SG11201606361QA - Gas cooled substrate support for stabilized high temperature deposition - Google Patents

Gas cooled substrate support for stabilized high temperature deposition

Info

Publication number
SG11201606361QA
SG11201606361QA SG11201606361QA SG11201606361QA SG11201606361QA SG 11201606361Q A SG11201606361Q A SG 11201606361QA SG 11201606361Q A SG11201606361Q A SG 11201606361QA SG 11201606361Q A SG11201606361Q A SG 11201606361QA SG 11201606361Q A SG11201606361Q A SG 11201606361QA
Authority
SG
Singapore
Prior art keywords
high temperature
substrate support
gas cooled
temperature deposition
cooled substrate
Prior art date
Application number
SG11201606361QA
Other languages
English (en)
Inventor
Brian West
Michael S Cox
Jeonghoon Oh
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201606361QA publication Critical patent/SG11201606361QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Drying Of Semiconductors (AREA)
SG11201606361QA 2014-02-14 2015-01-13 Gas cooled substrate support for stabilized high temperature deposition SG11201606361QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461940215P 2014-02-14 2014-02-14
US201461943595P 2014-02-24 2014-02-24
PCT/US2015/011203 WO2015122979A1 (fr) 2014-02-14 2015-01-13 Support de substrat refroidi au gaz pour dépôt à haute température stabilisée

Publications (1)

Publication Number Publication Date
SG11201606361QA true SG11201606361QA (en) 2016-09-29

Family

ID=53797579

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606361QA SG11201606361QA (en) 2014-02-14 2015-01-13 Gas cooled substrate support for stabilized high temperature deposition

Country Status (9)

Country Link
US (2) US9790589B2 (fr)
EP (1) EP3105778B1 (fr)
JP (1) JP6484642B2 (fr)
KR (2) KR102299392B1 (fr)
CN (1) CN105993062B (fr)
IL (1) IL247032B (fr)
SG (1) SG11201606361QA (fr)
TW (1) TWI662596B (fr)
WO (1) WO2015122979A1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105993062B (zh) * 2014-02-14 2020-08-11 应用材料公司 用于稳定化高温沉积的气冷式基板支撑件
US10662529B2 (en) * 2016-01-05 2020-05-26 Applied Materials, Inc. Cooled gas feed block with baffle and nozzle for HDP-CVD
US9892956B1 (en) * 2016-10-12 2018-02-13 Lam Research Corporation Wafer positioning pedestal for semiconductor processing
JP6918554B2 (ja) 2017-04-06 2021-08-11 東京エレクトロン株式会社 可動体構造及び成膜装置
US11373890B2 (en) * 2018-12-17 2022-06-28 Applied Materials, Inc. Wireless in-situ real-time measurement of electrostatic chucking force in semiconductor wafer processing
CN113053715B (zh) * 2019-12-27 2023-03-31 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置及其工作方法
KR102424374B1 (ko) * 2020-06-17 2022-07-22 조중래 반도체 소자의 제조 방법 및 제조 장치
CN111850501B (zh) * 2020-07-20 2022-09-27 江苏集萃有机光电技术研究所有限公司 一种基片架结构及真空蒸镀装置
US11749542B2 (en) * 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US20220127723A1 (en) * 2020-10-23 2022-04-28 Applied Materials, Inc. High heat loss heater and electrostatic chuck for semiconductor processing
CN112663014A (zh) * 2021-01-05 2021-04-16 德润特数字影像科技（北京）有限公司 一种镀膜基板的均匀控温装置及方法
US11598006B2 (en) * 2021-01-08 2023-03-07 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
TW202232656A (zh) 2021-01-11 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 靜電卡盤、及形成靜電卡盤之方法
CN114959620A (zh) * 2021-02-26 2022-08-30 鑫天虹(厦门)科技有限公司 薄膜沉积设备及其晶圆承载盘
US20220298634A1 (en) * 2021-03-18 2022-09-22 Taiwan Semiconductor Manufacturing Company Limited Apparatus and method of manufacturing interconnect structures
KR20240023670A (ko) * 2021-07-02 2024-02-22 어플라이드 머티어리얼스, 인코포레이티드 고전력 rf 애플리케이션들을 위한 고온 서셉터
CN115305452B (zh) * 2022-07-06 2023-09-08 北京北方华创微电子装备有限公司 反应腔室
KR102627143B1 (ko) * 2023-07-20 2024-01-23 (주)효진이앤하이 플라즈마 반응기용 온도 조절 시스템

