JP2007266455A - Substrate processing apparatus and method, and storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of increasing the degree of freedom of arrangement and efficiently removing an oxide layer. <P>SOLUTION: The second process unit 34 of a second process ship 12 comprises: a chamber 38 for housing a wafer W for which a deposit film 126 with an SiO<SB>2</SB>layer 123 is formed, an ESC 39 arranged inside the chamber 38 for mounting the wafer W, a heater 103 of a shower head 40 arranged so as to face the ESC 39, a plurality of pusher pins 56 which can be freely projected from the upper surface of the ESC 39, an ammonia gas supply system 105 for supplying ammonia gas into the chamber 38, and a hydrofluoric gas supply system 127 for supplying hydrofluoric gas into the chamber 38. The pusher pins 56 move the wafer W for which a product is generated on a surface from the SiO<SB>2</SB>layer 123, the ammonia gas and the hydrofluoric gas to the vicinity of the heater 103. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus, a substrate processing method, and a storage medium, and more particularly to a substrate processing apparatus and a substrate processing method for removing an oxide layer.

  In an electronic device manufacturing method for manufacturing an electronic device from a silicon wafer (hereinafter simply referred to as a “wafer”), a film forming process such as CVD (Chemical Vapor Deposition) for forming a conductive film or an insulating film on the surface of the wafer, A lithography process for forming a photoresist layer having a desired pattern on the formed conductive film or insulating film, and forming the conductive film into a gate electrode by plasma generated from a processing gas using the photoresist layer as a mask, Alternatively, an etching process for forming a wiring groove or a contact hole in the insulating film is sequentially repeated.

For example, in a manufacturing method of an electronic device, a polysilicon layer formed on a wafer may be etched. In this case, a deposit film made of a SiO ₂ layer is formed on the side surface of the trench formed on the wafer.

Incidentally, the SiO ₂ layer defects of the electronic device, for example, it will cause conduction failure, it is necessary to remove. As a method for removing the SiO ₂ layer, a substrate processing method is known in which a wafer is subjected to COR (Chemical Oxide Removal) processing and PHT (Post Heat Treatment) processing. The COR process is a process of generating a product by chemically reacting the SiO ₂ layer and gas molecules, and the PHT process is performed on the wafer by the COR process chemical reaction by heating the COR-processed wafer. In this process, the resulting product is removed from the wafer by vaporization and thermal oxidation.

As a substrate processing apparatus that executes the substrate processing method including the COR process and the PHT process, a substrate processing apparatus including a chemical reaction processing apparatus and a heat treatment apparatus connected to the chemical reaction processing apparatus is known. The chemical reaction processing apparatus includes a chamber, and performs a COR process on a wafer accommodated in the chamber. The heat treatment apparatus also includes a chamber, and performs a PHT process on a wafer accommodated in the chamber (see, for example, Patent Document 1).
US Patent Application Publication No. 2004/0185670

  However, since the above-described substrate processing apparatus requires a chemical reaction processing apparatus and a heat treatment apparatus, the size of the substrate processing apparatus becomes large, and in the substrate processing system including the substrate processing apparatus, the arrangement of the substrate processing apparatus is increased. There is a problem that the degree of freedom is low.

In addition, the COR process and the PHT process need to be performed by a chemical reaction processing apparatus and a heat treatment apparatus, respectively, and there is a problem that the SiO ₂ layer cannot be efficiently removed by wafer transfer or the like.

  Moreover, the conventional heat processing apparatus has the mounting base arrange | positioned in a chamber, and this mounting base incorporates a heater. During the PHT process, the wafer is mounted on the mounting table and heated by the heater. However, there is a problem that it is difficult to adjust the temperature of the wafer by the heater.

  A first object of the present invention is to provide a substrate processing apparatus, a substrate processing method, and a storage medium that have a high degree of freedom in arrangement and can efficiently remove an oxide layer.

  A second object of the present invention is to provide a substrate processing apparatus, a substrate processing method, and a storage medium that can easily adjust the temperature of the substrate.

  In order to achieve the first object, a substrate processing apparatus according to claim 1 is a substrate processing apparatus for performing processing on a substrate having an oxide layer formed on a surface thereof, and has a storage chamber for storing the substrate. In the substrate processing apparatus, an ammonia gas supply system that supplies ammonia gas into the storage chamber, a hydrogen fluoride gas supply system that supplies hydrogen fluoride gas into the storage chamber, and heat radiated toward the storage chamber A heating element and a substrate moving device that moves the substrate accommodated in the accommodation chamber to the vicinity of the heating element are provided.

  The substrate processing apparatus according to claim 2 is the substrate processing apparatus according to claim 1, further comprising a mounting table disposed in the storage chamber and mounting the substrate, wherein the heating element faces the mounting table, The substrate moving device is composed of a plurality of rod-like members that can protrude from the mounting table toward the heating element.

  According to a third aspect of the present invention, there is provided the substrate processing apparatus according to the second aspect, wherein the mounting table includes an inert gas ejection portion that ejects an inert gas.

  A substrate processing apparatus according to a fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein the substrate moving device adjusts a distance between the substrate and the heating element.

  The substrate processing apparatus according to claim 5 is the substrate processing apparatus according to claim 4, wherein a distance L between the substrate and the heating element is 0 mm <L <10 mm.

  The substrate processing apparatus according to claim 6 is the substrate processing apparatus according to any one of claims 1 to 5, wherein the ammonia gas supply system supplies ozone gas or oxygen radicals into the accommodation chamber. .

  A substrate processing apparatus according to a seventh aspect is the substrate processing apparatus according to any one of the first to fifth aspects, further comprising an ozone gas supply system that supplies ozone gas into the housing chamber.

  A substrate processing apparatus according to an eighth aspect is the substrate processing apparatus according to any one of the first to fifth aspects, further comprising an oxygen radical supply system that supplies oxygen radicals into the housing chamber.

  In order to achieve the first object, a substrate processing method according to claim 9 includes a storage chamber for storing a substrate having an oxide layer formed on a surface thereof, and a heating element that radiates heat toward the storage chamber. A substrate processing method for processing a substrate in a substrate processing apparatus comprising: an ammonia gas supply step for supplying ammonia gas into the housing chamber; and a hydrogen fluoride gas for supplying hydrogen fluoride gas into the housing chamber And a substrate moving step of moving the substrate accommodated in the accommodating chamber to the vicinity of the heating element.

  A substrate processing method according to a tenth aspect is the substrate processing method according to the ninth aspect, further comprising an ozone gas supply step of supplying ozone gas into the accommodation chamber.

  A substrate processing method according to an eleventh aspect is the substrate processing method according to the ninth aspect, further comprising an oxygen radical supply step of supplying oxygen radicals into the accommodation chamber.

  In order to achieve the first object, a storage medium according to claim 12 includes a storage chamber that stores a substrate having an oxide layer formed on a surface thereof, and a heating element that radiates heat toward the storage chamber. A computer-readable storage medium storing a program for causing a computer to execute a substrate processing method for processing the substrate in a substrate processing apparatus comprising: an ammonia gas supply for supplying ammonia gas into the storage chamber A module, a hydrogen fluoride gas supply module for supplying hydrogen fluoride gas into the housing chamber, and a substrate moving module for moving the substrate housed in the housing chamber to the vicinity of the heating element. .

  In order to achieve the second object, the substrate processing apparatus according to claim 13 is a substrate processing apparatus for processing a substrate on which a product generated from an oxide layer, ammonia and hydrogen fluoride is formed. In the substrate processing apparatus including a storage chamber for storing the substrate, a heating element that radiates heat toward the storage chamber, and a substrate that moves the substrate stored in the storage chamber to the vicinity of the heating element And a moving device.

  The substrate processing apparatus according to claim 14 is the substrate processing apparatus according to claim 13, further comprising: a mounting table disposed in the storage chamber for mounting the substrate, wherein the heating element faces the mounting table, The substrate moving device is composed of a plurality of rod-like members that can protrude from the mounting table toward the heating element.

  A substrate processing apparatus according to a fifteenth aspect is the substrate processing apparatus according to the thirteenth or fourteenth aspect, further comprising an ozone gas supply system that supplies ozone gas into the accommodation chamber.

  A substrate processing apparatus according to a sixteenth aspect is the substrate processing apparatus according to the thirteenth or fourteenth aspect, further comprising an oxygen radical supply system that supplies oxygen radicals into the accommodation chamber.

  In order to achieve the second object, a substrate processing method according to claim 17, wherein a storage chamber for storing a substrate having a product formed from an oxide layer, ammonia and hydrogen fluoride formed on a surface thereof; A substrate processing method for processing a substrate in a substrate processing apparatus comprising a heating element that radiates heat toward the storage chamber, wherein the substrate is moved to the vicinity of the heating element. It has a movement step.

