SG11201600843XA - Magnetic material sputtering target and method for producing same - Google Patents

Magnetic material sputtering target and method for producing same

Info

Publication number
SG11201600843XA
SG11201600843XA SG11201600843XA SG11201600843XA SG11201600843XA SG 11201600843X A SG11201600843X A SG 11201600843XA SG 11201600843X A SG11201600843X A SG 11201600843XA SG 11201600843X A SG11201600843X A SG 11201600843XA SG 11201600843X A SG11201600843X A SG 11201600843XA
Authority
SG
Singapore
Prior art keywords
magnetic material
sputtering target
producing same
material sputtering
producing
Prior art date
Application number
SG11201600843XA
Other languages
English (en)
Inventor
Atsutoshi Arakawa
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201600843XA publication Critical patent/SG11201600843XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0433—Nickel- or cobalt-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C2200/00—Crystalline structure
    • C22C2200/02—Amorphous
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C30/00—Alloys containing less than 50% by weight of each constituent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
SG11201600843XA 2013-11-28 2014-11-20 Magnetic material sputtering target and method for producing same SG11201600843XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013246400 2013-11-28
PCT/JP2014/080708 WO2015080009A1 (ja) 2013-11-28 2014-11-20 磁性材スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201600843XA true SG11201600843XA (en) 2016-03-30

Family

ID=53198953

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201600843XA SG11201600843XA (en) 2013-11-28 2014-11-20 Magnetic material sputtering target and method for producing same

Country Status (7)

Country Link
US (1) US10724134B2 (ko)
EP (1) EP3015566B1 (ko)
JP (1) JP6037415B2 (ko)
KR (2) KR20160075723A (ko)
SG (1) SG11201600843XA (ko)
TW (1) TWI637798B (ko)
WO (1) WO2015080009A1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201507167UA (en) * 2015-09-07 2017-04-27 Heraeus Materials Singapore Pte Ltd Co-Based Alloy Sputtering Target Having Boride and Method For Producing The Same
WO2017047754A1 (ja) * 2015-09-18 2017-03-23 山陽特殊製鋼株式会社 スパッタリングターゲット材
JP6660130B2 (ja) * 2015-09-18 2020-03-04 山陽特殊製鋼株式会社 ＣｏＦｅＢ系合金ターゲット材
JP2017057490A (ja) * 2015-09-18 2017-03-23 山陽特殊製鋼株式会社 Ｃｏ−Ｆｅ−Ｂ系合金ターゲット材
CN108699677B (zh) 2016-02-19 2020-12-04 捷客斯金属株式会社 磁记录介质用溅射靶以及磁性薄膜
US20200234730A1 (en) * 2018-03-27 2020-07-23 Jx Nippon Mining & Metals Corporation Sputtering target and method for producing same, and method for producing magnetic recording medium
WO2020166380A1 (ja) * 2019-02-13 2020-08-20 三井金属鉱業株式会社 スパッタリングターゲット材
JP7382142B2 (ja) * 2019-02-26 2023-11-16 山陽特殊製鋼株式会社 スパッタリングターゲット材に適した合金
WO2020188987A1 (ja) 2019-03-20 2020-09-24 Ｊｘ金属株式会社 スパッタリングターゲット及び、スパッタリングターゲットの製造方法
JP2021109980A (ja) 2020-01-06 2021-08-02 山陽特殊製鋼株式会社 スパッタリングターゲット材の製造方法
JP7492831B2 (ja) * 2020-01-06 2024-05-30 山陽特殊製鋼株式会社 スパッタリングターゲット材
JP2021127490A (ja) 2020-02-13 2021-09-02 山陽特殊製鋼株式会社 スパッタリングターゲット材及びその製造方法
CN112371987A (zh) * 2020-11-13 2021-02-19 河南东微电子材料有限公司 一种铁钴硼铬铝合金粉末的制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141208B2 (en) * 2003-04-30 2006-11-28 Hitachi Metals, Ltd. Fe-Co-B alloy target and its production method, and soft magnetic film produced by using such target, and magnetic recording medium and TMR device
JP4016399B2 (ja) 2003-04-30 2007-12-05 日立金属株式会社 Ｆｅ−Ｃｏ−Ｂ合金ターゲット材の製造方法
JP3964453B2 (ja) 2004-03-26 2007-08-22 日鉱金属株式会社 Ｃｏ−Ｃｒ−Ｐｔ−Ｂ系合金スパッタリングターゲット
WO2007080781A1 (ja) 2006-01-13 2007-07-19 Nippon Mining & Metals Co., Ltd. 非磁性材粒子分散型強磁性材スパッタリングターゲット
JP4963037B2 (ja) 2006-05-01 2012-06-27 株式会社アルバック スパッタリング用コバルトターゲット及びその製造方法
JP2008121071A (ja) 2006-11-13 2008-05-29 Sanyo Special Steel Co Ltd 軟磁性ＦｅＣｏ系ターゲット材
JP4970003B2 (ja) * 2006-11-17 2012-07-04 山陽特殊製鋼株式会社 Ｃｏ−Ｂ系ターゲット材およびその製造方法
MY145087A (en) 2008-03-28 2011-12-30 Jx Nippon Mining & Metals Corp Sputtering target of nonmagnetic-particle-dispersed ferromagnetic material
EP2511397B1 (en) * 2009-12-11 2018-09-26 JX Nippon Mining & Metals Corporation Magnetic material sputtering target
MY158512A (en) * 2010-12-09 2016-10-14 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target
SG189257A1 (en) 2010-12-17 2013-05-31 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film and method for producing same
WO2013001943A1 (ja) * 2011-06-30 2013-01-03 Jx日鉱日石金属株式会社 Ｃｏ－Ｃｒ－Ｐｔ－Ｂ系合金スパッタリングターゲット及びその製造方法
SG193277A1 (en) * 2011-08-23 2013-10-30 Jx Nippon Mining & Metals Corp Ferromagnetic sputtering target with minimized particle generation
WO2013125469A1 (ja) 2012-02-22 2013-08-29 Jx日鉱日石金属株式会社 磁性材スパッタリングターゲット及びその製造方法
MY174585A (en) 2012-03-09 2020-04-28 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording medium, and process for producing same
WO2014034390A1 (ja) 2012-08-31 2014-03-06 Jx日鉱日石金属株式会社 Ｆｅ系磁性材焼結体
MY169260A (en) 2012-09-21 2019-03-20 Jx Nippon Mining & Metals Corp Fe-pt-based magnetic materials sintered compact

Also Published As

Publication number Publication date
KR20180088491A (ko) 2018-08-03
JP6037415B2 (ja) 2016-12-07
EP3015566A4 (en) 2017-03-22
JPWO2015080009A1 (ja) 2017-03-16
WO2015080009A1 (ja) 2015-06-04
TW201532710A (zh) 2015-09-01
US10724134B2 (en) 2020-07-28
US20160237552A1 (en) 2016-08-18
EP3015566A1 (en) 2016-05-04
KR20160075723A (ko) 2016-06-29
TWI637798B (zh) 2018-10-11
EP3015566B1 (en) 2021-09-15

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