SG11201400561TA - Process chamber for etching low k and other dielectric films - Google Patents

Process chamber for etching low k and other dielectric films

Info

Publication number
SG11201400561TA
SG11201400561TA SG11201400561TA SG11201400561TA SG11201400561TA SG 11201400561T A SG11201400561T A SG 11201400561TA SG 11201400561T A SG11201400561T A SG 11201400561TA SG 11201400561T A SG11201400561T A SG 11201400561TA SG 11201400561T A SG11201400561T A SG 11201400561TA
Authority
SG
Singapore
Prior art keywords
process chamber
dielectric films
etching low
etching
low
Prior art date
Application number
SG11201400561TA
Inventor
Dmitry Lubomirsky
Srinivas Nemani
Ellie Yieh
Sergey G Belostotskiy
Original Assignee
Applied Materials Inc
Dmitry Lubomirsky
Srinivas Nemani
Ellie Yieh
Sergey G Belostotskiy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G Belostotskiy filed Critical Applied Materials Inc
Publication of SG11201400561TA publication Critical patent/SG11201400561TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32587—Triode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
SG11201400561TA 2011-10-27 2012-10-17 Process chamber for etching low k and other dielectric films SG11201400561TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161552183P 2011-10-27 2011-10-27
US13/651,074 US9666414B2 (en) 2011-10-27 2012-10-12 Process chamber for etching low k and other dielectric films
PCT/US2012/060668 WO2013062831A2 (en) 2011-10-27 2012-10-17 Process chamber for etching low k and other dielectric films

Publications (1)

Publication Number Publication Date
SG11201400561TA true SG11201400561TA (en) 2014-08-28

Family

ID=48168761

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201400561TA SG11201400561TA (en) 2011-10-27 2012-10-17 Process chamber for etching low k and other dielectric films
SG10201709011YA SG10201709011YA (en) 2011-10-27 2012-10-17 Process chamber for etching low k and other dielectric films

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201709011YA SG10201709011YA (en) 2011-10-27 2012-10-17 Process chamber for etching low k and other dielectric films

Country Status (7)

Country Link
US (4) US9666414B2 (en)
JP (6) JP6438302B2 (en)
KR (5) KR101962317B1 (en)
CN (3) CN104011837B (en)
SG (2) SG11201400561TA (en)
TW (1) TWI604524B (en)
WO (1) WO2013062831A2 (en)

