SG11201804855SA - Methods and apparatus for processing a substrate - Google Patents
Methods and apparatus for processing a substrateInfo
- Publication number
- SG11201804855SA SG11201804855SA SG11201804855SA SG11201804855SA SG11201804855SA SG 11201804855S A SG11201804855S A SG 11201804855SA SG 11201804855S A SG11201804855S A SG 11201804855SA SG 11201804855S A SG11201804855S A SG 11201804855SA SG 11201804855S A SG11201804855S A SG 11201804855SA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- substrate
- california
- pct
- shield
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 5
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/082—Oxides of alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/975,793 US10431440B2 (en) | 2015-12-20 | 2015-12-20 | Methods and apparatus for processing a substrate |
PCT/US2016/066080 WO2017112439A1 (fr) | 2015-12-20 | 2016-12-12 | Procédés et appareil de traitement d'un substrat |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201804855SA true SG11201804855SA (en) | 2018-07-30 |
Family
ID=59066539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201804855SA SG11201804855SA (en) | 2015-12-20 | 2016-12-12 | Methods and apparatus for processing a substrate |
Country Status (8)
Country | Link |
---|---|
US (1) | US10431440B2 (fr) |
EP (1) | EP3391406A4 (fr) |
JP (1) | JP7066626B2 (fr) |
KR (1) | KR102663848B1 (fr) |
CN (1) | CN108604533B (fr) |
SG (1) | SG11201804855SA (fr) |
TW (1) | TWI778947B (fr) |
WO (1) | WO2017112439A1 (fr) |
Families Citing this family (42)
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---|---|---|---|---|
TWI774375B (zh) | 2016-07-27 | 2022-08-11 | 美商應用材料股份有限公司 | 具多層吸收劑的極紫外遮罩坯料及製造方法 |
US11011357B2 (en) * | 2017-02-21 | 2021-05-18 | Applied Materials, Inc. | Methods and apparatus for multi-cathode substrate processing |
JP7001448B2 (ja) * | 2017-12-05 | 2022-01-19 | 東京エレクトロン株式会社 | Pvd処理方法およびpvd処理装置 |
US10815561B2 (en) | 2018-03-10 | 2020-10-27 | Applied Materials, Inc. | Method and apparatus for asymmetric selective physical vapor deposition |
WO2019178223A1 (fr) * | 2018-03-14 | 2019-09-19 | Applied Materials, Inc. | Procédé et appareil de formation de structures par dépôt physique en phase vapeur sélective symétrique |
US11275300B2 (en) | 2018-07-06 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask blank defect reduction |
TW202026770A (zh) | 2018-10-26 | 2020-07-16 | 美商應用材料股份有限公司 | 用於極紫外線掩模吸收劑的ta-cu合金材料 |
CN109735822B (zh) * | 2018-11-14 | 2021-04-09 | 北京北方华创微电子装备有限公司 | 反应腔室和半导体设备 |
US10927450B2 (en) | 2018-12-19 | 2021-02-23 | Applied Materials, Inc. | Methods and apparatus for patterning substrates using asymmetric physical vapor deposition |
US11194244B2 (en) | 2018-12-21 | 2021-12-07 | Applied Materials, Inc. | Extreme ultraviolet mask absorber and processes for manufacture |
US11249390B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
TW202035792A (zh) | 2019-01-31 | 2020-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收體材料 |
TWI828843B (zh) | 2019-01-31 | 2024-01-11 | 美商應用材料股份有限公司 | 極紫外線(euv)遮罩素材及其製造方法 |
TWI818151B (zh) * | 2019-03-01 | 2023-10-11 | 美商應用材料股份有限公司 | 物理氣相沉積腔室及其操作方法 |
TW202043905A (zh) | 2019-03-01 | 2020-12-01 | 美商應用材料股份有限公司 | 物理氣相沉積系統與處理 |
US11639544B2 (en) * | 2019-03-01 | 2023-05-02 | Applied Materials, Inc. | Physical vapor deposition system and processes |
US11327394B2 (en) | 2019-04-19 | 2022-05-10 | Applied Materials Inc. | Graded interface in bragg reflector |
TWI836073B (zh) | 2019-05-22 | 2024-03-21 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體及其製造方法 |
