WO2019130471A1 - 成膜方法および成膜装置 - Google Patents
成膜方法および成膜装置 Download PDFInfo
- Publication number
- WO2019130471A1 WO2019130471A1 PCT/JP2017/046910 JP2017046910W WO2019130471A1 WO 2019130471 A1 WO2019130471 A1 WO 2019130471A1 JP 2017046910 W JP2017046910 W JP 2017046910W WO 2019130471 A1 WO2019130471 A1 WO 2019130471A1
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- WIPO (PCT)
- Prior art keywords
- target
- striker
- strike
- film
- arc discharge
- Prior art date
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
Definitions
- the present invention relates to a film forming method and a film forming apparatus.
- a film is formed by using a target as a cathode and causing arc discharge between the target and an anode disposed in the vicinity of the target.
- Arc discharge can be induced by bringing a striker connected to the anode part close to or in contact with the target.
- Patent Document 3 describes a film forming apparatus capable of continuously forming a film without scraping the target with a grinder or the like.
- Patent Document 3 in a configuration in which the striker is brought close to or in contact with the side surface around the rotation axis of the cylindrical target, the position at which the striker (the tip of the striker) on the side surface of the target is changed It is described that the target is rotated.
- the present invention has been made in light of the above-mentioned problem recognition, and an object thereof is to provide an advantageous technique for more effectively using a target.
- an advantageous technique is provided to use the target more effectively.
- FIG. 2 is a schematic view showing the configuration of a carrier in the processing apparatus shown in FIG. 1; Schematic which shows an example of a structure of the film-forming apparatus.
- FIG. 4 is an enlarged front view of a plasma generation unit of the film forming apparatus shown in FIG. 3;
- FIG. 4 is an enlarged bottom view of a plasma generation unit of the film forming apparatus shown in FIG. 3; It is an AA arrow line view of a source part shown in FIG. It is a BB arrow line view of the source part shown in FIG. FIG.
- FIG. 1 schematically shows the configuration of a vacuum processing apparatus VP according to an embodiment of the present invention.
- the vacuum processing apparatus VP can be configured as an in-line type film forming apparatus.
- the vacuum processing apparatus VP has a configuration in which a plurality of processing chambers 111 to 131 are connected in a rectangular endless shape via gate valves.
- the processing chambers 111 to 131 are vacuum containers evacuated by a dedicated or shared exhaust system.
- a transport device CNV see FIG. 3 for transporting the carrier 10 holding the substrate 1 is incorporated.
- the transport device CNV has a transport path that transports the carrier 10 in a posture in which the main surface of the substrate 1 held thereby is maintained perpendicular to the horizontal plane.
- the processing chamber 111 is a load lock chamber for performing processing of attaching the substrate 1 to the carrier 10.
- the processing chamber 116 is an unload lock chamber for performing processing of removing the substrate 1 from the carrier 10.
- the substrate 1 is, for example, one suitable for use as a magnetic recording medium, and may be, for example, a metal or glass disk-like member having an opening (inner circumferential hole) in the central portion.
- the shape and material of the substrate 1 are not limited to specific ones.
- a substrate processing procedure in the vacuum processing apparatus VP will be described.
- the first substrate 1 is attached to the first carrier 10 in the processing chamber (load lock chamber) 111.
- the first carrier 10 moves to the processing chamber (adhesion layer forming chamber) 117, and the adhesion layer is formed on the first substrate 1.
- the second substrate 1 is attached to the second carrier 10.
- the second carrier 10 moves to the processing chamber (adhesion layer forming chamber) 117, an adhesion layer is formed on the second substrate 1, and the third carrier 10 is transferred to the third carrier 10 in the processing chamber (load lock chamber) 111. 1 is attached.
- each carrier 10 performs processing on the substrate 1 while moving the processing chambers 117 to 131 one by one.
- the processing chambers 117 to 131 are processing chambers for processing the substrate 1.
- the processing chambers 117 to 128 may be, for example, processing chambers of a film forming apparatus for forming a film such as an adhesion layer, a soft magnetic layer, a seed layer, an intermediate layer, and a magnetic layer.
- the processing chamber 129 can be, for example, a processing chamber of a plasma processing apparatus that forms a surface protection layer made of a ta-C film.
