JP2010126789A - Sputtering film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a multi-chamber type sputtering film deposition system wherein the compacting of the whole is achieved, and further, efficient treatment is performed. <P>SOLUTION: The sputtering film deposition system includes: an attachment/detachment mechanism 16 by which the attachment/detachment of a wafer W is performed to a wafer holder; a pretreatment chamber 34 where pretreatment is performed to the wafer W; and a plurality of film deposition chambers 35a to 35d where sputtering film deposition treatment is performed to the wafer W. The insides of the respective film deposition chambers 35a to 35d are provided with electrostatic chuck tables 62 rotatable in a state where the wafer W is electrostatically adsorbed, and a plurality of sputtering sources 51 are provided for one film deposition chamber, while the respective sputtering sources 51 are mounted with targets 50 confronted while being tilted to an electrostatic adsorption face 62a, and, in the respective film deposition chambers 35a to 35d, a shutter 65 capable of shielding at least one of the plurality of sputtering sources 51 to a discharge space in each film deposition chamber is provided. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a multi-chamber sputter deposition apparatus.

In the manufacturing process of various semiconductor devices, a plurality of layers of films may be continuously formed. For such continuous film formation, a so-called multi-chamber type processing apparatus having a plurality of processing chambers is used (for example, see Patent Document 1).
Japanese Patent Laid-Open No. 9-312262

  In a multi-chamber type sputter deposition apparatus, since the number of chambers is large, the entire apparatus tends to be large. For example, in Patent Document 1, one type of film formation is performed in each chamber, and as the number of film types to be continuously formed increases, more chambers are required correspondingly, and accordingly the entire apparatus becomes larger. To do. In addition, since the number of times that the substrate moves between the chambers increases, the processing efficiency also decreases.

  The present invention has been made in view of the above-described problems, and provides a multi-chamber type sputter deposition apparatus that can reduce the size of the entire apparatus and can perform efficient processing.

  According to one aspect of the present invention, an atmospheric loader area, a cassette loading portion that is provided facing the atmospheric loader area and into which a cassette that can accommodate a substrate is loaded, and is provided facing the atmospheric loader area, A desorption mechanism for desorbing the substrate from the substrate holder, a load lock chamber provided adjacent to the atmospheric loader area via an atmospheric gate valve, and the cassette loading unit provided in the atmospheric loader area An atmospheric robot for carrying the substrate in and out of the desorption mechanism and the load lock chamber; a vacuum transfer chamber provided adjacent to the load lock chamber via a first vacuum gate valve; A pretreatment chamber provided adjacent to the vacuum transfer chamber via a vacuum gate valve, in which pretreatment is performed on the substrate before film formation under reduced pressure, and a third vacuum gate valve A plurality of film forming chambers that are provided adjacent to the vacuum transfer chamber and perform sputter film formation on the substrate under reduced pressure, and are provided in the vacuum transfer chamber and are loaded with the load under reduced pressure. A vacuum robot that carries the substrate in and out of the lock chamber, the pretreatment chamber, and the film formation chambers, and each substrate can be rotated in a state in which the substrate is electrostatically adsorbed. An electrostatic chuck table is provided, and a plurality of sputtering sources are provided for each of the film forming chambers, and each of the sputtering sources is opposed to the electrostatic chuck surface of the electrostatic chuck table in an inclined state. A target is mounted, and a shutter capable of shielding at least one of the plurality of sputtering sources from a discharge space in the film forming chamber is provided in each film forming chamber. Sputter deposition apparatus is provided.

  According to the present invention, it is possible to reduce the size of a sputtering film forming apparatus capable of continuously forming a plurality of layers under reduced pressure, and to improve the processing efficiency.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, a semiconductor wafer is illustrated as an example of a substrate to be deposited. However, the present invention is not limited to a semiconductor wafer, for example, an optical disc such as a disc-shaped recording medium (DVD (Digital Versatile Disc)), It can also be applied to film formation on a hard disk, etc.), mirror, display panel, solar cell panel, and the like.

  FIG. 1 is a schematic diagram showing a planar layout of a sputter deposition apparatus according to an embodiment of the present invention. The sputter deposition apparatus according to this embodiment is largely divided into an atmospheric loader unit 11 and a vacuum processing unit 31. The atmospheric loader unit 11 is always under atmospheric pressure, while the internal space of the vacuum processing unit 31 is connected to a vacuum exhaust system and can be depressurized.

  The atmospheric loader unit 11 has an atmospheric loader area 12, and an atmospheric robot 14 is provided at the center thereof. The atmospheric robot 14 is a double-arm robot that has two arms that move in the front-rear direction, and that turns and moves up and down.

  Around the atmospheric robot 14, a plurality of cassette loading sections 13 and one detaching mechanism 16 are provided, which respectively face the atmospheric loader area 12. In the cassette loading unit 13, a cassette that can be loaded with and accommodated semiconductor wafers is set. The desorption mechanism 16 may be provided at a plurality of locations.

