SG11201706660WA - Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin - Google Patents
Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resinInfo
- Publication number
- SG11201706660WA SG11201706660WA SG11201706660WA SG11201706660WA SG11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA
- Authority
- SG
- Singapore
- Prior art keywords
- lithography
- underlayer film
- resin
- forming
- compound
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/86—Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/02—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
- C07D405/04—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings directly linked by a ring-member-to-ring-member bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015050731 | 2015-03-13 | ||
PCT/JP2016/057438 WO2016147989A1 (en) | 2015-03-13 | 2016-03-09 | Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201706660WA true SG11201706660WA (en) | 2017-09-28 |
Family
ID=56918793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201706660WA SG11201706660WA (en) | 2015-03-13 | 2016-03-09 | Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin |
Country Status (9)
Country | Link |
---|---|
US (1) | US10577323B2 (en) |
EP (1) | EP3269712A4 (en) |
JP (1) | JP6028959B1 (en) |
KR (1) | KR20170128287A (en) |
CN (1) | CN107406383B (en) |
IL (1) | IL254447A0 (en) |
SG (1) | SG11201706660WA (en) |
TW (1) | TWI694996B (en) |
WO (1) | WO2016147989A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106715619B (en) | 2014-09-19 | 2020-02-07 | 日产化学工业株式会社 | Coating liquid for coating resist pattern |
JP2018091943A (en) * | 2016-11-30 | 2018-06-14 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | Flattened film formation composition, flattened film prepared therewith, and method for producing device using the same |
JP7426234B2 (en) * | 2017-02-28 | 2024-02-01 | 三菱瓦斯化学株式会社 | Methods for purifying compounds or resins, and methods for producing compositions |
KR102456399B1 (en) | 2017-03-10 | 2022-10-20 | 제이에스알 가부시끼가이샤 | A composition for forming a resist underlayer film, a resist underlayer film and a method for forming the same, and a method for manufacturing a patterned substrate |
JP2018154600A (en) * | 2017-03-21 | 2018-10-04 | 三菱瓦斯化学株式会社 | Compound, resin, composition, patterning method, and purifying method |
KR102349937B1 (en) * | 2017-03-27 | 2022-01-10 | 동우 화인켐 주식회사 | Composition for hard mask |
CN110832397B (en) * | 2017-07-14 | 2023-12-15 | 日产化学株式会社 | Composition for forming resist underlayer film, and method for forming resist pattern |
KR102389260B1 (en) * | 2017-11-10 | 2022-04-20 | 동우 화인켐 주식회사 | Composition for hard mask |
JP7207321B2 (en) * | 2017-11-16 | 2023-01-18 | Jsr株式会社 | Composition for forming resist underlayer film, resist underlayer film and method for forming same, method for producing patterned substrate, and compound |
JP6981945B2 (en) | 2018-09-13 | 2021-12-17 | 信越化学工業株式会社 | Pattern formation method |
JP7161451B2 (en) | 2019-07-05 | 2022-10-26 | 信越化学工業株式会社 | Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and method for forming pattern |
KR102456165B1 (en) * | 2020-03-10 | 2022-10-17 | 삼성에스디아이 주식회사 | Hardmask composition and method of forming patterns |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
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CA941222A (en) * | 1970-03-16 | 1974-02-05 | Horizons Research Incorporated | Polyvinylcarbazole photographic systems |
LU76074A1 (en) * | 1976-10-26 | 1978-05-16 | ||
CH645306A5 (en) * | 1980-04-16 | 1984-09-28 | Ciba Geigy Ag | METHOD FOR PRODUCING CONCENTRATED SOLUTIONS OF COLOR IMAGES. |
JPS6057340A (en) * | 1983-09-08 | 1985-04-03 | Fuji Photo Film Co Ltd | Composition for printing-out |
DE3923426A1 (en) * | 1989-07-15 | 1991-01-17 | Hoechst Ag | METHOD FOR PRODUCING NOVOLAK RESIN WITH A LOW METAL ION CONTENT |
DE3940478A1 (en) * | 1989-12-07 | 1991-06-13 | Bayer Ag | BIS-TRIARYLMETHANE COMPOUNDS |
JPH10152636A (en) * | 1991-05-30 | 1998-06-09 | Ricoh Co Ltd | Magnetic ink |
JP3774668B2 (en) | 2001-02-07 | 2006-05-17 | 東京エレクトロン株式会社 | Cleaning pretreatment method for silicon nitride film forming apparatus |
JP2003300922A (en) * | 2002-04-08 | 2003-10-21 | Honshu Chem Ind Co Ltd | Trimethylolated triphenol |
JP3914493B2 (en) | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | Underlayer film forming material for multilayer resist process and wiring forming method using the same |
