SG11201503570PA - Method for measuring thickness variations in a layer of a multilayer semiconductor structure - Google Patents

Method for measuring thickness variations in a layer of a multilayer semiconductor structure

Info

Publication number
SG11201503570PA
SG11201503570PA SG11201503570PA SG11201503570PA SG11201503570PA SG 11201503570P A SG11201503570P A SG 11201503570PA SG 11201503570P A SG11201503570P A SG 11201503570PA SG 11201503570P A SG11201503570P A SG 11201503570PA SG 11201503570P A SG11201503570P A SG 11201503570PA
Authority
SG
Singapore
Prior art keywords
layer
semiconductor structure
thickness variations
multilayer semiconductor
measuring thickness
Prior art date
Application number
SG11201503570PA
Other languages
English (en)
Inventor
Oleg Kononchuk
Didier Dutartre
Original Assignee
Soitec Silicon On Insulator
St Microelectronics Crolles 2
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator, St Microelectronics Crolles 2 filed Critical Soitec Silicon On Insulator
Publication of SG11201503570PA publication Critical patent/SG11201503570PA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G01B11/0633—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection using one or more discrete wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
    • G02B21/361—Optical details, e.g. image relay to the camera or image sensor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
SG11201503570PA 2012-11-12 2013-09-19 Method for measuring thickness variations in a layer of a multilayer semiconductor structure SG11201503570PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1260751A FR2998047B1 (fr) 2012-11-12 2012-11-12 Procede de mesure des variations d'epaisseur d'une couche d'une structure semi-conductrice multicouche
PCT/EP2013/069528 WO2014072109A1 (fr) 2012-11-12 2013-09-19 Procede de mesure des variations d'epaisseur d'une couche d'une structure semi-conductrice multicouche

Publications (1)

Publication Number Publication Date
SG11201503570PA true SG11201503570PA (en) 2015-06-29

Family

ID=47557318

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201503570PA SG11201503570PA (en) 2012-11-12 2013-09-19 Method for measuring thickness variations in a layer of a multilayer semiconductor structure

Country Status (9)

Country Link
US (1) US9759546B2 (fr)
EP (1) EP2917688B1 (fr)
JP (1) JP6273620B2 (fr)
KR (1) KR102042080B1 (fr)
CN (1) CN104870933B (fr)
DK (1) DK2917688T3 (fr)
FR (1) FR2998047B1 (fr)
SG (1) SG11201503570PA (fr)
WO (1) WO2014072109A1 (fr)

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US9658150B2 (en) 2015-01-12 2017-05-23 Kla-Tencor Corporation System and method for semiconductor wafer inspection and metrology
FR3036200B1 (fr) 2015-05-13 2017-05-05 Soitec Silicon On Insulator Methode de calibration pour equipements de traitement thermique
US10132612B2 (en) 2015-07-30 2018-11-20 Hseb Dresden Gmbh Method and assembly for determining the thickness of a layer in a sample stack
EP3124912B1 (fr) 2015-07-30 2019-01-16 Unity Semiconductor GmbH Procédé et système pour la détermination de l'épaisseur d'une couche d'un empilement de couches
EP3150959B1 (fr) * 2015-10-02 2018-12-26 Soitec Procédé de mesure de variations d'épaisseur dans une couche d'une structure semi-conductrice multicouche
CN106352805A (zh) * 2016-08-04 2017-01-25 南方科技大学 一种光学微腔结构、制造方法及测量方法
EP3346229B1 (fr) 2017-01-09 2022-03-30 Unity Semiconductor GmbH Procédé et ensemble permettant de déterminer l'épaisseur des couches dans un empilement d'échantillons
US10879256B2 (en) 2017-11-22 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded memory using SOI structures and methods
US10893796B2 (en) * 2018-01-26 2021-01-19 Topcon Corporation 2D multi-layer thickness measurement
JP6959211B2 (ja) * 2018-11-09 2021-11-02 株式会社神戸製鋼所 酸化膜厚測定装置および該方法
JP6959212B2 (ja) * 2018-11-09 2021-11-02 株式会社神戸製鋼所 酸化膜厚測定装置および該方法
US10816464B2 (en) 2019-01-23 2020-10-27 Applied Materials, Inc. Imaging reflectometer
JP7141044B2 (ja) * 2019-05-15 2022-09-22 株式会社デンソー 膜厚測定方法
CN112304904B (zh) * 2019-07-15 2023-11-03 松山湖材料实验室 基于滤波阵列的硅片反射率检测方法
JP7160779B2 (ja) 2019-10-03 2022-10-25 信越半導体株式会社 薄膜付ウェーハの膜厚分布の測定方法
CN111492200B (zh) * 2020-03-17 2021-05-14 长江存储科技有限责任公司 用于半导体结构厚度测量的方法和系统
US11156566B2 (en) 2020-03-26 2021-10-26 Applied Materials, Inc. High sensitivity image-based reflectometry
US11150078B1 (en) 2020-03-26 2021-10-19 Applied Materials, Inc. High sensitivity image-based reflectometry
US11417010B2 (en) 2020-05-19 2022-08-16 Applied Materials, Inc. Image based metrology of surface deformations

