SG11201706660WA - Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin - Google Patents
Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resinInfo
- Publication number
- SG11201706660WA SG11201706660WA SG11201706660WA SG11201706660WA SG11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA
- Authority
- SG
- Singapore
- Prior art keywords
- lithography
- underlayer film
- resin
- forming
- compound
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/86—Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/02—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
- C07D405/04—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings directly linked by a ring-member-to-ring-member bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Indole Compounds (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Plural Heterocyclic Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015050731 | 2015-03-13 | ||
| PCT/JP2016/057438 WO2016147989A1 (ja) | 2015-03-13 | 2016-03-09 | 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜、パターン形成方法、及び、化合物又は樹脂の精製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201706660WA true SG11201706660WA (en) | 2017-09-28 |
Family
ID=56918793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201706660WA SG11201706660WA (en) | 2015-03-13 | 2016-03-09 | Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10577323B2 (zh) |
| EP (1) | EP3269712A4 (zh) |
| JP (1) | JP6028959B1 (zh) |
| KR (1) | KR20170128287A (zh) |
| CN (1) | CN107406383B (zh) |
| IL (1) | IL254447A0 (zh) |
| SG (1) | SG11201706660WA (zh) |
| TW (1) | TWI694996B (zh) |
| WO (1) | WO2016147989A1 (zh) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10133178B2 (en) | 2014-09-19 | 2018-11-20 | Nissan Chemical Industries, Ltd. | Coating liquid for resist pattern coating |
| JP2018091943A (ja) * | 2016-11-30 | 2018-06-14 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | 平坦化膜形成組成物、これを用いた平坦化膜およびデバイスの製造方法 |
| US20200002307A1 (en) * | 2017-02-28 | 2020-01-02 | Mitsubishi Gas Chemical Company, Inc. | Method for purifying compound or resin and method for producing composition |
| JP7064149B2 (ja) | 2017-03-10 | 2022-05-10 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターニングされた基板の製造方法 |
| JP2018154600A (ja) * | 2017-03-21 | 2018-10-04 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物、パターン形成方法及び精製方法 |
| KR102349937B1 (ko) * | 2017-03-27 | 2022-01-10 | 동우 화인켐 주식회사 | 하드마스크용 조성물 |
| JP7368791B2 (ja) * | 2017-07-14 | 2023-10-25 | 日産化学株式会社 | レジスト下層膜形成組成物、レジスト下層膜、レジストパターンの形成方法及び半導体装置の製造方法 |
| KR102389260B1 (ko) * | 2017-11-10 | 2022-04-20 | 동우 화인켐 주식회사 | 하드마스크용 조성물 |
| JP7207321B2 (ja) * | 2017-11-16 | 2023-01-18 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法、パターニングされた基板の製造方法並びに化合物 |
| JP6981945B2 (ja) | 2018-09-13 | 2021-12-17 | 信越化学工業株式会社 | パターン形成方法 |
| JP7161451B2 (ja) | 2019-07-05 | 2022-10-26 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、及びパターン形成方法 |
| KR102456165B1 (ko) * | 2020-03-10 | 2022-10-17 | 삼성에스디아이 주식회사 | 하드마스크 조성물 및 패턴 형성 방법 |
| JP2024116011A (ja) | 2023-02-15 | 2024-08-27 | 信越化学工業株式会社 | パターン形成方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA941222A (en) | 1970-03-16 | 1974-02-05 | Horizons Research Incorporated | Polyvinylcarbazole photographic systems |
| LU76074A1 (zh) * | 1976-10-26 | 1978-05-16 | ||
| CH645306A5 (de) * | 1980-04-16 | 1984-09-28 | Ciba Geigy Ag | Verfahren zur herstellung von konzentrierten loesungen von farbbildern. |
| JPS6057340A (ja) * | 1983-09-08 | 1985-04-03 | Fuji Photo Film Co Ltd | 焼出し性組成物 |
| DE3923426A1 (de) * | 1989-07-15 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung von novolak-harzen mit geringem metallionengehalt |
| DE3940478A1 (de) * | 1989-12-07 | 1991-06-13 | Bayer Ag | Bis-triarylmethanverbindungen |
| JPH10152636A (ja) * | 1991-05-30 | 1998-06-09 | Ricoh Co Ltd | 磁性インク |
| JP3774668B2 (ja) | 2001-02-07 | 2006-05-17 | 東京エレクトロン株式会社 | シリコン窒化膜形成装置の洗浄前処理方法 |
