CN102820262A - Glass through hole manufacturing and interconnecting method - Google Patents
Glass through hole manufacturing and interconnecting method Download PDFInfo
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- CN102820262A CN102820262A CN2012103256576A CN201210325657A CN102820262A CN 102820262 A CN102820262 A CN 102820262A CN 2012103256576 A CN2012103256576 A CN 2012103256576A CN 201210325657 A CN201210325657 A CN 201210325657A CN 102820262 A CN102820262 A CN 102820262A
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Abstract
The invention discloses a glass through hole manufacturing and interconnecting method. The method comprises the following steps of: binding and linking a plurality of glass substrates in a laminated manner through a polymer; manufacturing through holes which are vertical with the surfaces of the laminated glass substrates; metallically filling the through holes of the laminated glass; and unlinking the laminated glass. The method provided by the invention has the advantages that the though holes are simultaneously manufactured in a plurality of the layers of the glass substrates by using a glass substrate laminated linking method, so that the problems of low manufacturing efficiency, expensive cost, low yield and the like caused by the traditional method for manufacturing the through hole by using a single substrate can be solved.
Description
Technical field
The present invention relates to a kind of method of making and interconnection of glass through hole, belong to the microelectronic packaging technology field.
Background technology
Along with people's is to the requirement of the electronic product development to directions such as miniaturization, multi-functional, environment-friendly types; People make great efforts to seek to do electronic system more little; Integrated level is increasingly high, and function does more and more, more and more stronger, has produced many new technologies, new material and new design thus; Wherein (System-in-Package, SiP) technology is exactly these technological typical case representatives for laminated chips encapsulation technology and system in package.
Three-dimensional packaging technology is meant under the prerequisite that does not change package body sizes, in same packaging body, stacks the encapsulation technology of two above chips in vertical direction, and it originates from the stacked package of flash memory (NOR/NAND) and SDRAM.(Through Silicon Via is to realize one of key technology in the three-dimension packaging TSV) and silicon is bored a hole.This with respect to traditional mutual contact mode, can realize the total silicon encapsulation owing to TSV, and is compatible mutually with semiconductor CMOS technology, but and equal proportion increase density of components, reduce the interconnect delay problem, realize that high speed is interconnected.
The advantage that silicon chip TSV is compared to common substrate is: 1) the silicon chip through-hole aperture is much smaller than the printed circuit board through-hole aperture; 2) depth-to-width ratio of silicon chip through hole is much larger than the depth-to-width ratio of printed circuit board through-hole; 3) density of silicon chip through hole is much larger than the density of printed circuit board through-hole.Based on above characteristics, so its development of studying MEMS and semiconductor technology plays an important role.
And being compared to the advantage of ordinary silicon substrate, glass substrate TGV (Through Glass Via) is: 1) with low cost; 2) the sealing performance is superior; 3) insulating properties is better; 4) high-frequency loss is lower; 5) high-modulus; 6) transparent, show superior optical property.
The manufacture craft of conventional one-piece glass substrate TGV pore-forming comprises: 1) ultrasonic drilling; 2) sand-blast; 3) wet etching; 4) dry etching; 5) laser ablation; 6) machine drilling.
But, because the technology that adopts all is based on the monolithic glass substrate, also there is influence in the price of final product, even still there are problems in a lot of technology, wherein to make be a crucial difficult problem to the through hole of high-aspect-ratio.Reliability consideration to through hole is still continuing.Make through hole for the monolithic glass substrate, its cost of manufacture is high, efficient is low.
Because the multiple unfavorable factor of the method for these monolithic traditional manufacturing technique,, and finally go out commodity price and all cause great influence the rate of finished products and the reliability of product.Various new processes also progressively are suggested and discuss, but these methods all on monolithic manufacture craft basis, carry out, have shortcomings such as make efficiency is low, cost height.
Summary of the invention
The objective of the invention is to overcome the deficiency that exists in the prior art; A kind of method of making and interconnection of glass through hole is provided; The compound glass substrate stack is bonded together; And realize the glass through hole through modes such as machinery, laser, sandblast or etchings, to adopt the interconnection structure of TGV technology in effective completion three-dimension packaging or the MEMS encapsulation.
The technical scheme that the present invention adopts comprises the manufacture method of glass through hole and the manufacture method of glass through-hole interconnection.
The manufacture method of glass through hole may further comprise the steps:
1) through hot-press method a plurality of glass substrate laminations is bonded together, forms the lamination bonding structure of compound glass substrate;
2) the laminated glass substrate behind the bonding is produced the through-hole structure perpendicular to the laminated glass substrate surface;
3) the laminated glass substrate is torn open bonding, reach glass substrate and separate.