  In order to achieve the second object, a storage medium according to claim 18 is provided with a storage chamber for storing a substrate having a product formed from an oxide layer, ammonia and hydrogen fluoride formed on a surface thereof; A computer-readable storage medium for storing a program for causing a computer to execute a substrate processing method for processing the substrate in a substrate processing apparatus including a heating element that radiates heat toward the accommodation chamber, A substrate moving module for moving the substrate accommodated in the accommodating chamber to the vicinity of the heating element is provided.

  According to the substrate processing apparatus of claim 1, the substrate processing method of claim 9, and the storage medium of claim 12, ammonia gas and fluorine are contained in a storage chamber in which a substrate having an oxide layer formed thereon is stored. Hydrogen fluoride gas is supplied, and the substrate is moved to the vicinity of the heating element. When the oxide layer is exposed to an atmosphere of ammonia gas and hydrogen fluoride gas, a product based on the oxide layer, ammonia and hydrogen fluoride is produced. When the substrate on which the product is generated is moved to the vicinity of the heating element, the generated product is heated and vaporized. That is, since the oxide layer can be removed in one storage chamber, the size of the substrate processing apparatus can be reduced, and therefore, the arrangement of the substrate processing apparatus in the substrate processing system including the substrate processing apparatus can be reduced. The degree of freedom can be increased and the oxide layer can be efficiently removed.

  According to the substrate processing apparatus according to claim 2 and the substrate processing apparatus according to claim 14, the heating element faces the mounting table on which the substrate is mounted, and the plurality of rod-shaped members that can protrude from the mounting table toward the heating element. Since the substrate is moved to the vicinity of the heating element, the substrate can be stably moved to the vicinity of the heating element, and the generated product can be reliably heated.

  According to the substrate processing apparatus of the third aspect, since the inert gas ejection part of the mounting table ejects the inert gas, the product heated and vaporized by the ejected inert gas adheres again to the mounting table. Can be prevented.

  According to the substrate processing apparatus of claim 4, since the substrate moving device adjusts the distance between the substrate and the heating element, the temperature of the substrate can be set to an optimum temperature for vaporizing the product. Vaporization can be promoted and the oxide layer can be removed more efficiently.

  According to the substrate processing apparatus of the fifth aspect, since the distance L between the substrate and the heating element adjusted by the substrate moving device is 0 mm <L <10 mm, the temperature of the substrate can be rapidly increased. The material layer can be removed more efficiently.

  According to the substrate processing apparatus of the sixth aspect, ozone gas or oxygen radicals are supplied into the accommodation chamber. In the substrate in which the oxide layer covers the organic material layer, when the product generated from the oxide layer is vaporized to expose the organic material layer, the exposed organic material layer is exposed to the supplied ozone gas or oxygen radical, and the ozone gas Or oxygen radicals decompose the organic layer. Therefore, the organic layer can be continuously removed following the oxide layer, and thus the oxide layer and the organic layer can be efficiently removed. Further, since the ammonia gas supply system supplies ozone gas or oxygen radicals, it is not necessary to provide an ozone gas supply system or oxygen radical supply system, and the size of the substrate processing apparatus can be further reduced.

  According to the substrate processing apparatus of claim 7, the substrate processing apparatus of claim 15, and the substrate processing method of claim 10, ozone gas is supplied into the accommodation chamber. In the substrate where the oxide layer covers the organic layer, when the product generated from the oxide layer is vaporized and the organic layer is exposed, the exposed organic layer is exposed to the supplied ozone gas, and the ozone gas is exposed to the organic layer. Disassemble. Therefore, the organic layer can be continuously removed following the oxide layer, and thus the oxide layer and the organic layer can be efficiently removed.

  According to the substrate processing apparatus of claim 8, the substrate processing apparatus of claim 16, and the substrate processing method of claim 11, oxygen radicals are supplied into the accommodation chamber. In the substrate in which the oxide layer covers the organic material layer, when the product generated from the oxide layer is vaporized and the organic material layer is exposed, the exposed organic material layer is exposed to the supplied oxygen radical, and the oxygen radical is Decompose the organic layer. Therefore, the organic layer can be continuously removed following the oxide layer, and thus the oxide layer and the organic layer can be efficiently removed.

  According to the substrate processing apparatus according to claim 13, the substrate processing method according to claim 17, and the storage medium according to claim 18, a product generated from the oxide layer, ammonia and hydrogen fluoride is formed on the surface. In the storage chamber in which the substrate is stored, the substrate is moved to the vicinity of the heating element. When the substrate on which the product is generated is moved to the vicinity of the heating element, the generated product is heated and vaporized. At this time, the amount of heat received by the substrate only by adjusting the distance between the substrate and the heating element. Therefore, the temperature of the substrate can be easily adjusted.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a plan view showing a schematic configuration of a substrate processing system including a substrate processing apparatus according to the present embodiment.

  In FIG. 1, a substrate processing system 10 includes a first process ship 11 for performing an etching process on a wafer for electronic devices (hereinafter simply referred to as a “wafer”) W (substrate), and the first process ship 11. A second process ship 12 (substrate processing apparatus) that performs COR processing, PHT processing, and organic layer removal processing, which will be described later, on the wafer W that is arranged in parallel and has been subjected to etching processing in the first process ship 11; And a loader unit 13 as a rectangular common transfer chamber to which the process ship 11 and the second process ship 12 are respectively connected.

  In addition to the first process ship 11 and the second process ship 12 described above, a FOUP (Front Opening Unified Pod) 14 as a container for containing 25 wafers W is mounted on the loader unit 13 3 Two hoop mounting tables 15, an orienter 16 that pre-aligns the position of the wafer W carried out of the hoop 14, and first and second IMS (Integrated Metrology System, Therma-Wave, Inc.) that measure the surface state of the wafer W. .) 17 and 18 are connected.

  The first process ship 11 and the second process ship 12 are connected to the side wall in the longitudinal direction of the loader unit 13 and are arranged so as to face the three hoop mounting tables 15 with the loader unit 13 interposed therebetween. Is disposed at one end in the longitudinal direction of the loader unit 13, the first IMS 17 is disposed at the other end in the longitudinal direction of the loader unit 13, and the second IMS 18 is disposed in parallel with the three hoop mounting tables 15.

  The loader unit 13 serves as a loading port for the wafer W disposed on the side wall so as to correspond to the SCARA dual arm type transport arm mechanism 19 that transports the wafer W and the FOUP mounting table 15. And three load ports 20. The transfer arm mechanism 19 takes out the wafer W from the FOUP 14 placed on the FOUP placement table 15 via the load port 20, and removes the taken wafer W from the first process ship 11, the second process ship 12, and the orienter 16. , Carry in / out to the first IMS 17 and the second IMS 18.

  The first IMS 17 is an optical system monitor, and includes a mounting table 21 on which the loaded wafer W is mounted, and an optical sensor 22 that directs the wafer W mounted on the mounting table 21. The surface shape, for example, the film thickness of the surface layer, and the CD (Critical Dimension) value of the wiring trench, the gate electrode, etc. are measured. The second IMS 18 is also an optical system monitor, and has a mounting table 23 and an optical sensor 24 as in the first IMS 17, and measures the number of particles on the surface of the wafer W.

  The first process ship 11 includes a first process unit 25 that performs etching on the wafer W, and a link type single pick type first transfer arm 26 that delivers the wafer W to the first process unit 25. And a first load / lock unit 27.

  The first process unit 25 has a cylindrical processing chamber container (chamber), and an upper electrode and a lower electrode arranged in the chamber, and the distance between the upper electrode and the lower electrode is on the wafer W. An appropriate interval for performing the etching process is set. Further, the lower electrode has an ESC 28 at the top thereof for chucking the wafer W by Coulomb force or the like.

  In the first process unit 25, a processing gas is introduced into the chamber, and an electric field is generated between the upper electrode and the lower electrode, whereby the introduced processing gas is turned into plasma to generate ions and radicals. Thus, the wafer W is etched.

  In the first process ship 11, the internal pressure of the loader unit 13 is maintained at atmospheric pressure, while the internal pressure of the first process unit 25 is maintained at vacuum. Therefore, the first load / lock unit 27 includes a vacuum gate valve 29 at the connection portion with the first process unit 25 and an atmospheric gate valve 30 at the connection portion with the loader unit 13. It is configured as a vacuum pre-transfer chamber that can adjust the pressure.

  Inside the first load / lock unit 27, a first transfer arm 26 is installed at a substantially central portion, and a first buffer 31 is installed on the first process unit 25 side from the first transfer arm 26. Then, the second buffer 32 is installed on the loader unit 13 side from the first transfer arm 26. The first buffer 31 and the second buffer 32 are arranged on the trajectory on which the support part (pick) 33 supporting the wafer W arranged at the tip part of the first transfer arm 26 moves, and has been subjected to the etching process. By temporarily retracting the wafer W above the track of the support portion 33, it is possible to smoothly exchange the unprocessed wafer W and the etched wafer W in the first process unit 25.