  A substrate holder setting unit 15 is provided in the vicinity of the detaching mechanism 16. Further, a single arm robot 17 that has one arm that moves in the front-rear direction and that turns and moves up and down is provided in the vicinity thereof, and the substrate holder is set on the substrate holder set unit 15 by the robot 17. Is conveyed to the desorption mechanism 16.

  The semiconductor wafer W is taken out from the cassette by the atmospheric robot 14 and transferred to the desorption mechanism 16, and is returned from the desorption mechanism 16 to the cassette. In the desorption mechanism 16, the semiconductor wafer W is desorbed from the substrate holder. The desorption mechanism 16 is also provided with an alignment mechanism for the semiconductor wafer W.

  Here, the schematic diagram of a board | substrate holder is shown in FIG. The substrate holder has a tray 22 and a mask 23. FIG. 2 also shows the semiconductor wafer W held on the tray 22 and the mask 23.

  The tray 22 is formed in, for example, a circular ring shape, and has an outer diameter larger than the diameter of the semiconductor wafer W and an inner diameter smaller than the diameter of the semiconductor wafer W. On the upper surface side of the tray 22, a wafer support portion 25 and a mask support portion 24 are provided. The mask support portion 24 is provided on the outer periphery side larger than the diameter of the semiconductor wafer W in the tray 22, and the wafer support portion 25 is provided on the inner periphery side of the mask support portion 24.

  The semiconductor wafer W is supported on the tray 22 by placing the outer edge portion (peripheral edge portion) on the wafer support portion 25 of the tray 22. The inner diameter of the mask support 24 is slightly larger than the diameter of the semiconductor wafer W, and the semiconductor wafer W is accommodated inside the inner peripheral surface of the mask support 24. The positional deviation in the radial direction of W is restricted.

  The mask 23 is also formed in a circular ring shape like the tray 22, and has an outer diameter larger than the outer diameter of the tray 22 and an inner diameter smaller than the inner diameter of the tray 22. The mask 23 is placed on and superposed on the mask support 24 of the tray 22. When the mask 23 is overlaid on the mask support 24, the mask 23 covers all of the tray 22 including the wafer support 25, and when the semiconductor wafer W is supported on the tray 22 as shown in FIG. The outer edge of the semiconductor wafer W is covered. At this time, since the upper surface of the wafer support portion 25 is located lower than the upper surface of the mask support portion 24, a slight gap is formed between the film formation surface (the upper surface in FIG. 2) of the semiconductor wafer W and the lower surface of the mask 23. The mask 23 does not contact the semiconductor wafer W.

  With reference to FIG. 1 again, the vacuum processing unit 31 will be described.

  The vacuum processing unit 31 has one load lock chamber 32, one vacuum transfer chamber 33, one pretreatment chamber 34, and a plurality of film forming chambers 35a to 35d, all of which are in contact with the atmosphere. The structure is hermetically cut off and can be decompressed by a vacuum exhaust system (not shown). The load lock chamber 32 is provided between the atmospheric loader area 12 and the vacuum transfer chamber 33, and the pretreatment chamber 34 and the film forming chambers 35 a to 35 d are provided around the vacuum transfer chamber 33. The atmospheric loader area 12, the load lock chamber 32, the vacuum transfer chamber 33, and the pretreatment chamber 34 are not limited to one, and a plurality of them may be provided.

  The sputter film forming apparatus according to the present embodiment is a so-called multi-chamber sputter film forming apparatus having a plurality of film forming chambers 35a to 35d. For example, FIG. 1 illustrates a configuration having four film forming chambers 35a to 35d, but the number of film forming chambers may be other than four.

  The load lock chamber 32 is provided adjacent to the atmospheric loader area 12 via the atmospheric gate valve 41, and the load lock chamber 32 is adjacent to the vacuum transfer chamber 33 via the vacuum gate valve 42. In the vacuum transfer chamber 33, there is provided a vacuum robot 36 having a single arm robot structure that has one arm that moves in the front-rear direction and that performs a swinging and raising / lowering operation.

  The pretreatment chamber 34 is provided adjacent to the vacuum transfer chamber 33 via the vacuum gate valve 43. An electrostatic chuck table that electrostatically chucks the semiconductor wafer W loaded therein is provided in the pretreatment chamber 34, and a heating mechanism such as a heater is built in the electrostatic chuck table.

  Each of the film forming chambers 35a to 35d is provided adjacent to the vacuum transfer chamber 33 via the vacuum gate valves 44 to 47, respectively. Each of the film forming chambers 35a to 35d is configured in the same manner. For example, the film forming chamber 35a is shown in FIG. 3 as a representative.

