SG11201609653SA - Process for producing organic-inorganic laminates - Google Patents

Process for producing organic-inorganic laminates

Info

Publication number
SG11201609653SA
SG11201609653SA SG11201609653SA SG11201609653SA SG11201609653SA SG 11201609653S A SG11201609653S A SG 11201609653SA SG 11201609653S A SG11201609653S A SG 11201609653SA SG 11201609653S A SG11201609653S A SG 11201609653SA SG 11201609653S A SG11201609653S A SG 11201609653SA
Authority
SG
Singapore
Prior art keywords
producing organic
inorganic laminates
laminates
inorganic
organic
Prior art date
Application number
SG11201609653SA
Other languages
English (en)
Inventor
Maraike Ahlf
Felix Eickemeyer
Stephan Klotz
Original Assignee
Basf Coatings Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Coatings Gmbh filed Critical Basf Coatings Gmbh
Publication of SG11201609653SA publication Critical patent/SG11201609653SA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45527Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45529Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • C23C16/545Apparatus specially adapted for continuous coating for coating elongated substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2252/00Sheets
    • B05D2252/02Sheets of indefinite length

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
SG11201609653SA 2014-06-13 2015-05-07 Process for producing organic-inorganic laminates SG11201609653SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14172353 2014-06-13
PCT/EP2015/060049 WO2015188990A2 (en) 2014-06-13 2015-05-07 Process for producing organic-inorganic laminates

Publications (1)

Publication Number Publication Date
SG11201609653SA true SG11201609653SA (en) 2016-12-29

Family

ID=51059264

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201609653SA SG11201609653SA (en) 2014-06-13 2015-05-07 Process for producing organic-inorganic laminates

Country Status (12)

Country Link
US (1) US11639549B2 (pt)
EP (1) EP3155142B1 (pt)
JP (1) JP6688288B2 (pt)
KR (1) KR102459808B1 (pt)
CN (1) CN106460171B (pt)
BR (1) BR112016028242B1 (pt)
CA (1) CA2949398C (pt)
MX (1) MX2016016452A (pt)
RU (1) RU2694031C2 (pt)
SG (1) SG11201609653SA (pt)
TW (1) TWI711715B (pt)
WO (1) WO2015188990A2 (pt)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10988844B2 (en) 2015-01-20 2021-04-27 Basf Coatings Gmbh Process for producing flexible organic-inorganic laminates
MX2017012134A (es) 2015-03-25 2018-02-09 Basf Coatings Gmbh Procedimiento para la produccion de laminados organicos e inorganicos flexibles.
CN110433329B (zh) * 2019-08-28 2022-03-01 珠海乔丹科技股份有限公司 一种高强度、低弹性模量、无毒性钛铌锆合金牙科种植体
KR20240004863A (ko) 2021-05-06 2024-01-11 바스프 코팅스 게엠베하 다층 배리어 필름, 그의 제조 및 광기전 적용 분야에서의 용도
JP2023003828A (ja) * 2021-06-24 2023-01-17 東京エレクトロン株式会社 成膜装置及び成膜方法

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* Cited by examiner, † Cited by third party
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US20030203210A1 (en) * 2002-04-30 2003-10-30 Vitex Systems, Inc. Barrier coatings and methods of making same
US20050214556A1 (en) * 2004-02-20 2005-09-29 Fuji Photo Film Co., Ltd Organic-inorganic composite composition, plastic substrate, gas barrier laminate film, and image display device
KR100600051B1 (ko) * 2005-02-22 2006-07-13 주식회사 하이닉스반도체 원자층 증착 장비 및 그를 이용한 3원계 박막 형성 방법
WO2008083304A2 (en) * 2006-12-29 2008-07-10 3M Innovative Properties Company Method of making inorganic or inorganic/organic hybrid films
US8101288B2 (en) * 2007-06-11 2012-01-24 Fujifilm Corporation Gas barrier film and organic device using the same
US9660205B2 (en) * 2007-06-22 2017-05-23 Regents Of The University Of Colorado Protective coatings for organic electronic devices made using atomic layer deposition and molecular layer deposition techniques
US7858144B2 (en) * 2007-09-26 2010-12-28 Eastman Kodak Company Process for depositing organic materials
US8133555B2 (en) * 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
KR20110027487A (ko) * 2009-09-10 2011-03-16 삼성전자주식회사 금속 패턴 형성용 조성물 및 이를 이용한 금속 패턴 형성방법
US20110076421A1 (en) * 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface
EP2360293A1 (en) * 2010-02-11 2011-08-24 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
EP2441860A1 (en) 2010-10-13 2012-04-18 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition on a surface
EP2481832A1 (en) * 2011-01-31 2012-08-01 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus for atomic layer deposition
US20140106151A1 (en) * 2011-06-27 2014-04-17 Konica Minolta , Inc. Gas barrier film, manufacturing method for gas barrier film, and electronic device
CN103732393B (zh) * 2011-07-28 2016-10-05 凸版印刷株式会社 层叠体、阻气膜、层叠体的制造方法及层叠体制造装置
EP2557198A1 (en) * 2011-08-10 2013-02-13 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
US20130337259A1 (en) * 2012-06-14 2013-12-19 E I Du Pont De Nemours And Company Gas permeation barrier material
JP5708602B2 (ja) * 2012-09-20 2015-04-30 株式会社デンソー 有機el表示装置及びその製造方法
CN104134756A (zh) * 2013-04-30 2014-11-05 成均馆大学校产学协力团 多层封装薄膜
SG11201508014WA (en) * 2013-05-02 2015-10-29 Tera Barrier Films Pte Ltd Encapsulation barrier stack comprising dendrimer encapsulated nanop articles
US9464353B2 (en) * 2013-11-21 2016-10-11 Wonik Ips Co., Ltd. Substrate processing apparatus
EP3155141B1 (en) * 2014-06-12 2021-04-21 BASF Coatings GmbH Process for producing flexible organic-inorganic laminates

Also Published As

Publication number Publication date
EP3155142A2 (en) 2017-04-19
RU2017100977A3 (pt) 2018-11-20
RU2694031C2 (ru) 2019-07-08
CA2949398C (en) 2022-07-19
TW201610200A (zh) 2016-03-16
TWI711715B (zh) 2020-12-01
JP6688288B2 (ja) 2020-04-28
KR102459808B1 (ko) 2022-10-28
MX2016016452A (es) 2017-05-08
CA2949398A1 (en) 2015-12-17
WO2015188990A2 (en) 2015-12-17
US11639549B2 (en) 2023-05-02
JP2017517639A (ja) 2017-06-29
BR112016028242B1 (pt) 2022-08-16
KR20170020766A (ko) 2017-02-24
US20170121817A1 (en) 2017-05-04
CN106460171B (zh) 2020-10-16
BR112016028242A2 (pt) 2017-08-22
RU2017100977A (ru) 2018-07-16
WO2015188990A3 (en) 2016-01-28
CN106460171A (zh) 2017-02-22
EP3155142B1 (en) 2021-04-21

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