JP2009068075A - Film-forming apparatus and film-forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-forming apparatus which can improve film quality and film thickness controllability by stabilizing a pre-sputtering process, and to provide a film-forming method. <P>SOLUTION: A shutter sheet 15 includes: a shielding face 15U which is provided in between a target 18 and the shutter sheet 15 in a rotating path R and shields the target 18; and a recess part 15B which is provided in between the target 18 and the shutter sheet 15 in the rotating path R and is recessed towards a substrate S side. The shutter sheet 15 makes the recess part 15B face to the target 18 when the target 18 is pre-sputtered, and makes its aperture 15A face to the target 18 when the target 18 is seriously sputtered. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a film forming apparatus and a film forming method.

  In a manufacturing process of a semiconductor device or a magnetic device, as a film forming apparatus for forming a thin film by sputtering a sputtering target (hereinafter simply referred to as a target) with ions and depositing sputtered particles scattered from the target on the substrate surface. Sputtering devices are widely used. In such a sputtering apparatus, when different film forming processes are performed in one sputtering space, a substance different from the target material is adhered to the surface of the target. Since the deposits adhering to the target are scattered every time the sputtering process is executed, contamination between different processes (hereinafter simply referred to as cross-contamination) is caused. Therefore, various proposals for avoiding such cross-contamination have been conventionally made in the sputtering apparatus.

  In Patent Document 1, a dome-shaped shielding means for partitioning a film formation space is rotatably disposed between a substrate stage and a target, and contaminants remaining in the film formation space are shielded from the target. To do. Then, the sputtering apparatus rotates the shielding means when sputtering the target, and the shielding of the target is released by making the opening of the shielding means face the target. Thus, Patent Document 1 can avoid cross contamination between processes and stabilize film characteristics in each film forming process.

As a sputtering apparatus, a multi-source sputtering apparatus is known in which a plurality of targets are mounted and a plurality of different film types are stacked, or a multi-component film type is formed. In a multi-source sputtering apparatus, since a plurality of different target materials coexist in one sputtering space, there is a risk of cross contamination between targets. Therefore, in a multi-source sputtering apparatus, conventionally, a shutter plate as the shielding means is provided between a plurality of targets and a substrate, and only a target facing the opening of the shutter plate is selectively sputtered, so that Cross contamination is avoided.
JP 2006-307303 A

  In the sputtering apparatus, preliminary sputtering (hereinafter simply referred to as pre-sputtering) is performed before the main sputtering is performed in order to clean the target surface in the initial stage of film formation. In the preliminary sputtering, the target is sputtered and the surface layer of the target is sputtered without depositing sputtered particles on the substrate. Thereby, in the sputtering apparatus, the target surface can be cleaned without forming a thin film on the substrate, and the target state in the initial stage of film formation can be stabilized. As a result, the reproducibility regarding the film quality and film thickness of the thin film formed on the substrate can be improved.

When pre-sputtering is performed, discharge is started in a state where the front of the target is shielded by a shutter plate, that is, discharge is started with a plate-like structure larger than the target facing the target. Therefore, the discharge state at the time of pre-sputtering has a large difference in the cathode / anode ratio and the plasma impedance greatly compared to the discharge state at the time of film formation, and the discharge is performed in a low pressure region of less than 0.2 Pa. Stability is not good. In particular, when the shutter is used, the distance between the shutter plate and the target is set to be very narrow in order to suppress cross contamination, so that the impedance between the main sputtering impedance and the pre-sputtering impedance is extremely low. It makes a big difference. As a result, in the sputtering apparatus, the discharge state during pre-sputtering, that is, the degree of cleaning of the target may vary, and reproducibility may be impaired with respect to the film quality and film thickness of the thin film.

  The present invention has been made to solve the above problems, and its object is to provide a film forming apparatus and a film forming method in which film quality and film thickness controllability are improved by stabilizing preliminary sputtering. There is to do.

  In order to achieve the above object, a film forming apparatus according to claim 1 is provided with a shutter plate that has an opening and rotates on the substrate, and is disposed on the shutter plate and faces the rotation path of the opening. The shutter plate is provided in the rotation path, and a distance between the target and the shutter plate is from a first distance for shielding the target. And a pre-sputtering portion provided in the rotation path and having a second distance larger than the first distance, the distance between the target and the shutter plate. To do.

