SG11201706660WA - Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin - Google Patents
Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resinInfo
- Publication number
- SG11201706660WA SG11201706660WA SG11201706660WA SG11201706660WA SG11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA
- Authority
- SG
- Singapore
- Prior art keywords
- lithography
- underlayer film
- resin
- forming
- compound
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/86—Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/02—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
- C07D405/04—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings directly linked by a ring-member-to-ring-member bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Plural Heterocyclic Compounds (AREA)
- Indole Compounds (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015050731 | 2015-03-13 | ||
PCT/JP2016/057438 WO2016147989A1 (fr) | 2015-03-13 | 2016-03-09 | Composé, résine, matériau pour la formation d'un film de sous-couche pour lithographie, composition pour la formation d'un film de sous-couche pour lithographie, film de sous-couche pour lithographie, procédé de formation d'un motif, et procédé de purification d'un composé ou d'une résine |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201706660WA true SG11201706660WA (en) | 2017-09-28 |
Family
ID=56918793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201706660WA SG11201706660WA (en) | 2015-03-13 | 2016-03-09 | Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin |
Country Status (9)
Country | Link |
---|---|
US (1) | US10577323B2 (fr) |
EP (1) | EP3269712A4 (fr) |
JP (1) | JP6028959B1 (fr) |
KR (1) | KR20170128287A (fr) |
CN (1) | CN107406383B (fr) |
IL (1) | IL254447A0 (fr) |
SG (1) | SG11201706660WA (fr) |
TW (1) | TWI694996B (fr) |
WO (1) | WO2016147989A1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102203366B1 (ko) | 2014-09-19 | 2021-01-15 | 닛산 가가쿠 가부시키가이샤 | 레지스트 패턴 피복용 도포액 |
JP2018091943A (ja) * | 2016-11-30 | 2018-06-14 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 平坦化膜形成組成物、これを用いた平坦化膜およびデバイスの製造方法 |
US20200002307A1 (en) * | 2017-02-28 | 2020-01-02 | Mitsubishi Gas Chemical Company, Inc. | Method for purifying compound or resin and method for producing composition |
CN110383173B (zh) * | 2017-03-10 | 2023-05-09 | Jsr株式会社 | 抗蚀剂下层膜形成用组合物、抗蚀剂下层膜及其形成方法和形成有图案的基板的制造方法 |
JP2018154600A (ja) * | 2017-03-21 | 2018-10-04 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物、パターン形成方法及び精製方法 |
KR102349937B1 (ko) * | 2017-03-27 | 2022-01-10 | 동우 화인켐 주식회사 | 하드마스크용 조성물 |
CN110832397B (zh) * | 2017-07-14 | 2023-12-15 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物、抗蚀剂下层膜、及抗蚀剂图案的形成方法 |
KR102389260B1 (ko) * | 2017-11-10 | 2022-04-20 | 동우 화인켐 주식회사 | 하드마스크용 조성물 |
KR102677284B1 (ko) * | 2017-11-16 | 2024-06-24 | 제이에스알 가부시끼가이샤 | 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법, 패터닝된 기판의 제조 방법 그리고 화합물 |
JP6981945B2 (ja) | 2018-09-13 | 2021-12-17 | 信越化学工業株式会社 | パターン形成方法 |
JP7161451B2 (ja) | 2019-07-05 | 2022-10-26 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、及びパターン形成方法 |
KR102456165B1 (ko) * | 2020-03-10 | 2022-10-17 | 삼성에스디아이 주식회사 | 하드마스크 조성물 및 패턴 형성 방법 |
JP2024116011A (ja) | 2023-02-15 | 2024-08-27 | 信越化学工業株式会社 | パターン形成方法 |
Family Cites Families (29)
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CA941222A (en) | 1970-03-16 | 1974-02-05 | Horizons Research Incorporated | Polyvinylcarbazole photographic systems |
LU76074A1 (fr) * | 1976-10-26 | 1978-05-16 | ||
CH645306A5 (de) * | 1980-04-16 | 1984-09-28 | Ciba Geigy Ag | Verfahren zur herstellung von konzentrierten loesungen von farbbildern. |
JPS6057340A (ja) | 1983-09-08 | 1985-04-03 | Fuji Photo Film Co Ltd | 焼出し性組成物 |
DE3923426A1 (de) * | 1989-07-15 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung von novolak-harzen mit geringem metallionengehalt |
DE3940478A1 (de) * | 1989-12-07 | 1991-06-13 | Bayer Ag | Bis-triarylmethanverbindungen |
