SG11201708157RA - Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method - Google Patents

Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method

Info

Publication number
SG11201708157RA
SG11201708157RA SG11201708157RA SG11201708157RA SG11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA
Authority
SG
Singapore
Prior art keywords
lithography
underlayer film
forming
composition
forming method
Prior art date
Application number
SG11201708157RA
Inventor
Kana Okada
Takashi Makinoshima
Masatoshi Echigo
Go Higashihara
Atsushi Okoshi
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of SG11201708157RA publication Critical patent/SG11201708157RA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/28Chemically modified polycondensates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G10/00Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
    • C08G10/02Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
    • C08G10/04Chemically-modified polycondensates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
    • C08G73/0644Poly(1,3,5)triazines
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
    • C08G73/065Preparatory processes
    • C08G73/0655Preparatory processes from polycyanurates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11201708157RA 2015-04-07 2016-04-07 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method SG11201708157RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015078565 2015-04-07
PCT/JP2016/061398 WO2016163457A1 (en) 2015-04-07 2016-04-07 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method

Publications (1)

Publication Number Publication Date
SG11201708157RA true SG11201708157RA (en) 2017-11-29

Family

ID=57073292

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201708157RA SG11201708157RA (en) 2015-04-07 2016-04-07 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method

Country Status (8)

Country Link
US (1) US20180101097A1 (en)
EP (1) EP3282319A4 (en)
JP (1) JP6052652B1 (en)
KR (1) KR20170134511A (en)
CN (1) CN107533297A (en)
SG (1) SG11201708157RA (en)
TW (1) TW201704278A (en)
WO (1) WO2016163457A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10338471B2 (en) 2014-08-08 2019-07-02 Mitsubishi Gas Chemical Company, Inc. Composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
US10343296B2 (en) 2015-07-25 2019-07-09 Bettcher Industries, Inc. Power operated rotary knife with notched rotary knife blade and trim guide
JP7235207B2 (en) * 2017-11-20 2023-03-08 三菱瓦斯化学株式会社 Film-forming composition for lithography, film for lithography, method for forming resist pattern, and method for forming circuit pattern

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154857A (en) * 1976-06-18 1977-12-22 Mitsubishi Gas Chem Co Inc Composition containing cyanic ester resin
JP4407823B2 (en) * 2004-02-18 2010-02-03 三菱瓦斯化学株式会社 Novel cyanate ester compound, flame retardant resin composition, and cured product thereof
WO2009072465A1 (en) * 2007-12-07 2009-06-11 Mitsubishi Gas Chemical Company, Inc. Composition for forming base film for lithography and method for forming multilayer resist pattern
US10155835B2 (en) * 2011-08-09 2018-12-18 Mitsubishi Gas Chemical Company, Inc. Cyanate ester compound and method for producing the same, and curable resin composition comprising the compound, and cured product thereof composition
KR101821705B1 (en) * 2011-09-06 2018-01-25 주식회사 동진쎄미켐 Phenolic self-crosslinking polymer and under-layer composition of resist including the same
CN103987753B (en) * 2011-12-07 2016-06-08 三菱瓦斯化学株式会社 Resin combination, prepreg and plywood
WO2013115069A1 (en) * 2012-01-31 2013-08-08 三菱瓦斯化学株式会社 Resin composition for printed wiring board material, and prepreg, resin sheet, metal foil-clad laminate, and printed wiring board using same
TWI602027B (en) * 2012-02-09 2017-10-11 日產化學工業股份有限公司 Photoresist underlayer film forming composition
US10338471B2 (en) * 2014-08-08 2019-07-02 Mitsubishi Gas Chemical Company, Inc. Composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
JP6403003B2 (en) * 2014-12-05 2018-10-10 Dic株式会社 Cyanate ester compound, cyanate ester resin, curable composition, cured product thereof, build-up film, semiconductor sealing material, prepreg, circuit board, and method for producing cyanate ester resin
CN107407884A (en) * 2015-03-03 2017-11-28 三菱瓦斯化学株式会社 Lower layer film for lithography, which forms to be formed with material, lower layer film for lithography, uses composition, lower layer film for lithography, corrosion-resisting pattern forming method and circuit pattern forming method

Also Published As

Publication number Publication date
US20180101097A1 (en) 2018-04-12
EP3282319A1 (en) 2018-02-14
JP6052652B1 (en) 2016-12-27
KR20170134511A (en) 2017-12-06
JPWO2016163457A1 (en) 2017-04-27
CN107533297A (en) 2018-01-02
EP3282319A4 (en) 2018-12-05
WO2016163457A1 (en) 2016-10-13
TW201704278A (en) 2017-02-01

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