SG11201602919PA - Carrier-bonding methods and articles for semiconductor and interposer processing - Google Patents

Carrier-bonding methods and articles for semiconductor and interposer processing

Info

Publication number
SG11201602919PA
SG11201602919PA SG11201602919PA SG11201602919PA SG11201602919PA SG 11201602919P A SG11201602919P A SG 11201602919PA SG 11201602919P A SG11201602919P A SG 11201602919PA SG 11201602919P A SG11201602919P A SG 11201602919PA SG 11201602919P A SG11201602919P A SG 11201602919PA
Authority
SG
Singapore
Prior art keywords
articles
semiconductor
carrier
bonding methods
interposer
Prior art date
Application number
SG11201602919PA
Inventor
Darwin Gene Enicks
John Tyler Keech
Aric Bruce Shorey
Windsor Pipes Thomas Iii
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of SG11201602919PA publication Critical patent/SG11201602919PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83052—Detaching layer connectors, e.g. after testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/053—Oxides composed of metals from groups of the periodic table
    • H01L2924/0543—13th Group
    • H01L2924/05432—Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/053—Oxides composed of metals from groups of the periodic table
    • H01L2924/0544—14th Group
    • H01L2924/05442—SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10271—Silicon-germanium [SiGe]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1432—Central processing unit [CPU]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20107—Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/2011—Temperature range 400 C=<T<450 C, 673.15K =<T< 723.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/206—Length ranges
    • H01L2924/2064—Length ranges larger or equal to 1 micron less than 100 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/206—Length ranges
    • H01L2924/20641—Length ranges larger or equal to 100 microns less than 200 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/206—Length ranges
    • H01L2924/20642—Length ranges larger or equal to 200 microns less than 300 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Recrystallisation Techniques (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
SG11201602919PA 2013-10-14 2014-10-14 Carrier-bonding methods and articles for semiconductor and interposer processing SG11201602919PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361890524P 2013-10-14 2013-10-14
PCT/US2014/060340 WO2015057605A1 (en) 2013-10-14 2014-10-14 Carrier-bonding methods and articles for semiconductor and interposer processing

Publications (1)

Publication Number Publication Date
SG11201602919PA true SG11201602919PA (en) 2016-05-30

Family

ID=51799328

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201602919PA SG11201602919PA (en) 2013-10-14 2014-10-14 Carrier-bonding methods and articles for semiconductor and interposer processing

Country Status (8)

Country Link
US (1) US10510576B2 (en)
EP (1) EP3058587B1 (en)
JP (2) JP6873702B2 (en)
KR (1) KR102355656B1 (en)
CN (1) CN106133899B (en)
SG (1) SG11201602919PA (en)
TW (1) TWI632612B (en)
WO (1) WO2015057605A1 (en)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10543662B2 (en) 2012-02-08 2020-01-28 Corning Incorporated Device modified substrate article and methods for making
TWI617437B (en) 2012-12-13 2018-03-11 康寧公司 Facilitated processing for controlling bonding between sheet and carrier
US10014177B2 (en) 2012-12-13 2018-07-03 Corning Incorporated Methods for processing electronic devices
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
WO2015113020A1 (en) * 2014-01-27 2015-07-30 Corning Incorporated Articles and methods for controlled bonding of polymer surfaces with carriers
KR102353030B1 (en) * 2014-01-27 2022-01-19 코닝 인코포레이티드 Articles and methods for controlled bonding of thin sheets with carriers
SG11201608442TA (en) 2014-04-09 2016-11-29 Corning Inc Device modified substrate article and methods for making
US9640419B2 (en) * 2014-08-04 2017-05-02 Infineon Technologies Ag Carrier system for processing semiconductor substrates, and methods thereof
US9368436B2 (en) 2014-08-04 2016-06-14 Infineon Technologies Ag Source down semiconductor devices and methods of formation thereof
US10932371B2 (en) 2014-11-05 2021-02-23 Corning Incorporated Bottom-up electrolytic via plating method
KR102573207B1 (en) 2015-05-19 2023-08-31 코닝 인코포레이티드 Articles and methods for bonding sheets and carriers
EP3313799B1 (en) * 2015-06-26 2022-09-07 Corning Incorporated Methods and articles including a sheet and a carrier
US10121759B2 (en) * 2015-11-04 2018-11-06 Kulicke And Soffa Industries, Inc. On-bonder automatic overhang die optimization tool for wire bonding and related methods
US10177114B2 (en) 2015-11-25 2019-01-08 Invensas Corporation Hybrid 3D/2.5D interposer
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
CN109564902A (en) * 2016-08-01 2019-04-02 康宁股份有限公司 Soft copy encapsulation and forming method thereof based on glass
TW201825623A (en) 2016-08-30 2018-07-16 美商康寧公司 Siloxane plasma polymers for sheet bonding
TWI810161B (en) 2016-08-31 2023-08-01 美商康寧公司 Articles of controllably bonded sheets and methods for making same
TW201822282A (en) * 2016-09-09 2018-06-16 美商康寧公司 Low surface roughness substrate having a via and methods of making the same
US10002844B1 (en) 2016-12-21 2018-06-19 Invensas Bonding Technologies, Inc. Bonded structures
CN106783726A (en) * 2016-12-30 2017-05-31 苏州爱彼光电材料有限公司 Compound substrate and preparation method thereof, semiconductor devices
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
CN111372772A (en) 2017-08-18 2020-07-03 康宁股份有限公司 Temporary bonding using polycationic polymers
KR102492733B1 (en) 2017-09-29 2023-01-27 삼성디스플레이 주식회사 Copper plasma etching method and manufacturing method of display panel
JP7431160B2 (en) 2017-12-15 2024-02-14 コーニング インコーポレイテッド Methods for processing substrates and manufacturing articles including bonded sheets
US10917966B2 (en) 2018-01-29 2021-02-09 Corning Incorporated Articles including metallized vias
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11035807B2 (en) 2018-03-07 2021-06-15 General Electric Company Thermal interposer for a cryogenic cooling system
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
CN113474311B (en) 2019-02-21 2023-12-29 康宁股份有限公司 Glass or glass ceramic article with copper-metallized through-holes and process for making same
US10748798B1 (en) * 2019-07-01 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Wireless camera wafer for vacuum chamber diagnostics
US10971472B2 (en) * 2019-07-09 2021-04-06 Mikro Mesa Technology Co., Ltd. Method of liquid assisted bonding
JP7398475B2 (en) 2020-01-07 2023-12-14 長江存儲科技有限責任公司 Metal dielectric bonding method and structure
KR20230125003A (en) * 2020-12-23 2023-08-28 엔테그리스, 아이엔씨. Gas storage system and gas storage method

