SG11201602431SA - Sputtering target and production method - Google Patents

Sputtering target and production method

Info

Publication number
SG11201602431SA
SG11201602431SA SG11201602431SA SG11201602431SA SG11201602431SA SG 11201602431S A SG11201602431S A SG 11201602431SA SG 11201602431S A SG11201602431S A SG 11201602431SA SG 11201602431S A SG11201602431S A SG 11201602431SA SG 11201602431S A SG11201602431S A SG 11201602431SA
Authority
SG
Singapore
Prior art keywords
production method
sputtering target
sputtering
target
production
Prior art date
Application number
SG11201602431SA
Other languages
English (en)
Inventor
Nikolaus Reinfried
Michael Schober
Wolfram Knabl
Jörg Winkler
Original Assignee
Plansee Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plansee Se filed Critical Plansee Se
Publication of SG11201602431SA publication Critical patent/SG11201602431SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/16—Both compacting and sintering in successive or repeated steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/17—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by forging
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/18—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by using pressure rollers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/20—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by extruding
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2201/00—Treatment under specific atmosphere
    • B22F2201/01—Reducing atmosphere
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2201/00—Treatment under specific atmosphere
    • B22F2201/10—Inert gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2201/00—Treatment under specific atmosphere
    • B22F2201/20—Use of vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/20—Refractory metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
SG11201602431SA 2013-10-29 2014-10-27 Sputtering target and production method SG11201602431SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ATGM354/2013U AT13602U3 (de) 2013-10-29 2013-10-29 Sputtering Target und Verfahren zur Herstellung
PCT/AT2014/000195 WO2015061816A1 (de) 2013-10-29 2014-10-27 Sputtering target und verfahren zur herstellung

Publications (1)

Publication Number Publication Date
SG11201602431SA true SG11201602431SA (en) 2016-04-28

Family

ID=50441206

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201602431SA SG11201602431SA (en) 2013-10-29 2014-10-27 Sputtering target and production method

Country Status (8)

Country Link
US (1) US20160254128A1 (zh)
JP (1) JP6479788B2 (zh)
CN (1) CN105683407B (zh)
AT (1) AT13602U3 (zh)
DE (1) DE112014004949A5 (zh)
SG (1) SG11201602431SA (zh)
TW (1) TWI654315B (zh)
WO (1) WO2015061816A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT15356U1 (de) * 2016-09-29 2017-07-15 Plansee Se Sputtering Target
JP7110749B2 (ja) * 2017-07-05 2022-08-02 日立金属株式会社 ＭｏＮｂターゲット材
CN107916405B (zh) * 2017-11-23 2019-10-15 洛阳高新四丰电子材料有限公司 一种平面显示器用钼钽合金溅射靶材的制备方法
CN111230096A (zh) * 2020-03-23 2020-06-05 宁波江丰电子材料股份有限公司 一种合金溅射靶材及其制备方法和用途
CN111471970A (zh) * 2020-04-24 2020-07-31 金堆城钼业股份有限公司 一种低氧钼铌合金靶材及其制备方法
CN111590071B (zh) * 2020-06-03 2022-04-12 福建阿石创新材料股份有限公司 一种钼铌合金靶材及其制备方法
BE1028482B1 (nl) * 2020-07-14 2022-02-14 Soleras Advanced Coatings Bv Vervaardiging en hervullen van sputterdoelen
CN114150279A (zh) * 2021-12-09 2022-03-08 株洲硬质合金集团有限公司 一种钼铌合金轧制靶材的热处理方法
CN115446313A (zh) * 2022-09-28 2022-12-09 新加坡先进薄膜材料私人有限公司 一种铬铂合金靶材的制作方法、装置、设备及其存储介质