After the step 3, every independent glass substrate is carried out cleaning and removing remove adhesive, so that the technology of follow-up making interconnection.
The manufacture method of glass through-hole interconnection may further comprise the steps:
1) through hot-press method a plurality of glass substrate laminations is bonded together, forms the lamination bonding structure of compound glass substrate;
2) the laminated glass substrate behind the bonding is produced the through-hole structure perpendicular to the laminated glass substrate surface;
3) on the sidewall of said through hole, adopt physical deposition or chemical deposition to make adhesion layer;
4) with the filling of metallizing of the through hole of laminated glass substrate;
5) the laminated glass substrate is torn open bonding, reach glass substrate and separate.
Before step 3, also to carry out cleaning and removing to laminated glass substrate and remove adhesive with through-hole structure.
Before step 5, adopt chemico-mechanical polishing to remove the metal that back laminated glass substrate upper surface is filled in metallization.
After step 5, adopt the method for cleaning and surfacing polishing to be thinned to desired thickness to every independent glass substrate.
Said adhesive layer material is at least a among Ni, Ta, Ti, Pt, Pd, AlN and the TiN.
Said laminated glass substrate through-hole metallization is filled the mode of filling through plating, chemical plating, physical deposition or liquid metal and is realized.A kind of as packing material among Cu, Sn, W, Ti, Pt, Pd, Ni and the Au fill adopted in metallization.
The bonding of glass substrate lamination described in the step 1 of above-mentioned two kinds of methods is realized through the polymeric material bonding method; Wherein polymeric material is a kind of among Polyimide, SU8 and the BCB, forms the laminated construction of compound glass substrate and Polyimide, SU8 or BCB.Said through hole adopts a kind of method in machining, laser processing, sandblast boring or the etching to make.The pore diameter range of through hole is 5um-500um.
In above-mentioned two kinds of methods the laminated glass substrate being torn open bonding is to adopt the chemical solution dissolve polymer to reach glass substrate to separate purpose; Perhaps use modes such as electric spark, line cutting, blade cuts that the laminated glass substrate is split.
Above-mentioned two kinds of methods can also be included in the operation of the required figure of surface making through hole of laminated glass board substrate one side before step 2.
Advantage of the present invention is: the lamination bonding of realizing the compound glass substrate; The laminated glass substrate of the method that adopts machining, laser processing, sandblast boring or etching after with bonding produced the vertical through hole structure; The mode of filling through plating, chemical plating, physical deposition, liquid metal is again accomplished the via metal filling of laminated glass substrate, once realizes the via metal filling of compound glass substrate.Can greatly shorten Production Time of glass through hole through this method, reduce production cost simultaneously largely.
Description of drawings
Fig. 1 (a)～(d) is the process chart of glass through hole instance of the present invention.Wherein,
Fig. 1 (a) is the step 1 of glass through hole manufacture method and glass through-hole interconnection manufacture method;
Fig. 1 (b) is the step 2 of glass through hole manufacture method and glass through-hole interconnection manufacture method;
Fig. 1 (c) is the step 3 of glass through hole manufacture method;
Fig. 1 (d) is the step 4 of glass through hole manufacture method.
Fig. 2 (a)～(d) is the process chart of glass through-hole interconnection instance of the present invention.Wherein,
Fig. 2 (a) is the step 4, five of glass through-hole interconnection manufacture method;
Fig. 2 (b) is the step 6 of glass through-hole interconnection manufacture method;
Fig. 2 (c) is the step 8 of glass through-hole interconnection manufacture method;
Fig. 2 (d) is the step 9 of glass through-hole interconnection manufacture method.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and see figures.1.and.2, to further explain of the present invention.
A kind of manufacture method of glass through hole, execution mode is following:
One: glass substrate is 200 um glass, and binding material is Polyimide.Adopt the hot pressing mode to be bonded together the compound glass substrate, form the laminated construction of compound glass substrate and Polyimide 2, like Fig. 1 (a);
Two: make the required figure of through hole 3 at glass substrate surface, the compound glass substrate 1 of the method that re-uses machining, laser processing, sandblast boring or etching after with bonding made vertical through hole 3 structures, like Fig. 1 (b);
Three: adopt methods such as chemistry, electric spark, line cutting or blade cuts that the laminated glass substrate is carried out cutting and separating along the Polyimide middle part, form Cutting Road 4 like Fig. 1 (c);
Four: every independent glass substrate is cleaned, so that the technology of follow-up making interconnection.Like Fig. 1 (d).
