TW201224185A - Sputtering apparatus - Google Patents

Abstract

A sputtering apparatus (1) for forming a thin film on a substrate (S) disposed in a film-forming space (2S) is provided with: a plurality of targets (13A to 13C); and shutter mechanisms (M) which are disposed between the targets (13A to 13C) and the film-forming space (2S) and have openings (22) that expose a selected target to the film-forming space (2S). The shutter mechanisms (M) are provided with injection control units (30A to 30C) that control the number of sputtering particles released from the selected target toward a substrate outer peripheral section (S2). The plurality of injection control units have a plurality of shielding levels with respect to the sputtering particles. An injection control unit that is suitable for the selected target is used from among the plurality of injection control units in accordance with the film thickness distribution when the selected target that is exposed to the film-forming space (2S) is individually sputtered.

Description

201224185 VI. Description of the Invention: [Technical Field of the Invention] The present invention is widely used in a manufacturing process of a 2-body f-set, a magnetic device, etc., in a prior art technique. In the sputtering target, the main surface of the plating surface is formed by depositing the sputtered particles released from the target on the substrate and the surface to form a film. A film composed of a compound or the like is developed with a plurality of cathode sputtering devices. The targets are respectively disposed in a plurality of cathodes of a plurality of sputtering sputterings. * Generally speaking, this phase is recorded with the substrate; Since the distance is fixed, the sputtered surface of each target is provided so as to be inclined with respect to the surface of the substrate on which the film formation object is formed. When the sputtered surface of the target is inclined with respect to the surface of the substrate, the surface of the substrate is generated and splashed. The relative distance between the plating surface is short, and the relative distance from the sputtered surface is long. In the normal situation, the cesium clock particle is incident on the substrate in a relatively short distance from the hidden key surface. Surface The number of particles will increase relatively. In the region where the relative distance from the sputtering is long, the number of particles that are scattered to the periphery of the substrate increases due to the amount of sputtered particles scattered around the substrate. Therefore, the number of particles is relatively small. In other words, the film thickness of the film formed by the multi-component sputtering device is dispersed. Specifically, in the same surface of the film, there is a region where the relative distance from the sputtered surface is short, and the film thickness is small. In the region where the distance from the sputtered surface is longer than 201224185, the film thickness tends to be small. The countermeasure against the problem of uneven film thickness distribution is proposed from the rotation axis of the rotating substrate to the substrate. The ratio of the distance from the outer peripheral edge portion, the distance from the rotation axis to the center point of the cathode (dry) surface, and the distance from the substrate surface to the center point of the cathode surface is regarded as a specific range (see Patent Document 1). [Patent Document 1] [Patent Document 1] International Publication No. 2006/077837 However, even in the case where sputtering is performed under the same film formation conditions, the film thickness distribution of the film formed on the substrate may be The target material, instead of the fifteenth figure, shows three dry feeds made of different materials: the thickness distribution on the sputtering, the vertical axis represents the film thickness, and the horizontal axis represents the separation from the substrate. For example, in material 1 and material 2, With the thickness of the substrate at the center of the substrate, the thickness of the film is approximately == the position of the film becomes smaller, and the thickness of the film becomes smaller; the problem can be seen; the problem; the cardiac change p L can be seen in the material 3 ' If the substrate is large, it will be separated from the center of the substrate, and the film thickness will change to a fixed value when the distance between the right and the center of the substrate reaches a fixed value. The thickness of the film is small. - The film thickness distribution in the surface: It is greatly different. In the case of using the previous bribe = _ (4) film (10) thick distribution, the thin material will become uneven when the film is formed by using different materials at the same time. The film in the same layer is also different in the (four) direction. For example, suppose the substrate rides on the top of the curve of material 3 of the fifteenth 201224185 figure. The plating device will count the conditions of the materials 2 and 3. The thickness of the splash is used, so the thicker the film is formed at i:L. In addition, there is a limit in the vicinity of the heart, and it is lower in the vicinity of the heart. It is lower in the vicinity of the center, and the ratio of the material is 3, and the ratio of the material is changed, and the condition is changed. The film quality, in the film thickness [invention content] key Shanghai, that is, the above problem point 'the purpose is to provide a variety of conditions of the composition of the extinction = liter = two materials, but also the uniformity of the thin film r. In the film-forming empty door; >5 φ eight kinds of '贱 贱 襞 , , , , , , , , , , , , , 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 臈 臈 臈 臈 臈 臈 臈 臈: the aforementioned contribution of the empty film formation space is applied to the description control unit, and the selection is determined to be suitable for the selection of the dry input according to the structure, and the plurality of incident control portions correspond to the film formation void 201224185 In the case where the thickness distribution of the incident control unit is set to be equal to each other, even if the film thickness distribution of the dry monomer is different from each other, the distribution of the number of particles can be recorded in each surface. $ = film thickness of the formed film (four) uniformity, and can be composed of film In a preferred embodiment, the plurality of incident control units, the height of the wall portion disposed outside the target, has a difference = according to the structure, the incident control portion can be made by the wall portion having a different height The degree of shielding is different. Therefore, the complexity is complicated, and the force is required to set or form a film step. = Gui:: Control a plurality of incident control cycles. _: The outer opening can expose the sputtered surface of the target. And the incident == package == is configured with the incident control portion, and the hole 2 is composed of the opening portion of the incident = control: facing each other, the film thickness and the composition of the composition can be achieved. In the case of the incident right μ·two car ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The imaginary opening portion σ of the door is selectively exposed to the front surface; the 201224185 and the second gate are disposed at a position closer to the substrate than the first gate, and have the plurality of incident control portions It is suitable for the selection control unit of the selection target selectively exposed by the first shutter to face the selection. According to this configuration, the target is selectively exposed by the first gate, and the second gate makes the incident control portion suitable for the exposed target face to the handle. Therefore, even if the drying is selectively exposed, since the irradiation control portion suitable for the drying can be applied, the degree of freedom of the film forming step is not hindered, and the film thickness and composition can be made uniform. In a preferred embodiment, the incident control unit having a relatively large shielding degree has a wall portion that prevents the release from the sputtered surface of the selective target and proceeds to the outer peripheral portion of the substrate. Sputtered particles. The selection target is a material such that the film formed at the time of sputtering of the target monomer has a larger film thickness at the outer peripheral portion of the substrate than at the central portion of the substrate. In this case, the aforementioned relatively large shielding degree is applied to the selected target. Incidence control unit. According to this configuration, the selection target is a material such that the film formed when the target monomer is sputtered has a larger film thickness at the outer peripheral portion of the substrate than at the central portion of the substrate, and in this case, by the selection target The human radiation control unit 'having a relatively large degree of shielding' shields the sputtered particles released from the dry bribed surface and toward the outer peripheral surface of the substrate. Therefore, the film-forming step is not complicated, and the degree of shielding can be made different, and the thickness and composition of the film can be made uniform. In one example, the shutter mechanism includes a dome-shaped member rotatable in the film forming apparatus, and the plurality of individual shot control 201224185 includes a first incident control unit including a first opening and is formed The first cover portion surrounds the first opening portion, the first shielding portion protrudes from the dome-shaped member toward the substrate only at a first height; and the second incident control portion includes a first cover portion a second opening portion that is not surrounded by a shielding portion that protrudes toward the substrate, is formed in the dome-shaped member, and the sputtering device further includes a driving motor that rotates the dome-shaped member, and the driving The motor rotates the dome-shaped member so that the selection target is exposed through the opening selected in accordance with the material of the selection target in the opening of the plurality of incident control portions. According to this configuration, the degree of shielding can be switched by the action of the drive motor. In one example, the plurality of incident control units further include a third incident control unit including: a third opening formed in the dome-shaped member; and a second shielding portion surrounding the first The three opening portions protrude from the dome-shaped member toward the substrate at a second height different from the first height. According to this configuration, the type of the selection target can be increased correspondingly. In one example, the first shielding portion is an annular wall portion surrounding the first opening portion. According to this configuration, a plurality of shielding degrees can be imparted to the shutter mechanism (e.g., the second gate) with a simple configuration. [Embodiment] [First Embodiment] 201224185 Hereinafter, a sputtering apparatus according to a first embodiment of the present invention will be described based on the first to eleventh drawings. The antimony ore device 1 is a magnetron _ (magnet surface sputtering) device. The chamber 2 having an internal space, i.e., an m-space 2S, includes, for example, a chamber body 2a having a bottomed cylindrical shape and an upper wall portion 2b for sealing the inside of the chamber body to a vacuum state. The chamber body 2a is connected to the exhaust mechanism 3 composed of a vacuum pump via an exhaust port 2d formed in the bottom wall portion 2c or the like. A gas introduction port 2e for guiding a sputtering gas is formed in the chamber body 2a', and a gas supply mechanism 9 is connected to the gas introduction port 2e, and the gas supply mechanism 9 is a mass flow controller (massfl〇w controller) ) and other components. The gas supply mechanism 9 controls the flow rate of gas such as argon (Ar), nitrogen (Kr), or xenon (Xe) via the gas introduction port 2e, and introduces it into the chamber body 2a. Further, as the sputtering gas, a reaction gas containing a reaction gas such as nitrogen or carbon monoxide may be used. In the chamber 2, a substrate S such as a ruthenium substrate or a glass substrate is carried through a transfer port (not shown). The substrate S is placed on the substrate position of the rotary substrate holder 4 provided in the chamber 2. The substrate loss 4 is formed in a disk shape, and the drive motor 6 is connected to the bottom surface via the drive shaft 5 and the transmission mechanism 7. The drive shaft 5 of the drive motor 6 is rotatably supported by the bottom wall portion 2c of the chamber 2. When the drive motor is rotated, the rotation is transmitted to the drive shaft 5 via the transmission mechanism 7, and the substrate holder 4 is rotated in the same direction as the rotation direction of the drive motor 6. When the sputtering motor is executed, the substrate motor 4 rotates, and the deviation of the chipping particles deposited on the substrate S placed on the substrate holder 4 is suppressed. 201224185 Inside the chamber 2, a plurality of anti-adhesion plates 8 are provided, and the anti-adhesion plate 8 covers the outer peripheral surface of the substrate holder 4 or the inner wall of the chamber body 2a. The adhesion preventing plate 8 prevents the splash particles from adhering to the outer peripheral surface of the substrate holder 4 - the inner wall of the body 2a. ° s 2 to In the upper wall portion 2b of the chamber 2, a plurality of (three in the illustrated example) cathodes (cath〇de) 1〇 are fixed in a tiltable manner. The second graph shows the cathode 1 被 fixed to the upper wall portion 2b. As shown in the second figure, in the embodiment, the first cathode 10A, the second cathode 10B, and the third cathode 1 are fixed in the circumferential direction by an angle 〇 (= 12 〇.).

