SG11201506468PA - Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor - Google Patents
Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems thereforInfo
- Publication number
- SG11201506468PA SG11201506468PA SG11201506468PA SG11201506468PA SG11201506468PA SG 11201506468P A SG11201506468P A SG 11201506468PA SG 11201506468P A SG11201506468P A SG 11201506468PA SG 11201506468P A SG11201506468P A SG 11201506468PA SG 11201506468P A SG11201506468P A SG 11201506468PA
- Authority
- SG
- Singapore
- Prior art keywords
- lithography
- manufacturing
- extreme ultraviolet
- amorphous layer
- blank
- Prior art date
Links
- 238000001900 extreme ultraviolet lithography Methods 0.000 title 1
- 238000001459 lithography Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361778351P | 2013-03-12 | 2013-03-12 | |
US14/139,371 US9612521B2 (en) | 2013-03-12 | 2013-12-23 | Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
PCT/US2014/025116 WO2014165298A1 (en) | 2013-03-12 | 2014-03-12 | Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201506468PA true SG11201506468PA (en) | 2015-09-29 |
Family
ID=51525875
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201707331UA SG10201707331UA (en) | 2013-03-12 | 2014-03-12 | Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
SG11201506468PA SG11201506468PA (en) | 2013-03-12 | 2014-03-12 | Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201707331UA SG10201707331UA (en) | 2013-03-12 | 2014-03-12 | Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
Country Status (7)
Country | Link |
---|---|
US (2) | US9612521B2 (zh) |
JP (1) | JP6599846B2 (zh) |
KR (1) | KR102207245B1 (zh) |
CN (1) | CN105009255B (zh) |
SG (2) | SG10201707331UA (zh) |
TW (1) | TWI609231B (zh) |
WO (1) | WO2014165298A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
US9632411B2 (en) | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
SG10201805252RA (en) * | 2013-12-22 | 2018-08-30 | Applied Materials Inc | Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof |
US9739913B2 (en) | 2014-07-11 | 2017-08-22 | Applied Materials, Inc. | Extreme ultraviolet capping layer and method of manufacturing and lithography thereof |
US9581890B2 (en) | 2014-07-11 | 2017-02-28 | Applied Materials, Inc. | Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof |
US9690016B2 (en) | 2014-07-11 | 2017-06-27 | Applied Materials, Inc. | Extreme ultraviolet reflective element with amorphous layers and method of manufacturing thereof |
US10459352B2 (en) | 2015-08-31 | 2019-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask cleaning |
US10256132B2 (en) * | 2016-04-28 | 2019-04-09 | Varian Semiconductor Equipment Associates, Inc. | Reticle processing system |
US11143951B2 (en) * | 2018-04-30 | 2021-10-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pellicle for an EUV lithography mask and a method of manufacturing thereof |
TWI821300B (zh) * | 2018-06-19 | 2023-11-11 | 美商應用材料股份有限公司 | 具有護罩座的沉積系統 |
JP7288782B2 (ja) * | 2019-03-27 | 2023-06-08 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
JP7401356B2 (ja) | 2019-03-27 | 2023-12-19 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
CN114424119A (zh) | 2019-09-26 | 2022-04-29 | Hoya株式会社 | 带多层反射膜的基板、反射型掩模坯料、反射型掩模、以及半导体装置的制造方法 |
US11442356B2 (en) | 2020-05-11 | 2022-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography mask with an amorphous capping layer |
Family Cites Families (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8921666D0 (en) | 1989-09-26 | 1989-11-08 | Peatgrange Ivd Limited | Ion vapour deposition apparatus and method |
