JP4847426B2 - Resist underlayer film material and pattern forming method using the same - Google Patents

Description

  The present invention relates to a resist underlayer film forming material effective as an antireflection film material used for microfabrication in a manufacturing process of a semiconductor element or the like, and a resist suitable for immersion lithography using ArF excimer laser light (193 nm) using the material. The present invention relates to a pattern forming method.

  In recent years, with the increasing integration and speed of LSIs, there is a need for finer pattern rules. In lithography using light exposure, which is currently used as a general-purpose technology, the essence derived from the wavelength of the light source The resolution limit is approaching.

  As a light source for lithography used in forming a resist pattern, light exposure using a mercury lamp g-line (436 nm) or i-line (365 nm) as a light source is widely used, and as a means for further miniaturization, A method of shortening the wavelength of exposure light has been considered effective. For this reason, a short wavelength KrF excimer laser (248 nm) was used as an exposure light source in place of the i-line (365 nm) in the mass production process of the 64-Mbit DRAM processing method. However, in order to manufacture a DRAM having a degree of integration of 1G or more that requires a finer processing technique (processing dimension is 130 nm or less), a light source with a shorter wavelength is required, and in particular, lithography using an ArF excimer laser (193 nm). Has been considered.

  As a life extension of ArF lithography, immersion lithography in which water is provided between a projection lens and a wafer has been studied. By using water having a refractive index of 1.44 at a wavelength of 193 nm, a projection lens having a numerical aperture (NA) 1.44 times higher than that of air having a refractive index of 1.0 can be designed. A pattern with a half pitch of 45 nm can be formed in combination with a projection lens in the vicinity of NA 1.3.

  Here, as the NA increases, the incident angle of light incident on the resist increases. Furthermore, it is pointed out that the reflection from the substrate is increased by increasing the proportion of light having a large incident angle by polarized illumination. In contrast, the two-layer BARC (Non-Patent Document 1) and the three-layer process (Non-Patent Document 2) with a silicon-containing intermediate film and an underlayer film having an antireflection effect have a high reflection reduction effect at NA of 1.0 or more. Has been reported. However, when the NA is 1.2 or more, the two-layer antireflection film is insufficient, and further reduction of the reflectance is necessary. On the other hand, it has been reported that BARC, whose absorption increases stepwise as it is closer to the substrate surface, has a higher reflectance reduction effect than two-layer BARC (Non-Patent Document 1).

  The use of an antireflection film composed of a multilayer film for preventing reflection of light of various wavelengths has been known for a long time and has been used for optical lenses and the like. A substrate having an excellent antireflection effect with respect to various wavelengths is also an antireflection substrate corresponding to various incident angles. An antireflection film in which the number of multilayer films is infinite, that is, the absorption is changed stepwise can be an extremely excellent antireflection film. An example in which this principle is applied to BARC is proposed in Patent Document 1. Here, as a specific material for applying a stepwise absorption change, a photobleachable material such as nitrone is used.

  In addition, when there is a step in the substrate to be processed, it is necessary to flatten the step. In a multilayer resist process, it can be flattened by applying a lower layer film, and fluctuations in the film thickness of the intermediate layer and resist formed thereon can be suppressed, and the focus margin of lithography can be expanded.

  When the resist underlayer film is formed by spin coating, there is an advantage that the unevenness of the substrate can be embedded. On the other hand, in an amorphous carbon underlayer film formed by CVD using methane gas, ethane gas, acetylene gas or the like as a raw material, it is difficult in principle to bury a step flatly. On the other hand, in a coating type material, as shown in Patent Document 2, a method using a novolak having a low molecular weight and a wide molecular weight distribution, and as shown in Patent Document 3, a low molecular compound having a low melting point is blended with a base polymer. The embedding characteristics were improved by the method. However, when the embedding improvement by adding a low molecular compound as shown in Patent Document 2 or Patent Document 3 is performed, there is a problem of causing generation of particles.

  In addition, an underlayer film based on hydroxystyrene and norbornadiene copolymer and having an acid generator and a crosslinking agent added has been proposed (Patent Document 4). This lower layer film has an optimum refractive index as an antireflection film function and is excellent in etching resistance, but has a problem of poor embedding characteristics.

  Under such circumstances, development of a promising material as a resist underlayer film for a multilayer resist process such as a silicon-containing two-layer resist process having excellent embedding characteristics on a stepped substrate and a three-layer resist process using a silicon-containing intermediate layer is awaited. It was.

JP-A-9-45614 JP 2002-47430 A JP-A-11-154638 JP 2004-205658 A SPIE Vol. 6135 p61531J (2006) SPIE Vol. 6135 p61530K (2006)

  The present invention has been made in view of such problems, and is excellent in embedding characteristics on a stepped substrate. For example, a multilayer resist process such as a silicon-containing two-layer resist process or a three-layer resist process using a silicon-containing intermediate layer. An object of the present invention is to provide a resist underlayer film material suitable as a resist underlayer film.

  The present invention has been made to solve the above problems, and is a resist underlayer film material for a multilayer resist film used in lithography, and has the following characteristics.

（式中、Ｒ^１、Ｒ^５は独立して水素原子又はメチル基、Ｒ^２、Ｒ^３は水素原子あるいはＲ^２、Ｒ^３同士が結合してメチレン基を形成していても良く、Ｒ^４、Ｒ^６は独立して水素原子、グリシジル基、あるいは酸不安定基である。ｍ、ｎは１〜４の正数である。ａ１、ａ２及びｂは正数であり、０≦ａ１／（ａ１＋ａ２＋ｂ）≦０．３、０≦ａ２／（ａ１＋ａ２＋ｂ）≦０．５、０＜（ａ１＋ａ２）／（ａ１＋ａ２＋ｂ）≦０．５、０．３≦ｂ／（ａ１＋ａ２＋ｂ）＜１．０の範囲である。）

（式中、Ｒ^７は水素原子又はメチル基、Ｒ^８は独立して単結合、炭素数１〜３０の直鎖状、分岐状、環状のアルキレン基、炭素数６〜３０のアルケニレン基、炭素数６〜３０のアリーレン基、炭素数８〜３０の芳香族骨格を含む炭化水素基のいずれかであり、縮合多環式炭化水素基を有していてもよく、また、前記炭化水素基中にヘテロ原子を含んでいてもよい。Ｒ^１０は独立して水素原子、炭素数１〜３０の直鎖状、分岐状、環状のアルキル基、炭素数６〜３０のアリール基のいずれかであり、前記アルキル基はアリール基によって置換されていてもよい。Ｒ^９、Ｒ^１１は独立して単結合又は炭素数１〜８のアルキレン基である。ｑは１〜４の正数であり、ｃは０．３≦ｃ≦１．０の範囲であり、ｄは０．４≦ｄ≦１．０、ｅは０．４≦ｅ≦１．０、の範囲である。Ｒ^１２は水素原子又は炭素数１〜４のアルキル基、Ｒ^１３、Ｒ^１４、Ｒ^１５、Ｒ^１６、Ｒ^１７は独立して炭素数６〜１６のアリーレン基又はアレーントリイル基で、ｆ、ｇ、ｈ、ｉ、ｊはそれぞれ１又は２である。） That is, in the present invention, it is a resist underlayer film material of a multilayer resist film used in lithography, and at least a mass average molecular weight represented by the following general formula (1) is in a range of 1,000 to 100,000, and is extinguished at a wavelength of 193 nm. A polymer compound having a coefficient (imaginary value of refractive index; k value) of 0.10 to 0.38, and an extinction coefficient (imaginary value of refractive index; wavelength 193 nm selected from the following general formulas (2) to (7): A resist underlayer film material obtained by blending one or more compounds having a k value in the range of 0.4 to 1.1 is provided.

(Wherein R ¹ and R ⁵ are independently a hydrogen atom or methyl group, R ² and R ³ are hydrogen atoms or R ² and R ³ may be bonded to each other to form a methylene group, R ⁴ , R ⁶ is independently a hydrogen atom, a glycidyl group, or an acid labile group, m and n are positive numbers from 1 to 4, a1, a2 and b are positive numbers, and 0 ≦ a1 / ( a1 + a2 + b) ≦ 0.3, 0 ≦ a2 / (a1 + a2 + b) ≦ 0.5, 0 <(a1 + a2) / (a1 + a2 + b) ≦ 0.5, 0.3 ≦ b / (a1 + a2 + b) <1.0. .)

(Wherein R ⁷ is a hydrogen atom or a methyl group, R ⁸ is independently a single bond, a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms, an alkenylene group having 6 to 30 carbon atoms, carbon Any one of an arylene group of 6 to 30 and a hydrocarbon group containing an aromatic skeleton of 8 to 30 carbon atoms, which may have a condensed polycyclic hydrocarbon group, and in the hydrocarbon group, R ¹⁰ is independently a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms. The alkyl group may be substituted with an aryl group, R ⁹ and R ¹¹ are each independently a single bond or an alkylene group having 1 to 8 carbon atoms, q is a positive number of 1 to 4, and c Is 0.3 ≦ c ≦ 1.0, d is 0.4 ≦ d ≦ 1.0, and e is 0.4. e ≦ 1.0, in the range of ^{.R 12} is an alkyl group having 1 to 4 hydrogen atoms or carbon ^{atoms, R 13, R 14, R} 15, R 16, R 17 is independently C 6 -C 16 (In the arylene group or the arenetriyl group, f, g, h, i, and j are each 1 or 2.)

  Thus, the mass average molecular weight is in the range of 1,000 to 100,000, and the extinction coefficient (imaginary value of refractive index; k value) at a wavelength of 193 nm is represented by the general formula (1) of 0.10 to 0.38. A blend of a polymer compound and one or more compounds having an extinction coefficient (imaginary value of refractive index; k value) at a wavelength of 193 nm selected from general formulas (2) to (7) in the range of 0.4 to 1.1 By using the resist underlayer film material, it is excellent in embedding characteristics in a stepped substrate. For example, a resist underlayer film for a multilayer resist process such as a silicon-containing two-layer resist process or a three-layer resist process using a silicon-containing intermediate layer is formed. Can do.

  In the resist underlayer film material, the polymer compound represented by the general formula (1) having an extinction coefficient (k value) in the range of 0.10 to 0.38 at the wavelength of 193 nm has a hydroxyl group of 0 mol%. / G or more and 0.29 mol% / g or less, and the compound shown by said general formula (2) thru | or (7) whose extinction coefficient (k value) in the said wavelength 193nm is the range of 0.4-1.1. It is preferable that the hydroxy group is 0.29 mol% / g or more (claim 2).

  Thus, the polymer compound represented by the general formula (1) that is hydrophobic and has a small absorption, that is, a small k value, and the general formulas (2) to (7) that are hydrophilic and have a large absorption, that is, a large k value. If a resist underlayer film material is used as a resist underlayer film material, a hydrophobic compound is aligned on the surface (upper layer side) and a hydrophilic compound is aligned on the substrate surface (substrate side) when the resist underlayer film is formed. It is possible to form a resist underlayer film having an excellent antireflection effect in which absorption increases stepwise from the film surface.

  The resist underlayer film material preferably further contains any one or more of an organic solvent, an acid generator, and a crosslinking agent.

  As described above, the resist underlayer film material of the present invention further contains any one or more of an organic solvent, an acid generator, and a crosslinking agent, thereby improving the coating property on the substrate, The crosslinking reaction in the resist underlayer film can be promoted by baking after coating on the substrate or the like. Therefore, the resist underlayer film formed from such a material has good film thickness uniformity, and there is little risk of intermixing with the resist upper layer film or resist intermediate layer film, and the diffusion of low molecular components into the upper layer film and the like is small. Can be.

  Moreover, in this invention, it is the board | substrate with which the resist lower layer film | membrane used by lithography was formed, Comprising: The said general formula (1) whose extinction coefficient (k value) in wavelength 193nm is the range of 0.10-0.38. And a polymer compound represented by formula (2) to (7) in which the extinction coefficient (k value) at a wavelength of 193 nm is in the range of 0.4 to 1.1 is blended. A polymer represented by the above general formula (1) in which the extinction coefficient (k value) at the wavelength of 193 nm is in the range of 0.10 to 0.38 by applying and baking any resist underlayer film material on the substrate. The compound is the upper layer side, the compound represented by the above general formulas (2) to (7) having an extinction coefficient (k value) in the range of 0.4 to 1.1 at the wavelength of 193 nm is oriented to the substrate side, and the resist lower layer film Shape Providing a substrate, wherein those which are (claim 4).

  As described above, the polymer compound represented by the general formula (1) having a small k value obtained by applying and baking the resist underlayer film material of the present invention on a substrate is the upper layer side, and the above-mentioned high k value. If the substrate represented by the general formulas (2) to (7) is oriented to the substrate side to form a resist underlayer film, the resist has excellent etching resistance under substrate etching conditions and embedding characteristics in a stepped substrate. It becomes a board | substrate which has a lower layer film, and becomes a high quality board | substrate which has the outstanding antireflection effect.

  Furthermore, in the present invention, there is provided a method of forming a pattern on a substrate by lithography, wherein at least one of the resist underlayer film materials is formed on the substrate, and the resist underlayer film is formed on the resist underlayer film. A resist upper layer film of the composition is formed to form a two-layer resist film, the pattern circuit region of the resist upper layer film is exposed, developed with a developer to form a resist pattern, and the resist upper layer on which the pattern is formed A pattern forming method is provided, wherein the resist underlayer film is etched using the film as a mask, and the substrate is etched using at least the resist underlayer film on which the pattern is formed as a mask to form a pattern on the substrate (claim). Item 5).

  Thus, the underlayer film formed from the resist underlayer film material of the present invention is excellent in etching resistance under substrate etching conditions. For this reason, a highly accurate pattern can be formed on a substrate by using the resist underlayer film material of the present invention in a two-layer resist process.

  In this case, the resist composition for forming the resist upper layer film contains a silicon atom-containing polymer, and etching of the resist lower layer film using the resist upper layer film as a mask is performed using an etching gas mainly composed of oxygen gas or hydrogen gas. (Claim 6).

  The lower layer film formed from the resist lower layer film material of the present invention uses, as the resist upper layer film, a base resin containing silicon atoms, and etching of the lower layer film using the resist upper layer film as a mask is performed using oxygen gas or hydrogen gas. Is suitable for transferring the resist pattern of the resist upper layer film to the resist lower layer film. For this reason, by using the resist underlayer film material of the present invention, a highly accurate pattern can be formed on the substrate.

  Further, in the present invention, there is further provided a method for forming a pattern on a substrate by lithography, wherein at least one of the resist underlayer film materials is formed on the substrate, and the resist underlayer film is formed on the resist underlayer film. Forming a resist intermediate layer film using a resist intermediate layer film material containing silicon atoms, and forming a resist upper layer film of a resist composition on the resist intermediate layer film to form a three-layer resist film; After exposing the pattern circuit area of the upper layer film, it was developed with a developing solution to form a resist pattern, and the resist intermediate film layer was etched using the resist upper layer film on which the pattern was formed as a mask, so that at least the pattern was formed The resist underlayer film layer is etched using the resist intermediate film layer as a mask, and at least under the resist where the pattern is formed. Pattern forming method and forming a pattern on a substrate by etching the substrate with a film as a mask is provided (claim 7).

  Thus, the resist underlayer film formed using the resist underlayer film material of the present invention brings about a further excellent antireflection effect when combined with a resist intermediate layer film having an antireflection effect if necessary. Moreover, it has excellent etching resistance during substrate etching. Therefore, if this is used as a resist underlayer film in a three-layer resist process, a pattern can be formed on the substrate with higher accuracy.

  In this case, the resist composition that forms the resist upper layer film contains a polymer that does not contain silicon atoms, and etching of the resist lower layer film that is performed using the resist intermediate layer film as a mask is performed using an etching gas mainly composed of oxygen gas or hydrogen gas. It is preferable to carry out using (claim 8).

  Those in which the resist upper layer film does not contain a silicon atom-containing polymer has an advantage that the resolution is excellent as compared with those containing a silicon atom-containing polymer. Therefore, the pattern transferred to the resist intermediate layer film, and the pattern transferred to the lower layer film by dry etching mainly using oxygen gas or hydrogen gas with the resist intermediate layer film as a mask can be made highly accurate. . Therefore, if the substrate is etched using the resist underlayer film to which the pattern is transferred in this way as a mask and the pattern is formed on the substrate, a pattern with higher accuracy can be formed.