As shown in the first figure, each cathode 10 has a flat-shaped backing plate n. A ground shield 12 is provided on the bottom surface of the backing plate, that is, the surface on the substrate side. The ground barrier 12 has a disk-shaped target receiving portion 12a for receiving the target 13 and an annular, convex portion 12b. The annular convex portion i2b is formed to surround the accommodating portion 12a. For example, the thickness of the annular convex portion i2b is about several mm. η X Each of the back plates 11 is connected to the corresponding external power source G, and DC or AC from the external power source G is used. The electric power is supplied to the target 13 accommodated in the (four) g portion 12a. a The target accommodating portion 12a of each of the barriers 12 is provided on the bottom surface of each of the back plates 11. The target 13 is not particularly limited, and is made of metal iridium. The composition of the three cathodes 1 is different from each other. In the present embodiment, the first cathode 1 is fixed to the first target composed of the recording (Ni). 13A, at the second cathode 1〇B, solid, having a second target 13B composed of cobalt (Co), and at the third cathode 1〇 (:, the third dry 13C composed of oxidized town (Mg〇) 201224185 is fixed on the surface of the substrate 13 of each cathode 10, that is, the surface of the substrate s is inclined by the splash surface 13a'. The straight line from the center of the target 13 toward the farthest position in the edge of the substrate S is at an angle of 〇 to 30. or less. In the present embodiment, the normal to the sputtered surface l3a is called the dry axis. X1 'The angle formed by the target axis XI and the central axis X2 passing through the normal line (substrate center) of the surface si of the substrate s is the inclination angle of the target 13. As shown in the second figure, the first-third target 13A to 13C The center points PC1 to PC3 of the first to third targets 13A to 13C are located on the same circumference. The *--third targets 13A to 13C are arranged at an angle α = 12 周 in the circumferential direction. Further, in the present embodiment, the first stem 13 is disposed on the front surface of the chamber 2, the second stem is disposed on the left side as viewed from the front of the chamber 2, and the third stem 13C is disposed on the right side. Each of the cathodes 10 is provided with a magnetic gas device 14 at a position opposite to the dry plate 13 by the back plate 11. Each of the magnetic devices 14 is provided with a magnetic circuit 15. The electric power from the external power source G is supplied to the backing plate 11, When the magnetic circuit 15 is driven, a magnetron magnetic field is generated at the beryllium surface 13a of the target 13. Then 'hunting The generated magnetron magnetic field contributes to the electric beam in the vicinity of the sputter surface 13a, and the plasma is densified, and the deplating surface 13a is plated with the ion enthalpy of the forged gas. In the upper wall portion of the chamber 2 2t>, there is a gate mechanism Μ. The gate mechanism Μ has a first gate 20 and a second gate 30. As shown in the third figure, the gates 20, 30 are arranged coaxially along the central axis 。 4. From the chamber 2 When viewed from above, the gates 20, 30 are overlapped. The second gate is provided below (inside) the first gate 20 ° c 11 201224185 As shown in the third figure, the first gate 20 has a substantially hemispherical shape or circle In the lid-shaped shutter body 21, the shutter body 21 has a crotch portion 21a on its outer periphery. In the shutter body 21, the two opening portions 22 are formed to penetrate. Each of the openings 22 is a hole for exposing the target 13 to the film formation space 2S, and the shape of the target 13 is formed into a circular shape, and the inner diameter thereof is formed to be slightly larger than the diameter of the stem 13. The fourth figure shows the lower surface 20a of the first shutter 20. The opening portion 22 is formed between the apex PC4 of the shutter body 21 and the weir portion 21a. The opening portion 22 is provided only at an angle α in the circumferential direction of the shutter body 21. In other words, the angle α between the straight line connecting the center point PC5 of one opening 22 and the vertex PC4 of the first shutter 20 to the straight line connecting the center point PC6 of the other opening portion 22 to the vertex PC4 is 120. . Further, the center point PC5 of one opening portion 22 is located on the front surface of the chamber 2, and the state in which the other opening portion 22 is located on the right side as viewed from the front side of the chamber 2 is referred to as the reference position of the first shutter 20. As described above, the first shutter 13 disposed at the reference position exposes the first target 13A disposed on the front side of the chamber 2 and the third target 13C disposed on the right side as viewed from the front side in the film forming space 2S. This first gate 20 is rotatable inside the chamber 2. As shown in the first figure, the first shutter 20 is coupled to the drive shaft 24 of the drive motor 23 via the communication mechanism 25. This drive shaft 24 is supported to be rotatable in the upper wall portion 2b of the chamber 2. A transmission mechanism 25 provided between the drive shaft 24 and the first shutter 20 transmits the rotation of the drive shaft 24 to the first shutter 20. Although the configuration of the communication mechanism 25 is not particularly limited, for example, it is configured to have a drive source such as a motor, a gear, a ratchet, etc., 12 201224185 to switch the rotation of the drive shaft 24 to the first gate 2〇. The communication mode is a non-communication mode in which the rotation of the drive shaft 24 is not transmitted to the first gate 2〇. When the drive motor 23 is driven to rotate the first shutter 20, the respective opening portions 22 are moved on the annular track R1 having the same width as the diameter of the opening portion 22 as shown in Fig. 4 . As shown in the second figure, each stem 13 is included in this track R1. Therefore, when the first shutter 20 is rotated by 120° from the reference position, the opening portion 22 of the first shutter 20 overlaps with the position of two of the three stems 13 respectively, and the two targets 13 facing the opening portions 22 are respectively It is selectively exposed to the film forming space 2S. At this time, one of the three targets 13 is shielded at the first gate 20 and is not exposed to the film forming space 2S. Next, the second gate 30 will be described. As shown in the third figure, the second shutter 30 has a substantially hemispherical shape or a dome-shaped shutter body 31 as in the first gate 20, and the shutter body 31 has a preparation portion 31a at the lower end. The shutter body 31 is formed to be almost the same size as the shutter body 21 of the first gate 2〇. In this gate body 31, there is a __third entry

