SG11201708157RA - Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method - Google Patents
Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming methodInfo
- Publication number
- SG11201708157RA SG11201708157RA SG11201708157RA SG11201708157RA SG11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA
- Authority
- SG
- Singapore
- Prior art keywords
- lithography
- underlayer film
- forming
- composition
- forming method
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/28—Chemically modified polycondensates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G10/00—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
- C08G10/02—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
- C08G10/04—Chemically-modified polycondensates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
- C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
- C08G73/0644—Poly(1,3,5)triazines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
- C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
- C08G73/065—Preparatory processes
- C08G73/0655—Preparatory processes from polycyanurates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015078565 | 2015-04-07 | ||
PCT/JP2016/061398 WO2016163457A1 (en) | 2015-04-07 | 2016-04-07 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201708157RA true SG11201708157RA (en) | 2017-11-29 |
Family
ID=57073292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201708157RA SG11201708157RA (en) | 2015-04-07 | 2016-04-07 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method |
Country Status (8)
Country | Link |
---|---|
US (1) | US20180101097A1 (en) |
EP (1) | EP3282319A4 (en) |
JP (1) | JP6052652B1 (en) |
KR (1) | KR20170134511A (en) |
CN (1) | CN107533297A (en) |
SG (1) | SG11201708157RA (en) |
TW (1) | TW201704278A (en) |
WO (1) | WO2016163457A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10338471B2 (en) | 2014-08-08 | 2019-07-02 | Mitsubishi Gas Chemical Company, Inc. | Composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method |
US10343296B2 (en) | 2015-07-25 | 2019-07-09 | Bettcher Industries, Inc. | Power operated rotary knife with notched rotary knife blade and trim guide |
JP7235207B2 (en) * | 2017-11-20 | 2023-03-08 | 三菱瓦斯化学株式会社 | Film-forming composition for lithography, film for lithography, method for forming resist pattern, and method for forming circuit pattern |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52154857A (en) * | 1976-06-18 | 1977-12-22 | Mitsubishi Gas Chem Co Inc | Composition containing cyanic ester resin |
JP4407823B2 (en) * | 2004-02-18 | 2010-02-03 | 三菱瓦斯化学株式会社 | Novel cyanate ester compound, flame retardant resin composition, and cured product thereof |
WO2009072465A1 (en) * | 2007-12-07 | 2009-06-11 | Mitsubishi Gas Chemical Company, Inc. | Composition for forming base film for lithography and method for forming multilayer resist pattern |
US10155835B2 (en) * | 2011-08-09 | 2018-12-18 | Mitsubishi Gas Chemical Company, Inc. | Cyanate ester compound and method for producing the same, and curable resin composition comprising the compound, and cured product thereof composition |
KR101821705B1 (en) * | 2011-09-06 | 2018-01-25 | 주식회사 동진쎄미켐 | Phenolic self-crosslinking polymer and under-layer composition of resist including the same |
CN103987753B (en) * | 2011-12-07 | 2016-06-08 | 三菱瓦斯化学株式会社 | Resin combination, prepreg and plywood |
WO2013115069A1 (en) * | 2012-01-31 | 2013-08-08 | 三菱瓦斯化学株式会社 | Resin composition for printed wiring board material, and prepreg, resin sheet, metal foil-clad laminate, and printed wiring board using same |
TWI602027B (en) * | 2012-02-09 | 2017-10-11 | 日產化學工業股份有限公司 | Photoresist underlayer film forming composition |
US10338471B2 (en) * | 2014-08-08 | 2019-07-02 | Mitsubishi Gas Chemical Company, Inc. | Composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method |
JP6403003B2 (en) * | 2014-12-05 | 2018-10-10 | Dic株式会社 | Cyanate ester compound, cyanate ester resin, curable composition, cured product thereof, build-up film, semiconductor sealing material, prepreg, circuit board, and method for producing cyanate ester resin |
CN107407884A (en) * | 2015-03-03 | 2017-11-28 | 三菱瓦斯化学株式会社 | Lower layer film for lithography, which forms to be formed with material, lower layer film for lithography, uses composition, lower layer film for lithography, corrosion-resisting pattern forming method and circuit pattern forming method |
-
2016
- 2016-04-07 US US15/565,064 patent/US20180101097A1/en not_active Abandoned
- 2016-04-07 EP EP16776623.7A patent/EP3282319A4/en not_active Withdrawn
- 2016-04-07 SG SG11201708157RA patent/SG11201708157RA/en unknown
- 2016-04-07 TW TW105110917A patent/TW201704278A/en unknown
- 2016-04-07 KR KR1020177030371A patent/KR20170134511A/en active IP Right Grant
- 2016-04-07 WO PCT/JP2016/061398 patent/WO2016163457A1/en active Application Filing
- 2016-04-07 JP JP2016554521A patent/JP6052652B1/en active Active
- 2016-04-07 CN CN201680019607.1A patent/CN107533297A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US20180101097A1 (en) | 2018-04-12 |
EP3282319A1 (en) | 2018-02-14 |
JP6052652B1 (en) | 2016-12-27 |
KR20170134511A (en) | 2017-12-06 |
JPWO2016163457A1 (en) | 2017-04-27 |
CN107533297A (en) | 2018-01-02 |
EP3282319A4 (en) | 2018-12-05 |
WO2016163457A1 (en) | 2016-10-13 |
TW201704278A (en) | 2017-02-01 |
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