SG11201503912WA - Composition for forming overlay film, and resist pattern formation method using same - Google Patents

Composition for forming overlay film, and resist pattern formation method using same

Info

Publication number
SG11201503912WA
SG11201503912WA SG11201503912WA SG11201503912WA SG11201503912WA SG 11201503912W A SG11201503912W A SG 11201503912WA SG 11201503912W A SG11201503912W A SG 11201503912WA SG 11201503912W A SG11201503912W A SG 11201503912WA SG 11201503912W A SG11201503912W A SG 11201503912WA
Authority
SG
Singapore
Prior art keywords
composition
same
resist pattern
formation method
pattern formation
Prior art date
Application number
SG11201503912WA
Other languages
English (en)
Inventor
Xiaowei Wang
Masato Suzuki
Tetsuo Okayasu
Georg Pawlowski
Wang Xiaowei
Suzuki Masato
Okayasu Tetsuo
Pawlowski Georg
Original Assignee
Az Electronic Materials Luxembourg Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Luxembourg Sarl filed Critical Az Electronic Materials Luxembourg Sarl
Publication of SG11201503912WA publication Critical patent/SG11201503912WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/02—Homopolymers or copolymers of hydrocarbons
    • C09D125/04—Homopolymers or copolymers of styrene
    • C09D125/06—Polystyrene
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
    • C09D129/02—Homopolymers or copolymers of unsaturated alcohols
    • C09D129/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/02—Homopolymers or copolymers of acids; Metal or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11201503912WA 2012-12-13 2013-12-12 Composition for forming overlay film, and resist pattern formation method using same SG11201503912WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012272516A JP5563051B2 (ja) 2012-12-13 2012-12-13 上層膜形成用組成物およびそれを用いたレジストパターン形成方法
PCT/JP2013/083319 WO2014092149A1 (ja) 2012-12-13 2013-12-12 上層膜形成用組成物およびそれを用いたレジストパターン形成方法

Publications (1)

Publication Number Publication Date
SG11201503912WA true SG11201503912WA (en) 2015-06-29

Family

ID=50934432

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201503912WA SG11201503912WA (en) 2012-12-13 2013-12-12 Composition for forming overlay film, and resist pattern formation method using same

Country Status (8)

Country Link
US (1) US9810988B2 (ko)
EP (1) EP2933682B1 (ko)
JP (1) JP5563051B2 (ko)
KR (1) KR101936566B1 (ko)
CN (1) CN104919370B (ko)
SG (1) SG11201503912WA (ko)
TW (1) TWI636332B (ko)
WO (1) WO2014092149A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016013598A1 (ja) * 2014-07-24 2016-01-28 日産化学工業株式会社 レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法
JP6419581B2 (ja) 2015-01-08 2018-11-07 株式会社東芝 半導体装置の製造装置及び半導体装置の製造装置の管理方法
WO2016136596A1 (ja) * 2015-02-26 2016-09-01 富士フイルム株式会社 上層膜形成用組成物、並びに、それを用いたパターン形成方法及び電子デバイスの製造方法
CN108292097B (zh) * 2015-12-02 2021-10-08 富士胶片株式会社 图案形成方法、电子器件的制造方法、层叠膜及上层膜形成用组合物
CN113646698B (zh) * 2019-03-29 2024-05-10 太阳控股株式会社 光致抗蚀剂组合物及其固化物
CN111925701A (zh) * 2020-07-31 2020-11-13 江苏华夏制漆科技有限公司 一种水性厚浆型室外地坪涂料
CN116003665B (zh) * 2021-10-22 2024-03-29 上海芯刻微材料技术有限责任公司 一种聚合物及含其的193nm光刻用顶涂层膜的制备方法
CN116003666B (zh) * 2021-10-22 2024-04-26 上海芯刻微材料技术有限责任公司 一种聚合物及含其的193nm光刻用顶涂层膜的制备方法
CN114395068B (zh) * 2021-12-28 2023-11-03 宁波南大光电材料有限公司 一种窄分布的193nm深紫外光刻胶用BARC树脂及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG115693A1 (en) 2003-05-21 2005-10-28 Asml Netherlands Bv Method for coating a substrate for euv lithography and substrate with photoresist layer
JP2006189612A (ja) * 2005-01-06 2006-07-20 Matsushita Electric Ind Co Ltd バリア膜形成用材料及びそれを用いたパターン形成方法
JP4434984B2 (ja) * 2005-02-18 2010-03-17 信越化学工業株式会社 パターン形成方法及びパターン形成材料
JP4496432B2 (ja) * 2005-02-18 2010-07-07 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
JP4716027B2 (ja) * 2006-08-11 2011-07-06 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
US8105754B2 (en) * 2008-01-04 2012-01-31 University Of Florida Research Foundation, Inc. Functionalized fullerenes for nanolithography applications
US20120021555A1 (en) 2010-07-23 2012-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaic cell texturization
JP5395012B2 (ja) * 2010-08-23 2014-01-22 信越化学工業株式会社 レジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法、フラーレン誘導体
WO2012053302A1 (ja) * 2010-10-21 2012-04-26 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト上層膜形成組成物
CN102798902A (zh) * 2012-07-23 2012-11-28 中国科学院长春光学精密机械与物理研究所 一种提高极紫外光谱纯度的新型多层膜

Also Published As

Publication number Publication date
CN104919370A (zh) 2015-09-16
KR20150095828A (ko) 2015-08-21
TWI636332B (zh) 2018-09-21
JP2014119497A (ja) 2014-06-30
EP2933682A4 (en) 2016-08-17
EP2933682A1 (en) 2015-10-21
TW201435511A (zh) 2014-09-16
CN104919370B (zh) 2019-07-19
KR101936566B1 (ko) 2019-01-10
JP5563051B2 (ja) 2014-07-30
US20150331323A1 (en) 2015-11-19
EP2933682B1 (en) 2019-07-17
US9810988B2 (en) 2017-11-07
WO2014092149A1 (ja) 2014-06-19

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