US11275304B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber matertals |
TW202104666A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
TW202104667A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
TWI836072B (zh) | 2019-05-22 | 2024-03-21 | 美商應用材料股份有限公司 | 具有嵌入吸收層之極紫外光遮罩 |
US11385536B2 (en) | 2019-08-08 | 2022-07-12 | Applied Materials, Inc. | EUV mask blanks and methods of manufacture |
KR102077976B1 (ko) * | 2019-10-15 | 2020-02-14 | 주식회사 기가레인 | 어댑터 및 이를 포함하는 플라즈마 처리 장치 |
TW202122909A (zh) * | 2019-10-25 | 2021-06-16 | 美商應用材料股份有限公司 | 減少極紫外遮罩毛坯缺陷之方法 |
US11630385B2 (en) | 2020-01-24 | 2023-04-18 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
TW202131087A (zh) | 2020-01-27 | 2021-08-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
TW202129401A (zh) | 2020-01-27 | 2021-08-01 | 美商應用材料股份有限公司 | 極紫外線遮罩坯體硬遮罩材料 |
TWI817073B (zh) | 2020-01-27 | 2023-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體硬遮罩材料 |
US11615958B2 (en) | 2020-03-24 | 2023-03-28 | Tokyo Electron Limited | Methods to reduce microbridge defects in EUV patterning for microelectronic workpieces |
TW202141165A (zh) | 2020-03-27 | 2021-11-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
TWI836207B (zh) | 2020-04-17 | 2024-03-21 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
US11300871B2 (en) | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11227751B1 (en) * | 2020-07-01 | 2022-01-18 | Applied Materials, Inc. | Plasma chamber target for reducing defects in workpiece during dielectric sputtering |
US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11513437B2 (en) | 2021-01-11 | 2022-11-29 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11592738B2 (en) | 2021-01-28 | 2023-02-28 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11578402B2 (en) * | 2021-05-26 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Film forming apparatus and method for reducing arcing |
US11762278B2 (en) | 2021-06-16 | 2023-09-19 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflectors |
US11815803B2 (en) | 2021-08-30 | 2023-11-14 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflector materials |
CN117881813A (zh) | 2021-08-31 | 2024-04-12 | 佳能安内华股份有限公司 | 溅镀装置及膜形成方法 |
US11782337B2 (en) | 2021-09-09 | 2023-10-10 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflectors |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3864239A (en) * | 1974-04-22 | 1975-02-04 | Nasa | Multitarget sequential sputtering apparatus |
US4952295A (en) * | 1988-04-15 | 1990-08-28 | Matsushita Electric Industrial Co., Ltd. | Method of producing a deposition film of composite material |
DE4109018C2 (de) * | 1991-03-20 | 2002-02-28 | Unaxis Deutschland Holding | Vorrichtung zum Beschichten eines Substrats |
JPH05171436A (ja) * | 1991-12-19 | 1993-07-09 | Sony Corp | マグネトロンスパッタリング装置 |
JPH05179438A (ja) | 1991-12-28 | 1993-07-20 | Sumitomo Metal Ind Ltd | スパッタ装置 |
US5914018A (en) * | 1996-08-23 | 1999-06-22 | Applied Materials, Inc. | Sputter target for eliminating redeposition on the target sidewall |
AU6977998A (en) * | 1997-04-21 | 1998-11-13 | Tokyo Electron Arizona, Inc. | Method and apparatus for ionized sputtering of materials |
JPH11302841A (ja) * | 1998-04-24 | 1999-11-02 | Victor Co Of Japan Ltd | スパッタ装置 |
US6051113A (en) * | 1998-04-27 | 2000-04-18 | Cvc Products, Inc. | Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing |
JP4510959B2 (ja) | 1999-10-07 | 2010-07-28 | キヤノンアネルバ株式会社 | 反応性スパッタリング装置 |
JP4437290B2 (ja) | 2003-05-14 | 2010-03-24 | シーワイジー技術研究所株式会社 | スパッタ装置 |