  According to the film forming apparatus of the first aspect, the target is shielded when facing the shielding portion of the shutter plate, and enables preliminary sputtering when facing the preliminary sputtering portion of the shutter plate. Accordingly, the film forming apparatus can selectively execute shielding, preliminary sputtering, and main sputtering with respect to the target only by rotating the shutter plate. Therefore, this film-forming apparatus can suppress target contamination and can smoothly perform target preliminary sputtering. As a result, the film forming apparatus can perform the main sputtering smoothly, and as a result, the film quality and film thickness controllability of the thin film can be improved.

  The film forming apparatus according to claim 2 is the film forming apparatus according to claim 1, wherein the film forming apparatus includes a plurality of targets facing the rotation path, and the opening is selected from each of the plurality of targets. The preliminary sputtering unit is selectively opposed to each of the plurality of targets.

  According to the film forming apparatus of the second aspect, each of the plurality of targets is shielded when facing the shielding portion, and enables preliminary sputtering when facing the preliminary sputtering portion. Each of the plurality of targets enables the main sputtering when facing the opening. Therefore, the film forming apparatus can selectively execute shielding, preliminary sputtering, and main sputtering for each of the plurality of targets by simply rotating the shutter plate. Therefore, this film forming apparatus can suppress contamination between targets, and can selectively perform pre-sputtering on each of a plurality of targets. As a result, the film forming apparatus can perform the main sputtering smoothly, and as a result, the film quality and film thickness controllability of the thin film formed using a plurality of targets can be improved.

  The film forming apparatus according to claim 3 is the film forming apparatus according to claim 2, wherein the shutter plate has the opening at a position facing one of the targets and faces the other target. The gist of the present invention is to have the preliminary sputter part at the position to be operated.

  According to the film forming apparatus of the third aspect, when one target performs the main sputtering through the opening, the other target can perform the preliminary sputtering. Therefore, this film forming apparatus can perform the main sputtering and the preliminary sputtering in parallel. Therefore, this film forming apparatus can improve the film quality and the film thickness controllability of the thin film with high throughput. Can do.

  The film forming apparatus according to claim 4 is the film forming apparatus according to any one of claims 1 to 3, wherein the shutter plate includes the preliminary sputtering unit arranged in parallel with the opening. Is the gist.

  According to the film forming apparatus of the fourth aspect, since the opening and the preliminary sputtering part are arranged in parallel, the selected target can face the preliminary sputtering part immediately before facing the opening. Therefore, the selected target can perform the preliminary sputtering immediately before performing the main sputtering. Therefore, this film forming apparatus can improve the film quality and film thickness controllability of the thin film more reliably.

The film forming apparatus according to claim 5 is the film forming apparatus according to any one of claims 1 to 4, wherein the preliminary sputtering portion is a recess provided in the shielding portion. And
According to the film forming apparatus of the fifth aspect, when performing the preliminary sputtering, the target is surrounded by the shielding portion on the substrate side. Therefore, this film forming apparatus can more effectively suppress the contamination of the target when the target is pre-sputtered.

  A film forming apparatus according to claim 6 is the film forming apparatus according to any one of claims 1 to 5, wherein the film forming apparatus includes a shield that surrounds an outer periphery of the target, and the preliminary sputtering unit includes the shield. The gist of the present invention is that it is a cylindrical recess having the same inner diameter as that of the cylindrical recess provided in the shielding part.

  According to the film forming apparatus of the sixth aspect, when performing the preliminary sputtering, the target can cover the substrate side of the target with the shield and the cylindrical concave portion (preliminary sputtering portion). Therefore, this film forming apparatus can more reliably suppress the contamination of the target when performing the preliminary sputtering. Therefore, this film forming apparatus can improve the film quality and film thickness controllability of the thin film more reliably.

  In order to achieve the above object, the film forming method according to claim 7, wherein a shutter plate having an opening is rotated on a substrate, and the opening is opened with respect to a target disposed on a rotation path of the opening. A film forming method in which a thin film is formed on the substrate by sputtering the target through the opening, and the target is provided between the target and provided in the rotation path of the shutter plate. A step of shielding the target by causing a shielding portion having a first distance to shield the target to face the target; and the first portion provided between the target and the rotation path provided in the shutter plate. Pre-sputtering the target by facing a pre-sputtering portion having a second distance greater than the distance to the target; Jitter was the opening to face the said target and a step of forming a thin film on the substrate by the sputtering said target, and summarized in that.

