SG11201707780TA - Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method - Google Patents
Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming methodInfo
- Publication number
- SG11201707780TA SG11201707780TA SG11201707780TA SG11201707780TA SG11201707780TA SG 11201707780T A SG11201707780T A SG 11201707780TA SG 11201707780T A SG11201707780T A SG 11201707780TA SG 11201707780T A SG11201707780T A SG 11201707780TA SG 11201707780T A SG11201707780T A SG 11201707780TA
- Authority
- SG
- Singapore
- Prior art keywords
- lithography
- underlayer film
- forming
- composition
- forming method
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title 3
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C261/00—Derivatives of cyanic acid
- C07C261/02—Cyanates
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
- C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
- C07C39/15—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/78—Ring systems having three or more relevant rings
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D173/00—Coating compositions based on macromolecular compounds obtained by reactions forming a linkage containing oxygen or oxygen and carbon in the main chain, not provided for in groups C09D159/00 - C09D171/00; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Pyrane Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015078564 | 2015-04-07 | ||
PCT/JP2016/061397 WO2016163456A1 (fr) | 2015-04-07 | 2016-04-07 | Matériau de formation de film de sous-couche pour lithographie, composition pour la formation d'un film de sous-couche pour lithographie, film de sous-couche pour lithographie et procédé de formation de motif |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201707780TA true SG11201707780TA (en) | 2017-10-30 |
Family
ID=57073237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201707780TA SG11201707780TA (en) | 2015-04-07 | 2016-04-07 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method |
Country Status (8)
Country | Link |
---|---|
US (1) | US10359701B2 (fr) |
EP (1) | EP3282318A4 (fr) |
JP (1) | JP6673343B2 (fr) |
KR (1) | KR102515839B1 (fr) |
CN (1) | CN107430344B (fr) |
SG (1) | SG11201707780TA (fr) |
TW (1) | TW201708965A (fr) |
WO (1) | WO2016163456A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6515919B2 (ja) * | 2014-03-13 | 2019-05-22 | 三菱瓦斯化学株式会社 | レジスト組成物及びレジストパターン形成方法 |
WO2015137486A1 (fr) | 2014-03-13 | 2015-09-17 | 三菱瓦斯化学株式会社 | Composé, résine, matériau de formation de film de couche de base pour lithographie, film de couche de base pour lithographie, procédé de formation de motif, et procédé pour composé ou résine de raffinage |
KR102527656B1 (ko) | 2015-03-30 | 2023-05-02 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 레지스트 기재, 레지스트 조성물 및 레지스트 패턴 형성방법 |
KR102643950B1 (ko) | 2015-03-30 | 2024-03-07 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 화합물, 수지, 및 이들의 정제방법, 리소그래피용 하층막 형성재료, 하층막 형성용 조성물, 및 하층막, 그리고, 레지스트패턴 형성방법, 및 회로패턴 형성방법 |
TW201921121A (zh) * | 2017-09-19 | 2019-06-01 | 日商三菱瓦斯化學股份有限公司 | 半導體微影膜形成組成物,以及阻劑圖型形成方法及裝置 |
JP7248956B2 (ja) * | 2018-01-31 | 2023-03-30 | 三菱瓦斯化学株式会社 | 組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法 |
JP7469747B1 (ja) | 2023-07-27 | 2024-04-17 | 三菱瓦斯化学株式会社 | シアン酸エステル化合物及びその製造方法、樹脂組成物、並びに硬化物 |
JP7469748B1 (ja) | 2023-07-27 | 2024-04-17 | 三菱瓦斯化学株式会社 | シアン酸エステル化合物及びその製造方法、樹脂組成物、並びに硬化物 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3774668B2 (ja) | 2001-02-07 | 2006-05-17 | 東京エレクトロン株式会社 | シリコン窒化膜形成装置の洗浄前処理方法 |
JP3914493B2 (ja) | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