  In the method of forming a pattern on the substrate by lithography, the pattern is formed by immersion lithography using an ArF excimer laser with an exposure wavelength of 193 nm and a numerical aperture (NA) of 1.0 or more. (Claim 9).

  In the pattern forming method of the present invention, the pattern circuit region is exposed to light using an ArF excimer laser with an exposure wavelength of 193 nm and a numerical aperture (NA) of 1.0 or more to form a pattern on the substrate by immersion lithography. If formed, finer processing becomes possible, and a more accurate pattern can be formed.

  Hereinafter, the present invention will be described in more detail.

  The present inventors have a silicon-containing two-layer resist process that can be preferably used in immersion exposure of an ArF excimer laser using a lens with NA of 1.0 or more, has excellent embedding characteristics, and generates less outgas during baking. In order to develop a resist underlayer film material that is promising as a resist underlayer film for a multilayer resist process such as a three-layer resist process using a silicon-containing intermediate layer.

In immersion lithography, the lower layer film for multi-layer resist process such as for three-layer resist process is thicker than normal anti-reflective film that uses both interference and absorption due to phase. The amplitude of the rate converges, and antireflection is performed only by absorption of the film. Here, a silicon-containing intermediate layer having a thickness of 35 nm and an n value of 1.5 and a k value of 0.15 below the resist, a lower layer film having a thickness of 200 nm below it, a SiO ₂ film having a thickness of 100 nm below it, The results of calculating the reflection between the resist and the silicon-containing intermediate layer in the 40 nm line and space with NA 1.35, dipole illumination, 95% s polarized light, 6% halftone phase shift mask in the film configuration of the Si substrate are shown in FIG. Shown in The n value and k value of the lower layer film are changed, and in FIG. 1, the horizontal axis indicates the k value and the vertical axis indicates the n value. In order to perform dimensional control, it is necessary to make the reflectance 1% or less, and for that purpose, the n value needs to be in the range of 1.5 to 1.8 and the k value must be in the range of 0.1 to 0.35. .

FIG. 2 shows a silicon-containing intermediate layer having a film thickness of 35 nm and an n value of 1.5 and a k value of 0.15 below the resist, and below it a film thickness of 50 nm (FIG. 2A) and 100 nm, respectively (FIG. 2B )), A lower layer film 1 of 150 nm (FIG. 2C), a lower layer film 2 having a film thickness of 50 nm and an n value of 1.4 and a k value of 0.6, and a SiO ₂ film of 100 nm below the lower layer film 2, Below that is the result of calculating the reflection between the resist and the silicon-containing intermediate layer at 40 nm line and space with NA 1.35, dipole illumination, 95% s polarized light, 6% halftone phase shift mask in the film configuration of the Si substrate. . In FIG. 2, the n value and the k value of the lower layer film 1 are changed, and similarly to FIG. 1, the horizontal axis indicates the k value and the vertical axis indicates the n value. It can be seen that the reflectivity of the 200 nm lower layer film in FIG. 1 is almost the same as the reflectivity of the 200 nm lower layer film, which is 150 nm for the lower layer film 1 in FIG. In FIG. 2, the optimum range of the n value and the k value that can be suppressed to a reflectance of 1% even when the film thickness of the lower layer film 1 is about 50 nm is so much as compared with the film thickness 150 nm of the lower layer film 1. It turns out that it does not become small.

  On the other hand, when a material having an n value of 1.70 and a k value of 0.3 and a material having an n value of 1.5 and a k value of 0.6 are blended at a ratio of 3: 1 as the lower layer film, the n value by the arithmetic mean is 1 .65 and the k value is 0.43. If the blended material is uniformly dispersed in the depth direction of the film, the k value becomes too high and the reflectivity exceeds 1% as shown in FIG. From the results shown in FIG. 1 and FIG. 2, when the blended material is deposited, the reflectance does not increase if an orientation occurs in which the material having a low k value is distributed in the upper layer and the material having a high k value is distributed in the lower layer. understood.

  Further, “undulation” of the lower layer film pattern after the substrate etching is pointed out. It has been shown that a hydrogen atom in a lower layer film is substituted with a fluorine atom during substrate etching with a fluorocarbon-based gas (Proc. Of Symp. Dry. Process, (2005) p11). It is considered that a finer pattern is produced when the surface of the lower layer film is made of Teflon (registered trademark) to swell due to an increase in the volume of the lower layer film or the glass transition point is lowered.

  On the other hand, a technique has been proposed in which the resist surface after development is fluorinated with fluorine gas, the thermal softening point of the resist pattern is lowered, and the hole size is shrunk by heat flow (SPIE vol. 5753 (2005) p195). According to this, the rate of fluorination is fastest for cresol novolac, followed by polyhydroxystyrene, and slowest for polymethylmethacrylate. It is generally well known that the electrophilic reaction with fluorine is faster in the aromatic group than in the alicyclic group, and the cresol novolak having the highest ratio of the aromatic group is considered to be most easily fluorinated. .

Under such a background, a resist underlayer film using a copolymer of hydroxystyrene or hydroxyvinylnaphthalene and norbornadiene has been proposed (Patent Document 4).
Norbornadiene, which is bicyclo [2.2.1] hepta-2,5-diene, can be radically polymerized or cationically polymerized, and there are problems with polynorbornene obtained by polymerizing norbornenes by metathesis polymerization and ROMP (ring-opening metathesis polymerization). There is no need for a demetallized catalytic process. Nortricyclene obtained by polymerizing norbornadiene has 7 tertiary carbons out of 7 carbon atoms. Norbornene has 4 tertiary carbon atoms out of 7 carbon atoms. Since tertiary carbon is less likely to be fluorinated than primary and secondary carbon by the amount of hydrogen atoms substituted, it is expected that the fluorine substitution ratio of hydrogen atoms during etching will be reduced. Expected to reduce pattern distortion.

  However, the present inventors have found that the above copolymer has a good refractive index and etching resistance as an antireflection film function, but has a problem of poor embedding characteristics. The reason why the embedding property is inferior is that the glass transition point of the base polymer is high. A polymer having a cycloolefin structure and excellent etching resistance generally has a high glass transition point, so that the embedding property is lowered. Therefore, the technique of adding a low molecular weight phenol compound or the like shown in Patent Document 2 or Patent Document 3 is effective for improving embedding characteristics, but particles are generated by sublimation of the low molecular weight compound during baking. In addition, a problem of contaminating the baking furnace occurs. Therefore, it was found that this method cannot be used from the viewpoint of particle reduction during baking.

On the other hand, a film formed by blending a hydrophobic material with a low surface energy and a hydrophilic material with a high surface energy and dissolving in a solvent to form a film by a method such as spin coating can cause the film surface to be It is known to be covered. For example, when a surfactant having a perfluoroalkyl group or dimethylsiloxane is added to the resist, the resist surface after spin coating is covered with the hydrophobic group of the surfactant.
The surface energy can also be expressed as a contact angle with water. For example, when the contact angle with a 10 μL water droplet is 60 ° or more, it is approximately hydrophobic, and when it is 50 ° or less, it is hydrophilic. The contact angle of the resist before exposure is 55 to 70 degrees, but the contact angle of the portion that is alkali-soluble by exposure and PEB is 50 degrees or less.

  Based on the above knowledge, the present inventors have obtained a polymer compound having an extinction coefficient (imaginary value of refractive index; k value, absorption coefficient) at a wavelength of 193 nm and a wavelength of 193 nm. A resist underlayer film material blended with a compound having an extinction coefficient (imaginary value of refractive index; k value, absorption coefficient) in the range of 0.4 to 1.1 is coated on the substrate, and the surface (upper layer side) is at a wavelength of 193 nm. A compound having an extinction coefficient (k value, absorption coefficient) in the range of 0.10 to 0.38 is oriented, and the extinction coefficient (k value, absorption coefficient) at a wavelength of 193 nm on the substrate surface (substrate side) is 0.4 to 1. A resist underlayer film formed by orienting a compound in the range of .1 is excellent in embedding characteristics in a stepped substrate. For example, a multilayer including a silicon-containing two-layer resist process or a three-layer resist process using a silicon-containing intermediate layer It found to be promising as a resist underlayer film for resist process, and have completed the present invention.

（式中、Ｒ^１、Ｒ^５は独立して水素原子又はメチル基、Ｒ^２、Ｒ^３は水素原子あるいはＲ^２、Ｒ^３同士が結合してメチレン基を形成していても良く、Ｒ^４、Ｒ^６は独立して水素原子、グリシジル基、あるいは酸不安定基である。ｍ、ｎは１〜４の正数である。ａ１、ａ２及びｂは正数であり、０≦ａ１／（ａ１＋ａ２＋ｂ）≦０．３、０≦ａ２／（ａ１＋ａ２＋ｂ）≦０．５、０＜（ａ１＋ａ２）／（ａ１＋ａ２＋ｂ）≦０．５、０．３≦ｂ／（ａ１＋ａ２＋ｂ）＜１．０の範囲である。）

（式中、Ｒ^７は水素原子又はメチル基、Ｒ^８は独立して単結合、炭素数１〜３０の直鎖状、分岐状、環状のアルキレン基、炭素数６〜３０のアルケニレン基、炭素数６〜３０のアリーレン基、炭素数８〜３０の芳香族骨格を含む炭化水素基のいずれかであり、縮合多環式炭化水素基を有していてもよく、また、前記炭化水素基中にヘテロ原子を含んでいてもよい。Ｒ^１０は独立して水素原子、炭素数１〜３０の直鎖状、分岐状、環状のアルキル基、炭素数６〜３０のアリール基のいずれかであり、前記アルキル基はアリール基によって置換されていてもよい。Ｒ^９、Ｒ^１１は独立して単結合又は炭素数１〜８のアルキレン基である。ｑは１〜４の正数であり、ｃは０．３≦ｃ≦１．０の範囲であり、ｄは０．４≦ｄ≦１．０、ｅは０．４≦ｅ≦１．０、の範囲である。Ｒ^１２は水素原子又は炭素数１〜４のアルキル基、Ｒ^１３、Ｒ^１４、Ｒ^１５、Ｒ^１６、Ｒ^１７は独立して炭素数６〜１６のアリーレン基又はアレーントリイル基で、ｆ、ｇ、ｈ、ｉ、ｊはそれぞれ１又は２である。） That is, the resist underlayer film material in the present invention is a resist underlayer film material of a multilayer resist film used in lithography, and has a mass average molecular weight of at least 1,000 to 100,000 represented by the following general formula (1). The extinction coefficient (refractive index imaginary value; k value) at a wavelength of 193 nm is a polymer compound having a 0.10 to 0.38 and the extinction coefficient (refractive index at a wavelength of 193 nm selected from the following general formulas (2) to (7) The resist underlayer film material is characterized by blending one or more compounds having an imaginary value of rate (k value) in the range of 0.4 to 1.1.

(Wherein R ¹ and R ⁵ are independently a hydrogen atom or methyl group, R ² and R ³ are hydrogen atoms or R ² and R ³ may be bonded to each other to form a methylene group, R ⁴ , R ⁶ is independently a hydrogen atom, a glycidyl group, or an acid labile group, m and n are positive numbers from 1 to 4, a1, a2 and b are positive numbers, and 0 ≦ a1 / ( a1 + a2 + b) ≦ 0.3, 0 ≦ a2 / (a1 + a2 + b) ≦ 0.5, 0 <(a1 + a2) / (a1 + a2 + b) ≦ 0.5, 0.3 ≦ b / (a1 + a2 + b) <1.0. .)

(Wherein R ⁷ is a hydrogen atom or a methyl group, R ⁸ is independently a single bond, a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms, an alkenylene group having 6 to 30 carbon atoms, carbon Any one of an arylene group of 6 to 30 and a hydrocarbon group containing an aromatic skeleton of 8 to 30 carbon atoms, which may have a condensed polycyclic hydrocarbon group, and in the hydrocarbon group, R ¹⁰ is independently a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms. The alkyl group may be substituted with an aryl group, R ⁹ and R ¹¹ are each independently a single bond or an alkylene group having 1 to 8 carbon atoms, q is a positive number of 1 to 4, and c Is 0.3 ≦ c ≦ 1.0, d is 0.4 ≦ d ≦ 1.0, and e is 0.4. e ≦ 1.0, in the range of ^{.R 12} is an alkyl group having 1 to 4 hydrogen atoms or carbon ^{atoms, R 13, R 14, R} 15, R 16, R 17 is independently C 6 -C 16 (In the arylene group or the arenetriyl group, f, g, h, i, and j are each 1 or 2.)

  Further, in the present invention, a hydrophobic compound and a hydrophilic compound are blended, for example, a solution dissolved in a solvent is spin-coated, and the hydrophobic compound is oriented on the surface (upper layer side) during film formation. A hydrophilic compound is oriented on the substrate side. If a hydrophobic compound is a compound having a small absorption, that is, a k value is small, a hydrophilic compound is a compound having a large absorption and a large k value, and a blend of these is used as a resist underlayer film material, it is stepped from the film surface. It is possible to form a resist underlayer film having a large absorption. Such a resist underlayer film whose absorption gradually increases from the film surface has an excellent antireflection effect for various wavelengths.

  In the present invention, when the lower layer film is formed, as a hydrophobic compound oriented on the surface (upper layer side) of the lower layer film, the extinction coefficient at the wavelength of 193 nm represented by the general formula (1) (imaginary value of refractive index; A high molecular compound having a k value of 0.10 to 0.38 is used. Moreover, as a hydrophilic compound orientated below the lower layer film (substrate side), the extinction coefficient (imaginary value of refractive index; k value) at 193 nm represented by the general formulas (2) to (7) is 0. Although compounds in the range of .4 to 1.1 are used, these compounds have low glass transition points or low molecular weight compounds, and can improve the embedding characteristics. As described above, blends of low molecular weight materials have a risk of causing outgassing. However, in the system of the lower layer film of the present invention, the low molecular weight compounds are oriented toward the lower side of the lower layer film, so that crosslinking occurs inside the film. Will not cause outgassing. Therefore, a substrate having a resist underlayer film having excellent embedding characteristics can be obtained without contaminating the baking furnace.

  The level of hydrophilicity or hydrophobicity can be indicated by the proportion of hydroxy groups. Hydrophilicity and hydrophobicity are relative, and a compound having a hydroxy group of 0 mol% / g or more and 0.29 mol% / g or less is more hydrophobic than a compound having a hydroxy group of 0.29 mol% / g or more. Is expensive. When a material blended with a compound having a hydroxy group of 0 mol% / g or more and 0.29 mol% / g or less and a compound having a hydroxy group of 0.29 mol% / g or more is applied on a substrate, The film surface is covered with a highly hydrophobic compound of 0 mol% / g or more and 0.29 mol% / g or less.

  Therefore, the polymer compound having a quenching coefficient (imaginary value of refractive index; k value) at a wavelength of 193 nm represented by the general formula (1) has a hydroxy group of 0 mol% / g or more, 0. It is preferably a polymer compound of 29 mol% / g or less, more preferably 0.01 mol% / g or more, 0.25 mol% / g or less, still more preferably 0.02 mol% / g or more, It is 0.24 mol% / g or less. Compounds having the extinction coefficient (imaginary value of refractive index; k value) at 193 nm represented by the general formulas (2) to (7) in the range of 0.4 to 1.1 have a hydroxy group of 0.29 mol% / g or more. More preferably, it is 0.32 mol% / g or more, and still more preferably 0.35 mol% / g or more.

  For example, the polymer copolymerized at a ratio of 10 mol% hydroxystyrene and 90 mol% styrene is 0.19 mol% / g, and since it has high hydrophobicity, it has a hydroxy group of 0.29 mol% / g or more. The polymer of 10% by mole of hydroxystyrene and 90% by mole of styrene can be oriented to the surface side by, for example, film formation by spin coating. However, the absorption of the copolymer of 10% by mole of hydroxystyrene and 90% by mole of styrene is very large, and the k value is around 1, and the reflectivity on a film in which such a high absorption material is oriented on the surface side. Is very expensive. From the viewpoint of the antireflection mechanism in the lower layer film, as described above, when the k value on the surface side (upper layer side) is small, the reflection is increased even if there is a compound with high absorption on the lower side (substrate side). I won't let you. Therefore, it is preferable to set both the ratio of hydroxy groups and the k value within the optimum ranges in each of the hydrophobic compound and the hydrophilic compound that are blended into the resist underlayer film material.