A kind of manufacture method of glass through-hole interconnection, execution mode is following:
One: glass substrate is 200 um glass, and binding material is SU8.Adopt the hot pressing mode to be bonded together the compound glass substrate, form the laminated construction of compound glass substrate and SU8 7, like Fig. 1 (a);
Two: make the required figure of through hole 3 at glass substrate surface, the compound glass substrate 1 of the method that re-uses machining, laser processing, sandblast boring or etching after with bonding made vertical through hole 3 structures, like Fig. 1 (b);
Three: use SC1 (NH
4+ H
2O
2+ H
2O) the compound glass substrate of making through hole 3 structures is cleaned, make through hole 3 surface cleanliness be more suitable for the metal deposit;
Four: at the Ti of sidewall deposit adhesion layer, like Fig. 2 (a) like 200 nm;
Five: as Seed Layer, adhesion layer that deposit is good and Seed Layer 5 are shown in Fig. 2 (a) at the Cu of surface deposition one deck 1 um of adhesion layer;
Six:, the through hole 3 of laminated glass substrate is filled up metal Cu 6, like Fig. 2 (b) through the mode of plating, chemical plating or physical deposition;
Seven: the Cu that the laminated glass substrate upper surface is unnecessary adopts chemico-mechanical polishing to remove;
Eight: adopt methods such as electric spark, line cutting or blade cuts that the laminated glass substrate is carried out cutting and separating along SU8 7 middle parts, form Cutting Road 4 like Fig. 2 (c);
Nine: adopt cleaning and surfacing finishing method to be thinned to desired thickness 200 um to every independent glass substrate, like Fig. 2 (d).
Claims (14)
1. the manufacture method of a glass through hole is characterized in that, may further comprise the steps:
1) through hot-press method a plurality of glass substrate laminations is bonded together, forms the lamination bonding structure of compound glass substrate;
2) the laminated glass substrate behind the bonding is produced the through-hole structure perpendicular to the laminated glass substrate surface;
3) the laminated glass substrate is torn open bonding, reach glass substrate and separate.
2. the manufacture method of glass through hole according to claim 1; It is characterized in that; Said glass substrate lamination bonding is realized through the polymeric material bonding method; Wherein polymeric material is a kind of among Polyimide, SU8 and the BCB, forms the laminated construction of compound glass substrate and Polyimide, SU8 or BCB.
3. the manufacture method of glass through hole according to claim 1 is characterized in that, before step 2, also is included in the operation that the surface of laminated glass board substrate one side makes the required figure of through hole.
4. the manufacture method of glass through hole according to claim 1 is characterized in that, said through hole adopts a kind of method in machining, laser processing, sandblast boring or the etching to make.
5. the manufacture method of glass through hole according to claim 1 is characterized in that the pore diameter range of said through hole is 5um-500um.
6. the manufacture method of glass through hole according to claim 1 is characterized in that, step 3 adopts the chemical solution dissolve polymer to reach glass substrate to separate purpose; Perhaps use modes such as electric spark, line cutting, blade cuts that the laminated glass substrate is split.
7. the manufacture method of glass through hole according to claim 1 is characterized in that, after the step 3, every independent glass substrate is cleaned, so that the technology of follow-up making interconnection.
8. the manufacture method of a glass through-hole interconnection is characterized in that, may further comprise the steps:
1) through hot-press method a plurality of glass substrate laminations is bonded together, forms the lamination bonding structure of compound glass substrate;
2) the laminated glass substrate behind the bonding is produced the through-hole structure perpendicular to the laminated glass substrate surface;
3) on the sidewall of said through hole, adopt physical deposition or chemical deposition to make adhesion layer;
4) with the filling of metallizing of the through hole of laminated glass substrate;
5) the laminated glass substrate is torn open bonding, reach glass substrate and separate.
9. like the manufacture method of the said glass through-hole interconnection of claim 8, it is characterized in that, before step 3, the laminated glass substrate with through-hole structure is cleaned.
10. like the manufacture method of the said glass through-hole interconnection of claim 8, it is characterized in that said adhesive layer material is at least a among Ni, Ta, Ti, Pt, Pd, AlN and the TiN.
11. the manufacture method like the said glass through-hole interconnection of claim 8 is characterized in that, said laminated glass substrate through-hole metallization is filled the mode of filling through plating, chemical plating, physical deposition or liquid metal and is realized.
12. the manufacture method like the said glass through-hole interconnection of claim 8 is characterized in that, said metallization is filled and is adopted a kind of as packing material among Cu, Sn, W, Ti, Pt, Pd, Ni and the Au.
13. the manufacture method like the said glass through-hole interconnection of claim 8 is characterized in that, before step 5, adopts chemico-mechanical polishing to remove the metal that back laminated glass substrate upper surface is filled in metallization.
