KR102618936B1 - New Ruthenium organometallic compound, and method for producing same - Google Patents
New Ruthenium organometallic compound, and method for producing same Download PDFInfo
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- KR102618936B1 KR102618936B1 KR1020210121410A KR20210121410A KR102618936B1 KR 102618936 B1 KR102618936 B1 KR 102618936B1 KR 1020210121410 A KR1020210121410 A KR 1020210121410A KR 20210121410 A KR20210121410 A KR 20210121410A KR 102618936 B1 KR102618936 B1 KR 102618936B1
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- ruthenium
- cycloheptatriene
- steps
- dimer
- organometallic compound
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- 229910052707 ruthenium Inorganic materials 0.000 title claims abstract description 111
- -1 Ruthenium organometallic compound Chemical class 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 150000001875 compounds Chemical class 0.000 claims description 35
- 239000000539 dimer Substances 0.000 claims description 34
- CHVJITGCYZJHLR-UHFFFAOYSA-N cyclohepta-1,3,5-triene Chemical compound C1C=CC=CC=C1 CHVJITGCYZJHLR-UHFFFAOYSA-N 0.000 claims description 33
- BDXJANJAHYKTMI-UHFFFAOYSA-N 2,3,4,5-tetramethyl-1h-pyrrole Chemical compound CC=1NC(C)=C(C)C=1C BDXJANJAHYKTMI-UHFFFAOYSA-N 0.000 claims description 32
- 125000003963 dichloro group Chemical group Cl* 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- BIXNGBXQRRXPLM-UHFFFAOYSA-K ruthenium(3+);trichloride;hydrate Chemical compound O.Cl[Ru](Cl)Cl BIXNGBXQRRXPLM-UHFFFAOYSA-K 0.000 claims description 9
- YAYGSLOSTXKUBW-UHFFFAOYSA-N ruthenium(2+) Chemical compound [Ru+2] YAYGSLOSTXKUBW-UHFFFAOYSA-N 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- CZKMPDNXOGQMFW-UHFFFAOYSA-N chloro(triethyl)germane Chemical compound CC[Ge](Cl)(CC)CC CZKMPDNXOGQMFW-UHFFFAOYSA-N 0.000 claims description 7
- 150000004678 hydrides Chemical class 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- USKZHEQYENVSMH-YDFGWWAZSA-N 1,3,5-Heptatriene Chemical compound C\C=C\C=C\C=C USKZHEQYENVSMH-YDFGWWAZSA-N 0.000 claims description 4
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 4
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 claims description 4
- 239000007788 liquid Substances 0.000 abstract description 8
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 53
- 239000002904 solvent Substances 0.000 description 44
- 239000007787 solid Substances 0.000 description 43
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 35
- 238000006243 chemical reaction Methods 0.000 description 30
- 239000000203 mixture Substances 0.000 description 21
- 239000000243 solution Substances 0.000 description 21
- 238000003756 stirring Methods 0.000 description 20
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 18
- 239000000376 reactant Substances 0.000 description 18
- 239000000047 product Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical group CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 12
- 238000005481 NMR spectroscopy Methods 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 239000000706 filtrate Substances 0.000 description 12
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 11
- 238000005406 washing Methods 0.000 description 11
- 238000005160 1H NMR spectroscopy Methods 0.000 description 9
- 239000012454 non-polar solvent Substances 0.000 description 9
- 238000002411 thermogravimetry Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000003480 eluent Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 229910019891 RuCl3 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000000113 differential scanning calorimetry Methods 0.000 description 6
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 6
- 229910009112 xH2O Inorganic materials 0.000 description 6
- 150000003304 ruthenium compounds Chemical class 0.000 description 5
- 239000011877 solvent mixture Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OQWAEQHNVGGBHL-UHFFFAOYSA-N 7-methylcyclohepta-1,3,5-triene Chemical compound CC1C=CC=CC=C1 OQWAEQHNVGGBHL-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000010898 silica gel chromatography Methods 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- CGDXUTMWWHKMOE-UHFFFAOYSA-M difluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)F CGDXUTMWWHKMOE-UHFFFAOYSA-M 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000007523 nucleic acids Chemical class 0.000 description 1
- 102000039446 nucleic acids Human genes 0.000 description 1
- 108020004707 nucleic acids Proteins 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0046—Ruthenium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
- C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
Abstract
본 발명은, 열적 안정성이 개선되고, 상온에서 액체이어서 낮은 온도에서도 쉽게 양질의 루테늄 박막의 제조가 가능한 신규한 루테늄 유기금속화합물 및 이의 제조방법에 관한 것이다. The present invention relates to a novel ruthenium organometallic compound that has improved thermal stability and is liquid at room temperature, enabling the production of high-quality ruthenium thin films even at low temperatures, and a method for producing the same.
Description
본 발명은, 반도체 소자의 제조용 원료로서 유용한 신규한 루테늄 유기금속 화합물 및 그 제조방법에 관한 것이다.The present invention relates to a novel ruthenium organometallic compound useful as a raw material for manufacturing semiconductor devices and a method for producing the same.
루테늄은 루테늄 자체뿐만 아니라, 그 산화물도 전기 전도성을 가지고 있어 전극 재료로서 유용하며, 또한 미세화 가공성도 우수하다. 이러한 루테늄의 안정적인 전극 특징 및 우수한 가공성으로 반도체 메모리 소자의 고집적화에 따른 메모리셀(memory cell) 미세화의 전극 재료로 루테늄이 이용되고 있다. 특히 루테늄 박막은 고집적 메모리소자인 DRAM 커패시터(capacitor)의 전극 재료, 또는 반도체 소자에서 구리 배선재료의 확산 방지막으로 사용되고 있다.Ruthenium is useful as an electrode material because not only ruthenium itself but also its oxide has electrical conductivity, and it also has excellent micronization processability. Due to the stable electrode characteristics and excellent processability of ruthenium, ruthenium is being used as an electrode material for miniaturization of memory cells due to the high integration of semiconductor memory devices. In particular, ruthenium thin films are used as electrode materials for DRAM capacitors, which are highly integrated memory devices, or as diffusion barriers for copper wiring materials in semiconductor devices.
한편, 고집적화된 메모리 소자의 루테늄 함유 박막의 제조방법으로서는 화학기상증착법(chemical vapor deposition, CVD법) 또는 원자층 증착법(Atomic Layer Deposition, ALD법)이 적용된다. Meanwhile, chemical vapor deposition (CVD) or atomic layer deposition (ALD) is used as a method of manufacturing ruthenium-containing thin films for highly integrated memory devices.
특히, CVD법에 의한 루테늄 박막 또는 루테늄 산화물 박막을 형성시키기 위한 유기금속화합물로서는, 상온에서 액체이며 취급성이 우수하고 또한 안정성 및 증기압의 관점에서 안정적인 공급이 가능한 화합물일수록 루테늄 박막 또는 루테늄 산화물 박막 형성용으로 유리하다. In particular, as an organometallic compound for forming a ruthenium thin film or ruthenium oxide thin film by the CVD method, a compound that is liquid at room temperature, has excellent handling properties, and can be supplied stably in terms of stability and vapor pressure is more likely to form a ruthenium thin film or ruthenium oxide thin film. It is advantageous for use.
또한, 루테늄 박막 공정은 루테늄 유기금속화합물의 고온 열분해로 이루어지므로 고온 안정성 및 열분해 후 잔류물질이 적은 화합물일수록 루테늄 박막 형성에 우수한 루테늄 유기금속화합물일 수 있다.In addition, since the ruthenium thin film process is achieved by high-temperature thermal decomposition of ruthenium organometallic compounds, compounds with high temperature stability and less residual substances after thermal decomposition are more likely to be excellent ruthenium organometallic compounds for forming ruthenium thin films.
따라서 상기와 같은 조건에 적합한 루테늄 유기금속화합물이 요구되고 있다. Therefore, ruthenium organometallic compounds suitable for the above conditions are required.
본 발명은, 상기와 같이 루테늄 박막 형성에 유리한 것으로서, 열적 안정성이 우수하고, 100℃ 이하의 녹는 점을 가지거나, 또는 상온에서도 액체이어서 루테늄 박막 형성 공정에 필요한 루테늄 화합물의 안정적인 공급이 가능하여 비교적 낮은 온도에서도 쉽게 양질의 루테늄 박막의 제조가 가능한 신규한 루테늄 유기금속화합물 및 이의 제조방법을 제공하는 것을 목적으로 한다.The present invention is advantageous for forming ruthenium thin films as described above, has excellent thermal stability, has a melting point of 100°C or lower, or is liquid even at room temperature, enabling a stable supply of ruthenium compounds required for the ruthenium thin film formation process, making it relatively easy to use. The purpose is to provide a novel ruthenium organometallic compound and a method for producing the same that enable the easy production of high-quality ruthenium thin films even at low temperatures.
본 발명은, 상기 목적을 달성하기 위하여 하기 화학식 1의 루테늄 유기금속화합물을 제공한다. In order to achieve the above object, the present invention provides a ruthenium organometallic compound of the following formula (1).
[화학식 1] [Formula 1]
상기 화학식 1 중 R은 수소 또는 탄소수 1 내지 4의 직쇄 또는 분지쇄의 알킬기이고, 바람직한 알킬기는 메틸기이다. In Formula 1, R is hydrogen or a straight or branched alkyl group having 1 to 4 carbon atoms, and a preferred alkyl group is a methyl group.
또한, 본 발명은 하기의 (a) 내지 (d)의 단계 1-1 내지 1-4를 포함하는 루테늄 유기금속화합물의 제조방법을 제공한다. Additionally, the present invention provides a method for producing a ruthenium organometallic compound comprising steps 1-1 to 1-4 of (a) to (d) below.
(a) 염화루테늄 수화물 및 1,3,5-시클로헵타트리엔으로부터 디클로로(시클로헵타트리엔)루테늄(II)-다이머를 얻는 단계 1-1;(a) Step 1-1 of obtaining dichloro(cycloheptatriene)ruthenium(II)-dimer from ruthenium chloride hydrate and 1,3,5-cycloheptatriene;
(b) 상기 단계 1-1의 디클로로(시클로헵타트리엔)루테늄(II)-다이머와 은트리플루오로메탄술폰산염 (Ag(OTf))로부터 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머를 제조하는 단계 1-2; (b) Ditrifluoromethanesulfonate (cycloheptatriene) from dichloro(cycloheptatriene)ruthenium(II)-dimer and silver trifluoromethanesulfonate (Ag(OTf)) in step 1-1. Step 1-2 of preparing ruthenium (II)-dimer;
(c) 상기 단계 1-2의 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 및 2,3,4,5-tetramethyl pyrrole로부터 트리플루오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II)을 제조하는 단계 1-3; 및 (c) Trifluoromethane sulfonate (cycloheptatriene) from ditrifluoromethanesulfonate (cycloheptatriene) ruthenium (II)-dimer and 2,3,4,5-tetramethyl pyrrole in step 1-2 N) Steps 1-3 for producing (2,3,4,5-tetramethylpyrrole)ruthenium(II); and
(d) 상기 단계 1-3의 트리플루오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) 및 lithium aluminum tri(t-butoxy) hydride (LiAl(OtBu)3H)로부터 Ru(η5-CHeptD)(η5-NC4Me4)을 얻는 단계 1-4;(d) trifluoromethanesulfonate (cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) and lithium aluminum tri (t-butoxy) hydride (LiAl) of steps 1-3 Steps 1-4 to obtain Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ) from (O t Bu) 3 H);
상기 단계 1-4의 Ru(η5-CHeptD) 및 (η5-NC4Me4)는 각각 Ru(η5-시클로헵타디엔) 및 (η5-2,3,4,5-테트라메틸피롤)이다.Ru(η 5 -CHeptD) and (η 5 -NC 4 Me 4 ) in steps 1-4 are Ru(η 5 -cycloheptadiene) and (η 5 -2,3,4,5-tetramethylpyrrole, respectively. )am.