- the processing chamber 130 may be, for example, a chamber of a processing apparatus that processes the surface of the ta-C film formed in the processing chamber 129.
- the processing chambers 112 to 115 are processing chambers provided with a direction changing device that changes the transport direction of the substrate 1 by 90 degrees.
- the transport device CNV includes a large number of driven rollers (not shown) aligned along the transport path, and a magnetic screw 303 for driving the carrier 10.
- the slider 202 (carrier 10) provided with the permanent magnet 204 is driven along the transport path.
- a voltage is applied to the substrate 1 held by the holder 201 of the carrier 10 by the power source 309 via the conductive elastic member 203.
- the substrate 1 held by the holder 201 can be grounded via the conductive elastic member 203.
- a direct current voltage, a pulse voltage or a high frequency voltage may be applied to the holder 201.
- the deposition apparatus 300 may be configured to form a ta-C film on the substrate 1 by, for example, vacuum arc deposition, but this is merely an example.
- the film forming apparatus 300 may generate plasma by another method.
- the film forming apparatus 300 can include a processing chamber 129 that processes a substrate, a plasma generation unit 306 that generates plasma, and a transport unit 304 that transports the plasma generated by the plasma generation unit 306 to the processing chamber 129.
- the film forming apparatus 300 also includes a scanning magnetic field generating unit SCL that generates a magnetic field that rotates the plasma so that the substrate 1 is scanned by plasma, and a vacuum pump (not shown) such as a turbo molecular pump that exhausts the processing chamber 129. And can be provided.
- the processing chamber 129 constitutes a film forming chamber for forming a ta-C film on the substrate 1.
- FIG. 3 shows only one set of the transport part 304 and the plasma generation part 306, one set of the transport part 304 and the plasma generation part 306 is provided on both sides of the processing chamber 129 (ie, the transport part 304 and the plasma generation part 306). May be provided).
- the transport portion 304 may be a two-dimensionally curved single bend type transport tube as schematically shown in FIG. 3, but is a linear, double bend, or three dimensionally curved transport tube. May be
- the filter coil FCL may include a magnetic field generation unit disposed on the inner side (vacuum side) of the transport unit 304.
- the filter coil FCL forms a magnetic field for transporting plasma (electrons and ions) in the transport section 304.
- a plurality of baffles may be disposed in the transport section 304.
- the plasma generation unit 306 generates plasma by vacuum arc discharge, but may generate plasma by other methods.
- the plasma generation unit 306 has an ion generation unit 310 and a target drive unit 312.
- the ion generation unit 310 may include a chamber 314, the inside of which is in communication with the transport unit 304, a target TG which is a cathode for generating electrons and ions, an anode electrode, and a striker 320.
- the ion generation unit 310 may include a target holder 318 for holding (mounting) the target TG, and a stabilization coil ACL.
- the striker 320 is a member for generating an arc discharge (ie, igniting the discharge) between the target TG and the anode 316.
- the target drive unit (modification mechanism) 312 can include a rotating unit 322 and a moving unit 324, as described later.
- the rotating unit 322 rotates or turns the target around the rotation axis RA, with the central axis of the cylindrical target being aligned with the rotation axis RA and supporting the target in the horizontal direction.
- the moving unit 324 moves (advances and retracts) the target along the rotation axis RA (the central axis of the target).
- the plasma containing carbon ions generated by the arc discharge is transported to the processing chamber 129 along the transport magnetic field in the transport section 304, and a ta-C film is formed on the substrate 1 disposed in the processing chamber 129.
- An inert gas such as argon and / or a reactive gas of nitrogen gas may be supplied to the plasma generation unit 306 as a process gas.
- the stabilization coil ACL is provided on the outside of the circular tubular member and is disposed on the outside (atmosphere side) of the chamber 314 opposite to the discharge surface side (transport part 304 side) of the target TG, and one end thereof is connected to the chamber 314 It is done.
- the inside of the tubular member provided with the stabilizing coil ACL is in communication with the chamber 314 and is maintained in vacuum.
- the chamber 314 is internally evacuable and accommodates the target TG and its surrounding components, ie, the target TG, the anode 316 and the striker 320.
- the anode 316 may have, for example, a cylindrical shape, but the shape of the anode 316 is not particularly limited as long as it does not interrupt the transport of electrons and carbon ions to the transport portion 304.