  The film formation chamber 35a is hermetically shut off from the outside by the chamber wall 52, and various gases can be introduced into the film formation chamber 35a via a gas introduction system (not shown) and evacuated via an exhaust system (not shown). Is possible. By controlling the gas introduction amount and the exhaust amount, the inside of the film forming chamber 35a can be brought to a desired pressure with a desired gas.

  An electrostatic chuck table 62 is provided near the bottom of the film forming chamber 35a. In this embodiment, in order to form a film uniformly on the entire surface of the semiconductor wafer W to be deposited, sputtering film formation is performed while rotating the semiconductor wafer W attracted and fixed to the electrostatic chuck table 62. Therefore, the electrostatic chuck table 62 has a rotation shaft 57 connected to a rotation driving mechanism (not shown) outside the film forming chamber 35a, and is rotatably provided around a rotation center indicated by a one-dot chain line C1 in FIG. Yes.

  An electrostatic chuck mechanism including a metal base member 54 and a ceramic dielectric 53 is provided on the electrostatic chuck table 62. The dielectric 53 is formed in a disk shape, for example, and has a circular electrostatic attraction surface 62a on the upper surface thereof.

  Electrodes are provided inside the electrostatic chuck table 62, and when a voltage is applied to the internal electrodes from a power source provided outside the film forming chamber 35a, the electrostatic chucking surface 62a and the semiconductor placed thereon An electrostatic force is generated between the wafer W and the semiconductor wafer W is attracted and fixed to the electrostatic attracting surface 62a.

  The electrostatic chuck table 62 is provided with a substrate temperature control mechanism. Specifically, a heater is built in the electrostatic chuck table 62. Alternatively, a coolant flow path through which coolant is supplied is formed inside the electrostatic chuck table 62. The coolant flow path passes through the inside of the rotary shaft 57 of the electrostatic chuck table 62, and a coolant supply pipe provided outside the film forming chamber 35a through a rotary joint at the end of the rotary shaft 57. Or connected to a coolant supply source.

  A cable for supplying power to the heater and the electrode for the electrostatic chuck is also passed through the rotary shaft 57 of the electrostatic chuck table 62, and the film forming chamber 35a is connected to the end of the rotary shaft 57 via a slip ring. It is connected to an external power supply source.

  Further, a pusher mechanism 58 that raises and lowers the semiconductor wafer W with respect to the electrostatic chucking surface 62a is provided in the film forming chamber 35a. The pusher mechanism 58 has a rod portion 59, a table portion 61, and a pin 56, which are lifted and lowered integrally.

  The rod portion 59 penetrates the bottom wall portion of the chamber wall 52 and is connected to a driving mechanism such as a cylinder device or a motor (not shown) outside the film forming chamber 35a. The rod part 59 is moved up and down by the drive of the drive mechanism.

  A table portion 61 is provided at the upper end portion of the rod portion 59 in the film forming chamber 35a. The table portion 61 extends substantially horizontally in the film forming chamber 35 a, and a through-hole through which the rotation shaft 57 of the electrostatic chuck table 62 is passed is formed at the center thereof. Can be moved up and down relatively.

  On the table portion 61, a plurality of pins 56 extending upward are provided. Each pin 56 is passed through a guide hole 55 formed through the vertical direction of the electrostatic chuck table 62, and an upper end portion of each pin 56 can protrude above the electrostatic chuck table 62.

  A sputtering source 51 is provided above the electrostatic chuck table 62 in the film forming chamber 35a. A plurality of sputtering sources 51 (for example, two in this embodiment) are provided for each film forming chamber. Each sputter source 51 has a cup-shaped case 71 and is attached to the upper part of the chamber wall 52 with its opening facing the discharge space above the electrostatic chuck table 62 in the film forming chamber 35a. A target 50 and a cathode electrode (not shown) are provided inside the case 71.

  Each target 50 is formed in a disk shape, for example, and the diameter of each target 50 is smaller than the diameter of the semiconductor wafer W. The surface to be sputtered in each target 50 is not opposed in parallel to the electrostatic attraction surface 62a (or the film formation surface of the semiconductor wafer W adsorbed thereto), but is opposed in an inclined state. . The two targets 50 are symmetrically arranged around the center of the electrostatic attraction surface 62a (or the semiconductor wafer W attracted thereto), and the portions closer to the electrostatic attraction surface 62a (or the semiconductor wafer W) side are mutually connected. Are provided so as to be widened.

  A shutter mechanism 63 is provided above the film forming chamber 35a. The shutter mechanism 63 is connected to a rotation driving mechanism (not shown) outside the film forming chamber 35a, and a rotation shaft portion 64 provided rotatably around a rotation center indicated by a one-dot chain line C2 in FIG. The shutter 65 is provided at the lower end of the portion 64 and spreads in a plate shape above the electrostatic chuck table 62.

