SG11201404747UA - Chemical mechanical polishing (cmp) composition comprising a protein - Google Patents

Chemical mechanical polishing (cmp) composition comprising a protein

Info

Publication number
SG11201404747UA
SG11201404747UA SG11201404747UA SG11201404747UA SG11201404747UA SG 11201404747U A SG11201404747U A SG 11201404747UA SG 11201404747U A SG11201404747U A SG 11201404747UA SG 11201404747U A SG11201404747U A SG 11201404747UA SG 11201404747U A SG11201404747U A SG 11201404747UA
Authority
SG
Singapore
Prior art keywords
cmp
protein
composition
mechanical polishing
chemical mechanical
Prior art date
Application number
SG11201404747UA
Other languages
English (en)
Inventor
Bastian Marten Noller
Michael Lauter
Roland Lange
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201404747UA publication Critical patent/SG11201404747UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201404747UA 2012-02-10 2013-01-25 Chemical mechanical polishing (cmp) composition comprising a protein SG11201404747UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261597210P 2012-02-10 2012-02-10
PCT/IB2013/050647 WO2013118015A1 (en) 2012-02-10 2013-01-25 Chemical mechanical polishing (cmp) composition comprising a protein

Publications (1)

Publication Number Publication Date
SG11201404747UA true SG11201404747UA (en) 2014-09-26

Family

ID=48946960

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201404747UA SG11201404747UA (en) 2012-02-10 2013-01-25 Chemical mechanical polishing (cmp) composition comprising a protein

Country Status (11)

Country Link
US (1) US9777192B2 (enrdf_load_stackoverflow)
EP (1) EP2812911B1 (enrdf_load_stackoverflow)
JP (1) JP6114312B2 (enrdf_load_stackoverflow)
KR (1) KR20140122271A (enrdf_load_stackoverflow)
CN (1) CN104081501B (enrdf_load_stackoverflow)
IL (1) IL233797A0 (enrdf_load_stackoverflow)
MY (1) MY171093A (enrdf_load_stackoverflow)
RU (1) RU2631875C2 (enrdf_load_stackoverflow)
SG (1) SG11201404747UA (enrdf_load_stackoverflow)
TW (1) TWI606102B (enrdf_load_stackoverflow)
WO (1) WO2013118015A1 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013122061A1 (ja) * 2012-02-13 2013-08-22 国立大学法人京都工芸繊維大学 窒化ケイ素（Ｓｉ３Ｎ４）親和性ペプチド、及びその利用
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9551075B2 (en) 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
KR102605140B1 (ko) * 2015-12-17 2023-11-24 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법
US11326076B2 (en) * 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
US11608451B2 (en) * 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
US12009339B2 (en) 2020-08-18 2024-06-11 Seoul National University R&Db Foundation Electronic device and method of transferring electronic element using stamping and magnetic field alignment
CN118240485B (zh) * 2024-05-27 2024-08-16 嘉兴市小辰光伏科技有限公司 一种具有云朵状塔基硅片碱抛添加剂及其使用方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1061111B1 (en) * 1998-02-24 2004-05-06 Showa Denko Kabushiki Kaisha Abrasive composition for polishing semiconductor device and process for producing semiconductor device with the same
JP3560484B2 (ja) * 1998-08-05 2004-09-02 昭和電工株式会社 Ｌｓｉデバイス研磨用研磨材組成物及び研磨方法
EP1235261A4 (en) 1999-11-04 2003-02-05 Seimi Chem Kk PEPTIDE-CONTAINING POLISH FOR SEMICONDUCTORS
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
TWI281493B (en) * 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7241734B2 (en) * 2004-08-18 2007-07-10 E. I. Du Pont De Nemours And Company Thermophilic hydrophobin proteins and applications for surface modification
JP4027929B2 (ja) 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
WO2007019342A2 (en) 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
WO2007130350A1 (en) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
KR20090087034A (ko) * 2006-12-04 2009-08-14 바스프 에스이 알루미나 수화물 연마제를 포함하는 금속 표면용 평탄화 조성물
JP4784614B2 (ja) * 2008-02-25 2011-10-05 Ｊｓｒ株式会社 化学機械研磨用水系分散体
KR101686255B1 (ko) 2008-10-03 2016-12-13 바스프 에스이 향상된 성능의 화학적 기계적 연마(ｃｍｐ) 연마 용액
CN102341464A (zh) * 2009-03-09 2012-02-01 巴斯夫欧洲公司 水溶性聚合物和疏水蛋白的混合物在增稠水相中的用途
JP2012028747A (ja) 2010-06-24 2012-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨液及び基板の研磨方法

Also Published As

Publication number Publication date
EP2812911A4 (en) 2015-08-12
RU2631875C2 (ru) 2017-09-28
KR20140122271A (ko) 2014-10-17
CN104081501B (zh) 2019-02-01
JP2015511258A (ja) 2015-04-16
TW201339258A (zh) 2013-10-01
RU2014136534A (ru) 2016-03-27
EP2812911B1 (en) 2017-06-28
EP2812911A1 (en) 2014-12-17
IL233797A0 (en) 2014-09-30
MY171093A (en) 2019-09-25
US20150017454A1 (en) 2015-01-15
JP6114312B2 (ja) 2017-04-12
WO2013118015A1 (en) 2013-08-15
CN104081501A (zh) 2014-10-01
TWI606102B (zh) 2017-11-21
US9777192B2 (en) 2017-10-03

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