US5420067A (en) | 1990-09-28 | 1995-05-30 | The United States Of America As Represented By The Secretary Of The Navy | Method of fabricatring sub-half-micron trenches and holes |
JP2850580B2 (ja) * | 1991-07-16 | 1999-01-27 | 日本電気株式会社 | 薄膜の製造方法 |
JPH06112009A (ja) * | 1992-09-28 | 1994-04-22 | Ulvac Japan Ltd | 高抵抗膜および高抵抗膜の製造方法 |
JP3281173B2 (ja) * | 1993-03-15 | 2002-05-13 | 健 増本 | 高硬度薄膜及びその製造方法 |
US5645646A (en) | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
US5928389A (en) | 1996-10-21 | 1999-07-27 | Applied Materials, Inc. | Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool |
US6096100A (en) | 1997-12-12 | 2000-08-01 | Texas Instruments Incorporated | Method for processing wafers and cleaning wafer-handling implements |
US6010916A (en) | 1997-12-05 | 2000-01-04 | Advanced Micro Devices, Inc. | Method for improving semiconductor wafer processing |
US6142641A (en) | 1998-06-18 | 2000-11-07 | Ultratech Stepper, Inc. | Four-mirror extreme ultraviolet (EUV) lithography projection system |
US6749814B1 (en) | 1999-03-03 | 2004-06-15 | Symyx Technologies, Inc. | Chemical processing microsystems comprising parallel flow microreactors and methods for using same |
US6319635B1 (en) * | 1999-12-06 | 2001-11-20 | The Regents Of The University Of California | Mitigation of substrate defects in reticles using multilayer buffer layers |
WO2002020864A2 (en) | 2000-06-16 | 2002-03-14 | Applied Materials, Inc. | System and method for depositing high dielectric constant materials and compatible conductive materials |
JP2002090978A (ja) | 2000-09-12 | 2002-03-27 | Hoya Corp | 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置 |
US6673524B2 (en) * | 2000-11-17 | 2004-01-06 | Kouros Ghandehari | Attenuating extreme ultraviolet (EUV) phase-shifting mask fabrication method |
JP3939132B2 (ja) | 2000-11-22 | 2007-07-04 | Hoya株式会社 | 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法 |
EP1370708A1 (en) * | 2001-02-20 | 2003-12-17 | Honeywell International, Inc. | Topologically tailored sputtering targets |
US6656643B2 (en) | 2001-02-20 | 2003-12-02 | Chartered Semiconductor Manufacturing Ltd. | Method of extreme ultraviolet mask engineering |
US6840616B2 (en) | 2001-03-29 | 2005-01-11 | Scott Summers | Air folder adjuster apparatus and method |
US6396900B1 (en) * | 2001-05-01 | 2002-05-28 | The Regents Of The University Of California | Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application |
US20030008148A1 (en) | 2001-07-03 | 2003-01-09 | Sasa Bajt | Optimized capping layers for EUV multilayers |
JP2003133205A (ja) | 2001-10-24 | 2003-05-09 | Oki Electric Ind Co Ltd | 反射型マスク、反射型マスク製造方法及び反射型マスク洗浄方法 |
JP4009102B2 (ja) * | 2001-12-19 | 2007-11-14 | 独立行政法人科学技術振興機構 | 半導体特性を示すアモルファス鉄シリサイド膜とその作製方法 |
US7455955B2 (en) | 2002-02-27 | 2008-11-25 | Brewer Science Inc. | Planarization method for multi-layer lithography processing |
US6734117B2 (en) | 2002-03-12 | 2004-05-11 | Nikon Corporation | Periodic clamping method and apparatus to reduce thermal stress in a wafer |
EP2317382B1 (en) * | 2002-04-11 | 2016-10-26 | Hoya Corporation | Reflective mask blank, reflective mask and methods of producing the mask blank and the mask |
US6835503B2 (en) | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
US6806006B2 (en) | 2002-07-15 | 2004-10-19 | International Business Machines Corporation | Integrated cooling substrate for extreme ultraviolet reticle |
US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