- the anode 316 may be made of a graphite material, but the material of the anode 316 may be a material that does not melt in the plasma generated by the arc discharge and has conductivity.
- the striker 320 is an electrode for inducing an arc discharge between the target TG and the anode 316.
- the striker 320 retracted to the outside of the anode 316 can be driven toward the target TG to electrically contact the target TG so that an arc current can flow from the striker 320 to the target TG.
- arc discharge can be generated.
- the arc discharge can be maintained by maintaining the electron current or ion current between the anode 316 and the target TG.
- the arc discharge emits carbon ions and electrons from the target TG to generate a plasma containing carbon ions and electrons.
- the striker 320 is electrically connected to the anode 316.
- the striker 320 has a discharge part 320 a (tip part), and the discharge part 320 a is electrically connected to the anode 316.
- Striker 320 can discharge portion 320a is disposed in the vicinity of the outer peripheral surface TG 0 of the target TG by being rotatably driven.
- the outer peripheral surface TG 0 of the target TG a side around the rotation axis RA of the target TG (about the axis of rotation).
- the state in which the discharge portion 320a is disposed near the outer peripheral surface TG 0 of the target TG is the state in which it is possible to induce an arc discharge between the outer peripheral surface TG 0 of the target TG and the discharge portion 320a.
- the striker 320, the discharge portion 320a are provided to be in contact with the outer peripheral surface TG 0 of the target TG by being rotatably driven. It the discharge portion 320a of the outer peripheral surface TG 0 and striker 320 of the target TG is a contact state, not to mean only that the discharge portion 320a of the striker 320 is in physical contact with the outer peripheral surface TG 0. It the discharge portion 320a of the outer peripheral surface TG 0 and striker 320 of the target TG is a contact state is also meant to discharging portion 320a of the striker 320 is in electrical contact in proximity to the outer peripheral surface TG 0. In other words, it the discharge portion 320a of the outer peripheral surface TG 0 and striker 320 of the target TG is a contact state, also means that the discharge portion 320a and the target TG striker 320 conducts a low resistance.
- Striker driving unit 326 as shown in FIG. 6, the state in which the discharge portion 320a of the striker 320 in the vicinity of the outer peripheral surface TG 0 of the target TG is disposed, and a state where the discharge portion 320a is separated from the outer peripheral surface TG 0
- the striker 320 can be rotationally driven.
- the striker driving unit 326 can include a striker motor 328, pulleys 330a and 330b, a belt 332, a motor base 334, and a magnetic seal 336.
- the striker 320 can be connected to the striker motor 328 via the pulleys 330 a, 330 b and the belt 332.
- the striker motor 328 is fixed to a motor base 334 provided in the chamber 314, and can rotate the striker 320 by a predetermined angle (for example, about 90 degrees). Since the striker motor 328 is provided on the atmosphere side, the striker driving unit 326 can transmit the rotational force from the atmosphere side to the vacuum side striker 320 via the magnetic seal 336. Further, in the present embodiment, in order to stably supply the current regardless of the rotation angle of the striker 320, power can be supplied via the rotary connector (rotational introducer) 338.
- the target TG may be held by the target holder 318.
- a target power supply terminal 340 may be provided on the atmosphere side so that current can be supplied to the target TG via the target holder 318.
- the target holder 318 can be fixed to one end of the shaft 342.
- the rotating portion 322 may be provided at the other end of the shaft 342.
- the moving unit 324 may be provided to move (advance and retract) the base plate 344 supporting the rotating unit 322.
- the shaft 342 may be a member that supports the target TG horizontally. Also, the shaft 342 may be part of a path for supplying current to the target TG.
- a channel for cooling water for cooling the target TG may be formed in the shaft 342.
- the target holder 318 is provided between the shaft 342 and the target TG, and may have functions of fixing the target TG, cooling the target TG, and a current path.
- the mounting base 360 may be a member fixed to the chamber 314.
- the base plate 344 can be fixed to the mounting base 360 via the LM guide 362.
- the LM guide 362 is provided to move the base plate 344 along the rotation axis RA of the rotation unit 322 (the central axis of the target TG).
