SG11201606347XA - Deposition apparatus - Google Patents

Deposition apparatus

Info

Publication number
SG11201606347XA
SG11201606347XA SG11201606347XA SG11201606347XA SG11201606347XA SG 11201606347X A SG11201606347X A SG 11201606347XA SG 11201606347X A SG11201606347X A SG 11201606347XA SG 11201606347X A SG11201606347X A SG 11201606347XA SG 11201606347X A SG11201606347X A SG 11201606347XA
Authority
SG
Singapore
Prior art keywords
deposition apparatus
deposition
Prior art date
Application number
SG11201606347XA
Other languages
English (en)
Inventor
Masahiro Atsumi
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of SG11201606347XA publication Critical patent/SG11201606347XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8408—Processes or apparatus specially adapted for manufacturing record carriers protecting the magnetic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H01J37/32064—Circuits specially adapted for controlling the arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32944—Arc detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
SG11201606347XA 2014-03-18 2014-11-14 Deposition apparatus SG11201606347XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014055570 2014-03-18
PCT/JP2014/005736 WO2015140858A1 (ja) 2014-03-18 2014-11-14 成膜装置

Publications (1)

Publication Number Publication Date
SG11201606347XA true SG11201606347XA (en) 2016-09-29

Family

ID=54143884

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606347XA SG11201606347XA (en) 2014-03-18 2014-11-14 Deposition apparatus

Country Status (7)

Country Link
US (3) US10676813B2 (zh)
JP (1) JP6126302B2 (zh)
KR (1) KR101862967B1 (zh)
CN (2) CN110158038B (zh)
SG (1) SG11201606347XA (zh)
TW (1) TWI593818B (zh)
WO (1) WO2015140858A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6126302B2 (ja) * 2014-03-18 2017-05-10 キヤノンアネルバ株式会社 成膜装置
JP6205441B2 (ja) * 2016-01-26 2017-09-27 株式会社神戸製鋼所 アーク蒸発装置
JP6350603B2 (ja) * 2016-07-07 2018-07-04 トヨタ自動車株式会社 アーク放電発生装置及び成膜方法
WO2019130471A1 (ja) * 2017-12-27 2019-07-04 キヤノンアネルバ株式会社 成膜方法および成膜装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517866A (ja) 1974-06-26 1976-01-22 Hitachi Ltd Sairisutakudohoshiki
JPH0517866A (ja) * 1991-07-11 1993-01-26 Nissin Electric Co Ltd アーク式蒸発源
GB9503305D0 (en) 1995-02-20 1995-04-12 Univ Nanyang Filtered cathodic arc source
JP3732250B2 (ja) 1995-03-30 2006-01-05 キヤノンアネルバ株式会社 インライン式成膜装置
DE19618073C1 (de) * 1996-05-06 1997-09-18 Inovap Vakuum Und Plasmatechni Zündeinrichtung für einen Vakuumbogenverdampfer
US5896012A (en) * 1997-08-08 1999-04-20 Kabushiki Kaisha Kobe Seiko Sho Metal ion plasma generator having magnetic field forming device located such that a triggering is between the magnetic field forming device and an anode
JPH11350115A (ja) * 1998-06-12 1999-12-21 Ulvac Corp 同軸型真空アーク蒸着源を用いた蒸着装置
JP2004162084A (ja) 2002-11-11 2004-06-10 Fujitsu Ltd 成膜方法および成膜装置
JP3823914B2 (ja) * 2002-11-20 2006-09-20 日新電機株式会社 真空アーク蒸着用の蒸発源装置及び真空アーク蒸着装置
CN2585870Y (zh) * 2002-12-24 2003-11-12 中国科学院物理研究所 采用电弧加热靶材蒸积制备大面积薄膜的装置
JP4269263B2 (ja) * 2003-07-01 2009-05-27 富士電機デバイステクノロジー株式会社 硬質カーボン膜の形成方法および装置
JP2005029855A (ja) * 2003-07-08 2005-02-03 Fuji Electric Device Technology Co Ltd 真空アーク蒸着装置、真空アーク蒸着法、および磁気記録媒体
JP4110175B2 (ja) * 2006-03-22 2008-07-02 株式会社神戸製鋼所 アークイオンプレーティング方法
JP2008050653A (ja) * 2006-08-24 2008-03-06 Shimadzu Corp 成膜装置、および成膜方法
JP5063143B2 (ja) * 2007-03-02 2012-10-31 株式会社リケン アーク式蒸発源
JP4633816B2 (ja) * 2008-03-31 2011-02-16 株式会社フェローテック ターゲット交換式プラズマ発生装置
JP5280459B2 (ja) 2008-12-25 2013-09-04 キヤノンアネルバ株式会社 スパッタリング装置
TWI379916B (en) * 2009-02-24 2012-12-21 Ind Tech Res Inst Vacuum coating device and coating method
JP4576476B1 (ja) * 2009-12-28 2010-11-10 株式会社フェローテック ストライカ式プラズマ発生装置及びプラズマ処理装置
CN101792895B (zh) * 2010-03-25 2012-07-25 中国科学院宁波材料技术与工程研究所 阴极真空电弧源薄膜沉积装置及沉积薄膜的方法
WO2013099059A1 (ja) * 2011-12-28 2013-07-04 キヤノンアネルバ株式会社 成膜装置
WO2013099058A1 (ja) * 2011-12-28 2013-07-04 キヤノンアネルバ株式会社 成膜装置
JP6126302B2 (ja) * 2014-03-18 2017-05-10 キヤノンアネルバ株式会社 成膜装置
JP6403269B2 (ja) * 2014-07-30 2018-10-10 株式会社神戸製鋼所 アーク蒸発源
WO2019130471A1 (ja) * 2017-12-27 2019-07-04 キヤノンアネルバ株式会社 成膜方法および成膜装置

Also Published As

Publication number Publication date
CN110158038B (zh) 2022-01-18
US20160326630A1 (en) 2016-11-10
CN110158038A (zh) 2019-08-23
US20200255933A1 (en) 2020-08-13
US11821067B2 (en) 2023-11-21
TW201536942A (zh) 2015-10-01
JP6126302B2 (ja) 2017-05-10
CN106029941B (zh) 2019-06-18
KR20160132969A (ko) 2016-11-21
US20240052477A1 (en) 2024-02-15
WO2015140858A1 (ja) 2015-09-24
TWI593818B (zh) 2017-08-01
US10676813B2 (en) 2020-06-09
CN106029941A (zh) 2016-10-12
JPWO2015140858A1 (ja) 2017-04-06
KR101862967B1 (ko) 2018-07-04

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