SG11201407031VA - Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate - Google Patents

Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

Info

Publication number
SG11201407031VA
SG11201407031VA SG11201407031VA SG11201407031VA SG11201407031VA SG 11201407031V A SG11201407031V A SG 11201407031VA SG 11201407031V A SG11201407031V A SG 11201407031VA SG 11201407031V A SG11201407031V A SG 11201407031VA SG 11201407031V A SG11201407031V A SG 11201407031VA
Authority
SG
Singapore
Prior art keywords
polishing
lllll
substrate
abrasive grains
llll
Prior art date
Application number
SG11201407031VA
Other languages
English (en)
Inventor
Tomohiro Iwano
Hisataka Minami
Toshiaki Akutsu
Koji Fujisaki
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201407031VA publication Critical patent/SG11201407031VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG11201407031VA 2012-05-22 2013-03-26 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate SG11201407031VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012116863 2012-05-22
PCT/JP2013/058784 WO2013175857A1 (fr) 2012-05-22 2013-03-26 Bouillie, ensemble de solution de polissage, solution de polissage, procédé de polissage de substrat, et substrat

Publications (1)

Publication Number Publication Date
SG11201407031VA true SG11201407031VA (en) 2014-12-30

Family

ID=49623561

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407031VA SG11201407031VA (en) 2012-05-22 2013-03-26 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

Country Status (7)

Country Link
US (1) US9346978B2 (fr)
JP (1) JP6060970B2 (fr)
KR (1) KR102034330B1 (fr)
CN (1) CN104335331B (fr)
SG (1) SG11201407031VA (fr)
TW (1) TWI576417B (fr)
WO (1) WO2013175857A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011111421A1 (fr) 2010-03-12 2011-09-15 日立化成工業株式会社 Boue, ensemble fluide de polissage, fluide de polissage, et procédé associé de polissage de substrat
CN103222036B (zh) 2010-11-22 2016-11-09 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
KR20130129397A (ko) * 2010-11-22 2013-11-28 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
US9301920B2 (en) 2012-06-18 2016-04-05 Therapeuticsmd, Inc. Natural combination hormone replacement formulations and therapies
US10557058B2 (en) * 2012-02-21 2020-02-11 Hitachi Chemical Company, Ltd. Polishing agent, polishing agent set, and substrate polishing method
JP5943072B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
SG11201407086TA (en) 2012-05-22 2015-02-27 Hitachi Chemical Co Ltd Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
KR102245055B1 (ko) * 2013-08-30 2021-04-26 쇼와덴코머티리얼즈가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
WO2002067309A1 (fr) 2001-02-20 2002-08-29 Hitachi Chemical Co., Ltd. Pate a polir et procede de polissage d'un substrat
JP2002241739A (ja) 2001-02-20 2002-08-28 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
WO2003014251A1 (fr) * 2001-08-09 2003-02-20 Hitachi Maxell, Ltd. Particules non magnetiques en forme de plaquettes et procede de production de celles-ci, materiau abrasif, article de polissage et fluide abrasif contenant ces particules
KR100698396B1 (ko) * 2003-05-28 2007-03-23 히다치 가세고교 가부시끼가이샤 연마제 및 연마 방법
JP2006249129A (ja) 2005-03-08 2006-09-21 Hitachi Chem Co Ltd 研磨剤の製造方法及び研磨剤
FR2906800B1 (fr) * 2006-10-09 2008-11-28 Rhodia Recherches & Tech Suspension liquide et poudre de particules d'oxyde de cerium, procedes de preparation de celles-ci et utilisation dans le polissage
JP5281758B2 (ja) * 2007-05-24 2013-09-04 ユシロ化学工業株式会社 研磨用組成物
CN104178088B (zh) * 2008-04-23 2016-08-17 日立化成株式会社 研磨剂及使用该研磨剂的基板研磨方法
JP5287174B2 (ja) * 2008-04-30 2013-09-11 日立化成株式会社 研磨剤及び研磨方法
US8366959B2 (en) * 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
CN102473622B (zh) 2009-10-22 2013-10-16 日立化成株式会社 研磨剂、浓缩一液式研磨剂、二液式研磨剂以及基板研磨方法
WO2011111421A1 (fr) * 2010-03-12 2011-09-15 日立化成工業株式会社 Boue, ensemble fluide de polissage, fluide de polissage, et procédé associé de polissage de substrat
KR20130129397A (ko) 2010-11-22 2013-11-28 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판

Also Published As

Publication number Publication date
CN104335331A (zh) 2015-02-04
KR102034330B1 (ko) 2019-10-18
JPWO2013175857A1 (ja) 2016-01-12
JP6060970B2 (ja) 2017-01-18
US9346978B2 (en) 2016-05-24
CN104335331B (zh) 2016-09-14
KR20150014959A (ko) 2015-02-09
WO2013175857A1 (fr) 2013-11-28
US20150132208A1 (en) 2015-05-14
TWI576417B (zh) 2017-04-01
TW201348419A (zh) 2013-12-01

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