  The second process ship 12 is connected to a second process unit 34 that performs COR processing, PHT processing, and organic layer removal processing on the wafer W, and is connected to the second process unit 34 via a vacuum gate valve 35. A second load / lock unit 49 having a second transfer arm 37 of a link type single pick type for delivering the wafer W to the second process unit 34;

  2 is a cross-sectional view of the second process unit in FIG. 1, (A) is a cross-sectional view taken along line II-II in FIG. 1, and (B) is an enlarged view of part A in FIG. 2 (A). FIG.

  2A, the second process unit 34 includes a cylindrical processing chamber container (chamber) 38 (accommodating chamber), an ESC 39 as a mounting table for the wafer W arranged in the chamber 38, and a chamber. Is disposed between the chamber 38 and the TMP 41, the shower head 40 disposed so as to be opposed to the ESC 39, the TMP (Turbo Molecular Pump) 41 that exhausts gas in the chamber 38, and the like in the chamber 38. And an APC (Adaptive Pressure Control) valve 42 as a variable butterfly valve for controlling pressure.

  The shower head 40 has a two-layer structure including a lower layer portion 43 and an upper layer portion 44, and has a first buffer chamber 45 and a second buffer chamber 46 in each of the lower layer portion 43 and the upper layer portion 44. The first buffer chamber 45 and the second buffer chamber 46 communicate with the chamber 38 through gas vents 47 and 48, respectively. That is, the shower head 40 has two plate-like bodies (lower layers) stacked in a layered manner having internal passages into the gas chambers 38 for the gases supplied to the first buffer chamber 45 and the second buffer chamber 46, respectively. Part 43 and upper layer part 44).

  The lower layer portion 43 of the shower head 40 has a disk-like heater 103 (heating element) below the first buffer chamber 45. The heater 103 is composed of a heating wire or the like, and radiates heat toward the chamber 38. The heater 103 is connected to the heater control unit 104, and the heater control unit 104 controls the amount of heat generated by the heater 103.

  Note that the second process unit 34 may include a lamp disposed in the chamber 38 instead of the heater 103 as a heating element.

The lower layer 43 of the shower head 40 is connected to an NH ₃ (ammonia) gas supply system 105. The ammonia gas supply system 105 is connected to the ammonia gas supply pipe 57 communicating with the first buffer chamber 45 of the lower layer 43, the ammonia gas valve 106 disposed in the ammonia gas supply pipe 57, and the ammonia gas supply pipe 57. And an ammonia gas supply unit 107. The ammonia gas supply unit 107 supplies ammonia gas to the first buffer chamber 45 via the ammonia gas supply pipe 57. The ammonia gas supply unit 107 adjusts the flow rate of the supplied ammonia gas. The ammonia gas valve 106 can freely block and communicate the ammonia gas supply pipe 57.

  The ammonia gas supply system 105 includes a nitrogen gas supply unit 108, a nitrogen gas supply pipe 109 connected to the nitrogen gas supply unit 108, and a nitrogen gas valve 110 disposed in the nitrogen gas supply pipe 109. The nitrogen gas supply pipe 109 is connected to the ammonia gas supply pipe 57 between the first buffer chamber 45 and the ammonia gas valve 106. The nitrogen gas supply unit 108 supplies nitrogen gas to the first buffer chamber 45 via the nitrogen gas supply pipe 109 and the ammonia gas supply pipe 57. Further, the nitrogen gas supply unit 108 adjusts the flow rate of the supplied nitrogen gas. The nitrogen gas valve 110 can freely block and communicate the nitrogen gas supply pipe 109.

  The ammonia gas supply system 105 includes an ozone gas supply unit 111, an ozone gas supply pipe 112 connected to the ozone gas supply part 111, and an ozone gas valve 113 disposed on the ozone gas supply pipe 112. The ozone gas supply pipe 112 is also connected to the ammonia gas supply pipe 57 between the first buffer chamber 45 and the ammonia gas valve 106. The ozone gas supply unit 111 supplies ozone gas to the first buffer chamber 45 through the ozone gas supply pipe 112 and the ammonia gas supply pipe 57. The ozone gas supply unit 111 adjusts the flow rate of the ozone gas to be supplied. The ozone gas valve 113 can freely block and communicate the ozone gas supply pipe 112.

  The ammonia gas supply system 105 switches the type of gas supplied to the first buffer chamber 45 and then into the chamber 38 by switching the opening and closing of the ammonia gas valve 106, the nitrogen gas valve 110 and the ozone gas valve 113. Specifically, when performing COR processing on the wafer W, ammonia gas is supplied to the first buffer chamber 45 from the ammonia gas supply system 105, and the supplied ammonia gas is supplied to the chamber 38 through the gas vent 47. Supplied in. When performing the PHT process on the wafer W, nitrogen gas is supplied from the ammonia gas supply system 105 to the first buffer chamber 45, and the supplied nitrogen gas is supplied into the chamber 38 through the gas vent hole 47. Is done. Further, when the organic layer removal processing is performed on the wafer W, ozone gas is supplied from the ammonia gas supply system 105 to the first buffer chamber 45, and the supplied ozone gas is supplied into the chamber 38 through the gas vent 47. Is done.

  The upper layer portion 44 of the shower head 40 is connected to an HF (hydrogen fluoride) gas supply system 127. The hydrogen fluoride gas supply system 127 includes a hydrogen fluoride gas supply pipe 58 communicating with the second buffer chamber 46 of the upper layer portion 44, a hydrogen fluoride gas valve 114 disposed in the hydrogen fluoride gas supply pipe 58, and a fluorine fluoride gas supply pipe 58. A hydrogen fluoride gas supply unit 115 connected to the hydrogen fluoride gas supply pipe 58. The hydrogen fluoride gas supply unit 115 supplies hydrogen fluoride gas to the second buffer chamber 46 via the hydrogen fluoride gas supply pipe 58. Further, the hydrogen fluoride gas supply unit 115 adjusts the flow rate of the supplied hydrogen fluoride gas. The hydrogen fluoride gas valve 114 can freely block and communicate the hydrogen fluoride gas supply pipe 58. The upper layer portion 44 of the shower head 40 incorporates a heater (not shown), for example, a heating element. This heating element controls the temperature of the hydrogen fluoride gas in the second buffer chamber 46.

  In the shower head 40, the ammonia gas supply unit 107 of the ammonia gas supply system 105 and the hydrogen fluoride gas supply unit 115 of the hydrogen fluoride gas supply system 127 cooperate to cooperate with the ammonia gas supplied to the chamber 38 and the fluoride. Adjust the volume flow ratio of hydrogen gas.

  In the shower head 40, as shown in FIG. 2B, the openings into the chamber 38 in the gas vent holes 47 and 48 are formed in a divergent shape. Thereby, ammonia gas, nitrogen gas, ozone gas, and hydrogen fluoride gas can be efficiently diffused into the chamber 38. Further, since the gas vent holes 47 and 48 have a constricted cross section, the deposits generated in the chamber 38 are directed to the gas vent holes 47 and 48, and then to the first buffer chamber 45 and the second buffer chamber 46. Prevent backflow. The gas vents 47 and 48 may be spiral vents.

  Since the second process unit 34 is designed so that ammonia gas and hydrogen fluoride gas are mixed in the chamber 38 for the first time (postmix design), until the two kinds of gases are introduced into the chamber 38. The two kinds of mixed gases are prevented from being mixed, and the hydrogen fluoride gas and the ammonia gas are prevented from reacting before being introduced into the chamber 38.

  In the second process unit 34, the side wall of the chamber 38 incorporates a heater (not shown), for example, a heating element, and prevents the ambient temperature in the chamber 38 from being lowered. Thereby, the reproducibility of the COR processing can be improved. The heating element in the side wall prevents the by-product generated in the chamber 38 during the COR process from adhering to the inside of the side wall by controlling the temperature of the side wall.

  The ESC 39 has an electrode plate (not shown) to which a DC voltage is applied, and adsorbs and holds the wafer W by a Coulomb force or a Johnson-Rahbek force generated by the DC voltage. The ESC 39 has an annular refrigerant chamber 102 as a temperature control mechanism. The refrigerant chamber 102 is connected to the chiller unit 60 via the refrigerant pipe 101. The chiller unit 60 supplies a coolant having a predetermined temperature, such as cooling water or a Galden solution, to the coolant chamber 102, and the processing temperature of the wafer W adsorbed and held on the upper surface of the ESC 39 is controlled by the temperature of the coolant.

  The ESC 39 has a plurality of inert gas ejection holes 116 (inert gas ejection portions) for ejecting an inert gas such as nitrogen gas or oxygen gas from the upper surface of the ESC 39. The inert gas ejection hole 116 is connected to an inert gas supply unit 118 through an inert gas supply pipe 117. Each inert gas ejection hole 116 ejects an inert gas so as to cover the surface of the ESC 39 during the PHT process.