  As the rotary shaft 64 rotates, the shutter 65 faces a position facing the opening of one sputter source 51 (position indicated by a solid line in FIG. 3) and a position facing the opening of the other sputter source 51 (see FIG. 3). 3, a position indicated by a two-dot chain line) can be selected. Since the shutter 65 faces the opening of the sputtering source 51, the target 50 mounted on the sputtering source 51 can be shielded from the discharge space above the electrostatic chuck table 62 in the film forming chamber 35a. The shutter mechanism 63 can also be moved up and down.

  Next, a film forming method using the sputter film forming apparatus according to this embodiment will be described.

  The plurality of semiconductor wafers W before the film forming process are set in the cassette loading unit 13 together with the cassette while being loaded and accommodated in the cassette. Then, the number and the number of steps of the semiconductor wafer W are confirmed by the mapping mechanism. At the same time, the tray 22 and the mask 23 set in the basic holder setting unit 15 are placed on the hand (or finger) 17 a of the robot 17 and conveyed to the detaching mechanism 16.

  The desorption mechanism 16 stands by with the tray 22 and the mask 23 separated in the vertical direction. Then, the atmospheric robot 14 takes out one semiconductor wafer W from the cassette. The semiconductor wafer W is placed on the hand (or finger) 14 a of the atmospheric robot 14 and transferred from the cassette to the detaching mechanism 16.

  The semiconductor wafer W transferred to the desorption mechanism 16 is moved between the tray 22 and the mask 23 waiting in a state of being separated in the vertical direction by the desorption mechanism 16. Then, after the arm of the atmospheric robot 14 is retracted in a state where the semiconductor wafer W is lifted from above the hand 14a by the pusher mechanism provided in the desorption mechanism 16, the pusher mechanism is lowered, as shown in FIG. A semiconductor wafer W is placed on the wafer support portion 25 of the tray 22.

  Next, the arm of the atmospheric robot 14 is advanced to the lower side of the tray 22 and then moved upward, so that the state shown in FIG. 2 (the semiconductor wafer W is placed on the wafer support 25 and the mask support The tray 22 in a state where the mask 23 is placed on 24 is lifted and placed on the hand 14a.

  Then, the atmospheric gate valve 41 of the load lock chamber 32 is opened, and the semiconductor wafer W held on the tray 22 and the mask 23 is transferred into the load lock chamber 32. At this time, the inside of the load lock chamber 32 is under atmospheric pressure. The tray 22 on which the semiconductor wafer W and the mask 23 are placed and supported is supported in the load lock chamber 32 by a plurality of pins of a pusher mechanism provided in the load lock chamber 32.

  Then, after the atmospheric gate valve 41 is closed and the load lock chamber 32 is evacuated to make a desired reduced pressure atmosphere, the vacuum gate valve 42 of the load lock chamber 32 is opened, and the vacuum installed in the vacuum transfer chamber 33 is opened. The arm of the robot 36 enters the load lock chamber 32, and the tray 22 on which the semiconductor wafer W and the mask 23 are placed and supported is placed on the hand (or finger) 36 a, and the vacuum transfer chamber 33 is under reduced pressure. Take out.

  Next, the vacuum gate valve 43 of the pretreatment chamber 34 is opened, the arm of the vacuum robot 36 enters the pretreatment chamber 34, and the tray 22 on which the semiconductor wafer W and the mask 23 are placed and supported is pretreated under reduced pressure. Carry it into the chamber 34. After this loading, the vacuum gate valve 43 in the pretreatment chamber 34 is closed.

  A pusher mechanism is provided in the pretreatment chamber 34, and the tray 22 is transferred from the hand 36a of the vacuum robot 36 onto a plurality of pins of the pusher mechanism. Thereafter, the pusher mechanism is lowered, and the semiconductor wafer W is moved to the electrostatic chucking surface of the electrostatic chuck table provided in the pretreatment chamber 34, and the surface opposite to the film forming surface of the semiconductor wafer W is electrostatically charged. Adsorbed on the adsorption surface. The semiconductor wafer W is attracted to the electrostatic attraction surface in a state of being out of support of the tray 22, and the tray 22 and the mask 23 are not in contact with the semiconductor wafer W in the state of being attracted to the electrostatic attraction surface. .

  The electrostatic chuck table in the pretreatment chamber 34 incorporates a heating mechanism such as a heater, and the semiconductor wafer W adsorbed on the electrostatic adsorption surface is subjected to heat treatment in a non-oxidizing atmosphere. By this heat treatment, moisture, contaminants (organic matter), foreign matters, and the like on the film formation surface of the semiconductor wafer W are removed, and adhesion of a film formed in the next film formation process can be improved.

  Alternatively, an electrostatic chuck table that supports the semiconductor wafer W is made to function as a cathode body (cathode electrode), and an electrode facing the electrostatic chuck table is provided in the upper portion of the pretreatment chamber 34 to cause discharge between the electrodes. The film formation surface may be cleaned (mainly removal of the surface oxide film) by sputter etching the film formation surface in the pretreatment chamber 34.