Family Cites Families (296)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4625913Y1 (en) 1967-12-08 1971-09-06
US3722181A (en) 1970-05-22 1973-03-27 Du Pont Chromatographic packing with chemically bonded organic stationary phases
IE35508B1 (en) 1971-08-11 1976-03-03 Intercontinental Chem Co Ltd Method of forming adhesive bonds between surfaces
JPS5057657A (en) 1973-09-22 1975-05-20
GB1583544A (en) 1977-07-25 1981-01-28 Uop Inc Metal-clad laminates
US4179324A (en) 1977-11-28 1979-12-18 Spire Corporation Process for fabricating thin film and glass sheet laminate
US4397722A (en) 1981-12-31 1983-08-09 International Business Machines Corporation Polymers from aromatic silanes and process for their preparation
US4599243A (en) 1982-12-23 1986-07-08 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4849284A (en) 1987-02-17 1989-07-18 Rogers Corporation Electrical substrate material
US4822466A (en) 1987-06-25 1989-04-18 University Of Houston - University Park Chemically bonded diamond films and method for producing same
US4810326A (en) 1987-08-31 1989-03-07 International Business Machines Corporation Interlaminate adhesion between polymeric materials and electrolytic copper surfaces
US5141800A (en) 1989-02-02 1992-08-25 Chemical Fabrics Corporation Method of making laminated PTFE-containing composites and products thereof
US5357726A (en) 1989-02-02 1994-10-25 Chemfab Corporation Composite materials for structural end uses
US4990462A (en) 1989-04-12 1991-02-05 Advanced Micro Devices, Inc. Method for coplanar integration of semiconductor ic devices
US5073181A (en) 1990-08-09 1991-12-17 Corning Incorporated Method of protecting glass surfaces using submicron refractory particles
CA2065918A1 (en) 1991-04-22 1992-10-23 Bradley W. Reed Liquid membrane modules with minimal effective membrane thickness and methods of making the same
CA2069038C (en) 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
EP0646151B1 (en) 1991-06-14 1997-11-05 W.L. Gore & Associates, Inc. Surface modified porous expanded polytetrafluoroethylene and process for making
US5222494A (en) 1991-07-31 1993-06-29 Cyberonics, Inc. Implantable tissue stimulator output stabilization system
JP3039070B2 (en) 1991-10-09 2000-05-08 住友電気工業株式会社 Fluororesin coating
FR2690279B1 (en) 1992-04-15 1997-10-03 Picogiga Sa MULTISPECTRAL PHOTOVOLTAUIC COMPONENT.
US5482896A (en) 1993-11-18 1996-01-09 Eastman Kodak Company Light emitting device comprising an organic LED array on an ultra thin substrate and process for forming same
US5616179A (en) 1993-12-21 1997-04-01 Commonwealth Scientific Corporation Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films
US5554680A (en) 1994-02-16 1996-09-10 E. I. Du Pont De Nemours And Company Heat-resistant perfluoroelastomer composition
JP3081122B2 (en) 1994-07-18 2000-08-28 シャープ株式会社 Jig for transporting substrate and method of manufacturing liquid crystal display element using the same
US5413940A (en) 1994-10-11 1995-05-09 Taiwan Semiconductor Manufacturing Company Process of treating SOG layer using end-point detector for outgassing
EP0764704B1 (en) 1995-09-25 2000-03-08 Dow Corning Corporation Use of preceramic polymers as electronic adhesives
DE69628441T2 (en) 1995-10-13 2004-04-29 Dow Global Technologies, Inc., Midland METHOD FOR PRODUCING COATED PLASTIC SURFACES
US5661618A (en) 1995-12-11 1997-08-26 International Business Machines Corporation Magnetic recording device having a improved slider
US5888591A (en) 1996-05-06 1999-03-30 Massachusetts Institute Of Technology Chemical vapor deposition of fluorocarbon polymer thin films
US5989998A (en) 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
WO2004079826A1 (en) 1996-10-22 2004-09-16 Mitsutoshi Miyasaka Method for manufacturing thin film transistor, display, and electronic device
US5820991A (en) 1997-02-24 1998-10-13 Cabo; Ana M. Fused glass sheets having ceramic paint and metal foil and method of making same
DE19711459A1 (en) 1997-03-19 1998-09-24 Flachglas Automotive Gmbh Process for the production of a curved laminated safety glass pane
JP3551702B2 (en) 1997-05-08 2004-08-11 カシオ計算機株式会社 Liquid crystal display device and driving method thereof
US5972152A (en) 1997-05-16 1999-10-26 Micron Communications, Inc. Methods of fixturing flexible circuit substrates and a processing carrier, processing a flexible circuit and processing a flexible circuit substrate relative to a processing carrier
US6687969B1 (en) 1997-05-16 2004-02-10 Micron Technology, Inc. Methods of fixturing flexible substrates and methods of processing flexible substrates
JPH1126733A (en) 1997-07-03 1999-01-29 Seiko Epson Corp Transfer method of thin film device, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display and electronic equipment
WO1999010927A1 (en) 1997-08-29 1999-03-04 Farrens Sharon N In situ plasma wafer bonding method
US5966622A (en) 1997-10-08 1999-10-12 Lucent Technologies Inc. Process for bonding crystalline substrates with different crystal lattices
US6852650B2 (en) 1998-02-05 2005-02-08 Asm Japan K.K. Insulation film on semiconductor substrate and method for forming same
EP2261915A3 (en) 1998-02-23 2011-03-09 Kabushiki Kaisha Toshiba Information storage medium, information playback method and apparatus and information recording method
US6159385A (en) 1998-05-08 2000-12-12 Rockwell Technologies, Llc Process for manufacture of micro electromechanical devices having high electrical isolation
EP1048628A1 (en) 1999-04-30 2000-11-02 Schott Glas Polymer coated glassfoil substrate
JP3202718B2 (en) 1999-02-23 2001-08-27 鹿児島日本電気株式会社 Display device manufacturing jig and display device manufacturing method using the same
US6387736B1 (en) 1999-04-26 2002-05-14 Agilent Technologies, Inc. Method and structure for bonding layers in a semiconductor device
US6338901B1 (en) 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
SG93210A1 (en) 1999-06-29 2002-12-17 Univ Singapore Method for lamination of fluoropolymer to metal and printed circuit board (pcb) substrate
TW544743B (en) 1999-08-13 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6674140B2 (en) 2000-02-01 2004-01-06 Analog Devices, Inc. Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6528145B1 (en) 2000-06-29 2003-03-04 International Business Machines Corporation Polymer and ceramic composite electronic substrates