  According to the film forming method of claim 7, by making the target and the shielding portion face each other, the target is shielded, and by rotating the shutter plate to make the target and the preliminary sputtering portion face each other, The target is pre-sputtered. Therefore, since this film-forming method can shield each of a plurality of targets only by rotating the shutter plate, contamination between the targets can be suppressed. And this film-forming method can perform smoothly each preliminary | backup sputtering of a some target, and this sputtering, and can improve the film quality and film thickness controllability of a thin film by extension.

  As described above, according to the present invention, it is possible to provide a film forming apparatus and a film forming method in which film quality and film thickness controllability are improved by stabilizing preliminary sputtering.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings. FIG. 1 is a side sectional view schematically showing a sputtering apparatus 10 as a film forming apparatus, and FIG. 2 is a perspective view showing a shutter plate 15.

  In FIG. 1, the sputtering apparatus 10 has a vacuum chamber (chamber body 11) connected to an exhaust system PU composed of a vacuum pump or the like, and carries a substrate S transported from the outside into the chamber body 11. As the substrate S, for example, a disk-shaped silicon substrate, a glass substrate, an AlTiC substrate, or the like can be used.

  A gas supply system 12 for supplying a sputtering gas is connected to the chamber body 11, and a sputtering gas having a predetermined flow rate is supplied from the gas supply system 12. Ar, Kr, Xe, or the like can be used as the sputtering gas. Further, the sputtering gas may be configured to include a reaction gas such as nitrogen or carbon monoxide.

  A disc-shaped substrate holder 13 for placing the substrate S is disposed inside the chamber body 11, and the substrate holder 13 positions and fixes the substrate S carried into the chamber body 11. The substrate holder 13 is connected to a drive shaft of a holder motor MH disposed below the chamber body 11 and receives the driving force from the holder motor MH, so that the substrate S is moved around the center of the substrate S. Rotate. In the present embodiment, a vertical line including the center of the substrate S is referred to as a central axis C.

  Inside the chamber main body 11, a plurality of adhesion preventing plates 14 covering the outer peripheral surface of the substrate holder 13 and the inner peripheral surface of the chamber main body 11 are disposed. The adhesion of sputtered particles to the surface and the inner wall of the chamber body 11 is suppressed.

  A dome-shaped shutter plate 15 that covers the upper portion of the substrate holder 13 is disposed inside the chamber body 11. The shutter plate 15 is a plate material that divides the internal space of the chamber body 11 (hereinafter simply referred to as a film forming space 11S) in the vertical direction, and is a circular hole (hereinafter simply referred to as an opening) that penetrates the film forming space 11S in the vertical direction. 15A) and a bottomed cylindrical concave portion (hereinafter simply referred to as a concave portion 15B) that is recessed toward the substrate S. The shutter plate 15 is connected to a drive shaft of a shutter motor MS disposed above the chamber body 11 and receives a driving force from the shutter motor MS, thereby rotating around the central axis C.

  In FIG. 1, for convenience of describing the entire shutter plate 15, the arrangement positions of the openings 15 </ b> A and the recesses 15 </ b> B are schematically shown. However, as illustrated in FIG. 2, the openings 15 </ b> A and the recesses 15 </ b> B of the present embodiment are Are arranged in parallel on the shutter plate 15, respectively. In the present embodiment, the locus of the opening 15A that moves with the rotation of the shutter plate 15 is referred to as a rotation path R (see FIG. 3).

  A plurality of cathodes 16 are mounted on the upper side of the chamber body 11. Each of the plurality of cathodes 16 includes a backing plate 17, a target 18 mounted on the substrate S side of the backing plate 17, and a magnetic device AM facing the target 18 with the backing plate 17 interposed therebetween.

  Each backing plate 17 supports and fixes the corresponding target 18, and positions and fixes each target 18 on the upper portion of the chamber body 11. Each backing plate 17 is connected to an external power supply G, and supplies a predetermined direct current or alternating current power from the external power supply G to the target 18.

Each target 18 is formed in a disc shape and has an inner surface (hereinafter simply referred to as a target surface 18 a) that is inclined with respect to the surface Sa (horizontal plane in the present embodiment) of the substrate S. The target surface 18a of each target 18 is disposed at a position facing the opening 15A or the recess 15B when the shutter plate 15 rotates. In the present embodiment, the normal line of each target surface 18a is set as the target axis A1, and the angle formed between each target axis A1 and the central axis C is referred to as an inclination angle.

