SG11201505421SA - Method for manufacturing mask blank substrate, method for manufacturing mask blank and method for manufacturing transfer mask - Google Patents

Method for manufacturing mask blank substrate, method for manufacturing mask blank and method for manufacturing transfer mask

Info

Publication number
SG11201505421SA
SG11201505421SA SG11201505421SA SG11201505421SA SG11201505421SA SG 11201505421S A SG11201505421S A SG 11201505421SA SG 11201505421S A SG11201505421S A SG 11201505421SA SG 11201505421S A SG11201505421S A SG 11201505421SA SG 11201505421S A SG11201505421S A SG 11201505421SA
Authority
SG
Singapore
Prior art keywords
manufacturing
mask blank
mask
transfer
substrate
Prior art date
Application number
SG11201505421SA
Other languages
English (en)
Inventor
Takeyuki Yamada
Takahito Nishimura
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201505421SA publication Critical patent/SG11201505421SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Surface Treatment Of Glass (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Inorganic Chemistry (AREA)
SG11201505421SA 2013-01-18 2014-01-08 Method for manufacturing mask blank substrate, method for manufacturing mask blank and method for manufacturing transfer mask SG11201505421SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013007074 2013-01-18
PCT/JP2014/050110 WO2014112409A1 (ja) 2013-01-18 2014-01-08 マスクブランク用基板の製造方法、マスクブランクの製造方法及び転写用マスクの製造方法

Publications (1)

Publication Number Publication Date
SG11201505421SA true SG11201505421SA (en) 2015-08-28

Family

ID=51209501

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201505421SA SG11201505421SA (en) 2013-01-18 2014-01-08 Method for manufacturing mask blank substrate, method for manufacturing mask blank and method for manufacturing transfer mask

Country Status (6)

Country Link
US (1) US10310373B2 (ko)
JP (2) JP5882504B2 (ko)
KR (1) KR102228638B1 (ko)
SG (1) SG11201505421SA (ko)
TW (1) TWI609234B (ko)
WO (1) WO2014112409A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014104009A1 (ja) * 2012-12-27 2014-07-03 Hoya株式会社 マスクブランク用基板処理装置、マスクブランク用基板処理方法、マスクブランク用基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法
JP6328502B2 (ja) * 2013-07-04 2018-05-23 Hoya株式会社 基板の製造方法、マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板製造装置
JP6292581B2 (ja) * 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
KR102313892B1 (ko) * 2016-03-29 2021-10-15 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
US9964847B2 (en) * 2016-06-20 2018-05-08 Globalfoundries Inc. Mask substrate structure
JP6558326B2 (ja) * 2016-08-23 2019-08-14 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置
CN106315113B (zh) * 2016-08-23 2018-10-12 重庆墨希科技有限公司 连续自动去除绑定区域石墨烯的装置和方法
WO2019049919A1 (ja) * 2017-09-07 2019-03-14 株式会社ニコン フォトマスクブランクス、フォトマスク、露光方法、及び、デバイスの製造方法
JP7298556B2 (ja) * 2020-06-30 2023-06-27 信越化学工業株式会社 フォトマスクブランクの製造方法
WO2024127794A1 (ja) * 2022-12-13 2024-06-20 株式会社ダイセル 表面処理剤、及びエッチングされたシリコン基板の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3837783B2 (ja) * 1996-08-12 2006-10-25 森 勇蔵 超純水中の水酸基による加工方法
JP4484980B2 (ja) 1999-05-20 2010-06-16 株式会社ルネサステクノロジ フォトマスクの洗浄方法、洗浄装置およびフォトマスクの洗浄液
JP4526547B2 (ja) 2002-08-19 2010-08-18 Ｈｏｙａ株式会社 マスクブランクス用ガラス基板の製造方法、マスクブランクスの製造方法、ｅｕｖ反射型マスクブランクスの製造方法、転写マスクの製造方法、ｅｕｖ反射型マスクの製造方法及び半導体装置の製造方法
CN1761913B (zh) * 2003-03-28 2010-04-28 Hoya株式会社 光刻掩膜板的制造方法
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP4506399B2 (ja) * 2004-10-13 2010-07-21 株式会社荏原製作所 触媒支援型化学加工方法
JP2008081389A (ja) * 2006-08-28 2008-04-10 Osaka Univ 触媒支援型化学加工方法及び装置
EP2381008A2 (en) * 2006-08-28 2011-10-26 Osaka University Catalyst-aided chemical processing method and apparatus
JP4982742B2 (ja) 2006-09-13 2012-07-25 国立大学法人 熊本大学 磁性微粒子を用いた触媒化学加工方法及び装置
US8734661B2 (en) * 2007-10-15 2014-05-27 Ebara Corporation Flattening method and flattening apparatus
JP4887266B2 (ja) 2007-10-15 2012-02-29 株式会社荏原製作所 平坦化方法
KR20090077555A (ko) * 2008-01-11 2009-07-15 주식회사 하이닉스반도체 세정 장치 및 이를 이용한 포토마스크의 세정방법
JP5343250B2 (ja) * 2009-02-19 2013-11-13 国立大学法人 熊本大学 触媒支援型化学加工方法及びそれを用いた加工装置
JP5251861B2 (ja) * 2009-12-28 2013-07-31 信越化学工業株式会社 合成石英ガラス基板の製造方法
KR20130132787A (ko) * 2010-09-30 2013-12-05 호야 가부시키가이샤 마스크 블랭크 및 그 제조 방법과 전사용 마스크
KR101350714B1 (ko) * 2011-01-12 2014-01-13 주식회사 에스앤에스텍 마스크 블랭크용 기판의 연마 방법과 마스크 블랭크용 기판과 마스크 블랭크
JP5786211B2 (ja) * 2011-01-21 2015-09-30 Hoya株式会社 マスクブランク用ガラス基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、および半導体デバイスの製造方法
JP5754754B2 (ja) * 2011-12-06 2015-07-29 国立大学法人大阪大学 固体酸化物の加工方法及びその装置

Also Published As

Publication number Publication date
TWI609234B (zh) 2017-12-21
JP2016128377A (ja) 2016-07-14
KR20150108354A (ko) 2015-09-25
WO2014112409A1 (ja) 2014-07-24
JP5882504B2 (ja) 2016-03-09
US20150355537A1 (en) 2015-12-10
TW201437742A (zh) 2014-10-01
JPWO2014112409A1 (ja) 2017-01-19
US10310373B2 (en) 2019-06-04
JP6208264B2 (ja) 2017-10-04
KR102228638B1 (ko) 2021-03-16

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