DE10034737C2 (en) * 2000-07-17 2002-07-11 Fraunhofer Ges Forschung Process for producing a permanent release layer by plasma polymerization on the surface of a molding tool, a molding tool which can be produced by the process and its use
US6649540B2 (en) 2000-11-09 2003-11-18 The Boc Group, Inc. Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film
FR2823599B1 (en) 2001-04-13 2004-12-17 Commissariat Energie Atomique DEMOMTABLE SUBSTRATE WITH CONTROLLED MECHANICAL HOLDING AND METHOD OF MAKING
FR2823596B1 (en) 2001-04-13 2004-08-20 Commissariat Energie Atomique SUBSTRATE OR DISMOUNTABLE STRUCTURE AND METHOD OF MAKING SAME
FR2824821B1 (en) 2001-05-17 2003-08-29 Essilor Int PROCESS FOR THE PREPARATION OF A GLASS SUITABLE FOR OVERFLOWING, GLASS THUS OBTAINED AND METHOD FOR OVERFLOWING SUCH A GLASS
US7045878B2 (en) 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
US6956268B2 (en) 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
JP5415658B2 (en) 2001-05-28 2014-02-12 三菱樹脂株式会社 Intermediate film adhesive sheet and transparent laminate
JP4036018B2 (en) 2001-06-20 2008-01-23 昭和電工株式会社 Organic light emitting device and light emitting material
DE60221753T2 (en) 2001-06-29 2007-12-06 Crystal Systems Inc. Anti-fog transparent articles, fabrics which form a high hardness hydrophilic inorganic layer, and methods of making a low fog lens
US6735982B2 (en) 2001-07-12 2004-05-18 Intel Corporation Processing relatively thin glass sheets
US6649212B2 (en) 2001-07-30 2003-11-18 Guardian Industries Corporation Modified silicon-based UV absorbers useful in crosslinkable polysiloxane coatings via sol-gel polymerization
US7351300B2 (en) 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
JP2003077187A (en) 2001-08-30 2003-03-14 Toshiba Corp Method for manufacturing optical disk
JP2003071937A (en) 2001-09-05 2003-03-12 Toppan Printing Co Ltd Laminated body, method for manufacturing it, and multi- layer circuit board
US7033910B2 (en) 2001-09-12 2006-04-25 Reveo, Inc. Method of fabricating multi layer MEMS and microfluidic devices
US6528351B1 (en) 2001-09-24 2003-03-04 Jigsaw Tek, Inc. Integrated package and methods for making same
US6814833B2 (en) 2001-10-26 2004-11-09 Corning Incorporated Direct bonding of articles containing silicon
US6521857B1 (en) 2001-11-19 2003-02-18 Geomat Insights, Llc Plasma enhanced bonding method and device
US6699798B2 (en) 2002-04-24 2004-03-02 Intel Corporation Promoting adhesion of fluoropolymer films to semiconductor substrates
FR2874455B1 (en) 2004-08-19 2008-02-08 Soitec Silicon On Insulator HEAT TREATMENT BEFORE BONDING TWO PLATES
DE60325669D1 (en) 2002-05-17 2009-02-26 Semiconductor Energy Lab Method for transferring an object and method for producing a semiconductor device
KR101005989B1 (en) 2002-06-11 2011-01-05 코니카 미놀타 홀딩스 가부시키가이샤 Surface treatment method and optical part
AU2003254851A1 (en) 2002-08-07 2004-02-25 Kabushiki Kaisha Toyota Chuo Kenkyusho Laminate having adherent layer and laminate having protective film
US7129311B2 (en) 2002-09-18 2006-10-31 Arch Specialty Chemicals, Inc. Additives to prevent degradation of alkyl-hydrogen siloxanes
DE20215401U1 (en) 2002-10-07 2004-02-19 Schott Glas Composite of a thin substrate and a carrier substrate with releasable connecting means
TW200423261A (en) 2002-11-20 2004-11-01 Reveo Inc Method of fabricating multi-layer devices on buried oxide layer substrates
JP2004178891A (en) 2002-11-26 2004-06-24 Mitsubishi Electric Corp Manufacturing method of electron emitting type light emitting device
DE10353530A1 (en) 2003-11-14 2005-06-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Processing, especially thinning, wafers with components on one side involves applying coating system to wafer front with separating coating so coating system supports or carries wafer during thinning
DE10256247A1 (en) * 2002-11-29 2004-06-09 Andreas Jakob Process for treating wafers comprises covering the front side of the wafer having components with a layer system consisting of a separating layer and a protective layer before the rear side of the wafer is coated
EP1568071B1 (en) * 2002-11-29 2019-03-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Wafer comprising a separation layer and a support layer and its manufacturing method
US6762074B1 (en) 2003-01-21 2004-07-13 Micron Technology, Inc. Method and apparatus for forming thin microelectronic dies
US7089635B2 (en) 2003-02-25 2006-08-15 Palo Alto Research Center, Incorporated Methods to make piezoelectric ceramic thick film arrays and elements
US6964201B2 (en) 2003-02-25 2005-11-15 Palo Alto Research Center Incorporated Large dimension, flexible piezoelectric ceramic tapes
TWI361814B (en) 2003-03-07 2012-04-11 Kuraray Co Plastic bonding method
US7220656B2 (en) 2003-04-29 2007-05-22 Micron Technology, Inc. Strained semiconductor by wafer bonding with misorientation
US6969166B2 (en) 2003-05-29 2005-11-29 3M Innovative Properties Company Method for modifying the surface of a substrate
JP2005014599A (en) 2003-05-30 2005-01-20 Toyota Central Res & Dev Lab Inc Resin sheet and electroluminescence display device
FR2855909B1 (en) 2003-06-06 2005-08-26 Soitec Silicon On Insulator PROCESS FOR THE CONCURRENT PRODUCTION OF AT LEAST ONE PAIR OF STRUCTURES COMPRISING AT LEAST ONE USEFUL LAYER REPORTED ON A SUBSTRATE
US20040258850A1 (en) 2003-06-18 2004-12-23 Ann Straccia Environmentally friendly reactive fixture to allow localized surface engineering for improved adhesion to coated and non-coated substrates
US20050001201A1 (en) 2003-07-03 2005-01-06 Bocko Peter L. Glass product for use in ultra-thin glass display applications
FR2859312B1 (en) 2003-09-02 2006-02-17 Soitec Silicon On Insulator MULTIFUNCTIONAL METAL SEAL
US7242041B2 (en) 2003-09-22 2007-07-10 Lucent Technologies Inc. Field-effect transistors with weakly coupled layered inorganic semiconductors
US20050069713A1 (en) 2003-09-30 2005-03-31 Rahul Gupta Capillary coating method
US20050242341A1 (en) 2003-10-09 2005-11-03 Knudson Christopher T Apparatus and method for supporting a flexible substrate during processing
US6992371B2 (en) 2003-10-09 2006-01-31 Freescale Semiconductor, Inc. Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication
US20050081993A1 (en) 2003-10-16 2005-04-21 Ilkka Steven J. Method of bonding glass