  In FIG. 1, for convenience of describing the plurality of cathodes 16, the arrangement positions of the two targets 18 are schematically shown. However, as shown in FIG. At a position facing the rotation path R, they are equally arranged at a predetermined angle (in this embodiment, 120 °: hereinafter simply referred to as a rotation angle θ).

  On the outer periphery of each target 18, an earth shield 19 formed in a ring shape is disposed over the entire periphery of the target 18. Each earth shield 19 has a convex portion 19a extending along the target axis A1 over the entire circumference of the target 18, and the entire target surface 18a is covered with the shielding surface 15U (see FIG. 2) of the shutter plate 15 and the convex portion 19a. And cover with. The distance between the convex portion 19a and the shielding surface 15U is a distance (for example, several mm) for shielding the target 18 from the film formation space 11S.

  Each magnetic device AM has a magnetic circuit SM that faces the backing plate 17, and the magnetic circuit SM forms a magnetron magnetic field on the target surface 18 a of the target 18 that faces the backing plate 17. Each magnetic circuit SM is connected to the drive shaft of the rotation motor MR, receives the driving force from the corresponding rotation motor MR, rotates in the circumferential direction of the opposing target surface 18a, and the target surface 18a. A desired magnetron magnetic field is formed along

  Next, the opening 15A, the recess 15B, and the target 18 will be described in detail below. 3A and 3B are views of the shutter plate 15 and each target 18 as viewed from the substrate S, respectively. FIG. 4A is a plan view of the shutter plate 15 as viewed from the substrate S, FIG. 4B is an end view taken along line AA of FIG. 4A and shows the opening 15A, and FIG. ) Is an end view taken along line B-B in FIG. 4A and shows a recess 15B.

  In FIG. 3A, a substantially annular rotation path R (two-dot chain line shown in FIG. 3) centering on the central axis C is virtually partitioned on the inner surface 15 </ b> I of the shutter plate 15. The rotation path R is a path of the opening 15A that rotates about the central axis C.

  A recess 15B is provided in parallel in the vicinity of the opening 15A in the rotation path R. The recess 15B has a diameter common to the inner diameter of the opening 15A (hereinafter simply referred to as the opening diameter D). The recess 15B rotates along the rotation path R when the shutter plate 15 rotates in the direction of the arrow in FIG. 3A, and the opening 15A rotates following the recess 15B.

  In the present embodiment, the shielding surface 15U in the rotation path R constitutes a shielding part, and the recess 15B in the rotation path R constitutes a preliminary sputtering part. That is, in this embodiment, the preliminary sputter part is surrounded by the shielding part.

  In FIG. 3 (b), the target surfaces 18 a of the three targets 18 are equally arranged in portions facing the rotation path R, respectively. These three target surfaces 18a are shielded surfaces 15U (see FIG. 2) of the shutter plate 15 until the shutter plate 15 faces the recess 15B on the target axis A1 when the shutter plate 15 rotates in the direction of the arrow in FIG. ) And the opening 15A immediately after the recess 15B.

  In FIG. 3B, the projections 19 a of the three earth shields 19 each have a ring shape over the entire circumference of the target 18, and the inner diameter is formed with the opening diameter D. When the shutter plate 15 rotates in the direction of the arrow in FIG. 3A, these three convex portions 19a face the shielding surface 15U of the shutter plate 15 until they face the concave portion 15B on the target axis A1. During this time, the convex portion 19a covers the target surface 18a surrounded by the convex portion 19a with the earth shield 19 and the shielding surface 15U, and shields the target surface 18a from the film formation space 11S.

  The three convex portions 19a face the concave portion 15B at different timings when the shutter plate 15 rotates in the direction of the arrow in FIG. At this time, the convex portion 19a covers the target surface 18a surrounded by the convex portion 19a with the earth shield 19 and the concave portion 15B, and shields the target surface 18a from the film formation space 11S. At this time, the target surface 18a is shielded by a space that is as large as the volume of the recess 15B.

  The three protrusions 19a face the opening 15A at different timings when the shutter plate 15 rotates in the direction of the arrow in FIG. At this time, the convex portion 19a opens the target surface 18a surrounded by the convex portion 19a to the film formation space 11S.