  Further, the ESC 39 has a heat transfer gas supply system (not shown) that uniformly supplies heat transfer gas (helium gas) between the upper surface of the ESC 39 and the back surface of the wafer. During the COR process, the heat transfer gas performs heat exchange between the wafer and the ESC 39 maintained at a desired designated temperature by the refrigerant, thereby efficiently and uniformly cooling the wafer.

  The ESC 39 has a plurality of pusher pins 56 (substrate moving devices) that can protrude from the upper surface thereof. The pusher pins 56 support the back surface of the wafer W placed on the ESC 39 and move the wafer W to the vicinity of the heater 103 of the shower head 40. Each pusher pin 56 is made of a rod member made of ceramic or stainless steel, and at least one of the pusher pins 56 has a temperature sensor (not shown) that measures the temperature of the back surface of the wafer W by fluorescence. Each pusher pin 56 is driven by a motor (not shown), and the amount of protrusion is freely adjusted by the motor. Accordingly, each pusher pin 56 can adjust the distance between the wafer W and the heater 103. The distance between the wafer W and the heater 103 may be changed according to the temperature of the back surface of the wafer W measured by the temperature sensor.

  Note that the pusher pin 56 does not have to be adjustable in its protrusion amount, and is multistage, at least three stages, specifically, when the wafer W is attracted and held on the ESC 39 (COR process). The amount of protrusion in three stages may be realized corresponding to the case of carrying in / out and the case where the wafer W is brought close to the heater 103 (PHT process, organic layer removal process).

  Returning to FIG. 1, the second load / lock unit 49 has a housing-like transfer chamber (chamber) 70 in which the second transfer arm 37 is built. Further, the internal pressure of the loader unit 13 is maintained at atmospheric pressure, while the internal pressure of the second process unit 34 is maintained at vacuum or below atmospheric pressure. Therefore, the second load / lock unit 49 includes the vacuum gate valve 35 at the connection portion with the second process unit 34 and the atmospheric door valve 55 at the connection portion with the loader unit 13. It is configured as a vacuum preliminary transfer chamber that can be adjusted.

  FIG. 3 is a perspective view showing a schematic configuration of the second process ship in FIG.

  In FIG. 3, the second process unit 34 includes a pressure gauge 59 for measuring the pressure in the chamber 38 in addition to the above-described components. A second process unit exhaust system 61 connected to a DP (Dry Pump) (not shown) is disposed below the second process unit 34. The second process unit exhaust system 61 includes an exhaust pipe 63 communicating with an exhaust duct 62 disposed between the chamber 38 and the APC valve 42, and an exhaust pipe 64 connected to the lower side (exhaust side) of the TMP 41. And exhausts the gas and the like in the chamber 38. The exhaust pipe 63 is connected to the exhaust pipe 64 before the DP.

  The second load / lock unit 49 includes a nitrogen gas supply pipe 71 that supplies nitrogen gas to the chamber 70, a pressure gauge 72 that measures the pressure in the chamber 70, and a second gas that exhausts nitrogen gas and the like in the chamber 70. The load / lock unit exhaust system 73 and an atmosphere communication pipe 74 that opens the inside of the chamber 70 to the atmosphere.

  The nitrogen gas supply pipe 71 is provided with an MFC (Mass Flow Controller) (not shown), and the MFC adjusts the flow rate of nitrogen gas supplied to the chamber 70. The second load / lock unit exhaust system 73 comprises one exhaust pipe, which communicates with the chamber 70 and is connected to a DP (not shown). The second load / lock unit exhaust system 73 and the atmosphere communication pipe 74 have an exhaust valve 75 and a relief valve 76 that can be opened and closed, respectively, and the exhaust valve 75 and the relief valve 76 cooperate with each other in the chamber 70. The pressure is adjusted from atmospheric pressure to any desired degree of vacuum.

  FIG. 4 is a diagram showing a schematic configuration of a unit driving dry air supply system of the second load / lock unit in FIG. 3.

In FIG. 4, the dry air supply destination of the unit drive dry air supply system 77 of the second load / lock unit 49 includes a door valve cylinder for driving the slide door of the atmospheric door valve 55, and nitrogen gas supply as the N ₂ purge unit. The MFC included in the pipe 71, the relief valve 76 included in the atmosphere communication pipe 74 serving as a relief unit for opening to the atmosphere, the exhaust valve 75 included in the second load / lock unit exhaust system 73 serving as the vacuuming unit, and the vacuum gate valve 35 Corresponds to a gate valve cylinder for driving a slide gate.

  The unit driving dry air supply system 77 includes a sub dry air supply pipe 79 branched from the main dry air supply pipe 78 included in the second process ship 12, a first solenoid valve 80 connected to the sub dry air supply pipe 79, and A second solenoid valve 81.

The first solenoid valve 80 is connected to the door valve cylinder, the MFC, the relief valve 76, and the gate valve cylinder via each of the dry air supply pipes 82, 83, 84, 85, and controls the amount of dry air supplied thereto. Thus, the operation of each part is controlled. The second solenoid valve 81 is connected to the exhaust valve 75 via a dry air supply pipe 86 and controls the operation of the exhaust valve 75 by controlling the amount of dry air supplied to the exhaust valve 75. The MFC in the nitrogen gas supply pipe 71 is also connected to a nitrogen (N ₂ ) gas supply system 87.

  The second process unit 34 also includes a unit driving dry air supply system having the same configuration as the unit driving dry air supply system 77 of the second load / lock unit 49 described above.

  Returning to FIG. 1, the substrate processing system 10 includes a system controller that controls the operations of the first process ship 11, the second process ship 12, and the loader unit 13, and an operation arranged at one end in the longitudinal direction of the loader unit 13. A panel 88 is provided.

  The operation panel 88 includes a display unit made up of, for example, an LCD (Liquid Crystal Display), and the display unit displays the operation status of each component of the substrate processing system 10.

  As shown in FIG. 5, the system controller includes an EC (Equipment Controller) 89, three MCs (Module Controllers) 90, 91, and 92, and a switching hub 93 that connects the EC 89 and each MC. The system controller is connected from the EC 89 via a LAN (Local Area Network) 170 to a PC 171 as a MES (Manufacturing Execution System) that manages the manufacturing process of the entire factory where the substrate processing system 10 is installed. The MES cooperates with the system controller to feed back real-time information relating to processes in the factory to a core business system (not shown) and makes a determination relating to the process in consideration of the load of the entire factory.

  The EC 89 is a main control unit (master control unit) that controls each MC and controls the operation of the entire substrate processing system 10. The EC 89 has a CPU, RAM, HDD, etc., and the CPU sends a control signal to each MC in accordance with the wafer W processing method designated by the user or the like on the operation panel 88, that is, a program corresponding to the recipe. By doing so, the operations of the first process ship 11, the second process ship 12, and the loader unit 13 are controlled.

  The switching hub 93 switches the MC as a connection destination of the EC 89 in accordance with a control signal from the EC 89.

  MCs 90, 91, and 92 are sub-control units (slave control units) that control the operations of the first process ship 11, the second process ship 12, and the loader unit 13, respectively. Each MC is connected to each I / O (input / output) module 97, 98, 99 via a GHOST network 95 by a DIST (Distribution) board 96. The GHOST network 95 is a network realized by an LSI called a GHOST (General High-Speed Optimum Scalable Transceiver) mounted on an MC board included in each MC. A maximum of 31 I / O modules can be connected to the GHOST network 95. In the GHOST network 95, the MC corresponds to the master and the I / O module corresponds to the slave.

  The I / O module 98 includes a plurality of I / O units 100 connected to each component (hereinafter referred to as “end device”) in the second process ship 12, and includes a control signal and each of the end devices. Transmits output signals from end devices. The end device connected to the I / O unit 100 in the I / O module 98 includes, for example, a chiller unit 60 in the second process unit 34, an inert gas supply unit 118, an ammonia gas supply unit 107, an ammonia gas valve 106, In the nitrogen gas supply unit 108, the nitrogen gas valve 110, the ozone gas supply unit 111, the ozone gas valve 113, the hydrogen fluoride gas supply unit 115, the hydrogen fluoride gas valve 114, the pressure gauge 59 and the APC valve 42, and the second load / lock unit 49 This corresponds to the MFC of the nitrogen gas supply pipe 71, the pressure gauge 72, the second transfer arm 37, the first solenoid valve 80, the second solenoid valve 81, and the like in the unit driving dry air supply system 77.

  The I / O modules 97 and 99 have the same configuration as the I / O module 98 and correspond to the connection relationship between the MC 90 and the I / O module 97 corresponding to the first process ship 11 and the loader unit 13. Since the connection relationship between the MC 92 and the I / O module 99 is the same as the connection relationship between the MC 91 and the I / O module 98 described above, description thereof will be omitted.

  Each GHOST network 95 is also connected to an I / O board (not shown) that controls input / output of digital signals, analog signals, and serial signals in the I / O unit 100.