  Next, the vacuum gate valve 43 of the pretreatment chamber 34 is opened, and the vacuum robot 36 takes out the tray 22 on which the semiconductor wafer W and the mask 23 are placed and supported from the pretreatment chamber 34 to the vacuum transfer chamber 33, The vacuum gate valve 44 of the film chamber 35a is opened, the arm of the vacuum robot 36 enters the film forming chamber 35a, and the tray 22 on which the semiconductor wafer W and the mask 23 are placed and supported is placed in the film forming chamber 35a under reduced pressure. Carry in. After this loading, the vacuum gate valve 44 in the film forming chamber 35a is closed.

  In the film forming chamber 35a, the tray 22 is transferred from the hand 36a of the vacuum robot 36 onto the plurality of pins 56 of the pusher mechanism 58 shown in FIG. Then, the pins 56 are lowered, and the semiconductor wafer W is attracted and fixed to the electrostatic attraction surface 62 a of the electrostatic chuck table 62. The semiconductor wafer W is attracted to the electrostatic attraction surface 62a in a state of being detached from the support of the tray 22, and the tray 22 and the mask 23 are in contact with the semiconductor wafer W in the state of being attracted to the electrostatic attraction surface 62a. Not.

  A heating mechanism such as a heater is built in the electrostatic chuck table 62 in the film forming chamber 35a, and the semiconductor wafer W adsorbed on the electrostatic adsorption surface 62a is heated and controlled to a desired temperature. In this state, the electrostatic chuck table 62 is rotated to perform the sputter film formation process on the semiconductor wafer W.

  In the film formation chamber 35a, two different types of films are continuously formed. For example, first, sputtering is performed while the shutter 65 is moved to the position indicated by the solid line in FIG. 3, so that a voltage is applied to the sputtering source 51 on the side not shielded by the shutter 65 (right side in FIG. 3). The material of the target 50 mounted on the sputtering source 51 or the film of the reaction product (referred to as a first film) is formed on the semiconductor wafer W by being applied and driven. The other sputtering source 51 is not applied with a voltage and is not driven. Further, since the non-driven sputter source 51 is shielded from the discharge space by the shutter 65, it is possible to block the flying of particles from the target of the sputter source 51 being driven. Thereby, when a different material target is used, it can prevent that the other different material adheres to one side.

  Next, by performing sputtering film formation with the shutter 65 moved to the position indicated by the two-dot chain line in FIG. 3, a voltage is applied to the sputter source 51 on the side not shielded by the shutter 65 (left side in FIG. 3). The material of the target 50 mounted on the sputtering source 51 or the film of the reaction product (referred to as a second film) is formed on the first film. At this time as well, no voltage is applied to the other sputter source 51 shielded by the shutter 65 and the non-driven sputter source 51 is shielded from the discharge space by the shutter 65. The flying of particles from the target of the sputter source 51 during driving can be blocked.

  That is, in this embodiment, two different types of films can be continuously formed in one film forming chamber 35a. In order to realize this, two (two types) targets 50 are arranged in one film formation chamber 35a, but the size (diameter) of each target 50 is smaller than the diameter of the semiconductor wafer W, Since the two targets 50 are provided in an inclined state with respect to the film formation surface, an increase in the size (footprint) of the film formation chamber 35a is suppressed even though the two targets 50 are provided. be able to.

  Compared with the case where the target 50 is obliquely opposed to the film formation surface at a position shifted from the center of the film formation surface, the film thickness distribution in the wafer surface is compared with the case where the target 50 is opposed to the entire film formation surface in parallel. In this embodiment, since the semiconductor wafer W is rotated by the rotation of the electrostatic chuck table 62 during film formation, the uniformity of the film thickness within the wafer surface can be improved.

  Next, the vacuum gate valve 44 of the film formation chamber 35a is opened, and the vacuum robot 36 is used to mount the semiconductor wafer W on which the first film and the second film are formed and the tray 22 on which the mask 23 is placed and supported. Then, after taking out from the film forming chamber 35a to the vacuum transfer chamber 33, the vacuum gate valve 45 of the adjacent film forming chamber 35b is opened, and the arm of the vacuum robot 36 enters the film forming chamber 35b, and the semiconductor wafer W and mask The tray 22 on which the substrate 23 is placed and supported is carried into the film forming chamber 35b under reduced pressure. After this loading, the vacuum gate valve 45 in the film forming chamber 35b is closed.

  The film forming chamber 35b has the same configuration as that of the film forming chamber 35a shown in FIG. 3, and the semiconductor wafer W carried into the film forming chamber 35b is lowered by the pins 56 so that the electrostatic chucking surface of the electrostatic chuck table 62 is Adsorbed and fixed to 62a.