  FIG. 4B shows a state where the target 18 and the opening 15A face each other. In FIG. 4B, the target 18 scatters the sputtered particles from the target 18 toward the substrate S when the cathode 16 corresponding to the target 18 is driven. At this time, most of the sputtered particles that contribute to film formation fly in a portion connecting the inner edge of the opening 15A and the outer edge of the substrate S. In the present embodiment, a three-dimensional space connecting the inner edge of the opening 15A and the outer edge of the substrate S is referred to as a deposition space F.

  FIG. 4C shows a state where the target 18 and the concave portion 15B face each other. In FIG. 4C, the target 18 is covered with the earth shield 19 and the recess 15B. Since the target 18 is formed with an opening diameter D in which the inner diameter of the convex portion 19a of the earth shield 19 and the inner diameter of the concave portion 15B are common, the target 18 is more reliably shielded from the film formation space 11S. The target 18 starts discharging between the target 18 and the recess 15B when the cathode 16 corresponding to the target 18 is driven. At this time, the target 18 increases the distance between itself and the shutter plate 15 by the depth of the recess 15B, so that the target 18 generates plasma more smoothly and stably than when facing the shielding surface 15U. Sputtered particles from the target 18 are scattered in a space surrounded by the earth shield 19 and the recess 15B. That is, most of the sputtered particles from the target 18 are deposited on the bottom of the recess 15B without scattering into the film formation space 11S.

  In the present embodiment, the depth of the recess 15B is referred to as a discharge gap H. The discharge gap H is determined according to the pressure between the target 18 and the recess 15B, the gas type between the target 18 and the recess 15B, and the like, and the discharge of the target 18 is started smoothly. For the distance. The discharge gap H is a distance that does not allow the bottom of the recess 15B to enter the deposition space F, that is, a distance that does not hinder the flight of sputtered particles that contribute to film formation by the bottom of the recess 15B.

  When the sputtering apparatus 10 starts a film forming process on the substrate S, first, the substrate S is carried into the chamber body 11, and the substrate S is placed on the substrate holder 13 and rotated. Further, the sputtering apparatus 10 introduces the sputtering gas from the gas supply system 12 into the film forming space 11S and adjusts the pressure in the film forming space 11S to a predetermined pressure.

Next, the sputtering apparatus 10 rotates the shutter plate 15 so that the target 18 to be selected (hereinafter simply referred to as the selected target) and the recess 15B face each other, and the target 18 and the shielding surface 15U that are not selected are made to face each other. Make them face each other. Thereby, the sputtering apparatus 10 selectively shields only the selected target with the recess 15B, and shields the other two targets 18 with the shielding surface 15U.

  The sputtering apparatus 10 drives the cathode 16 corresponding to the selected target to form a magnetron magnetic field on the target surface 18a of the selected target, and applies a predetermined direct current or alternating voltage to the target surface 18a. As a result, the sputtering apparatus 10 starts discharging only between the target surface 18a of the selected target and the recess 15B, and executes pre-sputtering of the target surface 18a in a smooth and stable state. During the pre-sputtering, most of the sputtered particles from the target surface 18a are deposited on the bottom of the recess 15B without being scattered in the film formation space 11S. Contamination can be avoided.

  When the pre-sputtering is performed for a predetermined process time, the sputtering apparatus 10 stops the cathode 16 and rotates the shutter plate 15 to retract the concave portion 15B from the position facing the selected target, and the selected target and the opening 15A. Facing each other. Further, the unselected target 18 and the shielding surface 15U are opposed to each other. Thereby, the sputtering apparatus 10 opens only the target surface 18a of the selected target to the film formation space 11S, and shields the other two targets 18 with the shielding surface 15U. At this time, the sputtering apparatus 10 can reduce the rotation angle of the shutter plate 15 by the amount that the concave portion 15B and the opening 15A are arranged in parallel, and can perform the opening / closing operation of the shutter plate 15 in a short time. .