Thus, a high molecular compound having an extinction coefficient (imaginary value of refractive index; k value) at a wavelength of 193 nm having the repeating unit represented by the general formula (1) and the following general formula (2) A resist underlayer film material obtained by blending one or more compounds having an extinction coefficient (imaginary value of refractive index; k value) at a wavelength of 193 nm selected from (7) in the range of 0.4 to 1.1 is, for example, It can be suitably used for exposure at a short wavelength such as 193 nm and has excellent embedding characteristics on a stepped substrate. For example, for a multi-layer resist process such as a silicon-containing two-layer resist process or a three-layer resist process using a silicon-containing intermediate layer Suitable as a resist underlayer film.
For example, it can be made more transparent than polyhydroxystyrene, cresol novolak, naphthol novolak, and the like. In addition, it exhibits an excellent antireflection effect when the film thickness is 200 nm or more in exposure with a short wavelength such as 193 nm.

  Here, the repeating units a1 and a2 in the general formula (1) can be obtained from, for example, a1m of hydroxystyrenes or hydroxyindenes represented by the following formula, a2m of hydroxyvinylnaphthalenes, The nortricyclene of the unit b can be obtained by polymerization with each monomer of norbornaldiene bm below.

（式中、Ｒ^４‘、Ｒ^６‘は独立してＲ^４、Ｒ^６と同一でも良く、アセチル基、ピバロイル酸で、重合後アルカリ加水分解によってヒドロキシ基にしても良い。Ｒ^１、Ｒ^５、ｍ、ｎについては前述と同様である。）

(In the formula, R ^{4 ′} and R ^{6 ′} may independently be the same as R ⁴ and R ^6, and may be an acetyl group or pivaloyl acid, and may be converted into a hydroxy group by alkaline hydrolysis after polymerization. R ¹ and R ⁵ , M and n are the same as described above.)

  Further, as a monomer for obtaining the repeating units a1, a2, and b, a hydroxy group may be substituted with an acetyl group or a pivaloyl group, and then deprotected by alkali hydrolysis after polymerization to form a hydroxy group.

In the general formula (1), when R ⁴ and R ⁶ are acid labile groups, they are variously selected, but they may be the same or different, and a hydroxyl group hydrogen atom, that is, in the general formula (1) The hydrogen atom at the position of R ⁴ and R ⁶ is particularly a group represented by the following formulas (A-1) and (A-2), a tertiary alkyl having 4 to 40 carbon atoms represented by the following formula (A-3) Groups having a structure substituted with a group, an oxoalkyl group having 4 to 20 carbon atoms, a trimethylsilyl group or the like, particularly those represented by groups substituted by the following formulas (A-1) to (A-3) Is mentioned.

In General Formula (A-1), R ³⁰ is a tertiary alkyl group having 4 to 20 carbon atoms, preferably 4 to 15 carbon atoms, each alkyl group is a trialkylsilyl group having 1 to 6 carbon atoms, and 4 to 20 carbon atoms. Or a group represented by the above general formula (A-3), specifically, as the tertiary alkyl group, a tert-butyl group, a tert-amyl group, a 1,1-diethylpropyl group, 1- Ethylcyclopentyl group, 1-butylcyclopentyl group, 1-ethylcyclohexyl group, 1-butylcyclohexyl group, 1-ethyl-2-cyclopentenyl group, 1-ethyl-2-cyclohexenyl group, 2-methyl-2-adamantyl group Specific examples of the trialkylsilyl group include a trimethylsilyl group, a triethylsilyl group, and a dimethyl-tert-butylsilyl group. Specific examples of the oxoalkyl group include a 3-oxocyclohexyl group, a 4-methyl-2-oxooxan-4-yl group, and a 5-methyl-2-oxooxolan-5-yl group. a3 is an integer of 0-6.

In the general formula (A-2), R ³¹ and R ³² represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms, specifically a methyl group. , Ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, cyclopentyl group, cyclohexyl group, 2-ethylhexyl group, n-octyl group and the like. R ³³ represents a monovalent hydrocarbon group which may have a hetero atom such as an oxygen atom having 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms, a linear, branched or cyclic alkyl group, Examples include those in which a part of hydrogen atoms are substituted with a hydroxyl group, an alkoxy group, an oxo group, an amino group, an alkylamino group, and the like, and specific examples include the following substituted alkyl groups.

R ³¹ and R ³² , R ³¹ and R ³³ , R ³² and R ³³ may combine to form a ring together with the carbon atoms to which they are bonded, and in the case of forming a ring, R ³¹ , R ³² , R ³³ represents a linear or branched alkylene group having 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms, and preferably the ring has 3 to 10 carbon atoms, particularly 4 to 10 carbon atoms.

  Specific examples of the acid labile group of the above formula (A-1) include tert-butoxycarbonyl group, tert-butoxycarbonylmethyl group, tert-amyloxycarbonyl group, tert-amyloxycarbonylmethyl group, 1,1 -Diethylpropyloxycarbonyl group, 1,1-diethylpropyloxycarbonylmethyl group, 1-ethylcyclopentyloxycarbonyl group, 1-ethylcyclopentyloxycarbonylmethyl group, 1-ethyl-2-cyclopentenyloxycarbonyl group, 1-ethyl Examples include 2-cyclopentenyloxycarbonylmethyl group, 1-ethoxyethoxycarbonylmethyl group, 2-tetrahydropyranyloxycarbonylmethyl group, 2-tetrahydrofuranyloxycarbonylmethyl group and the like. Furthermore, the substituent shown by following formula (A-1) -1-(A-1) -10 can also be mentioned.

Here, R ³⁷ is the same or different from each other, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 20 carbon atoms, R ³⁸ is a hydrogen atom, or 1 to 1 carbon atoms. 10 linear, branched or cyclic alkyl groups.
R ³⁹ is a linear, branched or cyclic alkyl group having 2 to 10 carbon atoms, or an aryl group having 6 to 20 carbon atoms. a is an integer of 0-6.

  Of the acid labile groups represented by the above formula (A-2), examples of the linear or branched groups include those of the following formulas (A-2) -1 to (A-2) -17. be able to.

  Among the acid labile groups represented by the above formula (A-2), the cyclic ones include tetrahydrofuran-2-yl group, 2-methyltetrahydrofuran-2-yl group, tetrahydropyran-2-yl group, A 2-methyltetrahydropyran-2-yl group or the like, or the following formulas (A-2) -18 to (A-2) -35 may be mentioned.

  Further, the base resin may be intermolecularly or intramolecularly crosslinked by an acid labile group represented by the general formula (A-2a) or (A-2b).

In the above formula, R ⁴⁰ and R ⁴¹ represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms. Alternatively, R ⁴⁰ and R ⁴¹ may combine to form a ring together with the carbon atom to which they are bonded, and when forming a ring, R ⁴⁰ and R ⁴¹ are linear or branched having 1 to 8 carbon atoms. -Like alkylene group. R ⁴² is a straight-chain having 1 to 10 carbon atoms, branched or cyclic alkylene group, b1, d1 is 0 or 1 to 10, preferably 0 or an integer of 1 to 5, c1 is an integer of 1-7 . A represents a (c1 + 1) -valent aliphatic or alicyclic saturated hydrocarbon group having 1 to 50 carbon atoms, an aromatic hydrocarbon group or a heterocyclic group, and these groups may intervene a hetero atom, Alternatively, a part of hydrogen atoms bonded to the carbon atom may be substituted with a hydroxyl group, a carboxyl group, a carbonyl group, or a fluorine atom. B represents —CO—O—, —NHCO—O— or —NHCONH—.

  In this case, preferably, A is a divalent to tetravalent C1-20 linear, branched or cyclic alkylene group, an alkyltriyl group, an alkyltetrayl group, or an arylene group having 6 to 30 carbon atoms. In these groups, a hetero atom may be interposed, and a part of hydrogen atoms bonded to the carbon atom may be substituted with a hydroxyl group, a carboxyl group, an acyl group, or a halogen atom. C1 is preferably an integer of 1 to 3.

  Specific examples of the crosslinked acetal groups represented by the above formulas (A-2a) and (A-2b) include those represented by the following formulas (A-2) -37 to (A-2) -44.

Next, in the above formula (A-3), R ³⁴ , R ³⁵ and R ³⁶ are monovalent hydrocarbon groups such as linear, branched or cyclic alkyl groups having 1 to 20 carbon atoms, oxygen, sulfur May contain hetero atoms such as nitrogen, fluorine, etc., and R ³⁴ and R ³⁵ , R ³⁴ and R ³⁶ , R ³⁵ and R ³⁶ are bonded to each other, and together with the carbon atoms to which these are bonded, A ring may be formed.

  As the tertiary alkyl group represented by the above formula (A-3), a tert-butyl group, a triethylcarbyl group, a 1-ethylnorbornyl group, a 1-methylcyclohexyl group, a 1-ethylcyclopentyl group, 2- (2 -Methyl) adamantyl group, 2- (2-ethyl) adamantyl group, tert-amyl group and the like.

  Specific examples of the tertiary alkyl group include the following formulas (A-3) -1 to (A-3) -18.

Among the above formula (A-3) -1~ (A -3) -18, R 43 may be the same or different number 1-8 straight, branched or cyclic alkyl group, or a carbon number 6 to 20 An aryl group such as a phenyl group of R ⁴⁴ and R ⁴⁶ independently represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms. R ⁴⁵ represents an aryl group such as a phenyl group having 6 to 20 carbon atoms.

Further, as shown in the following formulas (A-3) -19 and (A-3) -20, the polymer contains a divalent or higher valent alkylene group and R ⁴⁷ which is an arylene group, and the polymer within or between the molecules is crosslinked. May be.

In the above formulas (A-3) -19 and (A-3) -20, R ⁴³ is the same as described above, and R ⁴⁷ is a linear, branched or cyclic alkylene group having 1 to 20 carbon atoms, or a phenylene group. An arylene group such as an oxygen atom, a sulfur atom, or a nitrogen atom. e1 is an integer of 1 to 3.

R ³⁰ , R ³³ and R ³⁶ in the above formulas (A-1), (A-2) and (A-3) are a phenyl group, a p-methylphenyl group, a p-ethylphenyl group and a p-methoxyphenyl. An unsubstituted or substituted aryl group such as an alkoxy-substituted phenyl group, an aralkyl group such as a benzyl group or a phenethyl group, or a hydrogen atom that has an oxygen atom or is bonded to a carbon atom is substituted with a hydroxyl group. Or an alkyl group represented by the following formula in which two hydrogen atoms are substituted with an oxygen atom to form a carbonyl group, or an oxoalkyl group.

Further, when R ⁴ and R ⁶ in the general formula (1) are acid labile groups, the deprotection reaction is performed by heat and acid during the crosslinking of the lower layer film, and the crosslinking reaction is performed by the hydroxy group generated by the deprotection. Progresses. By preliminarily replacing the hydroxy group with an acid labile group, solubility in a solvent can be increased.

  Copolymers included in the resist underlayer film material of the present invention, that is, compounds having an extinction coefficient (k value) at a wavelength of 193 nm selected from the general formulas (2) to (7) in the range of 0.4 to 1.1 As a polymer compound having a quenching coefficient (k value) at a wavelength of 193 nm blended with one or more of 0.10 to 0.38, hydroxystyrenes or / and hydroxynaphthalenes represented by the general formula (1), norbornadiene, (Meth) acrylates, vinyl ethers, maleic anhydride, itaconic anhydride, maleimides, vinyl pyrrolidone, vinyl ethers, divinyl ethers, di (meth) acrylates, divinyl Benzenes, indenes, acenaphthylenes, styrenes, vinylnaphthalenes, vinylcarbazol , Vinyl anthracenes, norbornenes, tricyclodecene acids, can also be used those obtained by copolymerizing with other olefinic compounds, such as tetracyclododecene compounds.

  Here, a1, a2, and b are as described above. More preferably, 0.05 ≦ (a1 + a2) / (a1 + a2 + b) ≦ 0.3, 0.4 ≦ b / (a1 + a2 + b) <1.0, More preferably, 0.1 ≦ (a1 + a2) / (a1 + a2 + b) ≦ 0.3 and 0.5 ≦ b / (a1 + a2 + b) <1.0.

Moreover, when the repeating unit derived from other olefin compounds excluding the repeating units a1, a2, and b is p, it is preferable that 0 ≦ p ≦ 0.7.
And it is preferable that a1 + a2 + b + p = 1, but a1 + a2 + b + p = 1 is the total of repeating units a1, a2, b and p in a polymer compound (copolymer) containing repeating units a1, a2, b and p. It shows that the amount is 100 mol% with respect to the total amount of all repeating units.

In order to synthesize the copolymer contained in the resist underlayer film material of the present invention, one method is to substitute a substituted or unsubstituted hydroxystyrene or / and hydroxyvinylnaphthalene, norbornadiene, and a repeating unit p. One or more olefin monomers to be obtained are heated and polymerized in an organic solvent by adding a radical initiator or a cationic polymerization initiator. The hydroxy group of the monomer containing a hydroxy group can be substituted with an acetyl group, and the resulting polymer compound can be subjected to alkali hydrolysis in an organic solvent to deprotect the acetyl group. Examples of the organic solvent used at the time of polymerization include toluene, benzene, tetrahydrofuran, diethyl ether, dioxane and the like. Examples of the radical polymerization initiator include 2,2′-azobisisobutyronitrile (AIBN), 2,2′-azobis (2,4-dimethylvaleronitrile), dimethyl 2,2-azobis (2-methylpropio). Nate), benzoyl peroxide, lauroyl peroxide, and the like, preferably polymerized by heating to 50 to 80 ° C. Examples of the cationic polymerization initiator include sulfuric acid, phosphoric acid, hydrochloric acid, nitric acid, hypochlorous acid, trichloroacetic acid, trifluoroacetic acid, methanesulfonic acid, trifluoromethanesulfonic acid, camphorsulfonic acid, tosylic acid and the like, BF ₃ , AlCl _3, TiCl _4, SnCl ₄ other Friedel-Crafts catalyst such _{as, I 2, (C 6 H} 5) 3 generated material susceptible to cationic as CCl are used.

  The reaction time is 2 to 100 hours, preferably 5 to 20 hours. Ammonia water, triethylamine, etc. can be used as the base during the alkali hydrolysis. The reaction temperature during alkali hydrolysis is -20 to 100 ° C, preferably 0 to 60 ° C, and the reaction time is 0.2 to 100 hours, preferably 0.5 to 20 hours.

  The polystyrene-reduced mass average molecular weight of the copolymer (polymer compound) represented by the general formula (1) according to the present invention by gel permeation chromatography (GPC) must be 1,000 to 100,000. The range of 1,500-100,000 is preferable, More preferably, it is the range of 2,000-100,000. If it is less than 1,000, there will be a problem of becoming an outgas generation source at the time of baking, and if it is more than 100,000, there may be a problem that the solubility in a solvent may be lowered. The molecular weight distribution is not particularly limited, and low molecular weight and high molecular weight substances can be removed by fractionation to reduce the degree of dispersion. The weight of two or more general formulas (1) having different molecular weights and degrees of dispersion can be reduced. Mixtures of blends or two or more polymers of the general formula (1) having different composition ratios may be mixed.

  Further, hydrogenation is performed to further improve the transparency at a wavelength of 193 nm of the copolymer contained in the resist underlayer film material of the present invention, particularly the copolymer having the repeating unit represented by the general formula (1). be able to. A preferable hydrogenation ratio is 80 mol% or less, more preferably 60 mol% or less of the aromatic group.