  The electrostatic chuck table 62 in the film forming chamber 35b also includes a heating mechanism such as a heater, and the semiconductor wafer W adsorbed on the electrostatic adsorption surface 62a is heated and controlled to a desired temperature. In this state, the electrostatic chuck table 62 is rotated to perform the sputter film formation process on the semiconductor wafer W.

  In the film forming chamber 35b, similarly to the film forming in the film forming chamber 35a, the two sputter sources 51 are selectively shielded, the shielded sputter sources 51 are not driven, and the unshielded sputter sources 51 are removed. By driving, two different types of films (third film and fourth film) are continuously formed on the second film. The third film and the fourth film are different from the first film and the second film. Therefore, according to the present embodiment, a total of four types of films are used by using the two film forming chambers 35a and 35b. The film can be continuously formed under reduced pressure without exposure to the atmosphere.

  Next, the vacuum gate valve 45 of the film forming chamber 35b is opened, and the vacuum robot 36 is used to mount the semiconductor wafer W on which the four types of laminated films are formed and the tray 22 on which the mask 23 is placed and supported. After being taken out from 35b to the vacuum transfer chamber 33, the vacuum gate valve 42 of the load lock chamber 32 is opened, the arm of the vacuum robot 36 enters the load lock chamber 32, and the semiconductor wafer W and the mask 23 are placed and supported. The tray 22 is carried into the load lock chamber 32 under reduced pressure.

  The tray 22 on which the semiconductor wafer W and the mask 23 are placed and supported is supported in the load lock chamber 32 by a plurality of pins of a pusher mechanism provided in the load lock chamber 32.

  Then, the vacuum gate valve 42 of the load lock chamber 32 is closed and the atmospheric gate valve 41 is opened to release the inside of the load lock chamber 32 to the atmosphere. Thereafter, the arm of the atmospheric robot 14 is entered into the load lock chamber 32, and the tray 22 on which the semiconductor wafer W and the mask 23 are placed and supported is placed on the hand 14 a and taken out to the atmospheric loader area 12. Transport to the desorption mechanism 16.

  In the desorption mechanism 16, the deposited semiconductor wafer W stands by on the wafer support portion 25 of the tray 22 and is separated from the mask 23 in the vertical direction. The arm of the atmospheric robot 14 is moved under the semiconductor wafer W in a state where the semiconductor wafer W is lifted from the tray 22 by the pusher mechanism provided in the desorption mechanism 16, and then the hand is lowered by lowering the pusher mechanism. A semiconductor wafer W is placed on 14a. Then, the arm of the atmospheric robot 14 is moved to the cassette loading unit 13, and the semiconductor wafer W is returned to the cassette set there.

  In the present embodiment, in parallel with the film forming process in the film forming chambers 35a and 35b described above, the same film forming process is performed in the film forming chamber 35c and the film forming chamber 35d.

  That is, the semiconductor wafers W pre-processed in the pre-processing chamber 34 are sequentially transferred to the film forming chamber 35a and the film forming chamber 35c alternately, for example, and the semiconductor wafer W transferred to the film forming chamber 35a is as described above. After the first film and the second film are formed, the third film and the fourth film are formed by being transferred to the film formation chamber 35b. On the other hand, the semiconductor wafer W transferred to the film formation chamber 35c is formed with the first film and the second film in the film formation chamber 35c, and subsequently transferred to the film formation chamber 35d. The third film and the fourth film are formed.

  In each of the film forming chambers 35 a to 35 d, the semiconductor wafer W is cooled by a cooling mechanism such as a coolant channel built in the electrostatic chuck table 62 while being heated by a heater built in the electrostatic chuck table 62. While being sputtered, the film is formed. Whether to heat or cool the semiconductor wafer W is appropriately selected according to the type of film to be formed, the film forming conditions, and the like.

  In the above-described embodiment, the example in which the film formation process of the four types of laminated films of the first to fourth films is performed in parallel using two film formation chambers has been described. In the example illustrated in FIG. A total of four film forming chambers 35a to 35d are provided, and two targets 50 can be arranged in each film forming chamber 35a to 35d. Therefore, a total of eight different films can be formed on the semiconductor wafer W. Films can be continuously formed under reduced pressure. That is, when forming n types (n layers) of stacked films, if the number of targets per film forming chamber is m (≧ 2), the number of film forming chambers is the number of layers n. There is no need, and (n / m) is sufficient, and the size (footprint) of the entire apparatus can be reduced accordingly.

  Furthermore, for each target, a target having a size (diameter) similar to that of the semiconductor wafer is not formed so as to face the entire surface of the semiconductor wafer in parallel, but a target smaller than the diameter of the semiconductor wafer is formed. Since the surfaces are inclined and faced at a position deviated from the center of the surface, the size of the film formation chamber itself can be made compact even though a plurality of targets are provided. That is, according to the present embodiment, the number of film forming chambers and the size of each film forming chamber itself in the entire apparatus are realized, and a continuous film formation of a plurality of types of laminated films under reduced pressure is supported. it can. Further, by reducing the number of film forming chambers, the number of times the semiconductor wafer W is moved between the film forming chambers can be reduced, and the moving time can be reduced to improve the processing efficiency.