본 발명의 일 실시예로서 하기 단계 1-1 내지 단계 1-4의 제조방법은 상기 화학식 1의 루테늄 유기금속화합물 중 R이 수소인 경우, 즉 Ru(η5-CHeptD)(η5-NC4Me4)의 구체적인 제조방법을 나타낸 도식이다.As an example of the present invention, the preparation method of steps 1-1 to 1-4 below is performed when R in the ruthenium organometallic compound of Formula 1 is hydrogen, that is, Ru(η 5 -CHeptD)(η 5 -NC 4 This is a schematic showing the specific manufacturing method of Me 4 ).
(단계 1-1)(Step 1-1)
(단계 1-2)(Step 1-2)
(단계 1-3)(Steps 1-3)
(단계 1-4)(Steps 1-4)
본 발명은 또한, 상기 화학식 1의 루테늄 유기금속화합물 중 R이 탄소수 1 내지 4의 직쇄 또는 분지쇄의 알킬기인 경우, 하기의 (i) 내지 (iv) 단계의 단계 2-1 내지 2-4를 포함하는 루테늄 유기금속화합물의 제조방법을 제공한다. The present invention also provides that, when R in the ruthenium organometallic compound of Formula 1 is a straight-chain or branched alkyl group having 1 to 4 carbon atoms, steps 2-1 to 2-4 of steps (i) to (iv) below A method for producing a ruthenium organometallic compound is provided.
(i) 염화루테늄 수화물 및 R-1,3,5-시클로헵타트리엔으로부터 디클로로(R-시클로헵타트리엔)루테늄(II)-다이머를 얻는 단계 2-1;(i) Step 2-1 of obtaining dichloro(R-cycloheptatriene)ruthenium(II)-dimer from ruthenium chloride hydrate and R-1,3,5-cycloheptatriene;
(ii) 상기 단계 2-1의 디클로로(R-시클로헵타트리엔)루테늄(II)-다이머와 은트리플루오로메탄술폰산염 (Ag(OTf))로부터 디트리플루오로메탄술포네이트(R-시클로헵타트리엔)루테늄(II)-다이머를 제조하는 단계 2-2; (ii) Ditrifluoromethanesulfonate (R-cycloheptatriene) from dichloro(R-cycloheptatriene)ruthenium(II)-dimer and silver trifluoromethanesulfonate (Ag(OTf)) in step 2-1. Step 2-2 of producing heptatriene) ruthenium (II)-dimer;
(iii) 상기 단계 2-2의 디트리플루오로메탄술포네이트(R-시클로헵타트리엔)루테늄(II)-다이머 및 2,3,4,5-tetramethyl pyrrole로부터 트리플루오로메탄술포네이트(R-시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II)을 제조하는 단계 2-3; 및 (iii) Trifluoromethanesulfonate (R -Step 2-3 of producing cycloheptatriene)(2,3,4,5-tetramethylpyrrole)ruthenium(II); and
(iv) 상기 단계 2-3의 트리플루오로메탄술포네이트(R-시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) 및 lithium aluminumtri(t-butoxy) hydride (LiAl(OtBu)3H)로부터 Ru(η5-RCHeptD)(η5-NC4Me4)을 얻는 단계 2-4;
상기 단계 2-4의 “Ru(η5-RCHeptD)(η5-NC4Me4)”는 “Ru(η5-R-시클로헵타디엔)(η5-2,3,4,5-테트라메틸피롤)이고,
상기 단계 2-1 내지 2-4의 R은, 탄소수 1 내지 4의 직쇄 또는 분지쇄의 알킬기이다.(iv) trifluoromethanesulfonate (R-cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) and lithium aluminumtri (t-butoxy) hydride ( Steps 2-4 to obtain Ru(η 5 -R CHeptD)(η 5 -NC 4 Me 4 ) from LiAl(O t Bu) 3 H);
“Ru(η 5 -R CHeptD)(η 5 -NC 4 Me 4 )” in step 2-4 is “Ru(η 5 -R-cycloheptadiene)(η 5 -2,3,4,5- tetramethylpyrrole),
R in steps 2-1 to 2-4 is a straight or branched alkyl group having 1 to 4 carbon atoms.
하기의 제조방법은, 본 발명의 다른 일실시예로서의 상기 화학식 1의 루테늄 유기금속화합물 중 R이 메틸기인 경우, 즉 Ru(η5-MeCHeptD)(η5-NC4Me4)의 구체적인 제조방법이다.The following production method is a specific production method of Ru(η 5 -Me CHeptD)(η 5 -NC 4 Me 4 ) when R is a methyl group in the ruthenium organometallic compound of Formula 1 as another embodiment of the present invention. am.
(단계 2-1)(Step 2-1)
(단계 2-2)(Step 2-2)
(단계 2-3)(Step 2-3)
(단계 2-4)(Steps 2-4)
본 발명의 루테늄 유기금속화합물은 신규한 화합물로서 열적 안정성이 우수하고, 100℃이하 또는 상온에서의 액체성으로 낮은 온도에서도 쉽게 양질의 루테늄 박막의 제조가 가능하여, 루테늄 박막의 제조공정에서 취급이 우수한 장점이 있다.The ruthenium organometallic compound of the present invention is a novel compound, has excellent thermal stability, and is liquid at 100°C or below or at room temperature, making it possible to easily produce high-quality ruthenium thin films even at low temperatures, making it easy to handle in the manufacturing process of ruthenium thin films. It has excellent advantages.
도 1은 본 발명 루테늄 유기금속화합물의 제조방법에 관한 실시예 1 중 단계 1의 생산물 NMR이다.
도 2는 본 발명 루테늄 유기금속화합물의 제조방법에 관한 실시예 1 중 단계 3의 생산물 NMR이다.
도 3은 본 발명 루테늄 유기금속화합물의 제조방법에 관한 실시예 1 중 단계 4의 생산물로서, 본 발명의 화학식 1 중 R이 수소인 루테늄 유기금속화합물인 Ru(η5-CHeptD)(η5-NC4Me4)의 NMR이다.
도 4는 본 발명 실시예 1의 루테늄 유기금속화합물인 Ru(η5-CHeptD)(η5-NC4Me4)의 TGA DATA이다.
도 5는 본 발명 실시예 1의 루테늄 유기금속화합물인 Ru(η5-CHeptD)(η5-NC4Me4)의 시차주사열량계(DSC)이다.
도 6은 본 발명 실시예 1의 루테늄 유기금속화합물인 Ru(η5-CHeptD)(η5-NC4Me4)의 X-ray 결정구조이다.
도 7은 본 발명 루테늄 유기금속화합물의 제조방법에 관한 실시예 2 중 단계 3의 생산물 중 isomer-1의 NMR이다.
도 8은 본 발명 루테늄 유기금속화합물의 제조방법에 관한 실시예 2 중 단계 3의 생산물 중 isomer-2의 NMR이다.
도 9는 본 발명 루테늄 유기금속화합물의 제조방법에 관한 실시예 2 중 단계 4의 생산물로서, 본 발명의 화학식 1 중 R이 메틸기인 루테늄 유기금속화합물인 isomer-1의 Ru(η5-MeCHeptD)(η5-NC4Me4)의 NMR이다.
도 10은 본 발명 루테늄 유기금속화합물의 제조방법에 관한 실시예 2 중 단계 4의 생산물로서, 본 발명의 화학식 1 중 R이 메틸기인 루테늄 유기금속화합물인 isomer-2의 Ru(η5-MeCHeptD)(η5-NC4Me4)의 NMR이다.
도 11은 본 발명 실시예 2의 루테늄 유기금속화합물(isomer 1 및 2의 혼합물)인 Ru(η5-MeCHeptD)(η5-NC4Me4)의 TGA DATA이다.
도 12는 본 발명 실시예 2의 루테늄 유기금속화합물인 Ru(η5-MeCHeptD)(η5-NC4Me4)(혼합물)의 고온에서의 시차주사열량계(DSC)이다.
도 13은 본 발명 실시예 1의 루테늄 유기금속화합물에 의하여 형성된 루테늄 박막을 나타낸 사진이다.
도 14는 종래 공지된 루테늄 유기금속화합물인 루덴스의 TGA DATA이다.
도 15는 종래 공지된 루테늄 유기금속화합물인 루덴스의 고온에서의 시차주사열량계(DSC)이다. Figure 1 shows NMR of the product of step 1 of Example 1 of the method for producing the ruthenium organometallic compound of the present invention.
Figure 2 is NMR of the product of step 3 in Example 1 of the method for producing the ruthenium organometallic compound of the present invention.
Figure 3 shows the product of step 4 in Example 1 of the method for producing the ruthenium organometallic compound of the present invention, Ru(η 5 -CHeptD)(η 5 - This is the NMR of NC 4 Me 4 ).
Figure 4 is TGA DATA of Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ), a ruthenium organometallic compound in Example 1 of the present invention.
Figure 5 is a differential scanning calorimetry (DSC) of Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ), a ruthenium organometallic compound in Example 1 of the present invention.
Figure 6 is an X-ray crystal structure of Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ), a ruthenium organometallic compound in Example 1 of the present invention.
Figure 7 is the NMR of isomer-1 in the product of step 3 of Example 2 of the method for producing the ruthenium organometallic compound of the present invention.
Figure 8 is the NMR of isomer-2 in the product of step 3 of Example 2 of the method for producing the ruthenium organometallic compound of the present invention.
Figure 9 shows the product of step 4 in Example 2 of the method for producing the ruthenium organometallic compound of the present invention, Ru(η 5 - Me CHeptD of isomer-1, a ruthenium organometallic compound in which R in Formula 1 of the present invention is a methyl group. )(η 5 -NC 4 Me 4 ) NMR.
Figure 10 shows the product of step 4 in Example 2 of the method for producing the ruthenium organometallic compound of the present invention, Ru(η 5 - Me CHeptD of isomer-2, a ruthenium organometallic compound in which R in Formula 1 of the present invention is a methyl group. )(η 5 -NC 4 Me 4 ) NMR.
Figure 11 is TGA DATA of Ru(η 5 -Me CHeptD)(η 5 -NC 4 Me 4 ), a ruthenium organometallic compound (mixture of isomers 1 and 2) of Example 2 of the present invention.
Figure 12 is a differential scanning calorimeter (DSC) at high temperature of Ru(η 5 -Me CHeptD)(η 5 -NC 4 Me 4 ) (mixture), a ruthenium organometallic compound in Example 2 of the present invention.
Figure 13 is a photograph showing a ruthenium thin film formed by the ruthenium organometallic compound of Example 1 of the present invention.
Figure 14 is the TGA DATA of Ludens, a conventionally known ruthenium organometallic compound.
Figure 15 is a differential scanning calorimeter (DSC) at high temperature of Ludens, a conventionally known ruthenium organometallic compound.
본 발명은, 하기의 화학식 1로 표시되는 루테늄 유기금속화합물에 관한 것이다. The present invention relates to a ruthenium organometallic compound represented by the following formula (1).
[화학식 1] [Formula 1]
상기 화학식 1 중 R은 수소; 또는 탄소수 1 내지 4의 직쇄 또는 분지쇄의 알킬기;이고, 바람직한 알킬기는 메틸기이다. In Formula 1, R is hydrogen; or a straight-chain or branched alkyl group having 1 to 4 carbon atoms; a preferred alkyl group is a methyl group.
본 발명의 상기 화학식 1로 표시되는 루테늄 유기금속화합물의 제조방법은 하기의 (a) 내지 (d)의 단계 1-1 내지 1-4를 포함한다. The method for producing the ruthenium organometallic compound represented by Formula 1 of the present invention includes steps 1-1 to 1-4 of (a) to (d) below.