  The base resin for the resist underlayer film material of the present invention includes a polymer having a repeating unit of hydroxystyrenes a1 and / or hydroxyvinylnaphthalenes a2 and a repeating unit b of norbornadiene, and the following general formulas (2) to (7): It is characterized by blending with one or more of the compounds represented by

（式中、Ｒ^７は水素原子又はメチル基、Ｒ^８は独立して単結合、炭素数１〜３０の直鎖状、分岐状、環状のアルキレン基、炭素数６〜３０のアルケニレン基、炭素数６〜３０のアリーレン基、炭素数８〜３０の芳香族骨格を含む炭化水素基のいずれかであり、縮合多環式炭化水素基を有していてもよく、また、前記炭化水素基中にヘテロ原子を含んでいてもよい。Ｒ^１０は独立して水素原子、炭素数１〜３０の直鎖状、分岐状、環状のアルキル基、炭素数６〜３０のアリール基のいずれかであり、前記アルキル基はアリール基によって置換されていてもよい。Ｒ^９、Ｒ^１１は独立して単結合又は炭素数１〜８のアルキレン基である。ｑは１〜４の正数であり、ｃは０．３≦ｃ≦１．０の範囲であり、ｄは０．４≦ｄ≦１．０、ｅは０．４≦ｅ≦１．０、の範囲である。Ｒ^１２は水素原子又は炭素数１〜４のアルキル基、Ｒ^１３、Ｒ^１４、Ｒ^１５、Ｒ^１６、Ｒ^１７は独立して炭素数６〜１６のアリーレン基又はアレーントリイル基で、ｆ、ｇ、ｈ、ｉ、ｊはそれぞれ１又は２である。）

(Wherein R ⁷ is a hydrogen atom or a methyl group, R ⁸ is independently a single bond, a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms, an alkenylene group having 6 to 30 carbon atoms, carbon Any one of an arylene group of 6 to 30 and a hydrocarbon group containing an aromatic skeleton of 8 to 30 carbon atoms, which may have a condensed polycyclic hydrocarbon group, and in the hydrocarbon group, R ¹⁰ is independently a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms. The alkyl group may be substituted with an aryl group, R ⁹ and R ¹¹ are each independently a single bond or an alkylene group having 1 to 8 carbon atoms, q is a positive number of 1 to 4, and c Is 0.3 ≦ c ≦ 1.0, d is 0.4 ≦ d ≦ 1.0, and e is 0.4. e ≦ 1.0, in the range of ^{.R 12} is an alkyl group having 1 to 4 hydrogen atoms or carbon ^{atoms, R 13, R 14, R} 15, R 16, R 17 is independently C 6 -C 16 (In the arylene group or the arenetriyl group, f, g, h, i, and j are each 1 or 2.)

  Here, the general formula (2) is hydroxystyrene or a copolymer of hydroxystyrene. In the case of copolymerization, the proportion of hydroxystyrene is preferably 35 mol% or more, and examples of the monomer to be copolymerized include styrene, vinylnaphthalene, vinylanthracene, vinylcarbazole, vinylpyrene, indene, acenaphthylene, norbornadiene and the like. .

The compound represented by the general formula (3) is a bisphenol compound, and the compound represented by the general formula (4) is a polymer (including a novolac resin) of the phenol compound represented by the general formula (3). When R ⁸ represents a hydrocarbon group containing an aromatic skeleton having 8 to 30 carbon atoms, and the hetero atom is contained in the hydrocarbon group, examples of the hetero atom include an oxygen atom, a sulfur atom, and a nitrogen atom. R ⁸ and R ⁹ are preferably an alkyl group, an aryl group, or a condensed hydrocarbon group having a total carbon number of 6 or more and 30 or less of R ⁸ and R ⁹ . Specific examples of the phenol compound represented by the general formula (3) and the phenol compound monomer for obtaining the polymer represented by the general formula (4) are shown below.

The compound represented by the general formula (5) is a phenol compound, and the compound represented by the general formula (6) is a polymer (including a novolak resin) of the phenol compound represented by the general formula (5). R ¹⁰ is preferably an alkyl group having 6 to 30 carbon atoms, an aryl group, or a condensed hydrocarbon group. Specific examples of the monomer of the phenol compound for obtaining the phenol compound represented by the general formula (5) and the polymer of the general formula (6) can be given below.

  The polymer of the phenol compound represented by the general formulas (4) and (6) may be a homopolymer or may be copolymerized. The monomer copolymerizable with the monomer corresponding to the repeating unit represented by the general formula (4) or general formula (6) is preferably a phenol-based material, specifically, phenol, o-cresol, m-cresol, p-cresol. 2,3-dimethylphenol, 2,5-dimethylphenol, 3,4-dimethylphenol, 3,5-dimethylphenol, 2,4-dimethylphenol, 2,6-dimethylphenol, 2,3,5-trimethyl Phenol, 3,4,5-trimethylphenol, 2-t-butylphenol, 3-t-butylphenol, 4-t-butylphenol, resorcinol, 2-methylresorcinol, 4-methylresorcinol, 5-methylresorcinol, catechol, 4- t-butylcatechol, 2-methoxyphenol, 3-metho Siphenol, 2-propylphenol, 3-propylphenol, 4-propylphenol, 2-isopropylphenol, 3-isopropylphenol, 4-isopropylphenol, 2-methoxy-5-methylphenol, 2-t-butyl-5 Methylphenol, pyrogallol, thymol, isothimol, 1-naphthol, 2-naphthol, 2-methyl-1-naphthol, 4-methoxy-1-naphthol, 7-methoxy-2-naphthol and 1,5-dihydroxynaphthalene, 1, Examples thereof include dihydroxynaphthalene such as 7-dihydroxynaphthalene and 2,6-dihydroxynaphthalene, methyl 3-hydroxy-naphthalene-2-carboxylate, hydroxyindene, and hydroxyanthracene.

  In addition, in order to obtain the novolak resin according to the general formula (4) and the general formula (6), a condensation reaction between a phenol compound monomer corresponding to the general formula (4) and the general formula (6) and an aldehyde is used. It is done. Examples of aldehydes used here include formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde, α-phenylpropylaldehyde, β-phenylpropylaldehyde, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p. -Hydroxybenzaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde, p-chlorobenzaldehyde, o-nitrobenzaldehyde, m-nitrobenzaldehyde, p-nitrobenzaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-methylbenzaldehyde, p -Ethylbenzaldehyde, pn-butylbenzaldehyde, furfural, etc. Can be mentioned. Of these, formaldehyde can be particularly preferably used. These aldehydes can be used alone or in combination of two or more. 0.2-5 mol is preferable with respect to 1 mol of phenols, and, as for the usage-amount of the said aldehyde, More preferably, it is 0.5-2 mol.

  Monomers other than phenol include unsaturated alicyclic compounds, and specifically include dicyclopentadiene, bicyclo (4,3,0) nona-3,7-diene, 4-vinylcyclohexene, norbornadiene, 5- Examples thereof include, but are not limited to, vinyl norborn-2-ene, α-pinene, β-pinene, and limonene. Of these, dicyclopentadiene is particularly preferably used. Dicyclopentadiene is a dimer of cyclopentadiene, and there are two isomers, an endo isomer and an exo isomer, but dicyclopentadiene that is a raw material for the resin used in the present invention is any isomer. It may also be a mixture of two isomers. When a mixture of isomers is used, the ratio of isomers is not particularly limited. When the phenolic compound represented by the general formulas (3) and (5) is copolymerized with such an unsaturated alicyclic compound, the unsaturated alicyclic compound and phenols are subjected to an addition reaction in the presence of an acid catalyst. It is preferable.

  The acid catalyst used in the reaction is an ethanol complex of boron trifluoride, a Lewis acid such as aluminum chloride, an inorganic acid such as hydrochloric acid, nitric acid, sulfuric acid, methanesulfonic acid, n-butanesulfonic acid, benzenesulfonic acid, p-toluenesulfone. Super strong acids such as acids, m-xylene sulfonic acid, p-xylene sulfonic acid, sulfonic acid such as mesitylene sulfonic acid, perfluorosulfonic acid such as trifluoromethane sulfonic acid, nonafluoromethane sulfonic acid, pentafluorobenzene sulfonic acid And perfluoroalkyl polymers having terminal sulfonic acid groups such as Nafion, anion exchange resins such as polystyrene having sulfonic acid residues, and the like. In particular, methanesulfonic acid, tosylic acid, and trifluoromethanesulfonic acid are preferable, and the amount used is 0.01 to 10% by mass, preferably 0.05 to 5% by mass with respect to the raw material in the case of methanesulfonic acid. In the case of tosylic acid, it is in the range of 0.001 to 10% by mass, preferably 0.005 to 5% by mass, and in the case of trifluoromethanesulfonic acid, 0.0001 to 5% by mass, preferably 0.0005 to 1%. It is the range of mass%.

  The ratio of the phenol and unsaturated alicyclic compound is preferably 0.1 to 2.0 mol, more preferably 0.2 to 1.8 mol of the unsaturated alicyclic compound with respect to 1 mol of phenol. is there.

  The reaction is classified into a first stage in which an unsaturated alicyclic compound undergoes an addition reaction with a hydroxyl group of a phenol and etherifies, and a second stage in which the ether body forms a phenol resin by a transfer reaction. The reaction temperature is preferably 20 to 200 ° C, more preferably 40 to 160 ° C. After completion of the reaction, the unreacted phenol compound can be distilled off by any method to obtain a phenol-unsaturated alicyclic compound resin, but when used for the purpose of the present invention, a washing step is introduced. Is desirable. The cleaning method may be any method. For example, an alkali metal hydroxide is used to remove components that are insoluble in water as an alkali metal salt, aromatic hydrocarbons such as toluene and xylene, and methyl ethyl ketone. , A method of washing with water using an organic solvent such as ketones such as methyl isobutyl ketone, amyl alcohol, isoamyl alcohol, heptanol, 2-heptanol, octanol, isooctanol and the like, and washing with dilute hydrochloric acid using the above organic solvent And a method of treating with an adsorbent such as silica gel, alumina and activated carbon using a solvent such as 1,2-dichloroethane, chloroform, methyl cellosolve, ethyl cellosolve, dimethylformamide and dimethylacetamide. It is desirable to reduce impurities such as gel components, acidic components, and metal ions as much as possible by any of these methods, or a combination of these methods.

  The polymers according to general formula (4) and general formula (6) preferably have a mass average molecular weight in the range of 1,500 to 200,000, more preferably in the range of 2,000 to 10,000. The molecular weight distribution is not particularly limited, and it is possible to remove low molecular weight and high molecular weight materials by fractionation to reduce the degree of dispersion. Two or more phenols-unsaturated alicyclics having different molecular weights and degrees of dispersion Mixtures of formula compound resins or two or more phenols-unsaturated alicyclic compound resins having different composition ratios may be mixed.

  In addition, the compound shown by General formula (7) is a fullerene compound which has a phenol group shown by Unexamined-Japanese-Patent No. 2006-227398.

  As performance required for the resist lower layer film, there is no intermixing with the resist upper layer film, and there is no diffusion of low molecular components into the resist upper layer film (for example, “Proc. SPIE vol. 2195”). P225-229 (1994). In order to prevent these problems, a method is generally employed in which a resist underlayer film is formed on a substrate by spin coating or the like and then thermally crosslinked by baking. Therefore, there are a method of adding a crosslinking agent as a component of the resist underlayer film material and a method of introducing a crosslinkable substituent into the polymer.

  In the resist underlayer film material of the present invention, a crosslinking agent having a crosslinkable group can also be added. Specific examples of the crosslinking agent that can be used in the present invention include a melamine compound, a guanamine compound, a glycoluril compound, or a urea compound substituted with at least one group selected from a methylol group, an alkoxymethyl group, and an acyloxymethyl group. Examples include compounds containing double bonds such as epoxy compounds, isocyanate compounds, azide compounds, and alkenyl ether groups. These may be used as additives, but can also be introduced as pendant groups in the polymer side chain.

In the resist underlayer film material of the present invention, an acid generator can be added in order to promote the crosslinking reaction. As an acid generator used in the resist underlayer film material of the present invention,
i. An onium salt of the following general formula (P1a-1), (P1a-2), (P1a-3) or (P1b),
ii. A diazomethane derivative of the following general formula (P2):
iii. A glyoxime derivative of the following general formula (P3):
iv. A bissulfone derivative of the following general formula (P4):
v. A sulfonic acid ester of an N-hydroxyimide compound of the following general formula (P5),
vi. β-ketosulfonic acid derivatives,
vii. Disulfone derivatives,
viii. Nitrobenzyl sulfonate derivatives,
ix. Examples thereof include sulfonic acid ester derivatives.

（式中、Ｒ^１０１ａ、Ｒ^１０１ｂ、Ｒ^１０１ｃはそれぞれ炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基、アルケニル基、オキソアルキル基又はオキソアルケニル基、炭素数６〜２０のアリール基、又は炭素数７〜１２のアラルキル基又はアリールオキソアルキル基を示し、これらの基の水素原子の一部又は全部がアルコキシ基等によって置換されていてもよい。また、Ｒ^１０１ｂとＲ^１０１ｃとは環を形成してもよく、環を形成する場合には、Ｒ^１０１ｂ、Ｒ^１０１ｃはそれぞれ炭素数１〜６のアルキレン基を示す。Ｋ^-は非求核性対向イオンを表す。Ｒ^１０１ｄ、Ｒ^１０１ｅ、Ｒ^１０１ｆ、Ｒ^１０１ｇは、Ｒ^１０１ａ、Ｒ^１０１ｂ、Ｒ^１０１ｃに水素原子を加えて示される。Ｒ^１０１ｄとＲ^１０１ｅ、Ｒ^１０１ｄとＲ^１０１ｅとＲ^１０１ｆとは環を形成してもよく、環を形成する場合には、Ｒ^１０１ｄとＲ^１０１ｅ及びＲ^１０１ｄとＲ^１０１ｅとＲ^１０１ｆは炭素数３〜１０のアルキレン基、又は図中の窒素原子を環の中に有する複素芳香族環を示す。）

Wherein R ^101a , R ^101b and R ^101c are each a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, an alkenyl group, an oxoalkyl group or an oxoalkenyl group, and an aryl having 6 to 20 carbon atoms. Group, an aralkyl group having 7 to 12 carbon atoms or an aryloxoalkyl group, and a part or all of hydrogen atoms of these groups may be substituted with an alkoxy group, etc. In addition, R ^101b and R ^{101c May} form a ring, and in the case of forming a ring, R ^101b and R ^101c each represent an alkylene group having 1 to 6 carbon atoms, K ⁻ represents a non-nucleophilic counter ion, R ^101d , R ^101e , R ^101f , and R ^101g are shown by adding a hydrogen atom to R ^101a , R ^101b , and R ^101c , R ^101d , R ^101e , and R ^{101 d} and R ^101e and R ^101f may form a ring, and in the case of forming a ring, R ^101d and R ^101e and R ^101d , R ^101e and R ^101f are alkylene groups having 3 to 10 carbon atoms, or (A heteroaromatic ring having a nitrogen atom in the ring is shown.)