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190016A (en) * 1979-03-13 1980-02-26 The United States Of America As Represented By The United States Department Of Energy Cryogenic target formation using cold gas jets
JPH05163096A (ja) * 1991-12-11 1993-06-29 Applied Materials Japan Kk 半導体製造装置における冷凍機を用いた真空装置の電極の低温温度コントロールシステム
JPH09157846A (ja) * 1995-12-01 1997-06-17 Teisan Kk 温度調節装置
JP2951903B2 (ja) * 1997-01-09 1999-09-20 株式会社日立製作所 処理装置
JP3934246B2 (ja) * 1997-10-27 2007-06-20 大日本スクリーン製造株式会社 基板冷却装置および基板冷却方法
US6583638B2 (en) * 1999-01-26 2003-06-24 Trio-Tech International Temperature-controlled semiconductor wafer chuck system
US6811651B2 (en) * 2001-06-22 2004-11-02 Tokyo Electron Limited Gas temperature control for a plasma process
US20050028436A1 (en) * 2003-07-09 2005-02-10 Viking Industrial Products, Inc. Fluid mixing method and apparatus
US7429718B2 (en) * 2005-08-02 2008-09-30 Applied Materials, Inc. Heating and cooling of substrate support
US20070077763A1 (en) * 2005-09-30 2007-04-05 Molecular Imprints, Inc. Deposition technique to planarize a multi-layer structure
US8343280B2 (en) * 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US20080035306A1 (en) * 2006-08-08 2008-02-14 White John M Heating and cooling of substrate support
KR100746231B1 (ko) 2006-08-18 2007-08-03 삼성전자주식회사 보조 칠러를 갖는 냉각장치 및 이를 이용하는 반도체 소자제조방법
US20100243437A1 (en) 2009-03-25 2010-09-30 Alliance For Sustainable Energy, Llc Research-scale, cadmium telluride (cdte) device development platform
JP5195711B2 (ja) * 2009-10-13 2013-05-15 東京エレクトロン株式会社 基板冷却装置、基板冷却方法及び記憶媒体
KR101594229B1 (ko) * 2010-09-06 2016-02-15 가부시키가이샤 이엠디 플라스마 처리장치
CN105177519B (zh) * 2010-10-29 2018-03-27 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
WO2012077071A1 (fr) * 2010-12-08 2012-06-14 Oc Oerlikon Balzers Ag Appareil et procédé de dépôt d'une couche sur un substrat
TWI534341B (zh) * 2011-09-26 2016-05-21 Hitachi Int Electric Inc A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
CN105993062B (zh) * 2014-02-14 2020-08-11 应用材料公司 用于稳定化高温沉积的气冷式基板支撑件

Also Published As

Publication number Publication date
IL247032A0 (en) 2016-09-29
EP3105778A4 (fr) 2017-11-01
KR20210110416A (ko) 2021-09-07
IL247032B (en) 2022-07-01
KR20160120339A (ko) 2016-10-17
US9790589B2 (en) 2017-10-17
TWI662596B (zh) 2019-06-11
US10344375B2 (en) 2019-07-09
JP6484642B2 (ja) 2019-03-13
KR102397854B1 (ko) 2022-05-12
US20150232983A1 (en) 2015-08-20
JP2017512379A (ja) 2017-05-18
WO2015122979A1 (fr) 2015-08-20
US20180037987A1 (en) 2018-02-08
TW201532126A (zh) 2015-08-16
CN105993062B (zh) 2020-08-11
EP3105778B1 (fr) 2019-07-03
EP3105778A1 (fr) 2016-12-21
CN105993062A (zh) 2016-10-05
KR102299392B1 (ko) 2021-09-06

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