The radiation control units 30A to 30C' first-third incidence control units 30A to 30C control the number of sputtered particles released from the target 13 toward the outer peripheral portion of the substrate. The fifth figure shows the lower side 3〇a of the second shutter 30. The incident control units 30A to 30C have openings 33 to 35 that penetrate the shutter body 31, respectively. Each of the openings 33 to 35 is a hole for exposing the target 13 of the first gate 2 to the film formation space 2S, and the target portion 22 of the first gate 2 is matched with the target 13 The shape is formed into a circular shape whose inner diameter is formed to be slightly larger than the diameter of the stem 13.

S 13 201224185 The opening portions 33 to 35 are formed between the vertex PC8 of the shutter body 31 and the flange portion 31a. The openings 33 to 35 are provided at equal intervals in the circumferential direction of the shutter body 31 at intervals of α. In other words, of the straight lines connecting the center points PC9 to PC11 of the openings 33 to 35 to the apex PC8 of the shutter body 31, the adjacent straight lines form an angle α of 120°. The incident control units 30A to 30C correspond to the height of the barrier portion of the wall portion and have different shielding degrees, and the wall portions are provided outside the openings 33 to 35. For example, the first incident control unit 30 includes the first barrier portion 36 on the outer circumference of the opening 33. The first barrier portion 36 is an annular wall portion that surrounds the opening portion 33. The lower surface 36u of the first barrier portion 36 separates the opening 36A. As shown in the third figure, the first barrier portion 36 has a height, i.e., a first screen length. Further, although the first barrier length H1 is not particularly limited, it is preferably 50 to 120 mm. Since the height of the barrier portion 36 of the first incident control portion 30A is the highest among the incident control portions 30A to 30C, the degree of shielding of the first incident control portion 30A is also the largest. The second incident control unit 30B is constituted only by the opening 34. Unlike the first incident control unit 30A, the second incident control unit 30B does not include an annular wall portion that protrudes toward the substrate S on the outer circumference of the opening 34. In other words, the height of the wall portion on the outer circumference of the opening portion 34 of the second incident control portion 30B is "zero." Therefore, the degree of shielding of the second incident control unit 30B is the smallest among the incident control units 30A to 30C. The third incident control unit 30C includes a second barrier portion 37 on the outer circumference of the opening 35. The second barrier portion 37 is an annular wall portion that surrounds the opening portion 35. The lower surface 37u of the second barrier portion 37 separates the opening 37P. This second 14 201224185 barrier portion 37 has a height, that is, a second barrier length H2. The second barrier length H2 is shorter than the first barrier length H1. The second barrier length H2 is in the above range of 50 to 120 mm and is shorter than the first barrier length H1. The third incident control unit 30C has a larger degree of shielding than the first incident control unit 30A. This second gate 30 can also rotate inside the chamber 2 as shown in the first figure. The second gate 30 is connected to the drive motor 25 via the communication mechanism 25 to become the center axis X4 of the second shutter 30 (refer to the third drawing) in accordance with the center line of the drive shaft 24 of the drive motor 23. The second shutter 30 is rotated in the same direction as the rotational direction of the drive motor 23. When the drive motor 23 is driven to rotate the second shutter 30, as shown in FIG. 5, the openings 33 to 35 of the incident control portions 30A to 30C have rings having the same width as the diameter of the openings 33 to 35. Move on the trajectory R2. As shown in the second figure, the position of each stem 13 is included in this trace R2. Therefore, when two of the openings 13 to 35 selectively exposed by the first shutter 20 are stopped to coincide with the position of the opening 22 of the first shutter 20, The two targets 13 become exposed to the film forming space 2S via the first gate 20 and the second gate 30. Further, by rotating the second shutter 30 by 120° each time, the barrier portion 36, 37 or the opening portion 34 facing the exposed target 13 can be changed. The first barrier portion 36 is located on the front surface of the chamber 2. The state is referred to as the reference position of the second gate 30. When the first shutter 20 and the second shutter 30 are respectively disposed at the reference position, the first target 13A exposed through the opening portion 22 of the first shutter 20 faces the first barrier portion 36. Further, the third target 13C exposed through the opening portion 22 faces the second 201224185 barrier portion 37. Next, the actions of the incident control units 30A to 30C will be described based on the sixth to the human figures. The sixth diagram shows the state in which the stem 13 faces the first incident control portion 30A of the second gate 3A via the opening portion 22' of the first door 20. The stem 13 is exposed to the film forming space via the opening portion 22 of the first door 2〇 and the opening portion 33 of the second gate H30. When the rhyme is performed, the surface of the handle 13 is released toward the substrate s Bribe particles. (4) The portion - of the ship particle that is placed toward the substrate phase portion is shielded by the first barrier portion 36. Therefore, the first barrier portion 36' reduces the number of particles deposited on the outer peripheral portion of the substrate as compared with the case where the first barrier 36 is not provided, and the film thickness at the outer peripheral portion of the substrate is reduced. Specifically, for example, from the peripheral portion of the target 13, the particles released from the reference point pu which is relatively far from the central axis X2 of the center of the substrate and directed toward the substrate S are traced SP1, as indicated by the dotted line at the two points in the figure. A barrier portion 36 is unobstructed. Further, the particle displacing sp2 released from the reference point Pk2 located at the center portion of the target 13 and directed toward the substrate s is not blocked by the first barrier portion 36. On the other hand, a part of the particle track SP3' which is released from Pk3 which is relatively close to the central axis X2 of the center of the substrate and which is directed toward the substrate s is shielded by the first barrier portion 36 from the peripheral portion of the target 13. That is, if the reference point Pk3 is used as the starting point, the line L1 that reaches the surface S1 of the substrate S at the shortest distance after approaching the lower surface 36u of the first barrier portion 36 is formed at an angle of incidence with the surface S1. Inl, the splash particles incident at an angle smaller than the incident angle (9 ini are blocked by the first barrier portion 36. Therefore, the 201224185 mineral particles released at an angle smaller than the incident angle of 0 ini does not accumulate in On the substrate s', the film thickness of the ship to the previous voyage is smaller than that of the state without the barrier. This area is from the reference point pk3 and is the center axis X2 of the substrate. The outer peripheral portion S2 of the other side of the substrate. Further, the width of the outer peripheral portion S2 of the substrate is reduced by the thickness of the barrier portion 36. Further, in the present embodiment, the antimony ore discharged to the surface of the substrate is released from the reference points pk1 and pk2. The particle 'may not be covered by the first barrier portion'. The first barrier portion 36 may be configured such that the