- the LM guide 362 may be configured by a ball screw 366 and a nut 372. As shown in FIG. 7, a transfer motor 364 and a ball screw 366 can be fixed to the mounting base 360. More specifically, the ball screw 366 can be supported by the first plate 368a and the second plate 368b attached to the attachment base 360.
- the transfer motor 364 may be fixed to the second plate 368b and configured to rotate the ball screw 366 via the gears 370a and 370b. Also, the base plate 344 can be fixed to a nut 372 that moves (moves back and forth) in response to the rotation of the ball screw 366. Thus, the rotation of the transfer motor 364 can move the portion attached to the base plate 344.
- One end of the shaft 342 and the bellows 350 may be attached to the base plate 344 as described above.
- control unit 802 can be configured to transmit signals from the target drive unit 312 (change mechanism), the striker drive unit 326, and the power application unit 803 to the host control device 801.
- the control unit 802 is, for example, a PLD (abbreviation of Programmable Logic Device) such as an FPGA (abbreviation of Field Programmable Gate Array), or an ASIC (abbreviation of application specific integrated circuit), or a general purpose program incorporating a program. It may be configured by a computer or a combination of all or part of them.
- the host controller 801 has a function of controlling the entire vacuum processing apparatus VP, and is configured to control a control system of a substrate transfer system such as a transfer apparatus, a gate valve, a transfer robot and other process chambers, and the like. sell.
- the control unit 802 can be configured as an apparatus having an arithmetic unit 802a and a storage unit 802b.
- the arithmetic unit 802a can perform arithmetic processing on the signals from the target drive unit 312, the striker drive unit 326, and the power application unit 803 to obtain the current value and the amount of change.
- the storage unit 802 b can store current values and change amounts of the target drive unit 312, the striker drive unit 326, and the power application unit 803, control information, and the like.
- the storage unit 802 b calculates the stored values (the current value and the amount of change of the target drive unit 312, the striker drive unit 326, and the power application unit 803) according to the read signal from the calculation unit 802 a. Can be configured to return to.
- the target driving unit 312 can include the rotating unit 322 and the moving unit 324, and can be configured to rotate or turn the target TG or to move (advance / retract) the target TG.
- Condition striker driving unit 326 as described above, the state in which the discharge portion 320a of the striker 320 in the vicinity of the outer peripheral surface TG 0 of the target TG is disposed, and, from the outer peripheral surface TG 0 discharger 320a of the striker 320 is spaced To drive the striker 320.
- the target drive unit 312 and the striker drive unit 326 can include a motor including a sensor (e.g., an encoder) that detects an operation amount such as a rotation angle.
- the target drive unit 312 and the striker drive unit 326 can be configured as drive sources capable of controlling the operation amount (for example, the position and the angle).
- the power application unit 803 supplies a voltage (power) for inducing an arc discharge between the target TG and the anode 316.
- the power application unit 803 is configured as, for example, a power source, but may include a sensor such as a resistance meter. Further, the power application unit 803 applies a power supply that supplies power to the stabilization coil ACL, a power supply that supplies power to the filter coil FCL, a power supply that supplies power to the scanning magnetic field generation unit SCL, and applies a bias voltage to the transport unit 304 It may include a power source and the like.
- the power application unit 803 performs the target TG and the striker 320 over the period from when the discharge unit 320a of the striker 320 is disposed in the vicinity of the outer peripheral surface of the target TG until the discharge unit 320a is separated from the outer peripheral surface of the target TG. Voltage can be applied between Specifically, the state where the striker 320 is disposed in the vicinity of the outer peripheral surface of the target TG is maintained for a predetermined time, and the power application unit 803 applies a voltage between the target TG and the striker 320 for the predetermined time. sell. Then, after the power application unit 803 applies a voltage, the striker driving unit 326 can retract the striker 320, and the target TG and the striker 320 can be separated.
- the target TG may be rotated by a predetermined angle by the rotation unit 322 after the end of the arc discharge and / or moved (advanced) by a predetermined distance by the movement unit 324.
- Deposition apparatus 300 the target supports in a state where the horizontal center axis of the target TG having a cylindrical shape can be configured to generate arc discharge in the outer peripheral surface TG 0 of the target TG.
- Deposition apparatus 300 since the target TG by the target driver 312 can be rotated and / or moved, can also generate the arc discharge at any position on the outer peripheral surface TG 0 of the target TG.