  When processing is performed in parallel in a plurality of film forming chambers, if there is a difference between the processing times, the rate is limited to the slowest processing time. By matching the processing time such as distributing the processing to each film forming chamber so that the waiting time of each semiconductor wafer W becomes as short as possible, for example, to match the other with the processing speed of the fastest semiconductor wafer W, The processing efficiency can be improved. At this time, since there are a plurality of sputtering sources in each film forming chamber, the degree of freedom in processing distribution is high, and the same processing is simply distributed to a plurality of film forming chambers, but the movement time between the film forming chambers is reduced. Therefore, the processing efficiency can be improved.

  In the above-described embodiment, the plurality of sputter sources 51 are selectively driven. However, as shown in FIG. 4A, the shutter 65 can be moved to a retreat position where none of the sputter sources 51 is shielded. A plurality of unshielded sputtering sources 51 may be simultaneously driven (voltage is applied). When each target material in the sputter source 51 driven simultaneously is the same material, the film forming speed can be improved. In addition, when a plurality of sputtering sources 51 of targets of different materials are simultaneously driven, a film of a compound or a mixture of these different materials can be formed on the semiconductor wafer W.

  The shutter 65 is not limited to being provided in common for each sputtering source 51, and a plurality of shutters 65 may be provided corresponding to each sputtering source 51 in accordance with the number of sputtering sources 51 as shown in FIG. 4B shows a state in which each shutter 65 is in the retracted position without shielding the corresponding sputtering source 51.

  Further, not only two sputtering sources 51 but also three or more sputtering sources 51 may be provided per film forming chamber. For example, FIG. 4C illustrates a case where three sputtering sources 51 are provided. FIG. 4C shows a configuration in which one shutter 65 shields any one of the three sputter sources 51 and the other two sputter sources 51 can be driven simultaneously. Three shutters 65 may be provided corresponding to each of the sputter sources 51, and any two of the three sputter sources 51 may be shielded so that only the remaining one can be driven. Of course, as shown in FIG. 4C, the three sputtering sources 51 may be driven simultaneously by moving the shutter 65 to the retracted position.

  Further, as the shutter, for example, a shutter 75 shown in FIG. 5 may be configured in a stacking or bellows shape of a fan that can expand and contract in the circumferential direction, and the shielding area may be changed by the expansion and contraction.

  In the present embodiment, the semiconductor wafer W is transported while being held by the tray 22 and the mask 23 as shown in FIG. For this reason, the impact on the semiconductor wafer W during conveyance can be mitigated, and in the case of a thin semiconductor wafer W, warping is likely to occur during heating, but the warpage is suppressed by being covered with the mask 23. be able to. Furthermore, since the semiconductor wafer W is covered with the mask 23, it is possible to prevent the semiconductor wafer W from jumping or dropping off from the tray 22 during the transfer.

  When the tray 22 and the mask 23 are not used, the semiconductor wafer W is placed directly on the hand (or finger) of each robot. In that case, the semiconductor wafer W is only placed on the robot hand by its own weight, and is not held by adsorption, but only the friction force generated by its own weight in the area where the semiconductor wafer W is in contact with the hand. It becomes. In particular, in the case of a thin semiconductor wafer W, since the weight is light, a large frictional resistance cannot be expected with the transfer method using the frictional resistance, and it is difficult to increase the transfer speed. In contrast, the tray 22 and the mask 23 have a sufficiently large weight compared to the semiconductor wafer W, and the semiconductor wafer W is transported on the robot hand together with the tray 22 and the mask 23 to increase the frictional resistance and transport. The speed can be increased and the total processing time can be reduced.

  The sputter deposition apparatus according to the present embodiment includes discrete semiconductor devices (individual semiconductor devices) such as power MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors), and light-emitting devices for power control. It is suitable for the film formation of the back electrode.

  A discrete semiconductor device is smaller in size of one chip than a memory device or a logic device, and can obtain a large number of chips from one wafer even if the wafer size (diameter) is relatively small. Therefore, the wafer size is smaller than that of memory devices and logic devices, and the product specifications are also lower than that of memory devices and logic devices. Discrete semiconductor devices using devices that are applicable to memory devices and logic devices are therefore used. Therefore, it is larger than necessary and has a high function, and it has not always been a usage pattern suitable for the device performance and price. That is, as a multi-chamber film forming apparatus for discrete semiconductor devices, a small and inexpensive apparatus suitable for film formation of discrete semiconductor devices is desired, rather than versatility applicable to memory devices and logic devices. It was rare. Therefore, in the present embodiment, in order to meet the demand, a multi-layer sputtering film that functions as a back electrode of a discrete semiconductor device is formed by a multi-chamber type sputtering film forming apparatus that is small and inexpensive by adopting the above-described configuration. A film can be formed.