seventh figure indicates that the stem 13 is facing the first gate 30 via the mouth portion 22' of the first idle door 2' The third incident control unit 3〇c is green. The target 13 is via the first gate 2 The opening portion 22 of the 0 and the opening portion 35 of the first portion are exposed to the film forming space 2S. The sputtering is released from the sputtered surface 13a of the target 13 toward the substrate s. The released sputter particles In some of the particles, the flight of a part of the particles toward the outer peripheral portion S2 of the substrate is blocked by the first barrier portion 37. The second barrier portion 37 reduces the amount of particles deposited on the outer peripheral portion S2 of the substrate compared to the case where the second barrier portion 37 is not provided. The film thickness at the base S2 is made small. However, since the high sound of the second barrier portion 37 is lower than the barrier portion 36, the outer peripheral portion S 2 of the substrate which is generated by the second barrier portion 37 is small. The width is smaller than that of the first barrier portion 3 6 : ^. Specifically, in the sputtered surface i3a of the stem 13, the sputtered particles released from the upper quasi-points Pk1, Pk2 and directed toward the substrate s ^ The two SP1, SP2' are not obscured by the second barrier portion 37. On the other hand, the particle trajectory released from the above reference point Pk3 and going toward the substrate s

S 17 201224185 The boring tool is shielded by the second barrier portion 37. That is to say, if the ground quasi black is used as the starting point, the angle L2 with the surface si at the shortest distance_to the surface si of the substrate s is approached to the incident angle after approaching the lower surface 37u of the second barrier portion 37. ^ in2, the splashed particles incident at an angle of the incident angle 2 1 will be released by the second barrier portion from the reference point Pk3 at an angle smaller than the incident angle θ μ; The _ is on the substrate s, so that the rain reaches the predetermined outer peripheral portion of the substrate, and the thickness of the substrate becomes smaller than in the case where the barrier is not present. Further, the width 'the width of the outer peripheral portion 基板 of the substrate whose thickness is reduced by the first barrier portion 37 is smaller than the width AW1 of the outer peripheral portion S2 of the substrate in the state of the first barrier portion 36. Further, the above incident angle is smaller than the incident angle of 0in1 in the state of the first barrier portion 36. The eighth diagram shows that the stem 13 passes through the opening 22 of the first gate 2 () and faces the second human radiation control portion of the second gate H 3G. In this case, since there is no barrier portion surrounding the opening portion 34, the grading particles "toward the surface S1 of the substrate s from the reference points Pkj to Pk3 are not shielded by the second incident portion 30B. Therefore, the plated particles released from the handle 13 of the face portion 34 are deposited on the substrate with almost the same film thickness distribution in a state where the plated particles are not sputtered in the second state. Next, the arrangement pattern (rotational position) of one gate 20 and the second gate 30 will be described based on the ninth to eleventh drawings. Fig. 9 to Fig. 10 are diagrams showing the state of the second gate 20122185 30 when the first gate 2〇 and the second gate gate 3 are overlapped in the state of the handle 13. In the ninth (a)th to ninth (c)th drawings, the first shutter 20 is disposed at the reference position. In this case, the opening portion 22 of the first shutter 20 faces the first target 13A and the third target 13C, respectively. Therefore, the first target 13A and the third target 13C are exposed to the film forming space 2S via the opening portion 22, and the second target 13B is shielded by the shutter body 21. Thus, for the first 13 A and the third target 13C exposed in the film forming space 2S, the arrangement pattern of the second gate 30 is as shown in the ninth (a) to ninth (c) In the mode, the materials of the first target 13A and the third target 13C are selected to be selected. The ninth (a) diagram shows a state in which the second shutter 30 is placed at the reference position. In this state, the first barrier portion 36 faces the first target 13A, and the second barrier portion 37 faces the third target 13C. Therefore, in the present embodiment, Ni tends to increase the film thickness in the outer peripheral portion S2 of the substrate, and in the case where Ni is used as the first target 13A, the film on the outer peripheral portion S2 of the substrate can be suppressed by the first barrier portion 36. The thickness is increased, and as a result, the film thickness and composition of the film formed on the substrate S can be made uniform. Further, in the case where MgO is used as the third target 13C, the film thickness at the outer peripheral portion S2 of the substrate can be suppressed from increasing, and as a result, the film thickness and composition of the film formed on the substrate S can be made uniform. In the case where the above-described materials are used as the first target 13A and the third target 13C, the arrangement pattern of the ninth (a) is effective in uniformizing the film thickness, but the first target 13A and the third target 13C are made of other materials. In other cases, the second gate 30 may be used as another arrangement mode in accordance with the tendency of the film thickness distribution of the material. Further, in a state where only the second shutter 30 is rotated to the configuration mode of 201224185, the transmission mechanism 25 is driven, and as the non-transmission state in which the rotational force is not transmitted to the first shutter 20, only the second shutter 30 can be The reference position is rotated to the desired configuration mode. In the following description, the rotation directions of the first shutter 20 and the second shutter 30 are clockwise from the lower side of the second shutter 30, but they may be different from each other even if they are counterclockwise. The ninth (b) diagram shows a state in which the second shutter 30 is rotated by 120 from the reference position. In this case, the first target 13A faces the opening portion 34, and the third target 13C faces the first barrier portion 36. This configuration mode is effective, for example, in a case where a material having a relatively uniform film thickness distribution can be obtained even in a state without a barrier portion, and a material is used in the third target 13C, and the material is used in the third target 13C. In the state where there is no barrier portion, the thickness of the substrate outer peripheral portion S2 is increased, and the width of the region where the film thickness of the substrate outer peripheral portion S2 is increased (hereinafter referred to as the film thickness increasing region) is particularly increased. The ninth (c) diagram shows a state in which the second shutter 30 is rotated by 240 ° from the reference position. In this case, the first target 13A faces the second barrier portion 37, and the third target 13C faces the opening portion 34. This configuration is effective in the case where, for example, a material having a large film thickness at the outer peripheral portion S2 of the substrate is used in the first target 13A even in the state without the barrier portion, and a relatively uniform portion can be obtained even without the barrier portion. The material of the film thickness distribution is used in the third target 13C. In the case where the barrier is not in the state of the barrier portion, a material having a large film thickness is used as the target 13 in the outer peripheral portion S2 of the substrate, and the width of the region where the film thickness is increased is examined by a preliminary experiment or simulation. In this description