JP2010226136A (ja) * | 2004-08-31 | 2010-10-07 | Tokyo Univ Of Agriculture & Technology | 半導体薄膜製造方法 |
GB2425780B (en) | 2005-04-27 | 2007-09-05 | Univ Sheffield Hallam | PVD coated substrate |
DE102005033769B4 (de) | 2005-07-15 | 2009-10-22 | Systec System- Und Anlagentechnik Gmbh & Co.Kg | Verfahren und Vorrichtung zur Mehrkathoden-PVD-Beschichtung und Substrat mit PVD-Beschichtung |
JP4755475B2 (ja) | 2005-10-06 | 2011-08-24 | 株式会社昭和真空 | スパッタ装置 |
US7815782B2 (en) | 2006-06-23 | 2010-10-19 | Applied Materials, Inc. | PVD target |
JP2008063637A (ja) | 2006-09-11 | 2008-03-21 | Canon Inc | 成膜方法 |
US8679301B2 (en) * | 2007-08-01 | 2014-03-25 | HGST Netherlands B.V. | Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting |
WO2009044473A1 (fr) | 2007-10-04 | 2009-04-09 | Canon Anelva Corporation | Dispositif de pulvérisation haute fréquence |
JP5190316B2 (ja) * | 2007-10-04 | 2013-04-24 | キヤノンアネルバ株式会社 | 高周波スパッタリング装置 |
KR102134276B1 (ko) * | 2008-04-16 | 2020-07-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 프로세싱 증착 차폐 컴포넌트들 |
WO2010073711A1 (fr) | 2008-12-26 | 2010-07-01 | キヤノンアネルバ株式会社 | Dispositif de pulvérisation, procédé de pulvérisation et procédé de fabrication de dispositif électronique |
WO2011026129A2 (fr) | 2009-08-31 | 2011-03-03 | Lam Research Corporation | Agencements de retour par la terre pour radiofréquence (rf) |
JP5563377B2 (ja) | 2009-12-22 | 2014-07-30 | キヤノンアネルバ株式会社 | スパッタリング装置 |
JP2011168828A (ja) | 2010-02-17 | 2011-09-01 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
WO2011122411A1 (fr) * | 2010-03-29 | 2011-10-06 | 株式会社 アルバック | Dispositif de pulvérisation |
US8795487B2 (en) * | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power |
US9834840B2 (en) * | 2010-05-14 | 2017-12-05 | Applied Materials, Inc. | Process kit shield for improved particle reduction |
TW201224185A (en) * | 2010-09-10 | 2012-06-16 | Ulvac Inc | Sputtering apparatus |
JP2012149339A (ja) * | 2010-12-28 | 2012-08-09 | Canon Anelva Corp | スパッタリング装置、及び電子デバイスの製造方法 |
CN103635603B (zh) * | 2011-09-09 | 2016-04-13 | 佳能安内华股份有限公司 | 成膜装置 |
CN104169456B (zh) * | 2012-03-14 | 2016-06-08 | 佳能安内华股份有限公司 | 溅镀装置 |
US20150259788A1 (en) | 2014-03-13 | 2015-09-17 | Makoto Nagamine | Sputtering apparatus and manufacturing method of magnetoresistive element |
US11183375B2 (en) | 2014-03-31 | 2021-11-23 | Applied Materials, Inc. | Deposition system with multi-cathode and method of manufacture thereof |
-
2015
- 2015-12-20 US US14/975,793 patent/US10431440B2/en active Active
-
2016
- 2016-12-12 EP EP16879880.9A patent/EP3391406A4/fr not_active Withdrawn
- 2016-12-12 WO PCT/US2016/066080 patent/WO2017112439A1/fr active Application Filing
- 2016-12-12 CN CN201680074710.6A patent/CN108604533B/zh active Active
- 2016-12-12 KR KR1020187020862A patent/KR102663848B1/ko active IP Right Grant
- 2016-12-12 SG SG11201804855SA patent/SG11201804855SA/en unknown
- 2016-12-12 JP JP2018550653A patent/JP7066626B2/ja active Active
- 2016-12-16 TW TW105141667A patent/TWI778947B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN108604533A (zh) | 2018-09-28 |
KR102663848B1 (ko) | 2024-05-03 |
US10431440B2 (en) | 2019-10-01 |
JP2019502030A (ja) | 2019-01-24 |
WO2017112439A1 (fr) | 2017-06-29 |
CN108604533B (zh) | 2023-08-15 |
TWI778947B (zh) | 2022-10-01 |
JP7066626B2 (ja) | 2022-05-13 |
EP3391406A1 (fr) | 2018-10-24 |
EP3391406A4 (fr) | 2019-07-24 |
KR20180087449A (ko) | 2018-08-01 |
US20170178877A1 (en) | 2017-06-22 |
TW201732063A (zh) | 2017-09-16 |
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