GB0326537D0 (en) 2003-11-14 2003-12-17 Koninkl Philips Electronics Nv Flexible devices
US20050118742A1 (en) 2003-11-17 2005-06-02 Frank Henning Method for reducing the adhesive properties of MEMS and anti-adhesion-coated device
GB0327093D0 (en) 2003-11-21 2003-12-24 Koninkl Philips Electronics Nv Active matrix displays and other electronic devices having plastic substrates
US7041608B2 (en) 2004-02-06 2006-05-09 Eastman Kodak Company Providing fluorocarbon layers on conductive electrodes in making electronic devices such as OLED devices
US7147891B2 (en) 2004-02-11 2006-12-12 Dionex Corporation Polymer substrate coated with weak cationic-exchange functional layer
US7087134B2 (en) 2004-03-31 2006-08-08 Hewlett-Packard Development Company, L.P. System and method for direct-bonding of substrates
JP2005300972A (en) 2004-04-13 2005-10-27 Seiko Epson Corp Method for manufacturing display device and substrate sticking device
JP2006003684A (en) 2004-06-18 2006-01-05 Nikon Corp Manufacturing method of substrateless filter
ITMI20041252A1 (en) 2004-06-22 2004-09-22 Solvay Solexis Spa PERFLUOROELASTOMERIC COMPOSITIONS
US7261793B2 (en) 2004-08-13 2007-08-28 Hewlett-Packard Development Company, L.P. System and method for low temperature plasma-enhanced bonding
US20060134362A1 (en) 2004-12-17 2006-06-22 3M Innovative Properties Company Optically clear pressure sensitive adhesive
US7541264B2 (en) * 2005-03-01 2009-06-02 Dow Corning Corporation Temporary wafer bonding method for semiconductor processing
JP2006255926A (en) * 2005-03-15 2006-09-28 Teijin Ltd Laminated film
CN101175633B (en) 2005-04-19 2011-12-21 宇部兴产株式会社 Polyimide film laminate
US20060246218A1 (en) 2005-04-29 2006-11-02 Guardian Industries Corp. Hydrophilic DLC on substrate with barrier discharge pyrolysis treatment
US7462552B2 (en) 2005-05-23 2008-12-09 Ziptronix, Inc. Method of detachable direct bonding at low temperatures
US20070020451A1 (en) 2005-07-20 2007-01-25 3M Innovative Properties Company Moisture barrier coatings
US7166520B1 (en) 2005-08-08 2007-01-23 Silicon Genesis Corporation Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process
WO2007018028A1 (en) 2005-08-09 2007-02-15 Asahi Glass Company, Limited Thin sheet glass laminate and method for manufacturing display using thin sheet glass laminate
US8039049B2 (en) 2005-09-30 2011-10-18 Tokyo Electron Limited Treatment of low dielectric constant films using a batch processing system
US7901743B2 (en) 2005-09-30 2011-03-08 Tokyo Electron Limited Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system
US7462551B2 (en) 2005-09-30 2008-12-09 Intel Corporation Adhesive system for supporting thin silicon wafer
JP2007138144A (en) 2005-10-18 2007-06-07 Hitachi Chem Co Ltd Silica-based coated film-forming composition
KR20070047114A (en) 2005-11-01 2007-05-04 주식회사 엘지화학 Manufacturing method of device with flexible substrate and device with flexible substrate manufactured by the same
WO2007055142A1 (en) 2005-11-11 2007-05-18 Semiconductor Energy Laboratory Co., Ltd. Layer having functionality, method for forming flexible substrate having the same, and method for manufacturing semiconductor device
FR2893750B1 (en) 2005-11-22 2008-03-14 Commissariat Energie Atomique METHOD FOR MANUFACTURING SCREEN TYPE FLEXIBLE ELECTRONIC DEVICE COMPRISING A PLURALITY OF THIN FILM COMPONENTS
US20070134784A1 (en) 2005-12-09 2007-06-14 Halverson Kurt J Microreplicated microarrays
KR100831562B1 (en) 2006-03-23 2008-05-21 주식회사 엘지화학 Pressure Sensitive Adhesive Composition for Transferring Flexible Substrate
US7737035B1 (en) 2006-03-31 2010-06-15 Novellus Systems, Inc. Dual seal deposition process chamber and process
WO2007121524A1 (en) 2006-04-20 2007-11-01 Epitactix Pty Ltd. Method of manufacture and resulting structures for semiconductor devices
WO2007129554A1 (en) 2006-05-08 2007-11-15 Asahi Glass Company, Limited Thin-sheet glass laminate, process for manufacturing display apparatus using the laminate, and supporting glass substrate
KR101358255B1 (en) 2006-06-27 2014-02-05 엘지디스플레이 주식회사 Hydrophobic mold of photo-curable type and manufacturing method for the same
WO2008007622A1 (en) 2006-07-12 2008-01-17 Asahi Glass Company, Limited Glass substrate with protective glass, process for producing display using glass substrate with protective glass, and silicone for release paper
US20080044588A1 (en) 2006-08-15 2008-02-21 Sakhrani Vinay G Method for Treating a Hydrophilic Surface
US8084103B2 (en) 2006-08-15 2011-12-27 Sakhrani Vinay G Method for treating a hydrophilic surface
JP2008072087A (en) 2006-08-16 2008-03-27 Kyoto Univ Semiconductor device and manufacturing method of the semiconductor device, and display device
EP2074188A1 (en) 2006-10-13 2009-07-01 Sunwoo AMC Co., Ltd. Laminating film of plastic/teflon-silicon and method for preparing the same
JP5008381B2 (en) 2006-11-15 2012-08-22 富士フイルム株式会社 Method for producing organic electroluminescence light-emitting panel using flexible substrate, organic electroluminescence light-emitting panel produced thereby, and supporting substrate used for production thereof
KR100890250B1 (en) 2007-01-08 2009-03-24 포항공과대학교 산학협력단 Method of manufacturing a flexible device and method of manufacturing a flexible display
US8110906B2 (en) 2007-01-23 2012-02-07 Infineon Technologies Ag Semiconductor device including isolation layer
WO2008111361A1 (en) 2007-03-12 2008-09-18 Asahi Glass Company, Limited Glass substrate provided with protection glass and method for manufacturing display device using glass substrate provided with protection glass
US8399047B2 (en) 2007-03-22 2013-03-19 The Regents Of The Univeristy Of Michigan Multifunctional CVD coatings
WO2008132085A1 (en) 2007-04-26 2008-11-06 Basf Se Silanes containing phenothiazine-s-oxide or phenothiazine-s,s-dioxide groups and the use thereof in oleds
US7635617B2 (en) 2007-04-27 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device
JP5343849B2 (en) 2007-06-20 2013-11-13 旭硝子株式会社 Oxide glass surface treatment method
JP5788173B2 (en) 2007-06-25 2015-09-30 ブルーワー サイエンス アイ エヌシー． High temperature spin-on temporary bonding composition
KR20080113576A (en) 2007-06-25 2008-12-31 엘지디스플레이 주식회사 Liquid crystal display device and method for fabricating thereof
