SG11201504465TA - Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film - Google Patents

Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film

Info

Publication number
SG11201504465TA
SG11201504465TA SG11201504465TA SG11201504465TA SG11201504465TA SG 11201504465T A SG11201504465T A SG 11201504465TA SG 11201504465T A SG11201504465T A SG 11201504465TA SG 11201504465T A SG11201504465T A SG 11201504465TA SG 11201504465T A SG11201504465T A SG 11201504465TA
Authority
SG
Singapore
Prior art keywords
producing
ruthenium
thin film
containing thin
ruthenium complex
Prior art date
Application number
SG11201504465TA
Inventor
Kenichi Tada
Toshiki Yamamoto
Hiroyuki Oike
Atsushi Maniwa
Hirokazu Chiba
Kohei Iwanaga
Kazuhisa Kawano
Original Assignee
Tosoh Corp
Sagami Chemical Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2013133480A external-priority patent/JP6178638B2/en
Application filed by Tosoh Corp, Sagami Chemical Res Inst filed Critical Tosoh Corp
Publication of SG11201504465TA publication Critical patent/SG11201504465TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/0046—Ruthenium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201504465TA 2012-12-07 2013-12-06 Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film SG11201504465TA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012268396 2012-12-07
JP2013133480A JP6178638B2 (en) 2013-06-26 2013-06-26 Ruthenium complex and production method thereof, ruthenium-containing thin film and production method thereof
JP2013156294 2013-07-29
PCT/JP2013/082889 WO2014088108A1 (en) 2012-12-07 2013-12-06 Ruthenium complex and method for producing same, and method for producing ruthenium-containing thin film

Publications (1)

Publication Number Publication Date
SG11201504465TA true SG11201504465TA (en) 2015-07-30

Family

ID=50883520

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201504465TA SG11201504465TA (en) 2012-12-07 2013-12-06 Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film

Country Status (7)

Country Link
US (1) US9349601B2 (en)
EP (1) EP2930179B1 (en)
KR (1) KR102040043B1 (en)
CN (1) CN104903337B (en)
SG (1) SG11201504465TA (en)
TW (1) TWI610932B (en)
WO (1) WO2014088108A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015081246A (en) * 2013-10-24 2015-04-27 東ソー株式会社 Ruthenium complex and method of producing the same, and ruthenium-containing thin film and method of making the same
JP5892668B1 (en) * 2014-10-03 2016-03-23 田中貴金属工業株式会社 Chemical vapor deposition material comprising organic ruthenium compound and chemical vapor deposition method using the chemical vapor deposition material
WO2018125052A1 (en) * 2016-12-27 2018-07-05 Intel Corporation Selective area deposition of metal layers from hetero-pentadienyl metal complex precursors
JP6321252B1 (en) * 2017-03-24 2018-05-09 田中貴金属工業株式会社 Chemical vapor deposition material comprising iridium complex and chemical vapor deposition method using the chemical vapor deposition material
JP6912913B2 (en) * 2017-03-29 2021-08-04 株式会社Adeka Method for producing yttrium oxide-containing thin film by atomic layer deposition
US10731250B2 (en) * 2017-06-06 2020-08-04 Lam Research Corporation Depositing ruthenium layers in interconnect metallization
US12000044B2 (en) * 2018-06-22 2024-06-04 Applied Materials, Inc. Catalyzed deposition of metal films
EP3830097A1 (en) 2018-07-27 2021-06-09 UMICORE AG & Co. KG Organometallic compounds for the manufacture of a semiconductor element or electronic memory
JP2022031988A (en) * 2018-11-08 2022-02-24 株式会社Adeka Manufacturing method of metal ruthenium thin film by atomic layer deposition method
KR102578747B1 (en) * 2021-06-08 2023-09-15 (주)원익머트리얼즈 Ruthenium organometallic compound, and method for producing same
KR102618936B1 (en) * 2021-09-13 2023-12-28 (주)원익머트리얼즈 New Ruthenium organometallic compound, and method for producing same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11209314A (en) 1997-09-30 1999-08-03 Takasago Internatl Corp Production of cyclooctadienes
JP4517565B2 (en) 2001-09-12 2010-08-04 東ソー株式会社 Ruthenium complex, method for producing the same, and method for producing the thin film
KR100727372B1 (en) 2001-09-12 2007-06-12 토소가부시키가이샤 Ruthenium complex, manufacturing process thereof and the method for forming thin-film using the complex
JP3649441B1 (en) 2003-12-09 2005-05-18 高砂香料工業株式会社 Tertiary mercapto ketone and fragrance / flavor composition containing the same
US7619093B2 (en) 2004-10-15 2009-11-17 Praxair Technology, Inc. Organometallic compounds and mixtures thereof
EP1935897B1 (en) 2006-12-22 2011-03-02 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude New organo-Ruthenium compound, the process for its preparation and its use as a ruthenium precursor to manufacture ruthenium based film coated metal electrodes
JP5202905B2 (en) * 2007-08-22 2013-06-05 東ソー株式会社 Ruthenium compound, method for producing the same, ruthenium-containing thin film and method for producing the same
US20090203917A1 (en) * 2008-01-24 2009-08-13 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
JP2011106008A (en) 2009-11-20 2011-06-02 Adeka Corp Raw material for chemical vapor deposition and ruthenium compound

Also Published As

Publication number Publication date
CN104903337A (en) 2015-09-09
WO2014088108A1 (en) 2014-06-12
KR102040043B1 (en) 2019-11-04
CN104903337B (en) 2018-07-24
EP2930179A1 (en) 2015-10-14
TW201443067A (en) 2014-11-16
KR20150091347A (en) 2015-08-10
US20150303063A1 (en) 2015-10-22
EP2930179B1 (en) 2018-09-05
EP2930179A4 (en) 2016-10-05
US9349601B2 (en) 2016-05-24
TWI610932B (en) 2018-01-11

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