(a) 염화루테늄 수화물 및 1,3,5-시클로헵타트리엔으로부터 디클로로(시클로헵타트리엔)루테늄(II)-다이머를 얻는 단계 1-1;(a) Step 1-1 of obtaining dichloro(cycloheptatriene)ruthenium(II)-dimer from ruthenium chloride hydrate and 1,3,5-cycloheptatriene;
(b) 상기 단계 1-1의 디클로로(시클로헵타트리엔)루테늄(II)-다이머와 은트리플루오로메탄술폰산염 (Ag(OTf))로부터 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머를 제조하는 단계 1-2; (b) Ditrifluoromethanesulfonate (cycloheptatriene) from dichloro(cycloheptatriene)ruthenium(II)-dimer and silver trifluoromethanesulfonate (Ag(OTf)) in step 1-1. Step 1-2 of preparing ruthenium (II)-dimer;
(c) 상기 단계 1-2의 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 및 2,3,4,5-tetramethylpyrrole로부터 트리플루오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II)을 제조하는 단계 1-3; 및 (c) Trifluoromethane sulfonate (cycloheptatriene) from ditrifluoromethanesulfonate (cycloheptatriene) ruthenium (II)-dimer and 2,3,4,5-tetramethylpyrrole in step 1-2 ) (2,3,4,5-tetramethylpyrrole) steps 1-3 for producing ruthenium (II); and
(d) 상기 단계 1-3의 트리플루오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) 및 lithium aluminum tri(t-butoxy) hydride (LiAl(OtBu)3H)로부터 Ru(η5-CHeptD)(η5-NC4Me4)을 얻는 단계 1-4;(d) trifluoromethanesulfonate (cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) and lithium aluminum tri (t-butoxy) hydride (LiAl) of steps 1-3 Steps 1-4 to obtain Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ) from (O t Bu) 3 H);
상기 단계 1-4의 Ru(η5-CHeptD) 및 (η5-2,3,4,5-NC4Me4)는 각각 Ru(η5-시클로헵타디엔) 및 (η5-2,3,4,5-테트라메틸피롤)이다.Ru(η 5 -CHeptD) and (η 5 -2,3,4,5-NC 4 Me 4 ) in steps 1-4 are Ru(η 5 -cycloheptadiene) and (η 5 -2,3, respectively) , 4,5-tetramethylpyrrole).
상기 (a) 내지 (d)의 단계 1-1 내지 1-4를 포함하는 본 발명 제조방법의 구체적인 일 실시예인 하기의 제조방법은 상기 화학식 1의 루테늄 유기금속화합물 중 R이 수소인 경우, 즉 Ru(η5-CHeptD)(η5-NC4Me4)의 구체적인 제조방법으로 하기 단계 1-1 내지 단계 1-4를 포함하는 제조방법이다.The following production method, which is a specific example of the production method of the present invention including steps 1-1 to 1-4 of (a) to (d), is when R in the ruthenium organometallic compound of Formula 1 is hydrogen, that is, A specific method for producing Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ) includes the following steps 1-1 to 1-4.
(단계 1-1)(Step 1-1)
(단계 1-2)(Step 1-2)
(단계 1-3)(Steps 1-3)
(단계 1-4)(Steps 1-4)
상기 본 발명의 일 실시예를 구체적으로 살펴보면 상기 단계 1-1에서는, 우선 염화루테늄 수화물(RuCl3.xH2O, 37%) 및 1,3,5-시클로헵타트리엔(1,3,5-cycloheptatriene, CHT)을 1차 용매에 용해한 후, 질소가스를 이용하여 상기 용매혼합물 내의 공기를 제거한다. 상기 공기가 제거된 용매혼합물을 환류 가열한 후 상온으로 냉각하고, 상기 용매혼합물 중 녹지 않는 고체를 가라앉히고, 상등액은 제거한다. 상기 고체에 2차 용매를 가하여 교반 후, 녹지 않는 고체를 가라앉히고, 다시 상등액은 케뉼라를 이용하여 제거한다. 상기 고체를 여과하고, 제2 용매로 세척한 후, 건조하여 갈색 고체의 단계 1-1의 생성물인 [Ru(CHT)Cl2]2 (Dichloro(cycloheptatriene)ruthenium(II)-dimer, 디클로로(시클로헵타트리엔)루테늄(II)-다이머)를 얻는다(도 1 참조). Looking specifically at an embodiment of the present invention, in step 1-1, first, ruthenium chloride hydrate (RuCl3.xH2O, 37%) and 1,3,5-cycloheptatriene (1,3,5-cycloheptatriene, After dissolving CHT) in the primary solvent, the air in the solvent mixture is removed using nitrogen gas. The solvent mixture from which the air has been removed is heated to reflux and then cooled to room temperature, the insoluble solid in the solvent mixture is allowed to settle, and the supernatant is removed. After adding a secondary solvent to the solid and stirring, the insoluble solid is allowed to settle, and the supernatant is removed using a cannula. The solid was filtered, washed with a second solvent, and dried to produce [Ru(CHT)Cl 2 ] 2 (Dichloro(cycloheptatriene)ruthenium(II)-dimer, the product of step 1-1 as a brown solid. Heptatriene) ruthenium (II) -dimer) is obtained (see Figure 1).
상기 단계 1-1에서 상기 염화루테늄 수화물(RuCl3.xH2O, 37%)에 대한 1,3,5-시클로헵타트리엔(1,3,5-cycloheptatriene, CHT)의 사용량은 1:2.1~1:2.4(몰비)이다. In step 1-1, the amount of 1,3,5-cycloheptatriene (CHT) used relative to the ruthenium chloride hydrate (RuCl3.xH2O, 37%) is 1:2.1 to 1: It is 2.4 (molar ratio).
상기 제1 용매는 알코올류이고, 바람직하게는 에탄올이며, 사용량은 상기 염화루테늄 수화물(RuCl3.xH2O, 37%) 및 1,3,5-시클로헵타트리엔(1,3,5-cycloheptatriene, CHT)의 전체 총 사용량(중량부)의 2 내지 10배이고, 바람직하게는 2 내지 6배이다. 상기 범위에서 반응 수율이 우수하다. The first solvent is an alcohol, preferably ethanol, and the amount used is ruthenium chloride hydrate (RuCl3.xH2O, 37%) and 1,3,5-cycloheptatriene (CHT). ) is 2 to 10 times the total amount (parts by weight) used, preferably 2 to 6 times. In the above range, the reaction yield is excellent.
상기 제2 용매는 상기 제1 용매보다 극성이 낮은 용매로서, 바람직하게는 에테르류이고, 더욱 바람직하게는 디에틸에테르이다.The second solvent is a solvent with lower polarity than the first solvent, and is preferably ether, more preferably diethyl ether.
상기 용매혼합물의 환류 가열시간은 60 내지 90시간이고, 바람직하게는 70시간 내지 90 시간이나, 상기 가열시간은 반응물의 사용량에 따라 결정될 수 있다. The reflux heating time of the solvent mixture is 60 to 90 hours, preferably 70 to 90 hours, but the heating time may be determined depending on the amount of reactant used.
상기 제2 용매에 의한 세척은 세척 후 제2 용매의 색이 무색이 될 때까지 반복하여 실시하며, 1회의 세척에 사용되는 제2 용매의 사용량은 사용된 제1 용매의 0.2 내지 0.3배(무게비)이다.Washing with the second solvent is repeated until the color of the second solvent becomes colorless after washing, and the amount of the second solvent used in one washing is 0.2 to 0.3 times the amount of the first solvent used (weight ratio) )am.
상기 단계 1-2는 상기 단계 1-1로부터 얻어진 디클로로(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)Cl2]2)로부터 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)(OTf)2]2)를 제조하는 단계이다. In step 1-2, ditrifluoromethane sulfonate (cycloheptatriene) is obtained from dichloro(cycloheptatriene)ruthenium(II)-dimer ([Ru(CHT)Cl 2 ] 2 ) obtained in step 1-1. ) This is the step of producing ruthenium (II)-dimer ([Ru(CHT)(OTf) 2 ] 2 ).
구체적으로 글로브 박스 내에서 상기 단계 1-1로부터 얻어진 디클로로(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)Cl2]2) 및 은트리플루오로메탄술폰산염 (Ag(OTf))을 반응 용기에서 혼합 후, 질소 하에서 상기 반응 용기에 제3 용매를 가하여 상기 반응물을 용해하여 상온에서 교반한다. Specifically, dichloro(cycloheptatriene)ruthenium(II)-dimer ([Ru(CHT)Cl 2 ] 2 ) and silver trifluoromethanesulfonate (Ag(OTf)) obtained from step 1-1 in the glove box. ) is mixed in a reaction vessel, then a third solvent is added to the reaction vessel under nitrogen to dissolve the reactant and stirred at room temperature.
교반이 끝난 후 반응 혼합물을 필터로 여과하여 남은 고체를 상기 제3 용매를 이용하여 세척한다. 상기 세척은 상기 제3 용매의 세척액이 무색이 될 때까지 실시한다, 세척이 끝난 고체의 여과물을 진공에서 건조하여 주갈색 고체로 단계 2의 생성물인 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 (Difluoromethanesulfonate(cycloheptatriene)ruthenium(II)-dimer, [Ru(CHT) (OTf)2]2)를 얻는다. After stirring is completed, the reaction mixture is filtered through a filter, and the remaining solid is washed using the third solvent. The washing is performed until the washing liquid of the third solvent becomes colorless. The washed solid filtrate is dried in vacuum to form a dark brown solid. N) Ruthenium(II)-dimer (Difluoromethanesulfonate(cycloheptatriene)ruthenium(II)-dimer, [Ru(CHT) (OTf) 2 ] 2 ) is obtained.
상기 단계 1-2에서 상기 디클로로(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)Cl2]2)에 대한 은트리플루오로메탄술폰산염 (Ag(OTf))의 사용량은 1:4.0~1:4.2(몰비)이다. In step 1-2, the amount of silver trifluoromethanesulfonate (Ag(OTf)) used for the dichloro(cycloheptatriene)ruthenium(II)-dimer ([Ru(CHT)Cl 2 ] 2 ) is 1. :4.0~1:4.2 (molar ratio).
상기 제3 용매는 물과 섞이지 않는 극성을 가진 용매이고, 바람직하게는 염화메틸렌(CH2Cl2)이며, 사용량은 상기 염화루테늄 수화물(RuCl3.xH2O, 37%) 및 1,3,5-시클로헵타트리엔(1,3,5-cycloheptatriene, CHT)의 전체 총 사용량(중량부)의 3 내지 10배이고, 바람직하게는 6 내지 10배이다. 상기 범위에서 반응 수율이 우수한다. The third solvent is a polar solvent that does not mix with water, and is preferably methylene chloride (CH 2 Cl 2 ), and the amount used is ruthenium chloride hydrate (RuCl3.xH2O, 37%) and 1,3,5-cyclo It is 3 to 10 times, preferably 6 to 10 times, the total amount (parts by weight) of heptatriene (1,3,5-cycloheptatriene, CHT). In the above range, the reaction yield is excellent.
상기 용매혼합물의 상온 교반 시간은 12시간 내지 36시간이고, 바람직하게는 20시간 내지 30시간이나, 상기 교반 시간에 한정되지 아니한다. 상기 교반 시간은 단계 2의 생성물인 착물의 형성이 완료될 때까지 진행될 수 있으며, 반응물의 사용량에 따라 결정될 수도 있다.The room temperature stirring time for the solvent mixture is 12 to 36 hours, preferably 20 to 30 hours, but is not limited to the above stirring time. The stirring time may proceed until the formation of the complex, which is the product of step 2, is completed, and may also be determined depending on the amount of reactant used.
상기 제3 용매에 의한 세척은 세척 후 제3 용매인 여과액의 색이 무색이 될 때까지 반복하여 실시한다.Washing with the third solvent is repeated until the filtrate, which is the third solvent, becomes colorless after washing.
상기 단계 1-3은 상기 단계 1-2로부터 얻어진 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)(OTf)2]2)로 부터 트리플루오로메탄술포네이트(시클로헵타트리엔)(테트라메틸피롤)루테늄(II) [Ru(CHT)(η5-NC4Me4)](OTf)를 제조하는 단계이다. Step 1-3 is from ditrifluoromethanesulfonate (cycloheptatriene) ruthenium (II) -dimer ([Ru(CHT)(OTf) 2 ] 2 ) obtained in step 1-2 to trifluoro. This is the step of producing methanesulfonate (cycloheptatriene) (tetramethylpyrrole) ruthenium (II) [Ru(CHT)(η 5 -NC 4 Me 4 )] (OTf).