TW200907003A (en) 2007-07-03 2009-02-16 Hitachi Chemical Co Ltd Adhesive composition and method of manufacturing thereof, adhesive member using the adhesive composition and method of manufacturing thereof, supporting member for mounting semiconductor and method of manufacturing thereof, and semiconductor apparatus an
JP4337935B2 (en) 2007-07-11 2009-09-30 セイコーエプソン株式会社 Bonded body and bonding method
JP2009028922A (en) 2007-07-24 2009-02-12 Seiko Epson Corp Joining method, joint article, droplet ejection head and droplet ejection device
JP2009028923A (en) 2007-07-24 2009-02-12 Seiko Epson Corp Joining method, joint article and wiring board
JP2009074002A (en) 2007-09-21 2009-04-09 Seiko Epson Corp Adhesion sheet, joining method and joined body
US20090091025A1 (en) 2007-10-04 2009-04-09 Agency For Science, Technology And Research Method for forming and releasing interconnects
JP4710897B2 (en) 2007-11-28 2011-06-29 セイコーエプソン株式会社 Separation method of joined body
KR101445734B1 (en) 2007-12-07 2014-10-01 삼성전자 주식회사 Liquid Crystal Display
DE202009018064U1 (en) 2008-01-24 2010-12-02 Brewer Science, Inc. Articles in reversibly attaching a device wafer to a carrier substrate
JP5024087B2 (en) 2008-02-05 2012-09-12 旭硝子株式会社 GLASS LAMINATE, PANEL FOR DISPLAY DEVICE WITH SUPPORT AND METHOD FOR PRODUCING THEM
GB0802912D0 (en) 2008-02-15 2008-03-26 Carben Semicon Ltd Thin-film transistor, carbon-based layer and method of production thereof
EP2274162A1 (en) 2008-04-08 2011-01-19 The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Assemblies and methods for reducing warp and bow of a flexible substrate during semiconductor processing
KR101500684B1 (en) 2008-04-17 2015-03-10 삼성디스플레이 주식회사 Carrier glasses and menufacturing method of flexible display device using the same
EP2273475A1 (en) 2008-04-17 2011-01-12 Asahi Glass Company, Limited Glass laminate, display panel with support, method for producing glass laminate and method for manufacturing display panel with support
US7842548B2 (en) 2008-04-22 2010-11-30 Taiwan Semconductor Manufacturing Co., Ltd. Fixture for P-through silicon via assembly
KR101458901B1 (en) 2008-04-29 2014-11-10 삼성디스플레이 주식회사 Method of manufacturing flexible display device
US7960840B2 (en) 2008-05-12 2011-06-14 Texas Instruments Incorporated Double wafer carrier process for creating integrated circuit die with through-silicon vias and micro-electro-mechanical systems protected by a hermetic cavity created at the wafer level
JP5029523B2 (en) 2008-07-14 2012-09-19 旭硝子株式会社 GLASS LAMINATE, PANEL FOR DISPLAY DEVICE WITH SUPPORT, PANEL FOR DISPLAY DEVICE, DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
DE102008045370B4 (en) 2008-09-02 2010-07-08 Grenzebach Maschinenbau Gmbh Method and device for transporting large-area, thin glass plates
US20110311789A1 (en) 2008-09-12 2011-12-22 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Methods for Attaching Flexible Substrates to Rigid Carriers and Resulting Devices
TWI354854B (en) 2008-09-15 2011-12-21 Ind Tech Res Inst Substrate structures applied in flexible electrica
JP2010107597A (en) 2008-10-28 2010-05-13 Seiko Epson Corp Optical element and method for producing same
CN102272231B (en) 2008-11-19 2013-10-30 陶氏康宁公司 Silicone composition and method for preparing same
US8211270B2 (en) 2008-11-21 2012-07-03 Nitto Denko Corporation Method of detaching attached boards from each other
DE102009022628A1 (en) 2008-12-05 2010-06-10 Evonik Goldschmidt Gmbh Method for modifying surfaces
TW201033000A (en) 2009-01-09 2010-09-16 Asahi Glass Co Ltd Glass laminate and manufacturing method therefor
US9063605B2 (en) 2009-01-09 2015-06-23 Apple Inc. Thin glass processing using a carrier
JP5207306B2 (en) 2009-01-26 2013-06-12 武井電機工業株式会社 Thin film removal method and apparatus for thin film laminated glass substrate
WO2010098762A1 (en) 2009-02-27 2010-09-02 Exxonmobil Oil Corporation Plasma treated evoh multilayer film
TWI410329B (en) 2009-03-09 2013-10-01 Ind Tech Res Inst Apparatus for releasing a flexible device and method thereof
JP5402184B2 (en) 2009-04-13 2014-01-29 日本電気硝子株式会社 Glass film and method for producing the same
CN101873532B (en) 2009-04-22 2013-01-02 电信科学技术研究院 Method, base station and UE (User End) for sending and acquiring control information in multicast broadcast system
WO2010129459A2 (en) 2009-05-06 2010-11-11 Corning Incorporated Carrier for glass substrates
WO2010128611A1 (en) * 2009-05-08 2010-11-11 日立化成工業株式会社 Film-like adhesive agent for sealing semiconductor, semiconductor device, and process for manufacturing the semiconductor device
CN101924067B (en) 2009-06-09 2013-05-08 财团法人工业技术研究院 Method for separating flexible membrane from carrier plate and manufacturing method of flexible electronic device
JP2010284869A (en) 2009-06-11 2010-12-24 Shin-Etsu Chemical Co Ltd Joining member
JP5594522B2 (en) 2009-07-03 2014-09-24 日本電気硝子株式会社 Glass film laminate for manufacturing electronic devices
US8568184B2 (en) 2009-07-15 2013-10-29 Apple Inc. Display modules
US7987566B2 (en) 2009-07-15 2011-08-02 Sturzebecher Richard J Capacitor forming method
CN101989469A (en) 2009-07-31 2011-03-23 群康科技(深圳)有限公司 Current-conducting plate
US8048794B2 (en) 2009-08-18 2011-11-01 International Business Machines Corporation 3D silicon-silicon die stack structure and method for fine pitch interconnection and vertical heat transport
DE102009028640A1 (en) 2009-08-19 2011-02-24 Evonik Goldschmidt Gmbh Curable composition containing urethane-containing silylated polymers and their use in sealants and adhesives, binders and / or surface modifiers
US9847243B2 (en) * 2009-08-27 2017-12-19 Corning Incorporated Debonding a glass substrate from carrier using ultrasonic wave
KR20120059512A (en) 2009-08-27 2012-06-08 아사히 가라스 가부시키가이샤 Multilayer structure with flexible base material and support, panel for use in electronic device provided with support and production method for panel for use in electronic device
JP5562597B2 (en) 2009-08-28 2014-07-30 荒川化学工業株式会社 SUPPORT, GLASS SUBSTRATE LAMINATE, DISPLAY DEVICE PANEL WITH SUPPORT AND METHOD FOR PRODUCING DISPLAY DEVICE PANEL
CN102481764B (en) 2009-09-08 2014-11-05 旭硝子株式会社 Glass/resin laminate, and electronic device using same
ES2660203T3 (en) 2009-09-11 2018-03-21 Henkel IP & Holding GmbH Compositions for polymer bonding
EP2479151B1 (en) 2009-09-18 2020-10-28 Nippon Electric Glass Co., Ltd. Method for producing glass film, method for processing glass film, and glass film laminate