- an operation of changing a position (strike position) for inducing an arc discharge by a striker in a set strike range (set area) is a film formation for forming a film on a substrate It will be described along with the operation.
- This operation can be realized by the control of the target drive unit 312 and the striker drive unit 326 by the control unit 802.
- the position L of the first strike range of the outer peripheral surface TG 0 of the target TG (L 1R ⁇ L 1E) strike position SP located in the first end of the (forward and backward direction (X-direction)
- the strike range is a range in which the strike position can be moved (changed). In other words, the strike range is a set area in the target TG, and the strike position can be changed in the area. Strike position is on the outer circumferential surface TG 0 of the target TG, the position of the moving direction of the target TG, and can be identified by the turning angle of the target TG.
- Striker 320 by a striker driving unit 326 is driven, the strike position SP, the discharge portion 320a of the outer peripheral surface TG 0 and striker 320 of the target TG is in contact, an arc discharge is induced.
- the contact position between the discharge portion 320a of the striker 320 (Strike position SP) in the arc spot is formed on the outer peripheral surface TG 0 of the target TG, defects CP by arc discharge can be formed.
- Ru The arc discharge is maintained for film formation of the substrate, and a film is formed on the substrate by plasma (ions) formed by the arc discharge. While this arc discharge is maintained, the defect portion CP formed in the target TG can expand.
- the target TG is rotated by the target driving unit 312 so as arc spot to be formed on the outer peripheral surface TG 0 of the target TG is moved in the outer peripheral surface TG 0 (rotating portion 322) by arc discharge It may be pivoted around pivot RA by a pivot angle ⁇ .
- a new defect CP may be formed (in other words by the arc discharge, defective Part CP can be expanded).
- Ru The arc discharge is maintained for film formation of the substrate, and a film is formed on the substrate by plasma (ions) formed by the arc discharge. While this arc discharge is maintained, the defect portion CP formed in the target TG can expand.
- the target driving portion 312 (the target driving portion 312 (FIG. 9D) is formed after the defect portion CP is formed circumferentially at the strike position L 1 R located at the first end of the first strike range of the outer peripheral surface TG 0
- the moving part 324 moves the target TG X mm in the forward direction (+ X direction) along the rotation axis RA.
- the circumferential defect portion CP already generated in the target TG by the arc discharge and the defect portion CP to be formed in the target TG by the subsequent arc discharge are adjacent or partially overlapped.
- the target TG can be moved X mm in the forward direction.
- the target driver 312 the rotation part 322
- the target TG can be rotated once around the rotation axis RA.
- one rotation of the target TG is achieved by multiple rotations of the target TG.
- the target TG may be rotated twice around the rotation axis RA. That is, at the first end L 1 R of the first strike range and the second end L 1 E of the strike range, the target TG is rotated twice around the rotation axis RA. On the other hand, at other strike positions, one rotation can be made. Thus, according to the control, the number of occurrences of arc discharge at each strike position SP becomes the same, and the target TG can be scraped evenly.
- the changing step and the film forming step of changing the strike position (the position where the arc discharge is induced by the striker) in the strike range (set region) is repeated while reducing the strike range. It is possible.
- the present film forming method includes a changing step of changing a strike position in a strike range, and a film forming step of forming a film on a substrate using plasma generated by causing arc discharge at the strike position. , Reducing the strike range.
- the reduction process may be performed, and then the cycle may be repeated.
- the strike range may be reduced such that the strike range after reduction falls within the strike range before reduction.
- the strike position can be changed by rotating the target TG.
- the strike position may be further changed by moving the target TG in a direction parallel to the rotation axis of the target TG.
- the strike range and the non-strike range are performed.
- strike range strike range (L nR mm ⁇ L nE mm ) of the n from a first strike range (L 1R mm ⁇ L 1E mm ) (n is an integer) can be sequentially changed to.
- the strike range is such that L> L 1R to L 1E > L 2R to L 2E > L 3R to L 3E >... L (n ⁇ 1) R to L (with respect to the length L mm of the target TG ) n-1) E > L nR to L nE
- the arc discharge can be stably generated regardless of the strike position, so that a continuous uniform film can be formed at a stable deposition rate. be able to. Further, in the present embodiment, since the process of scraping the target TG with a processing machine such as a grinder is unnecessary, downsizing of the apparatus and reduction of maintenance costs can be realized.
