SG11201810354TA - Method for producing a layer - Google Patents
Method for producing a layerInfo
- Publication number
- SG11201810354TA SG11201810354TA SG11201810354TA SG11201810354TA SG11201810354TA SG 11201810354T A SG11201810354T A SG 11201810354TA SG 11201810354T A SG11201810354T A SG 11201810354TA SG 11201810354T A SG11201810354T A SG 11201810354TA SG 11201810354T A SG11201810354T A SG 11201810354TA
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- producing
- composition
- abo
- donor substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 abstract 5
- 229910052726 zirconium Inorganic materials 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052716 thallium Inorganic materials 0.000 abstract 2
- 229910052684 Cerium Inorganic materials 0.000 abstract 1
- 229910052692 Dysprosium Inorganic materials 0.000 abstract 1
- 229910052693 Europium Inorganic materials 0.000 abstract 1
- 229910052688 Gadolinium Inorganic materials 0.000 abstract 1
- 229910052689 Holmium Inorganic materials 0.000 abstract 1
- 229910052779 Neodymium Inorganic materials 0.000 abstract 1
- 229910052777 Praseodymium Inorganic materials 0.000 abstract 1
- 229910052772 Samarium Inorganic materials 0.000 abstract 1
- 229910052771 Terbium Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 229910052744 lithium Inorganic materials 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 229910052708 sodium Inorganic materials 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1654685A FR3051785A1 (fr) | 2016-05-25 | 2016-05-25 | Procede de fabrication d'une couche |
| PCT/FR2017/051291 WO2017203174A1 (fr) | 2016-05-25 | 2017-05-24 | Procede de fabrication d'une couche |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201810354TA true SG11201810354TA (en) | 2018-12-28 |
Family
ID=56322225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201810354TA SG11201810354TA (en) | 2016-05-25 | 2017-05-24 | Method for producing a layer |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11744153B2 (fr) |
| EP (1) | EP3465788B1 (fr) |
| JP (1) | JP6929880B2 (fr) |
| KR (1) | KR102457258B1 (fr) |
| CN (1) | CN109690798B (fr) |
| FR (1) | FR3051785A1 (fr) |
| SG (1) | SG11201810354TA (fr) |
| WO (1) | WO2017203174A1 (fr) |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4551647A (en) * | 1983-03-08 | 1985-11-05 | General Electric Company | Temperature compensated piezoelectric transducer and lens assembly and method of making the assembly |
| JP3509113B2 (ja) | 1992-04-28 | 2004-03-22 | 旭硝子株式会社 | 非線形光学材料 |
| US6767749B2 (en) * | 2002-04-22 | 2004-07-27 | The United States Of America As Represented By The Secretary Of The Navy | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
| US7557055B2 (en) * | 2004-09-20 | 2009-07-07 | Paratek Microwave, Inc. | Tunable low loss material composition |
| JP4195884B2 (ja) * | 2005-02-17 | 2008-12-17 | Ｎｅｌクリスタル株式会社 | 酸化物強誘電体結晶の処理方法 |
| FR2890489B1 (fr) * | 2005-09-08 | 2008-03-07 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure de type semi-conducteur sur isolant |
| JP5110092B2 (ja) * | 2007-12-25 | 2012-12-26 | 株式会社村田製作所 | 複合圧電基板の製造方法 |
| JP5133279B2 (ja) * | 2009-01-27 | 2013-01-30 | 信越化学工業株式会社 | タンタル酸リチウム結晶の製造方法 |
| FR2942910B1 (fr) * | 2009-03-06 | 2011-09-30 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur |
| US8189981B2 (en) * | 2009-11-23 | 2012-05-29 | The Aerospace Corporation | Stable lithium niobate waveguides, and methods of making and using same |
| JP5555072B2 (ja) * | 2010-06-25 | 2014-07-23 | 富士フイルム株式会社 | 圧電体膜、圧電素子および液体吐出装置 |
| JP5611915B2 (ja) * | 2011-09-16 | 2014-10-22 | 信越化学工業株式会社 | 弾性表面波デバイス用圧電基板の製造方法 |
| FR3004289B1 (fr) * | 2013-04-08 | 2015-05-15 | Soitec Silicon On Insulator | Composant a ondes acoustiques de surface et sa methode de fabrication |
| JP6174061B2 (ja) * | 2014-05-09 | 2017-08-02 | 信越化学工業株式会社 | 圧電性酸化物単結晶基板の製造方法 |
-
2016
- 2016-05-25 FR FR1654685A patent/FR3051785A1/fr active Pending
-
2017
- 2017-05-24 JP JP2018561685A patent/JP6929880B2/ja active Active
- 2017-05-24 WO PCT/FR2017/051291 patent/WO2017203174A1/fr unknown
- 2017-05-24 KR KR1020187037431A patent/KR102457258B1/ko active IP Right Grant
- 2017-05-24 SG SG11201810354TA patent/SG11201810354TA/en unknown
- 2017-05-24 EP EP17732504.0A patent/EP3465788B1/fr active Active
- 2017-05-24 CN CN201780032163.XA patent/CN109690798B/zh active Active
- 2017-05-24 US US16/304,063 patent/US11744153B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US11744153B2 (en) | 2023-08-29 |
| JP6929880B2 (ja) | 2021-09-01 |
| EP3465788B1 (fr) | 2020-05-20 |
| KR20190013899A (ko) | 2019-02-11 |
| CN109690798A (zh) | 2019-04-26 |
| CN109690798B (zh) | 2023-04-28 |
| KR102457258B1 (ko) | 2022-10-20 |
| WO2017203174A1 (fr) | 2017-11-30 |
| EP3465788A1 (fr) | 2019-04-10 |
| US20200259069A1 (en) | 2020-08-13 |
| JP2019523743A (ja) | 2019-08-29 |
| FR3051785A1 (fr) | 2017-12-01 |
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