SG11201600043RA - Method for bonding of contact surfaces - Google Patents
Method for bonding of contact surfacesInfo
- Publication number
- SG11201600043RA SG11201600043RA SG11201600043RA SG11201600043RA SG11201600043RA SG 11201600043R A SG11201600043R A SG 11201600043RA SG 11201600043R A SG11201600043R A SG 11201600043RA SG 11201600043R A SG11201600043R A SG 11201600043RA SG 11201600043R A SG11201600043R A SG 11201600043RA
- Authority
- SG
- Singapore
- Prior art keywords
- bonding
- contact surfaces
- contact
- Prior art date
Links
Classifications
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
- H01L2224/83011—Chemical cleaning, e.g. etching, flux
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
- H01L2224/83012—Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
- H01L2224/83013—Plasma cleaning
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83026—Applying a precursor material to the bonding area
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- H—ELECTRICITY
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
- H01L2224/8383—Solid-solid interdiffusion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
- H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Manufacture Of Switches (AREA)
- Micromachines (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/EP2013/064239 WO2015000527A1 (de) | 2013-07-05 | 2013-07-05 | Verfahren zum bonden von metallischen kontaktflächen unter lösen einer auf einer der kontaktflächen aufgebrachten opferschicht in mindestens einer der kontaktflächen |
Publications (1)
Publication Number | Publication Date |
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SG11201600043RA true SG11201600043RA (en) | 2016-02-26 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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SG11201600043RA SG11201600043RA (en) | 2013-07-05 | 2013-07-05 | Method for bonding of contact surfaces |
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US (1) | US9640510B2 (de) |
EP (2) | EP2994935A1 (de) |
JP (1) | JP6282342B2 (de) |
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CN (2) | CN105340070B (de) |
SG (1) | SG11201600043RA (de) |
TW (4) | TWI775080B (de) |
WO (1) | WO2015000527A1 (de) |
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KR102306977B1 (ko) | 2014-06-24 | 2021-09-30 | 에베 그룹 에. 탈너 게엠베하 | 기판의 표면 처리를 위한 방법 및 장치 |
DE112014007212A5 (de) | 2014-12-23 | 2017-08-24 | Ev Group E. Thallner Gmbh | Verfahren und Vorrichtung zur Vorfixierung von Substraten |
US20170330855A1 (en) * | 2016-05-13 | 2017-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and Method for Immersion Bonding |
US10037975B2 (en) | 2016-08-31 | 2018-07-31 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and a method of manufacturing the same |
EP3586356B1 (de) | 2017-02-21 | 2023-11-08 | EV Group E. Thallner GmbH | Verfahren zum bonden von substraten |
CN108324201B (zh) * | 2018-05-08 | 2023-11-17 | 杨勇 | 拖把 |
KR20210021626A (ko) | 2019-08-19 | 2021-03-02 | 삼성전자주식회사 | 반도체 장치 |
WO2021127527A1 (en) * | 2019-12-20 | 2021-06-24 | Ohio State Innovation Foundation | Method of forming an impact weld |
CN112897454B (zh) * | 2021-01-20 | 2024-02-23 | 杭州士兰集成电路有限公司 | Mems器件及其制造方法 |
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JPS6130059A (ja) * | 1984-07-20 | 1986-02-12 | Nec Corp | 半導体装置の製造方法 |
JP2671419B2 (ja) | 1988-08-09 | 1997-10-29 | 株式会社日本自動車部品総合研究所 | 半導体装置の製造方法 |
US5603779A (en) * | 1995-05-17 | 1997-02-18 | Harris Corporation | Bonded wafer and method of fabrication thereof |
JP3532788B2 (ja) | 1999-04-13 | 2004-05-31 | 唯知 須賀 | 半導体装置及びその製造方法 |
US7320928B2 (en) * | 2003-06-20 | 2008-01-22 | Intel Corporation | Method of forming a stacked device filler |
US20050003652A1 (en) | 2003-07-02 | 2005-01-06 | Shriram Ramanathan | Method and apparatus for low temperature copper to copper bonding |
FR2857953B1 (fr) * | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