Families Citing this family (180)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129270B1 (en) 2008-12-10 2012-03-06 Novellus Systems, Inc. Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9548228B2 (en) 2009-08-04 2017-01-17 Lam Research Corporation Void free tungsten fill in different sized features
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
TWI602283B (en) 2012-03-27 2017-10-11 諾發系統有限公司 Tungsten feature fill
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9165783B2 (en) * 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US20140262031A1 (en) * 2013-03-12 2014-09-18 Sergey G. BELOSTOTSKIY Multi-mode etch chamber source assembly
KR102203098B1 (en) 2013-07-25 2021-01-15 삼성디스플레이 주식회사 Vapor deposition apparatus
US9543163B2 (en) * 2013-08-20 2017-01-10 Applied Materials, Inc. Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process
US8980758B1 (en) * 2013-09-17 2015-03-17 Applied Materials, Inc. Methods for etching an etching stop layer utilizing a cyclical etching process
JP2015084396A (en) * 2013-09-19 2015-04-30 東京エレクトロン株式会社 Etching method
US9514953B2 (en) * 2013-11-20 2016-12-06 Applied Materials, Inc. Methods for barrier layer removal
US9620382B2 (en) * 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
US20150200042A1 (en) * 2014-01-10 2015-07-16 Applied Materials, Inc. Recessing ultra-low k dielectric using remote plasma source
US9368370B2 (en) * 2014-03-14 2016-06-14 Applied Materials, Inc. Temperature ramping using gas distribution plate heat
JP6230954B2 (en) * 2014-05-09 2017-11-15 東京エレクトロン株式会社 Etching method
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
JP6373150B2 (en) * 2014-06-16 2018-08-15 東京エレクトロン株式会社 Substrate processing system and substrate processing method
KR101745686B1 (en) 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 Methods for high precision etching of substrates
JP6382055B2 (en) * 2014-10-07 2018-08-29 東京エレクトロン株式会社 Method for processing an object
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9972504B2 (en) * 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US10504700B2 (en) * 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
ES2672245T3 (en) * 2015-08-31 2018-06-13 Total S.A. Plasma generating apparatus and method of manufacturing devices with standards using spatially resolved plasma processing
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
US10256076B2 (en) 2015-10-22 2019-04-09 Applied Materials, Inc. Substrate processing apparatus and methods
KR102481166B1 (en) * 2015-10-30 2022-12-27 삼성전자주식회사 Method of post-etching
CN108431930A (en) * 2016-01-07 2018-08-21 应用材料公司 Atomic layer etch system with remote plasma source and DC electrodes
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
WO2017136093A1 (en) * 2016-02-05 2017-08-10 Applied Materials, Inc. Integrated layer etch system with multiple type chambers
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
CN108885402B (en) * 2016-02-29 2020-01-14 东京毅力科创株式会社 Selective SiARC removal
US10249521B2 (en) * 2016-03-17 2019-04-02 Lam Research Ag Wet-dry integrated wafer processing system
JP6770848B2 (en) 2016-03-29 2020-10-21 東京エレクトロン株式会社 How to process the object to be processed
WO2017170405A1 (en) * 2016-03-29 2017-10-05 東京エレクトロン株式会社 Method for processing object to be processed
US10269566B2 (en) * 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
JP6606464B2 (en) * 2016-05-20 2019-11-13 東京エレクトロン株式会社 Etching method
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US9837312B1 (en) 2016-07-22 2017-12-05 Lam Research Corporation Atomic layer etching for enhanced bottom-up feature fill
US10858727B2 (en) 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
US10566211B2 (en) 2016-08-30 2020-02-18 Lam Research Corporation Continuous and pulsed RF plasma for etching metals
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) * 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
WO2018111333A1 (en) * 2016-12-14 2018-06-21 Mattson Technology, Inc. Atomic layer etch process using plasma in conjunction with a rapid thermal activation process
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10840068B2 (en) * 2017-02-15 2020-11-17 Yield Engineering Systems, Inc. Plasma spreading apparatus and method of spreading plasma in process ovens
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
SG11201908533PA (en) * 2017-03-17 2019-10-30 Tokyo Electron Ltd Surface modification control for etch metric enhancement
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP7071850B2 (en) * 2017-05-11 2022-05-19 東京エレクトロン株式会社 Etching method