구체적으로 상기 단계 1-2에서 얻어진 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)(OTf)2]2) 및 2,3,4,5-tetramethylpyrrole을 글로브 박스 내에서 각각의 반응 용기 1 및 2에 넣은 후, 상기 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)(OTf)2]2) 및 2,3,4,5-tetramethylpyrrole의 각각의 반응 용기 1 및 2를 글로브 박스로부터 꺼내어 질소 하에서 각각 제3 용매에 용해시킨다. 상기 제3 용매에 용해된 반응 용기 2의 2,3,4,5-tetramethylpyrrole를 케뉼라를 이용하여 상기 제3 용매에 용해된 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)(OTf)2]2)의 반응 용기 1로 이동시킨다. 이때 약간의 발열 반응이 관찰된다. 상기 반응 용기 1 및 2의 혼합물을 상온의 암실에서 교반한 후, 진공을 이용하여 혼합물 중의 제3 용매의 일부를 제거한다.Specifically, ditrifluoromethanesulfonate (cycloheptatriene) ruthenium (II) -dimer ([Ru(CHT)(OTf) 2 ] 2 ) and 2,3,4,5- obtained in steps 1-2 above. After putting tetramethylpyrrole into each reaction vessel 1 and 2 in the glove box, the ditrifluoromethanesulfonate (cycloheptatriene) ruthenium (II)-dimer ([Ru(CHT)(OTf) 2 ] 2 ) and 2,3,4,5-tetramethylpyrrole, respectively, were taken out from the glove box and dissolved in the third solvent under nitrogen. 2,3,4,5-tetramethylpyrrole from reaction vessel 2 dissolved in the third solvent was mixed with ditrifluoromethanesulfonate (cycloheptatriene)ruthenium(II) dissolved in the third solvent using a cannula. -Move the dimer ([Ru(CHT)(OTf) 2 ] 2 ) into reaction vessel 1. At this time, a slight exothermic reaction is observed. After the mixture of reaction vessels 1 and 2 is stirred in a dark room at room temperature, a portion of the third solvent in the mixture is removed using a vacuum.
상기 일부의 제3 용매가 제거된 잔류물을 중성 알루미나 및 1차 용리액을 이용하여 불순물을 제거한 후, 상기 중성 알루미나에 남아있는 생성물을 2차 용리액을 이용하여 용리된 용리액의 용매를 진공하에서 제거하여 끈적한 갈색 고체를 얻었다. 상기 끈적한 갈색 고체는 상기 제3 용매를 이용한 재결정으로 황갈색 고체의 트리플르오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) [Ru(CHT)(η5-NC4Me4)](OTf)을 얻는다(도 2 참조).After removing impurities from the residue from which part of the third solvent was removed using neutral alumina and a primary eluent, the solvent of the eluent was removed under vacuum to remove the product remaining in the neutral alumina using a secondary eluent. A sticky brown solid was obtained. The sticky brown solid was recrystallized using the third solvent to form a yellow-brown solid trifluoromethanesulfonate (cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) [Ru(CHT) (η 5 -NC 4 Me 4 )](OTf) is obtained (see Figure 2).
상기 단계 1-3에서 상기 (시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)(OTf)2]2)에 대한 2,3,4,5-tetramethylpyrrole의 사용량은 1:2.0~1:2.3(몰비)이다. In steps 1-3, the amount of 2,3,4,5-tetramethylpyrrole used for the (cycloheptatriene)ruthenium(II)-dimer ([Ru(CHT)(OTf) 2 ] 2 ) is 1:2.0~ The molar ratio is 1:2.3.
상기 제3 용매는 상기 단계 2의 용매와 동일한 것일 수 있으나, 필요에 따라 다른 용매를 사용할 수도 있다. The third solvent may be the same as the solvent in step 2, but other solvents may be used as needed.
상기 디트리플르오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)(OTf)2]2)의 반응 용기 1에 가하는 제3 용매의 양은 반응물인 디트리플르오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)(OTf)2]2) 사용량의 10 내지 40배(중량비)일 수 있다. 바람직하게는 20 내지 30배일 수 있으나, 상기 반응물의 사용량에 따라 결정될 수 있다. The amount of the third solvent added to reaction vessel 1 of the ditrifluoromethanesulfonate (cycloheptatriene) ruthenium (II)-dimer ([Ru(CHT)(OTf) 2 ] 2 ) is ditrifluoro, which is the reactant. The amount used may be 10 to 40 times (by weight) the amount of methanesulfonate (cycloheptatriene)ruthenium(II)-dimer ([Ru(CHT)(OTf) 2 ] 2 ). Preferably, it may be 20 to 30 times, but may be determined depending on the amount of the reactant used.
상기 2,3,4,5-tetramethylpyrrole의 반응 용기 2에 가하는 제3 용매의 양은 반응물인 2,3,4,5-tetramethylpyrrole 사용량의 10 내지 30배(중량비)일 수 있다. 바람직하게는 10 내지 25배일 수 있으나, 상기 반응물의 사용량에 따라 결정될 수 있다. The amount of the third solvent added to the 2,3,4,5-tetramethylpyrrole reaction vessel 2 may be 10 to 30 times (weight ratio) the amount of 2,3,4,5-tetramethylpyrrole used as a reactant. Preferably, it may be 10 to 25 times, but may be determined depending on the amount of the reactant used.
상기 반응 용기 2의 반응물을 반응 용기 1로 옮김에 걸리는 시간은 약 10분 내지 30분일 수 있으나, 반응물의 사용량에 따라 결정될 수 있다. 다만, 상기 옮김 시 약간의 발열 반응만이 관찰되는 시간 이내로 결정되어야 한다. The time taken to transfer the reactants from reaction vessel 2 to reaction vessel 1 may be about 10 to 30 minutes, but may be determined depending on the amount of reactants used. However, the transfer must be determined within a time period in which only a slight exothermic reaction is observed.
상기 암실에서의 교반 시간은 12시간 내지 36시간이고, 바람직하게는 20시간 내지 30시간이나, 반응물의 사용량에 따라서 교반 시간이 결정될 수 있다.The stirring time in the dark room is 12 to 36 hours, preferably 20 to 30 hours, but the stirring time may be determined depending on the amount of reactant used.
상기 반응 혼합물 중 제3 용매의 일부 제거는 상기 반응 용기 1 및 2에 사용된 제3 용매의 전체 사용량의 0.01 내지 0.2(중량비)를 남기는 정도로 진행된다.Partial removal of the third solvent in the reaction mixture is carried out to the extent of leaving 0.01 to 0.2 (weight ratio) of the total amount of the third solvent used in reaction vessels 1 and 2.
상기 1차 용리액은 에틸아세테이트 등이며, 2차 용리액은 CH2Cl2/MeCN의 혼합물을 사용한다. The first eluent is ethyl acetate, and the second eluent is a mixture of CH2Cl2/MeCN.
마지막으로, 상기 단계 1-4는 화학식 1의 본 발명의 루테늄 유기금속화합물 (R이 수소인 경우)인 Ru(η5-CHeptD)(η5-NC4Me4)을 얻는 단계로서, 상기 단계 1-3에서 얻어진 트리플루오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) [Ru(CHT)(η5-NC4Me4)](OTf) 및 lithium aluminum tri(t-butoxy) hydride (LiAl(OtBu)3H)를 글로브 박스 내에서 각각의 서로 다른 반응 용기에 위치시킨 후, 글로브 박스에서 꺼낸 상기 서로 다른 각각의 반응 용기에 질소 하에서 에테르 용매를 가하여 상기 트리플루오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) [Ru(CHT)(η5-NC4Me4)](OTf) 및 lithium aluminum tri(t-butoxy) hydride (LiAl(OtBu)3H)를 용해시킨다. Finally, steps 1-4 are steps for obtaining Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ), which is the ruthenium organometallic compound of the present invention of Formula 1 (when R is hydrogen), Trifluoromethanesulfonate (cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) obtained in 1-3 [Ru(CHT)(η 5 -NC 4 Me 4 )]( OTf) and lithium aluminum tri(t-butoxy) hydride (LiAl(O tBu ) 3 H) were placed in each different reaction vessel within the glove box, and then placed in each different reaction vessel taken out of the glove box. The trifluoromethanesulfonate (cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) [Ru(CHT) (η 5 -NC 4 Me 4 ) was obtained by adding an ether solvent under nitrogen. ](OTf) and lithium aluminum tri(t-butoxy) hydride (LiAl(O t Bu) 3 H) are dissolved.
상기 각각의 반응 용기 중 하나의 반응 용기에 위치한 lithium aluminum tri(t-butoxy) hydride (LiAl(OtBu)3H)를 케뉼라를 이용하여 상기 트리플루오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) [Ru(CHT)(η5-NC4Me4)](OTf)가 위치한 다른 반응 용기로 이동시킨다. 이때 약간의 발열 반응이 관찰된다. 상기 반응 용기의 혼합물을 상온에서 교반한 후, 진공을 이용하여 혼합물 중의 에테르 용매를 제거한다. 용매가 제거된 적색 고체를 제1 비극성 용매를 이용하여 추출하고, 상기 여과액을 알루미나를 통하여 여과시킨다. 상기 알루미나층은 상기 제1 비극성 용매를 이용하여 여과액이 무색이 될 때까지 세척하여 여과액을 얻는다. 상기 추출액 및 여과액의 제1 비극성 용매를 진공으로 제거 농축하여 얻어진 노란색의 고체를 최소한의 제2 비극성 용매에 녹여 -30℃ 이하, 바람직하게는 -40℃ 이하에서 재결정한 후, 얻어진 고체는 -60℃ 이하, 바람직하게는 -70℃ 이하의 상기 제2 비극성 용매로 세척 후 진공 건조하여 노란색의 본 발명 화학식 1의 루테늄 유기금속화합물(R이 수소인 경우)인 Ru(η5-CHeptD)(η5-NC4Me4)을 얻는다(도 3 참조). Lithium aluminum tri(t-butoxy) hydride (LiAl(O t Bu) 3 H) located in one of the reaction vessels above was reacted with the trifluoromethanesulfonate (cycloheptatriene) using a cannula. Transfer to another reaction vessel where (2,3,4,5-tetramethylpyrrole)ruthenium(II) [Ru(CHT)(η 5 -NC 4 Me 4 )](OTf) is located. At this time, a slight exothermic reaction is observed. After the mixture in the reaction vessel is stirred at room temperature, the ether solvent in the mixture is removed using vacuum. The red solid from which the solvent has been removed is extracted using a first non-polar solvent, and the filtrate is filtered through alumina. The alumina layer is washed using the first non-polar solvent until the filtrate becomes colorless to obtain a filtrate. The yellow solid obtained by removing and concentrating the first non-polar solvent of the extract and filtrate by vacuum is dissolved in a minimum second non-polar solvent and recrystallized at -30°C or lower, preferably -40°C or lower, and the obtained solid is - Washed with the second non-polar solvent at 60°C or lower, preferably -70°C or lower, and then vacuum dried to produce Ru(η 5 -CHeptD) (when R is hydrogen), a yellow ruthenium organometallic compound of Formula 1 of the present invention (when R is hydrogen). η 5 -NC 4 Me 4 ) is obtained (see Figure 3).
상기 단계 1-4에서 상기 트리플르오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) [Ru(CHT)(η5-NC4Me4)](OTf)에 대한 lithium aluminum tri(t-butoxy) hydride (LiAl(OtBu)3H)의 사용량은 1:1.1~1:1.2(몰비)이다. In steps 1-4, the trifluoromethanesulfonate (cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) [Ru(CHT) (η 5 -NC 4 Me 4 ) ] The amount of lithium aluminum tri(t-butoxy) hydride (LiAl(O t Bu) 3 H) used for (OTf) is 1:1.1 to 1:1.2 (molar ratio).
상기 에테르 용매는 당업계의 알려진 모든 에테를 용매일 수 있으며, 바람직하게는 THF이고, 또한, 극성이 유사한 다른 용매로 필요에 따라 변경사용할 수도 있다. The ether solvent may be any ether solvent known in the art, and is preferably THF. Additionally, other solvents with similar polarity may be used as needed.
상기 트리플르오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) [Ru(CHT)(η5-NC4Me4)](OTf)의 반응 용기에 가하는 에테르 용매의 양은 반응물인 트리플르오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) [Ru(CHT)(η5-NC4Me4)](OTf) 사용량의 10 내지 40배(중량비)일 수 있다. 바람직하게는 20 내지 30배(중량비)일 수 있으나, 상기 반응물의 사용량에 따라 결정될 수도 있다. Reaction of the trifluoromethanesulfonate (cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) [Ru(CHT) (η 5 -NC 4 Me 4 )] (OTf) The amount of ether solvent added to the container is the reactant trifluoromethanesulfonate (cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) [Ru(CHT) (η 5 -NC 4 Me 4 )] (OTf) may be 10 to 40 times the amount used (weight ratio). Preferably, it may be 20 to 30 times (weight ratio), but may also be determined depending on the amount of the reactant used.
