SG11201502334XA - Substrate process chamber exhaust - Google Patents

Substrate process chamber exhaust

Info

Publication number
SG11201502334XA
SG11201502334XA SG11201502334XA SG11201502334XA SG11201502334XA SG 11201502334X A SG11201502334X A SG 11201502334XA SG 11201502334X A SG11201502334X A SG 11201502334XA SG 11201502334X A SG11201502334X A SG 11201502334XA SG 11201502334X A SG11201502334X A SG 11201502334XA
Authority
SG
Singapore
Prior art keywords
process chamber
chamber exhaust
substrate process
substrate
exhaust
Prior art date
Application number
SG11201502334XA
Inventor
Paul Brillhart
David Aberle
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201502334XA publication Critical patent/SG11201502334XA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201502334XA 2012-10-26 2013-10-11 Substrate process chamber exhaust SG11201502334XA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261718865P 2012-10-26 2012-10-26
US14/051,010 US20140116336A1 (en) 2012-10-26 2013-10-10 Substrate process chamber exhaust
PCT/US2013/064553 WO2014066067A1 (en) 2012-10-26 2013-10-11 Substrate process chamber exhaust

Publications (1)

Publication Number Publication Date
SG11201502334XA true SG11201502334XA (en) 2015-08-28

Family

ID=50545108

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201502334XA SG11201502334XA (en) 2012-10-26 2013-10-11 Substrate process chamber exhaust

Country Status (4)

Country Link
US (1) US20140116336A1 (en)
SG (1) SG11201502334XA (en)
TW (1) TW201423835A (en)
WO (1) WO2014066067A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101884003B1 (en) * 2011-03-22 2018-07-31 어플라이드 머티어리얼스, 인코포레이티드 Liner assembly for chemical vapor deposition chamber
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
KR102127715B1 (en) * 2013-08-09 2020-06-29 에스케이실트론 주식회사 An epitaxial reactor
WO2015195256A1 (en) * 2014-06-18 2015-12-23 Applied Materials, Inc. One-piece injector assembly
CN204906954U (en) 2015-09-11 2015-12-23 讯凯国际股份有限公司 Pressure relief device and liquid cooling system
US11629409B2 (en) * 2019-05-28 2023-04-18 Applied Materials, Inc. Inline microwave batch degas chamber