R ^101a , R ^101b , R ^101c , R ^101d , R ^101e , R ^101f , and R ^101g may be the same as or different from each other. Specifically, as an alkyl group, a methyl group, an ethyl group, a propyl group , Isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group, octyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclopropylmethyl group, 4-methylcyclohexyl Group, cyclohexylmethyl group, norbornyl group, adamantyl group and the like. Examples of the alkenyl group include a vinyl group, an allyl group, a propenyl group, a butenyl group, a hexenyl group, and a cyclohexenyl group. Examples of the oxoalkyl group include 2-oxocyclopentyl group, 2-oxocyclohexyl group, and the like. 2-oxopropyl group, 2-cyclopentyl-2-oxoethyl group, 2-cyclohexyl-2-oxoethyl group, 2- (4 -Methylcyclohexyl) -2-oxoethyl group and the like can be mentioned. Examples of the oxoalkenyl group include 2-oxo-4-cyclohexenyl group and 2-oxo-4-propenyl group. Examples of the aryl group include a phenyl group, a naphthyl group, a p-methoxyphenyl group, an m-methoxyphenyl group, an o-methoxyphenyl group, an ethoxyphenyl group, a p-tert-butoxyphenyl group, and an m-tert-butoxyphenyl group. Alkylphenyl groups such as alkoxyphenyl groups, 2-methylphenyl groups, 3-methylphenyl groups, 4-methylphenyl groups, ethylphenyl groups, 4-tert-butylphenyl groups, 4-butylphenyl groups, dimethylphenyl groups, etc. Alkyl naphthyl groups such as methyl naphthyl group and ethyl naphthyl group, alkoxy naphthyl groups such as methoxy naphthyl group and ethoxy naphthyl group, dialkyl naphthyl groups such as dimethyl naphthyl group and diethyl naphthyl group, dimethoxy naphthyl group and diethoxy naphthyl group Dialkoxynaphthyl group And the like. Examples of the aralkyl group include a benzyl group, a phenylethyl group, and a phenethyl group. As the aryloxoalkyl group, 2-aryl-2-oxoethyl group such as 2-phenyl-2-oxoethyl group, 2- (1-naphthyl) -2-oxoethyl group, 2- (2-naphthyl) -2-oxoethyl group and the like Groups and the like. K ^- a non-nucleophilic counter chloride ions as the ion, halide ions such as bromide ion, triflate, 1,1,1-trifluoroethane sulfonate, fluoroalkyl sulfonate such as nonafluorobutanesulfonate, tosylate, benzenesulfonate , 4-fluorobenzenesulfonate, arylsulfonates such as 1,2,3,4,5-pentafluorobenzenesulfonate, alkylsulfonates such as mesylate and butanesulfonate, bis (trifluoromethylsulfonyl) imide, bis (perfluoroethylsulfonyl) ) Imido acids such as imide and bis (perfluorobutylsulfonyl) imide, methide acids such as tris (trifluoromethylsulfonyl) methide and tris (perfluoroethylsulfonyl) methide, and Sulfonates formula (K-2) position alpha shown is fluoro substituted, as shown in (K-1), α, β, position γ can be mentioned sulfonates which are fluoro substituted.

In general formula (K-1), ^R102 is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, an acyl group, an alkenyl group having 2 to 20 carbon atoms, or 6 to 20 carbon atoms. An aryl group and an aryloxy group. In general formula (K-2), ^R103 is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, or an aryl group having 6 to 20 carbon atoms. It is.

In addition, R ^101d , R ^101e , R ^101f , and R ^{101g each} have a heteroaromatic ring having a nitrogen atom in the formula as an imidazole derivative (for example, imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole). Etc.), pyrazole derivatives, furazane derivatives, pyrroline derivatives (eg pyrroline, 2-methyl-1-pyrroline etc.), pyrrolidine derivatives (eg pyrrolidine, N-methylpyrrolidine, pyrrolidinone, N-methylpyrrolidone etc.), imidazoline derivatives, imidazolidine Derivatives, pyridine derivatives (eg pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4- (1-butylpentyl) pyridine, dimethylpyridine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl 2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridone, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine 2- (1-ethylpropyl) pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives 1H-indazole derivative, indoline derivative, quinoline derivative (for example, quinoline, 3-quinolinecarbonitrile, etc.), isoquinoline derivative, cinnoline derivative, quinazoline derivative, quinoki Phosphorus derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives Etc. are exemplified.

  (P1a-1) and (P1a-2) have the effects of both a photoacid generator and a thermal acid generator, while (P1a-3) acts as a thermal acid generator.

（式中、Ｒ^１０２ａ、Ｒ^１０２ｂはそれぞれ炭素数１〜８の直鎖状、分岐状又は環状のアルキル基を示す。Ｒ^１０３は炭素数１〜１０の直鎖状、分岐状又は環状のアルキレン基を示す。Ｒ^１０４ａ、Ｒ^１０４ｂはそれぞれ炭素数３〜７の２−オキソアルキル基を示す。Ｋ^-は非求核性対向イオンを表す。）

(Wherein R ^102a and R ^102b each represent a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms. R ¹⁰³ is a linear, branched or cyclic alkylene having 1 to 10 carbon atoms. R ^104a and R ^104b each represent a 2-oxoalkyl group having 3 to 7 carbon atoms, and K ⁻ represents a non-nucleophilic counter ion.)

Specific examples of the alkyl group of R ^102a and R ^102b include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, a pentyl group, a hexyl group, and a heptyl group. Octyl group, cyclopentyl group, cyclohexyl group, cyclopropylmethyl group, 4-methylcyclohexyl group, cyclohexylmethyl group and the like. As the alkylene group for R ¹⁰³ , methylene group, ethylene group, propylene group, butylene group, pentylene group, hexylene group, heptylene group, octylene group, nonylene group, 1,4-cyclohexylene group, 1,2- Examples include cyclohexylene group, 1,3-cyclopentylene group, 1,4-cyclooctylene group, 1,4-cyclohexanedimethylene group and the like. ^Examples of the 2-oxoalkyl group of R ^104a and R ^104b include a 2-oxopropyl group, a 2-oxocyclopentyl group, a 2-oxocyclohexyl group, and a 2-oxocycloheptyl group. Examples of K ⁻ are the same as those described in the general formulas (P1a-1), (P1a-2), and (P1a-3).

（式中、Ｒ^１０５、Ｒ^１０６は炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基又はハロゲン化アルキル基、炭素数６〜２０のアリール基又はハロゲン化アリール基、又は炭素数７〜１２のアラルキル基を示す。）

(Wherein R ¹⁰⁵ and R ^{106 each} represent a linear, branched or cyclic alkyl group or halogenated alkyl group having 1 to 12 carbon atoms, an aryl group or halogenated aryl group having 6 to 20 carbon atoms, or a carbon number) 7 to 12 aralkyl groups are shown.)

^Examples of the alkyl group of R ¹⁰⁵ and R ¹⁰⁶ include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group, octyl group, amyl Group, cyclopentyl group, cyclohexyl group, cycloheptyl group, norbornyl group, adamantyl group and the like. Examples of the halogenated alkyl group include a trifluoromethyl group, a 1,1,1-trifluoroethyl group, a 1,1,1-trichloroethyl group, and a nonafluorobutyl group. As the aryl group, an alkoxyphenyl group such as a phenyl group, p-methoxyphenyl group, m-methoxyphenyl group, o-methoxyphenyl group, ethoxyphenyl group, p-tert-butoxyphenyl group, m-tert-butoxyphenyl group, Examples thereof include alkylphenyl groups such as 2-methylphenyl group, 3-methylphenyl group, 4-methylphenyl group, ethylphenyl group, 4-tert-butylphenyl group, 4-butylphenyl group, and dimethylphenyl group. Examples of the halogenated aryl group include a fluorophenyl group, a chlorophenyl group, and 1,2,3,4,5-pentafluorophenyl group. Examples of the aralkyl group include a benzyl group and a phenethyl group.

（式中、Ｒ^１０７、Ｒ^１０８、Ｒ^１０９は炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基又はハロゲン化アルキル基、炭素数６〜２０のアリール基又はハロゲン化アリール基、又は炭素数７〜１２のアラルキル基を示す。Ｒ^１０８、Ｒ^１０９は互いに結合して環状構造を形成してもよく、環状構造を形成する場合、Ｒ^１０８、Ｒ^１０９はそれぞれ炭素数１〜６の直鎖状又は分岐状のアルキレン基を示す。Ｒ^１０５は一般式（Ｐ２）のものと同様である。）

(Wherein R ¹⁰⁷ , R ¹⁰⁸ and R ¹⁰⁹ are each a linear, branched or cyclic alkyl group or halogenated alkyl group having 1 to 12 carbon atoms, an aryl group or halogenated aryl group having 6 to 20 carbon atoms, Or an aralkyl group having 7 to 12 carbon atoms, R ¹⁰⁸ and R ¹⁰⁹ may be bonded to each other to form a cyclic structure, and in the case of forming a cyclic structure, R ¹⁰⁸ and R ¹⁰⁹ each have 1 to 6 carbon atoms. And R ¹⁰⁵ is the same as that in formula (P2).

Examples of the alkyl group, halogenated alkyl group, aryl group, halogenated aryl group, and aralkyl group of R ¹⁰⁷ , R ¹⁰⁸ , and R ¹⁰⁹ include the same groups as those described for R ¹⁰⁵ and R ¹⁰⁶ . ^Examples of the alkylene group for R ¹⁰⁸ and R ¹⁰⁹ include a methylene group, an ethylene group, a propylene group, a butylene group, and a hexylene group.

（式中、Ｒ^１０１ａ、Ｒ^１０１ｂは前記と同様である。）

(Wherein, R ^101a and R ^101b are the same as described above.)

（式中、Ｒ^１１０は炭素数６〜１０のアリーレン基、炭素数１〜６のアルキレン基又は炭素数２〜６のアルケニレン基を示し、これらの基の水素原子の一部又は全部は更に炭素数１〜４の直鎖状又は分岐状のアルキル基又はアルコキシ基、ニトロ基、アセチル基、又はフェニル基で置換されていてもよい。Ｒ^１１１は炭素数１〜８の直鎖状、分岐状又は置換のアルキル基、アルケニル基又はアルコキシアルキル基、フェニル基、又はナフチル基を示し、これらの基の水素原子の一部又は全部は更に炭素数１〜４のアルキル基又はアルコキシ基；炭素数１〜４のアルキル基、アルコキシ基、ニトロ基又はアセチル基で置換されていてもよいフェニル基；炭素数３〜５のヘテロ芳香族基；又は塩素原子、フッ素原子で置換されていてもよい。）

(In the formula, R ¹¹⁰ represents an arylene group having 6 to 10 carbon atoms, an alkylene group having 1 to 6 carbon atoms, or an alkenylene group having 2 to 6 carbon atoms, and some or all of the hydrogen atoms of these groups are further carbon atoms. It may be substituted with a linear or branched alkyl group or alkoxy group having a number of 1 to 4, a nitro group, an acetyl group, or a phenyl group, and R ¹¹¹ is a linear or branched group having 1 to 8 carbon atoms. Or a substituted alkyl group, an alkenyl group or an alkoxyalkyl group, a phenyl group, or a naphthyl group, and part or all of the hydrogen atoms of these groups are further an alkyl group or alkoxy group having 1 to 4 carbon atoms; A phenyl group which may be substituted with an alkyl group of 4 to 4, an alkoxy group, a nitro group or an acetyl group; a heteroaromatic group having 3 to 5 carbon atoms; or a phenyl group which may be substituted with a chlorine atom or a fluorine atom.

Here, as the arylene group of R ¹¹⁰ , 1,2-phenylene group, 1,8-naphthylene group, etc., and as the alkylene group, methylene group, ethylene group, trimethylene group, tetramethylene group, phenylethylene group, norbornane Examples of the alkenylene group such as -2,3-diyl group include 1,2-vinylene group, 1-phenyl-1,2-vinylene group, 5-norbornene-2,3-diyl group and the like. The alkyl group of R ¹¹¹ is the same as R ^{101a to} R ^101c, and the alkenyl group is a vinyl group, 1-propenyl group, allyl group, 1-butenyl group, 3-butenyl group, isoprenyl group, 1- Pentenyl group, 3-pentenyl group, 4-pentenyl group, dimethylallyl group, 1-hexenyl group, 3-hexenyl group, 5-hexenyl group, 1-heptenyl group, 3-heptenyl group, 6-heptenyl group, 7-octenyl Groups such as alkoxyalkyl groups include methoxymethyl, ethoxymethyl, propoxymethyl, butoxymethyl, pentyloxymethyl, hexyloxymethyl, heptyloxymethyl, methoxyethyl, ethoxyethyl, Propoxyethyl group, butoxyethyl group, pentyloxyethyl group, hexyloxyethyl group Methoxypropyl group, ethoxypropyl group, propoxypropyl group, butoxypropyl group, methoxybutyl group, ethoxybutyl group, propoxybutyl group, methoxypentyl group, ethoxypentyl group, methoxyhexyl group, methoxyheptyl group and the like.

  In addition, examples of the optionally substituted alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a tert-butyl group. As the alkoxy group of ˜4, a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group, a tert-butoxy group and the like are an alkyl group having 1 to 4 carbon atoms, an alkoxy group, and a nitro group. As the phenyl group which may be substituted with an acetyl group, a phenyl group, a tolyl group, a p-tert-butoxyphenyl group, a p-acetylphenyl group, a p-nitrophenyl group, etc. are heterocycles having 3 to 5 carbon atoms. Examples of the aromatic group include a pyridyl group and a furyl group.

  Specific examples of the acid generator include onium salts such as tetramethylammonium trifluoromethanesulfonate, tetramethylammonium nonafluorobutanesulfonate, triethylammonium nonafluorobutanesulfonate, pyridinium nonafluorobutanesulfonate, camphorsulfone. Triethylammonium acid, pyridinium camphorsulfonate, tetra-n-butylammonium nonafluorobutanesulfonate, tetraphenylammonium nonafluorobutanesulfonate, tetramethylammonium p-toluenesulfonate, diphenyliodonium trifluoromethanesulfonate, trifluoromethanesulfonic acid ( p-tert-butoxyphenyl) phenyliodonium, p-toluenesulfonic acid diphenyliodo , P-toluenesulfonic acid (p-tert-butoxyphenyl) phenyliodonium, trifluoromethanesulfonic acid triphenylsulfonium, trifluoromethanesulfonic acid (p-tert-butoxyphenyl) diphenylsulfonium, trifluoromethanesulfonic acid bis (p-tert -Butoxyphenyl) phenylsulfonium, trifluoromethanesulfonic acid tris (p-tert-butoxyphenyl) sulfonium, p-toluenesulfonic acid triphenylsulfonium, p-toluenesulfonic acid (p-tert-butoxyphenyl) diphenylsulfonium, p-toluene Bis (p-tert-butoxyphenyl) sulfonic acid phenylsulfonium, Tris (p-tert-butoxyphenyl) p-toluenesulfonic acid Sulfonium, triphenylsulfonium nonafluorobutanesulfonate, triphenylsulfonium butanesulfonate, trimethylsulfonium trifluoromethanesulfonate, trimethylsulfonium p-toluenesulfonate, cyclohexylmethyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, p-toluene Cyclohexylmethyl (2-oxocyclohexyl) sulfonium sulfonate, dimethylphenylsulfonium trifluoromethanesulfonate, dimethylphenylsulfonium p-toluenesulfonate, dicyclohexylphenylsulfonium trifluoromethanesulfonate, dicyclohexylphenylsulfonium p-toluenesulfonate, trifluoromethanesulfonic acid Trinaphthylsulfoni , Trifluoromethanesulfonic acid (2-norbornyl) methyl (2-oxocyclohexyl) sulfonium, ethylenebis [methyl (2-oxocyclopentyl) sulfonium trifluoromethanesulfonate], 1,2'-naphthylcarbonylmethyltetrahydrothiophenium trif And onium salts such as triethylammonium nonaflate, tributylammonium nonaflate, tetraethylammonium nonaflate, tetrabutylammonium nonaflate, triethylammonium bis (trifluoromethylsulfonyl) imide, triethylammonium tris (perfluoroethylsulfonyl) methide be able to.

  Diazomethane derivatives include bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (xylenesulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (cyclopentylsulfonyl) diazomethane, bis (n-butylsulfonyl) diazomethane Bis (isobutylsulfonyl) diazomethane, bis (sec-butylsulfonyl) diazomethane, bis (n-propylsulfonyl) diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane, bis (n-amylsulfonyl) diazomethane Bis (isoamylsulfonyl) diazomethane, bis (sec-amylsulfonyl) diazomethane, bis (tert-amylsulfur) Nyl) diazomethane, 1-cyclohexylsulfonyl-1- (tert-butylsulfonyl) diazomethane, 1-cyclohexylsulfonyl-1- (tert-amylsulfonyl) diazomethane, 1-tert-amylsulfonyl-1- (tert-butylsulfonyl) diazomethane And the like.

