SG11201503570PA - Method for measuring thickness variations in a layer of a multilayer semiconductor structure - Google Patents
Method for measuring thickness variations in a layer of a multilayer semiconductor structureInfo
- Publication number
- SG11201503570PA SG11201503570PA SG11201503570PA SG11201503570PA SG11201503570PA SG 11201503570P A SG11201503570P A SG 11201503570PA SG 11201503570P A SG11201503570P A SG 11201503570PA SG 11201503570P A SG11201503570P A SG 11201503570PA SG 11201503570P A SG11201503570P A SG 11201503570PA
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- semiconductor structure
- thickness variations
- multilayer semiconductor
- measuring thickness
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
- G01B11/0633—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection using one or more discrete wavelengths
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
- G02B21/361—Optical details, e.g. image relay to the camera or image sensor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Multimedia (AREA)
- Optics & Photonics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1260751A FR2998047B1 (en) | 2012-11-12 | 2012-11-12 | METHOD FOR MEASURING THE THICKNESS VARIATIONS OF A LAYER OF A MULTILAYER SEMICONDUCTOR STRUCTURE |
| PCT/EP2013/069528 WO2014072109A1 (en) | 2012-11-12 | 2013-09-19 | Method for measuring thickness variations in a layer of a multilayer semiconductor structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201503570PA true SG11201503570PA (en) | 2015-06-29 |
Family
ID=47557318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201503570PA SG11201503570PA (en) | 2012-11-12 | 2013-09-19 | Method for measuring thickness variations in a layer of a multilayer semiconductor structure |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9759546B2 (en) |
| EP (1) | EP2917688B1 (en) |
| JP (1) | JP6273620B2 (en) |
| KR (1) | KR102042080B1 (en) |
| CN (1) | CN104870933B (en) |
| DK (1) | DK2917688T3 (en) |
| FR (1) | FR2998047B1 (en) |
| SG (1) | SG11201503570PA (en) |
| WO (1) | WO2014072109A1 (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9658150B2 (en) | 2015-01-12 | 2017-05-23 | Kla-Tencor Corporation | System and method for semiconductor wafer inspection and metrology |
| FR3036200B1 (en) | 2015-05-13 | 2017-05-05 | Soitec Silicon On Insulator | CALIBRATION METHOD FOR THERMAL TREATMENT EQUIPMENT |
| US10132612B2 (en) | 2015-07-30 | 2018-11-20 | Hseb Dresden Gmbh | Method and assembly for determining the thickness of a layer in a sample stack |
| EP3124912B1 (en) | 2015-07-30 | 2019-01-16 | Unity Semiconductor GmbH | Method and assembly for determining the thickness of a layer in a stack of layers |
| EP3150959B1 (en) | 2015-10-02 | 2018-12-26 | Soitec | Method for measuring thickness variations in a layer of a multilayer semiconductor structure |
| CN106352805A (en) * | 2016-08-04 | 2017-01-25 | 南方科技大学 | Optical microcavity structure, manufacturing method and measuring method |
| EP3346229B1 (en) | 2017-01-09 | 2022-03-30 | Unity Semiconductor GmbH | Method and assembly for determining the thickness of layers in a sample stack |
| US10879256B2 (en) | 2017-11-22 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded memory using SOI structures and methods |
| US10893796B2 (en) * | 2018-01-26 | 2021-01-19 | Topcon Corporation | 2D multi-layer thickness measurement |
| JP6959211B2 (en) * | 2018-11-09 | 2021-11-02 | 株式会社神戸製鋼所 | Oxidation film thickness measuring device and the method |
| JP6959212B2 (en) * | 2018-11-09 | 2021-11-02 | 株式会社神戸製鋼所 | Oxidation film thickness measuring device and the method |
| US10816464B2 (en) | 2019-01-23 | 2020-10-27 | Applied Materials, Inc. | Imaging reflectometer |
| JP7141044B2 (en) * | 2019-05-15 | 2022-09-22 | 株式会社デンソー | Film thickness measurement method |
| CN112304904B (en) * | 2019-07-15 | 2023-11-03 | 松山湖材料实验室 | Silicon wafer reflectivity detection method based on filter array |