CN100350574C (en) | 2003-01-24 | 2007-11-21 | 东京毅力科创株式会社 | Method of CVD for forming silicon nitride film on substrate |
JP3981030B2 (en) | 2003-03-07 | 2007-09-26 | 信越化学工業株式会社 | Resist underlayer film material and pattern forming method |
JP4388429B2 (en) | 2004-02-04 | 2009-12-24 | 信越化学工業株式会社 | Resist underlayer film material and pattern forming method |
JP4659678B2 (en) * | 2005-12-27 | 2011-03-30 | 信越化学工業株式会社 | Photoresist underlayer film forming material and pattern forming method |
JP4781280B2 (en) | 2006-01-25 | 2011-09-28 | 信越化学工業株式会社 | Antireflection film material, substrate, and pattern forming method |
JP4638380B2 (en) | 2006-01-27 | 2011-02-23 | 信越化学工業株式会社 | Antireflection film material, substrate having antireflection film, and pattern forming method |
TW200741353A (en) * | 2006-02-27 | 2007-11-01 | Mitsubishi Gas Chemical Co | Compound for forming antireflective film and antireflective film |
JP4847426B2 (en) * | 2007-10-03 | 2011-12-28 | 信越化学工業株式会社 | Resist underlayer film material and pattern forming method using the same |
KR101397354B1 (en) * | 2007-12-07 | 2014-05-19 | 미츠비시 가스 가가쿠 가부시키가이샤 | Composition for forming base film for lithography and method for forming multilayer resist pattern |
KR101860385B1 (en) * | 2009-06-19 | 2018-05-23 | 닛산 가가쿠 고교 가부시키 가이샤 | Carbazole novolak resin |
JP5742715B2 (en) | 2009-09-15 | 2015-07-01 | 三菱瓦斯化学株式会社 | Aromatic hydrocarbon resin and composition for forming underlayer film for lithography |
EP2743770B1 (en) * | 2011-08-12 | 2015-12-30 | Mitsubishi Gas Chemical Company, Inc. | Underlayer film-forming material for lithography, underlayer film for lithography, and pattern formation method |
EP2743769B1 (en) * | 2011-08-12 | 2017-03-22 | Mitsubishi Gas Chemical Company, Inc. | Resist composition, resist pattern formation method, polyphenol compound used therein, and alcohol compound capable of being derived therefrom |
JP5958734B2 (en) * | 2011-10-17 | 2016-08-02 | 三菱瓦斯化学株式会社 | Novel epoxy compound and method for producing the same |
WO2015041208A1 (en) * | 2013-09-19 | 2015-03-26 | 日産化学工業株式会社 | Composition for forming underlayer film of self-assembling film including aliphatic polycyclic structure |
JP6829936B2 (en) * | 2013-11-29 | 2021-02-17 | 三菱瓦斯化学株式会社 | Method for purifying a compound or resin |
KR102352289B1 (en) * | 2014-04-17 | 2022-01-19 | 삼성디스플레이 주식회사 | Photoresist composition and method of fabricating display substrate using the same |
WO2017038645A1 (en) * | 2015-08-31 | 2017-03-09 | 三菱瓦斯化学株式会社 | Material for forming underlayer films for lithography, composition for forming underlayer films for lithography, underlayer film for lithography and method for producing same, pattern forming method, resin, and purification method |
WO2017038643A1 (en) * | 2015-08-31 | 2017-03-09 | 三菱瓦斯化学株式会社 | Material for forming underlayer films for lithography, composition for forming underlayer films for lithography, underlayer film for lithography and method for producing same, and resist pattern forming method |
-
2016
- 2016-03-09 US US15/557,747 patent/US10577323B2/en not_active Expired - Fee Related
- 2016-03-09 JP JP2016542787A patent/JP6028959B1/en active Active
- 2016-03-09 WO PCT/JP2016/057438 patent/WO2016147989A1/en active Application Filing
- 2016-03-09 EP EP16764819.5A patent/EP3269712A4/en not_active Withdrawn
- 2016-03-09 KR KR1020177025470A patent/KR20170128287A/en not_active Application Discontinuation
- 2016-03-09 SG SG11201706660WA patent/SG11201706660WA/en unknown
- 2016-03-09 CN CN201680015557.XA patent/CN107406383B/en not_active Expired - Fee Related
- 2016-03-11 TW TW105107603A patent/TWI694996B/en not_active IP Right Cessation
-
2017
- 2017-09-12 IL IL254447A patent/IL254447A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPWO2016147989A1 (en) | 2017-04-27 |
US20180065930A1 (en) | 2018-03-08 |
IL254447A0 (en) | 2017-11-30 |
TWI694996B (en) | 2020-06-01 |
JP6028959B1 (en) | 2016-11-24 |
US10577323B2 (en) | 2020-03-03 |
EP3269712A1 (en) | 2018-01-17 |
CN107406383A (en) | 2017-11-28 |
KR20170128287A (en) | 2017-11-22 |
WO2016147989A1 (en) | 2016-09-22 |
TW201641496A (en) | 2016-12-01 |
EP3269712A4 (en) | 2018-08-08 |
CN107406383B (en) | 2021-01-26 |
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