US20040091618A1 (en) | 2002-11-08 | 2004-05-13 | Park Han-Su | Photoresist depositon apparatus and method for forming photoresist film using the same |
DE10302342A1 (de) | 2003-01-17 | 2004-08-05 | Schott Glas | Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür |
US6908713B2 (en) | 2003-02-05 | 2005-06-21 | Intel Corporation | EUV mask blank defect mitigation |
JP3683261B2 (ja) * | 2003-03-03 | 2005-08-17 | Hoya株式会社 | 擬似欠陥を有する反射型マスクブランクス及びその製造方法、擬似欠陥を有する反射型マスク及びその製造方法、並びに擬似欠陥を有する反射型マスクブランクス又は反射型マスクの製造用基板 |
US7026076B2 (en) * | 2003-03-03 | 2006-04-11 | Freescale Semiconductor, Inc. | Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC |
DE10317792A1 (de) * | 2003-04-16 | 2004-11-11 | Schott Glas | Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung |
SG115693A1 (en) | 2003-05-21 | 2005-10-28 | Asml Netherlands Bv | Method for coating a substrate for euv lithography and substrate with photoresist layer |
US7001788B2 (en) | 2003-05-29 | 2006-02-21 | Applied Materials, Inc. | Maskless fabrication of waveguide mirrors |
KR100520222B1 (ko) | 2003-06-23 | 2005-10-11 | 삼성전자주식회사 | 반도체 소자에서의 듀얼 게이트 산화막 구조 및 그에 따른형성방법 |
US7326502B2 (en) | 2003-09-18 | 2008-02-05 | Intel Corporation | Multilayer coatings for EUV mask substrates |
KR100680405B1 (ko) | 2003-11-19 | 2007-02-08 | 주식회사 하이닉스반도체 | Euv용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법 |
US7005227B2 (en) | 2004-01-21 | 2006-02-28 | Intel Corporation | One component EUV photoresist |
US7193228B2 (en) * | 2004-03-10 | 2007-03-20 | Cymer, Inc. | EUV light source optical elements |
JP4542807B2 (ja) | 2004-03-31 | 2010-09-15 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、ならびにゲート絶縁膜の形成方法 |
US7198872B2 (en) | 2004-05-25 | 2007-04-03 | International Business Machines Corporation | Light scattering EUVL mask |
KR20070054651A (ko) * | 2004-09-17 | 2007-05-29 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크스 및 그 제조방법 |
US8293430B2 (en) | 2005-01-27 | 2012-10-23 | Applied Materials, Inc. | Method for etching a molybdenum layer suitable for photomask fabrication |
US7336416B2 (en) * | 2005-04-27 | 2008-02-26 | Asml Netherlands B.V. | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
US20060275547A1 (en) | 2005-06-01 | 2006-12-07 | Lee Chung J | Vapor Phase Deposition System and Method |
TWI295816B (en) * | 2005-07-19 | 2008-04-11 | Applied Materials Inc | Hybrid pvd-cvd system |
US7432201B2 (en) * | 2005-07-19 | 2008-10-07 | Applied Materials, Inc. | Hybrid PVD-CVD system |
JP4703354B2 (ja) * | 2005-10-14 | 2011-06-15 | Hoya株式会社 | 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク |
DE102005052000B3 (de) | 2005-10-31 | 2007-07-05 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement mit einer Kontaktstruktur auf der Grundlage von Kupfer und Wolfram |
US7678511B2 (en) | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
US7712333B2 (en) | 2006-03-29 | 2010-05-11 | Asahi Glass Company, Limited | Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography |
US7736820B2 (en) | 2006-05-05 | 2010-06-15 | Asml Netherlands B.V. | Anti-reflection coating for an EUV mask |
KR20070114025A (ko) * | 2006-05-25 | 2007-11-29 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 블랭크 마스크 제조 방법 |
US7825038B2 (en) | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
JP4801550B2 (ja) | 2006-09-26 | 2011-10-26 | 富士通株式会社 | レジスト組成物、レジストパターンの形成方法、及び半導体装置の製造方法 |
US7892719B2 (en) | 2006-11-03 | 2011-02-22 | Intel Corporation | Photonic crystal EUV photoresists |
EP2087510A4 (en) | 2006-11-27 | 2010-05-05 | Nikon Corp | OPTICAL ELEMENT, ASSOCIATED EXPOSURE UNIT AND METHOD FOR PRODUCING THE DEVICE |