| JP2003300922A (ja) * | 2002-04-08 | 2003-10-21 | Honshu Chem Ind Co Ltd | トリメチロール化トリフェノール類 |
| JP3914493B2 (ja) | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
| KR100771800B1 (ko) | 2003-01-24 | 2007-10-30 | 도쿄 엘렉트론 가부시키가이샤 | 피처리 기판 상에 실리콘 질화막을 형성하는 ｃｖｄ 방법 |
| JP3981030B2 (ja) | 2003-03-07 | 2007-09-26 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
| JP4388429B2 (ja) | 2004-02-04 | 2009-12-24 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
| JP4659678B2 (ja) * | 2005-12-27 | 2011-03-30 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
| JP4781280B2 (ja) | 2006-01-25 | 2011-09-28 | 信越化学工業株式会社 | 反射防止膜材料、基板、及びパターン形成方法 |
| JP4638380B2 (ja) | 2006-01-27 | 2011-02-23 | 信越化学工業株式会社 | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
| TW200741353A (en) * | 2006-02-27 | 2007-11-01 | Mitsubishi Gas Chemical Co | Compound for forming antireflective film and antireflective film |
| JP4847426B2 (ja) * | 2007-10-03 | 2011-12-28 | 信越化学工業株式会社 | レジスト下層膜材料およびこれを用いたパターン形成方法 |
| EP2219076B1 (en) * | 2007-12-07 | 2013-11-20 | Mitsubishi Gas Chemical Company, Inc. | Composition for forming base film for lithography and method for forming multilayer resist pattern |
| SG176777A1 (en) * | 2009-06-19 | 2012-01-30 | Nissan Chemical Ind Ltd | Carbazole novolak resin |
| EP2479198B1 (en) | 2009-09-15 | 2016-02-17 | Mitsubishi Gas Chemical Company, Inc. | Aromatic hydrocarbon resin and composition for forming underlayer film for lithography |
| EP3062151B1 (en) * | 2011-08-12 | 2021-05-05 | Mitsubishi Gas Chemical Company, Inc. | Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom |
| US9316913B2 (en) * | 2011-08-12 | 2016-04-19 | Mitsubishi Gas Chemical Company, Inc. | Underlayer film-forming material for lithography, underlayer film for lithography, and pattern formation method |
| JP5958734B2 (ja) * | 2011-10-17 | 2016-08-02 | 三菱瓦斯化学株式会社 | 新規エポキシ化合物及びその製造方法 |
| US11674053B2 (en) * | 2013-09-19 | 2023-06-13 | Nissan Chemical Industries, Ltd. | Composition for forming underlayer film of self-assembled film including aliphatic polycyclic structure |
| CN105764892B (zh) * | 2013-11-29 | 2018-09-25 | 三菱瓦斯化学株式会社 | 化合物或树脂的精制方法 |
| KR102352289B1 (ko) * | 2014-04-17 | 2022-01-19 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 이를 이용한 디스플레이 기판의 제조 방법 |
| EP3346335A4 (en) * | 2015-08-31 | 2019-06-26 | Mitsubishi Gas Chemical Company, Inc. | MATERIAL FOR FORMING LITHOGRAPHY OF LAYER LAYERS, COMPOSITION FOR FORMING LITHOGRAPHY LAYER LAYERS, LITHOGRAPHY LAYERINGS AND METHOD FOR THE PRODUCTION THEREOF, PATTERN FORMULATION, RESIN AND CLEANING METHOD |
| JP7020912B2 (ja) * | 2015-08-31 | 2022-02-16 | 三菱瓦斯化学株式会社 | リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びその製造方法、並びにレジストパターン形成方法 |
-
2016
- 2016-03-09 WO PCT/JP2016/057438 patent/WO2016147989A1/ja active Application Filing
- 2016-03-09 EP EP16764819.5A patent/EP3269712A4/en not_active Withdrawn
- 2016-03-09 US US15/557,747 patent/US10577323B2/en not_active Expired - Fee Related
- 2016-03-09 CN CN201680015557.XA patent/CN107406383B/zh not_active Expired - Fee Related
- 2016-03-09 JP JP2016542787A patent/JP6028959B1/ja active Active
- 2016-03-09 KR KR1020177025470A patent/KR20170128287A/ko not_active Application Discontinuation
- 2016-03-09 SG SG11201706660WA patent/SG11201706660WA/en unknown
- 2016-03-11 TW TW105107603A patent/TWI694996B/zh not_active IP Right Cessation
-
2017
- 2017-09-12 IL IL254447A patent/IL254447A0/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170128287A (ko) | 2017-11-22 |
| EP3269712A1 (en) | 2018-01-17 |
| TWI694996B (zh) | 2020-06-01 |
| WO2016147989A1 (ja) | 2016-09-22 |
| IL254447A0 (en) | 2017-11-30 |
| CN107406383A (zh) | 2017-11-28 |
| JP6028959B1 (ja) | 2016-11-24 |
| TW201641496A (zh) | 2016-12-01 |
| EP3269712A4 (en) | 2018-08-08 |
| US20180065930A1 (en) | 2018-03-08 |
| CN107406383B (zh) | 2021-01-26 |
| JPWO2016147989A1 (ja) | 2017-04-27 |
| US10577323B2 (en) | 2020-03-03 |
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