SG11201510759WA - Silicon nitride powder for mold release agent of casting mold for casting polycrystalline silicon ingot and method for manufacturing said silicon nitride powder, slurry containing said silicon nitride powder, casting mold for casting polycrystalline silicon ingot and method for manufacturing same, and method for manufacturing polycrystalline silicon ingot using said casting mold - Google Patents

Silicon nitride powder for mold release agent of casting mold for casting polycrystalline silicon ingot and method for manufacturing said silicon nitride powder, slurry containing said silicon nitride powder, casting mold for casting polycrystalline silicon ingot and method for manufacturing same, and method for manufacturing polycrystalline silicon ingot using said casting mold

Info

Publication number
SG11201510759WA
SG11201510759WA SG11201510759WA SG11201510759WA SG11201510759WA SG 11201510759W A SG11201510759W A SG 11201510759WA SG 11201510759W A SG11201510759W A SG 11201510759WA SG 11201510759W A SG11201510759W A SG 11201510759WA SG 11201510759W A SG11201510759W A SG 11201510759WA
Authority
SG
Singapore
Prior art keywords
casting
nitride powder
manufacturing
silicon nitride
polycrystalline silicon
Prior art date
Application number
SG11201510759WA
Other languages
English (en)
Inventor
Takeshi Yamao
Michio Honda
Shinsuke Jida
Takayuki Fujii
Original Assignee
Ube Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries filed Critical Ube Industries
Publication of SG11201510759WA publication Critical patent/SG11201510759WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0406—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being air
    • B05D3/0413—Heating with air
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0687—After-treatment, e.g. grinding, purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Ceramic Products (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Mold Materials And Core Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11201510759WA 2013-07-11 2014-07-09 Silicon nitride powder for mold release agent of casting mold for casting polycrystalline silicon ingot and method for manufacturing said silicon nitride powder, slurry containing said silicon nitride powder, casting mold for casting polycrystalline silicon ingot and method for manufacturing same, and method for manufacturing polycrystalline silicon ingot using said casting mold SG11201510759WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013145638 2013-07-11
PCT/JP2014/068324 WO2015005390A1 (ja) 2013-07-11 2014-07-09 多結晶シリコンインゴット鋳造用鋳型の離型剤用窒化珪素粉末およびその製造法、その窒化珪素粉末を含有したスラリー、多結晶シリコンインゴット鋳造用鋳型およびその製造方法、ならびにその鋳型を用いた多結晶シリコンインゴット鋳の製造方法

Publications (1)

Publication Number Publication Date
SG11201510759WA true SG11201510759WA (en) 2016-02-26

Family

ID=52280068

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201510759WA SG11201510759WA (en) 2013-07-11 2014-07-09 Silicon nitride powder for mold release agent of casting mold for casting polycrystalline silicon ingot and method for manufacturing said silicon nitride powder, slurry containing said silicon nitride powder, casting mold for casting polycrystalline silicon ingot and method for manufacturing same, and method for manufacturing polycrystalline silicon ingot using said casting mold

Country Status (7)

Country Link
US (1) US20160159648A1 (zh)
EP (1) EP3020686A4 (zh)
JP (1) JP5975176B2 (zh)
CN (1) CN105377756B (zh)
SG (1) SG11201510759WA (zh)
TW (1) TWI624429B (zh)
WO (1) WO2015005390A1 (zh)

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WO2018110560A1 (ja) * 2016-12-12 2018-06-21 宇部興産株式会社 窒化ケイ素粉末、多結晶シリコンインゴット用離型剤及び多結晶シリコンインゴットの製造方法
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JP6946791B2 (ja) * 2017-07-07 2021-10-06 トヨタ自動車株式会社 硫化物固体電解質微粒子の製造方法
WO2020090832A1 (ja) * 2018-11-01 2020-05-07 宇部興産株式会社 窒化ケイ素基板の製造方法および窒化ケイ素基板
CN109550623B (zh) * 2018-12-29 2021-01-22 中材江苏太阳能新材料有限公司 一种提高多晶硅铸锭用坩埚内表面粗糙度的方法
EP3950582B1 (en) * 2019-03-29 2023-12-13 Denka Company Limited Silicon nitride powder and production method therefor, and production method for silicon nitride sintered body
CN110408992A (zh) * 2019-09-11 2019-11-05 江苏美科硅能源有限公司 一种位错密度低、优质晶粒占比高的全融高效多晶硅锭制备方法
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CN112935201A (zh) * 2021-01-27 2021-06-11 广西南宁市高创机械技术有限公司 一种铸造模具内表面易脱模处理方法
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WO2023176893A1 (ja) * 2022-03-18 2023-09-21 Ｕｂｅ株式会社 窒化ケイ素粉末、および窒化ケイ素質焼結体の製造方法

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CN103269975B (zh) * 2010-12-28 2015-06-10 宇部兴产株式会社 多晶硅铸锭铸造用铸模及其制造方法、以及多晶硅铸锭铸造用铸模的脱模材料用氮化硅粉末及含有该粉末的浆料
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Also Published As

Publication number Publication date
EP3020686A1 (en) 2016-05-18
WO2015005390A1 (ja) 2015-01-15
EP3020686A4 (en) 2017-03-29
JPWO2015005390A1 (ja) 2017-03-02
CN105377756A (zh) 2016-03-02
JP5975176B2 (ja) 2016-08-23
CN105377756B (zh) 2017-03-15
TW201512080A (zh) 2015-04-01
TWI624429B (zh) 2018-05-21
US20160159648A1 (en) 2016-06-09

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