DE102004015017B4 (de) * | 2004-03-26 | 2006-11-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflächen zweier Substrate |
US7261793B2 (en) * | 2004-08-13 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | System and method for low temperature plasma-enhanced bonding |
KR100560721B1 (ko) * | 2004-08-23 | 2006-03-13 | 삼성전자주식회사 | 금속 챔버층을 구비하는 잉크젯 헤드의 제조방법 및 그에의하여 제조된 잉크젯 헤드 |
US8283208B2 (en) * | 2004-12-28 | 2012-10-09 | Mitsumasa Koyanagi | Method and apparatus for fabricating integrated circuit device using self-organizing function |
US7601271B2 (en) | 2005-11-28 | 2009-10-13 | S.O.I.Tec Silicon On Insulator Technologies | Process and equipment for bonding by molecular adhesion |
US7598153B2 (en) * | 2006-03-31 | 2009-10-06 | Silicon Genesis Corporation | Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species |
DE102006031405B4 (de) | 2006-07-05 | 2019-10-17 | Infineon Technologies Ag | Halbleitermodul mit Schaltfunktionen und Verfahren zur Herstellung desselben |
KR100748723B1 (ko) * | 2006-07-10 | 2007-08-13 | 삼성전자주식회사 | 기판 접합 방법 |
JP2008166529A (ja) | 2006-12-28 | 2008-07-17 | Spansion Llc | 半導体装置の製造方法 |
CN102292835B (zh) * | 2009-01-23 | 2015-03-25 | 日亚化学工业株式会社 | 半导体装置及其制造方法 |
DE102009050426B3 (de) | 2009-10-22 | 2011-03-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum ausgerichteten Aufbringen von Bauteilen auf einem Trägersubstrat und ein Verfahren zur Herstellung eines Trägersubstrats dafür und ein Verfahren zur Bestückung eines Zielsubstrats damit. |
JP5732652B2 (ja) * | 2009-11-04 | 2015-06-10 | ボンドテック株式会社 | 接合システムおよび接合方法 |
EP2372755B1 (de) | 2010-03-31 | 2013-03-20 | EV Group E. Thallner GmbH | Verfahren zum permanenten Verbinden zweier Metalloberflächen |
CN102665997A (zh) | 2010-05-31 | 2012-09-12 | 三洋电机株式会社 | 金属接合方法 |
FR2966283B1 (fr) * | 2010-10-14 | 2012-11-30 | Soi Tec Silicon On Insulator Tech Sa | Procede pour realiser une structure de collage |
TWI458072B (zh) * | 2010-12-16 | 2014-10-21 | Soitec Silicon On Insulator | 將半導體構造直接黏附在一起之方法以及應用此等方法所形成之黏附半導體構造 |
KR101705937B1 (ko) * | 2011-01-25 | 2017-02-10 | 에베 그룹 에. 탈너 게엠베하 | 웨이퍼들의 영구적 결합을 위한 방법 |
WO2012133760A1 (ja) * | 2011-03-30 | 2012-10-04 | ボンドテック株式会社 | 電子部品実装方法、電子部品実装システムおよび基板 |
CN103460343B (zh) | 2011-04-08 | 2016-04-13 | Ev集团E·索尔纳有限责任公司 | 晶片的永久粘合方法 |
US10163681B2 (en) | 2011-08-30 | 2018-12-25 | Ev Group E. Thallner Gmbh | Method for permanently bonding wafers by a connecting layer by means of solid state diffusion or phase transformation |
US8431436B1 (en) | 2011-11-03 | 2013-04-30 | International Business Machines Corporation | Three-dimensional (3D) integrated circuit with enhanced copper-to-copper bonding |
FR2983845A1 (fr) * | 2012-05-25 | 2013-06-14 | Commissariat Energie Atomique | Procede de realisation d'une microstructure comportant deux substrats relies mecaniquement |
JP2013251405A (ja) * | 2012-05-31 | 2013-12-12 | Tadatomo Suga | 金属領域を有する基板の接合方法 |
JP6290222B2 (ja) | 2012-09-28 | 2018-03-07 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板をコーティングする方法及び基板を接合する方法 |
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TW201921519A (zh) | 2019-06-01 |
TWI645476B (zh) | 2018-12-21 |
WO2015000527A1 (de) | 2015-01-08 |
CN105340070A (zh) | 2016-02-17 |
KR20200071150A (ko) | 2020-06-18 |
KR102158960B1 (ko) | 2020-09-23 |
CN110310896B (zh) | 2023-08-15 |
JP2016524335A (ja) | 2016-08-12 |
JP6282342B2 (ja) | 2018-02-21 |
TWI826971B (zh) | 2023-12-21 |
TW202236441A (zh) | 2022-09-16 |
TWI775080B (zh) | 2022-08-21 |
EP3301706A1 (de) | 2018-04-04 |
TW202034409A (zh) | 2020-09-16 |
CN105340070B (zh) | 2019-08-16 |
EP2994935A1 (de) | 2016-03-16 |
US9640510B2 (en) | 2017-05-02 |
CN110310896A (zh) | 2019-10-08 |
KR102124233B1 (ko) | 2020-06-18 |
TW201513234A (zh) | 2015-04-01 |
US20160071817A1 (en) | 2016-03-10 |
KR20160030164A (ko) | 2016-03-16 |
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