SG11201810354TA - Method for producing a layer - Google Patents
Method for producing a layerInfo
- Publication number
- SG11201810354TA SG11201810354TA SG11201810354TA SG11201810354TA SG11201810354TA SG 11201810354T A SG11201810354T A SG 11201810354TA SG 11201810354T A SG11201810354T A SG 11201810354TA SG 11201810354T A SG11201810354T A SG 11201810354TA SG 11201810354T A SG11201810354T A SG 11201810354TA
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- producing
- composition
- abo
- donor substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 abstract 5
- 229910052726 zirconium Inorganic materials 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052716 thallium Inorganic materials 0.000 abstract 2
- 229910052684 Cerium Inorganic materials 0.000 abstract 1
- 229910052692 Dysprosium Inorganic materials 0.000 abstract 1
- 229910052693 Europium Inorganic materials 0.000 abstract 1
- 229910052688 Gadolinium Inorganic materials 0.000 abstract 1
- 229910052689 Holmium Inorganic materials 0.000 abstract 1
- 229910052779 Neodymium Inorganic materials 0.000 abstract 1
- 229910052777 Praseodymium Inorganic materials 0.000 abstract 1
- 229910052772 Samarium Inorganic materials 0.000 abstract 1
- 229910052771 Terbium Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 229910052744 lithium Inorganic materials 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 229910052708 sodium Inorganic materials 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
Abstract
METHOD FOR PRODUCING A LAYER 5 The invention relates to a method for producing a layer of composition AA’BO 3, where A consists of at least one element selected from: Li, Na, K, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag, Tl and B consists of at least one element selected 10 from: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn, Zr, Tl, characterised in that it comprises: - providing a donor substrate (100) of composition ABO 3, - forming a layer (10) of composition ABO 3 by 15 thinning said donor substrate (100), - before and/or after the thinning step, exposing said layer (10) of composition ABO 3 to a medium (M) containing ions of an element A’ belonging to the same list of elements as A, A’ being different from A, such 20 that said ions penetrate into said layer (10) to form a layer of compos ition AA’BO 3. Figure 1D
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1654685A FR3051785A1 (en) | 2016-05-25 | 2016-05-25 | PROCESS FOR PRODUCING A LAYER |
| PCT/FR2017/051291 WO2017203174A1 (en) | 2016-05-25 | 2017-05-24 | Method for producing a layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201810354TA true SG11201810354TA (en) | 2018-12-28 |
Family
ID=56322225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201810354TA SG11201810354TA (en) | 2016-05-25 | 2017-05-24 | Method for producing a layer |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11744153B2 (en) |
| EP (1) | EP3465788B1 (en) |
| JP (1) | JP6929880B2 (en) |
| KR (1) | KR102457258B1 (en) |
| CN (1) | CN109690798B (en) |
| FR (1) | FR3051785A1 (en) |
| SG (1) | SG11201810354TA (en) |
| WO (1) | WO2017203174A1 (en) |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4551647A (en) * | 1983-03-08 | 1985-11-05 | General Electric Company | Temperature compensated piezoelectric transducer and lens assembly and method of making the assembly |
| JP3509113B2 (en) * | 1992-04-28 | 2004-03-22 | 旭硝子株式会社 | Nonlinear optical material |
| US6767749B2 (en) * | 2002-04-22 | 2004-07-27 | The United States Of America As Represented By The Secretary Of The Navy | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
| US7557055B2 (en) * | 2004-09-20 | 2009-07-07 | Paratek Microwave, Inc. | Tunable low loss material composition |
| JP4195884B2 (en) * | 2005-02-17 | 2008-12-17 | Ｎｅｌクリスタル株式会社 | Method for processing oxide ferroelectric crystal |
| FR2890489B1 (en) | 2005-09-08 | 2008-03-07 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A SEMICONDUCTOR TYPE HETEROSTRUCTURE ON INSULATION |
| WO2009081651A1 (en) * | 2007-12-25 | 2009-07-02 | Murata Manufacturing Co., Ltd. | Composite piezoelectric substrate manufacturing method |
| JP5133279B2 (en) * | 2009-01-27 | 2013-01-30 | 信越化学工業株式会社 | Method for producing lithium tantalate crystals |
| FR2942910B1 (en) | 2009-03-06 | 2011-09-30 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A HETEROSTRUCTURE TO REDUCE THE STRAIN STRENGTH OF THE DONOR SUBSTRATE |
| US8189981B2 (en) * | 2009-11-23 | 2012-05-29 | The Aerospace Corporation | Stable lithium niobate waveguides, and methods of making and using same |
| JP5555072B2 (en) | 2010-06-25 | 2014-07-23 | 富士フイルム株式会社 | Piezoelectric film, piezoelectric element, and liquid ejection device |
| JP5611915B2 (en) * | 2011-09-16 | 2014-10-22 | 信越化学工業株式会社 | Method for manufacturing piezoelectric substrate for surface acoustic wave device |
| FR3004289B1 (en) * | 2013-04-08 | 2015-05-15 | Soitec Silicon On Insulator | SURFACE ACOUSTIC WAVE COMPONENT AND METHOD OF MANUFACTURING THE SAME |
| JP6174061B2 (en) * | 2014-05-09 | 2017-08-02 | 信越化学工業株式会社 | Method for manufacturing piezoelectric oxide single crystal substrate |
-
2016
- 2016-05-25 FR FR1654685A patent/FR3051785A1/en active Pending
-
2017
- 2017-05-24 KR KR1020187037431A patent/KR102457258B1/en active IP Right Grant
- 2017-05-24 WO PCT/FR2017/051291 patent/WO2017203174A1/en unknown
- 2017-05-24 US US16/304,063 patent/US11744153B2/en active Active
- 2017-05-24 SG SG11201810354TA patent/SG11201810354TA/en unknown
- 2017-05-24 EP EP17732504.0A patent/EP3465788B1/en active Active
- 2017-05-24 JP JP2018561685A patent/JP6929880B2/en active Active
- 2017-05-24 CN CN201780032163.XA patent/CN109690798B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109690798A (en) | 2019-04-26 |
| EP3465788B1 (en) | 2020-05-20 |
| FR3051785A1 (en) | 2017-12-01 |
| CN109690798B (en) | 2023-04-28 |
| US11744153B2 (en) | 2023-08-29 |
| US20200259069A1 (en) | 2020-08-13 |
| KR20190013899A (en) | 2019-02-11 |
| EP3465788A1 (en) | 2019-04-10 |
| JP6929880B2 (en) | 2021-09-01 |
| KR102457258B1 (en) | 2022-10-20 |
| WO2017203174A1 (en) | 2017-11-30 |
| JP2019523743A (en) | 2019-08-29 |
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