  When the COR processing is performed on the wafer W in the substrate processing system 10, the CPU of the EC 89 performs I / O in the switching hub 93, MC 91, GHOST network 95, and I / O module 98 according to the program corresponding to the COR processing recipe. The COR process is executed in the second process unit 34 by transmitting a control signal to a desired end device via the / O unit 100.

  Specifically, the CPU closes these by sending control signals to the nitrogen gas valve 110 and the ozone gas valve 113, and sends control signals to the ammonia gas supply unit 107 and the hydrogen fluoride gas supply unit 115 to send the control signal to the chamber. The volume flow ratio of ammonia gas and hydrogen fluoride gas in 38 is adjusted to a desired value, and a control signal is transmitted to the TMP 41 and the APC valve 42 to adjust the pressure in the chamber 38 to a desired value. At this time, the pressure gauge 59 transmits the pressure value in the chamber 38 as an output signal to the CPU of the EC 89, and the CPU based on the transmitted pressure value in the chamber 38, the ammonia gas supply unit 107, the fluoride Control parameters of the hydrogen gas supply unit 115, the APC valve 42, and the TMP 41 are determined.

  When performing the PHT process on the wafer W, the CPU of the EC 89 transmits a control signal to a desired end device in accordance with a program corresponding to the recipe of the PHT process, so that the second process unit 34 performs the PHT process. Execute.

  Specifically, the CPU closes these by sending control signals to the ammonia gas valve 106 and the ozone gas valve 113, and sends the control signals to the nitrogen gas supply unit 108 and the APC valve 42 to thereby increase the pressure in the chamber 38. The wafer W is moved to the vicinity of the heater 103 by transmitting a control signal to a motor that drives the pusher pin 56 and the distance between the wafer W and the heater 103 is adjusted by adjusting the distance between the wafer W and the wafer W. Is adjusted to a desired temperature. At this time, the temperature sensors of the pressure gauge 59 and the pusher pin 56 transmit the pressure value in the chamber 38 and the temperature of the back surface of the wafer W as output signals to the CPU of the EC 89, and the CPU transmits the transmitted pressure value and temperature. The control parameters of the motor that drives the APC valve 42, the nitrogen gas supply unit 108, and the pusher pin 56 are determined.

  Further, when the organic layer removal process is performed on the wafer W, the CPU of the EC 89 transmits a control signal to a desired end device in accordance with a program corresponding to the recipe for the organic layer removal process, thereby the second process unit. In 34, an organic layer removal process is executed.

  Specifically, the CPU closes these by sending control signals to the ammonia gas valve 106 and the nitrogen gas valve 110, and sends the control signals to the ozone gas supply unit 111 and the APC valve 42, thereby adjusting the pressure in the chamber 38. The temperature of the wafer W is adjusted to a desired temperature by adjusting the distance between the wafer W and the heater 103 by adjusting the distance to the desired value and transmitting a control signal to the motor that drives the pusher pin 56. At this time, the temperature sensors of the pressure gauge 59 and the pusher pin 56 transmit the pressure value in the chamber 38 and the temperature of the back surface of the wafer W as output signals to the CPU of the EC 89, and the CPU transmits the transmitted pressure value and temperature. The control parameters of the motor that drives the APC valve 42, the ozone gas supply unit 111, and the pusher pin 56 are determined.

  In the system controller of FIG. 5, the plurality of end devices are not directly connected to the EC 89, but the I / O unit 100 connected to the plurality of end devices is modularized to form an I / O module. Since the / O module is connected to the EC 89 via the MC and the switching hub 93, the communication system can be simplified.

  Further, the control signal transmitted by the CPU of the EC 89 includes the address of the I / O unit 100 connected to the desired end device and the address of the I / O module including the I / O unit 100. The switching hub 93 refers to the address of the I / O module in the control signal, and the GHOST of the MC refers to the address of the I / O unit 100 in the control signal, so that the switching hub 93 and the MC transmit the control signal to the CPU. It is possible to eliminate the necessity of making the previous inquiry, thereby realizing smooth transmission of the control signal.

By the way, when the wafer W having the polysilicon film 119, the SiO ₂ film 120, and the polysilicon film 121 laminated in order on the surface is etched, the side surface of the trench 122 formed on the wafer has SiO 2 as shown in FIG. _A deposit film 126 composed of the _two layers 123, the CF-based deposit layer 124 and the SiO ₂ layer 125 is formed. These SiO ₂ layers 123 and 125 and the CF-based deposit layer 124 cause defects in the electronic device, for example, poor conduction, and need to be removed.

  Correspondingly, the substrate processing method according to the present embodiment performs COR processing, PHT processing, and organic layer removal processing on the wafer W having the deposit film 126 formed on the side surface of the trench in the second process unit 34. Apply.

In the substrate processing method according to the present embodiment, ammonia gas and hydrogen fluoride gas are used in the COR processing. Here, the hydrogen fluoride gas accelerates the corrosion of the SiO ₂ layer, and the ammonia gas restricts the reaction between the oxide film (SiO ₂ layer) and the hydrogen fluoride gas as necessary, and finally stops. A reaction by-product (By-product) is synthesized. Specifically, in the substrate processing method according to the present embodiment, the following chemical reaction is used in the COR processing and the PHT processing.
(COR processing)
SiO ₂ + 4HF → SiF ₄ + 2H ₂ O ↑
SiF ₄ + 2NH ₃ + 2HF → (NH ₄ ) ₂ SiF ₆
(PHT treatment)
(NH ₄ ) ₂ SiF ₆ → SiF ₄ ↑ + 2NH ₃ ↑ + 2HF ↑
In the PHT process, a small amount of N ₂ and H ₂ is also generated.

Further, in the substrate processing method according to the present embodiment, ozone gas is used in the organic layer removal process. Here, in the wafer W subjected to the COR process and the PHT process, the SiO ₂ layer 123 is removed from the deposit film 126 on the side surface of the trench, and the CF-based deposit layer 124 that is an organic layer is exposed. The ozone gas decomposes the exposed CF-based deposit layer 124. Specifically, the CF-based deposit layer 124 exposed to ozone gas is decomposed into CO, CO ₂ , F _{2 and the} like by a chemical reaction. As a result, the CF-based deposit layer 124 is removed from the deposit film 126 on the side surface of the trench.

  FIG. 7 is a flowchart of deposit film removal processing as the substrate processing method according to the present embodiment.

In FIG. 7, in the substrate processing system 10, first, a wafer W on which a deposit film 126 composed of a SiO ₂ layer 123, a CF-based deposit layer 124, and a SiO ₂ layer 125 is formed on the side surface of the trench is formed in the second process unit 34. The chamber 38 is accommodated and placed on the ESC 39 (step S71), and the pressure in the chamber 38 is adjusted to a predetermined pressure, and argon (Ar) as an ammonia gas, a hydrogen fluoride gas, and a dilution gas is contained in the chamber 38. ) Gas is supplied (ammonia gas supply step, hydrogen fluoride gas supply step) (step S72), the inside of the chamber 38 is set to the mixed gas atmosphere, and the SiO ₂ layer 123 is exposed to the mixed gas under a predetermined pressure. To do. Thereby, the product ((NH ₄ ) ₂ SiF ₆ ) having a complex structure is generated by chemically reacting the SiO ₂ layer, ammonia gas and hydrogen fluoride gas (COR treatment). At this time, the time during which the SiO ₂ layer 123 is exposed to the mixed gas is preferably 2 to 3 minutes, and the temperature of the ESC 39 is preferably set to any one of 10 to 100 ° C. Note that the protrusion amount of the pusher pin 56 from the ESC 39 is 0 in the COR processing, so that the wafer W remains separated from the heater 103.

  At this time, the partial pressure of the hydrogen fluoride gas in the chamber 38 is preferably 6.7 to 13.3 Pa (50 to 100 mTorr). Thereby, since the flow ratio of the mixed gas in the chamber 38 is stabilized, the production of the product can be promoted. Moreover, since the by-product generated in the chamber 38 is less likely to adhere as the temperature is higher, the inner wall temperature in the chamber 38 is preferably set to 50 ° C. by a heater embedded in the side wall.

Next, the wafer W on which the product has been generated is moved from the ESC 39 to the vicinity of the heater 103 of the shower head 40 by the pusher pin 56 (substrate moving step) (step S73). At this time, the distance between the moved wafer W and the heater 103 (indicated by “L” in FIG. 2A) is set to 0 mm <L <10 mm. As a result, the wafer W is heated by the heat radiated from the heater 103, and the complex structure of the product is decomposed by the heat in the wafer W, and the product is separated into silicon tetrafluoride (SiF ₄ ), ammonia, and hydrogen fluoride. Vaporize (PHT treatment).

  At this time, nitrogen gas is supplied from the nitrogen gas supply unit 108 to the first buffer chamber 45, and as a result, the shower head 40 supplies nitrogen gas into the chamber 38 (step S74). The nitrogen gas supplied into the chamber 38 generates a viscous flow in the chamber 38. Silicon tetrafluoride, ammonia, and hydrogen fluoride gas molecules generated by vaporizing the product are entrained in the viscous flow of nitrogen gas and discharged from the chamber 38 by the second process unit exhaust system 61.