WO2011048979A1 (en) * 2009-10-20 2011-04-28 旭硝子株式会社 Glass laminate, glass laminate manufacturing method, display panel manufacturing method, and display panel obtained by means of display panel manufacturing method
WO2011048978A1 (en) 2009-10-20 2011-04-28 旭硝子株式会社 Glass laminate, display device panel with supporting body, display device panel, display device, method for producing glass laminate, method for producing display device panel with supporting body, and method for producing display device panel
KR20110045136A (en) 2009-10-26 2011-05-04 주식회사 삼영테크놀로지 Coating method for separating display panel from window
US9019211B2 (en) 2009-10-30 2015-04-28 Corning Incorporated Methods and apparatus for providing touch sensitive displays
RU2593841C2 (en) 2009-12-17 2016-08-10 Керамтек Гмбх Conditioning of surface of improving bone cement adhesion to ceramic substrates
WO2011086991A1 (en) 2010-01-12 2011-07-21 日本電気硝子株式会社 Glass film laminate and process for production thereof, and process for production of glass film
US8695832B2 (en) * 2010-02-02 2014-04-15 Klaus Thielen Can lid and method for producing a can lid
GB201003067D0 (en) 2010-02-23 2010-04-07 Semblant Ltd Plasma-polymerized polymer coating
JP2011201977A (en) 2010-03-24 2011-10-13 Seiko Epson Corp Bonding method
JP2011201976A (en) 2010-03-24 2011-10-13 Seiko Epson Corp Bonding method
US8349727B2 (en) 2010-04-08 2013-01-08 Liang Guo Integrated method for high-density interconnection of electronic components through stretchable interconnects
US20110256385A1 (en) 2010-04-15 2011-10-20 Seiko Epson Corporation Bonding film-attached substrate and bonding film-attached substrate manufacturing method
JP2011235556A (en) 2010-05-11 2011-11-24 Seiko Epson Corp Excitation energy specification method and apparatus, and bonding method and apparatus
JP5835214B2 (en) 2010-05-11 2015-12-24 旭硝子株式会社 LAMINATE MANUFACTURING METHOD AND LAMINATE
JP5516046B2 (en) 2010-05-11 2014-06-11 セイコーエプソン株式会社 Bonding film transfer sheet and bonding method
GB2481187B (en) 2010-06-04 2014-10-29 Plastic Logic Ltd Processing substrates
KR101721414B1 (en) 2010-06-09 2017-03-31 삼성디스플레이 주식회사 Backlight assembly and liquid crystal display apparatus including the same
US8852391B2 (en) 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
TWI432835B (en) 2010-06-24 2014-04-01 Au Optronics Corp Flexible display panel and method of fabricating the same
DE102010025967B4 (en) 2010-07-02 2015-12-10 Schott Ag Method for producing a multiplicity of holes, device for this and glass interposer
CN101916022B (en) 2010-07-06 2012-10-10 友达光电股份有限公司 Flexible display panel and manufacturing method thereof
JP5602529B2 (en) 2010-07-29 2014-10-08 日本合成化学工業株式会社 Manufacturing method of laminate, manufacturing method of polarizing plate with glass substrate, and polarizing plate with glass substrate obtained thereby
US20120035309A1 (en) 2010-08-06 2012-02-09 Baker Hughes Incorporated Method to disperse nanoparticles into elastomer and articles produced therefrom
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
JP5462107B2 (en) 2010-08-09 2014-04-02 株式会社日本製鋼所 Method and apparatus for manufacturing hollow molded article
US8846499B2 (en) 2010-08-17 2014-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Composite carrier structure
TWI446420B (en) 2010-08-27 2014-07-21 Advanced Semiconductor Eng Releasing carrier method for semiconductor process
US20120063952A1 (en) 2010-09-10 2012-03-15 Hong Keith C Uv resistant clear laminates
KR101164945B1 (en) 2010-09-13 2012-07-12 한국과학기술원 Fabrication Method of Flexible Devices
KR101779586B1 (en) 2010-09-27 2017-10-10 엘지디스플레이 주식회사 Method of fabricating display device using flexible plastic substrate
US20130188324A1 (en) 2010-09-29 2013-07-25 Posco Method for Manufacturing a Flexible Electronic Device Using a Roll-Shaped Motherboard, Flexible Electronic Device, and Flexible Substrate
US8822306B2 (en) 2010-09-30 2014-09-02 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
US8859103B2 (en) 2010-11-05 2014-10-14 Joseph Eugene Canale Glass wafers for semiconductor fabrication processes and methods of making same
KR101295532B1 (en) 2010-11-11 2013-08-12 엘지디스플레이 주식회사 Method for manufacturing Flexible Flat Device
KR101271838B1 (en) 2010-11-24 2013-06-07 주식회사 포스코 Method of manufacturing flexible electronic device, flexibleelectronic device and flexible substrate using a reinforcing substrate
EP2458620B1 (en) 2010-11-29 2021-12-01 IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik Fabrication of graphene electronic devices using step surface contour
TW201238014A (en) 2010-11-30 2012-09-16 Corning Inc Methods of forming a glass wiring board substrate
JP2012119611A (en) 2010-12-03 2012-06-21 Asahi Glass Co Ltd Manufacturing method of through hole electrode substrate
KR101049380B1 (en) * 2010-12-21 2011-07-15 한국기계연구원 Tsv for 3d packaging of semiconductor device and fabrication method thereof
CN102070120B (en) 2010-12-31 2012-09-05 东南大学 Preparation method for high-density interposer for microelectronic system-in-package
JP2012166999A (en) 2011-02-16 2012-09-06 Asahi Glass Co Ltd Method for manufacturing glass substrate for interposer, method for manufacturing interposer, glass substrate for interposer, and interposer
KR101918284B1 (en) 2011-03-03 2019-01-30 엘지디스플레이 주식회사 Method of manufacturing a flexible display device
JP2012209545A (en) 2011-03-17 2012-10-25 Sekisui Chem Co Ltd Manufacturing method of semiconductor laminate
TWI445626B (en) 2011-03-18 2014-07-21 Eternal Chemical Co Ltd Method for fabricating a flexible device
JP2012227310A (en) 2011-04-19 2012-11-15 Panasonic Corp Ceramic multilayer substrate, and method of manufacturing the same
KR20140018937A (en) 2011-04-22 2014-02-13 아사히 가라스 가부시키가이샤 Laminate, method for producing same, and use of same
JP5862238B2 (en) 2011-05-27 2016-02-16 東洋紡株式会社 LAMINATE, MANUFACTURING METHOD THEREOF, AND DEVICE STRUCTURE MANUFACTURING METHOD USING THE SAME
JP5862866B2 (en) 2011-05-30 2016-02-16 東洋紡株式会社 Method for producing laminate and method for producing film device using the laminate
JP5883236B2 (en) 2011-06-10 2016-03-09 日東電工株式会社 Carrier material for thin layer substrate
KR20130000211A (en) 2011-06-22 2013-01-02 삼성전자주식회사 Methods for processing substrates