- the strike position is changed each time the arc discharge occurs, but the strike position is changed each time the size of the defect formed by the arc spot becomes larger than a predetermined size. It is also good. In other words, the spike position may be maintained until the size of the defect formed by the arc spot in the target TG is larger than a predetermined size.
- the deposition rate of the film formed on the substrate 1 may fluctuate depending on the position of the arc spot formed by the arc discharge. Specifically, the deposition rate may be improved when the arc spot is at the center of the anode 316, and the deposition rate may be decreased when the arc spot approaches the anode 316. Therefore, an arc spot may be formed at a position away from the anode 316. Therefore, in the present embodiment, in the striker driving unit 326, the target TG is driven such that the positional relationship between the anode 316 and the discharge unit 320a of the striker 320 in the contact state becomes constant. Thereby, the deposition rate can be stabilized.
- a film forming method for forming a ta-C film by the film forming apparatus 300 of the vacuum processing apparatus VP described above will be described.
- the adhesion layer, the lower soft magnetic layer, the seed layer, the intermediate layer, and the magnetic recording layer were sequentially stacked on the substrate using the apparatus described in the above-described embodiment.
- a ta-C film was formed as a surface protective layer on the substrate on which the magnetic recording layer was formed.
- the strike position is changed by moving the target TG X mm in the forward direction.
- the target TG is rotated once around the rotation axis RA, and then the strike position is changed by moving the target TG X mm in the advancing direction.
- Such an operation is performed until the strike position reaches the second end L1E of the first strike range (FIG. 11B).
- the target TG is rotated one more turn around the rotation axis RA (FIG. 11C), and then the target TG is moved X mm in the backward direction.
- FIGS. 13A to 13D show drive control of the target TG in the third strike range (L 3 R to L 3 E ).
- the first end L 3 R of the third strike range is L 2 R + 2X
- the second end L 3 E of the third strike range is L 2 E ⁇ 2 X.
- the wear of the target TG is estimated from the rotation angle of the target TG and the striker 320 to change the strike range.
- the strike range may be stepwise reduced so that the strike range is shortened by 2X on one side, that is, the strike range is decreased by 4X, according to the pivot angle of the striker.
- the contact pivoting angle with the striker 320 as a condition for reducing the strike range can be made, for example, based on the data on the change of the deposition rate with respect to the contact pivoting angle of the striker 320 or the stability of the arc discharge.