The schematic diagram which shows the planar layout of the sputter film deposition apparatus which concerns on embodiment of this invention. The schematic diagram of the tray and mask for board | substrate conveyance used with the sputter film-forming apparatus. The schematic diagram which shows the structure in the film-forming chamber in the sputter film-forming apparatus. The schematic diagram which illustrates the planar layout of the some sputter | spatter source and shutter in the sputter film-forming apparatus. FIG. 3 is a schematic view illustrating a planar layout of a plurality of sputtering sources and an area variable shutter in the sputter deposition apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 11 ... Atmospheric loader unit, 12 ... Atmospheric loader area, 13 ... Cassette loading part, 15 ... Substrate holder setting part, 16 ... Desorption mechanism, 22 ... Tray, 23 ... Mask, 31 ... Vacuum processing unit, 32 ... Load lock chamber 33 ... Vacuum transfer chamber, 34 ... Pretreatment chamber, 35, 35a-35d ... Film formation chamber, 41 ... Air gate valve, 42-47 ... Vacuum gate valve, 50 ... Target, 51 ... Sputter source, 58 ... Pusher mechanism 62 ... Electrostatic chuck table, 62a ... Electrostatic adsorption surface, 63 ... Shutter mechanism, 65, 75 ... Shutter

Claims (9)

An atmospheric loader area;
A cassette loading unit that is provided facing the atmospheric loader area and into which a cassette capable of accommodating a substrate is loaded;
A desorption mechanism that faces the atmospheric loader area and desorbs the substrate from a substrate holder;
A load lock chamber provided adjacent to the atmospheric loader area via an atmospheric gate valve;
An atmospheric robot which is provided in the atmospheric loader area and carries the substrate in and out of the cassette loading unit, the detaching mechanism and the load lock chamber;
A vacuum transfer chamber provided adjacent to the load lock chamber via a first vacuum gate valve;
A pretreatment chamber that is provided adjacent to the vacuum transfer chamber via a second vacuum gate valve and in which pretreatment is performed on the substrate before film formation under reduced pressure;
A plurality of film formation chambers provided adjacent to the vacuum transfer chamber via a third vacuum gate valve, wherein a sputter film formation process is performed on the substrate under reduced pressure;
A vacuum robot that is provided in the vacuum transfer chamber and carries the substrate in and out of the load lock chamber, the pretreatment chamber, and the film formation chambers under reduced pressure;
With
Each of the film forming chambers is provided with an electrostatic chuck table that can rotate while electrostatically attracting the substrate,
A plurality of sputtering sources are provided for each film forming chamber, and each of the sputtering sources is equipped with a target that is opposed to the electrostatic chucking surface of the electrostatic chuck table in an inclined state,
Each of the film forming chambers is provided with a shutter capable of shielding at least one of the plurality of sputtering sources from a discharge space in the film forming chamber.   2. The sputter deposition apparatus according to claim 1, wherein a sputter source not shielded by the shutter is driven among the plurality of sputter sources, and a sputter source shielded by the shutter is not driven.   The sputter deposition apparatus according to claim 1, wherein the shutter is movable to a retreat position where none of the plurality of sputter sources is shielded.   The sputter deposition apparatus according to claim 1, wherein the plurality of targets provided corresponding to one deposition chamber are made of different materials. In the pretreatment chamber, there is provided an electrostatic chuck table having a built-in heating mechanism for electrostatically adsorbing the substrate and heating the adsorbed substrate,
The sputter deposition apparatus according to claim 1, wherein the substrate is heat-treated in the pretreatment chamber.   6. The substrate according to claim 1, wherein the substrate is supported by a cathode body in the pretreatment chamber, and the substrate is sputter-etched by applying a voltage to the cathode body. Sputter deposition system. A mechanism for heating or cooling the substrate adsorbed on the electrostatic adsorption surface is incorporated in the electrostatic chuck table in each film forming chamber,
The sputter film forming apparatus according to claim 1, wherein the substrate is sputtered while being heated or cooled by the electrostatic chuck table. The substrate is transported through the atmospheric loader area, the load lock chamber, and the vacuum transfer chamber together with the substrate holder while being held by the substrate holder, and is carried into the pretreatment chamber and the film formation chamber,
8. The substrate according to claim 1, wherein the substrate is electrostatically adsorbed to the electrostatic adsorption surface in a state of being out of the holding of the substrate holder in the pretreatment chamber and the film forming chamber. The sputter film forming apparatus described in 1.   The sputter deposition apparatus according to claim 8, wherein the substrate holder includes a ring-shaped tray that supports an outer edge portion of the substrate, and a ring-shaped mask that covers the outer edge portion of the substrate.

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