SG11201607359XA - Polishing composition, polishing method, and method for producing substrate - Google Patents
Polishing composition, polishing method, and method for producing substrateInfo
- Publication number
- SG11201607359XA SG11201607359XA SG11201607359XA SG11201607359XA SG11201607359XA SG 11201607359X A SG11201607359X A SG 11201607359XA SG 11201607359X A SG11201607359X A SG 11201607359XA SG 11201607359X A SG11201607359X A SG 11201607359XA SG 11201607359X A SG11201607359X A SG 11201607359XA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- producing substrate
- polishing composition
- composition
- producing
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014057480 | 2014-03-20 | ||
PCT/JP2015/056789 WO2015141505A1 (ja) | 2014-03-20 | 2015-03-09 | 研磨用組成物、研磨方法および基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201607359XA true SG11201607359XA (en) | 2016-10-28 |
Family
ID=54144478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201607359XA SG11201607359XA (en) | 2014-03-20 | 2015-03-09 | Polishing composition, polishing method, and method for producing substrate |
Country Status (8)
Country | Link |
---|---|
US (1) | US10106704B2 (ja) |
EP (1) | EP3121239A4 (ja) |
JP (2) | JP6526626B2 (ja) |
KR (1) | KR102298256B1 (ja) |
CN (2) | CN106103640B (ja) |
SG (1) | SG11201607359XA (ja) |
TW (1) | TWI651402B (ja) |
WO (1) | WO2015141505A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105754488B (zh) * | 2016-02-22 | 2017-12-26 | 郑州宏基研磨科技有限公司 | 研磨抛光粉及其制备方法 |
JP6720791B2 (ja) * | 2016-09-13 | 2020-07-08 | Agc株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
WO2018179064A1 (ja) * | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | スラリ及び研磨方法 |
KR102571098B1 (ko) * | 2017-08-09 | 2023-08-24 | 가부시끼가이샤 레조낙 | 연마액 및 연마 방법 |
JP2019050307A (ja) * | 2017-09-11 | 2019-03-28 | 株式会社フジミインコーポレーテッド | 研磨方法、ならびに研磨用組成物およびその製造方法 |
US10428241B2 (en) | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
US20190211228A1 (en) * | 2018-01-09 | 2019-07-11 | Cabot Microelectronics Corporation | Tungsten bulk polishing method with improved topography |
KR20190106679A (ko) * | 2018-03-07 | 2019-09-18 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
JP7173879B2 (ja) * | 2018-03-26 | 2022-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨システム |
JP7414437B2 (ja) | 2019-09-13 | 2024-01-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
US11267987B2 (en) * | 2019-10-30 | 2022-03-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical polishing slurry composition and method of polishing metal layer |
JP2021080441A (ja) * | 2019-11-20 | 2021-05-27 | 株式会社フジミインコーポレーテッド | 研磨組成物、研磨方法および基板の製造方法 |
JP7409918B2 (ja) * | 2020-03-13 | 2024-01-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
KR102413115B1 (ko) * | 2020-08-24 | 2022-06-24 | 에스케이씨솔믹스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
KR20240062241A (ko) * | 2022-10-28 | 2024-05-09 | 솔브레인 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6143662A (en) | 1998-02-18 | 2000-11-07 | Rodel Holdings, Inc. | Chemical mechanical polishing composition and method of polishing a substrate |
US20030094593A1 (en) * | 2001-06-14 | 2003-05-22 | Hellring Stuart D. | Silica and a silica-based slurry |
US7279119B2 (en) * | 2001-06-14 | 2007-10-09 | Ppg Industries Ohio, Inc. | Silica and silica-based slurry |
SG155045A1 (en) | 2002-07-22 | 2009-09-30 | Seimi Chem Kk | Semiconductor polishing compound, process for its production and polishing method |