KR20130003997A (en) 2011-07-01 2013-01-09 엘지디스플레이 주식회사 Separation-combination method of carrier substrate and slim glass
WO2013006865A2 (en) 2011-07-07 2013-01-10 Brewer Science Inc. Methods of transferring device wafers or layers between carrier substrates and other surfaces
JP2013024100A (en) 2011-07-20 2013-02-04 Yamaha Motor Co Ltd Internal combustion engine and saddle-type vehicle equipped with the same
US8617925B2 (en) * 2011-08-09 2013-12-31 Soitec Methods of forming bonded semiconductor structures in 3D integration processes using recoverable substrates, and bonded semiconductor structures formed by such methods
US8383460B1 (en) 2011-09-23 2013-02-26 GlobalFoundries, Inc. Method for fabricating through substrate vias in semiconductor substrate
JP5963218B2 (en) 2011-09-27 2016-08-03 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Carrier for thin glass substrate and method of using the same
JP5790392B2 (en) 2011-10-12 2015-10-07 旭硝子株式会社 Manufacturing method of electronic device
JP5796449B2 (en) 2011-10-12 2015-10-21 旭硝子株式会社 Manufacturing method of electronic device, manufacturing method of carrier substrate with resin layer
KR101973826B1 (en) 2011-10-18 2019-08-26 에이지씨 가부시키가이샤 Laminate, method for producing laminate, and method for producing glass substrate having member for electronic devices attached thereto
KR101820171B1 (en) 2011-10-24 2018-01-19 엘지디스플레이 주식회사 Method of fabricating lightweight and thin liquid crystal display device
US8696864B2 (en) * 2012-01-26 2014-04-15 Promerus, Llc Room temperature debonding composition, method and stack
US8550061B2 (en) 2012-01-26 2013-10-08 Maruzen Company Limited Toy gun
WO2013119737A2 (en) 2012-02-08 2013-08-15 Corning Incorporated Processing flexible glass with a carrier
US9725357B2 (en) 2012-10-12 2017-08-08 Corning Incorporated Glass articles having films with moderate adhesion and retained strength
US8975157B2 (en) * 2012-02-08 2015-03-10 Advanced Semiconductor Engineering, Inc. Carrier bonding and detaching processes for a semiconductor wafer
JP2013184346A (en) 2012-03-07 2013-09-19 Asahi Glass Co Ltd Glass laminate, and method for producing electronic device
JP2013184872A (en) 2012-03-09 2013-09-19 Nippon Electric Glass Co Ltd Edge treatment method of glass substrate, edge treatment device for glass substrate, and glass substrate
JP2013207084A (en) 2012-03-28 2013-10-07 Sumitomo Electric Ind Ltd Substrate module with radiator plate and method of manufacturing the same
JP2013216513A (en) 2012-04-05 2013-10-24 Nippon Electric Glass Co Ltd Method for cutting glass film and glass film lamination body
DE102012207149A1 (en) 2012-04-27 2013-10-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Composite with temporary protective film
JP5991373B2 (en) 2012-05-29 2016-09-14 旭硝子株式会社 Glass laminate and electronic device manufacturing method
KR20130095605A (en) 2012-06-22 2013-08-28 코스텍시스템(주) Apparatus for bonding and debonding between device wafer and carrier wafer for semiconductor manufacturing
CN102815052B (en) 2012-06-29 2016-08-24 法国圣戈班玻璃公司 Super-hydrophobic anti-reflection substrate and preparation method thereof
JP2014019597A (en) 2012-07-17 2014-02-03 Nippon Electric Glass Co Ltd Method for producing glass film, and glass film laminate
CN102820262A (en) 2012-09-05 2012-12-12 江苏物联网研究发展中心 Glass through hole manufacturing and interconnecting method
KR101949561B1 (en) 2012-10-12 2019-02-18 코닝 인코포레이티드 Articles having retained strength
US20140150244A1 (en) 2012-11-30 2014-06-05 General Electric Company Adhesive-free carrier assemblies for glass substrates
TWI617437B (en) 2012-12-13 2018-03-11 康寧公司 Facilitated processing for controlling bonding between sheet and carrier
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
US10014177B2 (en) 2012-12-13 2018-07-03 Corning Incorporated Methods for processing electronic devices
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
KR20150095822A (en) 2012-12-13 2015-08-21 코닝 인코포레이티드 Glass and methods of making glass articles
US10000675B2 (en) 2013-03-03 2018-06-19 John Cleaon Moore Temporary adhesive with tunable adhesion force sufficient for processing thin solid materials
WO2014164206A1 (en) 2013-03-09 2014-10-09 John Moore Aqueous detergent soluble coating and adhesive and methods of temporary bonding for manufacturing
TWI594960B (en) 2013-03-15 2017-08-11 康寧公司 Bulk annealing of glass sheets
KR101432575B1 (en) 2013-03-29 2014-08-21 엘지디스플레이 주식회사 Method of fabricating lightweight and thin liquid crystal display device
US20150099110A1 (en) 2013-10-07 2015-04-09 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
JP6176067B2 (en) 2013-11-11 2017-08-09 旭硝子株式会社 GLASS LAMINATE AND ELECTRONIC DEVICE MANUFACTURING METHOD
JP6119567B2 (en) 2013-11-11 2017-04-26 旭硝子株式会社 Method for manufacturing glass laminate and method for manufacturing electronic device
JP6136909B2 (en) 2013-12-17 2017-05-31 旭硝子株式会社 Manufacturing method of support substrate with resin layer, manufacturing method of glass laminate, manufacturing method of electronic device
WO2015113020A1 (en) 2014-01-27 2015-07-30 Corning Incorporated Articles and methods for controlled bonding of polymer surfaces with carriers
KR102353030B1 (en) 2014-01-27 2022-01-19 코닝 인코포레이티드 Articles and methods for controlled bonding of thin sheets with carriers
KR20160114106A (en) 2014-01-27 2016-10-04 코닝 인코포레이티드 Treatment of a surface modification layer for controlled bonding of thin sheets with carriers
JP6443350B2 (en) 2014-02-07 2018-12-26 Ａｇｃ株式会社 Glass laminate
SG11201608442TA (en) 2014-04-09 2016-11-29 Corning Inc Device modified substrate article and methods for making
CN106163798B (en) 2014-04-10 2019-05-10 Ａｇｃ株式会社 Glass laminate and its manufacturing method, the manufacturing method of electronic device
CN106232351A (en) 2014-04-25 2016-12-14 旭硝子株式会社 Glass laminate and the manufacture method of electronic device
KR20170039135A (en) 2014-08-01 2017-04-10 아사히 가라스 가부시키가이샤 Support substrate with inorganic film, glass laminate, method for producing these, and method for producing electronic device
EP3313799B1 (en) 2015-06-26 2022-09-07 Corning Incorporated Methods and articles including a sheet and a carrier
SG11201901745YA (en) 2016-08-22 2019-04-29 Corning Inc Articles of controllably bonded sheets and methods for making same