  Examples of glyoxime derivatives include bis-O- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-O- (p-toluenesulfonyl) -α-diphenylglyoxime, bis-O- (p-toluenesulfonyl)- α-dicyclohexylglyoxime, bis-O- (p-toluenesulfonyl) -2,3-pentanedione glyoxime, bis-O- (p-toluenesulfonyl) -2-methyl-3,4-pentanedione glyoxime, Bis-O- (n-butanesulfonyl) -α-dimethylglyoxime, bis-O- (n-butanesulfonyl) -α-diphenylglyoxime, bis-O- (n-butanesulfonyl) -α-dicyclohexylglyoxime Bis-O- (n-butanesulfonyl) -2,3-pentanedione glyoxime, bis-O- ( -Butanesulfonyl) -2-methyl-3,4-pentanedione glyoxime, bis-O- (methanesulfonyl) -α-dimethylglyoxime, bis-O- (trifluoromethanesulfonyl) -α-dimethylglyoxime, bis -O- (1,1,1-trifluoroethanesulfonyl) -α-dimethylglyoxime, bis-O- (tert-butanesulfonyl) -α-dimethylglyoxime, bis-O- (perfluorooctanesulfonyl)- α-dimethylglyoxime, bis-O- (cyclohexanesulfonyl) -α-dimethylglyoxime, bis-O- (benzenesulfonyl) -α-dimethylglyoxime, bis-O- (p-fluorobenzenesulfonyl) -α- Dimethylglyoxime, bis-O- (p-tert-butylbenzenesulfonyl) α- dimethylglyoxime, bis -O- (xylene sulfonyl)-.alpha.-dimethylglyoxime, and bis -O- (camphorsulfonyl)-.alpha.-glyoxime derivatives such as dimethylglyoxime.

  Examples of bissulfone derivatives include bisnaphthylsulfonylmethane, bistrifluoromethylsulfonylmethane, bismethylsulfonylmethane, bisethylsulfonylmethane, bispropylsulfonylmethane, bisisopropylsulfonylmethane, bis-p-toluenesulfonylmethane, and bisbenzenesulfonylmethane. Bissulfone derivatives can be mentioned.

  Examples of β-ketosulfone derivatives include β-ketosulfone derivatives such as 2-cyclohexylcarbonyl-2- (p-toluenesulfonyl) propane and 2-isopropylcarbonyl-2- (p-toluenesulfonyl) propane.

  Examples of the disulfone derivative include disulfone derivatives such as diphenyl disulfone derivatives and dicyclohexyl disulfone derivatives.

  Examples of the nitrobenzyl sulfonate derivative include nitrobenzyl sulfonate derivatives such as 2,6-dinitrobenzyl p-toluenesulfonate and 2,4-dinitrobenzyl p-toluenesulfonate.

  Examples of sulfonic acid ester derivatives include 1,2,3-tris (methanesulfonyloxy) benzene, 1,2,3-tris (trifluoromethanesulfonyloxy) benzene, 1,2,3-tris (p-toluenesulfonyloxy). Mention may be made of sulfonic acid ester derivatives such as benzene.

  Examples of sulfonic acid ester derivatives of N-hydroxyimide compounds include N-hydroxysuccinimide methanesulfonic acid ester, N-hydroxysuccinimide trifluoromethanesulfonic acid ester, N-hydroxysuccinimide ethanesulfonic acid ester, N-hydroxysuccinimide 1-propanesulfonic acid. Ester, N-hydroxysuccinimide 2-propanesulfonic acid ester, N-hydroxysuccinimide 1-pentanesulfonic acid ester, N-hydroxysuccinimide 1-octanesulfonic acid ester, N-hydroxysuccinimide p-toluenesulfonic acid ester, N-hydroxysuccinimide p-methoxybenzenesulfonic acid ester, N-hydroxysuccinimide 2-chloroethanesulfonic acid ester N-hydroxysuccinimide benzenesulfonic acid ester, N-hydroxysuccinimide-2,4,6-trimethylbenzenesulfonic acid ester, N-hydroxysuccinimide 1-naphthalenesulfonic acid ester, N-hydroxysuccinimide 2-naphthalenesulfonic acid ester, N- Hydroxy-2-phenylsuccinimide methanesulfonate, N-hydroxymaleimide methanesulfonate, N-hydroxymaleimide ethanesulfonate, N-hydroxy-2-phenylmaleimide methanesulfonate, N-hydroxyglutarimide methanesulfonate Ester, N-hydroxyglutarimide benzenesulfonic acid ester, N-hydroxyphthalimide methanesulfonic acid ester, N-hydro Siphthalimidobenzenesulfonic acid ester, N-hydroxyphthalimide trifluoromethanesulfonic acid ester, N-hydroxyphthalimide p-toluenesulfonic acid ester, N-hydroxynaphthalimide methanesulfonic acid ester, N-hydroxynaphthalimide benzenesulfonic acid ester, N- Hydroxy-5-norbornene-2,3-dicarboximide methanesulfonate, N-hydroxy-5-norbornene-2,3-dicarboximide trifluoromethanesulfonate, N-hydroxy-5-norbornene-2,3 -Sulphonic acid ester derivatives of N-hydroxyimide compounds such as dicarboximide p-toluenesulfonic acid ester.

In particular, triphenylsulfonium trifluoromethanesulfonate, trifluoromethanesulfonate (p-tert-butoxyphenyl) diphenylsulfonium, tris (p-tert-butoxyphenyl) sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate, p -Toluenesulfonic acid (p-tert-butoxyphenyl) diphenylsulfonium, p-toluenesulfonic acid tris (p-tert-butoxyphenyl) sulfonium, trifluoromethanesulfonic acid trinaphthylsulfonium, trifluoromethanesulfonic acid cyclohexylmethyl (2-oxocyclohexyl) ) Sulfonium, (2-norbornyl) methyl (2-oxocyclohexyl) sulfonyl trifluoromethanesulfonate Onium salts such as 1,2′-naphthylcarbonylmethyltetrahydrothiophenium triflate, bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (n-butylsulfonyl) Diazomethane derivatives such as diazomethane, bis (isobutylsulfonyl) diazomethane, bis (sec-butylsulfonyl) diazomethane, bis (n-propylsulfonyl) diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane, bis-O -Glyoxime derivatives such as-(p-toluenesulfonyl) -α-dimethylglyoxime and bis-O- (n-butanesulfonyl) -α-dimethylglyoxime, bisnaphthyl Bissulfone derivatives such as sulfonylmethane, N-hydroxysuccinimide methanesulfonate, N-hydroxysuccinimide trifluoromethanesulfonate, N-hydroxysuccinimide 1-propanesulfonate, N-hydroxysuccinimide 2-propanesulfonate, N- Hydroxysuccinimide 1-pentanesulfonic acid ester, N-hydroxysuccinimide p-toluenesulfonic acid ester, N-hydroxynaphthalimide methanesulfonic acid ester, N-hydroxynaphthalimide benzenesulfonic acid ester, etc. Derivatives are preferably used.
In addition, the said acid generator can be used individually by 1 type or in combination of 2 or more types.

    The addition amount of the acid generator is preferably 0.1 to 50 parts, more preferably 0.5 to 40 parts with respect to 100 parts of the base polymer. If it is 0.1 part or more, a sufficient acid generation amount can be obtained, and there is no fear that the crosslinking reaction becomes insufficient. If it is 50 parts or less, a mixing phenomenon occurs due to the acid moving to the upper resist film. There is little fear.

Furthermore, the resist underlayer film material of the present invention can be blended with a basic compound for improving storage stability.
The basic compound serves as a quencher for the acid to prevent the acid generated in a trace amount from the acid generator during storage and the like from causing the crosslinking reaction to proceed.

  Examples of such basic compounds include primary, secondary, and tertiary aliphatic amines, hybrid amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxy group, and sulfonyl groups. A nitrogen-containing compound having a hydroxyl group, a nitrogen-containing compound having a hydroxyl group, a nitrogen-containing compound having a hydroxyphenyl group, an alcoholic nitrogen-containing compound, an amide derivative, an imide derivative, and the like.

  Specifically, primary aliphatic amines include ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert- Amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, etc. are exemplified as secondary aliphatic amines. Dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, disi Lopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N, N-dimethylmethylenediamine, N, N-dimethylethylenediamine, N, N-dimethyltetraethylenepenta Examples of tertiary aliphatic amines include trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, and tripentylamine. , Tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, Examples include cetylamine, N, N, N ′, N′-tetramethylmethylenediamine, N, N, N ′, N′-tetramethylethylenediamine, N, N, N ′, N′-tetramethyltetraethylenepentamine and the like. Is done.

  Examples of hybrid amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, and benzyldimethylamine.

  Specific examples of aromatic amines and heterocyclic amines include aniline derivatives (eg, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N, N-dimethylaniline, 2-methylaniline, 3- Methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5- Dinitroaniline, N, N-dimethyltoluidine, etc.), diphenyl (p-tolyl) amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (eg pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dim Lupyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, etc.), oxazole derivatives (eg oxazole, isoxazole etc.), thiazole derivatives (eg thiazole, isothiazole etc.), imidazole derivatives (eg imidazole, 4-methylimidazole, 4 -Methyl-2-phenylimidazole, etc.), pyrazole derivatives, furazane derivatives, pyrroline derivatives (eg pyrroline, 2-methyl-1-pyrroline etc.), pyrrolidine derivatives (eg pyrrolidine, N-methylpyrrolidine, pyrrolidinone, N-methylpyrrolidone etc.) ), Imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (eg pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4- (1-butylpentyl) pyridine, dimethyl) Lysine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridone, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2- (1-ethylpropyl) pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine Derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoline derivatives, quinoline derivatives (eg quinoline, 3-quinoline carbo Nitriles), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine Examples include derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives and the like.

  Furthermore, examples of the nitrogen-containing compound having a carboxy group include aminobenzoic acid, indolecarboxylic acid, amino acid derivatives (for example, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine. , Phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine) and the like, and examples of the nitrogen-containing compound having a sulfonyl group include 3-pyridinesulfonic acid, pyridinium p-toluenesulfonate, and the like. Nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, and alcoholic nitrogen-containing compounds include 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, and 3-indolemethanol. Drate, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N, N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol 4-amino-1-butanol, 4- (2-hydroxyethyl) morpholine, 2- (2-hydroxyethyl) pyridine, 1- (2-hydroxyethyl) piperazine, 1- [2- (2-hydroxyethoxy) Ethyl] piperazine, piperidineethanol, 1- (2-hydroxyethyl) pyrrolidine, 1- (2-hydroxyethyl) -2-pyrrolidinone, 3-piperidino-1,2-propanediol, 3-pyrrolidino-1,2-propane Diol, 8-hydroxyuroli , 3-cuincridinol, 3-tropanol, 1-methyl-2-pyrrolidineethanol, 1-aziridineethanol, N- (2-hydroxyethyl) phthalimide, N- (2-hydroxyethyl) isonicotinamide, etc. Illustrated.

Examples of the amide derivatives include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, propionamide, benzamide and the like.
Examples of the imide derivative include phthalimide, succinimide, maleimide and the like.

  The compounding amount of the basic compound is suitably 0.001 to 2 parts, particularly 0.01 to 1 part, based on 100 parts of the total base polymer. If the blending amount is 0.001 part or more, the blending effect is sufficiently obtained, and if it is 2 parts or less, the possibility of trapping all of the acid generated by heat and not crosslinking is reduced.

  The organic solvent that can be used in the resist underlayer film material of the present invention is not particularly limited as long as it dissolves the base polymer, acid generator, crosslinking agent, and other additives. Specific examples thereof include ketones such as cyclohexanone and methyl-2-amyl ketone; 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol and the like. Alcohols: ethers such as propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether; propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, lactic acid Ethyl, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate , Tert-butyl acetate, tert-butyl propionate, propylene glycol monomethyl ether acetate, propylene glycol mono tert-butyl ether acetate and the like, and one or more of these can be used in combination. It is not limited. Among these organic solvents, cyclohexanone, diethylene glycol dimethyl ether, 1-ethoxy-2-propanol, ethyl lactate, propylene glycol monomethyl ether acetate and mixed solvents thereof are preferably used in the resist underlayer film material of the present invention.

  The blending amount of the organic solvent is preferably 200 to 10,000 parts, particularly preferably 300 to 5,000 parts with respect to 100 parts of the total base polymer.

Further, a surfactant can be added as the lower layer film material of the present invention.
Examples of the surfactant include, but are not limited to, polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene olein ether, and polyoxyethylene Polyoxyethylene alkyl allyl ethers such as octylphenol ether and polyoxyethylene nonylphenol, polyoxyethylene polyoxypropylene block copolymers, sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monovalmitate, sorbitan monostearate, poly Oxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monovalmitate, polyoxyethylene sorbitan monostearate Nonionic surfactants of polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan trioleate and polyoxyethylene sorbitan tristearate, F-top EF301, EF303, EF352 (Tochem Products), MegaFuck F171, F172, F173 ( Dainippon Ink & Chemicals), Florard FC-430, FC-431, FC-4430 (Sumitomo 3M), Asahi Guard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfy Fluorine surfactants such as Nord E1004, KH-10, KH-20, KH-30, KH-40 (Asahi Glass), organosiloxane polymers KP-341, X-70-092, X-7 -093 (Shin-Etsu Chemical), acrylic acid or methacrylic acid Polyflow No. 75, no. 95 (Kyoeisha Yushi Chemical Industry Co., Ltd.), etc., among which FC-430, FC-4430, Surflon S-381, Surfynol E1004, KH-20, KH-30 are preferred. These can be used alone or in combination of two or more.

  The underlayer film of the present invention can be cured by heating. The heating temperature is preferably from 150 ° C. to 450 ° C., more preferably from 180 ° C. to 400 ° C., and from 10 seconds to 300 seconds.

  The resist underlayer film material having the above-described configuration, that is, at least a polymer compound represented by the above general formula (1) having a quenching coefficient (k value) in the range of 0.10 to 0.38 at a wavelength of 193 nm, and a wavelength A resist underlayer film material blended with one or more compounds selected from the above general formulas (2) to (7) having an extinction coefficient (k value) at 193 nm in the range of 0.4 to 1.1 is coated on a substrate and baked. The polymer compound represented by the above general formula (1) having an extinction coefficient (k value) at a wavelength of 193 nm in the range of 0.10 to 0.38 is the upper layer side, and the extinction coefficient (k value) at the wavelength of 193 nm is ) Is in the range of 0.4 to 1.1, the substrate represented by the above general formulas (2) to (7) is oriented on the substrate side to obtain a substrate on which a resist underlayer film is formed. Such a substrate is excellent in etching resistance under substrate etching conditions and embedding characteristics on a stepped substrate, and is suitable for a multilayer resist process such as a silicon-containing two-layer resist process or a three-layer resist process using a silicon-containing intermediate layer. Can be used.

  The present invention is also a method for forming a pattern on a substrate by lithography, wherein at least one of the resist underlayer film materials is formed on the substrate, and the resist underlayer film is formed on the resist underlayer film. A resist upper layer film of the composition is formed to form a two-layer resist film, the pattern circuit region of the resist upper layer film is exposed, developed with a developer to form a resist pattern, and the resist upper layer on which the pattern is formed There is provided a pattern forming method characterized in that a resist underlayer film is etched using a film as a mask, and a substrate is etched using at least the resist underlayer film on which a pattern is formed as a mask to form a pattern on the substrate.

  In this case, the resist composition for forming the resist upper layer film contains a silicon-containing polymer, and etching of the resist lower layer film using the resist upper layer film as a mask is performed using an etching gas mainly composed of oxygen gas or hydrogen gas. It is preferable to carry out.

  Furthermore, the present invention is a method for forming a pattern on a substrate by lithography, wherein at least a resist underlayer film is formed on the substrate using any of the resist underlayer film materials, and silicon is formed on the resist underlayer film. A resist intermediate layer film is formed using a resist intermediate layer film material containing atoms, and a resist upper layer film of a resist composition is formed on the resist intermediate layer film to form a three-layer resist film, and the resist upper layer film After exposing the pattern circuit area, a resist pattern is formed by developing with a developer, the resist intermediate film layer is etched using the resist upper layer film on which the pattern is formed as a mask, and at least the resist intermediate layer on which the pattern is formed Etch the resist underlayer film layer using the film layer film as a mask, and then mask at least the resist underlayer film with the pattern formed A pattern forming method and forming a pattern on a substrate the substrate is etched in.

  In this case, the resist composition that forms the resist upper layer film contains a polymer that does not contain silicon atoms, and the etching of the resist lower layer film using the resist intermediate layer film as a mask is performed mainly using oxygen gas or hydrogen gas. It is preferable to use gas.

