SG11201506877VA - Apparatuses and method for over-voltage event protection - Google Patents

Apparatuses and method for over-voltage event protection

Info

Publication number
SG11201506877VA
SG11201506877VA SG11201506877VA SG11201506877VA SG11201506877VA SG 11201506877V A SG11201506877V A SG 11201506877VA SG 11201506877V A SG11201506877V A SG 11201506877VA SG 11201506877V A SG11201506877V A SG 11201506877VA SG 11201506877V A SG11201506877V A SG 11201506877VA
Authority
SG
Singapore
Prior art keywords
apparatuses
over
voltage event
event protection
protection
Prior art date
Application number
SG11201506877VA
Other languages
English (en)
Inventor
James Davis
Michael Chaine
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11201506877VA publication Critical patent/SG11201506877VA/en

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
SG11201506877VA 2013-03-12 2014-02-27 Apparatuses and method for over-voltage event protection SG11201506877VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/795,425 US9281682B2 (en) 2013-03-12 2013-03-12 Apparatuses and method for over-voltage event protection
PCT/US2014/019025 WO2014163935A1 (en) 2013-03-12 2014-02-27 Apparatuses and method for over-voltage event protection

Publications (1)

Publication Number Publication Date
SG11201506877VA true SG11201506877VA (en) 2015-09-29

Family

ID=51526086

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201506877VA SG11201506877VA (en) 2013-03-12 2014-02-27 Apparatuses and method for over-voltage event protection

Country Status (7)

Country Link
US (4) US9281682B2 (ja)
EP (1) EP2973568A4 (ja)
JP (1) JP6159007B2 (ja)
KR (1) KR101890981B1 (ja)
CN (1) CN105051821B (ja)
SG (1) SG11201506877VA (ja)
WO (1) WO2014163935A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9281682B2 (en) 2013-03-12 2016-03-08 Micron Technology, Inc. Apparatuses and method for over-voltage event protection
US20180083441A1 (en) * 2016-09-20 2018-03-22 Globalfoundries Inc. Method, apparatus, and system for a semiconductor device having novel electrostatic discharge (esd) protection scheme and circuit
US11004849B2 (en) 2019-03-06 2021-05-11 Analog Devices, Inc. Distributed electrical overstress protection for large density and high data rate communication applications
US11398468B2 (en) * 2019-12-12 2022-07-26 Micron Technology, Inc. Apparatus with voltage protection mechanism
US11595036B2 (en) * 2020-04-30 2023-02-28 Analog Devices, Inc. FinFET thyristors for protecting high-speed communication interfaces

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* Cited by examiner, † Cited by third party
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JP2958202B2 (ja) * 1992-12-01 1999-10-06 シャープ株式会社 半導体装置
US5420061A (en) * 1993-08-13 1995-05-30 Micron Semiconductor, Inc. Method for improving latchup immunity in a dual-polysilicon gate process
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US5754380A (en) * 1995-04-06 1998-05-19 Industrial Technology Research Institute CMOS output buffer with enhanced high ESD protection capability
US5572394A (en) 1995-04-06 1996-11-05 Industrial Technology Research Institute CMOS on-chip four-LVTSCR ESD protection scheme
US5576557A (en) 1995-04-14 1996-11-19 United Microelectronics Corp. Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits
US6016002A (en) * 1996-12-20 2000-01-18 Texas Instruments Incorporated Stacked silicon-controlled rectifier having a low voltage trigger and adjustable holding voltage for ESD protection
US6118323A (en) * 1997-01-10 2000-09-12 Texas Instruments Incorporated Electrostatic discharge protection circuit and method
US6061218A (en) * 1997-10-03 2000-05-09 Motorola, Inc. Overvoltage protection device and method for increasing shunt current
US6268992B1 (en) * 1999-04-15 2001-07-31 Taiwan Semiconductor Manufacturing Company Displacement current trigger SCR
US6825504B2 (en) * 1999-05-03 2004-11-30 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
TW521419B (en) * 1999-11-29 2003-02-21 Winbond Electronics Corp Electrostatic discharge protection circuit
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US6628488B2 (en) * 2001-06-06 2003-09-30 Macronix International Co., Ltd. Electrostatic discharge protection circuit
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JP4008744B2 (ja) * 2002-04-19 2007-11-14 株式会社東芝 半導体装置
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
US20040100745A1 (en) * 2002-11-21 2004-05-27 Industrial Technology Research Institute Silicon-controlled rectifier with dynamic holding voltage for on-chip electrostatic discharge protection
US6963112B2 (en) * 2004-01-09 2005-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Electrostatic discharge protection circuit with a diode string
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US7800128B2 (en) * 2008-06-12 2010-09-21 Infineon Technologies Ag Semiconductor ESD device and method of making same
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US8693148B2 (en) * 2009-01-08 2014-04-08 Micron Technology, Inc. Over-limit electrical condition protection circuits for integrated circuits
JP5540801B2 (ja) * 2010-03-19 2014-07-02 富士通セミコンダクター株式会社 Ｅｓｄ保護回路及び半導体装置
US8456785B2 (en) * 2010-10-25 2013-06-04 Infineon Technologies Ag Semiconductor ESD device and method
US8841732B2 (en) * 2011-08-03 2014-09-23 GlobalFoundries, Inc. Self-adjusting latch-up resistance for CMOS devices
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US8724268B2 (en) * 2011-08-30 2014-05-13 Micron Technology, Inc. Over-limit electrical condition protection circuits and methods
US9281682B2 (en) 2013-03-12 2016-03-08 Micron Technology, Inc. Apparatuses and method for over-voltage event protection

Also Published As

Publication number Publication date
US9281682B2 (en) 2016-03-08
US10193334B2 (en) 2019-01-29
JP2016516300A (ja) 2016-06-02
EP2973568A4 (en) 2016-07-06
EP2973568A1 (en) 2016-01-20
US20190148934A1 (en) 2019-05-16
KR101890981B1 (ko) 2018-08-22
WO2014163935A1 (en) 2014-10-09
KR20150122802A (ko) 2015-11-02
CN105051821A (zh) 2015-11-11
US20160172847A1 (en) 2016-06-16
CN105051821B (zh) 2019-03-01
JP6159007B2 (ja) 2017-07-05
US11901727B2 (en) 2024-02-13
US20220069572A1 (en) 2022-03-03
US20140268438A1 (en) 2014-09-18
US11183837B2 (en) 2021-11-23

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