상기 lithium aluminum tri(t-butoxy) hydride (LiAl(OtBu)3H)의 반응 용기에 가하는 에테르 용매의 양은 반응물인 lithium aluminum tri(t-butoxy) hydride (LiAl(OtBu)3H) 사용량의 10 내지 30배(중량비)일 수 있다. 바람직하게는 10 내지 25배일 수 있으나, 상기 반응물의 사용량에 따라 결정될 수도 있다. The amount of ether solvent added to the reaction vessel of lithium aluminum tri(t-butoxy) hydride (LiAl(O t Bu) 3 H) is the reactant, lithium aluminum tri(t-butoxy) hydride (LiAl(O t Bu) 3 H). It may be 10 to 30 times the amount used (weight ratio). Preferably, it may be 10 to 25 times, but may also be determined depending on the amount of the reactant used.
상기 하나의 반응 용기 반응물을 다른 반응 용기로 옮김에 걸리는 시간은 약 10분 내지 1시간일 수 있으며, 바람직하게는 20분 내지 40분일 수 있으나, 반응물의 사용량에 따라 결정될 수 있다. 다만, 상기 옮김 시 약한 발열 반응만이 관찰되는 시간 이내로 결정되어야 한다. The time taken to transfer the reactants from one reaction vessel to another reaction vessel may be about 10 minutes to 1 hour, preferably 20 minutes to 40 minutes, but may be determined depending on the amount of reactants used. However, the transfer must be determined within a time period in which only a mild exothermic reaction is observed.
상기 상온에서의 교반 시간은 1 내지 5시간이고, 바람직하게는 1 내지 3시간이나, 반응물의 사용량에 따라서 교반 시간이 결정될 수도 있다.The stirring time at room temperature is 1 to 5 hours, preferably 1 to 3 hours, but the stirring time may be determined depending on the amount of reactant used.
상기 제1 비극성 용매는 통상의 비극성 용매이고, 바람직하게는 핵산 (hexane)이다. 상기 제2 비극성 용매는 상기 제1 비극성 용매보다 극성이 낮은 용매이고, 바람직하게는 팬탄 (pantane)이다. The first non-polar solvent is a common non-polar solvent, and is preferably a nucleic acid (hexane). The second non-polar solvent is a solvent with lower polarity than the first non-polar solvent, and is preferably pantane.
상기 (i) 내지 (iv)의 단계 2-1 내지 2-4를 포함하는 본 발명 제조방법의 구체적인 다른 실시예인 하기의 제조방법은 상기 화학식 1의 루테늄 유기금속화합물 중 R이 메틸기인 경우, 즉 Ru(η5-MeCHeptD)(η5-NC4Me4)의 구체적인 제조방법이다.The following production method, which is another specific example of the production method of the present invention including steps 2-1 to 2-4 of (i) to (iv), is when R in the ruthenium organometallic compound of Formula 1 is a methyl group, that is, This is a specific manufacturing method of Ru(η 5 - Me CHeptD)(η 5 -NC 4 Me 4 ).
(단계 2-1)(Step 2-1)
(단계 2-2)(Step 2-2)
(단계 2-3)
(Step 2-3)
삭제delete
(단계 2-4)(Steps 2-4)
상기 단계 2-1 내지 2-4는 상기 본 발명 일 실시예 제조방법의 단계 1-1의 반응물인 ‘1,3,5-시클로헵타트리엔(1,3,5-cycloheptatriene, CHT)’을 ‘7-메틸-1,3,5-시클로헵타트리엔(7-methyl-1,3,5-cycloheptatriene, MeCHT)’로 바꾼 것을 제외하고는 단계 1-1 내지 단계 1-4와 동일하고, 다만 생성물 등과 같이 화합물의 차이에 의한 정제 방법 등은 차이가 있을 수 있다. In steps 2-1 to 2-4, '1,3,5-cycloheptatriene (CHT)', the reactant of step 1-1 of the production method of an embodiment of the present invention, is used. It is the same as steps 1-1 to 1-4 except that it is changed to '7-methyl-1,3,5-cycloheptatriene ( Me CHT)'. However, there may be differences in purification methods due to differences in compounds, such as products.
상기와 같이 본 발명 일 실시예 및 다른 일 실시예의 제조방법으로 제조되는 본 발명의 화학식 1로 표시되는 루테늄 유기금속화합물은 열적으로도 안정하고 또한, 상온에서 고체 또는 액체로서 좋은 휘발성을 가져 화학기상증착법 또는 원자층 증착법의 루테늄 박막 공정에 적합한 화합물이다(도 13 참조).As described above, the ruthenium organometallic compound represented by Chemical Formula 1 of the present invention, manufactured by the production method of one embodiment and another embodiment of the present invention, is thermally stable and has good volatility as a solid or liquid at room temperature, so it can be used in chemical vapors. It is a compound suitable for the ruthenium thin film process using vapor deposition or atomic layer deposition (see Figure 13).
본 발명은 하기의 실시예에 의하여 보다 더 잘 이해할 수 있으며, 하기의 실시예는 본 발명의 예시 목적을 위한 것이며 첨부된 특허청구범위에 의하여 한정되는 보호 범위를 제한하고자 하는 것은 아니다. The present invention can be better understood by the following examples, which are for illustrative purposes only and are not intended to limit the scope of protection defined by the appended claims.
또한, 본 발명은 하기의 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어나지 않는 범위에서 다양한 변형된 실시가 가능하다. In addition, the present invention is not limited to the following examples, and various modifications are possible without departing from the gist of the present invention as claimed in the claims.
실시예 1: Ru(ηExample 1: Ru(η 55 -CHeptD)(η-CHeptD)(η 55 -NC-NC 44 MeMe 44 )의 제조)Manufacture of
상기 본 발명의 화학식 1 중 R이 수소인 경우의 Ru(η5-CHeptD)(η5-NC4Me4)은 하기 단계 1-1 내지 1-4의 단계로부터 얻어진다. Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ) when R in Formula 1 of the present invention is hydrogen is obtained from steps 1-1 to 1-4 below.
<단계 1-1: 디클로로(시클로헵타트리엔)루테늄(II)-다이머 ([Ru(CHT)Cl<Step 1-1: Dichloro(cycloheptatriene)ruthenium(II)-dimer ([Ru(CHT)Cl 22 ]] 22 의 제조>Manufacturing>
RuCl3.xH2O (37% Ru, 250.0g, 0.915 mol)과 cycloheptatriene (222g, 250mL, 2.41 mol)을 플라스크에 채우고 ethanol (2.5L)에 용해시킨 후 N2 기체를 이용하여 용액을 20분 동안 버블링 한다. 혼합물을 72시간 동안 환류 가열한다. 실온으로 냉각 후, 교반을 중단하여 녹지 않은 고체가 플라스크 바닥에 가라 앉도록 한다. 케뉼라를 이용하여 용액 부분을 제거한다. 고체가 있는 플라스크에 diethyl ether (500mL)를 채우고 수 분간 교반 한 다음, 교반을 중단하여 녹지 않은 고체를 다시 가라앉히고, 다시 케뉼라를 사용하여 용액을 제거한다. 플라스크에 diethyl ether (500mL)를 채운 후 유리필터를 통해 용액을 여과하고 세척액이 완전히 무색이 될 때까지 diethyl ether로 남아있는 고체를 세척한다. 얻은 고체를 진공을 통해 완전히 건조하여 갈색 고체의 표제 화합물 [Ru(CHT)Cl2]2 (235g, 98%)을 수득하였다. RuCl3.xH2O (37% Ru, 250.0g, 0.915 mol) and cycloheptatriene (222g, 250mL, 2.41 mol) were filled in a flask, dissolved in ethanol (2.5L), and the solution was bubbled for 20 minutes using N 2 gas. do. The mixture is heated to reflux for 72 hours. After cooling to room temperature, stop stirring to allow the undissolved solid to settle to the bottom of the flask. Remove part of the solution using a cannula. Fill the flask with the solid with diethyl ether (500 mL) and stir for several minutes, then stop stirring to allow the undissolved solid to settle again, and remove the solution again using the cannula. After filling the flask with diethyl ether (500mL), filter the solution through a glass filter and wash the remaining solid with diethyl ether until the washing solution becomes completely colorless. The obtained solid was completely dried under vacuum to obtain the title compound [Ru(CHT)Cl 2 ] 2 (235 g, 98%) as a brown solid.
1H-NMR (CF3COOD): 6.62 (2Ha, mult), 5.21 (2Hb, mult), 4.30 (2Hc, mult), 3.17 (1Hd, mult), 1.00 (1He, mult). 1 H-NMR (CF 3 COOD): 6.62 (2H a , mult), 5.21 (2H b , mult), 4.30 (2H c , mult), 3.17 (1H d , mult), 1.00 (1H e , mult).
상기 단계 1-1로부터 얻어진 표제 화합물의 NMR data는 도 1에서 나타내고 있다. The NMR data of the title compound obtained from step 1-1 is shown in Figure 1.
<단계 1-2: [Ru(CHT)(OTf)<Step 1-2: [Ru(CHT)(OTf) 22 ]] 22 의 제조>Manufacturing>
글로브 박스 내에서 [Ru(CHT)Cl2]2 (243.3g, 0.461 mol)와 Ag(OTf) (458.2g, 1.89 mol)을 플라스크에 채우고 세텀으로 막은 후 플라스크를 글로브 박스에서 꺼낸다. N2 기체 하에서 플라스크에 Dichloromethane (4L)을 넣어 용해시키고 실온에서 24시간 교반한다(이때 주황색/갈색 용액에 회색 고체가 형성된다). 교반을 끝낸 후 반응 혼합물을 celite 필터를 통해 여과하고 여과액이 무색으로 될 때까지 DCM (Dichloromethane)을 이용하여 celite를 세척한다. 감압 증류를 통해 휘발성 물질을 제거한다. 이렇게 얻은 고체를 진공을 통해 완전히 건조하여 주갈색 고체인 표제 화합물 [Ru(CHT)(OTf)2]2 (310g, 70%)을 수득하였다. In the glove box, fill the flask with [Ru(CHT)Cl 2 ] 2 (243.3 g, 0.461 mol) and Ag(OTf) (458.2 g, 1.89 mol), block it with a septum, and remove the flask from the glove box. Dichloromethane (4L) was dissolved in a flask under N 2 gas and stirred at room temperature for 24 hours (at this time, a gray solid was formed in the orange/brown solution). After finishing stirring, the reaction mixture is filtered through a celite filter, and the celite is washed with DCM (Dichloromethane) until the filtrate becomes colorless. Volatile substances are removed through reduced pressure distillation. The solid thus obtained was completely dried under vacuum to obtain the title compound [Ru(CHT)(OTf) 2 ] 2 (310 g, 70%) as a dark brown solid.
1H-NMR 분석을 통해 출발 물질이 소비되어 다른 화합물로 전환되었음을 확인하였다. 추가적인 정제 과정은 거치지 않는다. 1 H-NMR analysis confirmed that the starting material was consumed and converted to another compound. No additional purification process is performed.
