SG11201700887WA - Chemical-mechanical polishing composition comprising organic/inorganic composite particles - Google Patents

Chemical-mechanical polishing composition comprising organic/inorganic composite particles

Info

Publication number
SG11201700887WA
SG11201700887WA SG11201700887WA SG11201700887WA SG11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA SG 11201700887W A SG11201700887W A SG 11201700887WA
Authority
SG
Singapore
Prior art keywords
organic
chemical
mechanical polishing
composite particles
polishing composition
Prior art date
Application number
SG11201700887WA
Other languages
English (en)
Inventor
Yongqing Lan
Bastian Marten Noller
Liang Jiang
Daniel Kwo-Hung Shen
Reza Golzarian
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201700887WA publication Critical patent/SG11201700887WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201700887WA 2014-08-11 2015-07-24 Chemical-mechanical polishing composition comprising organic/inorganic composite particles SG11201700887WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462035533P 2014-08-11 2014-08-11
PCT/IB2015/055608 WO2016024177A1 (en) 2014-08-11 2015-07-24 Chemical-mechanical polishing composition comprising organic/inorganic composite particles

Publications (1)

Publication Number Publication Date
SG11201700887WA true SG11201700887WA (en) 2017-03-30

Family

ID=55303915

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201700887WA SG11201700887WA (en) 2014-08-11 2015-07-24 Chemical-mechanical polishing composition comprising organic/inorganic composite particles

Country Status (8)

Country Link
US (1) US10214663B2 (de)
EP (1) EP3180406A4 (de)
JP (1) JP6804435B2 (de)
KR (1) KR102485534B1 (de)
CN (1) CN106795420A (de)
SG (1) SG11201700887WA (de)
TW (1) TWI675098B (de)
WO (1) WO2016024177A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10128146B2 (en) * 2015-08-20 2018-11-13 Globalwafers Co., Ltd. Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures
US11339309B2 (en) * 2016-12-22 2022-05-24 Mitsui Mining & Smelting Co., Ltd. Polishing liquid and polishing method
FR3062122B1 (fr) * 2017-01-25 2019-04-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Particules inorganiques conductrices de protons fluorees et utilisation de ces particules dans des membranes conductrices de protons
FR3062075B1 (fr) * 2017-01-25 2021-09-10 Commissariat Energie Atomique Particules inorganiques conductrices de protons, procede de preparation de celles-ci et utilisation de celles-ci pour constituer une membrane de pile a combustible
KR102343435B1 (ko) * 2018-08-08 2021-12-24 삼성에스디아이 주식회사 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
CN110577823B (zh) * 2018-08-20 2021-10-12 蓝思科技（长沙）有限公司 纳米磨料、抛光液及制备方法和应用
TWI745704B (zh) * 2019-06-21 2021-11-11 國立陽明交通大學 氧化鎳晶片、其製備方法及用途
CN113549424B (zh) * 2021-08-04 2022-05-13 白鸽磨料磨具有限公司 一种抛光用氧化铈团簇粉及其制备方法
CN114456716B (zh) * 2022-01-14 2022-10-25 华东理工大学 一种抛光蓝宝石用氧化铝抛光液及其制备方法

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
JP4075247B2 (ja) 1999-09-30 2008-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体
EP1295682B1 (de) * 2000-05-31 2007-10-24 JSR Corporation Schleifmaterial
EP1211024A3 (de) * 2000-11-30 2004-01-02 JSR Corporation Polierverfahren
JP4187497B2 (ja) 2002-01-25 2008-11-26 Ｊｓｒ株式会社 半導体基板の化学機械研磨方法
US20040162011A1 (en) 2002-08-02 2004-08-19 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US6939211B2 (en) * 2003-10-09 2005-09-06 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US20060205219A1 (en) * 2005-03-08 2006-09-14 Baker Arthur R Iii Compositions and methods for chemical mechanical polishing interlevel dielectric layers
US20070049180A1 (en) 2005-08-24 2007-03-01 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices
JP5312345B2 (ja) * 2006-12-29 2013-10-09 エルジー・ケム・リミテッド 金属配線形成用ｃｍｐスラリー組成物
JP2008288509A (ja) * 2007-05-21 2008-11-27 Fujifilm Corp 金属用研磨液
JP5327427B2 (ja) 2007-06-19 2013-10-30 Ｊｓｒ株式会社 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法
US9202709B2 (en) * 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
CN102113096A (zh) * 2008-08-06 2011-06-29 日立化成工业株式会社 化学机械研磨用研磨液以及使用了该研磨液的基板的研磨方法
CN102165564B (zh) 2008-09-26 2014-10-01 罗地亚管理公司 用于化学机械抛光的磨料组合物及其使用方法
KR20140014366A (ko) * 2009-04-15 2014-02-06 바스프 에스이 수성 복합-입자 분산액의 제조 방법
EP2427523B1 (de) * 2009-05-06 2015-10-28 Basf Se Wässriges metallpoliermittel mit einem polymeren schleifkorn mit anhängigen funktionellen gruppen und seine verwendung in einem cmp-verfahren
EP2539416A4 (de) * 2010-02-24 2017-11-29 Basf Se Schleifartikel, verfahren zu ihrer herstellung und verfahren zu ihrer verwendung
CN101870851B (zh) * 2010-06-02 2013-01-30 浙江工业大学 化学机械抛光液和抛光方法
JP6096670B2 (ja) * 2010-12-10 2017-03-15 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 酸化ケイ素誘電体膜およびポリシリコン膜を含有する基板を化学的機械的に研磨するための水性研磨組成物および方法
US20130186850A1 (en) * 2012-01-24 2013-07-25 Applied Materials, Inc. Slurry for cobalt applications
US9982166B2 (en) * 2013-12-20 2018-05-29 Cabot Corporation Metal oxide-polymer composite particles for chemical mechanical planarization

Also Published As

Publication number Publication date
EP3180406A1 (de) 2017-06-21
US10214663B2 (en) 2019-02-26
TW201610128A (zh) 2016-03-16
CN106795420A (zh) 2017-05-31
KR20170041888A (ko) 2017-04-17
WO2016024177A1 (en) 2016-02-18
TWI675098B (zh) 2019-10-21
JP2017530215A (ja) 2017-10-12
JP6804435B2 (ja) 2020-12-23
EP3180406A4 (de) 2018-04-11
KR102485534B1 (ko) 2023-01-06
US20170226381A1 (en) 2017-08-10

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