14. the manufacture method like the said glass through-hole interconnection of claim 8 is characterized in that, after step 5, adopts the method for cleaning and surfacing polishing to be thinned to desired thickness to every independent glass substrate.
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247570A (en) * | 2013-05-10 | 2013-08-14 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method for silicon through holes and silicon through hole interconnection |
| CN105160337A (en) * | 2015-08-31 | 2015-12-16 | 上海箩箕技术有限公司 | Manufacturing method for glass outer cover plate |
| US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
| US9889635B2 (en) | 2012-12-13 | 2018-02-13 | Corning Incorporated | Facilitated processing for controlling bonding between sheet and carrier |
| US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
| US10046542B2 (en) | 2014-01-27 | 2018-08-14 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
| US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
| CN112340694A (en) * | 2020-11-03 | 2021-02-09 | 中国电子科技集团公司第二十九研究所 | Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip |
| US11097509B2 (en) | 2016-08-30 | 2021-08-24 | Corning Incorporated | Siloxane plasma polymers for sheet bonding |
| CN113488431A (en) * | 2021-05-24 | 2021-10-08 | 北京大学 | Preparation method of glass substrate comprising through hole with high depth-to-width ratio |
| US11167532B2 (en) | 2015-05-19 | 2021-11-09 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
| US11192340B2 (en) | 2014-04-09 | 2021-12-07 | Corning Incorporated | Device modified substrate article and methods for making |
| US11331692B2 (en) | 2017-12-15 | 2022-05-17 | Corning Incorporated | Methods for treating a substrate and method for making articles comprising bonded sheets |
| CN114686234A (en) * | 2020-12-30 | 2022-07-01 | 伯恩光学(惠州)有限公司 | Thinning agent for rear cover of glass mobile phone |
| US11535553B2 (en) | 2016-08-31 | 2022-12-27 | Corning Incorporated | Articles of controllably bonded sheets and methods for making same |
| US11905201B2 (en) | 2015-06-26 | 2024-02-20 | Corning Incorporated | Methods and articles including a sheet and a carrier |
| US11999135B2 (en) | 2017-08-18 | 2024-06-04 | Corning Incorporated | Temporary bonding using polycationic polymers |
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Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
| US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
| US9889635B2 (en) | 2012-12-13 | 2018-02-13 | Corning Incorporated | Facilitated processing for controlling bonding between sheet and carrier |
| US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
| US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
| US10538452B2 (en) | 2012-12-13 | 2020-01-21 | Corning Incorporated | Bulk annealing of glass sheets |
| CN103247570A (en) * | 2013-05-10 | 2013-08-14 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method for silicon through holes and silicon through hole interconnection |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| US11123954B2 (en) | 2014-01-27 | 2021-09-21 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
| US10046542B2 (en) | 2014-01-27 | 2018-08-14 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
| US11192340B2 (en) | 2014-04-09 | 2021-12-07 | Corning Incorporated | Device modified substrate article and methods for making |
| US11167532B2 (en) | 2015-05-19 | 2021-11-09 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
| US11660841B2 (en) | 2015-05-19 | 2023-05-30 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
| US11905201B2 (en) | 2015-06-26 | 2024-02-20 | Corning Incorporated | Methods and articles including a sheet and a carrier |
| CN105160337A (en) * | 2015-08-31 | 2015-12-16 | 上海箩箕技术有限公司 | Manufacturing method for glass outer cover plate |
| US11097509B2 (en) | 2016-08-30 | 2021-08-24 | Corning Incorporated | Siloxane plasma polymers for sheet bonding |
| US11535553B2 (en) | 2016-08-31 | 2022-12-27 | Corning Incorporated | Articles of controllably bonded sheets and methods for making same |
| US11999135B2 (en) | 2017-08-18 | 2024-06-04 | Corning Incorporated | Temporary bonding using polycationic polymers |
| US11331692B2 (en) | 2017-12-15 | 2022-05-17 | Corning Incorporated | Methods for treating a substrate and method for making articles comprising bonded sheets |
| CN112340694A (en) * | 2020-11-03 | 2021-02-09 | 中国电子科技集团公司第二十九研究所 | Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip |
| CN112340694B (en) * | 2020-11-03 | 2023-05-12 | 中国电子科技集团公司第二十九研究所 | Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip |
| CN114686234A (en) * | 2020-12-30 | 2022-07-01 | 伯恩光学(惠州)有限公司 | Thinning agent for rear cover of glass mobile phone |
| CN113488431A (en) * | 2021-05-24 | 2021-10-08 | 北京大学 | Preparation method of glass substrate comprising through hole with high depth-to-width ratio |
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