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10361091B2 (en) * 2017-05-31 2019-07-23 Lam Research Corporation Porous low-k dielectric etch
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US11306395B2 (en) * 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
JP6883495B2 (en) * 2017-09-04 2021-06-09 東京エレクトロン株式会社 Etching method
JP6977474B2 (en) * 2017-10-23 2021-12-08 東京エレクトロン株式会社 Manufacturing method of semiconductor device
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
KR102538177B1 (en) 2017-11-16 2023-05-31 삼성전자주식회사 Deposition apparatus including upper shower head and lower shower head
KR102404061B1 (en) 2017-11-16 2022-05-31 삼성전자주식회사 Deposition apparatus including upper shower head and lower shower head
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI716818B (en) 2018-02-28 2021-01-21 美商應用材料股份有限公司 Systems and methods to form airgaps
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
KR20240027863A (en) * 2018-03-16 2024-03-04 램 리써치 코포레이션 Plasma etching chemistries of high aspect ratio features in dielectrics
EP3776636A4 (en) 2018-03-30 2021-12-22 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
JP6811202B2 (en) * 2018-04-17 2021-01-13 東京エレクトロン株式会社 Etching method and plasma processing equipment
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7022651B2 (en) * 2018-05-28 2022-02-18 東京エレクトロン株式会社 Film etching method and plasma processing equipment
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US11437238B2 (en) 2018-07-09 2022-09-06 Applied Materials, Inc. Patterning scheme to improve EUV resist and hard mask selectivity
KR102088596B1 (en) * 2018-07-09 2020-06-01 램 리써치 코포레이션 Radio frequency (rf) signal source supplying rf plasma generator and remote plasma generator
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
CN112673456A (en) * 2018-09-10 2021-04-16 朗姆研究公司 Atomic layer treatment process using metastable activated radical species
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11114306B2 (en) * 2018-09-17 2021-09-07 Applied Materials, Inc. Methods for depositing dielectric material
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
JP7138529B2 (en) * 2018-09-28 2022-09-16 東京エレクトロン株式会社 Etching method
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11114304B2 (en) * 2018-11-30 2021-09-07 Tokyo Electron Limited Substrate processing method
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP7451540B2 (en) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド Feedback loop for controlling pulsed voltage waveforms
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11387071B2 (en) 2019-10-06 2022-07-12 Applied Materials, Inc. Multi-source ion beam etch system
KR20210042653A (en) * 2019-10-10 2021-04-20 주성엔지니어링(주) Substrate Processing Apparatus
US20210159052A1 (en) * 2019-11-27 2021-05-27 Applied Materials, Inc. Processing Chamber With Multiple Plasma Units
US20210210355A1 (en) * 2020-01-08 2021-07-08 Tokyo Electron Limited Methods of Plasma Processing Using a Pulsed Electron Beam
JP7414593B2 (en) * 2020-03-10 2024-01-16 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11515150B2 (en) * 2020-10-22 2022-11-29 Applied Materials, Inc. Hardmask tuning by electrode adjustment
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11195723B1 (en) * 2020-12-11 2021-12-07 Tokyo Electron Limited Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch
WO2022154936A2 (en) 2020-12-18 2022-07-21 Heraeus Conamic North America Llc Plasma resistant yttrium aluminum oxide chamber components
JP2022098353A (en) * 2020-12-21 2022-07-01 東京エレクトロン株式会社 Plasma processing apparatus
JP7312160B2 (en) * 2020-12-28 2023-07-20 株式会社アルバック Etching apparatus and etching method
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
KR20220158930A (en) * 2021-05-25 2022-12-02 세메스 주식회사 Apparatus for treating substrate and method for treating substrate
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US20230033058A1 (en) * 2021-07-29 2023-02-02 Applied Materials, Inc. Reactor with inductively coupled plasma source
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US20230317419A1 (en) * 2022-04-01 2023-10-05 Semes Co., Ltd. Apparatus and method for processing substrate using plasma
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US20230402286A1 (en) * 2022-06-10 2023-12-14 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
JP2024039508A (en) * 2022-09-09 2024-03-22 東京エレクトロン株式会社 Plasma processing apparatus
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US20240162043A1 (en) * 2022-11-16 2024-05-16 Tokyo Electron Limited Sidewall Inorganic Passivation for Dielectric Etching Via Surface Modification

