SG11201706660WA - Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin - Google Patents

Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin

Info

Publication number
SG11201706660WA
SG11201706660WA SG11201706660WA SG11201706660WA SG11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA
Authority
SG
Singapore
Prior art keywords
lithography
underlayer film
resin
forming
compound
Prior art date
Application number
SG11201706660WA
Inventor
Kana Okada
Junya Horiuchi
Takashi Makinoshima
Masatoshi Echigo
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of SG11201706660WA publication Critical patent/SG11201706660WA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D209/00Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56Ring systems containing three or more rings
    • C07D209/80[b, c]- or [b, d]-condensed
    • C07D209/82Carbazoles; Hydrogenated carbazoles
    • C07D209/86Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D405/00Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
    • C07D405/02Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
    • C07D405/04Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings directly linked by a ring-member-to-ring-member bond
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/124Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
SG11201706660WA 2015-03-13 2016-03-09 Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin SG11201706660WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015050731 2015-03-13
PCT/JP2016/057438 WO2016147989A1 (en) 2015-03-13 2016-03-09 Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin

Publications (1)

Publication Number Publication Date
SG11201706660WA true SG11201706660WA (en) 2017-09-28

Family

ID=56918793

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201706660WA SG11201706660WA (en) 2015-03-13 2016-03-09 Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin

Country Status (9)

Country Link
US (1) US10577323B2 (en)
EP (1) EP3269712A4 (en)
JP (1) JP6028959B1 (en)
KR (1) KR20170128287A (en)
CN (1) CN107406383B (en)
IL (1) IL254447A0 (en)
SG (1) SG11201706660WA (en)
TW (1) TWI694996B (en)
WO (1) WO2016147989A1 (en)

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JP7426234B2 (en) * 2017-02-28 2024-02-01 三菱瓦斯化学株式会社 Methods for purifying compounds or resins, and methods for producing compositions
KR102456399B1 (en) 2017-03-10 2022-10-20 제이에스알 가부시끼가이샤 A composition for forming a resist underlayer film, a resist underlayer film and a method for forming the same, and a method for manufacturing a patterned substrate
JP2018154600A (en) * 2017-03-21 2018-10-04 三菱瓦斯化学株式会社 Compound, resin, composition, patterning method, and purifying method
KR102349937B1 (en) * 2017-03-27 2022-01-10 동우 화인켐 주식회사 Composition for hard mask
CN110832397B (en) * 2017-07-14 2023-12-15 日产化学株式会社 Composition for forming resist underlayer film, and method for forming resist pattern
KR102389260B1 (en) * 2017-11-10 2022-04-20 동우 화인켐 주식회사 Composition for hard mask
JP7207321B2 (en) * 2017-11-16 2023-01-18 Jsr株式会社 Composition for forming resist underlayer film, resist underlayer film and method for forming same, method for producing patterned substrate, and compound
JP6981945B2 (en) 2018-09-13 2021-12-17 信越化学工業株式会社 Pattern formation method
JP7161451B2 (en) 2019-07-05 2022-10-26 信越化学工業株式会社 Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and method for forming pattern
KR102456165B1 (en) * 2020-03-10 2022-10-17 삼성에스디아이 주식회사 Hardmask composition and method of forming patterns

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WO2017038643A1 (en) * 2015-08-31 2017-03-09 三菱瓦斯化学株式会社 Material for forming underlayer films for lithography, composition for forming underlayer films for lithography, underlayer film for lithography and method for producing same, and resist pattern forming method

Also Published As

Publication number Publication date
JPWO2016147989A1 (en) 2017-04-27
US20180065930A1 (en) 2018-03-08
IL254447A0 (en) 2017-11-30
TWI694996B (en) 2020-06-01
JP6028959B1 (en) 2016-11-24
US10577323B2 (en) 2020-03-03
EP3269712A1 (en) 2018-01-17
CN107406383A (en) 2017-11-28
KR20170128287A (en) 2017-11-22
WO2016147989A1 (en) 2016-09-22
TW201641496A (en) 2016-12-01
EP3269712A4 (en) 2018-08-08
CN107406383B (en) 2021-01-26

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