| JP7160779B2 (en) | 2019-10-03 | 2022-10-25 | 信越半導体株式会社 | Method for measuring film thickness distribution of wafer with thin film |
| WO2021184175A1 (en) * | 2020-03-17 | 2021-09-23 | Yangtze Memory Technologies Co., Ltd. | Methods and systems for semiconductor structure thickness measurement |
| US11150078B1 (en) | 2020-03-26 | 2021-10-19 | Applied Materials, Inc. | High sensitivity image-based reflectometry |
| US11156566B2 (en) | 2020-03-26 | 2021-10-26 | Applied Materials, Inc. | High sensitivity image-based reflectometry |
| US11417010B2 (en) | 2020-05-19 | 2022-08-16 | Applied Materials, Inc. | Image based metrology of surface deformations |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2800587B2 (en) * | 1992-10-05 | 1998-09-21 | 松下電器産業株式会社 | Foreign matter inspection device and foreign matter inspection method |
| JP3495797B2 (en) * | 1994-11-29 | 2004-02-09 | 東レエンジニアリング株式会社 | Optical constant measuring method and device |
| JP2000074618A (en) * | 1998-08-27 | 2000-03-14 | Fuji Xerox Co Ltd | Method and instrument for measuring interference |
| US6900900B2 (en) * | 2000-11-16 | 2005-05-31 | Process Diagnostics, Inc. | Apparatus and method for enabling high resolution film thickness and thickness-uniformity measurements |
| JP2002197730A (en) | 2000-12-27 | 2002-07-12 | Susumu Nakatani | Method and apparatus for measuring optical recording medium or the like |
| JP2001330941A (en) * | 2001-03-28 | 2001-11-30 | Nec Corp | Method and device for inspecting mask |
| JP3878027B2 (en) | 2002-02-18 | 2007-02-07 | 東京エレクトロン株式会社 | Polarization analysis method and optical film thickness measuring apparatus |
| US6885467B2 (en) | 2002-10-28 | 2005-04-26 | Tevet Process Control Technologies Ltd. | Method and apparatus for thickness decomposition of complicated layer structures |
| JP2006313143A (en) * | 2005-04-08 | 2006-11-16 | Dainippon Screen Mfg Co Ltd | Irregularity inspection device and method thereof |
| CN101622525A (en) * | 2007-02-28 | 2010-01-06 | 株式会社尼康 | Observation device, inspection device and inspection method |
| JP2010192700A (en) * | 2009-02-18 | 2010-09-02 | Sumco Corp | Calculating method of thickness of third light transmission layer of three-layer structure, and manufacturing method of soi wafer |
| JP5444823B2 (en) * | 2009-05-01 | 2014-03-19 | 信越半導体株式会社 | SOI wafer inspection method |
| JP5358373B2 (en) * | 2009-09-24 | 2013-12-04 | 株式会社神戸製鋼所 | Semiconductor thin film crystallinity evaluation method and crystallinity evaluation apparatus |
| JP5365581B2 (en) * | 2010-05-28 | 2013-12-11 | 信越半導体株式会社 | Evaluation method of wafer with thin film |
| JP2012151491A (en) * | 2012-03-22 | 2012-08-09 | Renesas Electronics Corp | Semiconductor device |
-
2012
- 2012-11-12 FR FR1260751A patent/FR2998047B1/en active Active
-
2013
- 2013-09-19 DK DK13763109.9T patent/DK2917688T3/en active
- 2013-09-19 WO PCT/EP2013/069528 patent/WO2014072109A1/en active Application Filing
- 2013-09-19 KR KR1020157015488A patent/KR102042080B1/en active IP Right Grant
- 2013-09-19 US US14/442,081 patent/US9759546B2/en active Active
- 2013-09-19 EP EP13763109.9A patent/EP2917688B1/en active Active
- 2013-09-19 SG SG11201503570PA patent/SG11201503570PA/en unknown
- 2013-09-19 JP JP2015541047A patent/JP6273620B2/en active Active
- 2013-09-19 CN CN201380056335.9A patent/CN104870933B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104870933B (en) | 2017-05-24 |
| US20150300809A1 (en) | 2015-10-22 |
| JP6273620B2 (en) | 2018-02-07 |
| CN104870933A (en) | 2015-08-26 |
| KR20150082610A (en) | 2015-07-15 |
| KR102042080B1 (en) | 2019-12-02 |
| WO2014072109A1 (en) | 2014-05-15 |
| DK2917688T3 (en) | 2016-12-19 |
| EP2917688B1 (en) | 2016-08-24 |
| US9759546B2 (en) | 2017-09-12 |
| JP2016504566A (en) | 2016-02-12 |
| FR2998047A1 (en) | 2014-05-16 |
| FR2998047B1 (en) | 2015-10-02 |
| EP2917688A1 (en) | 2015-09-16 |
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