WO2008084680A1 (ja) * | 2006-12-27 | 2008-07-17 | Asahi Glass Company, Limited | Euvリソグラフィ用反射型マスクブランク |
TWI427334B (zh) * | 2007-02-05 | 2014-02-21 | Zeiss Carl Smt Gmbh | Euv蝕刻裝置反射光學元件 |
US20090278233A1 (en) | 2007-07-26 | 2009-11-12 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
WO2009031232A1 (ja) | 2007-09-07 | 2009-03-12 | Canon Anelva Corporation | スパッタリング方法および装置 |
JP5039495B2 (ja) | 2007-10-04 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | マスクブランク検査方法、反射型露光マスクの製造方法、反射型露光方法および半導体集積回路の製造方法 |
US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
US20090176367A1 (en) | 2008-01-08 | 2009-07-09 | Heidi Baks | OPTIMIZED SiCN CAPPING LAYER |
US8512916B2 (en) * | 2008-03-31 | 2013-08-20 | Hoya Corporation | Photomask blank, photomask, and method for manufacturing photomask blank |
DE102008042212A1 (de) * | 2008-09-19 | 2010-04-01 | Carl Zeiss Smt Ag | Reflektives optisches Element und Verfahren zu seiner Herstellung |
CN102782531B (zh) * | 2009-12-15 | 2014-12-17 | 卡尔蔡司Smt有限责任公司 | 用于极紫外光刻的反射光学元件 |
KR20130111524A (ko) * | 2010-07-27 | 2013-10-10 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사층 형성 기판, 및 euv 리소그래피용 반사형 마스크 블랭크 |
TW201224190A (en) | 2010-10-06 | 2012-06-16 | Applied Materials Inc | Atomic layer deposition of photoresist materials and hard mask precursors |
KR20120042169A (ko) | 2010-10-22 | 2012-05-03 | 삼성모바일디스플레이주식회사 | 액정 표시 장치 및 그 제조 방법 |
JP6013720B2 (ja) | 2010-11-22 | 2016-10-25 | 芝浦メカトロニクス株式会社 | 反射型マスクの製造方法、および反射型マスクの製造装置 |
US8475977B2 (en) | 2010-12-02 | 2013-07-02 | Intermolecular, Inc | Protective cap for extreme ultraviolet lithography masks |
US8562794B2 (en) | 2010-12-14 | 2013-10-22 | Asahi Glass Company, Limited | Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank |
NL2007768A (en) | 2010-12-14 | 2012-06-18 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
WO2012124506A1 (ja) | 2011-03-14 | 2012-09-20 | 富士電機株式会社 | 酸化物基板およびその製造方法 |
NL2009487A (en) | 2011-10-14 | 2013-04-16 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
US8691476B2 (en) * | 2011-12-16 | 2014-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV mask and method for forming the same |
US9051649B2 (en) | 2013-03-11 | 2015-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor film deposition apparatus and method with improved heater cooling efficiency |
-
2013
- 2013-12-23 US US14/139,371 patent/US9612521B2/en active Active
-
2014
- 2014-03-07 TW TW103107928A patent/TWI609231B/zh active
- 2014-03-12 WO PCT/US2014/025116 patent/WO2014165298A1/en active Application Filing
- 2014-03-12 JP JP2016501750A patent/JP6599846B2/ja active Active
- 2014-03-12 KR KR1020157027662A patent/KR102207245B1/ko active IP Right Grant
- 2014-03-12 SG SG10201707331UA patent/SG10201707331UA/en unknown
- 2014-03-12 SG SG11201506468PA patent/SG11201506468PA/en unknown
- 2014-03-12 CN CN201480010492.0A patent/CN105009255B/zh active Active
-
2017
- 2017-02-28 US US15/444,864 patent/US20170168383A1/en not_active Abandoned
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US20170168383A1 (en) | 2017-06-15 |
SG10201707331UA (en) | 2017-10-30 |
KR20150130371A (ko) | 2015-11-23 |
TWI609231B (zh) | 2017-12-21 |
US9612521B2 (en) | 2017-04-04 |
WO2014165298A1 (en) | 2014-10-09 |
TW201447471A (zh) | 2014-12-16 |
CN105009255A (zh) | 2015-10-28 |
KR102207245B1 (ko) | 2021-01-25 |
JP6599846B2 (ja) | 2019-10-30 |
US20140268081A1 (en) | 2014-09-18 |
JP2016519329A (ja) | 2016-06-30 |
CN105009255B (zh) | 2017-11-03 |
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