JPH10152636A (ja) * | 1991-05-30 | 1998-06-09 | Ricoh Co Ltd | 磁性インク |
JP3774668B2 (ja) | 2001-02-07 | 2006-05-17 | 東京エレクトロン株式会社 | シリコン窒化膜形成装置の洗浄前処理方法 |
JP2003300922A (ja) * | 2002-04-08 | 2003-10-21 | Honshu Chem Ind Co Ltd | トリメチロール化トリフェノール類 |
JP3914493B2 (ja) | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
WO2004066377A1 (fr) | 2003-01-24 | 2004-08-05 | Tokyo Electron Limited | Procede de depot chimique en phase vapeur pour former un film de nitrure de silicium sur un substrat |
JP3981030B2 (ja) | 2003-03-07 | 2007-09-26 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
JP4388429B2 (ja) | 2004-02-04 | 2009-12-24 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
JP4659678B2 (ja) * | 2005-12-27 | 2011-03-30 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP4781280B2 (ja) | 2006-01-25 | 2011-09-28 | 信越化学工業株式会社 | 反射防止膜材料、基板、及びパターン形成方法 |
JP4638380B2 (ja) | 2006-01-27 | 2011-02-23 | 信越化学工業株式会社 | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
JP5141549B2 (ja) * | 2006-02-27 | 2013-02-13 | 三菱瓦斯化学株式会社 | 反射防止膜形成用組成物および反射防止膜 |
JP4847426B2 (ja) * | 2007-10-03 | 2011-12-28 | 信越化学工業株式会社 | レジスト下層膜材料およびこれを用いたパターン形成方法 |
WO2009072465A1 (fr) * | 2007-12-07 | 2009-06-11 | Mitsubishi Gas Chemical Company, Inc. | Composition pour former un film de base pour lithographie et procédé de formation de motif de résist multicouche |
CN102803324B (zh) * | 2009-06-19 | 2015-09-16 | 日产化学工业株式会社 | 咔唑酚醛清漆树脂 |
EP2479198B1 (fr) | 2009-09-15 | 2016-02-17 | Mitsubishi Gas Chemical Company, Inc. | Résine à base d'un hydrocarbure aromatique et composition destinée à former un film de sous-couche pour lithographie |
JP5979384B2 (ja) * | 2011-08-12 | 2016-08-24 | 三菱瓦斯化学株式会社 | リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法 |
EP3051350B1 (fr) * | 2011-08-12 | 2018-10-24 | Mitsubishi Gas Chemical Company, Inc. | Composé alcoolique et procédé de formation d'un composé alcoolique |
JP5958734B2 (ja) * | 2011-10-17 | 2016-08-02 | 三菱瓦斯化学株式会社 | 新規エポキシ化合物及びその製造方法 |
WO2015041208A1 (fr) * | 2013-09-19 | 2015-03-26 | 日産化学工業株式会社 | Composition pour la formation d'un film de sous-couche pour un film à auto-assemblage comprenant une structure polycyclique aliphatique |
JP6829936B2 (ja) * | 2013-11-29 | 2021-02-17 | 三菱瓦斯化学株式会社 | 化合物又は樹脂の精製方法 |
KR102352289B1 (ko) * | 2014-04-17 | 2022-01-19 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 이를 이용한 디스플레이 기판의 제조 방법 |
CN107924131B (zh) * | 2015-08-31 | 2020-12-25 | 三菱瓦斯化学株式会社 | 光刻用下层膜形成材料及其组合物用于形成光刻用下层膜的用途、以及抗蚀图案形成方法 |
US11143962B2 (en) * | 2015-08-31 | 2021-10-12 | Mitsubishi Gas Chemical Company, Inc. | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method |
-
2016
- 2016-03-09 JP JP2016542787A patent/JP6028959B1/ja active Active
- 2016-03-09 WO PCT/JP2016/057438 patent/WO2016147989A1/fr active Application Filing
- 2016-03-09 KR KR1020177025470A patent/KR20170128287A/ko not_active Application Discontinuation
- 2016-03-09 SG SG11201706660WA patent/SG11201706660WA/en unknown
- 2016-03-09 CN CN201680015557.XA patent/CN107406383B/zh not_active Expired - Fee Related
- 2016-03-09 US US15/557,747 patent/US10577323B2/en not_active Expired - Fee Related
- 2016-03-09 EP EP16764819.5A patent/EP3269712A4/fr not_active Withdrawn
- 2016-03-11 TW TW105107603A patent/TWI694996B/zh not_active IP Right Cessation
-
2017
- 2017-09-12 IL IL254447A patent/IL254447A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP3269712A1 (fr) | 2018-01-17 |
JP6028959B1 (ja) | 2016-11-24 |
EP3269712A4 (fr) | 2018-08-08 |
JPWO2016147989A1 (ja) | 2017-04-27 |
KR20170128287A (ko) | 2017-11-22 |
CN107406383B (zh) | 2021-01-26 |
IL254447A0 (en) | 2017-11-30 |
US20180065930A1 (en) | 2018-03-08 |
CN107406383A (zh) | 2017-11-28 |
US10577323B2 (en) | 2020-03-03 |
TWI694996B (zh) | 2020-06-01 |
TW201641496A (zh) | 2016-12-01 |
WO2016147989A1 (fr) | 2016-09-22 |
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