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63219129A (en) * 1987-03-06 1988-09-12 Shimadzu Corp Dry-etching device
US4889588A (en) * 1989-05-01 1989-12-26 Tegal Corporation Plasma etch isotropy control
JPH03129821A (en) * 1989-10-16 1991-06-03 Seiko Epson Corp Manufacture of semiconductor device
JPH04132219A (en) * 1990-09-24 1992-05-06 Sony Corp Plasma treatment apparatus and manufacture of semiconductor device using same
JPH04302426A (en) * 1991-03-29 1992-10-26 Sony Corp Digital etching method
KR100276093B1 (en) 1992-10-19 2000-12-15 히가시 데쓰로 Plasma etching system
JPH06177089A (en) * 1992-12-04 1994-06-24 Fujitsu Ltd Manufacture of semiconductor device
US5449410A (en) * 1993-07-28 1995-09-12 Applied Materials, Inc. Plasma processing apparatus
JP3279038B2 (en) * 1994-01-31 2002-04-30 ソニー株式会社 Plasma apparatus and plasma processing method using the same
US5895549A (en) * 1994-07-11 1999-04-20 Applied Komatsu Technology, Inc. Method and apparatus for etching film layers on large substrates
US5705443A (en) * 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
US6042686A (en) * 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
US5882489A (en) * 1996-04-26 1999-03-16 Ulvac Technologies, Inc. Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US5882414A (en) 1996-09-09 1999-03-16 Applied Materials, Inc. Method and apparatus for self-cleaning a blocker plate
WO1998020896A1 (en) 1996-11-15 1998-05-22 Health Research Inc. A method for inducing apoptosis of primary central nervous system b cell lymphomas
JP3940467B2 (en) * 1997-06-03 2007-07-04 株式会社アルバック Reactive ion etching apparatus and method
US6203862B1 (en) 1998-05-13 2001-03-20 Intevac, Inc. Processing systems with dual ion sources
US6465159B1 (en) * 1999-06-28 2002-10-15 Lam Research Corporation Method and apparatus for side wall passivation for organic etch
JP2001035832A (en) * 1999-07-16 2001-02-09 Canon Inc Dry etching method
US6734110B1 (en) * 1999-10-14 2004-05-11 Taiwan Semiconductor Manufacturing Company Damascene method employing composite etch stop layer
WO2001052302A1 (en) * 2000-01-10 2001-07-19 Tokyo Electron Limited Segmented electrode assembly and method for plasma processing
US20030079983A1 (en) * 2000-02-25 2003-05-01 Maolin Long Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources
WO2001073814A2 (en) * 2000-03-28 2001-10-04 Tokyo Electron Limited Method and apparatus for controlling power delivered to a multiple segment electrode
US20020177321A1 (en) * 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
US6455417B1 (en) * 2001-07-05 2002-09-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming damascene structure employing bi-layer carbon doped silicon nitride/carbon doped silicon oxide etch stop layer
KR100433006B1 (en) * 2001-10-08 2004-05-28 주식회사 플라즈마트 Multi-Functional Plasma Generator
JP3732138B2 (en) 2001-10-26 2006-01-05 日野自動車株式会社 Engine exhaust pipe
US6887340B2 (en) 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
US7247223B2 (en) * 2002-05-29 2007-07-24 Semitool, Inc. Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces
US7024105B2 (en) 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
CN100541736C (en) * 2003-11-11 2009-09-16 东京毅力科创株式会社 Substrate processing method using same
KR100900587B1 (en) * 2003-11-11 2009-06-02 도쿄엘렉트론가부시키가이샤 Method for processing substrate
JP4231417B2 (en) 2004-01-07 2009-02-25 パナソニック株式会社 Substrate processing apparatus and cleaning method thereof
JP2006019571A (en) 2004-07-02 2006-01-19 Toshiba Corp Semiconductor storage and manufacturing method thereof
JP2006024730A (en) * 2004-07-08 2006-01-26 Sony Corp Manufacturing method of semiconductor device
US7381291B2 (en) 2004-07-29 2008-06-03 Asm Japan K.K. Dual-chamber plasma processing apparatus
KR100640950B1 (en) * 2004-12-29 2006-11-02 동부일렉트로닉스 주식회사 Method for Forming Metal Wire of Semiconductor Divice
KR100725037B1 (en) 2005-01-21 2007-06-07 세메스 주식회사 Apparatus and method for treating semiconductor device with plasma
JP2007088411A (en) * 2005-06-28 2007-04-05 Hitachi High-Technologies Corp Electrostatic attraction device, wafer processing apparatus and plasma processing method
JP4862425B2 (en) * 2006-02-24 2012-01-25 ソニー株式会社 Substrate processing method and substrate processing apparatus
JP2007266455A (en) 2006-03-29 2007-10-11 Tokyo Electron Ltd Substrate processing apparatus and method, and storage medium
JP2007266522A (en) * 2006-03-30 2007-10-11 Ebara Corp Plasma treatment device and processing method employing it
KR100864111B1 (en) * 2006-05-22 2008-10-16 최대규 Inductively coupled plasma reactor
US8124516B2 (en) * 2006-08-21 2012-02-28 Lam Research Corporation Trilayer resist organic layer etch
JP2008050055A (en) 2006-08-26 2008-03-06 Maakisu:Kk Bottle
JP5192209B2 (en) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 Plasma etching apparatus, plasma etching method, and computer-readable storage medium
US20080178805A1 (en) * 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
JPWO2008117832A1 (en) 2007-03-27 2010-07-15 キヤノンアネルバ株式会社 Vacuum processing equipment
US7988815B2 (en) * 2007-07-26 2011-08-02 Applied Materials, Inc. Plasma reactor with reduced electrical skew using electrical bypass elements
CN101911840B (en) * 2007-12-25 2013-04-17 应用材料公司 Asymmetrical RF drive for electrode of plasma chamber
US9520275B2 (en) * 2008-03-21 2016-12-13 Tokyo Electron Limited Mono-energetic neutral beam activated chemical processing system and method of using
US20090277587A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
KR101440415B1 (en) 2008-07-02 2014-09-17 주식회사 원익아이피에스 Vacuum Processing Apparatus
US8026157B2 (en) * 2009-09-02 2011-09-27 Applied Materials, Inc. Gas mixing method realized by back diffusion in a PECVD system with showerhead
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
CN102931222B (en) 2011-08-08 2015-05-20 中国科学院微电子研究所 Semiconductor device and method for manufacturing the same
US9666414B2 (en) 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US9325294B2 (en) 2013-03-15 2016-04-26 Resonant Inc. Microwave acoustic wave filters

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