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2678272A (en) 1951-10-06 1954-05-11 Climax Molybdenum Co Molybdenum-columbium alloys
US2850385A (en) * 1955-08-29 1958-09-02 Universal Cyclops Steel Corp Molybdenum-base alloy
US2960403A (en) * 1958-02-24 1960-11-15 American Metal Climax Inc Molybdenum-base alloys
US3471396A (en) * 1967-04-10 1969-10-07 Ibm R.f. cathodic sputtering apparatus having an electrically conductive housing
US3438885A (en) * 1967-08-02 1969-04-15 Northern Electric Co Method of making ferrimagnetic films by cathodic sputtering
JPS63241164A (ja) 1987-03-30 1988-10-06 Toshiba Corp スパッタリングターゲットおよび電気配線用合金膜
JPH06220566A (ja) * 1993-01-21 1994-08-09 Sumitomo Metal Ind Ltd 異方性の小さいモリブデン基合金と製造方法
US6128057A (en) * 1996-03-08 2000-10-03 Canon Kabushiki Kaisha LCD with masking member having multiple portions having different characteristics
JP4432015B2 (ja) * 2001-04-26 2010-03-17 日立金属株式会社 薄膜配線形成用スパッタリングターゲット
MXPA05011284A (es) * 2003-04-23 2006-01-24 Starck H C Inc Blancos de rayos x de alecion de molibdeno que tienen estructura de grano uniforme.
JP4110533B2 (ja) * 2004-02-27 2008-07-02 日立金属株式会社 Ｍｏ系ターゲット材の製造方法
JP4356071B2 (ja) 2004-03-31 2009-11-04 日立金属株式会社 スパッタリングターゲット材およびその製造方法
JP4721090B2 (ja) 2004-04-16 2011-07-13 日立金属株式会社 Ｍｏ系ターゲット材の製造方法
US20060042728A1 (en) 2004-08-31 2006-03-02 Brad Lemon Molybdenum sputtering targets
JP2006169547A (ja) * 2004-12-13 2006-06-29 Hitachi Metals Ltd 加圧焼結用のＭｏ合金粉末の製造方法およびスパッタリング用ターゲット材の製造方法
DE102005003445B4 (de) * 2005-01-21 2009-06-04 H.C. Starck Hermsdorf Gmbh Metallsubstrat-Werkstoff für die Anodenteller von Drehanodenröntgenröhren, Verfahren zur Herstellung eines solchen Werkstoffes sowie Verfahren zur Herstellung eines Anodentellers unter Verwendung eines solchen Werkstoffes
JP4492877B2 (ja) * 2005-09-27 2010-06-30 日本新金属株式会社 スパッタリングターゲット用原料粉末として用いられる高純度モリブデン−タングステン合金粉末の製造方法
AT8697U1 (de) * 2005-10-14 2006-11-15 Plansee Se Rohrtarget
US20100108501A1 (en) * 2007-01-12 2010-05-06 Nippon Steel Materials Co., Ltd Mo-based sputtering target plate and method for manufacturing the same
JP4894008B2 (ja) 2007-05-09 2012-03-07 日立金属株式会社 ＭｏＮｂ系焼結スパッタリングターゲット材の製造方法
JP5546880B2 (ja) * 2009-03-25 2014-07-09 山陽特殊製鋼株式会社 モリブデン合金
US8449818B2 (en) * 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
JP2013083000A (ja) 2011-09-28 2013-05-09 Hitachi Metals Ltd 焼結Ｍｏ合金スパッタリングターゲット材の製造方法

Also Published As

Publication number Publication date
WO2015061816A1 (de) 2015-05-07
TWI654315B (zh) 2019-03-21
WO2015061816A9 (de) 2015-07-02
AT13602U2 (de) 2014-04-15
JP6479788B2 (ja) 2019-03-06
JP2017502166A (ja) 2017-01-19
TW201516160A (zh) 2015-05-01
AT13602U3 (de) 2014-08-15
CN105683407A (zh) 2016-06-15
DE112014004949A5 (de) 2016-07-14
CN105683407B (zh) 2019-01-15
US20160254128A1 (en) 2016-09-01

Similar Documents

Publication Publication Date Title
IL285412B (en) The purpose of the thesis and the thesis cell
SG11201602431SA (en) Sputtering target and production method
SG11201600843XA (en) Magnetic material sputtering target and method for producing same
SG11201505306PA (en) Tantalum sputtering target and production method therefor
SG11201506426TA (en) FePt-C-BASED SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME
EP3034998A4 (en) Target positioning method and system
EP3173716A4 (en) Refrigerator and manufacturing method therefor
EP2960355A4 (en) Sputtering target and production method therefor
TWI560298B (en) Sputtering target and manufacturing method of the sputtering target
EP2907891A4 (en) SINTERED TUNGSTEN BODY SPRAY TARGET AND MANUFACTURING METHOD THEREOF
EP2980268A4 (en) CYLINDER SPUTTER TARGET AND METHOD FOR THE PRODUCTION THEREOF
EP2818574A4 (en) SPRAY TARGET AND METHOD FOR PRODUCING THE SAME
EP2975156A4 (en) SINTER BODY WITH A LICOO2 SPUTTER TARGET AND MANUFACTURING PROCESS FOR THE SINTER BODY WITH LICOO2
SG11201403857TA (en) Co-Cr-Pt-BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
SG11201608581XA (en) Sputtering target and process for production thereof
IL237919B (en) Tantalum sputtering target and method for producing same
EP3018234A4 (en) Sputtering target and method for manufacturing same
EP2960338A4 (en) SUGAR SOLUTION PROCESS
EP2857547A4 (en) SPRAY TARGET FOR RARE EARTH MAGNET AND PRODUCTION METHOD THEREFOR
SG11201506950WA (en) Cobalt sputtering target and production method therefor
EP3050999A4 (en) Sputtering target and sputtering target manufacturing method
EP3015742A4 (en) Rack and rack manufacturing method
EP2995702A4 (en) Zinc production method
SG11201501370PA (en) Tantalum sputtering target and method for producing same
SG11201501365WA (en) Sputtering target