Then, the sputtering apparatus 10 drives the cathode 16 corresponding to the selected target to form a magnetron magnetic field again on the target surface 18a of the selected target, and reapply a predetermined direct current or alternating voltage to the target surface 18a. Thereby, the sputtering apparatus 10 starts discharge between the target surface 18a of the selected target and the film formation space 11S, and performs the main sputtering using the cleaned target surface 18a. Since the other two targets 18 are shielded by the shutter plate 15 during the main sputtering, the sputtered particles from the selected target can avoid cross contamination between the targets 18.
Example 1
Pre-sputtering was performed with the target 18 and the recess 15B facing each other under the following conditions, and the DC discharge voltage during pre-sputtering was measured as Example 1. The DC discharge voltage of Example 1 dropped by about 2 to 5 V after 2 to 3 seconds from the start of discharge. By this pre-sputtering, cleaning of the target surface 18a was recognized, and it was recognized that the pre-sputtering can be executed smoothly and stably.
(Pre-sputtering conditions)
・ Target: Cu target ・ Sputtering time: 30 seconds ・ Sputtering DC power: 300 W
Sputtering pressure: 0.02 Pa to 0.06 Pa
Although the measurement of the DC discharge voltage was attempted by making the target 18 and the shielding surface 15U face each other and making the other conditions the same as in Example 1, a sufficient discharge phenomenon could not be obtained. When the target 18 and the shielding surface 15U are opposed to each other, in order to obtain a discharge phenomenon, the sputtering pressure must be changed to at least 0.2 Pa or more, and a pressure greatly different from the sputtering pressure of this sputtering is required. A large pressure fluctuation occurs between the sputter and the main sputter. That is, in the pre-sputtering in which the target 18 and the shielding surface 15U are opposed to each other, the initial film becomes unstable. Moreover, even under these conditions, it was recognized that it takes about 10 seconds for the discharge voltage to decrease by 2 to 5 V and become stable.
(Example 2)
Pre-sputtering was performed with the target 18 and the recess 15B facing each other under the following conditions, and the reflected wave of high-frequency power during pre-sputtering was measured as Example 2. The reflected wave of high-frequency power in Example 2 dropped to 0 W after about 5 seconds from the start of discharge. By this pre-sputtering, cleaning of the target surface 18a was recognized, and it was recognized that the pre-sputtering can be executed smoothly and stably.
(Pre-sputtering conditions)
・ Target: SiO ₂ target ・ Sputtering time: 30 seconds ・ Sputtering high frequency power: 500 W
Sputtering pressure: 0.02 Pa to 0.06 Pa
Although the measurement of the DC discharge voltage was attempted by making the target 18 and the shielding surface 15U face each other and making the other conditions the same as in Example 1, a sufficient discharge phenomenon could not be obtained. When the target 18 and the shielding surface 15U are opposed to each other, in order to obtain a discharge phenomenon, the sputtering pressure must be changed to at least 0.2 Pa or more, and a pressure greatly different from the sputtering pressure of this sputtering is required. A large pressure fluctuation occurs between the sputter and the main sputter. That is, in the pre-sputtering in which the target 18 and the shielding surface 15U are opposed to each other, the initial film becomes unstable. Moreover, even under these conditions, it was recognized that it takes about 10 seconds for the discharge voltage to decrease by 2 to 5 V and become stable.

Next, effects of the present embodiment configured as described above will be described below.
(1) In the above-described embodiment, the shutter plate 15 has the shielding surface 15U that is provided in the rotation path R and shields the target 18 between the target 18 and the shutter plate 15, and the rotation path. A recess 15 </ b> B that is provided in R and is recessed toward the substrate S between the target 18 and the shutter plate 15. The shutter plate 15 opposes the recess 15B and the target 18 when performing the pre-sputtering of the target 18, and opposes the opening 15A and the target 18 when performing the main sputtering of the target 18.

  Therefore, the sputtering apparatus 10 can selectively execute shielding, pre-sputtering, and main sputtering with respect to the target 18 only by rotating the shutter plate 15. Therefore, the sputtering apparatus 10 can suppress the cross contamination of the target 18 and can smoothly execute the pre-sputtering of the target 18.

  (2) In the above embodiment, the shutter plate 15 has the recess 15B arranged in parallel with the opening 15A. Accordingly, the sputtering apparatus 10 can face the selected target and the recess 15B immediately before facing the selected target and the opening 15A. Therefore, the sputtering apparatus 10 can perform pre-sputtering immediately before performing the main sputtering. As a result, the sputtering apparatus 10 can more reliably improve the film quality and film thickness controllability of the thin film.

In addition, you may change the said embodiment as follows.
In the above-described embodiment, the example in which the opening 15A and the recess 15B are provided in parallel with the rotation path R has been described. For example, as illustrated in FIG. 5, the opening 15 </ b> A and the recess 15 </ b> B may not be described in parallel, and the opening 15 </ b> A and the recess 15 </ b> B may be opposed to different targets 18. May be.