- the strike range may be changed each time the contact pivot angle of the striker 320 is increased by 1.0 °, but the invention is not limited thereto.
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Abstract
Description
図11A乃至図13Dは、実施例1に係るターゲット駆動制御の一例を示す図である。それぞれの図には、ターゲットTGの各ストライク位置において、ターゲットTGを回転軸RAの周りに回転させる回数である周数(360度回転した回数)が記載されている。図11A乃至図11Dに第1のストライク範囲(L1Rmm~L1Emm)におけるターゲットTGの駆動制御を示す。ストライク位置SP(進退方向の位置L1R、回動角度=0)からターゲットTGの駆動を開始し、ターゲットTGの進退方向におけるストライク位置=L1Rにおいて、ターゲットTGを回転軸RAの周りに2回転(図11A)させる。その後、ターゲットTGを進方向にXmm移動させることによってストライク位置を変更する。そして、ターゲットTGの進退方向の位置=L1R+Xにおいて、ターゲットTGを回転軸RAの周りに1回転させた後、ターゲットTGを進方向にXmm移動させることによってストライク位置を変更する。このような動作をストライク位置が第1のストライク範囲の第2端L1Eに達するまで行う(図11B)。次いで、第1のストライク範囲の第2端L1Eにおいて、ターゲットTGを回転軸RAの周りに更に1回転(図11C)させた後、ターゲットTGを退方向にXmm移動する。そして、ターゲットTGの進退方向の位置L1E-Xにおいて、ターゲットTGを回転軸RAの周りに1回転させた後、ターゲットTGを退方向にXmm移動する。これをターゲットTG進退方向の位置L1E-XからL1R+Xまで順次に繰り返し、ターゲットTGを第1のストライク範囲のL1R+Xに移動する(図11D)。このようなターゲットTGの回動動作および進退動作をターゲットTG進退方向の各ストライク位置を2回通過するまで繰り返す。
次に実施例2について説明する。各ストライク範囲でのターゲットTGの駆動制御は、実施例1と同様であるが、ストライク範囲を変更するかどうかの判定において、ターゲットTGにストライカ320の放電部が接触するときのストライカ320の回動角度(図6)を利用する。ターゲットTGにストライカ320の放電部320aが接触するときのストライカ320の回動角度をストライカ320の接触回動角度、または、単に接触回動角度という。接触回動角度は、ターゲットTGの外周面TG0の位置、換言すると、未使用のターゲットTGの外周面TG0の位置からの現在の外周面TG0の変化量を示す。実施例1ではストライク範囲を変更する際に、ターゲットTGの進退方向の各ストライク位置の通過回数(回転の回数=周数)で判定する。一方、本実施例では、ターゲットTGとストライカ320の回動角度からターゲットTGの消耗を推定して、ストライク範囲の変更を行う。
実施例3として、ストライク範囲を変更するかどうかの判定が、輸送されるプラズマ量に基づいてなされる。本実施例は、実施例1および実施例2と同様の効果を得ることができる。ここで、輸送されるプラズマ量は、輸送部304に流入する電流の積算値に基づいて評価されうる。プラズマ量は、基板に形成される膜の厚さと相関関係があり、単位時間当たりのプラズマ量が多いほど成膜速度が速くなる。また、各ストライク範囲でのターゲットTGの駆動制御は、実施例1、2と同様である。
Claims (10)
- ターゲットの近傍にストライカの放電部を配置してアーク放電を誘起し、これによって発生するプラズマを利用して基板に膜を形成する成膜方法であって、
前記ストライカによってアーク放電を誘起させる位置を前記ターゲットにおける設定された領域の中で変更する変更工程と、
前記位置でアーク放電を起こすことによって発生するプラズマを利用して基板に膜を形成する成膜工程と、
前記ターゲットの使用に応じて前記領域を縮小する縮小工程と、を含む
ことを特徴とする成膜方法。 - 前記変更工程と少なくとも1回の前記成膜工程とを含むサイクルが繰り返えされた後に、前記縮小工程が実施され、その後、前記サイクルが繰り返えされる
ことを特徴とする請求項1に記載の成膜方法。 - 前記縮小工程では、縮小前の前記領域に縮小後の前記領域が収まるように前記領域が縮小される、
ことを特徴とする請求項1又は2に記載の成膜方法。 - 前記変更工程では、前記ターゲットを回動させることによって前記位置が変更される、
ことを特徴とする請求項1乃至3のいずれか1項に記載の成膜方法。 - 前記変更工程では、前記ターゲットの回転軸に平行な方向に前記ターゲットを移動させることによって前記位置が更に変更される、
ことを特徴とする請求項4に記載の成膜方法。 - 前記縮小工程では、前記方向に関して前記領域が縮小される、
ことを特徴とする請求項5に記載の成膜方法。 - 前記変更工程では、前記方向における前記ターゲットの位置が固定された状態で前記ターゲットを複数回にわたって回動させることによる前記ターゲットが回転した回数に応じて、前記方向における前記ターゲットの位置が変更される、
ことを特徴とする請求項5又は6に記載の成膜方法。 - 前記変更工程では、前記放電部が前記ターゲットに接触するときの前記ストライカの回動角度に応じて前記方向における前記ターゲットの位置が変更される、
ことを特徴とする請求項5又は6に記載の成膜方法。 - 前記変更工程では、輸送されるプラズマ量に応じて前記方向における前記ターゲットの位置が変更される、
ことを特徴とする請求項5又は6に記載の成膜方法。 - ターゲットの近傍にストライカの放電部を配置してアーク放電を誘起し、これによって発生するプラズマを利用して基板に膜を形成する成膜装置であって、
前記ストライカによってアーク放電を誘起させる位置を変更する変更機構と、
前記位置が前記ターゲットにおける設定された領域の中で変更されるように前記変更機構を制御する制御部と、を備え、
前記制御部は、前記ターゲットの使用に応じて前記領域を段階的に縮小する、
ことを特徴とする成膜装置。
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