US6964600B2 (en) | 2003-11-21 | 2005-11-15 | Praxair Technology, Inc. | High selectivity colloidal silica slurry |
JP4286168B2 (ja) * | 2004-03-22 | 2009-06-24 | 花王株式会社 | ナノスクラッチを低減する方法 |
TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
US20070218811A1 (en) | 2004-09-27 | 2007-09-20 | Hitachi Chemical Co., Ltd. | Cmp polishing slurry and method of polishing substrate |
JP2007234784A (ja) | 2006-02-28 | 2007-09-13 | Fujimi Inc | 研磨用組成物 |
JP2007335847A (ja) * | 2006-05-17 | 2007-12-27 | Hitachi Chem Co Ltd | 窒化珪素膜用研磨剤および研磨方法 |
US7998866B2 (en) | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
US7678700B2 (en) | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
KR101349983B1 (ko) | 2006-09-13 | 2014-01-13 | 아사히 가라스 가부시키가이샤 | 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법 |
US8821750B2 (en) * | 2007-02-27 | 2014-09-02 | Hitachi Chemical Co., Ltd. | Metal polishing slurry and polishing method |
JP2010056127A (ja) * | 2008-08-26 | 2010-03-11 | Hitachi Chem Co Ltd | シリコン膜用cmpスラリー |
US20100001229A1 (en) | 2007-02-27 | 2010-01-07 | Hitachi Chemical Co., Ltd. | Cmp slurry for silicon film |
CN102105267B (zh) | 2008-06-18 | 2016-08-03 | 福吉米株式会社 | 抛光组合物及利用该抛光组合物的抛光方法 |
JP5467804B2 (ja) * | 2008-07-11 | 2014-04-09 | 富士フイルム株式会社 | 窒化ケイ素用研磨液及び研磨方法 |
KR20120134105A (ko) | 2010-02-01 | 2012-12-11 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 이를 이용한 화학 기계 연마 방법 |
JP5585220B2 (ja) * | 2010-02-05 | 2014-09-10 | 日立化成株式会社 | Cmp研磨液及びこのcmp研磨液を用いた研磨方法 |
JP5695367B2 (ja) | 2010-08-23 | 2015-04-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
KR102000304B1 (ko) * | 2011-06-14 | 2019-07-15 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
JP2013138053A (ja) | 2011-12-28 | 2013-07-11 | Fujimi Inc | 研磨用組成物 |
JP5957292B2 (ja) | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
JP2015053101A (ja) * | 2013-08-05 | 2015-03-19 | 三洋化成工業株式会社 | 電子材料用研磨材及び研磨液 |
KR101405334B1 (ko) | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | 연마 입자의 제조 방법 및 연마 슬러리의 제조 방법 |
KR101405333B1 (ko) | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | 연마 입자, 연마 슬러리 및 이를 이용한 반도체 소자의 제조 방법 |
-
2015
- 2015-03-09 JP JP2016508662A patent/JP6526626B2/ja active Active
- 2015-03-09 KR KR1020167025201A patent/KR102298256B1/ko active IP Right Grant
- 2015-03-09 CN CN201580015247.3A patent/CN106103640B/zh active Active
- 2015-03-09 US US15/126,513 patent/US10106704B2/en active Active
- 2015-03-09 WO PCT/JP2015/056789 patent/WO2015141505A1/ja active Application Filing
- 2015-03-09 CN CN201910485288.9A patent/CN110283572B/zh active Active
- 2015-03-09 SG SG11201607359XA patent/SG11201607359XA/en unknown
- 2015-03-09 EP EP15764933.6A patent/EP3121239A4/en not_active Withdrawn
- 2015-03-16 TW TW104108318A patent/TWI651402B/zh active
-
2019
- 2019-02-26 JP JP2019033232A patent/JP6762390B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
TWI651402B (zh) | 2019-02-21 |
CN110283572B (zh) | 2021-08-24 |
CN106103640B (zh) | 2020-03-03 |
JP6526626B2 (ja) | 2019-06-05 |
US20170081552A1 (en) | 2017-03-23 |
EP3121239A4 (en) | 2017-03-15 |
KR102298256B1 (ko) | 2021-09-07 |
EP3121239A1 (en) | 2017-01-25 |
TW201542786A (zh) | 2015-11-16 |
JP6762390B2 (ja) | 2020-09-30 |
US10106704B2 (en) | 2018-10-23 |
JPWO2015141505A1 (ja) | 2017-04-06 |
CN106103640A (zh) | 2016-11-09 |
KR20160135194A (ko) | 2016-11-25 |
JP2019116627A (ja) | 2019-07-18 |
CN110283572A (zh) | 2019-09-27 |
WO2015141505A1 (ja) | 2015-09-24 |
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