EP1592051A4 (fr) | 2003-01-24 | 2012-02-22 | Tokyo Electron Ltd | Procede de depot chimique en phase vapeur pour former un film de nitrure de silicium sur un substrat |
JP3981030B2 (ja) | 2003-03-07 | 2007-09-26 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
JP2005187335A (ja) * | 2003-12-24 | 2005-07-14 | Midori Kagaku Kenkyusho:Kk | 新規なシアネートエステルとその製造方法 |
JP4388429B2 (ja) | 2004-02-04 | 2009-12-24 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
JP4466854B2 (ja) * | 2005-03-18 | 2010-05-26 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP4781280B2 (ja) | 2006-01-25 | 2011-09-28 | 信越化学工業株式会社 | 反射防止膜材料、基板、及びパターン形成方法 |
JP4638380B2 (ja) | 2006-01-27 | 2011-02-23 | 信越化学工業株式会社 | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
WO2009069712A1 (fr) * | 2007-11-30 | 2009-06-04 | Nissan Chemical Industries, Ltd. | Composition contenant du silicium comprenant de l'isocyanato bloqué pour la formation de sous-couche de résist |
EP2219076B1 (fr) * | 2007-12-07 | 2013-11-20 | Mitsubishi Gas Chemical Company, Inc. | Composition pour former un film de base pour lithographie et procédé de formation de motif de résist multicouche |
JP5373335B2 (ja) * | 2008-08-08 | 2013-12-18 | 株式会社神戸製鋼所 | 冷凍装置 |
WO2011034062A1 (fr) | 2009-09-15 | 2011-03-24 | 三菱瓦斯化学株式会社 | Résine à base d'un hydrocarbure aromatique et composition destinée à former un film de sous-couche pour lithographie |
JP5266299B2 (ja) | 2010-12-01 | 2013-08-21 | 信越化学工業株式会社 | レジスト下層膜材料及びこれを用いたパターン形成方法 |
JP5485185B2 (ja) | 2011-01-05 | 2014-05-07 | 信越化学工業株式会社 | レジスト下層膜材料及びこれを用いたパターン形成方法 |
KR101907481B1 (ko) | 2011-08-12 | 2018-10-12 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 리소그래피용 하층막 형성재료, 리소그래피용 하층막 및 패턴형성방법 |
KR101821705B1 (ko) * | 2011-09-06 | 2018-01-25 | 주식회사 동진쎄미켐 | 페놀계 자가가교 고분자 및 이를 포함하는 레지스트 하층막 조성물 |
JP5859420B2 (ja) | 2012-01-04 | 2016-02-10 | 信越化学工業株式会社 | レジスト下層膜材料、レジスト下層膜材料の製造方法、及び前記レジスト下層膜材料を用いたパターン形成方法 |
CA2888963C (fr) | 2012-10-26 | 2021-06-08 | Mitsubishi Gas Chemical Company, Inc. | Procede de production d'halogenure de cyanogene, compose d'ester de cyanate et son procede de production, et composition de resine |
CN104981463B (zh) * | 2013-02-08 | 2018-04-13 | 三菱瓦斯化学株式会社 | 化合物、光刻用下层膜形成材料、光刻用下层膜及图案形成方法 |
JP6515919B2 (ja) | 2014-03-13 | 2019-05-22 | 三菱瓦斯化学株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP6646895B2 (ja) * | 2014-08-08 | 2020-02-14 | 三菱瓦斯化学株式会社 | リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法 |
JP6670453B2 (ja) * | 2015-02-12 | 2020-03-25 | 三菱瓦斯化学株式会社 | 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜、レジストパターン形成方法、回路パターン形成方法及び化合物又は樹脂の精製方法 |
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2016
- 2016-04-07 TW TW105110916A patent/TW201708965A/zh unknown
- 2016-04-07 JP JP2017511049A patent/JP6673343B2/ja active Active
- 2016-04-07 EP EP16776622.9A patent/EP3282318A4/fr not_active Withdrawn
- 2016-04-07 US US15/565,018 patent/US10359701B2/en active Active
- 2016-04-07 WO PCT/JP2016/061397 patent/WO2016163456A1/fr active Application Filing
- 2016-04-07 SG SG11201707780TA patent/SG11201707780TA/en unknown
- 2016-04-07 CN CN201680019414.6A patent/CN107430344B/zh not_active Expired - Fee Related
- 2016-04-07 KR KR1020177031716A patent/KR102515839B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR102515839B1 (ko) | 2023-03-30 |
KR20170135891A (ko) | 2017-12-08 |
US10359701B2 (en) | 2019-07-23 |
CN107430344B (zh) | 2021-03-26 |
US20180101096A1 (en) | 2018-04-12 |
EP3282318A1 (fr) | 2018-02-14 |
TW201708965A (zh) | 2017-03-01 |
EP3282318A4 (fr) | 2018-08-15 |
JPWO2016163456A1 (ja) | 2018-02-08 |
CN107430344A (zh) | 2017-12-01 |
JP6673343B2 (ja) | 2020-03-25 |
WO2016163456A1 (fr) | 2016-10-13 |
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