20 201224185 The film thickness distribution of a film formed by sputtering of a given target in a sputtering apparatus without a barrier portion (36, 37) is called "distribution according to the film thickness of the target material" or "target Film thickness distribution during single sputtering. Then, when the sputtering is performed, the width Δλν 抑制 which can suppress the increase in the film thickness by the first barrier portion 36 and the width AW2 at which the film thickness can be suppressed by the second barrier portion 37 are selected, and the film thickness close to the investigation is selected. The width of the area is increased as a barrier facing the target 13. Further, by tilting the cathode 10 having the selected barrier portion and changing the inclination angle of the target 13, it is possible to finely adjust the width of the region where the film thickness is increased by the barrier portion, and to approach the actual film thickness. Increase the width of the area. For example, when the inclination angle of the target 13 is increased, the width of the region where the film thickness is increased by the barrier portion can be reduced. When the inclination angle of the target 13 becomes small, the width of the region where the film thickness is increased can be suppressed by the barrier portion. When sputtering is performed by the second target 13A and the third target 13C, as shown in the tenth (a) to (c), the first shutter 20 is disposed from the reference position to a position rotated by 120°. The first gate 20 disposed at this position selectively exposes the second target 13B and the third target 13C to the film forming space 2S via the opening portion 22, and shields the first target 13A by the shutter body 21. Then, the second shutter 30 is arranged in an arrangement mode in which the materials of the selected targets (13B, 13C) are matched in the three arrangement modes shown in the tenth (a) to (c). The tenth (a) diagram shows a state in which the second shutter 30 is placed at the reference position. The second target 13B faces the opening portion 34, and the third target 13C faces the second barrier portion 37. This configuration mode is, for example, the present embodiment, and is made with Co.

S 21 201224185 is the second stem 13B, using MgO as the third nc. That is to say, the second stem 13B is like c. In the case where the material f of the relatively uniform film thickness distribution is obtained even in the absence of the portion, the two doors 30 prevent the particles reaching the outer peripheral portion S2 of the substrate from being blocked by the opening portion 34 having no wall portion facing the second target. The flight can be made to deposit the sputtered particles of the first target 13B on the outer periphery of the substrate. In the state in which the second target 13B is MgO, in the state where the barrier portion is not provided, the material of the outer peripheral portion S2 is increased in thickness, and the second gate 3〇, the second barrier portion 37 faces the second crucible portion 13B, and the result is The film thickness and composition of the film formed by the substrate S. - In the tenth (b)th diagram, the state in which the second gate 3〇 is taken from the reference bit 120 is shown. The second target 13B faces the second barrier portion 37, and the third = 13C faces the first barrier portion 36. This configuration mode is effective, for example, in a state in which the outer peripheral portion of the substrate is thicker in the state without the barrier portion, and the material is used in the second target 13B, and in the third 耙l3c, a material, the material is not present. In the state of the barrier portion, the thickness of the S2 film is increased on the substrate, and the width of the increased region of the thickness is particularly large. Neighbor. Tenth (the figure shows a state in which the second shutter 30 is rotated from the reference position. The second target 13B faces the first barrier portion 36, the third target 240 surface, and the opening portion 34. This configuration mode is, for example, in the following cases L3c uses a material in the first stem 13B, and the material becomes thicker without the barrier portion and under the outer peripheral portion S2 of the substrate, and the enlarged region of the film thickness is particularly large, and the third target 13C A material having a relatively uniform film thickness distribution can be obtained even in a state where it is not present. When the rate portion is sputtered by the first target 13A and the second target 13B, for example, w 22 201224185 eleven (a) to (c) As shown, the first shutter 20 is disposed from the reference position to a state of rotation of 240. The first shutter 20 disposed at this position selectively exposes the first target 13A and the second target 13B to the film formation via the opening portion 22. The space 2S shields the third target 13C with the shutter body 21. Then, the second gate 30 is configured to match the selected target (13A) in the three configuration modes shown in the eleventh (a) to (c). , 13B) Configuration mode of the material. Figure 11 (a) shows the second gate 30 placed in the reference The first target 13A faces the first barrier portion 36, and the second target 13B faces the opening portion 34. This arrangement mode is, for example, the present embodiment, using Ni as the first target 13A and Co as the second The condition of the target 13B is effective. That is, for the first target 13A, the second gate 30 suppresses an increase in film thickness at the outer peripheral portion S2 of the substrate by the first barrier portion 36, and for the second target 13B, the second The shutter 30 does not hinder the flight of the ore particles reaching the outer peripheral portion S2 of the substrate. Fig. 11(b) shows a state in which the second shutter 30 is rotated by 120° from the reference position. The first target 13A faces the opening 34, The two targets 13B face the second barrier portion 37. This arrangement mode is effective, for example, in a state in which a relatively uniform film thickness distribution is obtained even in the absence of the barrier portion, and the material is used in the first target 13A without the barrier portion. The material which becomes thicker in the outer peripheral portion S2 of the substrate is used in the second target 13B. The eleventh (c) shows a state in which the second shutter 30 is rotated by 240 from the reference position. The first target 13A faces the second The barrier portion 37, the second target 13B faces the first barrier portion 36. This configuration mode is for example The following conditions are