In the second process unit 34, the product is a complex compound containing a coordination bond, and the complex compound has a weak binding force and promotes thermal decomposition even at a relatively low temperature. The predetermined temperature of W is preferably 80 to 200 ° C. Further, the time for performing the PHT process on the wafer W is preferably 30 to 120 seconds. In order to generate a viscous flow in the chamber 38, it is not preferable to increase the degree of vacuum in the chamber 38, and a gas flow with a constant flow rate is required. Therefore, the predetermined pressure of the chamber 38 in the PHT process is preferably 6.7 × 10 to 1.3 × 10 ² Pa (500 mTorr to 1 Torr), and the flow rate of nitrogen gas is preferably 500 to 3000 SCCM. . Thereby, since a viscous flow can be reliably generated in the chamber 38, gas molecules generated by thermal decomposition of the product can be reliably removed.

  Further, while the PHT process is performed on the wafer W, each inert gas ejection hole 116 of the ESC 39 ejects nitrogen gas so as to cover the surface of the ESC 39 (step S75). While the PHT process is performed on the wafer W, gas molecules such as silicon tetrafluoride, ammonia and hydrogen fluoride generated by the vaporization of the product reach the surface of the ESC 39, and are recombined on the surface to form a product. There is a possibility of adhesion. In this treatment, nitrogen gas is ejected so as to cover the surface of ESC 39, so that gas molecules of silicon tetrafluoride, ammonia and hydrogen fluoride do not reach the surface of ESC 39, and therefore silicon tetrafluoride and ammonia. Further, gas molecules of hydrogen fluoride are recombined and prevented from adhering to the surface of the ESC 39 as a product.

Next, the ozone gas is supplied from the ozone gas supply unit 111 to the first buffer chamber 45 while the wafer W that has been subjected to the PHT process is disposed in the vicinity of the heater 103 of the shower head 40 by the pusher pin 56, and as a result, the shower head 40 supplies ozone gas into the chamber 38 (step S76) (ozone gas supply step). At this time, the supplied ozone gas decomposes the CF-based deposit layer 124 exposed by removing the SiO ₂ layer 123 into gas molecules such as CO, CO _2, and F ₂ by a chemical reaction (organic substance layer removal process). These gas molecules are exhausted from the chamber 38 by the second process unit exhaust system 61. At this time, the time for supplying ozone gas into the chamber 38 is preferably about 10 seconds, and the temperature of the wafer W is preferably set to any one of 100 to 200 ° C. The flow rate of ozone gas supplied from the shower head 40 into the chamber 38 is preferably 1 to 5 SLM.

Next, the wafer W from which the CF-based deposit layer 124 is removed from the deposit film 126 on the side surface of the trench and the SiO ₂ layer 125 is exposed is moved and placed on the ESC 39 by the pusher pin 56 (step S77). Processing similar to that in step S72 is executed (step S78), and further processing similar to that in steps S73, S74, and S75 described above is executed (steps S79, S80, and S81). Thereby, the SiO ₂ layer 125 is removed, and then the present process is terminated.

According to the second process ship 12 as the substrate processing apparatus according to the present embodiment described above, the wafer on which the deposit film 126 composed of the SiO ₂ layer 123, the CF-based deposit layer 124, and the SiO ₂ layer 125 is formed. Ammonia gas and hydrogen fluoride gas are supplied into the chamber 38 containing W, and the wafer W is moved to the vicinity of the heater 103 of the shower head 40. When the SiO ₂ layer 123 is exposed to an atmosphere of ammonia gas and hydrogen fluoride gas, a product ((NH ₄ ) ₂ SiF ₆ ) is generated based on the SiO ₂ layer 123, ammonia and hydrogen fluoride. When the wafer W on which the product is generated is moved to the vicinity of the heater 103, the generated product is heated and vaporized. That is, since the SiO ₂ layer 123 can be removed in one chamber 38, the size of the second process ship 12 can be reduced, and thus the second process ship 12 in the substrate processing system 10 can be reduced. The degree of freedom of arrangement can be increased and the SiO ₂ layer 123 can be efficiently removed. Furthermore, since the wafer W remains separated from the heater 103 while the SiO ₂ layer 123 of the wafer W is exposed to the atmosphere of ammonia gas and hydrogen fluoride gas, the production of the product is emitted from the heater 103. The influence of heat can be prevented. That is, even if the second process unit 34 that performs the COR process on the wafer W has the heater 103 for performing the PHT process on the wafer W, the generation of the product is disturbed by the heat radiated from the heater 103. Therefore, the product can be stably generated on the wafer W.

  In the above-described second process ship 12, a plurality of pusher pins 56, which are rod-like members that can protrude from the ESC 39 toward the heater 103, support the back surface of the wafer W and move the wafer W to the vicinity of the heater 103. Therefore, the wafer W can be stably moved to the vicinity of the heater 103, and the generated product can be reliably heated.

  Further, in the second process ship 12 described above, each inert gas ejection hole 116 of the ESC 39 ejects nitrogen gas, which is an inert gas, so as to cover the surface of the ESC 39 during the PHT process. The gas molecules of silicon tetrafluoride, ammonia and hydrogen fluoride generated by the formation of the gas do not reach the surface of the ESC 39, so that the gas molecules of silicon tetrafluoride, ammonia and hydrogen fluoride are recombined to produce a product. As a result, adhesion to the surface of the ESC 39 can be prevented.

Further, since the pusher pin 56 sets the distance L between the wafer W and the heater 103 to 0 mm <L <10 mm, the temperature of the wafer W can be set to an optimum temperature for vaporizing the product, so that the product Vaporization can be promoted, and the temperature of the wafer W can be rapidly increased, so that the SiO ₂ layer 123 can be removed more efficiently.

In the second process ship 12 described above, ozone gas is supplied into the chamber 38. In the wafer W on which the deposit film 126 composed of the SiO ₂ layer 123, the CF-based deposit layer 124, and the SiO ₂ layer 125 is formed, the product generated from the SiO ₂ layer 123 is vaporized to form the CF-based deposit layer 124. When exposed, the exposed CF-based deposit layer 124 is exposed to the supplied ozone gas, and the ozone gas decomposes the CF-based deposit layer 124. Thus, the CF-based deposit layer 124 followed by the SiO ₂ layer 123 can be continuously removed, with it, it can be a SiO ₂ layer 123 and the CF-based deposit layer 124 efficiently removed.

In the second process unit 34 described above, the ammonia gas supply system 105 includes the ozone gas supply unit 111, and ozone gas is supplied into the chamber 38 during the organic substance layer removal process. An oxygen radical supply unit that supplies oxygen radicals may be provided instead of the supply unit 111. Oxygen radicals supplied into the chamber 38 also decompose the CF-based deposit layer 124 into gas molecules such as CO, CO _2, and F ₂ by a chemical reaction. Therefore, also in this case, a CF-based deposit layer 124 followed by the SiO ₂ layer 123 can be continuously removed, with it, it can be a SiO ₂ layer 123 and the CF-based deposit layer 124 efficiently removed. Further, since the ammonia gas supply system 105 supplies ozone gas or oxygen radicals, it is not necessary to provide an ozone gas supply system or oxygen radical supply system, and the size of the second process ship 12 can be further reduced.

  Further, in the second process unit 34 described above, the ammonia gas supply system 105 has the ozone gas supply unit 111 and supplies ozone gas into the chamber 38. However, the second process unit 34 is different from the ammonia gas supply system 105. An independent ozone gas supply system may be provided, and the ozone gas supply system may supply ozone gas into the chamber 38. Thereby, it is possible to prevent the residual gas such as ammonia gas from being mixed into the ozone gas, and the CF deposit layer 124 can be reliably decomposed. Further, the second process unit 34 may include an oxygen radical supply system independent of the ammonia gas supply system 105.

When the deposit film formed on the surface of the wafer W is composed of only the SiO ₂ layer, the ammonia gas supply system 105 may not include the ozone gas supply unit 111, the ozone gas supply pipe 112, and the ozone gas valve 113.

  In the second process ship 12 described above, the COR process, the PHT process, and the organic layer removal process are all performed on the wafer W in the second process unit 34. However, the COR process and the PHT process are performed in different process units. W may be applied. In this case, as shown in FIG. 10, the second process ship 180 is connected to the second process unit 181 that performs COR processing on the wafer W, and is connected to the second process unit 181 via a vacuum gate valve 182. And a third process unit 183 for performing PHT processing and organic layer removal processing on the wafer W, and a second load / lock unit 49 connected to the third process unit 183 via a vacuum gate valve 35. Have.

  Since the structure of the second process unit 181 is the same as that of a conventional chemical reaction processing apparatus, description thereof is omitted.

  FIG. 11 is a cross-sectional view of the third process unit in FIG.