  According to this configuration, the sputtering apparatus 10 can perform preliminary sputtering on the other target 18 when performing the main sputtering of the selected target. Therefore, since the main sputtering and the preliminary sputtering can be performed in parallel, the throughput can be improved as compared with the case where the main sputtering and the preliminary sputtering are serially processed.

  In the above embodiment, an example in which only one recess 15B is provided has been described. For example, as illustrated in FIG. 6, a plurality of recesses 15 </ b> B may be provided in the rotation path R. Further, when the quantity of the target 18 is Nt, the quantity of the opening 15A is Nm, and the quantity of the recess 15B is Nb, Nb = Nt−Nm may be satisfied. The structure which opposes may be sufficient.

  According to this configuration, the sputtering apparatus 10 can perform preliminary sputtering with respect to the plurality of targets 18 excluding the selected target at substantially the same timing. Accordingly, it is possible to expand the condition range of the preliminary sputtering, and to expand the degree of freedom of conditions (for example, the rotation direction and rotation speed of the shutter plate 15) when shifting from the preliminary sputtering to the main sputtering. Can do.

  In the above embodiment, the sputtering apparatus 10 may have a drive mechanism for moving the shutter plate 15 up and down and change the distance between the target 18 and the recess 15B. According to this configuration, the adjustment range of impedance in pre-sputtering can be expanded.

  In the above embodiment, the sputtering apparatus 10 stops the cathode 16 during the transition from preliminary sputtering to main sputtering. Not limited to this, the sputtering apparatus 10 may be configured to continuously drive the cathode 16 during the transition from the preliminary sputtering to the main sputtering.

  In the above embodiment, the oblique incidence type sputtering apparatus 10 in which the target surface 18a is inclined with respect to the surface of the substrate S has been described. For example, in the sputtering apparatus 10, the target surface 18 a and the surface of the substrate S may be parallel.

Sectional drawing which shows a film-forming apparatus typically. The perspective view which shows a shutter board | plate. (A) And (b) is a top view which shows a shutter plate and a target, respectively. (A)-(c) is a figure which shows the relationship between the recessed part and opening in a shutter board, respectively. The top view which shows the shutter board | plate of the example of a change. The top view which shows the shutter board | plate of the example of a change.

Explanation of symbols

  R: rotation path, S: substrate, 10: sputtering apparatus as a film forming apparatus, 15: shutter plate, 15A: opening, 15B: recess, 18 ... target.

Claims (7)

A film forming apparatus having a shutter plate having an opening and rotating on a substrate; and a target disposed on the shutter plate and facing a rotation path of the opening,
The shutter plate is
A shielding portion provided in the rotation path, wherein a distance between the target and the shutter plate is a first distance for shielding the target;
A pre-sputter unit provided in the rotation path and having a second distance larger than the first distance, the distance between the target and the shutter plate;
A film forming apparatus characterized by the above. The film forming apparatus according to claim 1,
A plurality of targets facing the rotation path;
The opening selectively faces each of the plurality of targets;
The pre-sputtering unit selectively faces each of the plurality of targets. The film forming apparatus according to claim 2,
The shutter plate is
A film forming apparatus, comprising: the opening at a position facing one of the targets; and the preliminary sputtering unit at a position facing the other target. It is the film-forming apparatus as described in any one of Claims 1-3,
The shutter plate is
A film forming apparatus comprising the preliminary sputtering unit arranged in parallel with the opening. It is the film-forming apparatus as described in any one of Claims 1-4,
The preliminary sputtering part is
A film forming apparatus, wherein the film forming device is a recess provided in the shielding part. It is the film-forming apparatus as described in any one of Claims 1-5,
Having a shield surrounding the outer periphery of the target;
The preliminary sputtering part is
A film forming apparatus, wherein the film forming apparatus is a cylindrical recess having the same inner diameter as the inner diameter of the shield and provided in the shielding part. A thin film is formed on the substrate by rotating a shutter plate having an opening on the substrate, making the opening face the target facing the rotation path of the opening, and sputtering the target through the opening. A film forming method for
A step of shielding the target by making a shielding portion provided on the rotation path in the shutter plate and having a first distance between the target and the target facing the target;
Pre-sputtering the target by causing a pre-sputtering portion provided in the rotation path of the shutter plate and having a second distance larger than the first distance to face the target. ,
And a step of forming a thin film on the substrate by subjecting the target to the pre-sputtered target to perform the main sputtering of the target.

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