JP4195884B2 - 酸化物強誘電体結晶の処理方法 - Google Patents
酸化物強誘電体結晶の処理方法 Download PDFInfo
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- JP4195884B2 JP4195884B2 JP2005041303A JP2005041303A JP4195884B2 JP 4195884 B2 JP4195884 B2 JP 4195884B2 JP 2005041303 A JP2005041303 A JP 2005041303A JP 2005041303 A JP2005041303 A JP 2005041303A JP 4195884 B2 JP4195884 B2 JP 4195884B2
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- Prior art keywords
- ferroelectric crystal
- oxide ferroelectric
- crystal
- alkali metal
- temperature
- Prior art date
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- 239000013078 crystal Substances 0.000 title claims description 54
- 238000000034 method Methods 0.000 title claims description 21
- 238000012545 processing Methods 0.000 title claims description 9
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 10
- 239000007791 liquid phase Substances 0.000 claims description 4
- 239000007790 solid phase Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 28
- 229910052697 platinum Inorganic materials 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 230000005616 pyroelectricity Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
ρ=(V/I)×(A/t)
A:電極断面積(cm2)、t:電極間距離(cm)
導電率は体積抵抗率ρの逆数として求められる。
2 白金網
3 白金蓋
W 結晶ウエハ
AH アルカリ金属水酸化物
Claims (4)
- 酸化物強誘電体結晶を処理してその電気的特性を向上させるようにした酸化物強誘電体結晶の処理方法において、気相、液相または固相のアルカリ金属水酸化物が接触する状態で前記酸化物強誘電体結晶を不活性ガス雰囲気中または不活性ガスと還元性ガス雰囲気中で熱処理することを特徴とする酸化物強誘電体結晶の処理方法。
- 酸化物強誘電体結晶を400°C以上、前記酸化物強誘電体結晶のキュリー点温度以下で熱処理することを特徴とする請求項1記載の酸化物強誘電体結晶の処理方法。
- 酸化物強誘電体結晶にアルカリ金属水酸化物の溶液を塗布した後、不活性ガス雰囲気中または不活性ガスと還元性ガス雰囲気中で熱処理することを特徴とする請求項1または2記載の酸化物強誘電体結晶の処理方法。
- アルカリ金属水酸化物の蒸気の存在下で酸化物強誘電体結晶を不活性ガス雰囲気中または不活性ガスと還元性ガス雰囲気中で熱処理することを特徴とする請求項1または2記載の酸化物強誘電体結晶の処理方法。
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JP2005041303A JP4195884B2 (ja) | 2005-02-17 | 2005-02-17 | 酸化物強誘電体結晶の処理方法 |
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JP2006225203A JP2006225203A (ja) | 2006-08-31 |
JP4195884B2 true JP4195884B2 (ja) | 2008-12-17 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4810661B2 (ja) * | 2006-04-27 | 2011-11-09 | 国立大学法人埼玉大学 | 機械電気変換素子及びその製造方法 |
FR3051785A1 (fr) * | 2016-05-25 | 2017-12-01 | Soitec Silicon On Insulator | Procede de fabrication d'une couche |
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