  In FIG. 11, the third process unit 183 includes a housing-like processing chamber container (chamber) 184, a mounting table 186 disposed in the chamber 184 so as to face the ceiling 185 of the chamber 184, A PHT chamber lid (not shown) is provided on the ceiling portion 185 of the chamber 184 and serves as an openable / closable lid that shuts off the atmosphere inside and outside the chamber 184.

  A plate-like heater 186 (heating element) is disposed in the ceiling 185 of the chamber 184. The heater 186 includes a heating wire or the like, and radiates heat toward the chamber 184. The heater 186 is connected to the heater control unit 187, and the heater control unit 187 controls the amount of heat generated by the heater 186.

  The mounting table 186 mounts the wafer W loaded into the chamber 184. Further, the mounting table 186 has a plurality of pusher pins 188 (substrate moving devices) that can protrude from the upper surface thereof. The pusher pin 188 has the same configuration as the pusher pin 56 in the second process unit 34 described above. Accordingly, each pusher pin 188 can adjust the distance between the wafer W and the heater 186.

  The third process unit 183 performs PHT processing on the wafer W by heating the wafer W. Specifically, the wafer W mounted on the mounting table 186 is moved to the vicinity of the heater 186 by the pusher pin 188. Thereby, the wafer W is heated by the heat radiated from the heater 186, and the complex structure of the product is decomposed by the heat in the wafer W, and the product is separated into silicon tetrafluoride, ammonia and hydrogen fluoride and vaporized.

  The third process unit 183 includes a nitrogen gas supply system 190 and an ozone gas supply system 191.

The nitrogen gas supply system 190 includes a nitrogen gas supply unit 192 and a nitrogen gas supply pipe 193 connected to the nitrogen gas supply unit 192, and the nitrogen gas supply pipe 193 is mounted on the mounting table 186 at the ceiling of the chamber 184. It has a nitrogen gas supply hole 194 that opens to face the placed wafer W. The nitrogen gas supply unit 192 supplies nitrogen (N ₂ ) gas as a purge gas from the nitrogen gas supply hole 194 through the nitrogen gas supply pipe 193 into the chamber 184. Further, the nitrogen gas supply unit 192 adjusts the flow rate of the supplied nitrogen gas.

The ozone gas supply system 191 includes an ozone gas supply unit 195 and an ozone gas supply pipe 196 connected to the ozone gas supply unit 195, and the ozone gas supply pipe 196 is a wafer W mounted on the mounting table 186 at the ceiling of the chamber 184. The ozone gas supply hole 197 is opened so as to face the surface. The ozone gas supply unit 195 supplies ozone (O ₃ ) gas into the chamber 184 from the ozone gas supply hole 197 via the ozone gas supply pipe 196. The ozone gas supply unit 195 adjusts the flow rate of the ozone gas to be supplied.

The third process unit 183 performs organic layer removal processing on the wafer W that has been subjected to PHT processing, following the PHT processing. Specifically, ozone gas is supplied into the chamber 184 from the ozone gas supply hole 197 while the wafer W that has been subjected to the PHT process is placed near the heater 186 by the pusher pin 188. At this time, the supplied ozone gas decomposes the CF-based deposit layer exposed by removing the product into gas molecules such as CO, CO ₂ and F ₂ by chemical reaction.

  According to the third process unit 183 described above, the wafer W is pushed into the pusher pin 188 in the chamber 184 in which the wafer W having a product formed from the oxide layer, ammonia and hydrogen fluoride formed thereon is accommodated. Is moved to the vicinity of the heater 186. When the wafer W on which the product is generated is moved to the vicinity of the heater 186, the generated product is heated and vaporized. At this time, the wafer W is simply adjusted by adjusting the distance between the wafer W and the heater 186. The amount of heat received by the wafer W can be easily adjusted, and the temperature of the wafer W can be easily adjusted.

  The above-described third process unit 183 has the ozone gas supply system 191 that supplies ozone gas into the chamber 184, but may have an oxygen radical supply system that supplies oxygen radicals into the chamber 184. .

  The substrate processing apparatus according to the present embodiment described above is not limited to a parallel type substrate processing apparatus having two process ships arranged in parallel to each other as shown in FIG. 1, but as shown in FIGS. A substrate processing apparatus in which a plurality of process units serving as vacuum processing chambers for performing predetermined processing on the wafer W are arranged radially is also applicable.

  FIG. 8 is a plan view showing a schematic configuration of a first modification of the substrate processing system including the substrate processing apparatus according to this embodiment described above. In FIG. 8, the same components as those in the substrate processing system 10 of FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.

  In FIG. 8, the substrate processing system 137 includes a hexagonal transfer unit 138 in plan view, four process units 139 to 142 arranged radially around the transfer unit 138, a loader unit 13, a transfer unit 138, and Two load / lock units 143 and 144 that are arranged between the loader unit 13 and connect the transfer unit 138 and the loader unit 13 are provided.

  The transfer unit 138 and the process units 139 to 142 are maintained at a vacuum in the internal pressure, and the transfer unit 138 and the process units 139 to 142 are connected to each other via vacuum gate valves 145 to 148, respectively.

  In the substrate processing system 137, the internal pressure of the loader unit 13 is maintained at atmospheric pressure, while the internal pressure of the transfer unit 138 is maintained at vacuum. Therefore, each load / lock unit 143, 144 is provided with vacuum gate valves 149, 150 at the connection with the transfer unit 138, and with atmospheric door valves 151, 152 at the connection with the loader unit 13, respectively. It is configured as a vacuum preparatory transfer chamber that can adjust the internal pressure. Each of the load / lock units 143 and 144 has wafer mounting tables 153 and 154 for temporarily mounting the wafer W delivered between the loader unit 13 and the transfer unit 138.

  The transfer unit 138 includes a frog-leg type transfer arm 155 disposed inside the transfer unit 138 so as to be able to bend and stretch, and the transfer arm 155 includes the process units 139 to 142 and the load / lock units 143 and 144. The wafer W is transferred between them.

  Each process unit 139 to 142 has a mounting table 156 to 159 on which a wafer W to be processed is mounted. Here, the process units 139, 140 and 141 have the same configuration as the first process unit 25 in the substrate processing system 10, and the process unit 142 has the same configuration as the second process unit 34. Accordingly, the process units 139, 140, and 141 can perform etching processing on the wafer W, and the process unit 142 can perform COR processing, PHT processing, and organic layer removal processing on the wafer W.

In the substrate processing system 137, the wafer W having the SiO ₂ layer, the CF-based deposit layer 124 and the SiO ₂ layer formed on the side surface of the trench is loaded into the process unit 142 and is subjected to COR processing, PHT processing, and organic matter. By performing the layer removal process continuously, the substrate processing method according to the present embodiment described above is efficiently executed.

  Further, when the COR processing and the PHT processing are executed by separate apparatuses as in the conventional substrate processing apparatus, two process units of the four process units 139 to 142 are respectively set in the substrate processing system 137 described above. Although it was necessary to use a chemical reaction processing apparatus and a heat treatment apparatus, in the second process ship 12 described above, the COR process and the PHT process can be executed by one process unit, so that the four process units 139 to 142 One of the process units may have the same configuration as that of the second process unit 34, and the other three process units can perform ion and radical etching processing, for example, RIE processing. The processing can be improved as a whole.

  The operation of each component in the substrate processing system 137 is controlled by a system controller having the same configuration as the system controller in the substrate processing system 10.

  FIG. 9 is a plan view showing a schematic configuration of a second modification of the substrate processing system including the substrate processing apparatus according to this embodiment described above. In FIG. 9, the same components as those in the substrate processing system 10 in FIG. 1 and the substrate processing system 137 in FIG. 8 are denoted by the same reference numerals, and description thereof is omitted.

  In FIG. 9, the substrate processing system 160 has two process units 161 and 162 added to the substrate processing system 137 of FIG. 8, and correspondingly, the shape of the transfer unit 163 is also the transfer in the substrate processing system 137. Different from the shape of the unit 138. The two added process units 161 and 162 are connected to the transfer unit 163 via vacuum gate valves 164 and 165, respectively, and have wafer W mounting tables 166 and 167, respectively. The process unit 161 has a configuration similar to that of the first process unit 25, and the process unit 162 has a configuration similar to that of the second process unit 34.

  The transfer unit 163 includes a transfer arm unit 168 including two SCARA arm type transfer arms. The transfer arm unit 168 moves along a guide rail 169 disposed in the transfer unit 163, and moves the wafer W between the process units 139 to 142, 161, 162 and the load / lock units 143, 144. Transport.

In the substrate processing system 160, similar to the substrate processing system 137, the SiO ₂ layer on the sides of the trench, CF-based wafer W to deposit film 126 is formed consisting deposit layer 124 and the SiO ₂ layer process unit 142 or process unit The substrate processing method according to the present embodiment described above is efficiently executed by carrying in the COR processing, the PHT processing, and the organic material layer removal processing in succession. Further, in the substrate processing system 160, only two process units out of the six process units 139 to 142, 161, and 162 may be configured in the same manner as the second process unit 34, and the other four process units perform ionization. In addition, since the etching process using radicals, for example, the RIE process can be performed, the processing of the wafer W can be improved as a whole.