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5244501A (en) * 1986-07-26 1993-09-14 Nihon Shinku Gijutsu Kabushiki Kaisha Apparatus for chemical vapor deposition
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US5916369A (en) * 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
US6500734B2 (en) * 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
FI97731C (en) * 1994-11-28 1997-02-10 Mikrokemia Oy Method and apparatus for making thin films
JP3246708B2 (en) * 1995-05-02 2002-01-15 東京エレクトロン株式会社 Trap device and unreacted process gas exhaust mechanism using the same
KR100189981B1 (en) * 1995-11-21 1999-06-01 윤종용 Apparatus for fabricating semiconductor device with vacuum system
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5980638A (en) * 1997-01-30 1999-11-09 Fusion Systems Corporation Double window exhaust arrangement for wafer plasma processor
US6153260A (en) * 1997-04-11 2000-11-28 Applied Materials, Inc. Method for heating exhaust gas in a substrate reactor
US7829144B2 (en) * 1997-11-05 2010-11-09 Tokyo Electron Limited Method of forming a metal film for electrode
US6291800B1 (en) * 1998-02-20 2001-09-18 Tokyo Electron Limited Heat treatment apparatus and substrate processing system
JPH11307456A (en) * 1998-04-20 1999-11-05 Rohm Co Ltd Exhauster in semiconductor substrate surface treatment equipment
JP2000117045A (en) * 1998-10-20 2000-04-25 Sony Corp Waste gas treating device
JP2000349027A (en) * 1999-05-27 2000-12-15 Applied Materials Inc Semiconductor manufacture device
JP4731694B2 (en) * 2000-07-21 2011-07-27 東京エレクトロン株式会社 Semiconductor device manufacturing method and substrate processing apparatus
US6428859B1 (en) * 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6878402B2 (en) * 2000-12-06 2005-04-12 Novellus Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
US6820570B2 (en) * 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
KR100434493B1 (en) * 2001-10-05 2004-06-05 삼성전자주식회사 Apparatus for atomic layer deposition and method for operating the same
JP2003158080A (en) * 2001-11-22 2003-05-30 Mitsubishi Electric Corp Semiconductor manufacturing device, deposit removing method therein and manufacturing method for semiconductor device
US6954585B2 (en) * 2002-12-03 2005-10-11 Tokyo Electron Limited Substrate processing method and apparatus
JP4026529B2 (en) * 2003-04-10 2007-12-26 東京エレクトロン株式会社 Shower head structure and processing apparatus
US7537662B2 (en) * 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
WO2005042160A2 (en) * 2003-10-29 2005-05-12 Asm America, Inc. Reaction system for growing a thin film
JP4379585B2 (en) * 2003-12-17 2009-12-09 信越半導体株式会社 Vapor phase growth apparatus and epitaxial wafer manufacturing method
JP2005183511A (en) * 2003-12-17 2005-07-07 Shin Etsu Handotai Co Ltd Vapor phase growing apparatus and method of manufacturing epitaxial wafer
JP4642379B2 (en) * 2004-05-12 2011-03-02 東京エレクトロン株式会社 Exhaust collector
US20070134821A1 (en) * 2004-11-22 2007-06-14 Randhir Thakur Cluster tool for advanced front-end processing
US8282768B1 (en) * 2005-04-26 2012-10-09 Novellus Systems, Inc. Purging of porogen from UV cure chamber
US7439338B2 (en) * 2005-06-28 2008-10-21 Micron Technology, Inc. Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
KR20070001504A (en) * 2005-06-29 2007-01-04 삼성전자주식회사 Linking duct and exhaust apparatus having the liking duct
JP4282650B2 (en) * 2005-10-03 2009-06-24 エルピーダメモリ株式会社 Plasma processing equipment
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US8398816B1 (en) * 2006-03-28 2013-03-19 Novellus Systems, Inc. Method and apparatuses for reducing porogen accumulation from a UV-cure chamber
US7709391B2 (en) * 2006-01-20 2010-05-04 Applied Materials, Inc. Methods for in-situ generation of reactive etch and growth specie in film formation processes
US20070218701A1 (en) * 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor
TW200809926A (en) * 2006-05-31 2008-02-16 Sumco Techxiv Corp Apparatus and method for depositing layer on substrate
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US20080220150A1 (en) * 2007-03-05 2008-09-11 Applied Materials, Inc. Microbatch deposition chamber with radiant heating
US8226770B2 (en) * 2007-05-04 2012-07-24 Applied Materials, Inc. Susceptor with backside area of constant emissivity
US7655543B2 (en) * 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US8398777B2 (en) * 2008-05-02 2013-03-19 Applied Materials, Inc. System and method for pedestal adjustment
JP5092975B2 (en) * 2008-07-31 2012-12-05 株式会社Ｓｕｍｃｏ Epitaxial wafer manufacturing method
US9175388B2 (en) * 2008-11-01 2015-11-03 Ultratech, Inc. Reaction chamber with removable liner
US8147137B2 (en) * 2008-11-19 2012-04-03 Applied Materials, Inc. Pyrometry for substrate processing
JP5268766B2 (en) * 2009-04-23 2013-08-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Film forming reaction apparatus and film forming substrate manufacturing method
JP5276679B2 (en) * 2011-02-01 2013-08-28 東京エレクトロン株式会社 Deposition equipment
US20120222813A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Vacuum chambers with shared pump
KR101884003B1 (en) * 2011-03-22 2018-07-31 어플라이드 머티어리얼스, 인코포레이티드 Liner assembly for chemical vapor deposition chamber
US9322097B2 (en) * 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
US9117670B2 (en) * 2013-03-14 2015-08-25 Sunedison Semiconductor Limited (Uen201334164H) Inject insert liner assemblies for chemical vapor deposition systems and methods of using same
CN111211074B (en) * 2013-04-30 2023-09-22 应用材料公司 Gas flow control liner with spatially distributed gas passages

Also Published As

Publication number Publication date
WO2014066067A1 (en) 2014-05-01
US20140116336A1 (en) 2014-05-01
TW201423835A (en) 2014-06-16

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