SG11201504465TA - Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film - Google Patents

Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film

Info

Publication number
SG11201504465TA
SG11201504465TA SG11201504465TA SG11201504465TA SG11201504465TA SG 11201504465T A SG11201504465T A SG 11201504465TA SG 11201504465T A SG11201504465T A SG 11201504465TA SG 11201504465T A SG11201504465T A SG 11201504465TA SG 11201504465T A SG11201504465T A SG 11201504465TA
Authority
SG
Singapore
Prior art keywords
producing
ruthenium
thin film
containing thin
ruthenium complex
Prior art date
Application number
SG11201504465TA
Other languages
English (en)
Inventor
Kenichi Tada
Toshiki Yamamoto
Hiroyuki Oike
Atsushi Maniwa
Hirokazu Chiba
Kohei Iwanaga
Kazuhisa Kawano
Original Assignee
Tosoh Corp
Sagami Chemical Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2013133480A external-priority patent/JP6178638B2/ja
Application filed by Tosoh Corp, Sagami Chemical Res Inst filed Critical Tosoh Corp
Publication of SG11201504465TA publication Critical patent/SG11201504465TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/0046—Ruthenium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201504465TA 2012-12-07 2013-12-06 Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film SG11201504465TA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012268396 2012-12-07
JP2013133480A JP6178638B2 (ja) 2013-06-26 2013-06-26 ルテニウム錯体及びその製造方法、ルテニウム含有薄膜及びその作製方法
JP2013156294 2013-07-29
PCT/JP2013/082889 WO2014088108A1 (ja) 2012-12-07 2013-12-06 ルテニウム錯体及びその製造方法並びにルテニウム含有薄膜の作製方法

Publications (1)

Publication Number Publication Date
SG11201504465TA true SG11201504465TA (en) 2015-07-30

Family

ID=50883520

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201504465TA SG11201504465TA (en) 2012-12-07 2013-12-06 Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film

Country Status (7)

Country Link
US (1) US9349601B2 (zh)
EP (1) EP2930179B1 (zh)
KR (1) KR102040043B1 (zh)
CN (1) CN104903337B (zh)
SG (1) SG11201504465TA (zh)
TW (1) TWI610932B (zh)
WO (1) WO2014088108A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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JP2015081246A (ja) * 2013-10-24 2015-04-27 東ソー株式会社 ルテニウム錯体及びその製造方法、ルテニウム含有薄膜及びその作製方法
JP5892668B1 (ja) 2014-10-03 2016-03-23 田中貴金属工業株式会社 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
WO2018125052A1 (en) * 2016-12-27 2018-07-05 Intel Corporation Selective area deposition of metal layers from hetero-pentadienyl metal complex precursors
JP6321252B1 (ja) * 2017-03-24 2018-05-09 田中貴金属工業株式会社 イリジウム錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
JP6912913B2 (ja) * 2017-03-29 2021-08-04 株式会社Adeka 原子層堆積法による酸化イットリウム含有薄膜の製造方法
US10731250B2 (en) * 2017-06-06 2020-08-04 Lam Research Corporation Depositing ruthenium layers in interconnect metallization
WO2019246500A1 (en) * 2018-06-22 2019-12-26 Applied Materials, Inc. Catalyzed deposition of metal films
CN112313240A (zh) 2018-07-27 2021-02-02 优美科股份公司及两合公司 用于制造半导体元件或电子存储器的有机金属化合物
JP2022031988A (ja) * 2018-11-08 2022-02-24 株式会社Adeka 原子層堆積法による金属ルテニウム薄膜の製造方法
KR102578747B1 (ko) * 2021-06-08 2023-09-15 (주)원익머트리얼즈 루테늄 유기금속화합물 및 이의 제조방법
KR102618936B1 (ko) * 2021-09-13 2023-12-28 (주)원익머트리얼즈 신규한 루테늄 유기금속화합물 및 이의 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11209314A (ja) 1997-09-30 1999-08-03 Takasago Internatl Corp シクロオクタジエン類の製造方法
JP4517565B2 (ja) 2001-09-12 2010-08-04 東ソー株式会社 ルテニウム錯体、その製造方法、及び薄膜の製造方法
KR100727372B1 (ko) 2001-09-12 2007-06-12 토소가부시키가이샤 루테늄착체, 그 제조방법 및 박막의 제조방법
JP3649441B1 (ja) 2003-12-09 2005-05-18 高砂香料工業株式会社 ３級メルカプトケトンおよびそれを含有する香気・香味組成物
US7619093B2 (en) 2004-10-15 2009-11-17 Praxair Technology, Inc. Organometallic compounds and mixtures thereof
EP1935897B1 (en) 2006-12-22 2011-03-02 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude New organo-Ruthenium compound, the process for its preparation and its use as a ruthenium precursor to manufacture ruthenium based film coated metal electrodes
JP5202905B2 (ja) 2007-08-22 2013-06-05 東ソー株式会社 ルテニウム化合物、その製造方法、ルテニウム含有薄膜及びその製造方法
US20090202740A1 (en) * 2008-01-24 2009-08-13 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
JP2011106008A (ja) * 2009-11-20 2011-06-02 Adeka Corp 化学気相成長用原料及びルテニウム化合物

Also Published As

Publication number Publication date
WO2014088108A1 (ja) 2014-06-12
EP2930179A1 (en) 2015-10-14
KR102040043B1 (ko) 2019-11-04
CN104903337A (zh) 2015-09-09
US20150303063A1 (en) 2015-10-22
EP2930179B1 (en) 2018-09-05
TW201443067A (zh) 2014-11-16
EP2930179A4 (en) 2016-10-05
US9349601B2 (en) 2016-05-24
KR20150091347A (ko) 2015-08-10
TWI610932B (zh) 2018-01-11
CN104903337B (zh) 2018-07-24

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