<단계 1-3: [Ru(CHT)(η<Step 1-3: [Ru(CHT)(η 55 -NC-NC 44 MeMe 44 )](OTf)의 제조> )]Manufacture of (OTf)>
글로브 박스 내에서 [Ru(CHT)(OTf)2]2 (50.0g, 50.9 mmol)를 플라스크에 넣은 후, 플라스크를 글로브 박스에서 꺼내고 N2 기체 하에서 dichloromethane (800mL)를 넣어 용해시킨다(용기 1). 글로브 박스 내에서 다른 플라스크에 2,3,4,5-tetramethylpyrolle (12.9g, 104.3 mmol)를 채우고 역시 글로브 박스에서 꺼낸 후 DCM (150mL)에 용해시킨다(용기 2). 상기 용기 2의 용액을 케뉼라를 이용하여 15분에 걸쳐 용기 1로 옮겨 담은 후(이때 약한 발열 반응이 관찰됨), 용기 1 및 2의 혼합물을 상온의 암실에서 24시간 교반한다. 진공을 이용하여 휘발성 물질을 제거하여 용액이 약 100mL가 남을 때까지 진행한다. Ethyl acetate를 용리액으로 사용하여 짧은 중성 알루미나 컬럼을 통해 불순물(Rf=0.7, 0.9)을 제거한다. 알루미나에 남아있는 생성물은 DCM (Dichloromethane)/MeCN (Acetonitrile) (v/v 2:1) 용액을 이용하여 용리시킨다. 휘발성 물질을 진공 하에 제거하여 끈적끈적한 갈색 고체를 얻었다. 얻어진 고체를 DCM에 용해시킨 후 다시 건조 시키는 과정을 여러 번 진행하여 황갈색 고체의 표제 화합물 [Ru(CHT)(η5-NC4Me4)](OTf) (38g, 80%)를 수득하였다. 1H-NMR분석을 통해 원하던 생성물임을 확인하였다. In the glove box, add [Ru(CHT)(OTf) 2 ] 2 (50.0 g, 50.9 mmol) to the flask, then remove the flask from the glove box and dissolve it in dichloromethane (800 mL) under N 2 gas (Container 1). . Inside the glove box, fill another flask with 2,3,4,5-tetramethylpyrolle (12.9 g, 104.3 mmol), remove it from the glove box, and dissolve it in DCM (150 mL) (container 2). The solution in container 2 was transferred to container 1 over 15 minutes using a cannula (at this time, a mild exothermic reaction was observed), and then the mixture of containers 1 and 2 was stirred in a dark room at room temperature for 24 hours. Remove volatile substances using vacuum and proceed until approximately 100 mL of solution remains. Using ethyl acetate as an eluent, impurities (R f =0.7, 0.9) are removed through a short neutral alumina column. The product remaining in the alumina is eluted using DCM (Dichloromethane)/MeCN (Acetonitrile) (v/v 2:1) solution. The volatiles were removed under vacuum to give a sticky brown solid. The obtained solid was dissolved in DCM and then dried again to obtain the title compound [Ru(CHT)(η 5 -NC 4 Me 4 )](OTf) (38g, 80%) as a yellow-brown solid. 1 It was confirmed that it was the desired product through H-NMR analysis.
1H-NMR (CDCl3): 6.55 (2Ha, mult), 5.35 (2Hb, mult), 3.59 (2Hc, mult), 3.02 (1Hd, mult), 2.10 (6He, s), 1.95 (6Hf, s), 1.02 (1Hg, mult). 1H -NMR (CDCl 3 ): 6.55 (2H a , mult), 5.35 (2H b , mult), 3.59 (2H c , mult), 3.02 (1H d , mult), 2.10 (6H e , s), 1.95 (6H f , s), 1.02 (1H g , mult).
상기 <단계 1-3>으로부터 얻어진 표제 화합물에 대한 NMR data는 도 2에서 나타내고 있다.NMR data for the title compound obtained from <Step 1-3> is shown in Figure 2.
<단계 1-4: Ru(η<Step 1-4: Ru(η 55 -CHeptD)(η-CHeptD)(η 55 -NC-NC 44 MeMe 44 )의 제조> )Manufacture>
글로브 박스 내에서 [Ru(CHT)(η5-NC4Me4)](OTf) (30.0g, 64.6 mmol)를 플라스크에 넣은 후 글로브 박스에서 꺼내어 N2 기체 하에서 THF (800mL)를 넣어 용해시킨다(용기 1). LiAl(OtBu)3H (18.1g, 71.1 mmol)도 역시 글로브 박스 내에서 플라스크에 넣은 후 N2 기체 하에서 THF (400mL)에 용해시킨다(용기 2). 상기 용기 2의 용액을 케뉼라를 통해 용기 1에 30분에 걸쳐 옮기고 (이때 약한 발열 반응 관찰), 용기 1 및 2의 혼합물을 2시간 동안 상온에서 교반한다. 교반을 끝낸 후 휘발성 물질(용매)을 진공을 통해 제거한다. 남아있는 적색 고체를 뜨거운 hexane을 이용하여 추출하고 짧은 알루미나 층(1~2cm)에 여과한다. 세척액이 무색이 될 때까지 알루미나 층을 hexane으로 씻어준다. 여과액을 진공을 통하여 농축한다. 얻어진 노란색 고체를 최소한의 pentane을 사용하여 용해하고 -40oC에서 재결정을 한다. 얻어진 결정을 필터를 이용하여 여과하고 -70oC로 냉각된 pentane을 사용하여 씻어준다. 얻은 고체를 진공으로 완전건조하여 표제 화합물 Ru(η5-CHeptD)(η5-NC4Me4) (4g, 20%)를 수득하였다. [Ru(CHT)(η 5 -NC 4 Me 4 )](OTf) in the glove box (30.0 g, 64.6 mmol) was placed in a flask, taken out of the glove box, and dissolved in THF (800 mL) under N 2 gas (container 1). LiAl(O tBu ) 3 H (18.1 g, 71.1 mmol) was also added to the flask in the glove box and then dissolved in THF (400 mL) under N 2 gas (container 2). The solution in vessel 2 was transferred to vessel 1 via a cannula over 30 minutes (at this time, a mild exothermic reaction was observed), and the mixture in vessels 1 and 2 was stirred at room temperature for 2 hours. After finishing stirring, volatile substances (solvent) are removed through vacuum. The remaining red solid is extracted using hot hexane and filtered through a short alumina layer (1 to 2 cm). Wash the alumina layer with hexane until the washing solution becomes colorless. The filtrate is concentrated via vacuum. The obtained yellow solid is dissolved using a minimum amount of pentane and recrystallized at -40 o C. The obtained crystals are filtered using a filter and washed with pentane cooled to -70 o C. The obtained solid was completely dried in vacuum to obtain the title compound Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ) (4g, 20%).
1H-NMR분석을 통해 노란색 결정이 원하던 생성물임을 확인하였다. 1 Through H-NMR analysis, it was confirmed that the yellow crystal was the desired product.
1H-NMR (CDCl3): 5.29 (1Ha, mult), 4.36 (2Hb, mult), 3.35 (2Hc, mult), 2.01 (6Hd, s), 1.97 (6He, s), 1.72 (2Hf, mult), 1.06 (2Hg, mult). OneH-NMR (CDCl3): 5.29 (1Ha, mult), 4.36 (2Hb, mult), 3.35 (2Hc, mult), 2.01 (6Hd, s), 1.97 (6He, s), 1.72 (2Hf, mult), 1.06 (2Hg, mult).
상기 얻어진 표제 화합물인 본 발명 화학식 1의 화합물(R이 수소인 경우)에 대한 NMR data는 도 3에서 나타내고 있다.NMR data for the obtained title compound, the compound of formula 1 of the present invention (when R is hydrogen), is shown in FIG. 3.
실시예 2: Ru(ηExample 2: Ru(η 55 -- MeMe CHeptD)(ηCHeptD)(η 55 -NC-NC 44 MeMe 44 )의 제조)Manufacture of
상기 본 발명의 화학식 1 중 R이 메틸기인 경우의 Ru(η5-MeCHeptD)(η5-NC4Me4)은 하기 단계 2-1 내지 2-4의 단계로부터 얻어진다. Ru(η 5 -Me CHeptD)(η 5 -NC 4 Me 4 ), in which R in Formula 1 of the present invention is a methyl group, is obtained from steps 2-1 to 2-4 below.
<단계 2-1: [Ru(<Step 2-1: [Ru( MeMe CHT)ClCHT)Cl 22 ]] 22 의 제조>Manufacturing>
RuCl3.xH2O (37% Ru, 47.0g, 172 mmol)과 7-methylcycloheptatriene (67.6g, 637 mmol)을 플라스크에 채우고 ethanol (500mL)에 용해시킨 후 N2 기체를 이용하여 용액을 20분 동안 버블링 한다. 혼합물을 72시간 동안 환류 가열하고 실온으로 냉각 후, 교반을 중단하여 녹지 않은 고체가 플라스크 바닥에 가라 앉도록 한다. 케뉼라를 이용하여 용액 부분을 제거한다. 고체가 있는 플라스크에 diethyl ether (100mL)를 채우고 수 분 동안 교반 한 다음, 교반을 중단하여 녹지 않은 고체를 다시 가라앉힌다. 다시 케뉼라를 사용하여 용액을 제거한다. 플라스크에 diethyl ether (100mL)를 채운 후 유리필터를 통해 용액을 여과하고 세척액이 완전히 무색이 될 때까지 diethyl ether로 남아있는 고체를 세척한다. 얻은 고체를 진공을 통해 완전히 건조하여 황갈색 고체의 표제 화합물 [Ru(MeCHT)Cl2]2 (35.0g, 73%)을 수득하였다.RuCl3.xH2O (37% Ru, 47.0g, 172 mmol) and 7-methylcycloheptatriene (67.6g, 637 mmol) were filled in a flask, dissolved in ethanol (500mL), and the solution was bubbled for 20 minutes using N 2 gas. do. The mixture was heated to reflux for 72 hours and cooled to room temperature, then stirring was stopped to allow the undissolved solid to settle to the bottom of the flask. Remove part of the solution using a cannula. Fill the flask with the solid with diethyl ether (100 mL) and stir for several minutes, then stop stirring to allow the undissolved solid to settle again. Remove the solution again using the cannula. After filling the flask with diethyl ether (100mL), filter the solution through a glass filter and wash the remaining solid with diethyl ether until the washing solution becomes completely colorless. The obtained solid was completely dried through vacuum to obtain the title compound [Ru( Me CHT)Cl 2 ] 2 (35.0 g, 73%) as a yellow-brown solid.
1H-NMR 분석을 통하여 해당 화합물이 이성질체의 혼합물임을 확인하였다. 1 Through H-NMR analysis, it was confirmed that the compound was a mixture of isomers.
상기 혼합물의 NMR : 1H-NMR (CDCl3): 6.51 (CH, s), 6.37 (CH, mult), 5.13 (CH, s), 5.06 (CH, mult), 4.90 (CH, mult), 4.15 (CH, bs), 3.87 (CH, s), 3.05 (CH2, mult), 2.83 (CH2, mult), 2.51 (CH3, s), 1.96 (CH3, s), 1.49 (CH3, d), 1.31 (CH2, mult), 0.98 (CH2, mult).NMR of the mixture: 1 H-NMR (CDCl 3 ): 6.51 (CH, s), 6.37 (CH, mult), 5.13 (CH, s), 5.06 (CH, mult), 4.90 (CH, mult), 4.15 (CH, bs), 3.87 (CH , s), 3.05 (CH 2 , mult), 2.83 (CH 2 , mult), 2.51 (CH 3 , s), 1.96 (CH 3 , s), 1.49 (CH 3 , d), 1.31 (CH 2 , mult) ), 0.98 (CH 2 , mult).
<단계 2-2: : [Ru(<Step 2-2: : [Ru( MeMe CHT)(OTf)CHT)(OTf) 22 ]] 22 의 제조>Manufacturing>
글로브 박스 내에서 [Ru(MeCHT)Cl2]2 (30.8g, 55.4 mmol)와 Ag(OTf) (58.3g, 227 mmol) 을 플라스크에 채우고 세텀으로 막은 후 플라스크를 글로브 박스에서 꺼낸다. N2 기체하에서 플라스크에 Dichloromethane (600mL)을 넣어 용해시키고 실온에서 24시간 교반한다. 이때 주황색/갈색 용액에 회색 고체가 형성된다. 교반을 끝낸 후 반응 혼합물을 celite 필터를 통해 여과하고 여과액이 무색이 될 때까지 DCM (Dichloromethane)을 이용하여 celite를 세척하여 여과액을 모은다. 상기 모은 여과액을 감압 증류를 통해 휘발성 물질을 제거하여 얻은 고체를 진공에서 완전히 건조하여 주갈색 고체인 표제 화합물 [Ru(MeCHT)(OTf)2]2 (53.5g, 96%)을 수득하였다. 추가적인 정제 과정은 거치지 않고 다음 단계인 단계 2-3에 사용하였다. In the glove box, [Ru( Me CHT)Cl 2 ] 2 (30.8 g, 55.4 mmol) and Ag(OTf) (58.3 g, 227 mmol) were filled into the flask, blocked with a septum, and the flask was taken out of the glove box. Dissolve Dichloromethane (600mL) in the flask under N 2 gas and stir at room temperature for 24 hours. At this point, a gray solid is formed in the orange/brown solution. After finishing stirring, the reaction mixture is filtered through a celite filter, and the celite is washed with DCM (Dichloromethane) until the filtrate becomes colorless, and the filtrate is collected. The collected filtrate was subjected to reduced pressure distillation to remove volatile substances, and the obtained solid was completely dried in vacuum to obtain the title compound [Ru( Me CHT)(OTf) 2 ] 2 (53.5 g, 96%) as a dark brown solid. . It was used in the next step, steps 2-3, without any additional purification process.
