SG11201604448SA - Method for slicing workpiece and workpiece holder - Google Patents

Method for slicing workpiece and workpiece holder

Info

Publication number
SG11201604448SA
SG11201604448SA SG11201604448SA SG11201604448SA SG11201604448SA SG 11201604448S A SG11201604448S A SG 11201604448SA SG 11201604448S A SG11201604448S A SG 11201604448SA SG 11201604448S A SG11201604448S A SG 11201604448SA SG 11201604448S A SG11201604448S A SG 11201604448SA
Authority
SG
Singapore
Prior art keywords
workpiece
slicing
holder
workpiece holder
slicing workpiece
Prior art date
Application number
SG11201604448SA
Other languages
English (en)
Inventor
Atsuo Uchiyama
Hisakazu Takano
Masahito Saitoh
Hirotoshi Kouzu
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of SG11201604448SA publication Critical patent/SG11201604448SA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0633—Grinders for cutting-off using a cutting wire
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11201604448SA 2013-12-24 2014-11-27 Method for slicing workpiece and workpiece holder SG11201604448SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013265726A JP6000235B2 (ja) 2013-12-24 2013-12-24 ワークの切断方法及びワーク保持治具
PCT/JP2014/005931 WO2015097985A1 (ja) 2013-12-24 2014-11-27 ワークの切断方法及びワーク保持治具

Publications (1)

Publication Number Publication Date
SG11201604448SA true SG11201604448SA (en) 2016-07-28

Family

ID=53477897

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201604448SA SG11201604448SA (en) 2013-12-24 2014-11-27 Method for slicing workpiece and workpiece holder

Country Status (8)

Country Link
US (1) US10350788B2 (ja)
JP (1) JP6000235B2 (ja)
KR (1) KR102253809B1 (ja)
CN (1) CN105814669B (ja)
DE (1) DE112014005470T5 (ja)
SG (1) SG11201604448SA (ja)
TW (1) TWI580500B (ja)
WO (1) WO2015097985A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6157421B2 (ja) * 2014-07-03 2017-07-05 信越半導体株式会社 ワークの切断方法及びワーク保持治具
CN106112092A (zh) * 2016-08-16 2016-11-16 无锡尊宝电动车有限公司 一种用于抛光机外壳加工的切割机
JP6988358B2 (ja) * 2017-10-16 2022-01-05 Tdk株式会社 ワーク保持治具、電子部品処理装置および電子部品の製造方法
JP6971780B2 (ja) * 2017-10-27 2021-11-24 上村工業株式会社 ワーク保持治具及びロードアンロード装置
KR102037745B1 (ko) 2017-12-14 2019-10-29 에스케이실트론 주식회사 잉곳 클램프 및 그를 구비한 잉곳 절단용 와이어 쏘잉 장치
CN110385746B (zh) * 2019-08-29 2021-02-02 常州金纬化工成套设备有限公司 一种高分子材料聚乙烯板生产用的分段式切割设备
CN115041995B (zh) * 2022-06-27 2023-11-17 青岛高测科技股份有限公司 进给装置及切割设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0310760A (ja) * 1989-06-09 1991-01-18 Nippon Spindle Mfg Co Ltd 結晶質脆性材料切断用ワイヤソー
TW355151B (en) 1995-07-07 1999-04-01 Tokyo Seimitsu Co Ltd A method for cutting single chip material by the steel saw
JP3144269B2 (ja) 1995-07-07 2001-03-12 株式会社東京精密 単結晶材料の切断方法
JP3173564B2 (ja) * 1996-06-04 2001-06-04 株式会社東京精密 ワイヤソー
CH692331A5 (de) * 1996-06-04 2002-05-15 Tokyo Seimitsu Co Ltd Drahtsäge und Schneidverfahren unter Einsatz derselben.
JPH09325124A (ja) * 1996-06-04 1997-12-16 Tokyo Seimitsu Co Ltd Ｘ線を利用したインゴットの結晶軸方位調整方法及び装置
JP2000171417A (ja) * 1998-12-04 2000-06-23 Toshiba Ceramics Co Ltd 方位測定補助装置及びそれを用いた方位測定加工方法
JP2001050912A (ja) * 1999-08-11 2001-02-23 Rigaku Corp 単結晶インゴットの支持装置、単結晶インゴットの測定装置及び単結晶インゴットの測定方法
AU2000251024A1 (en) 2000-05-31 2001-12-11 Memc Electronic Materials S.P.A. Wire saw and process for slicing multiple semiconductor ingots
DE10052154A1 (de) 2000-10-20 2002-05-08 Freiberger Compound Mat Gmbh Verfahren und Vorrichtung zum Trennen von Einkristallen, Justiervorrichtung und Testverfahren zum Ermitteln einer Orientierung eines Einkristalls für ein derartiges Verfahren
JP4951914B2 (ja) 2005-09-28 2012-06-13 信越半導体株式会社 （１１０）シリコンウエーハの製造方法

Also Published As

Publication number Publication date
CN105814669B (zh) 2019-03-22
US20160303765A1 (en) 2016-10-20
CN105814669A (zh) 2016-07-27
KR20160102192A (ko) 2016-08-29
TWI580500B (zh) 2017-05-01
KR102253809B1 (ko) 2021-05-21
TW201540400A (zh) 2015-11-01
JP2015122424A (ja) 2015-07-02
WO2015097985A1 (ja) 2015-07-02
DE112014005470T5 (de) 2016-08-11
US10350788B2 (en) 2019-07-16
JP6000235B2 (ja) 2016-09-28

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