S 23 201224185 Effectively: a material having a large film thickness at the outer peripheral portion S2 of the substrate in the state without the barrier portion is used for the first target 13A, and a material having a material for the second target 13B without the barrier portion is used. The film thickness is increased in the outer peripheral portion S2 of the substrate, and the width of the increased region of the film thickness is particularly large. Next, the order of the sputtering process will be described. When the substrate S is subjected to a film forming process, the substrate is carried into the chamber 2, and the substrate S is placed on the substrate holder 4 and rotated to a specific film formation start position. Further, the sputtering gas from the gas supply mechanism 9 is introduced into the film forming space 2S, and the pressure in the chamber 2 is adjusted to a specific pressure. Next, the first gate 20 and the second shutter 30 are rotated to the desired rotational position by the drive motor 23. Two targets 13 are selected. The incident control portion suitable for these targets 13 is faced. At this time, the first shutter 20 and the second shutter 30 reach the rotation angle to the desired rotation position, and if the angles are the same at the same angle, the shutters 20 and 30 can be rotated by the same angle in the same direction. The first shutter 20 is rotated to a desired rotational position in a state where the rotation angles are different from each other. Thereafter, the communication mechanism 25 is switched to the non-transmission mode, and the drive motor 23 is rotated in the clockwise or counterclockwise direction with the second shutter 30 in a state where the rotation of the drive motor 23 is not transmitted to the first shutter 20. The angle at which the desired rotational position corresponds. Thereby, the first shutter 20 is maintained in the stopped state, and only the second shutter 30 is rotated to the desired rotational position. Thus, the barrier portions 36, 37 or the openings 34 suitable for selecting the target can be faced to these selective targets. After each of the shutters 20, 30 is rotated to a desired rotational position, the magnetic circuit 15 for the cathode 10 of the selected target is driven to generate a magnetron magnetic field on the sputtered surface 13a of the selected target. Apply specific DC or AC power to the 24 201224185 Select Target. Thereby, discharge is started between the sputtered surface 13a of the selective target and the film forming space 2S, and sputtering is performed by the sputtered surface 13a. At this time, the barrier portions 36, 37 or the opening portion 34 suitable for each of the selected target materials face the respective selection targets. Therefore, the barrier portion 36 or 37 faces the target 13 which increases the film thickness of the outer peripheral portion S2 of the substrate at the time of sputtering without the barrier portion. In this case, by the shielding of the sputtered particles by the barrier portions 36 and 37, the number of sputtered particles reaching the outer peripheral portion S2 of the substrate is reduced, and the increase in the thickness of the outer peripheral portion S2 of the substrate is suppressed. Further, the target 13 having a relatively uniform film thickness distribution can be obtained without the barrier portion, and the opening portion 34 can be formed, so that the film can be formed without shielding the sputtering particles. Thus, the barrier target 36, 37 or the opening portion 34 corresponding to the tendency of the film thickness distribution of the selected target is selectively faced, so that the variation in the film thickness of each of the selected targets can be suppressed. When the conditions such as the gas flow rate, the inclination angle of the target, and the supply electric power from the external power source G are not changed, the film thickness variation in the radial direction of the film is suppressed. Therefore, the in-plane uniformity of the film thickness is improved without changing the film quality, and the composition in the same layer can be made uniform. Next, the sputtering of the selected target is performed, and the first shutter 20 is rotated to open the opening 22 of the first shutter 20 to face the changed selection target 13. Further, the second shutter 30 is rotated, and the barrier portions 36, 37 or the opening portion 34 which are suitable for the material of each of the selected selected targets face each of the selected targets. Thereafter, sputtering is performed. According to the above embodiment, the following effects can be obtained. (1) In the above embodiment, the sputtering apparatus 1 is a multi-component apparatus including a plurality of targets, and between the plurality of targets 13 and the film forming space 2S,