<단계 2-3: Ru(<Step 2-3: Ru( MeMe CHT)(ηCHT)(η 55 -NC-NC 44 MeMe 44 )](OTf)의 제조>)]Manufacture of (OTf)>
글로브 박스 내에서 [Ru(MeCHT)(OTf)2]2 (53.5g, 52.9 mmol)를 플라스크에 넣은 후, 플라스크를 글로브 박스에서 꺼내고 N2 기체하에서 DCM (dichloromethane) (500mL)를 넣어 용해시킨다(용기 1). 글로브 박스 내에서 다른 플라스크에 2,3,4,5-tetramethylpyrrole (13.4g, 108 mmol)를 채우고 역시 글로브 박스에서 꺼낸 후 DCM (150 mL)에 용해시킨다(용기 2). 용기 2의 용해액을 케뉼라를 이용하여 15분에 걸쳐 용기 1로 옮겨 담은 후 (약한 발열 반응이 관찰 됨), 상기 용기 1 및 2의 혼합물을 상온의 암실에서 24시간 교반한다. 진공을 이용하여 휘발성 물질(용매)을 제거하고, 용액이 대략 100mL가 남을 때까지 진행한다. Ethyl acetate를 용리액으로 사용하여 짧은 중성 알루미나 컬럼을 통해 불순물을 제거하고, 알루미나에 남아있는 생성물은 MeCN (acetonitrile)를 이용하여 용리시킨다. 휘발성 물질(용매)을 진공 하에 제거하여 끈적끈적한 갈색 고체를 얻었다. 얻어진 고체를 DCM에 용해시킨 후 다시 건조 시키는 과정을 여러 번 진행하여 적갈색 고체의 표제 화합물 [Ru(MeCHT)(η5-NC4Me4)](OTf) (30.6g, 60%)를 수득하였다. In the glove box, add [Ru( Me CHT)(OTf) 2 ] 2 (53.5 g, 52.9 mmol) to the flask, then remove the flask from the glove box and add DCM (dichloromethane) (500 mL) under N 2 gas to dissolve it. (Container 1). Inside the glove box, fill another flask with 2,3,4,5-tetramethylpyrrole (13.4 g, 108 mmol), remove it from the glove box, and dissolve it in DCM (150 mL) (container 2). The solution in container 2 was transferred to container 1 over 15 minutes using a cannula (a weak exothermic reaction was observed), and then the mixture of containers 1 and 2 was stirred in a dark room at room temperature for 24 hours. Remove volatile substances (solvent) using vacuum and proceed until approximately 100 mL of solution remains. Using ethyl acetate as an eluent, impurities are removed through a short neutral alumina column, and the product remaining in the alumina is eluted using MeCN (acetonitrile). The volatile material (solvent) was removed under vacuum to obtain a sticky brown solid. The obtained solid was dissolved in DCM and dried again to obtain the title compound [Ru( Me CHT)(η 5 -NC 4 Me 4 )](OTf) (30.6g, 60%) as a reddish-brown solid. did.
H-NMR분석을 통해 얻어진 화합물이 이성질체 혼합물임을 확인하였다. 상기 이성질체의 혼합물은 실리카겔 컬럼 크로마토그래피를 통한 정제(DCM/MeCN = 2:1 및 MeCN = 100%)를 진행하여 두 가지의 이성질체 화합물을 얻었다((도 7 및 8 참조).Through H-NMR analysis, it was confirmed that the obtained compound was a mixture of isomers. The mixture of the isomers was purified through silica gel column chromatography (DCM/MeCN = 2:1 and MeCN = 100%) to obtain two isomer compounds (see FIGS. 7 and 8).
<단계 2-4: Ru(η<Step 2-4: Ru(η 55 -- MeMe CHeptD)(ηCHeptD)(η 55 -NC-NC 44 MeMe 44 )의 제조>)Manufacture>
글로브 박스 내에서 [Ru(MeCHT)(η5-NC4Me4)](OTf) (20.0g, 41.8 mmol)를 플라스크에 넣은 후 글로브 박스에서 꺼내어 N2 기체하에서 THF (450mL)를 넣어 용해시킨다(용기 1). LiAl(OtBu)3H (11.7g, 46.0 mmol)도 역시 글로브 박스 내에서 플라스크에 넣은 후 N2 기체하에서 THF (150mL)에 용해시킨다(용기 2). 상기 용기 2의 용액을 케뉼라를 통해 용기 1에 30분에 걸쳐 옮기고 (약한 발열 반응 관찰), 상기 용기 1 및 2의 혼합물을 2시간 동안 상온에서 교반한다. 교반을 끝낸 후 휘발성 물질(용매)을 진공을 통해 제거한다. 남아있는 적색 유성 고체를 hexane을 이용하여 추출하고 짧은 알루미나 층 (1~2cm)에 여과한다. 세척액이 무색이 될 때까지 알루미나 층을 hexane으로 세척준다. 여과액을 진공을 통하여 농축하여 생성된 적색 액체를 증류장치로 옮기고 고진공(p<0.001 torr)에서 증류하여 노란색 액체의 표제 화합물 Ru(η5-MeCHeptD)(η5-NC4Me4) (5.8g, 42%)을 수득하였다. [Ru( Me CHT)(η 5 -NC 4 Me 4 )](OTf) in the glove box (20.0 g, 41.8 mmol) was placed in a flask, taken out of the glove box, and dissolved in THF (450 mL) under N2 gas (container 1). LiAl(O tBu ) 3 H (11.7 g, 46.0 mmol) was also added to the flask in the glove box and then dissolved in THF (150 mL) under N 2 gas (container 2). The solution in vessel 2 was transferred to vessel 1 via cannula over 30 minutes (observation of a mild exothermic reaction), and the mixture in vessels 1 and 2 was stirred at room temperature for 2 hours. After finishing stirring, volatile substances (solvent) are removed through vacuum. The remaining red oily solid is extracted using hexane and filtered through a short alumina layer (1 to 2 cm). Wash the alumina layer with hexane until the washing solution becomes colorless. The red liquid produced by concentrating the filtrate through vacuum was transferred to a distillation device and distilled in high vacuum (p<0.001 torr) to produce the title compound Ru(η 5 - Me CHeptD)(η 5 -NC 4 Me 4) (η 5 -NC 4 Me 4 ) as a yellow liquid. 5.8g, 42%) was obtained.
1H-NMR 분석을 통해 생성물이 이성질체 혼합물임을 확인하였으며, 이 혼합물의 b.p.는 80℃(0.001 torr)이었다. 1 H-NMR analysis confirmed that the product was an isomer mixture, and the bp of this mixture was 80°C (0.001 torr).
상기 이성질체 혼합물은 실리카겔 컬럼 크로마토그래피를 통한 정제(hexane/ethyl acetate = 4:1)를 진행하여 두 가지의 이성질체 화합물을 얻었다(도 9 및 도 10 참조).The isomer mixture was purified through silica gel column chromatography (hexane/ethyl acetate = 4:1) to obtain two isomer compounds (see Figures 9 and 10).
실시예 3: 루테늄 화합물의 열중량 분석 시험Example 3: Thermogravimetric analysis test of ruthenium compounds
상기 실시예 1의 본 발명 화학식 1 (R=H)로 표시되는 루테늄 유기금속화합물인 Ru(η5-CHeptD)(η5-NC4Me4), 및 실시예 2의 본 발명 화학식 1 (R=Me)로 표시되는 루테늄 유기금속화합물인 Ru(η5-MeCHeptD)(η5-NC4Me4)를 각각 TGA (thermogravimetric analysis)법을 이용하여 분석하였다. 상기 TGA 시험에서는 시험물을 10℃/분의 속도로 500℃까지 승온시키면서 분석하였으며, TGA 그래프 및 결과는 각각 도 4와 도 11, 그리고 하기 표 1에서 나타내고 있다. Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ), a ruthenium organometallic compound represented by the formula 1 (R=H) of the invention in Example 1, and Formula 1 (R) of the invention of Example 2 =Me), a ruthenium organometallic compound, Ru(η 5 - Me CHeptD)(η 5 -NC 4 Me 4 ), was analyzed using TGA (thermogravimetric analysis). In the TGA test, the test specimen was analyzed while raising the temperature to 500°C at a rate of 10°C/min, and the TGA graph and results are shown in Figures 4 and 11, respectively, and Table 1 below.
(본 발명 화학식 1의
R이 수소인 경우)Compound of Example 1
(of the present invention Formula 1
When R is hydrogen)
(본 발명 화학식 1의
R이 메틸기인 경우)Compound of Example 2
(of the present invention Formula 1
When R is a methyl group)
(Rudense)Previously known compounds
(Rudense)
상기 표 1 및 도 4와 도 11의 TGA 그래프로부터 본 발명 실시예 1 및 2의 신규 합성된 화학식 1의 루테늄 유기금속화합물은 중량이 반으로 감소하는 온도(T1/2℃)가 도 14에서 나타내고 있는 종래에 루테늄 박막의 전구체로 공지된 화합물인 Rudense 보다 월등히 높은 온도를 나타내고 있다(도 4, 도 11, 및 도 14 참조). From Table 1 and the TGA graphs of FIGS. 4 and 11, the newly synthesized ruthenium organometallic compound of Formula 1 in Examples 1 and 2 of the present invention has a temperature (T 1/2 ℃) at which its weight is reduced by half in FIG. 14. It shows a much higher temperature than Rudense, a compound known conventionally as a precursor for ruthenium thin films (see FIGS. 4, 11, and 14).
또한, 본 발명 실시예 1 및 2의 신규 합성된 화학식 1의 루테늄 유기금속화합물은 Residual Mass 값이 비교예 보다 월등히 적은 양을 나타내는 것으로 보아, 본 발명 화학식 1 및 2의 루테늄 유기금속화합물은 비교예의 루테늄 화합물인 Rudense에 비하여 열적 안정성이 향상된 루테늄 화합물임을 알 수 있다.In addition, the newly synthesized ruthenium organometallic compounds of Chemical Formula 1 of Examples 1 and 2 of the present invention appear to have a Residual Mass value significantly lower than that of the Comparative Example, so the ruthenium organometallic compounds of Chemical Formulas 1 and 2 of the present invention are those of the Comparative Example. It can be seen that it is a ruthenium compound with improved thermal stability compared to Rudense, a ruthenium compound.
이러한 높은 열적 안정성으로 인하여 본 발명 화학식 1의 루테늄 유기금속화합물은 저온뿐만 아니라, 고온의 증착 공정에서도 안정적으로 루테늄 성막이 가능하다는 장점을 가진다.Due to this high thermal stability, the ruthenium organometallic compound of Chemical Formula 1 of the present invention has the advantage of being able to stably form a ruthenium film not only at low temperatures but also in high temperature deposition processes.
실시예 4: 루테늄 화합물의 시차주사열량계 분석 실험Example 4: Differential scanning calorimetry analysis experiment of ruthenium compounds
실시예 1 및 2의 본 발명 화학식 1로 나타내어지는 루테늄 유기금속화합물인 Ru(η5-CHeptD)(η5-NC4Me4), 및 Ru(η5-MeCHeptD)(η5-NC4Me4)를 각각 고온 및 저온에서의 시차주사열량계(DSC)를 분석하였다. Examples 1 and 2 of the present invention Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ), which is a ruthenium organometallic compound represented by Chemical Formula 1, and Ru(η 5 - Me CHeptD)(η 5 -NC 4 ) Me 4 ) was measured by differential scanning calorimetry (DSC) at high and low temperatures, respectively. analyzed.