  The operation of each component in the substrate processing system 160 is also controlled by a system controller having the same configuration as the system controller in the substrate processing system 10.

  An object of the present invention is to supply a storage medium storing software program codes for realizing the functions of the above-described embodiment to the EC 89, and the computer (or CPU, MPU, etc.) of the EC 89 is stored in the storage medium. It is also achieved by reading and executing the program code.

  In this case, the program code itself read from the storage medium realizes the functions of the above-described embodiment, and the program code and the storage medium storing the program code constitute the present invention. .

  Examples of the storage medium for supplying the program code include a floppy (registered trademark) disk, a hard disk, a magneto-optical disk, a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, a DVD-RAM, and a DVD. An optical disc such as RW or DVD + RW, a magnetic tape, a nonvolatile memory card, a ROM, or the like can be used. Alternatively, the program code may be downloaded via a network.

  Further, by executing the program code read by the computer, not only the functions of the present embodiment are realized, but also an OS (operating system) running on the computer based on the instruction of the program code, etc. Includes a case where part or all of the actual processing is performed and the above-described functions of the present embodiment are realized by the processing.

  Furthermore, after the program code read from the storage medium is written to a memory provided in a function expansion board inserted into the computer or a function expansion unit connected to the computer, the expanded function is based on the instruction of the program code. This includes a case where the CPU or the like provided on the expansion board or the expansion unit performs part or all of the actual processing, and the above-described functions of the present embodiment are realized by the processing.

  The form of the program code may include an object code, a program code executed by an interpreter, script data supplied to the OS, and the like.

It is a top view which shows schematic structure of a substrate processing system provided with the substrate processing apparatus which concerns on embodiment of this invention. FIG. 2 is a cross-sectional view of a second process unit in FIG. 1, (A) is a cross-sectional view taken along line II-II in FIG. 1, and (B) is an enlarged view of portion A in FIG. It is a perspective view which shows schematic structure of the 2nd process ship in FIG. It is a figure which shows schematic structure of the dry air supply system for a unit drive of the 2nd load lock unit in FIG. It is a figure which shows schematic structure of the system controller in the substrate processing apparatus of FIG. SiO ₂ layer, a cross-sectional view of a wafer deposited film is formed consisting of CF-based deposit layer and the SiO ₂ layer. It is a flow chart of deposit film removal processing as a substrate processing method concerning this embodiment. It is a top view which shows schematic structure of the 1st modification of a substrate processing system provided with the substrate processing apparatus which concerns on this Embodiment. It is a top view which shows schematic structure of the 2nd modification of a substrate processing system provided with the substrate processing apparatus which concerns on this Embodiment. It is a top view which shows schematic structure of the substrate processing system provided with the modification of a 2nd process ship. It is sectional drawing of the 3rd process unit in FIG.

Explanation of symbols

W wafer 10, 137, 160 substrate processing system 11 first process ship 12, 180 second process ship 13 loader unit 17 first IMS
18 Second IMS
25 First process unit 34,181 Second process unit 37 Second transfer arm 38, 70 Chamber 39 ESC
40 Shower head 41 TMP
42 APC valve 45 First buffer chamber 46 Second buffer chamber 47, 48 Gas vent hole 49 Second load lock chamber 56, 188 Pusher pin 57 Ammonia gas supply pipe 58 Hydrogen fluoride gas supply pipe 59, 72 Pressure Gauge 61 Second process unit exhaust system
71 Nitrogen gas supply pipe 73 Second load / lock unit exhaust system 74 Atmospheric communication pipe 89 EC
90, 91, 92 MC
93 switching hub 95 GHOST network 97, 98, 99 I / O module 100 I / O unit 103, 186 heater 105 ammonia gas supply system 107 ammonia gas supply unit 108 nitrogen gas supply unit 111 ozone gas supply unit 115 hydrogen fluoride gas supply unit 116 Inert gas ejection hole 122 Trench 123, 125 SiO ₂ layer 124 CF-based deposit layer 126 Deposit film 127 Hydrogen fluoride gas supply system 138, 163 Transfer unit 139, 140, 141, 142, 161, 162 Process unit 170 LAN
171 PC
183 Third process unit 190 Nitrogen gas supply system 191 Ozone gas supply system 192 Nitrogen gas supply part 194 Nitrogen gas supply hole 195 Ozone gas supply part 196 Ozone gas supply pipe 197 Ozone gas supply hole

Claims (18)

A substrate processing apparatus for performing processing on a substrate having an oxide layer formed on a surface thereof, comprising a storage chamber for storing the substrate,
An ammonia gas supply system for supplying ammonia gas into the housing chamber;
A hydrogen fluoride gas supply system for supplying hydrogen fluoride gas into the housing chamber;
A heating element that radiates heat toward the containing chamber;
A substrate processing apparatus comprising: a substrate moving device that moves a substrate accommodated in the accommodation chamber to the vicinity of the heating element. A mounting table disposed on the storage chamber for mounting the substrate;
The heating element faces the mounting table,
The substrate processing apparatus according to claim 1, wherein the substrate moving device includes a plurality of rod-like members that can protrude from the mounting table toward the heating element.   The substrate processing apparatus according to claim 2, wherein the mounting table includes an inert gas ejection unit that ejects an inert gas.   The substrate processing apparatus according to claim 1, wherein the substrate moving device adjusts a distance between the substrate and the heating element.   5. The substrate processing apparatus according to claim 4, wherein a distance L between the substrate and the heating element is 0 mm <L <10 mm.   The substrate processing apparatus according to claim 1, wherein the ammonia gas supply system supplies ozone gas or oxygen radicals into the accommodation chamber.   The substrate processing apparatus according to claim 1, further comprising an ozone gas supply system that supplies ozone gas into the housing chamber.   6. The substrate processing apparatus according to claim 1, further comprising an oxygen radical supply system that supplies oxygen radicals into the housing chamber. A substrate processing method for processing a substrate in a substrate processing apparatus including a storage chamber that stores a substrate having an oxide layer formed on the surface, and a heating element that radiates heat toward the storage chamber,
An ammonia gas supply step for supplying ammonia gas into the housing chamber;
A hydrogen fluoride gas supply step for supplying hydrogen fluoride gas into the housing chamber;
A substrate moving step of moving the substrate housed in the housing chamber to the vicinity of the heating element.   The substrate processing method according to claim 9, further comprising an ozone gas supply step of supplying ozone gas into the housing chamber.   The substrate processing method according to claim 9, further comprising an oxygen radical supply step of supplying oxygen radicals into the accommodation chamber. A computer executes a substrate processing method for processing a substrate in a substrate processing apparatus including a storage chamber that stores a substrate having an oxide layer formed on the surface, and a heating element that radiates heat toward the storage chamber. A computer-readable storage medium for storing a program, wherein the program is
An ammonia gas supply module for supplying ammonia gas into the housing chamber;
A hydrogen fluoride gas supply module for supplying hydrogen fluoride gas into the housing chamber;
A storage medium comprising: a substrate moving module configured to move a substrate accommodated in the accommodation chamber to the vicinity of the heating element. In a substrate processing apparatus for processing a substrate on which a product generated from an oxide layer, ammonia and hydrogen fluoride is formed, the substrate processing apparatus including a storage chamber for storing the substrate,
A heating element that radiates heat toward the containing chamber;
A substrate processing apparatus comprising: a substrate moving device that moves a substrate accommodated in the accommodation chamber to the vicinity of the heating element. A mounting table disposed on the storage chamber for mounting the substrate;
The heating element faces the mounting table,
The substrate processing apparatus according to claim 13, wherein the substrate moving device includes a plurality of rod-like members that can protrude from the mounting table toward the heating element.   15. The substrate processing apparatus according to claim 13, further comprising an ozone gas supply system that supplies ozone gas into the housing chamber.   15. The substrate processing apparatus according to claim 13, further comprising an oxygen radical supply system that supplies oxygen radicals into the accommodation chamber. In a substrate processing apparatus, comprising: a storage chamber that stores a substrate on which a product generated from an oxide layer, ammonia, and hydrogen fluoride is formed; and a heating element that radiates heat toward the storage chamber. A substrate processing method for performing processing on
A substrate processing method comprising a substrate moving step of moving a substrate accommodated in the accommodation chamber to the vicinity of the heating element. In a substrate processing apparatus, comprising: a storage chamber that stores a substrate on which a product generated from an oxide layer, ammonia, and hydrogen fluoride is formed; and a heating element that radiates heat toward the storage chamber. A computer-readable storage medium storing a program for causing a computer to execute a substrate processing method for performing processing on the computer,
A storage medium comprising a substrate moving module for moving a substrate accommodated in the accommodation chamber to the vicinity of the heating element.

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