  Hereinafter, these pattern forming methods of the present invention will be described with reference to FIGS. FIG. 3 is an explanatory diagram of the two-layer resist processing process, and FIG. 4 is an explanatory diagram of the three-layer resist processing process.

As shown in FIGS. 3 and 4, the substrate 11 to be used for pattern formation may be composed of a layer to be processed 11 a and a base layer 11 b. The base layer 11b of the substrate 11 is not particularly limited, and may be Si, amorphous silicon (α-Si), p-Si, SiO ₂ , SiN, SiON, W, TiN, Al, etc. Different materials may be used. The layer to be processed _{11a, Si, SiO 2, SiON} , SiN, p-Si, α-Si, W, W-Si, Al, Cu, Al-Si , etc., and various low dielectric films and etching stopper film is used In general, it can be formed to a thickness of 50 to 10,000 nm, particularly 100 to 5,000 nm.

First, the two-layer resist processing process of FIG. 3 will be described.
As shown in FIG. 3A, a resist underlayer film 12 is formed on a substrate 11 using the resist underlayer film material of the present invention, and a resist upper layer film material of a resist composition is formed on the resist underlayer film 12. The resist upper layer film 13 is formed by using the two-layer resist film.

  The resist underlayer film 12 can be formed on the substrate 11 by a spin coat method or the like in the same manner as a normal resist film formation method. After the resist underlayer film 12 is formed by a spin coating method or the like, it is desirable to evaporate the organic solvent and perform baking to promote the crosslinking reaction in order to prevent mixing with the resist upper layer film 13. The baking temperature is preferably in the range of 80 to 500 ° C. and in the range of 10 to 300 seconds. Although the thickness of the resist underlayer film 12 is appropriately selected, it is preferably 100 to 20,000 nm, particularly 150 to 15,000 nm.

As the resist composition for forming the resist upper layer film 13, a known composition can be used. From the point of oxygen gas etching resistance, etc., using a silicon atom-containing polymer such as a polysilsesquioxane derivative or vinylsilane derivative as a base polymer, and a positive type containing an organic solvent, an acid generator, and a basic compound if necessary The resist composition is preferably used. In addition, as a silicon atom containing polymer, the well-known polymer used for this kind of resist composition can be used.
The thickness of the resist upper layer film 13 is not particularly limited, but is preferably 30 to 500 nm, particularly 50 to 400 nm.

  When forming the resist upper layer film 13 using the resist upper layer film material of the resist composition, a spin coat method or the like is preferably used as in the case of forming the resist lower layer film 12. Pre-baking is performed after the resist upper layer film 13 is formed by spin coating or the like, but it is preferably performed at 80 to 180 ° C. for 10 to 300 seconds.

  Then, after exposing the pattern circuit region of the resist upper layer film according to a conventional method (see FIG. 3B), post-exposure baking (PEB) and development are performed to obtain a resist pattern (see FIG. 3C). ). In FIG. 3B, reference numeral 13 'denotes an exposed portion.

  In addition, the exposure step can be performed by immersion exposure in which exposure is performed through a liquid. For example, an exposure wavelength of 193 nm using an ArF excimer laser and a numerical aperture (NA) of 1.0 or more are used. A liquid can be inserted between the lens-coated substrate and the lens, and the substrate can be exposed through the liquid. In addition, water etc. are mentioned as a liquid used for immersion exposure. If a pattern is formed on the substrate by immersion lithography under such conditions, finer processing becomes possible and a pattern with higher accuracy can be formed.

  For the development, a paddle method using an alkaline aqueous solution, a dip method, or the like is used, and in particular, a paddle method using a 2.38% by mass aqueous solution of tetramethylammonium hydroxide is preferably used, for example, at room temperature for 10 seconds to 300 seconds. Then, the substrate is rinsed with pure water and dried by spin drying or nitrogen blowing.

Next, as shown in FIG. 3D, the resist underlayer film 12 is formed by dry etching using an etching gas mainly composed of oxygen gas or hydrogen gas using the resist upper layer film 13 on which the resist pattern is formed as a mask. Etching is performed.
This etching can be performed by a conventional method. In the case of dry etching mainly using oxygen gas, in addition to oxygen gas, it is also possible to add inert gas such as He and Ar, and CO, CO ₂ , NH ₃ , SO ₂ , N ₂ and NO ₂ gas. is there. In particular, the latter gas is used for side wall protection for preventing undercut of the pattern side wall.

Next, as shown in FIG. 3E, the substrate 11 is etched using at least the resist underlayer film 12 on which the pattern is formed as a mask to form a pattern on the substrate 11.
Etching of the substrate 11 can also be performed by a conventional method. For example, if the substrate is SiO ₂ or SiN, etching mainly using a chlorofluorocarbon gas, if polysilicon (p-Si), Al, or W is chlorine, bromine Etching mainly using a system gas. The resist underlayer film of the present invention is characterized by excellent etching resistance when etching these substrates. At this time, if necessary, the resist upper layer film may be removed and then the substrate may be etched, or the resist upper layer film may be left as it is and the substrate may be etched.

Next, the three-layer resist processing process of FIG. 4 will be described.
As shown in FIG. 4A, a resist underlayer film 12 is formed on a substrate 11 using the resist underlayer film material of the present invention, and a resist intermediate layer film material containing silicon atoms on the resist underlayer film 12 Is used to form a resist intermediate layer film 14, and a resist upper layer film 13 is formed on the resist intermediate layer film 14 using a resist upper layer film material of a resist composition to form a three-layer resist film.

Thus, in the case of the three-layer resist processing process, the resist intermediate layer film 14 containing silicon atoms is interposed between the resist lower layer film 12 and the resist upper layer film 13. In this case, the material for forming the resist intermediate layer film 14 may be a material such as a silicone polymer based on polysilsesquioxane or tetraorthosilicate glass (TEOS). A film produced by spin coating of these materials or a SiO ₂ , SiN, or SiON film produced by CVD can be used.
The thickness of the resist intermediate layer film 14 is preferably 10 to 1,000 nm.
Moreover, it is preferable that the resist upper layer film material of a resist composition does not contain a silicon atom containing polymer. Those in which the resist upper layer film does not contain a silicon atom-containing polymer has an advantage that the resolution is excellent as compared with a film containing a silicon atom-containing polymer.
The other configuration is the same as that of the two-layer resist processing process of FIG.

  Thereafter, as in the case of the two-layer resist processing process of FIG. 3, after exposing the pattern circuit region of the resist upper layer film according to a conventional method (see FIG. 4B), post-exposure baking (PEB), development To obtain a resist pattern (see FIG. 4C). In FIG. 4B, reference numeral 13 'denotes an exposed portion.

  Similarly to the case of the two-layer resist processing process, the exposing step can be performed by immersion exposure through a liquid. For example, an exposure wavelength of 193 nm using an ArF excimer laser and a numerical aperture ( Using a lens having an NA) of 1.0 or more, a liquid can be inserted between the substrate coated with the resist material and the lens, and the substrate can be exposed through the liquid. In addition, water etc. are mentioned as a liquid used for immersion exposure. If a pattern is formed on the substrate by immersion lithography under such conditions, finer processing is possible even in a three-layer resist processing process, and a pattern with higher accuracy can be formed.

Next, as shown in FIG. 4D, the resist intermediate layer film 14 is formed by dry etching or the like using an etching gas mainly composed of chlorofluorocarbon gas using the resist upper layer film 13 on which the resist pattern is formed as a mask. Etch.
This etching can be performed by a conventional method. In the case of dry etching mainly using a chlorofluorocarbon gas, CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F _{10 and the} like can be generally used.

Thus, after the resist intermediate layer film 14 is etched, as shown in FIG. 4E, at least the pattern of the resist intermediate layer film 14 is used as a mask, and O ₂ (oxygen gas) or H ₂ ( The resist underlayer film 12 is etched by dry etching using an etching gas mainly composed of hydrogen gas. In this case, in addition to O ₂ and H ₂ gases, inert gases such as He and Ar, and CO, CO ₂ , NH ₃ , SO ₂ , N ₂ and NO ₂ gases can be added. In particular, the latter gas is used for side wall protection for preventing undercut of the pattern side wall.

Next, as shown in FIG. 4F, the substrate 11 is etched using at least the resist underlayer film 12 on which the pattern is formed as a mask to form a pattern on the substrate 11.
Etching of the substrate 11 can also be performed by a conventional method. For example, if the substrate is SiO ₂ or SiN, etching mainly using a fluorocarbon gas, polysilicon ( For p-Si), Al, and W, etching is mainly performed using a chlorine-based or bromine-based gas. The resist underlayer film of the present invention is characterized by excellent etching resistance when etching these substrates. At this time, if necessary, the resist intermediate layer film or the like may be removed and then the substrate may be etched, or the resist intermediate layer film or the like may be left as it is, and the substrate may be etched.

  EXAMPLES Hereinafter, although an Example, a comparative example, etc. are shown and this invention is demonstrated further more concretely, this invention is not limited by these description.

[Synthesis Example 1]
To a 1 L flask, 28.4 g of 4-acetoxystyrene, 73.6 g of 2,5-norbornadiene, and 80 g of 1,2-dichloroethane as a solvent were added. In a nitrogen atmosphere, 1 g of trifluoroboron was added as a polymerization initiator to the reaction vessel, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. The reaction solution was concentrated to 1/2 and precipitated in a mixed solution of 2.5 L of methanol and 0.2 L of water, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer. . This polymer was dissolved again in 0.5 L of methanol and 1.0 L of tetrahydrofuran, 70 g of triethylamine and 15 g of water were added, the acetyl group was deprotected, and neutralized with acetic acid. The reaction solution was concentrated and then dissolved in 0.5 L of acetone, and precipitation, filtration and drying were performed in the same manner as above to obtain a white polymer.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
4-hydroxystyrene: 2,5-norbornadiene = 0.2: 0.8
Mass average molecular weight (Mw) = 9500
Molecular weight distribution (Mw / Mn) = 1.61
This polymer is referred to as (Polymer 1).
The hydroxy group content of this polymer is 0.21 mol% / g.

[Synthesis Example 2]
To a 1 L flask, 28.4 g of 4-acetoxy-α-methylstyrene, 73.6 g of 2,5-norbornadiene, and 80 g of 1,2-dichloroethane as a solvent were added. In a nitrogen atmosphere, 1 g of trifluoroboron was added as a polymerization initiator to the reaction vessel, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. The reaction solution was concentrated to 1/2 and precipitated in a mixed solution of 2.5 L of methanol and 0.2 L of water, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer. . This polymer was dissolved again in 0.5 L of methanol and 1.0 L of tetrahydrofuran, 70 g of triethylamine and 15 g of water were added, the acetyl group was deprotected, and neutralized with acetic acid. The reaction solution was concentrated and then dissolved in 0.5 L of acetone, and precipitation, filtration and drying were performed in the same manner as above to obtain a white polymer.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
4-hydroxy-α-methylstyrene: 2,5-norbornadiene = 0.2: 0.8
Mass average molecular weight (Mw) = 8200
Molecular weight distribution (Mw / Mn) = 1.58
This polymer is referred to as (Polymer 2).
The hydroxy group content of this polymer is 0.20 mol% / g.

[Synthesis Example 3]
To a 1 L flask, 26.4 g of 4-acetoxystyrene, 48 g of tetracyclododecene, 46 g of 2,5-norbornadiene and 80 g of 1,2-dichloroethane as a solvent were added. In a nitrogen atmosphere, 1 g of trifluoroboron was added as a polymerization initiator to the reaction vessel, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. The reaction solution was concentrated to 1/2 and precipitated in a mixed solution of 2.5 L of methanol and 0.2 L of water, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer. .

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
4-hydroxystyrene: tetracyclododecene: 2,5-norbornadiene = 0.2: 0.3: 0.5
Mass average molecular weight (Mw) = 6300
Molecular weight distribution (Mw / Mn) = 1.55
This polymer is referred to as (Polymer 3).
The hydroxy group content of this polymer is 0.20 mol% / g.

[Synthesis Example 4]
To a 1 L flask, 28.4 g of 4-acetoxystyrene, 55.2 g of 2,5-norbornadiene, 30.4 g of acenaphthylene, and 80 g of 1,2-dichloroethane as a solvent were added. In a nitrogen atmosphere, 1 g of trifluoroboron was added as a polymerization initiator to the reaction vessel, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. The reaction solution was concentrated to 1/2 and precipitated in a mixed solution of 2.5 L of methanol and 0.2 L of water, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer. . This polymer was dissolved again in 0.5 L of methanol and 1.0 L of tetrahydrofuran, 70 g of triethylamine and 15 g of water were added, the acetyl group was deprotected, and neutralized with acetic acid. The reaction solution was concentrated and then dissolved in 0.5 L of acetone, and precipitation, filtration and drying were performed in the same manner as above to obtain a white polymer.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
4-hydroxystyrene: 2,5-norbornadiene: acenaphthylene = 0.2: 0.6: 0.2
Mass average molecular weight (Mw) = 4800
Molecular weight distribution (Mw / Mn) = 1.55
This polymer is referred to as (Polymer 4).
The hydroxy group content of this polymer is 0.19 mol% / g.

[Synthesis Example 5]
To a 1 L flask, 28.4 g of 4-acetoxyindene, 73.6 g of 2,5-norbornadiene, and 80 g of 1,2-dichloroethane as a solvent were added. In a nitrogen atmosphere, 1 g of trifluoroboron was added as a polymerization initiator to the reaction vessel, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. The reaction solution was concentrated to 1/2 and precipitated in a mixed solution of 2.5 L of methanol and 0.2 L of water, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer. . This polymer was dissolved again in 0.5 L of methanol and 1.0 L of tetrahydrofuran, 70 g of triethylamine and 15 g of water were added, the acetyl group was deprotected, and neutralized with acetic acid. The reaction solution was concentrated and then dissolved in 0.5 L of acetone, and precipitation, filtration and drying were performed in the same manner as above to obtain a white polymer.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
4-hydroxyindene: 2,5-norbornadiene = 0.2: 0.8
Mass average molecular weight (Mw) = 6500
Molecular weight distribution (Mw / Mn) = 1.61
This polymer is referred to as (Polymer 5).
The hydroxy group content of this polymer is 0.20 mol% / g.

[Synthesis Example 6]
To a 1 L flask, 74.2 g of 6-acetoxy-2-vinylnaphthalene, 59.8 g of 2,5-norbornadiene and 80 g of 1,2-dichloroethane as a solvent were added. In a nitrogen atmosphere, 1 g of trifluoroboron was added as a polymerization initiator to the reaction vessel, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. The reaction solution was concentrated to 1/2 and precipitated in a mixed solution of 2.5 L of methanol and 0.2 L of water, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer. . This polymer was dissolved again in 0.5 L of methanol and 1.0 L of tetrahydrofuran, 70 g of triethylamine and 15 g of water were added, the acetyl group was deprotected, and neutralized with acetic acid. The reaction solution was concentrated and then dissolved in 0.5 L of acetone, and precipitation, filtration and drying were performed in the same manner as above to obtain a white polymer.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
6-hydroxy-2-vinylnaphthalene: 2,5-norbornadiene = 0.35: 0.65
Mass average molecular weight (Mw) = 8600
Molecular weight distribution (Mw / Mn) = 1.58
This polymer is referred to as (Polymer 6).
The hydroxy group content of this polymer is 0.26 mol% / g.

[Synthesis Example 7]
In a 1 L flask, 125 g of the polymer 1 (4-hydroxystyrene-norbornadiene resin) obtained in Synthesis Example 1 and 300 g of epichlorohydrin were placed and dissolved, heated to 80 ° C., and 220 g of 20% sodium hydroxide was stirred for 3 hours. After dripping over 1 hour, the lower layer saline solution was separated, unreacted epiocthydrin was distilled off by heating at 150 ° C., and 300 g of MIBK (methyl isobutyl ketone) was added and dissolved. The lower aqueous layer was removed by repeating the water washing separation three times, dried and filtered, and MIBK was removed by heating at 150 ° C. to obtain a white solid.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
4-glycidyl ether styrene: 4-hydroxystyrene: 2,5-norbornadiene = 0.16: 0.04: 0.8
Mass average molecular weight (Mw) = 9700
Molecular weight distribution (Mw / Mn) = 1.61
This polymer is referred to as (Polymer 7).
The hydroxy group content of this polymer is 0.04 mol% / g.