S 25 201224185 has a shutter mechanism Μ, and the shutter mechanism Μ has an opening 22 for selecting the target membrane space 2S. This gate mechanism 构成 is composed of the 20th and second gates 30. The second gate 3A includes the portions 30A, 30B, and 30C (the barrier portions 36 and 37 and the opening portion 341. The incident control portions 30A, 30B, and 30C: control the sputtering particles that are released through the opening portion and toward the outer peripheral portion S2 of the substrate. No.: Splashing: According to the opening portion 2 passing through the first gate 20; and the selection target in the film forming space 2S, the "direction" when the single element is plated, will be from the human shot control unit 30A to 30C Any one of the incident control portions suitable for the selection is suitable for the selected target. For example, materials such as smear materials such as Co, Ti, etc., have different transfer profiles when the material (4) is plated. Even if a plurality of targets 13 are mounted In the same apparatus, the distribution of the number of sputtered particles reaching the substrate s can be uniformized in each surface of the target. Therefore, it is lifted before changing the film quality without changing the gas flow rate, the tilt angle of the target, and the power from the external power source g. It can improve the uniformity of the film in the in-plane of a certain film thickness and improve the uniformity of the film composition of the soil in the same layer. (2) In the above-mentioned form, the incident control section, 3〇b, 3〇 c (barriers 36, 37 and opening 34), the height of the corresponding wall is different In this part, the wall portion surrounds the outer circumference of the strontium ore from ##. In other words, the incident control unit 3 includes the first barrier portion 36 which is a wall portion which is relatively high (Η1), so that there is a large shielding. The incident control unit 30C includes the second barrier portion 37 which is a wall portion which is lower than the first barrier portion 36 (Η2). Therefore, the incident control portion 30C has a simple closing portion 34 than the incident control portion 3〇α incident control portion. The wall portion of the mouth portion 34 is opened 201224185, that is, the height is "zero." Therefore, the incident control portion 30B has the minimum degree of shielding. Therefore, the shielding target can be made different depending on the target 13 without complicating the device or the film forming step. 3) In the above embodiment, the shutter mechanism 构成 is constituted by the first shutter 20 having the two opening portions and the second shutter 30 having the barrier portions 36 and 37 and the opening portion 34. The first shutter 20 is set as the target 13 is rotatable such that the two stems 13 are selectively exposed to the film forming space 2S via the two opening portions 22. The second shutter 30 is disposed closer to the substrate S than the first door 20 by rotating to The desired position, and two cognacs 3 selectively exposed with the first gate 20 Correspondingly, both of the barrier portions 36, 37 and the opening portion 34 face the two targets 13, respectively. Therefore, even in the case of selectively exposing a plurality of targets 13 and sputtering, "since suitable for these The entrance control portion of the target 13 is focused on the degree of film thickness and uniformity of the composition. That is, as shown in the fifteenth figure, the film thickness distribution is in accordance with the dry material. Therefore, 'driving The motor 2 3 rotates the second shutter 3, and among the second partitions 3GA to 3GC, the opening of the incident control unit selected for the remaining material can be released in accordance with the accident. It is possible to thicken the film on the substrate with a large film thickness. In the opening of the sugar: a part of the ^ part, the number of incident control that the 嗲u jin chooses is not exposed. Thereby, a composite film corresponding to a plurality of selected targets can be formed on the substrate by a substantially uniform film thickness and a substantially uniform composition on 201224185. [Second embodiment] Next, a second embodiment in which the present invention is embodied will be described based on the twelfth to thirteenth drawings. Further, since the second embodiment only changes the configuration of the first shutter 20 of the first embodiment, the detailed description of the same portions will be omitted. As shown in Fig. 12, in the first shutter 20 of the present embodiment, one opening portion 22 is formed to penetrate through the shutter body 21. As in the first embodiment, the opening portion 22 has a circular shape whose inner diameter is formed to be slightly larger than the diameter of the target 13. Therefore, in the present embodiment, when sputtering is performed, one target 13 is exposed to the film formation space 2S via the opening portion 22. The thirteenth (a) diagram shows a state in which the first shutter 20 and the second shutter 30 are disposed at the reference position. The first shutter 20 disposed at this position exposes the first target 13A in the film forming space 2S via the opening 22. The first barrier portion 36 of the second gate 30 faces the first target 13A. The pattern of the thirteenth (a) diagram is effective only when the film formation is performed by, for example, the first target 13A composed of Ni. Further, in the present embodiment, although the first barrier portion 36 faces the first target 13A, the second barrier portion 37 may face the first target 13A in accordance with the film thickness distribution of the target. The thirteenth (b) diagram shows a state in which the first shutter 20 is rotated by 120° from the reference position and the second shutter 30 is placed at the reference position. The first shutter 20 disposed at this position exposes the third target 13C in the film forming space 2S via the opening 22. The second barrier portion 37 of the second gate 30 faces the third target 13C. Using only a third target consisting, for example, of MgO

28 201224185 13C When the film formation is performed, the configuration mode of the thirteenth (b) diagram is valid. Further, in the present embodiment, the second barrier portion 37 faces the third target 13C, but the first barrier portion 36 may face the third target 13C in accordance with the film thickness distribution of the target. The thirteenth (c) diagram shows a state in which the first shutter 20 is rotated by 240° from the reference position and the second shutter 30 is placed at the reference position. The first shutter 20 disposed at this position exposes the second target 13B in the film forming space 2S via the opening 22. The opening portion 34 faces the second target 13B. The arrangement pattern of the thirteenth (c) diagram is effective only when the film formation is performed by, for example, the second target 13B composed of Co. Therefore, according to the second embodiment, in addition to the effects described in the first embodiment, the following effects can be obtained. (4) In the second embodiment, the opening 22 formed in the first shutter 20 is formed as one, and when the sputtering is performed, the film is formed by using one target 13. Further, in the second shutter 30, barrier portions 36, 37 and openings 34 suitable for a plurality of targets 13 are provided. Therefore, even in the case where one target 13 is selectively exposed and formed into a film, since the incident control portions 30A to 30C suitable for the target 13 can be applied, the degree of freedom of the film forming step is not hindered, and the film thickness and the film thickness can be obtained. Homogenization of the composition. [Third Embodiment] Next, a third embodiment of the present invention will be described based on the fourteenth embodiment. Further, in the third embodiment, only the configuration of the shutter mechanism 第一 of the first embodiment is changed. Therefore, the detailed description of the same portions will be omitted. In the sputtering apparatus 1 of the present embodiment, two targets 13 are provided,