Also Published As

Publication number Publication date
TW201517175A (en) 2015-05-01
JP2019208054A (en) 2019-12-05
WO2015057605A1 (en) 2015-04-23
EP3058587A1 (en) 2016-08-24
CN106133899B (en) 2019-11-12
TWI632612B (en) 2018-08-11
US10510576B2 (en) 2019-12-17
JP6874068B2 (en) 2021-05-19
KR102355656B1 (en) 2022-01-26
EP3058587B1 (en) 2022-09-14
KR20160070179A (en) 2016-06-17
US20150102498A1 (en) 2015-04-16
CN106133899A (en) 2016-11-16
JP2017500753A (en) 2017-01-05
JP6873702B2 (en) 2021-05-19

Similar Documents

Publication Publication Date Title
SG11201602919PA (en) Carrier-bonding methods and articles for semiconductor and interposer processing
HK1223896A1 (en) Systems and methods for order processing
HK1214408A1 (en) Semiconductor device and method for manufacturing same
IL243695B (en) Food processing device
SG11201605335PA (en) Process chamber and semiconductor processing apparatus
EP2966673A4 (en) Substrate processing device and substrate processing method
EP2949804A4 (en) Garment processing apparatus
EP2930741A4 (en) Semiconductor device and method for manufacturing semiconductor device
SG11201600633WA (en) Pre-cleaning chamber and semiconductor processing device
EP2980833A4 (en) Substrate processing device and substrate processing method
EP3028299A4 (en) Methods and structures for processing semiconductor devices
SG11201604486XA (en) Semiconductor wafer processing methods and apparatus
EP2784810A4 (en) Chip packaging structure and chip packaging method
HK1219347A1 (en) Semiconductor device and manufacturing method for same
EP2955748A4 (en) Semiconductor device and method for manufacturing same
HK1257621A1 (en) Substrate processing apparatus
SG10201604835TA (en) Semiconductor device inspection device and semiconductor device inspection method
SG11201508291QA (en) Semiconductor device and method for manufacturing semiconductor device
EP2951580A4 (en) Articles and methods for rapid thc detection
EP2838303A4 (en) Method and device for processing carrier aggregation
HRP20182185T1 (en) Method for processing vegetables
EP3054477A4 (en) Semiconductor device and method for manufacturing same
SG11201600284VA (en) Thermal processing in silicon
EP2945189A4 (en) Semiconductor device and method for manufacturing same
EP3076642A4 (en) Operation processing method and device