[Synthesis Example 8]
In a 1 L flask, 125 g of the polymer 1 (4-hydroxystyrene-norbornadiene resin) obtained in Synthesis Example 1 was dissolved in 500 ml of tetrahydrofuran, a catalytic amount of methanesulfonic acid was added, and ethyl vinyl ether was stirred at 20 ° C. 20 g was added. After reacting for 1 hour, the mixture was neutralized with concentrated aqueous ammonia, and the neutralized reaction solution was added dropwise to 5 L of water to obtain a white solid. This was filtered, dissolved in 500 ml of acetone, added dropwise to 10 L of water, filtered and dried in vacuo to obtain a white solid.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
4-ethoxyethoxystyrene: 4-hydroxystyrene: 2,5-norbornadiene = 0.14: 0.06: 0.8
Mass average molecular weight (Mw) = 9700
Molecular weight distribution (Mw / Mn) = 1.61
This polymer is referred to as (Polymer 8).
The hydroxy group content of this polymer is 0.04 mol% / g.

[Synthesis Example 9]
To a 500 mL flask, 97.2 g of 4-acetoxystyrene, 61.6 g of 1-vinylnaphthalene, and 100 g of toluene as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 4.1 g of AIBN was added as a polymerization initiator, and the temperature was raised to 80 ° C. and reacted for 24 hours. This reaction solution was concentrated to 1/2, precipitated in a mixed solution of 300 mL of methanol and 50 mL of water, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer. This polymer was dissolved again in 0.5 L of methanol and 1.0 L of tetrahydrofuran, 70 g of triethylamine and 15 g of water were added, the acetyl group was deprotected, and neutralized with acetic acid. The reaction solution was concentrated and then dissolved in 0.5 L of acetone, and precipitation, filtration and drying were performed in the same manner as above to obtain a white polymer.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
4-hydroxystyrene: 1-vinylnaphthalene = 0.6: 0.4
Mass average molecular weight (Mw) = 4600
Molecular weight distribution (Mw / Mn) = 1.48
This polymer is referred to as (Polymer 9).
The hydroxy group content of this polymer is 0.45 mol% / g.

[Synthesis Example 10]
To a 300 ml flask, 180 g of 4,4 ′-(9H-fluorene-9-ylidene) bisphenol, 75 g of 37% formalin aqueous solution and 5 g of oxalic acid were added and stirred at 100 ° C. for 24 hours with stirring. After the reaction, it is dissolved in 500 ml of methyl isobutyl ketone, the catalyst and metal impurities are removed by washing with sufficient water, the solvent is removed under reduced pressure, the pressure is reduced to 150 ° C. and 2 mmHg, and moisture and unreacted monomers are removed to obtain 163 g of polymer 10. It was.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Polymerization composition ratio (molar ratio)
4,4 ′-(9H-Fluorene-9-ylidene) bisphenol = 1.0
Mass average molecular weight (Mw) = 6100
Molecular weight distribution (Mw / Mn) = 4.90
This polymer compound is referred to as (Polymer 10).
The hydroxy group content of this polymer is 0.55 mol% / g.

[Synthesis Example 11]
94 g of phenol and 0.01 g of trifluoromethanesulfonic acid were added to a 300 mL flask, and 40 g of dicyclopentadiene was added dropwise for 1 hour while stirring at 50 ° C. After stirring at the same temperature for 1 hour, the temperature was raised to 150 ° C. and stirred for 2 hours to complete the reaction. Unreacted substances were removed by distillation under reduced pressure, dissolved in 200 g of 1,2-dichloroethane, the catalyst and metal impurities were removed by washing with water, and 1,2-dichloroethane was removed under reduced pressure to obtain a white polymer.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
Phenol: dicyclopentadiene = 0.6: 0.4
Mass average molecular weight (Mw) = 8300
Molecular weight distribution (Mw / Mn) = 1.58
This polymer is referred to as (Polymer 11).
The hydroxy group content of this polymer is 0.54 mol% / g.

[Comparative Synthesis Example 1]
To a 1 L flask, 70.4 g of 4-acetoxystyrene, 37.2 g of 2,5-norbornadiene, and 80 g of 1,2-dichloroethane as a solvent were added. In a nitrogen atmosphere, 1 g of trifluoroboron was added as a polymerization initiator to the reaction vessel, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. The reaction solution was concentrated to 1/2 and precipitated in a mixed solution of 2.5 L of methanol and 0.2 L of water, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer. . This polymer was dissolved again in 0.5 L of methanol and 1.0 L of tetrahydrofuran, 70 g of triethylamine and 15 g of water were added, the acetyl group was deprotected, and neutralized with acetic acid. The reaction solution was concentrated and then dissolved in 0.5 L of acetone, and precipitation, filtration and drying were performed in the same manner as above to obtain a white polymer.

When the obtained polymer was subjected to ¹³ C-NMR, ¹ H-NMR, and GPC measurement, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
4-hydroxystyrene: 2,5-norbornadiene = 0.4: 0.6
Mass average molecular weight (Mw) = 10600
Molecular weight distribution (Mw / Mn) = 1.86
This polymer is referred to as (Comparative Polymer 1).
The hydroxy group content of this polymer is 0.38 mol% / g.

  In addition, the structural formulas of blend phenol low-nuclei 1 to 4 and phenol fullerene and the respective hydroxy contents are shown below.

  Moreover, the acid generator, the crosslinking agent, and the organic solvent which were used in a present Example, the comparative example, etc. are shown below.

  Acid generator: AG1 (see structural formula below)

  Cross-linking agent: CR1 (see structural formula below)

Organic solvent: CyH (cyclohexanone)
PGMEA (propylene glycol-1-monomethyl ether-2-acetate)

  Polymers 1 to 11 and Comparative polymer 1 prepared above were each dissolved in an organic solvent in the proportions shown in Table 1, and the solution was applied on a silicon substrate and baked at 120 ° C. for 60 seconds, each having a thickness of 100 nm. Forming a film; A. The refractive index (n value, k value) at a wavelength of 193 nm and the contact angle at a water droplet of 5 μL were determined by a spectroscopic ellipsometer (VASE) with variable incident angle from Woollam, and the results are shown in Table 1.

  As a result of Table 1, the polymers 1 to 8 have a low k value, a low hydroxy group ratio and a high contact angle with water, and therefore a component (upper layer alignment component) that is oriented in the upper layer (upper layer side), polymers 9 to 11, Phenol low nuclei 1-4, phenol fullerene, comparative polymer 1 is a component (lower layer alignment component) that is oriented to the lower layer (substrate side) because the k value is high and the ratio of hydroxy groups is high and the contact angle with water is low. I know that there is.

  Next, as an example, polymers 1 to 8 which are upper layer alignment components, polymers 9 to 11 which are lower layer alignment components, phenol low nuclei 1 to 4, phenol fullerenes are blended in the proportions shown in Table 2, and organic solvents. In some cases, a cross-linking agent and an acid generator were added, applied to a silicon substrate, and a lower layer film having a thickness of 200 nm was formed by baking at 100 ° C. for 60 seconds and then at 180 ° C. for 60 seconds. J. et al. A. The thickness of each of the upper layer composed of the upper layer alignment component and the lower layer composed of the lower layer alignment component and the thickness of the mixing layer mixed with each other were determined by a spectroscopic ellipsometer (VASE) with variable incident angle from Woollam (Example) 1-17). Moreover, as a comparative example, it is a polymer 1-6 single component (Comparative Examples 1-6) in the ratio shown in Table 3, the polymer 9 which is a lower layer orientation component, the phenol low nucleus 1, and the lower layer orientation component. A blend of Comparative Polymer 1 (Comparative Examples 7 and 8) and a blend of Polymer 1 and Polymer 2 (Comparative Example 9), both of which are upper layer orientation components, were prepared in the same manner as in Example, and applied to a silicon substrate. The thicknesses of the upper layer, the lower layer, and the mixing layer made of each of the baked and blended compounds were determined. These results are shown in Tables 2 and 3.

  From Table 2 and Table 3, in Examples 1-17, the lower layer separation with the upper layer was confirmed, and the mixing layer was few. On the other hand, in Comparative Examples 7 and 8, it can be seen that a layer in which the compound blended in most of the films is mixed is formed.

  Next, a lower layer film material having the above composition (Examples 1 to 17 and Comparative Examples 1 to 9) was formed on a 1: 1 hole pattern with a hole diameter of 180 nm formed in a 300 nm thick thermal oxide film formed on a silicon substrate. Was baked at 100 ° C. for 60 seconds, and then baked at 180 ° C. for 60 seconds to form a resist underlayer film having a thickness of 200 nm. The obtained wafer was cleaved, and the embedded state of the hole pattern with the lower layer film was observed. The observed points are whether the bottom of the hole is buried and whether the upper side of the hole is flattened. The results are shown in Table 4.

  From Table 4, it can be seen that the underlayer film formed using the resist underlayer film material (Examples 1 to 17) of the present invention has excellent embedding characteristics and the hole upper portion is sufficiently flattened. On the other hand, it can be seen that the lower layer films formed by using the resist lower layer film materials of Comparative Examples 1 to 6 and 9 are insufficiently filled in the hole bottom and insufficiently flattened at the upper part of the hole. In addition, when the resist underlayer film materials of Comparative Examples 7 and 8 were used, the degree of embedding and planarization was good, but as shown in Table 3, the thickness of the mixing layer was increased. It is not preferable.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

It is a graph which shows the relationship of a board | substrate reflectance when changing the n value and the k value by fixing the film thickness of the lower layer film in a three-layer resist process to 200 nm. The film thickness of the lower layer film 1 in the three-layer resist process is 50 nm (a), 100 nm (b), and 150 nm (c), respectively, and the n value is 1.4 and the k value is 0. 6 is a graph showing the relationship of the substrate reflectivity when the lower layer film 2 is formed and the n value and k value of the lower layer film 1 are changed. It is explanatory drawing of an example of a 2 layer resist processing process. It is explanatory drawing of an example of a 3 layer resist processing process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Board | substrate, 11a ... Processed layer, 11b ... Base layer, 12 ... Resist underlayer film,
13: resist upper layer film, 13 ': exposed portion, 14 ... resist intermediate layer film.

Claims (9)

A resist underlayer film material of a multilayer resist film used in lithography, wherein at least a mass average molecular weight represented by the following general formula (1) is in the range of 1,000 to 100,000, and an extinction coefficient (imaginary refractive index) at a wavelength of 193 nm. A high-molecular compound having a numerical value (k value) of 0.10 to 0.38 and an extinction coefficient (imaginary value of refractive index; k value) at a wavelength of 193 nm selected from the following general formulas (2) to (7) are 0. A resist underlayer film material obtained by blending one or more compounds in the range of 4 to 1.1.

(Wherein R ¹ and R ⁵ are independently a hydrogen atom or methyl group, R ² and R ³ are hydrogen atoms or R ² and R ³ may be bonded to each other to form a methylene group, R ⁴ , R ⁶ is independently a hydrogen atom, a glycidyl group, or an acid labile group, m and n are positive numbers from 1 to 4, a1, a2 and b are positive numbers, and 0 ≦ a1 / ( a1 + a2 + b) ≦ 0.3, 0 ≦ a2 / (a1 + a2 + b) ≦ 0.5, 0 <(a1 + a2) / (a1 + a2 + b) ≦ 0.5, 0.3 ≦ b / (a1 + a2 + b) <1.0. .)

(Wherein R ⁷ is a hydrogen atom or a methyl group, R ⁸ is independently a single bond, a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms, an alkenylene group having 6 to 30 carbon atoms, carbon Any one of an arylene group of 6 to 30 and a hydrocarbon group containing an aromatic skeleton of 8 to 30 carbon atoms, which may have a condensed polycyclic hydrocarbon group, and in the hydrocarbon group, R ¹⁰ is independently a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms. The alkyl group may be substituted with an aryl group, R ⁹ and R ¹¹ are each independently a single bond or an alkylene group having 1 to 8 carbon atoms, q is a positive number of 1 to 4, and c Is 0.3 ≦ c ≦ 1.0, d is 0.4 ≦ d ≦ 1.0, and e is 0.4. e ≦ 1.0, in the range of ^{.R 12} is an alkyl group having 1 to 4 hydrogen atoms or carbon ^{atoms, R 13, R 14, R} 15, R 16, R 17 is independently C 6 -C 16 (In the arylene group or the arenetriyl group, f, g, h, i, and j are each 1 or 2.)   The polymer compound represented by the general formula (1) having an extinction coefficient (k value) in the range of 0.10 to 0.38 at the wavelength of 193 nm has a hydroxy group of 0 mol% / g or more and 0.29 mol%. / G or less, and the compound represented by the general formulas (2) to (7) having an extinction coefficient (k value) in the range of 0.4 to 1.1 at the wavelength of 193 nm has a hydroxy group of 0.29 mol. The resist underlayer film material according to claim 1, wherein the resist underlayer film material is at least% / g.   The resist underlayer film material according to claim 1 or 2, wherein the resist underlayer film material further contains any one or more of an organic solvent, an acid generator, and a crosslinking agent.   A substrate on which a resist underlayer film used in lithography is formed, and at least a polymer compound represented by the above general formula (1) having an extinction coefficient (k value) at a wavelength of 193 nm in the range of 0.10 to 0.38 And an extinction coefficient (k value) at a wavelength of 193 nm blended with one or more compounds represented by the general formulas (2) to (7) in the range of 0.4 to 1.1. The general formula (1) in which the extinction coefficient (k value) at the wavelength of 193 nm is in the range of 0.10 to 0.38 by applying and baking the resist underlayer film material according to any one of the above on a substrate. The polymer compound represented by formula (2) to (7) with the extinction coefficient (k value) in the range of 0.4 to 1.1 at the wavelength of 193 nm is oriented on the substrate side And resist Substrate, characterized in that the layer film is formed.   A method of forming a pattern on a substrate by lithography, wherein at least a resist underlayer film is formed on the substrate using the resist underlayer film material according to any one of claims 1 to 3, and the resist underlayer A resist upper layer film of a resist composition is formed on the film to form a two-layer resist film, the pattern circuit region of the resist upper layer film is exposed, and then developed with a developer to form a resist pattern. A pattern forming method comprising: etching a resist lower layer film using the formed resist upper layer film as a mask; and etching the substrate using at least the resist lower layer film having a pattern as a mask to form a pattern on the substrate.   Etching of the resist underlayer film, wherein the resist composition for forming the resist upper layer film contains a silicon atom-containing polymer and is performed using the resist upper layer film as a mask, is performed using an etching gas mainly composed of oxygen gas or hydrogen gas. The pattern forming method according to claim 5.   A method of forming a pattern on a substrate by lithography, wherein at least a resist underlayer film is formed on the substrate using the resist underlayer film material according to any one of claims 1 to 3, and the resist underlayer A resist interlayer film material containing silicon atoms is formed on the film, and a resist interlayer film of a resist composition is formed on the resist interlayer film to form a three-layer resist film. Then, after exposing the pattern circuit region of the resist upper layer film, developing with a developing solution to form a resist pattern, etching the resist intermediate film layer using the resist upper layer film on which the pattern is formed as a mask, and at least the pattern is The resist underlayer film layer is etched using the formed resist intermediate film layer as a mask, and at least a pattern is formed in the resist underlayer Pattern forming method, characterized in that as a mask to form a pattern on the substrate by etching the substrate.   The resist composition for forming the resist upper layer film includes a polymer containing no silicon atom, and etching of the resist lower layer film using the resist intermediate layer film as a mask is performed using an etching gas mainly composed of oxygen gas or hydrogen gas. The pattern forming method according to claim 7, wherein the pattern forming method is performed.   In the method of forming a pattern on a substrate by lithography, the pattern is formed by immersion lithography using an ArF excimer laser with an exposure wavelength of 193 nm and a numerical aperture (NA) of 1.0 or more. The pattern formation method as described in any one of Claims 5-8.

Images