S 29 201224185 13B, the shutter mechanism μ has a gate 40. The shutter 40 is connected to the drive shaft 24 of the drive motor 23 in the same manner as the above-described embodiment, and is configured to rotate with respect to the handle 13 fixed to the cathode 1 of the chamber 2. The shutter 40 is provided with two incident control portions 50A, 50A in its shutter body 41. The incident control units 5A and 50B are provided with openings 51 and 52, respectively. The first incident control unit 5A includes an annular barrier portion 53, and the barrier portion 53 is provided on the outer circumference of the opening 51. The second incident control unit 5〇β only includes the opening 52. An annular barrier portion is not provided on the outer circumference of the opening portion 52. Further, the openings 51 and 52 have the same configuration as the openings 33 and 34 of the above-described embodiment. At the time of sputtering, the shutter 40 is rotated, and the two targets 13 are exposed to the film forming space 2S via the openings 52, 53. The target 13A is, for example, Ni, and the outer peripheral portion S2 of the substrate is a material having a reduced thickness, and the first incident control unit 50A having the barrier portion is facing the target 13A. The target is the second example, Co, even in the state where there is no barrier, the situation in which the relative wealth becomes = 'the second person-injection control unit that does not have the barrier portion faces &:, according to the third embodiment, except for the first embodiment The effects of (1) and (2) described in the form can also provide the following effects. (5) In the above embodiment, the shutter mechanism 构成 is constituted by a single gate 40. The gate 4 is provided with a first incident control unit 50 having a barrier portion and a second incident control portion 5 having no barrier portion. 〇β. Therefore, the thickness distribution of the film thickness is uniformed for each target by the one gate 40, so that the in-plane uniformity of the film thickness formed on the substrate S is improved, and the uniformity of the film formation in the same layer can be improved. 30 201224185 Further, the above embodiments may be modified as follows. In the above embodiment, the plurality of incident control units include the annular barrier portions 36 and 37 and the opening portion 34. The plurality of incident control portions have different heights (including the height of zero) corresponding to the peripheral wall portions of the opening portions 33 to 35, and have different shielding portions. The wall portion of the incident control portion may have other shapes. For example, the ring shape may be a tapered shape in which the inner diameter thereof becomes smaller as it goes from the target side toward the substrate side. Alternatively, a collimator may be provided on the inner side of the annular member. 'The collimator has a partition plate near the central axis X4 of the substrate s'. There is no collimator at a distance from the central axis. By passing the collimator, the number of sputtered particles reaching the outer peripheral portion S2 of the substrate is reduced. It is important that the incident control unit having a high degree of shielding has a shape in which the number of splash-bonded particles reaching the outer peripheral portion S2 of the substrate is reduced. In the first embodiment, the barrier portions 36 and 37 have different heights, but the materials of the light portions 13 are lighter, and the barrier portions 36 and 37 may be formed at the same height. In the above embodiment, the wall portions of the respective barrier portions 36 and 37 are fixed in height. However, the height of the wall portion continuous along the circumferential direction of the opening corresponding to each barrier portion may be different. In this case, it is possible to increase a portion of the wall portion "reducing the other portion" to reduce the number of splash particles reaching the outer peripheral portion S2 of the substrate. In the above embodiment, the sputtering apparatus is embodied as a magnetron sputtering apparatus, but it may be embodied as an ECR (electron Cyclotron Resonance) sputtering apparatus. Even in the case where the device is embodied, the barrier layer corresponding to the film thickness distribution corresponding to the dryness is prevented from interfering with the movement of the sputtering particles in the region where the film thickness is reduced to 201224185. [Simple description of the diagram] The first picture: full section: a schematic sectional view of the clock device. Second figure: A schematic diagram showing the dry configuration. Figure 3: Exploded oblique view of the gate mechanism. Fourth picture: The following picture of the first gate. Fifth picture: The following picture of the second gate. Figure 6: Sectional view of the stem and the first shield. Figure 7 is a cross-sectional view of the target and the second shield. Figure 8: Sectional view of the handle and the opening. Fig. 9(a) to (e) are schematic diagrams showing arrangement patterns of the first and second shutters. Fig. 10(a) to (c) are schematic diagrams showing the arrangement patterns of the first and second shutters. = Fig. (a) to (c) are schematic diagrams showing the arrangement patterns of the first and second gates. ^10 = Diagram: An exploded perspective view of the shutter mechanism of the second embodiment. Twenty-two diagrams: (a) to (c) are schematic diagrams showing the arrangement patterns of the first and second gates. = fourteenth. A schematic cross-sectional view of a sputtering apparatus according to a modification. Figure 15: A graph showing the film thickness distribution of targets of different materials. [Main component symbol description] 32 201224185 1 Sputtering device 2 chamber 2a Chamber body 2b Upper wall portion 2c Bottom wall portion 2d Exhaust port 2e Gas introduction port 2S Film forming space 4 Substrate cool 5, 24 Drive shaft 6, 23 Drive motor 7, 25 transmission mechanism 8 anti-adhesion plate 9 gas supply mechanism 10 cathode 10A to 10C cathode 11 back plate 12 barrier 12a accommodating portion 13, 13A to 13C target 13a is deposited surface 14 magnetic device 15 magnetic circuit 20, 30 40 gates 20a and 30a 33 below 201224185 21, 31, 41 gate body jaws 21a, 31a 22, 33 to 35, 51, 52 Openings 30A to 30C, 50A, 50B are incident control portions 36, 37, 53 barrier portion 36u Below 36P opening 37u below 37P opening G external power supply HI, H2 long LI, L2 linear Μ gate mechanism PC1 ~ PC3, PC5, PC6, PC9 ~ PC11 center point PC4, PC8 apex

Pld, Pk2, Pk3 Reference points R1, R2 ring-shaped S-substrate S1 surface S2 substrate outer peripheral portion SP1, SP2, SP3 particle tracking XI target axis X2 central axis X4 central axis α angle

34 201224185 0 ini, Θ in2 incident angle △ W1, △ W2 width s: 35

Claims (1)

201224185 Seven patent application scope: 1. A sputtering apparatus having a plurality of targets and forming a film on a substrate disposed in a film forming space, characterized in that: a gate mechanism is provided, and the gate mechanism is disposed in the plurality of targets and film forming spaces. The shutter mechanism has an opening that exposes a selected one of the plurality of targets to the film forming space, and the shutter mechanism includes a plurality of incident control units that control release from the selected target and proceed to the substrate The number of the sputter particles in the outer peripheral portion, the plurality of incident control portions having a plurality of shielding degrees for the sputtered particles, and the film thickness distribution when the selected rough portion exposed to the film forming space is separately sputtered, from the plural Among the incident control units, an in-fuse control unit suitable for the selection target is applied to the selection target. 2. The sputtering apparatus according to claim 1, wherein the plurality of incident control units have different shielding levels corresponding to heights of the wall portions disposed outside the plurality of targets. 3. The sputtering apparatus according to claim 1, wherein the plurality of incident control units of the shutter mechanism include: an incident control unit having an outer circumference of the sputtered surface of the selective target; The wall portion; and the incident control portion are composed only of openings that expose the sputtered surface of the selected target. 4. The sputtering apparatus according to claim 1, wherein the shutter mechanism includes: a first gate having an opening smaller than a number of the plurality of targets; and the plurality of targets are rotatably provided The selected target is a target selectively exposed between the film forming spaces 36 201224185 via the opening portion of the first gate; and the second gate is disposed closer to the substrate than the first gate The position includes the plurality of incident control units, and the incident control unit suitable for the selective target selectively exposed by the first shutter faces the selective target. 5. The sputtering apparatus according to claim 1, wherein the plurality of incident control units have an incident control unit having a relatively large shielding degree, and have a wall portion that hinders the selection of the target from the selection target The sputtered surface is released and travels to the outer peripheral portion of the substrate, and the selected target is a material such that a film formed at the time of sputtering of the target monomer has a larger film thickness at a peripheral portion of the substrate than a central portion of the substrate. In the case of the selected target, the incident control unit having the relatively large degree of shielding described above is applied. 6. The sputtering apparatus according to claim 1, wherein the shutter mechanism includes a dome-shaped member rotatable in the film formation space, and the plurality of incident control units include: The incident control unit includes a first opening formed on the dome-shaped member, and a first shielding portion surrounding the first opening, the first shielding portion being oriented only from the dome-shaped member toward the substrate The second incident control unit includes a second opening that is not surrounded by the shielding portion that protrudes toward the substrate, and is formed in the dome-shaped member, and the sputtering device further includes a drive motor that rotates the dome-shaped member, and the drive motor rotates the dome-shaped member so that S. 37 201224185 selects a material corresponding to the selection target in the opening of the plurality of incident control portions The opening portion exposes the selected target. 7. The sputtering apparatus according to claim 6, wherein the plurality of incident control units further includes a third incident control unit, wherein the third incident control unit includes: a third opening portion formed in the circle The lid-shaped member and the second shielding portion surround the third opening, and protrude from the dome-shaped member toward the substrate at a second height different from the first height. 8. The sputtering apparatus according to claim 6, wherein the first shielding portion is an annular wall portion surrounding the first opening. 38