JP4195884B2 - 酸化物強誘電体結晶の処理方法 - Google Patents
酸化物強誘電体結晶の処理方法 Download PDFInfo
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- JP4195884B2 JP4195884B2 JP2005041303A JP2005041303A JP4195884B2 JP 4195884 B2 JP4195884 B2 JP 4195884B2 JP 2005041303 A JP2005041303 A JP 2005041303A JP 2005041303 A JP2005041303 A JP 2005041303A JP 4195884 B2 JP4195884 B2 JP 4195884B2
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- ferroelectric crystal
- oxide ferroelectric
- crystal
- alkali metal
- temperature
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Description
ρ=(V/I)×(A/t)
A:電極断面積(cm2)、t:電極間距離(cm)
導電率は体積抵抗率ρの逆数として求められる。
2 白金網
3 白金蓋
W 結晶ウエハ
AH アルカリ金属水酸化物
Claims (4)
- 酸化物強誘電体結晶を処理してその電気的特性を向上させるようにした酸化物強誘電体結晶の処理方法において、気相、液相または固相のアルカリ金属水酸化物が接触する状態で前記酸化物強誘電体結晶を不活性ガス雰囲気中または不活性ガスと還元性ガス雰囲気中で熱処理することを特徴とする酸化物強誘電体結晶の処理方法。
- 酸化物強誘電体結晶を400°C以上、前記酸化物強誘電体結晶のキュリー点温度以下で熱処理することを特徴とする請求項1記載の酸化物強誘電体結晶の処理方法。
- 酸化物強誘電体結晶にアルカリ金属水酸化物の溶液を塗布した後、不活性ガス雰囲気中または不活性ガスと還元性ガス雰囲気中で熱処理することを特徴とする請求項1または2記載の酸化物強誘電体結晶の処理方法。
- アルカリ金属水酸化物の蒸気の存在下で酸化物強誘電体結晶を不活性ガス雰囲気中または不活性ガスと還元性ガス雰囲気中で熱処理することを特徴とする請求項1または2記載の酸化物強誘電体結晶の処理方法。
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JP2005041303A JP4195884B2 (ja) | 2005-02-17 | 2005-02-17 | 酸化物強誘電体結晶の処理方法 |
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JP2005041303A JP4195884B2 (ja) | 2005-02-17 | 2005-02-17 | 酸化物強誘電体結晶の処理方法 |
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JP2006225203A JP2006225203A (ja) | 2006-08-31 |
JP4195884B2 true JP4195884B2 (ja) | 2008-12-17 |
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JP2005041303A Expired - Fee Related JP4195884B2 (ja) | 2005-02-17 | 2005-02-17 | 酸化物強誘電体結晶の処理方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4810661B2 (ja) | 2006-04-27 | 2011-11-09 | 国立大学法人埼玉大学 | 機械電気変換素子及びその製造方法 |
FR3051785B1 (fr) | 2016-05-25 | 2025-04-25 | Soitec Silicon On Insulator | Procede de fabrication d'une couche |
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