상기 DSC 시험에서는 상기 실시예 1 및 2의 본 발명 화학식 1의 루테늄 유기금속화합물인 Ru(η5-CHeptD)(η5-NC4Me4), 및 Ru(η5-MeCHeptD)(η5-NC4Me4)를 10℃/분의 속도로 400℃까지 승온시키면서 분석하였다.In the DSC test, Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ), which is the ruthenium organometallic compound of Formula 1 of the present invention in Examples 1 and 2, and Ru(η 5 -Me CHeptD)(η 5 -NC 4 Me 4 ) was analyzed while raising the temperature to 400°C at a rate of 10°C/min.
그 결과를 도 5 및 도 12, 그리고 하기 표 2에서 나타내고 있다. The results are shown in Figures 5 and 12, and Table 2 below.
(루덴스)Previously known compounds
(Ludens)
상기 표 2로부터 실시예 1 및 2의 화학식 1로 표시되는 본 발명의 루테늄 유기금속화합물의 열분해 거동이 비교예의 화합물인 Rudense의 경우보다 더 높은 온도에서 시작하는 것으로 나타내고 있다. 이러한 본 발명 실시예 1 및 2의 화학식 1로 표시되는 루테늄 유기금속화합물의 높은 열분해 온도는 본 발명의 화학식 1로 표시되는 루테늄 유기금속화합물이 비교예 화합물인 Rudense에 비하여 고온에서 열적 안정성이 향상된 루테늄 화합물임을 알 수 있다.Table 2 shows that the thermal decomposition behavior of the ruthenium organometallic compound of the present invention represented by Chemical Formula 1 of Examples 1 and 2 starts at a higher temperature than that of Rudense, a compound of Comparative Example. The high thermal decomposition temperature of the ruthenium organometallic compound represented by Formula 1 of Examples 1 and 2 of the present invention is such that the ruthenium organometallic compound represented by Formula 1 of the present invention has improved thermal stability at high temperatures compared to Rudense, a comparative example compound. It can be seen that it is a compound.
상기와 같이 실시예 1 및 2의 본 발명 화학식 1의 루테늄 유기금속화합물은 열적 안정성으로 고온 공정에서도 루테늄 박막 형성에 유리한 장점을 가진다. As described above, the ruthenium organometallic compound of Formula 1 of the present invention in Examples 1 and 2 has the advantage of thermal stability for forming a ruthenium thin film even in a high temperature process.
실시예 5: 본 발명 실시예 1의 루테늄 유기금속화합물의 박막 형성 공정Example 5: Thin film formation process of ruthenium organometallic compound of Example 1 of the present invention
<성막 시험><Tabernacle test>
본 발명의 루테늄 유기금속화합물을 원료로 하여, CVD 장치에 의해 루테늄 박막을 형성시켰다. 성막 조건, 공정 및 결과는 하기와 같다.Using the ruthenium organometallic compound of the present invention as a raw material, a ruthenium thin film was formed using a CVD device. Film formation conditions, processes, and results are as follows.
가. 성막 형성 조건go. Tabernacle formation conditions
- 기판: SiO2 기판- Substrate: SiO2 substrate
- 기판 온도: 450℃- Substrate temperature: 450℃
- 시료 온도(기화 온도): 120℃- Sample temperature (vaporization temperature): 120℃
- 챔버 압력: 5 Torr- Chamber pressure: 5 Torr
- 반응성 가스: 암모니아 (NH3)- Reactive gas: ammonia (NH 3 )
- 시료 및 반응성 가스 주입시간: 60 min- Sample and reactive gas injection time: 60 min
- 반응성 가스 주입량: 암모니아 500 sccm- Reactive gas injection amount: ammonia 500 sccm
- 면 저항 (sheet resistance): 33763 Ω/□- Sheet resistance: 33763 Ω/□
나. 성막 공정 및 결과me. Film formation process and results
상기와 같은 성막 조건으로 본 발명의 루테늄 유기금속화합물과 반응성 가스 암모니아를 일정 시간 동안 주입하여 루테늄 박막을 성막하였고, 성막의 박막 증착률은 0.5Å/min으로 일정하였다. 이는 본 발명의 신규한 루테늄 유기금속화합물이 균일하게 CVD 성장을 하는 것을 확인한 것이다. 또한, 루테늄 박막의 막 두께는 투과전자현미경 (transmission electron microscopy, TEM)으로 측정하였고, 루테늄 박막의 막 두께는 30Å이다(도 13 참조).A ruthenium thin film was formed by injecting the ruthenium organometallic compound of the present invention and the reactive gas ammonia for a certain period of time under the film formation conditions described above, and the thin film deposition rate of the film was constant at 0.5 Å/min. This confirms that the novel ruthenium organometallic compound of the present invention undergoes uniform CVD growth. In addition, the film thickness of the ruthenium thin film was measured using a transmission electron microscope (TEM), and the film thickness of the ruthenium thin film was 30 Å (see FIG. 13).
상기 본 발명의 화학식 1로 표현되는 화합물을 이용하여 제조된 루테늄 박막은 반도체 등의 제조에 사용될 수 있다. The ruthenium thin film manufactured using the compound represented by Formula 1 of the present invention can be used in the production of semiconductors, etc.
이상, 본 발명을 바람직한 실시예를 들어 상세하게 설명하였으나, 본 발명은 상기 실시예에 한정되지 않고, 본 발명의 기술적 사상의 범위 내에서 당 분야에서 통상의 지식을 가진 자에 의하여 여러 가지 변형이 가능하다.Above, the present invention has been described in detail with preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications can be made by those skilled in the art within the scope of the technical idea of the present invention. possible.
Claims (7)
[화학식 1]
상기 화학식 1 중 R은 수소; 또는 탄소수 1 내지 4의 직쇄 또는 분지쇄의 알킬기;이다. A ruthenium organometallic compound, characterized in that represented by the following formula (1):
[Formula 1]
In Formula 1, R is hydrogen; Or a straight-chain or branched alkyl group having 1 to 4 carbon atoms.
상기 R이 메틸기인 것을 특징으로 하는, 루테늄 유기금속화합물In claim 1,
Ruthenium organometallic compound, characterized in that R is a methyl group
[화학식 1]
(a) 염화루테늄 수화물 및 1,3,5-시클로헵타트리엔으로부터 디클로로(시클로헵타트리엔)루테늄(II)-다이머를 얻는 단계 1-1;
(b) 상기 단계 1-1의 디클로로(시클로헵타트리엔)루테늄(II)-다이머와 은트리플루오로메탄술폰산염 (Ag(OTf))로부터 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머를 제조하는 단계 1-2;
(c) 상기 단계 1-2의 디트리플루오로메탄술포네이트(시클로헵타트리엔)루테늄(II)-다이머 및 2,3,4,5-tetramethylpyrrole로부터 트리플루오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II)을 제조하는 단계 1-3; 및
(d) 상기 단계 1-3의 트리플루오로메탄술포네이트(시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) 및 lithium aluminum tri(t-butoxy) hydride (LiAl(OtBu)3H)로부터 Ru(η5-CHeptD)(η5-NC4Me4)을 얻는 단계 1-4;
상기 단계 1-4의 Ru(η5-CHeptD) 및 (η5-NC4Me4)는 각각 Ru(η5-시클로헵타디엔) 및 (η5-2,3,4,5-테트라메틸피롤)이다.A method for producing a compound in the formula (1) wherein R is hydrogen, comprising steps 1-1 to 1-4 of (a) to (d) below:
[Formula 1]
(a) Step 1-1 of obtaining dichloro(cycloheptatriene)ruthenium(II)-dimer from ruthenium chloride hydrate and 1,3,5-cycloheptatriene;
(b) Ditrifluoromethanesulfonate (cycloheptatriene) from dichloro(cycloheptatriene)ruthenium(II)-dimer and silver trifluoromethanesulfonate (Ag(OTf)) in step 1-1. Step 1-2 of preparing ruthenium (II)-dimer;
(c) Trifluoromethane sulfonate (cycloheptatriene) from ditrifluoromethanesulfonate (cycloheptatriene) ruthenium (II)-dimer and 2,3,4,5-tetramethylpyrrole in step 1-2 ) (2,3,4,5-tetramethylpyrrole) steps 1-3 for producing ruthenium (II); and
(d) trifluoromethanesulfonate (cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) and lithium aluminum tri (t-butoxy) hydride (LiAl) of steps 1-3 Steps 1-4 to obtain Ru(η 5 -CHeptD)(η 5 -NC 4 Me 4 ) from (O t Bu) 3 H);
Ru(η 5 -CHeptD) and (η 5 -NC 4 Me 4 ) in steps 1-4 are Ru(η 5 -cycloheptadiene) and (η 5 -2,3,4,5-tetramethylpyrrole, respectively. )am.
[화학식 1]
(i) 염화루테늄 수화물 및 R-1,3,5-시클로헵타트리엔으로부터 디클로로(R-시클로헵타트리엔)루테늄(II)-다이머를 얻는 단계 2-1;
(ii) 상기 단계 2-1의 디클로로(R-시클로헵타트리엔)루테늄(II)-다이머와 은트리플루오로메탄술폰산염 (Ag(OTf))로부터 디트리플루오로메탄술포네이트(R-시클로헵타트리엔)루테늄(II)-다이머를 제조하는 단계 2-2;
(iii) 상기 단계 2-2의 디트리플루오로메탄술포네이트(R-시클로헵타트리엔)루테늄(II)-다이머 및 2,3,4,5-tetramethylpyrrole로부터 트리플루오로메탄술포네이트(R-시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II)을 제조하는 단계 2-3; 및
(iv) 상기 단계 2-3의 트리플루오로메탄술포네이트(R-시클로헵타트리엔)(2,3,4,5-테트라메틸피롤)루테늄(II) 및 lithium aluminum tri(t-butoxy) hydride (LiAl(OtBu)3H)로부터 Ru(η5-RCHeptD)(η5-NC4Me4)을 얻는 단계 2-4;
상기 단계 2-4의 Ru(η5-RCHeptD)(η5-NC4Me4)는 Ru(η5-R-시클로헵타디엔)(η5-2,3,4,5-테트라메틸피롤)이고,
상기 단계 2-1 내지 2-4의 R은, 탄소수 1 내지 4의 직쇄 또는 분지쇄의 알킬기이다.A method for producing a compound of the following formula (1) where R is a straight-chain or branched alkyl group having 1 to 4 carbon atoms, comprising steps 2-1 to 2-4 of (i) to (iv) below: method
[Formula 1]
(i) Step 2-1 of obtaining dichloro(R-cycloheptatriene)ruthenium(II)-dimer from ruthenium chloride hydrate and R-1,3,5-cycloheptatriene;
(ii) Ditrifluoromethanesulfonate (R-cycloheptatriene) from dichloro(R-cycloheptatriene)ruthenium(II)-dimer and silver trifluoromethanesulfonate (Ag(OTf)) in step 2-1. Step 2-2 of producing heptatriene) ruthenium (II)-dimer;
(iii) Trifluoromethane sulfonate (R- Step 2-3 for producing cycloheptatriene)(2,3,4,5-tetramethylpyrrole)ruthenium(II); and
(iv) Trifluoromethanesulfonate (R-cycloheptatriene) (2,3,4,5-tetramethylpyrrole) ruthenium (II) and lithium aluminum tri(t-butoxy) hydride in steps 2-3 above. Steps 2-4 to obtain Ru(η 5 -R CHeptD)(η 5 -NC 4 Me 4 ) from (LiAl(O t Bu) 3 H);
Ru(η 5 -R CHeptD)(η 5 -NC 4 Me 4 ) in step 2-4 is Ru(η 5 -R-cycloheptadiene)(η 5 -2,3,4,5-tetramethylpyrrole )ego,
R in steps 2-1 to 2-4 is a straight or branched alkyl group having 1 to 4 carbon atoms.
A method of forming a ruthenium thin film using the ruthenium organometallic compound of claim 1 or 2, wherein the thin film forming process is chemical vapor deposition (CVD) or atomic layer deposition (ALD).
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