention, it should be noted that, if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate an azimuth or a positional relationship based on that shown in the drawings, or an azimuth or a positional relationship in which the product of the present invention is conventionally put when used, it is merely for convenience of describing the present invention and simplifying the description, and it does not indicate or imply that the apparatus or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," "overhang" and the like, if any, do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the embodiments of the present invention, "plurality" means at least 2.
In the description of the embodiments of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Examples: the design method of the gradient h-BNC nanometer self-cleaning film comprises the following steps:
along the direction from the center to the edge, the density of the carbon atoms 1 is reduced from the center area to the edge area, and the densities of the boron atoms 2 and the nitrogen atoms 3 are increased from the center area to the edge area, so that the gradient h-BNC nano film is formed. The diameter or length of the film is 40-100nm, and the film is divided into 80-100 annular areas with equal ring width or rectangular areas with equal length. The carbon atom density, the boron atom density and the nitrogen atom density all linearly vary from the center region, which has a carbon atom density of 1.0, to the edge region, which has a boron atom and nitrogen atom density of 0.5, respectively, along the radial direction.
The films may be produced in the laboratory using CVD techniques.
The working principle of the invention is as follows:
the binding energy of the boron atom and the nitrogen atom is larger than that of the carbon atom and the nano-particle, so that the nano-particle has a poor binding energy from the center to the edge on the gradient h-BNC nano-film; at the nanoscale, the binding energy difference produces a gradient force on the nanoparticle from center to edge, the magnitude of which is positively correlated to the film diameter or length, driving the nanoparticle from center to edge.
The gradient h-BNC nano film can not only remove nano solid particles, but also remove nano liquid drops, and has excellent removing capability; the method can reduce the influence on the device performance of the nano photoelectric device and the nano flexible device, and has wide application range.
The invention and its embodiments have been described above with no limitation, and the actual construction is not limited to the embodiments of the invention as shown in the drawings. In summary, if one of ordinary skill in the art is informed by this disclosure, a structural manner and an embodiment similar to the technical solution should not be creatively devised without departing from the gist of the present invention.
Claims (6)
1. A gradient h-BNC nanometer self-cleaning film design method is characterized in that: along the direction from the center to the edge of the film, the density of carbon atoms is reduced, and the densities of boron atoms and nitrogen atoms are increased, so that the h-BNC gradient nano film is formed.
2. The gradient h-BNC nano self-cleaning film design method according to claim 1, which is characterized in that: the diameter or length of the film is 40-100nm.
3. The gradient h-BNC nano self-cleaning film design method according to claim 1, which is characterized in that: the film is divided into 80-100 annular areas with equal annular widths or rectangular areas with equal annular widths.
4. The gradient h-BNC nano self-cleaning film design method according to claim 1, which is characterized in that: the carbon atom density, the boron atom density, and the nitrogen atom density all vary linearly from the center region to the edge region in the radial direction.
5. The gradient h-BNC nano self-cleaning film design method according to claim 1, which is characterized in that: the center region carbon atom density was 1.0, and the edge region boron atom and nitrogen atom densities were 0.5 each.
6. The gradient h-BNC nano self-cleaning film design method according to claim 1, which is characterized in that: the round thin film was produced in the laboratory using CVD techniques.
Priority Applications (1)
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CN202310944547.6A CN117004920A (en) | 2023-07-28 | 2023-07-28 | Gradient h-BNC nano self-cleaning film design method |
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CN202310944547.6A CN117004920A (en) | 2023-07-28 | 2023-07-28 | Gradient h-BNC nano self-cleaning film design method |
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CN202310944547.6A Pending CN117004920A (en) | 2023-07-28 | 2023-07-28 | Gradient h-BNC nano self-cleaning film design method |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110313194A1 (en) * | 2010-06-21 | 2011-12-22 | Samsung Electronics Co., Ltd. | Graphene substituted with boron and nitrogen , method of fabricating the same, and transistor having the same |
CN104561906A (en) * | 2014-12-24 | 2015-04-29 | 武汉理工大学 | Gradient boron carbide film and preparation method thereof |
US20150167170A1 (en) * | 2013-12-12 | 2015-06-18 | The Boeing Company | Gradient thin films |
US20190016600A1 (en) * | 2016-01-08 | 2019-01-17 | Nanyang Technological University | Boron nitride material and method of preparation thereof |
US20200347494A1 (en) * | 2019-05-02 | 2020-11-05 | Samsung Electronics Co., Ltd. | Metal chalcogenide film and method and device for manufacturing the same |
CN113562723A (en) * | 2020-04-29 | 2021-10-29 | 上海大学 | Light impact-resistant carbon material with gradient density structure, preparation method and application |
-
2023
- 2023-07-28 CN CN202310944547.6A patent/CN117004920A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110313194A1 (en) * | 2010-06-21 | 2011-12-22 | Samsung Electronics Co., Ltd. | Graphene substituted with boron and nitrogen , method of fabricating the same, and transistor having the same |
US20150167170A1 (en) * | 2013-12-12 | 2015-06-18 | The Boeing Company | Gradient thin films |
CN104561906A (en) * | 2014-12-24 | 2015-04-29 | 武汉理工大学 | Gradient boron carbide film and preparation method thereof |
US20190016600A1 (en) * | 2016-01-08 | 2019-01-17 | Nanyang Technological University | Boron nitride material and method of preparation thereof |
US20200347494A1 (en) * | 2019-05-02 | 2020-11-05 | Samsung Electronics Co., Ltd. | Metal chalcogenide film and method and device for manufacturing the same |
CN113562723A (en) * | 2020-04-29 | 2021-10-29 | 上海大学 | Light impact-resistant carbon material with gradient density structure, preparation method and application |
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