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JP2800587B2 (ja) * 1992-10-05 1998-09-21 松下電器産業株式会社 異物検査装置および異物検査方法
JP3495797B2 (ja) * 1994-11-29 2004-02-09 東レエンジニアリング株式会社 光学定数測定方法およびその装置
JP2000074618A (ja) * 1998-08-27 2000-03-14 Fuji Xerox Co Ltd 干渉計測方法および干渉計測装置
US6900900B2 (en) * 2000-11-16 2005-05-31 Process Diagnostics, Inc. Apparatus and method for enabling high resolution film thickness and thickness-uniformity measurements
JP2002197730A (ja) 2000-12-27 2002-07-12 Susumu Nakatani 光学式記録媒体等の計測方法並びに光学式記録媒体等の計測装置
JP2001330941A (ja) * 2001-03-28 2001-11-30 Nec Corp マスクの検査方法及びマスクの検査装置
JP3878027B2 (ja) 2002-02-18 2007-02-07 東京エレクトロン株式会社 偏光解析方法及び光学的膜厚測定装置
US6885467B2 (en) 2002-10-28 2005-04-26 Tevet Process Control Technologies Ltd. Method and apparatus for thickness decomposition of complicated layer structures
JP2006313143A (ja) * 2005-04-08 2006-11-16 Dainippon Screen Mfg Co Ltd ムラ検査装置およびムラ検査方法
WO2008105460A1 (fr) * 2007-02-28 2008-09-04 Nikon Corporation Dispositif d'observation, dispositif d'inspection et procédé d'inspection
JP2010192700A (ja) * 2009-02-18 2010-09-02 Sumco Corp ３層構造体の第３の光透過層の厚さの算出方法およびｓｏｉウェーハの製造方法
JP5444823B2 (ja) * 2009-05-01 2014-03-19 信越半導体株式会社 Ｓｏｉウェーハの検査方法
JP5358373B2 (ja) * 2009-09-24 2013-12-04 株式会社神戸製鋼所 半導体薄膜の結晶性評価方法及び結晶性評価装置
JP5365581B2 (ja) * 2010-05-28 2013-12-11 信越半導体株式会社 薄膜付ウェーハの評価方法
JP2012151491A (ja) * 2012-03-22 2012-08-09 Renesas Electronics Corp 半導体装置

Also Published As

Publication number Publication date
KR102042080B1 (ko) 2019-12-02
WO2014072109A1 (fr) 2014-05-15
US20150300809A1 (en) 2015-10-22
EP2917688A1 (fr) 2015-09-16
DK2917688T3 (en) 2016-12-19
EP2917688B1 (fr) 2016-08-24
KR20150082610A (ko) 2015-07-15
FR2998047A1 (fr) 2014-05-16
CN104870933A (zh) 2015-08-26
US9759546B2 (en) 2017-09-12
JP6273620B2 (ja) 2018-02-07
JP2016504566A (ja) 2016-02-12
FR2998047B1 (fr) 2015-10-02
CN104870933B (zh) 2017-05-24

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